KR20170012146A - 발광소자 및 그 제조방법 - Google Patents

발광소자 및 그 제조방법 Download PDF

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Publication number
KR20170012146A
KR20170012146A KR1020160093740A KR20160093740A KR20170012146A KR 20170012146 A KR20170012146 A KR 20170012146A KR 1020160093740 A KR1020160093740 A KR 1020160093740A KR 20160093740 A KR20160093740 A KR 20160093740A KR 20170012146 A KR20170012146 A KR 20170012146A
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South Korea
Prior art keywords
semiconductor
quantum well
multiple quantum
carrier
light emitting
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Ceased
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KR1020160093740A
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English (en)
Korean (ko)
Inventor
샤오-핑 루
천-푸 차이
천-유 린
유-런 펭
이-밍 첸
추-치에 수
Original Assignee
에피스타 코포레이션
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Publication of KR20170012146A publication Critical patent/KR20170012146A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H01L33/04—
    • H01L33/005—
    • H01L33/02—
    • H01L33/10—
    • H01L33/36—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H01L2924/12041—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies

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KR1020160093740A 2015-07-24 2016-07-22 발광소자 및 그 제조방법 Ceased KR20170012146A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/808,295 2015-07-24
US14/808,295 US9825088B2 (en) 2015-07-24 2015-07-24 Light-emitting device and manufacturing method thereof

Publications (1)

Publication Number Publication Date
KR20170012146A true KR20170012146A (ko) 2017-02-02

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KR1020160093740A Ceased KR20170012146A (ko) 2015-07-24 2016-07-22 발광소자 및 그 제조방법

Country Status (6)

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US (2) US9825088B2 (https=)
JP (1) JP6925107B2 (https=)
KR (1) KR20170012146A (https=)
CN (2) CN106374018B (https=)
DE (1) DE102016111923B4 (https=)
TW (1) TWI736544B (https=)

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WO2019059561A1 (ko) * 2017-09-19 2019-03-28 주식회사 썬다이오드코리아 다중 터널 정션 구조를 가지는 발광 다이오드
KR20190138719A (ko) * 2018-06-05 2019-12-16 삼성전자주식회사 다파장 광원 장치, 이를 포함하는 다기능 프로젝터 및 다기능 프로젝터를 포함하는 전자 장치

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US10804429B2 (en) * 2017-12-22 2020-10-13 Lumileds Llc III-nitride multi-wavelength LED for visible light communication
CN108417675B (zh) * 2018-03-27 2020-11-03 厦门乾照光电股份有限公司 一种具有水平桥接结构的高压发光二极管及其制作方法
TWI672466B (zh) * 2018-04-11 2019-09-21 Asti Global Inc., Taiwan 微型發光二極體顯示器及其製作方法
TWI806793B (zh) * 2018-08-28 2023-06-21 晶元光電股份有限公司 半導體裝置
TWI785106B (zh) * 2018-08-28 2022-12-01 晶元光電股份有限公司 半導體裝置
US11621253B2 (en) * 2018-11-02 2023-04-04 Seoul Viosys Co., Ltd. Light emitting device
TWI794380B (zh) * 2018-12-24 2023-03-01 晶元光電股份有限公司 半導體元件
JP7323783B2 (ja) * 2019-07-19 2023-08-09 日亜化学工業株式会社 発光装置の製造方法及び発光装置
GB2586580B (en) * 2019-08-06 2022-01-12 Plessey Semiconductors Ltd LED array and method of forming a LED array
US11362133B2 (en) 2019-09-11 2022-06-14 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel
US10930814B1 (en) * 2019-09-11 2021-02-23 Jade Bird Display (shanghai) Limited Method of manufacturing multi-color light emitting pixel unit
US11114419B2 (en) * 2019-09-11 2021-09-07 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel
US12426428B2 (en) * 2019-09-11 2025-09-23 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel
US10879217B1 (en) * 2019-09-11 2020-12-29 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel
CN110767670B (zh) * 2019-10-31 2022-11-15 成都辰显光电有限公司 显示面板、显示装置和显示面板的制作方法
US12408481B2 (en) 2019-12-19 2025-09-02 Lumileds Llc Light emitting diode (LED) devices with nucleation layer
US11264530B2 (en) 2019-12-19 2022-03-01 Lumileds Llc Light emitting diode (LED) devices with nucleation layer
US11211527B2 (en) 2019-12-19 2021-12-28 Lumileds Llc Light emitting diode (LED) devices with high density textures
EP4082043A1 (en) * 2019-12-23 2022-11-02 Lumileds LLC Iii-nitride multi-wavelength led array
US11923398B2 (en) 2019-12-23 2024-03-05 Lumileds Llc III-nitride multi-wavelength LED arrays
US11404473B2 (en) 2019-12-23 2022-08-02 Lumileds Llc III-nitride multi-wavelength LED arrays
JP7534427B2 (ja) * 2020-02-10 2024-08-14 グーグル エルエルシー ディスプレイデバイスおよび関連付けられた方法
KR20210106054A (ko) 2020-02-19 2021-08-30 삼성디스플레이 주식회사 발광 소자 및 이를 포함한 표시 장치
AU2021246026A1 (en) * 2020-03-30 2022-11-03 Jade Bird Display (shanghai) Limited Systems and methods for multi-color LED with stacked bonding structures
US11631786B2 (en) * 2020-11-12 2023-04-18 Lumileds Llc III-nitride multi-wavelength LED arrays with etch stop layer
JP7333504B2 (ja) 2020-11-16 2023-08-25 日亜化学工業株式会社 発光素子
CN112820805A (zh) * 2021-02-19 2021-05-18 福建兆元光电有限公司 一种芯片外延层结构及其制造方法
TWI856777B (zh) * 2022-08-12 2024-09-21 大陸商上海顯耀顯示科技有限公司 多色ｌｅｄ像素單元和微型ｌｅｄ顯示面板
JP2024106488A (ja) * 2023-01-27 2024-08-08 ウシオ電機株式会社 赤外ｌｅｄ素子
CN119108407B (zh) * 2023-06-08 2025-10-03 武汉华星光电半导体显示技术有限公司 一种显示面板及其制备方法

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JP2004014965A (ja) * 2002-06-11 2004-01-15 Matsushita Electric Ind Co Ltd 半導体発光素子
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WO2019059561A1 (ko) * 2017-09-19 2019-03-28 주식회사 썬다이오드코리아 다중 터널 정션 구조를 가지는 발광 다이오드
US11152537B2 (en) 2017-09-19 2021-10-19 Sundiode Korea Light emitting diode with multiple tunnel junction structure
KR20190138719A (ko) * 2018-06-05 2019-12-16 삼성전자주식회사 다파장 광원 장치, 이를 포함하는 다기능 프로젝터 및 다기능 프로젝터를 포함하는 전자 장치

Also Published As

Publication number Publication date
TWI736544B (zh) 2021-08-21
JP6925107B2 (ja) 2021-08-25
DE102016111923B4 (de) 2025-07-24
US20180012929A1 (en) 2018-01-11
CN112234126A (zh) 2021-01-15
US9825088B2 (en) 2017-11-21
DE102016111923A1 (de) 2017-02-09
CN106374018A (zh) 2017-02-01
JP2017028287A (ja) 2017-02-02
TW201705520A (zh) 2017-02-01
CN112234126B (zh) 2024-12-24
US20170025567A1 (en) 2017-01-26
CN106374018B (zh) 2020-10-20

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