KR20170080718A - 발광 반도체 칩 - Google Patents

발광 반도체 칩 Download PDF

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Publication number
KR20170080718A
KR20170080718A KR1020177017884A KR20177017884A KR20170080718A KR 20170080718 A KR20170080718 A KR 20170080718A KR 1020177017884 A KR1020177017884 A KR 1020177017884A KR 20177017884 A KR20177017884 A KR 20177017884A KR 20170080718 A KR20170080718 A KR 20170080718A
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KR
South Korea
Prior art keywords
quantum
semiconductor chip
layer
semiconductor
doping
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Ceased
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KR1020177017884A
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English (en)
Korean (ko)
Inventor
마티아스 페터
토비아스 마이어
알렉산더 발터
테츠야 타키
외르겐 오프
라이너 부텐다이히
요아힘 헤르트콘
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20170080718A publication Critical patent/KR20170080718A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H01L33/04—
    • H01L33/06—
    • H01L33/14—
    • H01L33/22—
    • H01L33/24—
    • H01L33/382—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/821—Bodies characterised by their shape, e.g. curved or truncated substrates of the light-emitting regions, e.g. non-planar junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape
    • H10H20/8312—Electrodes characterised by their shape extending at least partially through the bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Led Devices (AREA)
KR1020177017884A 2009-12-30 2010-12-27 발광 반도체 칩 Ceased KR20170080718A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009060747.1 2009-12-30
DE102009060747.1A DE102009060747B4 (de) 2009-12-30 2009-12-30 Halbleiterchip
PCT/EP2010/070761 WO2011080249A1 (de) 2009-12-30 2010-12-27 Lichtemittierender halbleiterchip

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020127020140A Division KR101755586B1 (ko) 2009-12-30 2010-12-27 발광 반도체 칩

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187018915A Division KR20180078359A (ko) 2009-12-30 2010-12-27 발광 반도체 칩

Publications (1)

Publication Number Publication Date
KR20170080718A true KR20170080718A (ko) 2017-07-10

Family

ID=43827573

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020177017884A Ceased KR20170080718A (ko) 2009-12-30 2010-12-27 발광 반도체 칩
KR1020127020140A Active KR101755586B1 (ko) 2009-12-30 2010-12-27 발광 반도체 칩
KR1020187018915A Ceased KR20180078359A (ko) 2009-12-30 2010-12-27 발광 반도체 칩

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020127020140A Active KR101755586B1 (ko) 2009-12-30 2010-12-27 발광 반도체 칩
KR1020187018915A Ceased KR20180078359A (ko) 2009-12-30 2010-12-27 발광 반도체 칩

Country Status (8)

Country Link
US (4) US9012885B2 (enExample)
EP (1) EP2519980B1 (enExample)
JP (1) JP5735984B2 (enExample)
KR (3) KR20170080718A (enExample)
CN (2) CN106229395B (enExample)
DE (1) DE102009060747B4 (enExample)
TW (1) TWI449212B (enExample)
WO (1) WO2011080249A1 (enExample)

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DE102009060747B4 (de) 2009-12-30 2025-01-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterchip
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DE102011100037A1 (de) 2011-04-29 2012-10-31 Osram Opto Semiconductors Gmbh Strahlung emittierender Halbleiterchip mit integriertem ESD-Schutz
JP5123414B2 (ja) * 2011-05-16 2013-01-23 株式会社東芝 半導体発光素子、窒化物半導体ウェーハ及び窒化物半導体層の製造方法
US9070613B2 (en) * 2011-09-07 2015-06-30 Lg Innotek Co., Ltd. Light emitting device
DE102013103602A1 (de) * 2013-04-10 2014-10-16 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu seiner Herstellung
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KR102391513B1 (ko) 2015-10-05 2022-04-27 삼성전자주식회사 물질막 적층체, 발광 소자, 발광 패키지, 및 발광 소자의 제조 방법
KR102189614B1 (ko) * 2016-07-28 2020-12-11 루미레즈 엘엘씨 초격자를 갖는 iii-p 발광 디바이스
US20180033912A1 (en) * 2016-07-28 2018-02-01 Lumileds Llc Iii-p light emitting device with a superlattice
DE102016120419A1 (de) * 2016-10-26 2018-04-26 Osram Opto Semiconductors Gmbh Halbleiterkörper
DE102016123262B4 (de) * 2016-12-01 2025-07-24 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Strahlungsemittierender Halbleiterkörper und Verfahren zur Herstellung einer Halbleiterschichtenfolge
DE102017104370A1 (de) * 2017-03-02 2018-09-06 Osram Opto Semiconductors Gmbh Halbleiterkörper

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Also Published As

Publication number Publication date
CN106229395A (zh) 2016-12-14
EP2519980A1 (de) 2012-11-07
US9799797B2 (en) 2017-10-24
US9530931B2 (en) 2016-12-27
KR101755586B1 (ko) 2017-07-07
CN102687290A (zh) 2012-09-19
US20170025570A1 (en) 2017-01-26
US9012885B2 (en) 2015-04-21
WO2011080249A1 (de) 2011-07-07
TWI449212B (zh) 2014-08-11
CN102687290B (zh) 2016-08-17
KR20120102146A (ko) 2012-09-17
JP2013516751A (ja) 2013-05-13
TW201135968A (en) 2011-10-16
US20150194570A1 (en) 2015-07-09
KR20180078359A (ko) 2018-07-09
CN106229395B (zh) 2020-08-14
JP5735984B2 (ja) 2015-06-17
US20120298964A1 (en) 2012-11-29
DE102009060747B4 (de) 2025-01-09
EP2519980B1 (de) 2019-04-03
US10388828B2 (en) 2019-08-20
DE102009060747A1 (de) 2011-07-07
US20170324001A1 (en) 2017-11-09

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