KR20190034213A - 화합물, 수지, 조성물 및 패턴 형성방법 - Google Patents

화합물, 수지, 조성물 및 패턴 형성방법 Download PDF

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KR20190034213A
KR20190034213A KR1020197002640A KR20197002640A KR20190034213A KR 20190034213 A KR20190034213 A KR 20190034213A KR 1020197002640 A KR1020197002640 A KR 1020197002640A KR 20197002640 A KR20197002640 A KR 20197002640A KR 20190034213 A KR20190034213 A KR 20190034213A
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South Korea
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group
carbon atoms
formula
compound
substituent
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KR1020197002640A
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English (en)
Korean (ko)
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마사토시 에치고
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미쯔비시 가스 케미칼 컴파니, 인코포레이티드
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Publication of KR20190034213A publication Critical patent/KR20190034213A/ko

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    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
    • C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D311/78—Ring systems having three or more relevant rings
    • C07D311/80—Dibenzopyrans; Hydrogenated dibenzopyrans
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
    • C07C43/215—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring having unsaturation outside the six-membered aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C43/00—Ethers; Compounds having groups, groups or groups
    • C07C43/02—Ethers
    • C07C43/20—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring
    • C07C43/23—Ethers having an ether-oxygen atom bound to a carbon atom of a six-membered aromatic ring containing hydroxy or O-metal groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/52—Esters of acyclic unsaturated carboxylic acids having the esterified carboxyl group bound to an acyclic carbon atom
    • C07C69/533—Monocarboxylic acid esters having only one carbon-to-carbon double bond
    • C07C69/54—Acrylic acid esters; Methacrylic acid esters
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D311/00—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings
    • C07D311/02—Heterocyclic compounds containing six-membered rings having one oxygen atom as the only hetero atom, condensed with other rings ortho- or peri-condensed with carbocyclic rings or ring systems
    • C07D311/78—Ring systems having three or more relevant rings
    • C07D311/80—Dibenzopyrans; Hydrogenated dibenzopyrans
    • C07D311/82—Xanthenes
    • C07D311/90—Xanthenes with hydrocarbon radicals, substituted by amino radicals, directly attached in position 9
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F216/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical
    • C08F216/02—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by an alcohol, ether, aldehydo, ketonic, acetal or ketal radical by an alcohol radical
    • C08F216/10—Carbocyclic compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08F—MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVING CARBON-TO-CARBON UNSATURATED BONDS
    • C08F224/00—Copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a heterocyclic ring containing oxygen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/028—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with photosensitivity-increasing substances, e.g. photoinitiators
    • G03F7/031—Organic compounds not covered by group G03F7/029
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Pyrane Compounds (AREA)
KR1020197002640A 2016-07-21 2017-07-21 화합물, 수지, 조성물 및 패턴 형성방법 KR20190034213A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2016143659 2016-07-21
JPJP-P-2016-143659 2016-07-21
PCT/JP2017/026412 WO2018016614A1 (fr) 2016-07-21 2017-07-21 Composé, résine, composition et procédé de formation de motif

Publications (1)

Publication Number Publication Date
KR20190034213A true KR20190034213A (ko) 2019-04-01

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020197002640A KR20190034213A (ko) 2016-07-21 2017-07-21 화합물, 수지, 조성물 및 패턴 형성방법

Country Status (5)

Country Link
JP (1) JP7194355B2 (fr)
KR (1) KR20190034213A (fr)
CN (1) CN109415286A (fr)
TW (1) TW201817722A (fr)
WO (1) WO2018016614A1 (fr)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109415286A (zh) * 2016-07-21 2019-03-01 三菱瓦斯化学株式会社 化合物、树脂、组合物和图案形成方法
JP7194356B2 (ja) * 2016-07-21 2022-12-22 三菱瓦斯化学株式会社 化合物、樹脂及び組成物、並びにレジストパターン形成方法及び回路パターン形成方法
JP6963187B2 (ja) * 2016-09-16 2021-11-05 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターニングされた基板の製造方法
JP7128582B2 (ja) * 2017-10-25 2022-08-31 田岡化学工業株式会社 ナフタレン骨格を有するビスアリールアルコール類及びその製造方法
JP7139622B2 (ja) * 2018-02-28 2022-09-21 三菱瓦斯化学株式会社 化合物、樹脂、組成物及びパターン形成方法
US11747728B2 (en) 2018-05-28 2023-09-05 Mitsubishi Gas Chemical Company, Inc. Compound, resin, composition, resist pattern formation method, circuit pattern formation method and method for purifying resin
KR20210023845A (ko) 2018-06-26 2021-03-04 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법
KR20210036866A (ko) * 2018-07-31 2021-04-05 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 광학부품형성용 조성물 및 광학부품, 그리고, 화합물 및 수지
CN112513737A (zh) * 2018-07-31 2021-03-16 三菱瓦斯化学株式会社 下层膜形成组合物
KR20210045357A (ko) 2018-08-20 2021-04-26 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 리소그래피용 막형성재료, 리소그래피용 막형성용 조성물, 리소그래피용 하층막 및 패턴 형성방법
US11971659B2 (en) 2018-10-08 2024-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Photoresist composition and method of forming photoresist pattern
JP2023021515A (ja) * 2021-08-02 2023-02-14 信越化学工業株式会社 熱硬化性樹脂組成物

Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334869A (ja) 2001-02-07 2002-11-22 Tokyo Electron Ltd シリコン窒化膜の形成方法、形成装置及びこの形成装置の洗浄前処理方法
JP2004177668A (ja) 2002-11-27 2004-06-24 Tokyo Ohka Kogyo Co Ltd 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法
WO2004066377A1 (fr) 2003-01-24 2004-08-05 Tokyo Electron Limited Procede de depot chimique en phase vapeur pour former un film de nitrure de silicium sur un substrat
JP2004271838A (ja) 2003-03-07 2004-09-30 Shin Etsu Chem Co Ltd レジスト下層膜材料ならびにパターン形成方法
JP2005250434A (ja) 2004-02-04 2005-09-15 Shin Etsu Chem Co Ltd レジスト下層膜材料ならびにパターン形成方法
JP2005326838A (ja) 2004-04-15 2005-11-24 Mitsubishi Gas Chem Co Inc レジスト組成物
JP2007226204A (ja) 2006-01-25 2007-09-06 Shin Etsu Chem Co Ltd 反射防止膜材料、基板、及びパターン形成方法
JP2007226170A (ja) 2006-01-27 2007-09-06 Shin Etsu Chem Co Ltd 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP2008145539A (ja) 2006-12-06 2008-06-26 Mitsubishi Gas Chem Co Inc 感放射線性レジスト組成物
JP2009173623A (ja) 2007-04-23 2009-08-06 Mitsubishi Gas Chem Co Inc 感放射線性組成物
JP2010138393A (ja) 2008-11-13 2010-06-24 Nippon Kayaku Co Ltd 光学レンズシート用エネルギー線硬化型樹脂組成物及びその硬化物
WO2013024778A1 (fr) 2011-08-12 2013-02-21 三菱瓦斯化学株式会社 Composition de réserve, procédé de formation de motif de réserve, composé polyphénol mis en œuvre dans ce procédé, et composé alcool obtenu par dérivation de ce composé polyphénol
WO2013024779A1 (fr) 2011-08-12 2013-02-21 三菱瓦斯化学株式会社 Film de sous-couche pour lithographie ainsi que matériau pour formation de celui-ci, et procédé de formation de motif
WO2014123005A1 (fr) 2013-02-08 2014-08-14 三菱瓦斯化学株式会社 Nouveau composé allyle, et procédé de fabrication de celui-ci
JP2015174877A (ja) 2014-03-13 2015-10-05 日産化学工業株式会社 特定の硬化促進触媒を含む樹脂組成物

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3223104A1 (de) * 1982-06-21 1983-12-22 Hoechst Ag, 6230 Frankfurt Photopolymerisierbares gemisch und damit hergestelltes photopolymerisierbares kopiermaterial
JPH04253716A (ja) * 1991-02-05 1992-09-09 Dainippon Ink & Chem Inc 新規なエネルギー線硬化型樹脂組成物
JP4365494B2 (ja) * 1999-10-27 2009-11-18 日本ペイント株式会社 体積ホログラム記録用感光組成物およびこれから得られるホログラム
US7087195B2 (en) * 2000-12-13 2006-08-08 Tokuyama Corporation Photochromic curable composition and cured articles thereof
JP2003012660A (ja) * 2001-06-28 2003-01-15 Sumitomo Bakelite Co Ltd エポキシアクリレート化合物およびその製造方法
JP4238729B2 (ja) * 2001-11-30 2009-03-18 株式会社ニコン 密着複層型回折光学素子
JP4630806B2 (ja) * 2005-12-09 2011-02-09 キヤノン株式会社 電子写真感光体、プロセスカートリッジ及び電子写真装置
JP5443177B2 (ja) * 2007-03-09 2014-03-19 スリーエム イノベイティブ プロパティズ カンパニー 微細構造化光学フィルムに好適なトリフェニルモノマー
TW200906873A (en) * 2007-05-30 2009-02-16 Toagosei Co Ltd Active energy ray curable composition, coating composition, coating member, and optical material
TW200906869A (en) * 2007-05-30 2009-02-16 Toagosei Co Ltd Active energy ray curable composition and optical material
JP5251523B2 (ja) * 2008-07-08 2013-07-31 日立化成株式会社 感光性樹脂組成物、並びにこれを用いた感光性エレメント、レジストパターンの形成方法及びプリント配線板の製造方法
JP5423004B2 (ja) * 2009-01-08 2014-02-19 東レ株式会社 ネガ型感光性樹脂組成物およびそれを用いたタッチパネル用材料
KR101842728B1 (ko) * 2010-05-07 2018-03-27 쓰리엠 이노베이티브 프로퍼티즈 컴파니 미세구조화 표면을 포함하는 반사방지 필름
JP5778462B2 (ja) * 2011-04-18 2015-09-16 旭有機材工業株式会社 アントラセン誘導体及びこの製造方法、硬化性組成物並びに硬化物
CN102778814B (zh) * 2012-07-05 2014-04-23 常州强力先端电子材料有限公司 一种含有酮肟酯类光引发剂的感光性组合物及其应用
WO2015137486A1 (fr) * 2014-03-13 2015-09-17 三菱瓦斯化学株式会社 Composé, résine, matériau de formation de film de couche de base pour lithographie, film de couche de base pour lithographie, procédé de formation de motif, et procédé pour composé ou résine de raffinage
JP7026439B2 (ja) * 2014-12-25 2022-02-28 三菱瓦斯化学株式会社 化合物、樹脂、リソグラフィー用下層膜形成材料、リソグラフィー用下層膜、パターン形成方法及び精製方法
KR20180030847A (ko) * 2015-07-23 2018-03-26 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 신규 화합물 및 그 제조방법
EP3326997A4 (fr) * 2015-07-23 2019-04-03 Mitsubishi Gas Chemical Company, Inc. Nouveau composé de (méth)acryloyle et son procédé de production
WO2017038643A1 (fr) * 2015-08-31 2017-03-09 三菱瓦斯化学株式会社 Matériau permettant de former des films de sous-couche pour lithographie, composition pour former des films de sous-couche pour lithographie, film de sous-couche pour lithographie et son procédé de production, et procédé de formation de motif de réserve
US11143962B2 (en) * 2015-08-31 2021-10-12 Mitsubishi Gas Chemical Company, Inc. Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, underlayer film for lithography and production method thereof, pattern forming method, resin, and purification method
KR20180051533A (ko) * 2015-09-03 2018-05-16 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물 및 그 제조방법, 그리고, 조성물, 광학부품 형성용 조성물, 리소그래피용 막형성 조성물, 레지스트 조성물, 레지스트 패턴의 형성방법, 감방사선성 조성물, 아몰퍼스막의 제조방법, 리소그래피용 하층막 형성재료, 리소그래피용 하층막 형성용 조성물, 리소그래피용 하층막의 제조방법, 레지스트 패턴 형성방법, 회로패턴 형성방법, 및, 정제방법
US11243467B2 (en) * 2015-09-10 2022-02-08 Mitsubishi Gas Chemical Company, Inc. Compound, resin, resist composition or radiation-sensitive composition, resist pattern formation method, method for producing amorphous film, underlayer film forming material for lithography, composition for underlayer film formation for lithography, method for forming circuit pattern, and purification method
WO2017111165A1 (fr) * 2015-12-25 2017-06-29 三菱瓦斯化学株式会社 Composé, résine, composition, procédé de formation de motif de photorésine et procédé de formation de motif de circuit
JP7069529B2 (ja) * 2016-07-21 2022-05-18 三菱瓦斯化学株式会社 化合物、樹脂、組成物並びにレジストパターン形成方法及び回路パターン形成方法
KR20190032379A (ko) * 2016-07-21 2019-03-27 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 수지, 조성물 및 패턴 형성방법
CN109415286A (zh) * 2016-07-21 2019-03-01 三菱瓦斯化学株式会社 化合物、树脂、组合物和图案形成方法
WO2018016640A1 (fr) * 2016-07-21 2018-01-25 三菱瓦斯化学株式会社 Composé, résine, composition, procédé de formation de motif de réserve et procédé de formation de circuit

Patent Citations (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002334869A (ja) 2001-02-07 2002-11-22 Tokyo Electron Ltd シリコン窒化膜の形成方法、形成装置及びこの形成装置の洗浄前処理方法
JP2004177668A (ja) 2002-11-27 2004-06-24 Tokyo Ohka Kogyo Co Ltd 多層レジストプロセス用下層膜形成材料およびこれを用いた配線形成方法
WO2004066377A1 (fr) 2003-01-24 2004-08-05 Tokyo Electron Limited Procede de depot chimique en phase vapeur pour former un film de nitrure de silicium sur un substrat
JP2004271838A (ja) 2003-03-07 2004-09-30 Shin Etsu Chem Co Ltd レジスト下層膜材料ならびにパターン形成方法
JP2005250434A (ja) 2004-02-04 2005-09-15 Shin Etsu Chem Co Ltd レジスト下層膜材料ならびにパターン形成方法
JP2005326838A (ja) 2004-04-15 2005-11-24 Mitsubishi Gas Chem Co Inc レジスト組成物
JP2007226204A (ja) 2006-01-25 2007-09-06 Shin Etsu Chem Co Ltd 反射防止膜材料、基板、及びパターン形成方法
JP2007226170A (ja) 2006-01-27 2007-09-06 Shin Etsu Chem Co Ltd 反射防止膜材料、反射防止膜を有する基板及びパターン形成方法
JP2008145539A (ja) 2006-12-06 2008-06-26 Mitsubishi Gas Chem Co Inc 感放射線性レジスト組成物
JP2009173623A (ja) 2007-04-23 2009-08-06 Mitsubishi Gas Chem Co Inc 感放射線性組成物
JP2010138393A (ja) 2008-11-13 2010-06-24 Nippon Kayaku Co Ltd 光学レンズシート用エネルギー線硬化型樹脂組成物及びその硬化物
WO2013024778A1 (fr) 2011-08-12 2013-02-21 三菱瓦斯化学株式会社 Composition de réserve, procédé de formation de motif de réserve, composé polyphénol mis en œuvre dans ce procédé, et composé alcool obtenu par dérivation de ce composé polyphénol
WO2013024779A1 (fr) 2011-08-12 2013-02-21 三菱瓦斯化学株式会社 Film de sous-couche pour lithographie ainsi que matériau pour formation de celui-ci, et procédé de formation de motif
WO2014123005A1 (fr) 2013-02-08 2014-08-14 三菱瓦斯化学株式会社 Nouveau composé allyle, et procédé de fabrication de celui-ci
JP2015174877A (ja) 2014-03-13 2015-10-05 日産化学工業株式会社 特定の硬化促進触媒を含む樹脂組成物

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
T.Nakayama, M.Nomura, K.Haga, M.Ueda: Bull.Chem.Soc.Jpn.,71,2979(1998)
오카자키 신지, 외 22명 「포토레지스트재료개발의 신전개」 주식회사씨엠씨출판, 2009년 9월, p.211-259

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