CN106374018B - 发光元件及其制造方法 - Google Patents

发光元件及其制造方法 Download PDF

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Publication number
CN106374018B
CN106374018B CN201610581500.8A CN201610581500A CN106374018B CN 106374018 B CN106374018 B CN 106374018B CN 201610581500 A CN201610581500 A CN 201610581500A CN 106374018 B CN106374018 B CN 106374018B
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light
semiconductor
layer
semiconductor structure
electrode
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CN106374018A (zh
Inventor
吕绍平
陈怡名
彭钰仁
林俊宇
蔡均富
徐子杰
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Fucai Optoelectronics Co., Ltd.
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Epistar Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/814—Bodies having reflecting means, e.g. semiconductor Bragg reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies

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CN201610581500.8A 2015-07-24 2016-07-22 发光元件及其制造方法 Active CN106374018B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202010984325.3A CN112234126B (zh) 2015-07-24 2016-07-22 发光元件及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/808,295 2015-07-24
US14/808,295 US9825088B2 (en) 2015-07-24 2015-07-24 Light-emitting device and manufacturing method thereof

Related Child Applications (1)

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CN202010984325.3A Division CN112234126B (zh) 2015-07-24 2016-07-22 发光元件及其制造方法

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CN106374018B true CN106374018B (zh) 2020-10-20

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US (2) US9825088B2 (https=)
JP (1) JP6925107B2 (https=)
KR (1) KR20170012146A (https=)
CN (2) CN106374018B (https=)
DE (1) DE102016111923B4 (https=)
TW (1) TWI736544B (https=)

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US10930814B1 (en) * 2019-09-11 2021-02-23 Jade Bird Display (shanghai) Limited Method of manufacturing multi-color light emitting pixel unit
US11114419B2 (en) * 2019-09-11 2021-09-07 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel
US12426428B2 (en) * 2019-09-11 2025-09-23 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel
US10879217B1 (en) * 2019-09-11 2020-12-29 Jade Bird Display (shanghai) Limited Multi-color LED pixel unit and micro-LED display panel
CN110767670B (zh) * 2019-10-31 2022-11-15 成都辰显光电有限公司 显示面板、显示装置和显示面板的制作方法
US12408481B2 (en) 2019-12-19 2025-09-02 Lumileds Llc Light emitting diode (LED) devices with nucleation layer
US11264530B2 (en) 2019-12-19 2022-03-01 Lumileds Llc Light emitting diode (LED) devices with nucleation layer
US11211527B2 (en) 2019-12-19 2021-12-28 Lumileds Llc Light emitting diode (LED) devices with high density textures
EP4082043A1 (en) * 2019-12-23 2022-11-02 Lumileds LLC Iii-nitride multi-wavelength led array
US11923398B2 (en) 2019-12-23 2024-03-05 Lumileds Llc III-nitride multi-wavelength LED arrays
US11404473B2 (en) 2019-12-23 2022-08-02 Lumileds Llc III-nitride multi-wavelength LED arrays
JP7534427B2 (ja) * 2020-02-10 2024-08-14 グーグル エルエルシー ディスプレイデバイスおよび関連付けられた方法
KR20210106054A (ko) 2020-02-19 2021-08-30 삼성디스플레이 주식회사 발광 소자 및 이를 포함한 표시 장치
AU2021246026A1 (en) * 2020-03-30 2022-11-03 Jade Bird Display (shanghai) Limited Systems and methods for multi-color LED with stacked bonding structures
US11631786B2 (en) * 2020-11-12 2023-04-18 Lumileds Llc III-nitride multi-wavelength LED arrays with etch stop layer
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TWI856777B (zh) * 2022-08-12 2024-09-21 大陸商上海顯耀顯示科技有限公司 多色ｌｅｄ像素單元和微型ｌｅｄ顯示面板
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Also Published As

Publication number Publication date
TWI736544B (zh) 2021-08-21
JP6925107B2 (ja) 2021-08-25
DE102016111923B4 (de) 2025-07-24
US20180012929A1 (en) 2018-01-11
CN112234126A (zh) 2021-01-15
KR20170012146A (ko) 2017-02-02
US9825088B2 (en) 2017-11-21
DE102016111923A1 (de) 2017-02-09
CN106374018A (zh) 2017-02-01
JP2017028287A (ja) 2017-02-02
TW201705520A (zh) 2017-02-01
CN112234126B (zh) 2024-12-24
US20170025567A1 (en) 2017-01-26

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Address after: Hsinchu City, Taiwan, China

Patentee after: Fucai Optoelectronics Co., Ltd.

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Patentee before: EPISTAR Corp.

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