JP7199200B2 - 基板載置台、基板処理装置及び基板処理方法 - Google Patents

基板載置台、基板処理装置及び基板処理方法 Download PDF

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JP7199200B2
JP7199200B2 JP2018206647A JP2018206647A JP7199200B2 JP 7199200 B2 JP7199200 B2 JP 7199200B2 JP 2018206647 A JP2018206647 A JP 2018206647A JP 2018206647 A JP2018206647 A JP 2018206647A JP 7199200 B2 JP7199200 B2 JP 7199200B2
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temperature control
plate
substrate
temperature
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Japanese (ja)
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JP2020072213A (ja
Inventor
芳彦 佐々木
弥 町山
雅人 南
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2018206647A priority Critical patent/JP7199200B2/ja
Priority to TW108137582A priority patent/TWI824038B/zh
Priority to KR1020190130350A priority patent/KR20200050375A/ko
Priority to CN201911060409.1A priority patent/CN111146134B/zh
Publication of JP2020072213A publication Critical patent/JP2020072213A/ja
Priority to KR1020210182790A priority patent/KR102519110B1/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
    • B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
    • B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45536—Use of plasma, radiation or electromagnetic fields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H01J37/32724—Temperature
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP2018206647A 2018-11-01 2018-11-01 基板載置台、基板処理装置及び基板処理方法 Active JP7199200B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2018206647A JP7199200B2 (ja) 2018-11-01 2018-11-01 基板載置台、基板処理装置及び基板処理方法
TW108137582A TWI824038B (zh) 2018-11-01 2019-10-18 基板載置台、基板處理裝置及基板處理方法
KR1020190130350A KR20200050375A (ko) 2018-11-01 2019-10-21 기판 적재대, 기판 처리 장치 및 기판 처리 방법
CN201911060409.1A CN111146134B (zh) 2018-11-01 2019-10-30 基板载置台、基板处理装置以及基板处理方法
KR1020210182790A KR102519110B1 (ko) 2018-11-01 2021-12-20 기판 적재대, 기판 처리 장치 및 기판 처리 방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018206647A JP7199200B2 (ja) 2018-11-01 2018-11-01 基板載置台、基板処理装置及び基板処理方法

Publications (2)

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JP2020072213A JP2020072213A (ja) 2020-05-07
JP7199200B2 true JP7199200B2 (ja) 2023-01-05

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JP (1) JP7199200B2 (zh)
KR (2) KR20200050375A (zh)
CN (1) CN111146134B (zh)
TW (1) TWI824038B (zh)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102593142B1 (ko) 2020-05-19 2023-10-25 세메스 주식회사 기판 처리 장치 및 그의 페라이트 코어 온도 제어 방법
CN114256091A (zh) * 2020-09-24 2022-03-29 株式会社斯库林集团 基板处理装置及隔热构件
CN112509901B (zh) * 2020-11-19 2022-03-22 北京北方华创微电子装备有限公司 工艺腔室及半导体工艺设备
CN114203933A (zh) * 2021-12-11 2022-03-18 深圳市华星光电半导体显示技术有限公司 显示面板的封装基台及显示面板的制作方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3066144U (ja) 1999-07-28 2000-02-18 京浜測器株式会社 ヒ―タ―ユニット
JP2003243371A (ja) 2002-02-15 2003-08-29 Hitachi Ltd プラズマ処理装置
JP2005333114A (ja) 2004-04-20 2005-12-02 Hitachi High-Technologies Corp 電子ビーム描画装置、および電子ビーム描画方法
JP2006245621A (ja) 2006-06-19 2006-09-14 Hitachi High-Technologies Corp プラズマ処理方法
JP2017147278A (ja) 2016-02-15 2017-08-24 東京エレクトロン株式会社 基板載置台および基板処理装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040187787A1 (en) * 2003-03-31 2004-09-30 Dawson Keith E. Substrate support having temperature controlled substrate support surface
CN1310285C (zh) * 2003-05-12 2007-04-11 东京毅力科创株式会社 处理装置
JP4421874B2 (ja) * 2003-10-31 2010-02-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
US8546732B2 (en) * 2010-11-10 2013-10-01 Lam Research Corporation Heating plate with planar heater zones for semiconductor processing
CN103843129B (zh) * 2011-09-30 2017-03-01 应用材料公司 具有温度控制的静电夹具
WO2013187192A1 (ja) * 2012-06-13 2013-12-19 東京エレクトロン株式会社 基板載置台および基板処理装置
JP6184760B2 (ja) * 2013-06-11 2017-08-23 東京エレクトロン株式会社 基板処理方法及び基板処理装置
JP6584286B2 (ja) * 2015-10-26 2019-10-02 日本発條株式会社 ヒータユニット

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3066144U (ja) 1999-07-28 2000-02-18 京浜測器株式会社 ヒ―タ―ユニット
JP2003243371A (ja) 2002-02-15 2003-08-29 Hitachi Ltd プラズマ処理装置
JP2005333114A (ja) 2004-04-20 2005-12-02 Hitachi High-Technologies Corp 電子ビーム描画装置、および電子ビーム描画方法
JP2006245621A (ja) 2006-06-19 2006-09-14 Hitachi High-Technologies Corp プラズマ処理方法
JP2017147278A (ja) 2016-02-15 2017-08-24 東京エレクトロン株式会社 基板載置台および基板処理装置

Also Published As

Publication number Publication date
TWI824038B (zh) 2023-12-01
KR20210158366A (ko) 2021-12-30
KR102519110B1 (ko) 2023-04-10
CN111146134B (zh) 2024-04-16
CN111146134A (zh) 2020-05-12
TW202032699A (zh) 2020-09-01
JP2020072213A (ja) 2020-05-07
KR20200050375A (ko) 2020-05-11

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