KR20170093907A - 웨이퍼 고정 테이프, 반도체 웨이퍼의 처리 방법 및 반도체 칩 - Google Patents
웨이퍼 고정 테이프, 반도체 웨이퍼의 처리 방법 및 반도체 칩 Download PDFInfo
- Publication number
- KR20170093907A KR20170093907A KR1020177018634A KR20177018634A KR20170093907A KR 20170093907 A KR20170093907 A KR 20170093907A KR 1020177018634 A KR1020177018634 A KR 1020177018634A KR 20177018634 A KR20177018634 A KR 20177018634A KR 20170093907 A KR20170093907 A KR 20170093907A
- Authority
- KR
- South Korea
- Prior art keywords
- wafer
- plasma
- tape
- semiconductor wafer
- fixing tape
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Images
Classifications
-
- C09J7/0264—
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J7/00—Adhesives in the form of films or foils
- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
-
- C09J2201/622—
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/312—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier parameters being the characterizing feature
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
- C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/414—Additional features of adhesives in the form of films or foils characterized by the presence of essential components presence of a copolymer
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
- C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2423/00—Presence of polyolefin
- C09J2423/04—Presence of homo or copolymers of ethene
- C09J2423/046—Presence of homo or copolymers of ethene in the substrate
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2433/00—Presence of (meth)acrylic polymer
- C09J2433/006—Presence of (meth)acrylic polymer in the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
- H01L21/31138—Etching organic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6834—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Plasma & Fusion (AREA)
- Dicing (AREA)
- Adhesive Tapes (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JPJP-P-2015-051481 | 2015-03-13 | ||
| JP2015051481A JP6490459B2 (ja) | 2015-03-13 | 2015-03-13 | ウェハ固定テープ、半導体ウェハの処理方法および半導体チップ |
| PCT/JP2016/057614 WO2016148024A1 (ja) | 2015-03-13 | 2016-03-10 | ウェハ固定テープ、半導体ウェハの処理方法および半導体チップ |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20170093907A true KR20170093907A (ko) | 2017-08-16 |
Family
ID=56918875
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020177018634A Ceased KR20170093907A (ko) | 2015-03-13 | 2016-03-10 | 웨이퍼 고정 테이프, 반도체 웨이퍼의 처리 방법 및 반도체 칩 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US10699933B2 (enExample) |
| JP (1) | JP6490459B2 (enExample) |
| KR (1) | KR20170093907A (enExample) |
| CN (1) | CN107112222B (enExample) |
| WO (1) | WO2016148024A1 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190079424A (ko) * | 2017-12-27 | 2019-07-05 | 주식회사 엘지화학 | 편광판용 점착제 조성물, 편광판 및 디스플레이 장치 |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6802029B2 (ja) * | 2016-10-07 | 2020-12-16 | 積水化学工業株式会社 | 半導体保護テープ |
| JP2018060964A (ja) * | 2016-10-07 | 2018-04-12 | 積水化学工業株式会社 | 半導体装置の製造方法 |
| JP6740081B2 (ja) * | 2016-10-20 | 2020-08-12 | 株式会社ディスコ | ウエーハの加工方法 |
| TWI679691B (zh) * | 2016-11-30 | 2019-12-11 | 美商帕斯馬舍門有限責任公司 | 用於電漿切割半導體晶圓的方法與設備 |
| JP6917058B2 (ja) | 2017-06-06 | 2021-08-11 | 丸石産業株式会社 | 吸着層を備える研磨パッドを使用する研磨方法 |
| JP6782215B2 (ja) * | 2017-10-18 | 2020-11-11 | 古河電気工業株式会社 | プラズマダイシング用マスク材、マスク一体型表面保護テープおよび半導体チップの製造方法 |
| CN111684584A (zh) * | 2018-02-01 | 2020-09-18 | 康宁股份有限公司 | 用于卷形式的电子封装和其他应用的单一化基材 |
| JP7042667B2 (ja) * | 2018-03-28 | 2022-03-28 | 古河電気工業株式会社 | 半導体チップの製造方法 |
| JP6719694B1 (ja) * | 2018-11-26 | 2020-07-08 | リンテック株式会社 | プラズマダイシング用ダイシングシート |
| TWI846807B (zh) * | 2019-01-25 | 2024-07-01 | 日商古河電氣工業股份有限公司 | 半導體晶圓加工用紫外線硬化型黏著帶及半導體晶片之製造方法以及該帶之使用方法 |
| JP6678796B1 (ja) * | 2019-04-08 | 2020-04-08 | 古河電気工業株式会社 | 電子部品用テープおよび電子部品の加工方法 |
| CN111633589A (zh) * | 2020-06-16 | 2020-09-08 | 南京沃天科技有限公司 | 一种传感器芯片夹持固定结构 |
| CN112125277B (zh) * | 2020-10-10 | 2024-02-13 | 上海科技大学 | 一种适用于超导探测器玻璃窗的制备工艺 |
| KR20230098594A (ko) * | 2020-11-09 | 2023-07-04 | 덴카 주식회사 | 점착 테이프 및 가공 방법 |
| CN118519321B (zh) * | 2024-07-24 | 2024-11-19 | 江苏雷博微电子设备有限公司 | 一种去胶剥离机的去胶调控方法及系统 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004172364A (ja) * | 2002-11-20 | 2004-06-17 | Matsushita Electric Ind Co Ltd | プラズマ処理装置およびプラズマ処理方法 |
Family Cites Families (36)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR910015403A (ko) * | 1990-02-14 | 1991-09-30 | 사와무라 하루오 | 웨이퍼 가공용 필름 |
| JP2002373871A (ja) * | 2001-06-15 | 2002-12-26 | Sekisui Chem Co Ltd | Icチップの製造方法 |
| US6686225B2 (en) * | 2001-07-27 | 2004-02-03 | Texas Instruments Incorporated | Method of separating semiconductor dies from a wafer |
| JP3612317B2 (ja) * | 2001-11-30 | 2005-01-19 | 株式会社東芝 | 半導体装置の製造方法 |
| US6897128B2 (en) * | 2002-11-20 | 2005-05-24 | Matsushita Electric Industrial Co., Ltd. | Method of manufacturing semiconductor device, plasma processing apparatus and plasma processing method |
| EP1619227B1 (en) * | 2003-04-14 | 2014-05-07 | Sekisui Chemical Co., Ltd. | Method for releasing adhered article |
| JP4275096B2 (ja) * | 2005-04-14 | 2009-06-10 | パナソニック株式会社 | 半導体チップの製造方法 |
| JP4549239B2 (ja) * | 2005-06-22 | 2010-09-22 | 日東電工株式会社 | ダイシング用粘着シート |
| JP4333649B2 (ja) | 2005-07-11 | 2009-09-16 | パナソニック株式会社 | 半導体チップの製造方法 |
| US20100178501A1 (en) * | 2006-01-23 | 2010-07-15 | Takashi Masuko | Adhesive composition, film-like adhesive, adhesive sheet, and semiconductor device made with the same |
| JP4970863B2 (ja) * | 2006-07-13 | 2012-07-11 | 日東電工株式会社 | 被加工物の加工方法 |
| JPWO2008015759A1 (ja) * | 2006-08-04 | 2009-12-17 | 日立化成工業株式会社 | フィルム状接着剤、接着シート及びこれを使用した半導体装置 |
| US20080063871A1 (en) * | 2006-09-11 | 2008-03-13 | Jung Ki S | Adhesive film composition for semiconductor assembly, associated dicing die bonding film and semiconductor package |
| KR100800214B1 (ko) * | 2006-12-13 | 2008-02-01 | 제일모직주식회사 | 반도체 조립용 접착 필름 조성물 및 접착 필름 |
| JP4840174B2 (ja) * | 2007-02-08 | 2011-12-21 | パナソニック株式会社 | 半導体チップの製造方法 |
| US8012857B2 (en) * | 2007-08-07 | 2011-09-06 | Semiconductor Components Industries, Llc | Semiconductor die singulation method |
| TW200935506A (en) * | 2007-11-16 | 2009-08-16 | Panasonic Corp | Plasma dicing apparatus and semiconductor chip manufacturing method |
| JP5503113B2 (ja) * | 2008-05-08 | 2014-05-28 | 古河電気工業株式会社 | 半導体装置、ウエハ構造体および半導体装置の製造方法 |
| EP2311921A4 (en) * | 2008-08-04 | 2012-02-01 | Hitachi Chemical Co Ltd | ADHESIVE COMPOSITION, FILM-TYPE LUBRICANT, ADHESIVE AND SEMICONDUCTOR ELEMENT |
| KR20110016987A (ko) * | 2008-08-27 | 2011-02-18 | 히다치 가세고교 가부시끼가이샤 | 감광성 접착제 조성물, 필름상 감광성 접착제, 접착제 패턴, 접착제 부착 반도체 웨이퍼, 반도체 장치, 및 전자 부품 |
| JP5732815B2 (ja) * | 2009-10-30 | 2015-06-10 | 日立化成株式会社 | 感光性接着剤組成物、並びにそれを用いたフィルム状接着剤、接着シート、接着剤パターン、接着剤層付半導体ウェハ、接着剤層付透明基板、及び半導体装置。 |
| US20120256326A1 (en) * | 2009-11-13 | 2012-10-11 | Kazuyuki Mitsukura | Adhesive composition, semiconductor device making use thereof, and production method thereof |
| JP5582836B2 (ja) * | 2010-03-26 | 2014-09-03 | 古河電気工業株式会社 | ダイシング・ダイボンディングテープ |
| JP5461292B2 (ja) | 2010-04-28 | 2014-04-02 | 日立マクセル株式会社 | ダイシング用粘着フィルム、及び切断片の製造方法 |
| KR101311647B1 (ko) * | 2010-07-07 | 2013-09-25 | 후루카와 덴키 고교 가부시키가이샤 | 웨이퍼 가공용 테이프 및 그것을 이용한 반도체 가공 방법 |
| JP5583080B2 (ja) * | 2010-07-07 | 2014-09-03 | 古河電気工業株式会社 | ウエハ加工用テープおよびそれを用いた半導体加工方法 |
| US8728910B2 (en) * | 2010-09-30 | 2014-05-20 | Mitsui Chemicals, Inc. | Expandable film, dicing film, and method of producing semiconductor device |
| JP5666875B2 (ja) * | 2010-10-21 | 2015-02-12 | アキレス株式会社 | 半導体製造工程用テープの基材フィルム |
| JP5667942B2 (ja) * | 2011-01-21 | 2015-02-12 | 株式会社東芝 | 半導体装置の製造方法 |
| JP2013038408A (ja) * | 2011-07-14 | 2013-02-21 | Nitto Denko Corp | 半導体ウェハ固定用粘着テープ、半導体チップの製造方法及び接着フィルム付き粘着テープ |
| US9136173B2 (en) * | 2012-11-07 | 2015-09-15 | Semiconductor Components Industries, Llc | Singulation method for semiconductor die having a layer of material along one major surface |
| JP5855034B2 (ja) * | 2013-02-18 | 2016-02-09 | 古河電気工業株式会社 | 半導体ウェハ加工用粘着テープ及び半導体ウェハの分割方法 |
| JP6335882B2 (ja) * | 2013-03-26 | 2018-05-30 | 三井化学東セロ株式会社 | 積層フィルムの製造方法 |
| WO2014200071A1 (ja) * | 2013-06-14 | 2014-12-18 | 電気化学工業株式会社 | 粘着シート |
| US10865329B2 (en) * | 2015-04-29 | 2020-12-15 | Lg Chem, Ltd. | Adhesive film for semiconductor |
| JP6524535B2 (ja) * | 2016-03-11 | 2019-06-05 | パナソニックIpマネジメント株式会社 | 素子チップおよびその製造方法 |
-
2015
- 2015-03-13 JP JP2015051481A patent/JP6490459B2/ja active Active
-
2016
- 2016-03-10 CN CN201680005372.0A patent/CN107112222B/zh active Active
- 2016-03-10 KR KR1020177018634A patent/KR20170093907A/ko not_active Ceased
- 2016-03-10 WO PCT/JP2016/057614 patent/WO2016148024A1/ja not_active Ceased
-
2017
- 2017-09-12 US US15/702,455 patent/US10699933B2/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004172364A (ja) * | 2002-11-20 | 2004-06-17 | Matsushita Electric Ind Co Ltd | プラズマ処理装置およびプラズマ処理方法 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20190079424A (ko) * | 2017-12-27 | 2019-07-05 | 주식회사 엘지화학 | 편광판용 점착제 조성물, 편광판 및 디스플레이 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6490459B2 (ja) | 2019-03-27 |
| CN107112222A (zh) | 2017-08-29 |
| CN107112222B (zh) | 2021-03-16 |
| US20180012788A1 (en) | 2018-01-11 |
| JP2016171261A (ja) | 2016-09-23 |
| US10699933B2 (en) | 2020-06-30 |
| WO2016148024A1 (ja) | 2016-09-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR20170093907A (ko) | 웨이퍼 고정 테이프, 반도체 웨이퍼의 처리 방법 및 반도체 칩 | |
| TWI782802B (zh) | 半導體加工用板片及半導體裝置的製造方法 | |
| KR20170094301A (ko) | 반도체 웨이퍼의 처리 방법, 반도체 칩 및 표면 보호 테이프 | |
| JP7042667B2 (ja) | 半導体チップの製造方法 | |
| KR20170122185A (ko) | 반도체 칩의 제조방법 및 이것에 이용하는 마스크 일체형 표면 보호 테이프 | |
| JP6845134B2 (ja) | マスク一体型表面保護テープ | |
| KR101554458B1 (ko) | 반도체 웨이퍼 보호용 점착 테이프 | |
| CN108713240B (zh) | 掩模一体型表面保护带 | |
| TWI686852B (zh) | 遮罩一體型表面保護帶 | |
| TWI686853B (zh) | 附剝離襯墊之遮罩一體型表面保護帶 | |
| TWI507502B (zh) | Semiconductor wafer processing adhesive sheet | |
| JP2019145575A (ja) | マスキング材 | |
| WO2004107423A1 (ja) | 貫通構造を有する薄膜化回路基板の製造方法と保護用粘着テープ | |
| TWI788537B (zh) | 黏著薄板 | |
| JP2019134091A (ja) | マスク一体型表面保護テープおよびマスク一体型表面保護テープを用いる半導体チップの製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| PA0105 | International application |
Patent event date: 20170705 Patent event code: PA01051R01D Comment text: International Patent Application |
|
| PA0201 | Request for examination | ||
| PG1501 | Laying open of application | ||
| E902 | Notification of reason for refusal | ||
| PE0902 | Notice of grounds for rejection |
Comment text: Notification of reason for refusal Patent event date: 20180515 Patent event code: PE09021S01D |
|
| E601 | Decision to refuse application | ||
| PE0601 | Decision on rejection of patent |
Patent event date: 20181129 Comment text: Decision to Refuse Application Patent event code: PE06012S01D Patent event date: 20180515 Comment text: Notification of reason for refusal Patent event code: PE06011S01I |