KR20200050375A - 기판 적재대, 기판 처리 장치 및 기판 처리 방법 - Google Patents
기판 적재대, 기판 처리 장치 및 기판 처리 방법 Download PDFInfo
- Publication number
- KR20200050375A KR20200050375A KR1020190130350A KR20190130350A KR20200050375A KR 20200050375 A KR20200050375 A KR 20200050375A KR 1020190130350 A KR1020190130350 A KR 1020190130350A KR 20190130350 A KR20190130350 A KR 20190130350A KR 20200050375 A KR20200050375 A KR 20200050375A
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- South Korea
- Prior art keywords
- temperature control
- substrate
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- temperature
- area
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- 238000012545 processing Methods 0.000 claims abstract description 71
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- 229910052782 aluminium Inorganic materials 0.000 claims description 12
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- 238000003672 processing method Methods 0.000 claims description 10
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- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
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- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
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- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
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- 238000007743 anodising Methods 0.000 description 1
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- 229910052750 molybdenum Inorganic materials 0.000 description 1
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- 229920003002 synthetic resin Polymers 0.000 description 1
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- 239000010936 titanium Substances 0.000 description 1
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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- 238000012795 verification Methods 0.000 description 1
- 229910000859 α-Fe Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
- C23C16/45536—Use of plasma, radiation or electromagnetic fields
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
- H01J37/32724—Temperature
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
- Manufacturing Of Printed Wiring (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020210182790A KR102519110B1 (ko) | 2018-11-01 | 2021-12-20 | 기판 적재대, 기판 처리 장치 및 기판 처리 방법 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018206647A JP7199200B2 (ja) | 2018-11-01 | 2018-11-01 | 基板載置台、基板処理装置及び基板処理方法 |
JPJP-P-2018-206647 | 2018-11-01 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020210182790A Division KR102519110B1 (ko) | 2018-11-01 | 2021-12-20 | 기판 적재대, 기판 처리 장치 및 기판 처리 방법 |
Publications (1)
Publication Number | Publication Date |
---|---|
KR20200050375A true KR20200050375A (ko) | 2020-05-11 |
Family
ID=70516953
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020190130350A KR20200050375A (ko) | 2018-11-01 | 2019-10-21 | 기판 적재대, 기판 처리 장치 및 기판 처리 방법 |
KR1020210182790A KR102519110B1 (ko) | 2018-11-01 | 2021-12-20 | 기판 적재대, 기판 처리 장치 및 기판 처리 방법 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020210182790A KR102519110B1 (ko) | 2018-11-01 | 2021-12-20 | 기판 적재대, 기판 처리 장치 및 기판 처리 방법 |
Country Status (4)
Country | Link |
---|---|
JP (1) | JP7199200B2 (zh) |
KR (2) | KR20200050375A (zh) |
CN (1) | CN111146134B (zh) |
TW (1) | TWI824038B (zh) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102593142B1 (ko) | 2020-05-19 | 2023-10-25 | 세메스 주식회사 | 기판 처리 장치 및 그의 페라이트 코어 온도 제어 방법 |
CN114256091A (zh) * | 2020-09-24 | 2022-03-29 | 株式会社斯库林集团 | 基板处理装置及隔热构件 |
CN112509901B (zh) * | 2020-11-19 | 2022-03-22 | 北京北方华创微电子装备有限公司 | 工艺腔室及半导体工艺设备 |
CN114203933A (zh) * | 2021-12-11 | 2022-03-18 | 深圳市华星光电半导体显示技术有限公司 | 显示面板的封装基台及显示面板的制作方法 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017147278A (ja) | 2016-02-15 | 2017-08-24 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3066144U (ja) | 1999-07-28 | 2000-02-18 | 京浜測器株式会社 | ヒ―タ―ユニット |
JP3742349B2 (ja) * | 2002-02-15 | 2006-02-01 | 株式会社日立製作所 | プラズマ処理装置 |
US20040187787A1 (en) * | 2003-03-31 | 2004-09-30 | Dawson Keith E. | Substrate support having temperature controlled substrate support surface |
CN1310285C (zh) * | 2003-05-12 | 2007-04-11 | 东京毅力科创株式会社 | 处理装置 |
JP4421874B2 (ja) * | 2003-10-31 | 2010-02-24 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
JP2005333114A (ja) | 2004-04-20 | 2005-12-02 | Hitachi High-Technologies Corp | 電子ビーム描画装置、および電子ビーム描画方法 |
JP2006261541A (ja) * | 2005-03-18 | 2006-09-28 | Tokyo Electron Ltd | 基板載置台、基板処理装置および基板処理方法 |
JP2006245621A (ja) * | 2006-06-19 | 2006-09-14 | Hitachi High-Technologies Corp | プラズマ処理方法 |
US8546732B2 (en) * | 2010-11-10 | 2013-10-01 | Lam Research Corporation | Heating plate with planar heater zones for semiconductor processing |
CN103843129B (zh) * | 2011-09-30 | 2017-03-01 | 应用材料公司 | 具有温度控制的静电夹具 |
WO2013187192A1 (ja) * | 2012-06-13 | 2013-12-19 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
JP6184760B2 (ja) * | 2013-06-11 | 2017-08-23 | 東京エレクトロン株式会社 | 基板処理方法及び基板処理装置 |
JP6584286B2 (ja) * | 2015-10-26 | 2019-10-02 | 日本発條株式会社 | ヒータユニット |
-
2018
- 2018-11-01 JP JP2018206647A patent/JP7199200B2/ja active Active
-
2019
- 2019-10-18 TW TW108137582A patent/TWI824038B/zh active
- 2019-10-21 KR KR1020190130350A patent/KR20200050375A/ko not_active IP Right Cessation
- 2019-10-30 CN CN201911060409.1A patent/CN111146134B/zh active Active
-
2021
- 2021-12-20 KR KR1020210182790A patent/KR102519110B1/ko active IP Right Grant
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2017147278A (ja) | 2016-02-15 | 2017-08-24 | 東京エレクトロン株式会社 | 基板載置台および基板処理装置 |
Also Published As
Publication number | Publication date |
---|---|
JP7199200B2 (ja) | 2023-01-05 |
TWI824038B (zh) | 2023-12-01 |
KR20210158366A (ko) | 2021-12-30 |
KR102519110B1 (ko) | 2023-04-10 |
CN111146134B (zh) | 2024-04-16 |
CN111146134A (zh) | 2020-05-12 |
TW202032699A (zh) | 2020-09-01 |
JP2020072213A (ja) | 2020-05-07 |
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X091 | Application refused [patent] | ||
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X601 | Decision of rejection after re-examination |