KR20160130977A - Anisotropic conductive adhesive, method for producing connector and method for connecting electronic component - Google Patents

Anisotropic conductive adhesive, method for producing connector and method for connecting electronic component Download PDF

Info

Publication number
KR20160130977A
KR20160130977A KR1020167018337A KR20167018337A KR20160130977A KR 20160130977 A KR20160130977 A KR 20160130977A KR 1020167018337 A KR1020167018337 A KR 1020167018337A KR 20167018337 A KR20167018337 A KR 20167018337A KR 20160130977 A KR20160130977 A KR 20160130977A
Authority
KR
South Korea
Prior art keywords
light
anisotropic conductive
absorption peak
photo
conductive adhesive
Prior art date
Application number
KR1020167018337A
Other languages
Korean (ko)
Other versions
KR102397500B1 (en
Inventor
게이스께 이나세
Original Assignee
데쿠세리아루즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 데쿠세리아루즈 가부시키가이샤 filed Critical 데쿠세리아루즈 가부시키가이샤
Publication of KR20160130977A publication Critical patent/KR20160130977A/en
Application granted granted Critical
Publication of KR102397500B1 publication Critical patent/KR102397500B1/en

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • G02F1/13452—Conductors connecting driver circuitry and terminals of panels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/005—Stabilisers against oxidation, heat, light, ozone
    • C09J2201/602—
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C09J2205/31—
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/30—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314—Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/28—Adhesive materials or arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544—Marks applied to semiconductor devices or parts
    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13075—Plural core members
    • H01L2224/1308—Plural core members being stacked
    • H01L2224/13082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13144—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/13001—Core members of the bump connector
    • H01L2224/13099—Material
    • H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13147—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H01L2224/1354—Coating
    • H01L2224/13599—Material
    • H01L2224/136—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/13638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/13644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/27001—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate
    • H01L2224/27003—Involving a temporary auxiliary member not forming part of the manufacturing apparatus, e.g. removable or sacrificial coating, film or substrate for holding or transferring the layer preform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2731—Manufacturing methods by local deposition of the material of the layer connector in liquid form
    • H01L2224/2732—Screen printing, i.e. using a stencil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/273—Manufacturing methods by local deposition of the material of the layer connector
    • H01L2224/2733—Manufacturing methods by local deposition of the material of the layer connector in solid form
    • H01L2224/27334—Manufacturing methods by local deposition of the material of the layer connector in solid form using preformed layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29075—Plural core members
    • H01L2224/2908—Plural core members being stacked
    • H01L2224/29082—Two-layer arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29316—Lead [Pb] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29324—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29357—Cobalt [Co] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/2936—Iron [Fe] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29371—Chromium [Cr] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29386—Base material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/29387—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/2939—Base material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/29393—Base material with a principal constituent of the material being a solid not provided for in groups H01L2224/293 - H01L2224/29391, e.g. allotropes of carbon, fullerene, graphite, carbon-nanotubes, diamond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29399—Coating material
    • H01L2224/294—Coating material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29499—Shape or distribution of the fillers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/75251—Means for applying energy, e.g. heating means in the lower part of the bonding apparatus, e.g. in the apparatus chuck
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
    • H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
    • H01L2224/7525—Means for applying energy, e.g. heating means
    • H01L2224/753—Means for applying energy, e.g. heating means by means of pressure
    • H01L2224/75301—Bonding head
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H01L2224/81121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/8113—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/8112—Aligning
    • H01L2224/81121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/81132—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/819—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector with the bump connector not providing any mechanical bonding
    • H01L2224/81901—Pressing the bump connector against the bonding areas by means of another connector
    • H01L2224/81903—Pressing the bump connector against the bonding areas by means of another connector by means of a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/8313—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8312—Aligning
    • H01L2224/83121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
    • H01L2224/83132—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors using marks formed outside the semiconductor or solid-state body, i.e. "off-chip"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/83399—Material
    • H01L2224/83486—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2224/83488—Glasses, e.g. amorphous oxides, nitrides or fluorides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H01L2224/83874—Ultraviolet [UV] curing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
    • H01L24/75—Apparatus for connecting with bump connectors or layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3511—Warping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/38—Effects and problems related to the device integration
    • H01L2924/381—Pitch distance

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Mathematical Physics (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
  • Conductive Materials (AREA)
  • Liquid Crystal (AREA)
  • Adhesive Tapes (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

광 경화형의 접착제를 사용함으로써, 저온에서 전자 부품의 접속을 실시함과 함께, 전자 부품의 접속 불량을 개선한다. 박리 기재에 지지된 바인더 수지층을 갖고, 바인더 수지층은, 광 중합성 화합물과, 광 중합 개시제와, 광 흡수제와, 도전성 입자를 함유하고, 광 흡수제의 광 흡수 피크 파장은 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어져 있다.By using a photo-curable adhesive, the electronic parts are connected at a low temperature and the connection failure of the electronic parts is improved. And a binder resin layer supported on the peeling base material, wherein the binder resin layer contains a photopolymerizable compound, a photopolymerization initiator, a light absorber, and conductive particles, wherein a light absorption peak wavelength of the light absorbent contains light of a photopolymerization initiator Is larger than the absorption peak wavelength, and is separated by 20 nm or more.

Description

이방성 도전 접착제, 접속체의 제조 방법 및 전자 부품의 접속 방법{ANISOTROPIC CONDUCTIVE ADHESIVE, METHOD FOR PRODUCING CONNECTOR AND METHOD FOR CONNECTING ELECTRONIC COMPONENT}TECHNICAL FIELD [0001] The present invention relates to an anisotropic conductive adhesive, a method of manufacturing a connection member, and a connection method of an electronic part. [0002] An anisotropic conductive adhesive,

본 발명은 광 중합성 화합물과, 광 중합 개시제와, 광 흡수제를 함유한 이방성 도전 접착제, 이것을 사용한 접속체의 제조 방법, 및 전자 부품의 접속 방법에 관한 것이다. 본 출원은, 일본에서 2014년 3월 11일에 출원된 일본 특허출원번호 특원 2014-047585호를 기초로 하여 우선권을 주장하는 것이고, 이 출원은 참조에 의해 본 출원에 원용된다.TECHNICAL FIELD The present invention relates to a photopolymerizable compound, a photopolymerization initiator, an anisotropic conductive adhesive containing a light absorber, a method of producing a connector using the same, and a method of connecting electronic components. The present application claims priority based on Japanese Patent Application No. 2014-047585, filed on March 11, 2014, which application is hereby incorporated by reference.

종래부터 텔레비전이나 PC 모니터, 스마트폰, 휴대형 게임기, 디지털 오디오 플레이어, 타블렛 PC, 웨어러블 단말 또는 차재(車載)용 모니터 등의 각종 표시 수단 또는 표시 입력 수단으로서, 액정 표시 장치나 터치 패널 장치가 많이 사용되고 있다. 최근, 이러한 표시 장치나 터치 패널 장치에 있어서는, 파인피치화, 경량박형화 등의 관점에서 IC 칩을 직접 기판 상에 실장하는 이른바 COG (chip on glass) 나, 각종 회로가 형성된 플렉시블 기판을 직접 기판 상에 실장하는 이른바 FOG (film on glass) 가 채용되고 있다.Conventionally, a liquid crystal display device or a touch panel device is widely used as various display means or display input means such as a television, a PC monitor, a smart phone, a portable game machine, a digital audio player, a tablet PC, a wearable terminal or a vehicle- have. In recent years, in such display devices and touch panel devices, a so-called COG (chip on glass) in which an IC chip is mounted directly on a substrate from the viewpoint of fine pitching, light weight thinning, and the like, Called FOG (film on glass) is used.

예를 들어 COG 실장 방식이 채용된 액정 표시 장치 (100) 는, 도 7 에 나타내는 바와 같이, 액정 표시를 위한 주기능을 하는 액정 표시 패널 (104) 을 갖고 있고, 이 액정 표시 패널 (104) 은, 유리 기판 등으로 이루어지는 서로 대향하는 2장의 투명 기판 (102, 103) 을 갖고 있다. 그리고, 액정 표시 패널 (104) 은, 이들 양 투명 기판 (102, 103) 이 프레임형상의 시일 (105) 에 의해 서로 첩합(貼合)되어 있음과 함께, 양 투명 기판 (102, 103) 및 시일 (105) 에 의해 둘러싸인 공간 안에 액정 (106) 이 봉입된 패널 표시부 (107) 가 형성되어 있다.For example, as shown in Fig. 7, the liquid crystal display 100 employing the COG mounting method has a liquid crystal display panel 104 serving as a main function for liquid crystal display, and the liquid crystal display panel 104 And two transparent substrates 102 and 103 opposed to each other and made of a glass substrate or the like. The liquid crystal display panel 104 is configured such that both of the transparent substrates 102 and 103 are bonded to each other by a frame-shaped seal 105, A panel display portion 107 in which the liquid crystal 106 is sealed is formed in a space surrounded by the panel display portion 105.

투명 기판 (102, 103) 은, 서로 대향하는 양 내측 표면에, ITO (산화인듐주석) 등으로 이루어지는 줄무늬형상의 한 쌍의 투명 전극 (108, 109) 이 서로 교차하도록 형성되어 있다. 그리고, 양 투명 기판 (102, 103) 은, 이들 양 투명 전극 (108, 109) 의 당해 교차 부위에 의해 액정 표시의 최소 단위로서의 화소가 구성되도록 되어 있다.The transparent substrates 102 and 103 are formed so that a pair of striped transparent electrodes 108 and 109 made of ITO (indium tin oxide) or the like cross each other on both inner surfaces facing each other. Pixels serving as the minimum unit of liquid crystal display are constituted by the intersecting portions of both the transparent electrodes 108 and 109 in both of the transparent substrates 102 and 103.

양 투명 기판 (102, 103) 중, 일방의 투명 기판 (103) 은 타방의 투명 기판 (102) 보다 평면 치수가 크게 형성되어 있고, 이 크게 형성된 투명 기판 (103) 의 가장자리부 (103a) 에는, 투명 전극 (109) 의 단자부 (109a) 가 형성되어 있다. 또한, 양 투명 전극 (108, 109) 상에는, 소정의 러빙 처리가 실시된 배향막 (111, 112) 이 형성되어 있고, 이 배향막 (111, 112) 에 의해 액정 분자의 초기 배향이 규제되도록 되어 있다. 그리고, 양 투명 전극 (108, 109) 의 외측에는 한 쌍의 편광판 (118, 119) 이 배치되어 있고, 이들 양 편광판 (118, 119) 에 의해서 백라이트 등의 광원 (120) 으로부터의 투과광의 진동 방향이 규제되도록 되어 있다.One of the two transparent substrates 102 and 103 has a planar dimension larger than that of the other transparent substrate 102. In the edge 103a of the transparent substrate 103, A terminal portion 109a of the transparent electrode 109 is formed. Alignment films 111 and 112 subjected to a predetermined rubbing treatment are formed on both the transparent electrodes 108 and 109 and the initial alignment of the liquid crystal molecules is regulated by the alignment films 111 and 112. A pair of polarizers 118 and 119 are disposed outside the transparent electrodes 108 and 109. The polarization directions of the transmitted light from the light source 120 such as a backlight Is regulated.

단자부 (109a) 상에는, 이방성 도전 필름 (114) 을 사이에 두고 액정 구동용 IC (115) 가 열 압착되어 있다. 이방성 도전 필름 (114) 은, 열 경화형의 바인더 수지에 도전성 입자를 혼합해 넣고 필름상으로 한 것으로, 2개의 도체 사이에서 가열 압착됨으로써 도전 입자에 의해 도체 사이의 전기적 도통이 취해지고, 바인더 수지로 도체 사이의 기계적 접속이 유지된다. 액정 구동용 IC (115) 는, 화소에 대하여 액정 구동 전압을 선택적으로 인가함으로써, 액정의 배향을 부분적으로 변화시켜 소정의 액정 표시를 실시할 수 있게 되어 있다. 또, 이방성 도전 필름 (114) 을 구성하는 접착제로는, 통상적으로 가장 신뢰성이 높은 열 경화성의 접착제를 사용하도록 되어 있다.On the terminal portion 109a, the liquid crystal driving IC 115 is thermally bonded with the anisotropic conductive film 114 sandwiched therebetween. The anisotropic conductive film 114 is formed by mixing electrically conductive particles in a thermosetting binder resin and forming the film into a film. The anisotropic conductive film 114 is heated and pressed between two conductors so that electrical conduction between the conductors is obtained by the conductive particles, Mechanical connections between conductors are maintained. The liquid crystal driving IC 115 can selectively perform liquid crystal display by partially changing the orientation of the liquid crystal by selectively applying a liquid crystal driving voltage to the pixels. As the adhesive constituting the anisotropic conductive film 114, a thermosetting adhesive which is usually the most reliable is used.

이러한 이방성 도전 필름 (114) 을 통해서 액정 구동용 IC (115) 를 단자부 (109a) 로 접속하는 경우에는, 먼저, 투명 전극 (109) 의 단자부 (109a) 상에 이방성 도전 필름 (114) 을 도시하지 않은 가(假)압착 수단에 의해서 가압착한다. 계속해서, 이방성 도전 필름 (114) 상에 액정 구동용 IC (115) 를 재치(載置)한 후, 도 8에 나타내는 바와 같이 열 압착 헤드 등의 열 압착 수단 (121) 에 의해 액정 구동용 IC (115) 를 이방성 도전 필름 (114) 과 함께 단자부 (109a) 측으로 압압(押壓)하면서 열 압착 수단 (121) 을 발열시킨다. 이 열 압착 수단 (121) 에 의한 발열에 의해서 이방성 도전 필름 (114) 은 열 경화 반응을 일으키고, 이로써, 이방성 도전 필름 (114) 을 통해서 액정 구동용 IC (115) 가 단자부 (109a) 상에 접착된다.When the liquid crystal driving IC 115 is connected to the terminal portion 109a through the anisotropic conductive film 114, an anisotropic conductive film 114 is firstly formed on the terminal portion 109a of the transparent electrode 109 It is pressurized by an unshrinkable pressing means. Subsequently, after the liquid crystal driving IC 115 is mounted on the anisotropic conductive film 114, as shown in Fig. 8, the liquid crystal driving IC 121 is thermocompression- (115) is pressed together with the anisotropic conductive film (114) to the terminal portion (109a) side to heat the thermocompression means (121). The anisotropic conductive film 114 causes a thermosetting reaction by the heat generated by the thermocompression means 121 so that the liquid crystal driving IC 115 is bonded to the terminal portion 109a through the anisotropic conductive film 114 do.

그러나, 이러한 이방성 도전 필름을 사용한 접속 방법에 있어서는, 열가압 온도가 높아, 액정 구동용 IC (115) 등의 전자 부품이나 투명 기판 (103) 에 대한 열 충격이 커진다. 이에 추가하여, 이방성 도전 필름이 접속된 후, 상온까지 온도가 저하될 때, 그 열 압착 수단 (121) 과 맞닿는 전자 부품과 투명 기판 (103) 의 온도 차에서 기인하여, 투명 기판 (103) 의 단자부 (109a) 에 휨이 발생할 수 있다. 그 때문에, 단자부 (109a) 주변의 액정 화면에 발생하는 표시 불균일이나 액정 구동용 IC (115) 의 접속 불량 등의 문제를 야기할 우려가 있었다. 이 경향은, 투명 기판 (103) 의 협(狹)프레임화나 유리의 박형화에 수반하여 현저하게 나타난다.However, in the connection method using such an anisotropic conductive film, since the heat pressing temperature is high, thermal shock to the electronic parts such as the liquid crystal driving IC 115 and the transparent substrate 103 becomes large. In addition, when the temperature is lowered to room temperature after the anisotropic conductive film is connected, the temperature of the transparent substrate 103 is lowered due to the difference in temperature between the electronic component and the transparent substrate 103, Warpage may occur in the terminal portion 109a. This may cause problems such as display unevenness occurring on the liquid crystal screen around the terminal portion 109a and connection failure of the liquid crystal driving IC 115, and the like. This tendency is conspicuous along with the narrow frame of the transparent substrate 103 and the thinning of the glass.

특허문헌 1 : 일본 공개특허공보 2008-252098호Patent Document 1: JP-A-2008-252098

그래서, 이러한 열 경화형의 접착제를 사용한 이방성 도전 필름 (114) 을 대신하여 자외선 경화형의 접착제를 사용한 접속 방법도 제안되어 있다. 자외선 경화형의 접착제를 사용하는 접속 방법에 있어서는, 열 압착 수단을 사용하지 않고, 상온에서 액정 구동용 IC (115) 등의 전자 부품을 압압하고, 투명 기판 (103) 의 뒷편에서부터 자외선을 조사함으로써 바인더 수지를 경화시킨다. 이 때문에, 전자 부품이나 투명 기판의 가열 온도 차에서 기인하는 투명 기판 (103) 이나 액정 구동용 IC (115) 의 휨을 방지할 수 있다.Thus, a connection method using an ultraviolet curing type adhesive instead of the anisotropic conductive film 114 using such a thermosetting adhesive has been proposed. In the connection method using an ultraviolet curing type adhesive, an electronic component such as a liquid crystal driving IC 115 is pressed at room temperature without using a thermocompression means, and ultraviolet rays are irradiated from the rear side of the transparent substrate 103, The resin is cured. Therefore, warpage of the transparent substrate 103 and the liquid crystal driving IC 115 caused by the difference in heating temperature between the electronic parts and the transparent substrate can be prevented.

그러나, 자외선 경화형의 접착제를 사용하는 접속 방법에 있어서도, 바인더 수지의 점도가 높은 상태에서 가압하면, 도전성 입자를 충분히 밀어 넣을 수 없고, 접속 초기에 있어서는 양호한 접속 저항이라도, 접속 후에 있어서의 경시적, 환경적 요인에 의해 도통 저항이 상승할 우려가 있다.However, even in the connection method using an ultraviolet curing type adhesive, when the viscosity of the binder resin is high, the conductive particles can not be sufficiently pushed in, and even in the early stage of connection, The conductive resistance may rise due to environmental factors.

본 발명은 상기 서술한 과제를 해결하는 것으로, 광 경화형의 접착제를 사용함으로써, 저온에서 전자 부품의 접속을 실시하는 동시에, 전자 부품의 접속 불량을 개선하는 이방성 도전 접착제, 접속체의 제조 방법 및 전자 부품의 접속 방법을 제공하는 것을 목적으로 한다.An object of the present invention is to provide an anisotropic conductive adhesive which improves the connection failure of an electronic component by using a photo-curable adhesive, And a method of connecting parts.

상기 서술한 과제를 해결하기 위해서, 본 발명에 관련된 이방성 도전 접착제는, 광 중합성 화합물과, 광 중합 개시제와, 광 흡수제를 함유하고, 상기 광 흡수제의 광 흡수 피크 파장은 상기 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어져 있는 것이다.In order to solve the above-mentioned problems, the anisotropic conductive adhesive according to the present invention contains a photopolymerizable compound, a photopolymerization initiator, and a light absorber, wherein the light absorption peak wavelength of the light absorber is Is larger than the absorption peak wavelength, and is 20 nm or more apart.

또한, 본 발명에 관련된 접속체의 제조 방법은, 스테이지 상에 재치된 투명 기판 상에, 광 경화계 이방성 도전 접착제를 사이에 두고 전자 부품을 배치하고, 압착 툴에 의해 상기 전자 부품을 상기 투명 기판으로 압압하면서, 광 조사기로부터 광 조사를 실시하는 접속체의 제조 방법에 있어서, 상기 광 경화계 이방성 도전 접착제는, 광 중합성 화합물과, 광 중합 개시제와, 광 흡수제를 함유하고, 상기 광 흡수제의 광 흡수 피크 파장은 상기 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어지고, 상기 광 조사기는, 상기 광 중합 개시제의 광 흡수 피크 및 상기 광 흡수제의 광 흡수 피크를 포함하는 파장의 광을 조사하는 것이다.In addition, a method of manufacturing a connector according to the present invention is a method of manufacturing a connector, in which an electronic component is disposed on a transparent substrate placed on a stage with a photocurable anisotropic conductive adhesive interposed therebetween, , Wherein the photo-curing anisotropic conductive adhesive contains a photo-polymerizable compound, a photo-polymerization initiator, and a photo-absorbent, and the photo-curable anisotropic conductive adhesive contains a photo- The light absorption peak wavelength is larger than the light absorption peak wavelength of the photopolymerization initiator and is further reduced by 20 nm or more, and the light irradiation apparatus has light of a wavelength including the light absorption peak of the photopolymerization initiator and the light absorption peak of the light absorption agent .

또한, 본 발명에 관련된 전자 부품의 접속 방법은, 스테이지 상에 재치된 투명 기판 상에, 광 경화계 이방성 도전 접착제를 사이에 두고 전자 부품을 배치하고, 압착 툴에 의해 상기 전자 부품을 상기 투명 기판으로 압압하면서, 광 조사기로부터 광 조사를 실시하는 전자 부품의 접속 방법에 있어서, 상기 광 경화계 이방성 도전 접착제는, 광 중합성 화합물과, 광 중합 개시제와, 광흡 수제를 함유하고, 상기 광 흡수제의 광 흡수 피크 파장은 상기 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어지고, 상기 광 조사기는, 상기 광 중합 개시제의 광 흡수 피크 및 상기 광 흡수제의 광 흡수 피크를 포함하는 파장의 광을 조사하는 것이다.Further, in a method of connecting an electronic component according to the present invention, an electronic component is disposed on a transparent substrate placed on a stage with a photocurable anisotropic conductive adhesive interposed therebetween, , Wherein the photo-curing anisotropic conductive adhesive contains a photo-polymerizable compound, a photo-polymerization initiator, and a photo-sensitizer, wherein the photo-curable anisotropic conductive adhesive contains a photo- The light absorption peak wavelength is larger than the light absorption peak wavelength of the photopolymerization initiator and is further reduced by 20 nm or more, and the light irradiation apparatus has light of a wavelength including the light absorption peak of the photopolymerization initiator and the light absorption peak of the light absorption agent .

본 발명에 의하면, 이방성 도전 접착제로서, 광 중합 개시제 및 광 흡수제로서 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 20㎚ 이상 큰 것을 사용한다. 이로써, 광 중합 개시제와 광 흡수제의 각 자외선 흡수를 서로 저해하지 않고서, 각각 바인더 수지의 경화 반응의 진행과, 발열에 의한 바인더 수지의 용융을 실시할 수 있다. 따라서, 양호한 접속성을 갖는 접속체를 제조할 수 있다.According to the present invention, as the anisotropic conductive adhesive, a material having a light absorption peak wavelength of the light absorbing agent as a photopolymerization initiator and a light absorbing agent larger than the light absorption peak wavelength of the photopolymerization initiator by 20 nm or more is used. This makes it possible to proceed the curing reaction of the binder resin and to melt the binder resin by heat generation without inhibiting the ultraviolet absorption of the photo polymerization initiator and the light absorbent from each other. Thus, it is possible to manufacture a connector having good connectivity.

도 1 은, 접속체의 일례로서 나타내는 액정 표시 패널의 단면도이다.
도 2 는, 액정 구동용 IC 와 투명 기판의 접속 공정을 나타내는 단면도이다.
도 3 은, 이방성 도전 필름을 나타내는 단면도이다.
도 4 는, 본 발명에 관련된 이방성 도전 필름의 광 중합 개시제와 광 흡수제의 광 흡수 피크 파장의 관계를 나타내는 그래프이다.
도 5 는, 실시예 및 비교예에 관련된 접속체 샘플의 휨량을 측정하는 공정을 나타내는 측면도이다.
도 6 은, 실시예 및 비교예에 관련된 접속체 샘플의 접속 저항을 측정하는 공정을 나타내는 사시도이다.
도 7 은, 액정 표시 패널의 단면도이다.
도 8 은, 액정 표시 패널의 투명 기판에 IC 칩을 접속하는 공정을 나타내는 단면도이다.1 is a sectional view of a liquid crystal display panel shown as an example of a connector.
Fig. 2 is a cross-sectional view showing a connection process of a liquid crystal driving IC and a transparent substrate.
3 is a cross-sectional view showing an anisotropic conductive film.
4 is a graph showing the relationship between the light absorption peak wavelength of the photo-polymerization initiator of the anisotropic conductive film according to the present invention and the light absorbing agent.
Fig. 5 is a side view showing a step of measuring the amount of warpage of a connector sample according to the embodiment and the comparative example. Fig.
Fig. 6 is a perspective view showing a step of measuring connection resistances of the connector samples according to the examples and the comparative examples. Fig.
7 is a cross-sectional view of the liquid crystal display panel.
8 is a cross-sectional view showing a step of connecting an IC chip to a transparent substrate of a liquid crystal display panel.

이하, 본 발명이 적용된 이방성 도전 접착제, 접속체의 제조 방법 및 전자 부품의 접속 방법에 관해서, 도면을 참조하면서 상세히 설명한다. 또, 본 발명은 이하의 실시형태만으로 한정되는 것이 아니라, 본 발명의 요지를 일탈하지 않는 범위 내에서 여러 가지 변경이 가능함은 물론이다. 또한, 도면은 모식적인 것으로, 각 치수의 비율 등은 현실과는 다른 경우가 있다. 구체적인 치수 등은 이하의 설명을 참작하여 판단해야 할 것이다. 또한, 도면 상호간에 있어서도 서로의 치수 관계나 비율이 다른 부분이 포함되어 있음은 물론이다.BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an anisotropic conductive adhesive to which the present invention is applied, a method of manufacturing a connection member, and a connection method of electronic components will be described in detail with reference to the drawings. It is needless to say that the present invention is not limited to the following embodiments, but may be modified in various ways within the scope not departing from the gist of the present invention. In addition, the drawings are schematic, and the ratios of the dimensions and the like may be different from reality. The specific dimensions and the like should be judged based on the following description. Needless to say, the drawings also include portions having different dimensional relationships or ratios with each other.

이하에서는, 액정 표시 패널의 유리 기판에, 전자 부품으로서 액정 구동용의 IC 칩을 실장하는 이른바 COG (chip on glass) 실장을 실시하는 경우를 예로 설명한다. 이 액정 표시 패널 (10) 은, 도 1 에 나타내는 바와 같이, 유리 기판 등으로 이루어지는 2장의 투명 기판 (11, 12) 이 대향 배치되고, 이들 투명 기판 (11, 12) 이 프레임형상의 시일 (13) 에 의해서 서로 첩합되어 있다. 그리고, 액정 표시 패널 (10) 은, 투명 기판 (11, 12) 에 의해 둘러싸인 공간 내에 액정 (14) 이 봉입됨으로써 패널 표시부 (15) 가 형성되어 있다.Hereinafter, a case in which so-called COG (chip on glass) mounting in which an IC chip for driving a liquid crystal is mounted as an electronic component on a glass substrate of a liquid crystal display panel is described as an example. 1, two liquid crystal display panels 10 are arranged so that two transparent substrates 11 and 12 made of a glass substrate or the like are opposed to each other and these transparent substrates 11 and 12 are sealed with a frame- ). In the liquid crystal display panel 10, the liquid crystal 14 is sealed in a space surrounded by the transparent substrates 11 and 12 to form the panel display portion 15. [

투명 기판 (11, 12) 은, 서로 대향하는 양 내측 표면에, ITO (산화인듐주석) 등으로 이루어지는 줄무늬형상의 한 쌍의 투명 전극 (16, 17) 이 서로 교차하도록 형성되어 있다. 그리고, 양 투명 전극 (16, 17) 은, 이들 양 투명 전극 (16, 17) 의 당해 교차 부위에 의해서 액정 표시의 최소 단위로서의 화소가 구성되도록 되어 있다.The transparent substrates 11 and 12 are formed such that a pair of striped transparent electrodes 16 and 17 made of ITO (indium tin oxide) or the like cross each other on both inner surfaces opposed to each other. The two transparent electrodes 16 and 17 are arranged such that the intersection of the transparent electrodes 16 and 17 forms a pixel as a minimum unit of liquid crystal display.

양 투명 기판 (11, 12) 중 일방의 투명 기판 (12) 은 타방의 투명 기판 (11) 보다 평면 치수가 크게 형성되어 있고, 이 크게 형성된 투명 기판 (12) 의 가장자리부 (12a) 에는, 전자 부품으로서 액정 구동용 IC (18) 가 실장되는 COG 실장부 (20) 가 형성되고, 또한 COG 실장부 (20) 의 외측 근방에는, 전자 부품으로서 액정 구동 회로가 형성된 플렉시블 기판 (21) 이 실장되는 FOG 실장부 (22) 가 형성되어 있다. 또, COG 실장부 (20) 에는, 투명 전극 (17) 의 단자부 (17a), 및 액정 구동용 IC (18) 에 형성된 IC 측 얼라인먼트 마크 (24) 와 중첩시키는 기판측 얼라인먼트 마크 (23) 가 형성되어 있다.One of the transparent substrates 12 of the two transparent substrates 11 and 12 is formed to have a larger planar dimension than the other transparent substrate 11. The edge 12a of the transparent substrate 12, A COG mounting portion 20 in which a liquid crystal driving IC 18 is mounted as a component is formed and a flexible substrate 21 on which a liquid crystal driving circuit is formed as an electronic component is mounted in the vicinity of the outside of the COG mounting portion 20 The FOG mounting portion 22 is formed. The substrate side alignment mark 23 to be superimposed on the terminal portion 17a of the transparent electrode 17 and the IC side alignment mark 24 formed on the liquid crystal driving IC 18 is formed in the COG mounting portion 20 .

또, 액정 구동용 IC (18) 는, 화소에 대하여 액정 구동 전압을 선택적으로 인가함으로써 액정의 배향을 부분적으로 변화시켜 소정의 액정 표시를 할 수 있도록 되어 있다. 또한, 도 2 에 나타내는 바와 같이, 액정 구동용 IC (18) 는, 이방성 도전 필름 (1) 을 통해서 투명 전극 (17) 의 단자부 (17a) 와 도통 접속되는 전극 단자 (19) 가 형성되어 있다. 전극 단자 (19) 는, 예를 들어 구리 범프나 금 범프, 또는 구리 범프에 금 도금을 실시한 것 등이 바람직하게 사용된다.In addition, the liquid crystal driving IC 18 is capable of performing predetermined liquid crystal display by partially changing the orientation of the liquid crystal by selectively applying a liquid crystal driving voltage to the pixels. 2, the liquid crystal driving IC 18 is provided with an electrode terminal 19 connected to the terminal portion 17a of the transparent electrode 17 through the anisotropic conductive film 1. The electrode terminal 19 is preferably made of, for example, a copper bump, a gold bump, or a gold-plated copper bump.

또한, 액정 구동용 IC (18) 는, 실장면 (18a) 에, 기판측 얼라인먼트 마크 (23) 와 중첩시킴으로써 투명 기판 (12) 에 대한 얼라인먼트를 실시하는 IC 측 얼라인먼트 마크 (24) 가 형성되어 있다. 또, 투명 기판 (12) 의 투명 전극 (17) 의 배선 피치나 액정 구동용 IC (18) 의 전극 단자 (19) 의 파인피치화가 진행되고 있는 점에서, 액정 구동용 IC (18) 과 투명 기판 (12) 은, 고정밀도의 얼라인먼트 조정이 요구되고 있다.The liquid crystal driving IC 18 is formed with an IC side alignment mark 24 for performing alignment with respect to the transparent substrate 12 by superimposing the substrate side alignment mark 23 on the mounting surface 18a . It is to be noted that the wiring pitch of the transparent electrodes 17 of the transparent substrate 12 and the fine pitch of the electrode terminals 19 of the liquid crystal driving IC 18 are progressing, (12) requires high-precision alignment adjustment.

각 실장부 (20, 22) 에는, 투명 전극 (17) 의 단자부 (17a) 가 형성되어 있다. 단자부 (17a) 상에는, 광 중합 개시제를 함유하는 회로 접속용 접착제로서 이방성 도전 필름 (1) 을 사용하여 액정 구동용 IC (18) 나 플렉시블 기판 (21) 이 접속된다. 이방성 도전 필름 (1) 은 도전성 입자 (4) 를 함유하고 있어, 액정 구동용 IC (18) 나 플렉시블 기판 (21) 의 전극과 투명 기판 (12) 의 가장자리부 (12a) 에 형성된 투명 전극 (17) 의 단자부 (17a) 를, 도전성 입자 (4) 를 통해서 전기적으로 접속시키는 것이다. 이 이방성 도전 필름 (1) 은 자외선 경화형의 접착제로, 후술하는 자외선 조사기 (35) 에 의해 자외선이 조사됨과 함께 압착 헤드 (33) 에 의해 압압됨으로써, 유동화되어 도전성 입자 (4) 가 단자부 (17a) 와 액정 구동용 IC (18) 나 플렉시블 기판 (21) 의 각 전극과의 사이에서 눌려서 찌부러지고, 도전성 입자 (4) 가 눌려 찌부러든 상태로 경화된다. 이로써, 이방성 도전 필름 (1) 은, 투명 기판 (12) 과 액정 구동용 IC (18) 나 플렉시블 기판 (21) 을 전기적, 기계적으로 접속한다.A terminal portion 17a of the transparent electrode 17 is formed in each of the mounting portions 20 and 22. On the terminal portion 17a, the liquid crystal driving IC 18 and the flexible substrate 21 are connected by using the anisotropic conductive film 1 as a circuit connecting adhesive containing a photo polymerization initiator. The anisotropic conductive film 1 contains the conductive particles 4 and the transparent electrodes 17 formed on the edge portions 12a of the transparent substrate 12 and the electrodes of the liquid crystal driving IC 18 and the flexible substrate 21 The conductive particles 4 are electrically connected to the terminal portions 17a. This anisotropic conductive film 1 is an ultraviolet curing type adhesive and ultraviolet rays are irradiated by an ultraviolet ray irradiator 35 described later and pressed by the compression head 33 to fluidize the conductive particles 4 into the terminal portions 17a, The liquid crystal driving IC 18 and the flexible substrate 21, and the conductive particles 4 are pressed and cured in a state of being crushed. As a result, the anisotropic conductive film 1 electrically and mechanically connects the transparent substrate 12 to the liquid crystal driving IC 18 and the flexible substrate 21.

또한, 양 투명 전극 (16, 17) 상에는, 소정의 러빙 처리가 실시된 배향막 (24) 이 형성되어 있고, 이 배향막 (24) 에 의해서 액정 분자의 초기 배향이 규제되도록 되어 있다. 그리고, 양 투명 기판 (11, 12) 의 외측에는 한 쌍의 편광판 (25, 26) 이 배치되어 있고, 이들 양 편광판 (25, 26) 에 의해서 백라이트 등의 광원 (도시 생략) 으로부터의 투과광의 진동 방향이 규제되도록 되어 있다.An alignment film 24 subjected to a predetermined rubbing treatment is formed on both of the transparent electrodes 16 and 17 so that the initial alignment of the liquid crystal molecules is regulated by the alignment film 24. [ A pair of polarizers 25 and 26 are disposed outside the transparent substrates 11 and 12 and the polarizers 25 and 26 are used to transmit the light transmitted from a light source such as a backlight The direction is regulated.

[광 경화계 이방성 도전 필름][Photocurable anisotropic conductive film]

본 발명에서는, 광 경화계의 이방성 도전 필름 (ACF : Anisotropic Conductive Film) (1) 이 사용된다. 이방성 도전 필름 (1) 은 광 카티온계 또는 광 라디칼계 중 어느 것이어도 되고, 목적에 따라서 적절히 선택할 수 있다.In the present invention, an optically curing anisotropic conductive film (ACF: Anisotropic Conductive Film) 1 is used. The anisotropic conductive film 1 may be either a light cationic system or a light radical system, and may be appropriately selected in accordance with the purpose.

이방성 도전 필름 (1) 은, 도 3 에 나타내는 바와 같이, 기재가 되는 박리 필름 (2) 상에 도전성 입자 (4) 를 함유하는 바인더 수지층 (접착제층) (3) 이 형성된 것이다. 이방성 도전 필름 (1) 은, 도 2 에 나타내는 바와 같이, 액정 표시 패널 (10) 의 투명 기판 (12) 에 형성된 투명 전극 (17) 의 단자부 (17a) 와 액정 구동용 IC (18) 의 전극 단자 (19) 사이에 바인더 수지층 (3) 을 개재시킴으로써, 액정 표시 패널 (10) 과 액정 구동용 IC (18) 를 접속하고, 도통시킨다.The anisotropic conductive film 1 is formed with a binder resin layer (adhesive layer) 3 containing conductive particles 4 on a release film 2 as a base as shown in Fig. 2, the anisotropic conductive film 1 is electrically connected to the terminal portion 17a of the transparent electrode 17 formed on the transparent substrate 12 of the liquid crystal display panel 10 and the electrode terminal 17a of the liquid crystal driving IC 18 The liquid crystal display panel 10 and the liquid crystal driving IC 18 are connected and made conductive by interposing the binder resin layer 3 between the liquid crystal display panel 19 and the liquid crystal display panel 10.

박리 필름 (2) 으로는, 이방성 도전 필름에 있어서 일반적으로 사용되고 있는, 예를 들어 폴리에틸렌테레프탈레이트 필름 등의 기재를 사용할 수 있다.As the release film 2, for example, a substrate such as a polyethylene terephthalate film generally used in an anisotropic conductive film can be used.

이방성 도전 필름 (1) 은, 바인더 수지층 (3) 중에 막형성 수지, 광 중합 개시제, 광 중합성 화합물, 광 흡수제 및 도전성 입자 (4) 를 함유한다. 이방성 도전 필름 (1) 은 광 흡수제를 함유함으로써, 후술하는 액정 구동용 IC (18) 의 접속 공정에 있어서, 광 흡수제가 자외선 조사에 의해 발열하여, 바인더 수지를 연화시킨다. 이로써, 이방성 도전 필름 (1) 은, 압착 헤드 (33) 에 의해서 도전성 입자 (4) 를 단자부 (17a) 와 전극 단자 (19) 사이에서 충분히 밀어 넣을 수 있다. 광 흡수제의 발열 온도는, 도전성 입자 (4) 를 밀어 넣기에 충분한 정도로 바인더 수지를 연화시킴과 함께, 투명 기판 (11, 12) 이나 액정 구동용 IC (18) 에 대하여 열 충격의 영향도 없는 소정의 온도, 예를 들어 80∼90℃ 정도가 바람직하며, 광 흡수제의 재료 선택에 의해서 적절히 설정할 수 있다.The anisotropic conductive film 1 contains a film forming resin, a photopolymerization initiator, a photopolymerizable compound, a light absorbent and conductive particles 4 in the binder resin layer 3. The anisotropic conductive film 1 contains a light absorbing agent, so that the light absorbing agent is heated by irradiation with ultraviolet rays to soften the binder resin in the connection step of a liquid crystal driving IC 18 to be described later. The anisotropic conductive film 1 can sufficiently push the conductive particles 4 between the terminal portions 17a and the electrode terminals 19 by the compression head 33. [ The heat generating temperature of the light absorbent softens the binder resin to a sufficient degree to push the conductive particles 4 and prevents the transparent substrates 11 and 12 and the liquid crystal driving IC 18 from being heated to a predetermined temperature For example, about 80 to 90 占 폚, and can be suitably set by selecting the material of the light absorbent.

[광 카티온계] [Guangdong Catholic]

광 카티온계의 이방성 도전 필름 (1) 은, 바인더 수지층 (3) 중에, 막형성 수지, 광 카티온 중합 개시제, 광 카티온 중합성 화합물 및 광 흡수제를 함유한다.The anisotropic conductive film 1 of the optical cationic system contains a film forming resin, a photo cationic polymerization initiator, a photo cationic polymerizable compound and a light absorbent in the binder resin layer 3.

막형성 수지로는, 평균 분자량이 10000∼80000 정도의 수지가 바람직하다. 막형성 수지로는, 페녹시 수지, 에폭시 수지, 변형 에폭시 수지, 우레탄 수지, 등의 각종 수지를 들 수 있다. 그 중에서도, 막형성 상태, 접속 신뢰성 등의 관점에서 페녹시 수지가 특히 바람직하다.As the film-forming resin, a resin having an average molecular weight of about 10,000 to 80,000 is preferable. Examples of the film-forming resin include various resins such as a phenoxy resin, an epoxy resin, a modified epoxy resin, and a urethane resin. Among them, a phenoxy resin is particularly preferable from the viewpoints of film formation state, connection reliability, and the like.

광 카티온 중합 개시제로는, 예를 들어, 요오드늄염, 술포늄염, 방향족 디아조늄염, 포스포늄염, 셀레늄염 등의 오늄염이나 금속 아렌 착물, 실라놀/알루미늄착물 등의 착물 화합물, 벤조인토실레이트, o-니트로벤질토실레이트 등을 사용할 수 있다. 또한, 염을 형성할 때의 카운터 아니온으로는, 프로필렌카보네이트, 헥사플루오로안티모네이트, 헥사플루오로포스페이트, 테트라플루오로보레이트, 테트라키스(펜타플루오로페닐)보레이트 등이 사용된다.Examples of the photocathione polymerization initiator include, for example, onium salts and metal arene complexes such as iodonium salts, sulfonium salts, aromatic diazonium salts, phosphonium salts and selenium salts, complex compounds such as silanol / aluminum complexes, Tosylate, o-nitrobenzyltosylate, and the like. As the counter anion in the formation of the salt, propylene carbonate, hexafluoroantimonate, hexafluorophosphate, tetrafluoroborate, tetrakis (pentafluorophenyl) borate and the like are used.

광 카티온 중합 개시제는, 1종만을 단독으로 사용해도 되고 2종 이상을 혼합하여 사용해도 된다. 그 중에서도, 방향족 술포늄염은 300㎚ 이상의 파장 영역에서도 자외선 흡수 특성을 가져, 경화성이 우수한 점에서 바람직하게 사용할 수 있다.The photocathione polymerization initiator may be used alone or in combination of two or more. Among them, an aromatic sulfonium salt is preferably used because it has an ultraviolet ray absorption property in a wavelength region of 300 nm or more and is excellent in curability.

광 카티온 중합성 화합물은, 카티온종에 의해서 중합하는 관능기를 갖는 화합물로, 에폭시 화합물, 비닐에테르 화합물, 환상 에테르 화합물 등을 들 수 있다.The photocathione-polymerizable compound is a compound having a functional group polymerized by a cationic species, and examples thereof include an epoxy compound, a vinyl ether compound, and a cyclic ether compound.

에폭시 화합물로는, 1 분자 중에 2개 이상의 에폭시기를 갖는 화합물로, 예를 들어, 에피클로로히드린과 비스페놀 A 나 비스페놀 F 등으로부터 유도되는 비스페놀형 에폭시 수지나, 폴리글리시딜에테르, 폴리글리시딜에스테르, 방향족 에폭시 화합물, 지환식 에폭시 화합물, 노볼락형 에폭시 화합물, 글리시딜아민계 에폭시 화합물, 글리시딜에스테르계 에폭시 화합물 등을 들 수 있다.Examples of the epoxy compound include compounds having two or more epoxy groups in one molecule, such as bisphenol-type epoxy resins derived from epichlorohydrin and bisphenol A or bisphenol F, polyglycidyl ethers, Diallyl esters, aromatic epoxy compounds, alicyclic epoxy compounds, novolak-type epoxy compounds, glycidylamine-based epoxy compounds, and glycidyl ester-based epoxy compounds.

광 흡수제는, 액정 구동용 IC (18) 의 접속 공정에 있어서 자외선이 조사됨으로써 발열하여, 바인더 수지를 용융시키는 것이다. 광 흡수제는, 광 중합 개시제로서 광 카티온 중합 개시제를 사용하는 경우에는, 예를 들어, 벤조트리아졸계, 트리아진계, 벤조페논계 등의 자외선 흡수제를 바람직하게 사용할 수 있고, 광 카티온 중합 개시제의 흡수 피크 파장이나, 자외선 조사기 (35) 의 분광 분포, 바인더 수지의 다른 성분과의 상용성, 자외선 흡수능 등에 따라서 적절히 선택된다. 또, 광 중합 개시제로서 카티온계 중합 개시제를 사용하는 경우에는, 자외선을 흡수함으로써 발열하는 광 흡수제로서, 광 라디칼 중합 개시제를 사용해도 된다.The light absorbing agent is heated by irradiation of ultraviolet rays in the connection process of the liquid crystal driving IC 18 to melt the binder resin. When a photocathode polymerization initiator is used as the photopolymerization initiator, a light absorbent such as a benzotriazole-based, triazine-based or benzophenone-based ultraviolet absorber can be preferably used. The photocatalyst polymerization initiator The absorption peak wavelength, the spectral distribution of the ultraviolet ray irradiator 35, the compatibility with other components of the binder resin, the ultraviolet absorbing ability, and the like. When a cation polymerization initiator is used as the photo polymerization initiator, a photo radical polymerization initiator may be used as a light absorbent that generates heat by absorbing ultraviolet rays.

[광 라디칼계] [Optical Radical System]

광 라디칼계의 이방성 도전 필름 (1) 은, 바인더 수지층 (3) 중에, 막형성 수지, 광 라디칼 중합 개시제, 광 라디칼 중합성 화합물 및 광 흡수제를 함유한다.The optical radical-based anisotropic conductive film (1) contains a film-forming resin, a photo-radical polymerization initiator, a photo-radical polymerizable compound and a light absorber in the binder resin layer (3).

막형성 수지로는, 광 카티온계와 동일한 것을 사용할 수 있다.As the film-forming resin, the same material as the photocathion system can be used.

광 라디칼 중합 개시제로는, 벤조인에틸에테르, 이소프로필벤조인에테르 등의 벤조인에테르, 벤질, 히드록시시클로헥실페닐케톤 등의 벤질케탈, 벤조페논, 아세토페논 등의 케톤류 및 그 유도체, 티오크산톤류, 비스이미다졸류 등이 있고, 이들 광 중합 개시제에 필요에 따라서 아민류, 황 화합물, 인 화합물 등의 증감제를 임의의 비로 첨가해도 된다. 이 때, 사용하는 광원의 파장이나 원하는 경화 특성 등에 따라서 최적의 광 개시제를 선택할 필요가 있다.Examples of the photo radical polymerization initiator include benzoin ethers such as benzoin ethyl ether and isopropyl benzoin ether, benzyl ketals such as benzyl and hydroxycyclohexyl phenyl ketone, ketones and derivatives thereof such as benzophenone and acetophenone, Acid generators, acid generators, acid generators, acid generators, acid generators, acid generators, acid generators, acid generators, acid generators, acid generators, acid generators, acid generators and acid generators. At this time, it is necessary to select an optimum photoinitiator in accordance with the wavelength of the light source to be used and the desired curing characteristics.

또한, 광 조사에 의해서 활성 라디칼을 발생하는 화합물로서 유기 과산화물계 경화제를 사용할 수 있다. 유기 과산화물로는, 디아실퍼옥사이드, 디알킬퍼옥사이드, 퍼옥시디카보네이트, 퍼옥시에스테르, 퍼옥시케탈, 하이드로퍼옥사이드, 실릴퍼옥사이드 등으로부터 1종 또는 2종 이상을 사용할 수 있다.An organic peroxide-based curing agent can be used as a compound which generates an active radical by light irradiation. As the organic peroxide, diacyl peroxide, dialkyl peroxide, peroxydicarbonate, peroxy ester, peroxyketal, hydroperoxide, silyl peroxide, etc. may be used alone or in combination of two or more.

광 라디칼 중합성 화합물은, 활성 라디칼에 의해서 중합하는 관능기를 갖는 물질로, 아크릴산에스테르 화합물, 메타크릴산에스테르 화합물, 말레이미드 화합물 등을 들 수 있다.The photo-radically polymerizable compound is a substance having a functional group which is polymerized by an active radical, and examples thereof include an acrylic acid ester compound, a methacrylic acid ester compound and a maleimide compound.

광 라디칼 중합성 화합물은, 모노머, 올리고머 중 어느 것의 상태로 사용하는 것이 가능하고, 모노머와 올리고머를 병용하는 것도 가능하다.The photo-radical polymerizable compound can be used in any of monomers and oligomers, and it is also possible to use monomers and oligomers in combination.

아크릴산에스테르 화합물, 메타크릴산에스테르 화합물로는, 에폭시아크릴레이트 올리고머, 우레탄아크릴레이트 올리고머, 폴리에테르아크릴레이트 올리고머, 폴리에스테르아크릴레이트 올리고머 등의 광 중합성 올리고머 ; 트리메틸올프로판트리아크릴레이트, 폴리에틸렌글리콜디아크릴레이트, 폴리알킬렌글리콜디아크릴레이트, 펜타에리트리톨아크릴레이트, 2-시아노에틸아크릴레이트, 시클로헥실아크릴레이트, 디시클로펜테닐아크릴레이트, 디시클로펜테닐옥시에틸아크릴레이트, 2-(2-에톡시에톡시)에틸아크릴레이트, 2-에톡시에틸아크릴레이트, 2-에틸헥실아크릴레이트, n-헥실아크릴레이트, 2-히드록시에틸아크릴레이트, 히드록시프로필아크릴레이트, 이소보르닐아크릴레이트, 이소데실아크릴레이트, 이소옥틸아크릴레이트, n-라우릴아크릴레이트, 2-메톡시에틸아크릴레이트, 2-페녹시에틸아크릴레이트, 테트라히드로푸르푸릴아크릴레이트, 네오펜틸글리콜디아크릴레이트, 디펜타에리트리톨헥사아크릴레이트 등의 광 중합성 단관능 및 다관능 아크릴레이트 모노머 등을 들 수 있다. 이들은 1종 또는 2종류 이상을 혼합하여 사용해도 된다.Examples of the acrylic acid ester compound and methacrylic acid ester compound include photopolymerizable oligomers such as epoxy acrylate oligomer, urethane acrylate oligomer, polyether acrylate oligomer and polyester acrylate oligomer; But are not limited to, trimethylolpropane triacrylate, polyethylene glycol diacrylate, polyalkylene glycol diacrylate, pentaerythritol acrylate, 2-cyanoethyl acrylate, cyclohexyl acrylate, dicyclopentenyl acrylate, dicyclopentane Acrylate, 2-ethylhexyl acrylate, n-hexyl acrylate, 2-hydroxyethyl acrylate, 2-ethylhexyl acrylate, 2-ethylhexyl acrylate, Acrylate, isobornyl acrylate, isodecyl acrylate, isooctyl acrylate, n-lauryl acrylate, 2-methoxyethyl acrylate, 2-phenoxyethyl acrylate, tetrahydrofurfuryl acrylate , Neopentyl glycol diacrylate, dipentaerythritol hexaacrylate, and other photopolymerizable monofunctional and polyfunctional acrylate mono And the like. These may be used alone or in combination of two or more.

광 흡수제는, 예를 들어, 벤조트리아졸계, 트리아진계, 벤조페논계 등의 자외선 흡수제를 바람직하게 사용할 수 있고, 광 라디칼 중합 개시제의 흡수 피크 파장이나, 자외선 조사기 (35) 의 분광 분포, 바인더 수지의 다른 성분과의 상용성, 자외선 흡수능 등에 따라서 적절히 선택된다.As the light absorbent, for example, an ultraviolet absorber such as benzotriazole, triazine or benzophenone can be preferably used, and the absorption peak wavelength of the photo radical polymerization initiator, the spectral distribution of the ultraviolet irradiator 35, Compatibility with other components of the composition, ultraviolet absorption ability, and the like.

기타, 바인더 수지는, 실란 커플링제 등의 첨가제나 무기 필러를 함유시켜도 된다. 실란 커플링제로는, 에폭시계, 아미노계, 메르캅토·술피드계, 우레이드계 등을 들 수 있다. 실란 커플링제를 첨가함으로써, 유기 재료와 무기 재료의 계면에 있어서의 접착성이 향상된다.The binder resin may contain an additive such as a silane coupling agent or an inorganic filler. Examples of the silane coupling agent include epoxy-based, amino-based, mercapto-sulfide-based, and ureide-based. By adding the silane coupling agent, the adhesion at the interface between the organic material and the inorganic material is improved.

도전성 입자 (4) 로는, 이방성 도전 필름에 있어서 사용되고 있는 공지된 어느 도전성 입자를 들 수 있다. 도전성 입자 (4) 로는, 예를 들어, 니켈, 철, 구리, 알루미늄, 주석, 납, 크롬, 코발트, 은, 금 등의 각종 금속이나 금속 합금의 입자, 금속 산화물, 카본, 그라파이트, 유리, 세라믹, 플라스틱 등의 입자의 표면에 금속을 코팅한 것, 또는, 이들 입자의 표면에 추가로 절연 박막을 코팅한 것 등을 들 수 있다. 수지 입자의 표면에 금속을 코팅한 것인 경우, 수지 입자로는, 예를 들어, 에폭시 수지, 페놀 수지, 아크릴 수지, 아크릴로니트릴·스티렌 (AS) 수지, 벤조구아나민 수지, 디비닐벤젠계 수지, 스티렌계 수지 등의 입자를 들 수 있다.As the conductive particles (4), there can be enumerated any known conductive particles used in the anisotropic conductive film. Examples of the conductive particles 4 include particles of various metals and metal alloys such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver and gold, metal oxides, carbon, graphite, , Plastics or the like coated with a metal, or a surface of these particles coated with an insulating thin film. When the surface of the resin particle is coated with a metal, examples of the resin particle include an epoxy resin, a phenol resin, an acrylic resin, an acrylonitrile · styrene (AS) resin, a benzoguanamine resin, a divinylbenzene resin Resins, and styrene-based resins.

[광 중합 개시제와 광 흡수제의 광 흡수 피크 파장][Optical absorption peak wavelength of photo-polymerization initiator and light absorber]

본 발명에 관련된 광 경화계의 이방성 도전 필름 (1) 은, 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어져 있다. 이방성 도전 필름 (1) 은, 후술하는 자외선 조사기 (35) 로부터 자외광이 조사되면, 광 중합 개시제는 자외광을 흡수하여 산이나 라디칼을 발생시킨다. 또한, 광 흡수제도 동일하게 자외광을 흡수하여, 발열한다.In the anisotropic conductive film (1) of the photocurable system relating to the present invention, the light absorption peak wavelength of the light absorbing agent is larger than the light absorption peak wavelength of the photopolymerization initiator and is 20 nm or more apart. When an ultraviolet ray is irradiated from an ultraviolet ray irradiator 35 described later, the anisotropic conductive film 1 absorbs ultraviolet light to generate an acid or a radical. In addition, the light absorbing system absorbs ultraviolet light in the same way and generates heat.

여기서, 광 중합 개시제의 광 흡수 피크와 광 흡수제의 광 흡수 피크가 근접해 있으면, 자외광의 흡수가 서로 저해되어, 경화 반응이나 발열이 불충분하게 된다. 그 결과, 바인더 수지가 용융되지 않고, 도전성 입자 (4) 의 밀어 넣기가 부족한 상태로 바인더 수지의 경화가 진행되며, 또한 접속 후의 경시 변화나 환경 변화에 의해서 도통 저항이 상승할 우려가 있다.Here, if the light absorption peak of the photo polymerization initiator is close to the light absorption peak of the light absorbent, the absorption of ultraviolet light is inhibited from each other, and the curing reaction and heat generation are insufficient. As a result, the binder resin does not melt, the binder resin hardens in a state in which the conductive particles 4 are insufficiently pushed in, and there is a fear that the continuity resistance increases due to a change with time and a change in environment after connection.

또한, 광 흡수제 및 광 중합 개시제의 각 광 흡수 피크 파장은 일반적으로 도 4 에 나타내는 프로파일을 갖는 점에서, 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 작으면, 20㎚ 이상 떨어져 있어도, 피크 이외에 있어서의 흡수 파장의 중복 범위가 커지고, 자외광의 흡수가 서로 저해되어, 경화 반응이나 발열이 불충해지기 때문이다.When the light absorption peak wavelength of the light absorbing agent is smaller than the light absorption peak wavelength of the photopolymerization initiator, it is preferable that the light absorption peak wavelength of the light absorbing agent and the photopolymerization initiator is 20 nm or more Even if they are apart from each other, the overlapping range of the absorption wavelength in the case other than the peak becomes large, and absorption of ultraviolet light is inhibited to each other, and the curing reaction and heat generation become insufficient.

한편, 광 흡수제 및 광 중합 개시제로서, 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 20㎚ 이상 큰 것을 사용함으로써, 광 중합 개시제와 광 흡수제의 각 자외선 흡수를 저해하지 않고, 각각 바인더 수지의 경화 반응의 진행과, 발열에 의한 바인더 수지의 용융을 실시할 수 있다.On the other hand, by using the light absorber and the photopolymerization initiator having the light absorption peak wavelength of the light absorption agent larger than the light absorption peak wavelength of the photopolymerization initiator by 20 nm or more, the absorption of the respective ultraviolet rays of the photo polymerization initiator and the light absorption agent is not inhibited, The curing reaction of the binder resin can be progressed and the binder resin can be melted by heat generation.

또한, 본 발명에 관련된 광 중합 개시제의 광 흡수 피크 파장은 290㎚∼330㎚ 이고, 광 흡수제의 광 흡수 피크 파장은 320㎚∼360㎚ 인 것이 바람직하다.It is preferable that the light absorption peak wavelength of the photopolymerization initiator of the present invention is 290 nm to 330 nm and the light absorption peak wavelength of the light absorbent is 320 nm to 360 nm.

예를 들어, 자외광의 흡수 피크가 310㎚ 인 광 카티온 중합 개시제를 사용하고, 자외광의 흡수 피크가 340∼360㎚ 의 자외선 흡수제를 사용함으로써, 광 카티온 중합 개시제와 자외선 흡수제가 서로 자외광의 흡수를 서로 저해하지 않고, 경화 반응이나 발열을 촉진할 수 있다.For example, by using a photo cationic polymerization initiator having an absorption peak of ultraviolet light of 310 nm and using an ultraviolet absorber having an absorption peak of ultraviolet light of 340 to 360 nm, the photo cationic polymerization initiator and the ultraviolet absorber The curing reaction and heat generation can be promoted without inhibiting the absorption of external light.

[접속 장치] [Connection device]

이어서, 이방성 도전 필름 (1) 을 통해서 액정 구동용 IC (18) 가 투명 기판 (12) 에 접속된 접속체의 제조 공정에 사용되는 접속 장치 (30) 에 대해서 설명한다.Next, the connection device 30 used in the manufacturing process of the connection member in which the liquid crystal driving IC 18 is connected to the transparent substrate 12 through the anisotropic conductive film 1 will be described.

도 1 에 나타내는 바와 같이, 접속 장치 (30) 는, 광 투과성을 갖는 스테이지 (31) 와, 스테이지 (31) 상에 재치된 투명 기판 (12) 에 이방성 도전 필름 (1) 을 사이에 두고 탑재된 액정 구동용 IC (18) 를 가압하는 압착 헤드 (33) 와, 스테이지 (31) 의 이면측에 형성된 자외선 조사기 (35) 를 갖는다.1, the connection device 30 includes a stage 31 having a light-transmitting property, and a light-shielding film 31 which is mounted on the transparent substrate 12 placed on the stage 31 with an anisotropic conductive film 1 sandwiched therebetween A pressing head 33 for pressing the liquid crystal driving IC 18 and an ultraviolet irradiator 35 formed on the back side of the stage 31. [

스테이지 (31) 는, 예를 들어 석영 등의 광 투과성을 갖는 재료에 의해 형성된다. 또한, 스테이지 (31) 는, 표면에 투명 기판 (12) 의 가장자리부 (12a) 가 재치됨과 함께, 압착 헤드 (33) 와 대치되고, 이면에는 자외선 조사기 (35) 가 배치되어 있다.The stage 31 is formed of a light-transmitting material such as quartz. The stage 31 has the edge portion 12a of the transparent substrate 12 placed on the surface thereof and is opposed to the pressing head 33 and the ultraviolet ray irradiator 35 is disposed on the back surface thereof.

압착 헤드 (33) 는, 투명 기판 (12) 에 이방성 도전 필름 (1) 을 사이에 두고 탑재된 액정 구동용 IC (18) 를 압압하는 것으로, 도시하지 않은 헤드 이동 기구에 유지됨으로써, 스테이지 (31) 에 접근, 이간이 자유롭게 되어 있다.The pressing head 33 presses the liquid crystal driving IC 18 mounted on the transparent substrate 12 with the anisotropic conductive film 1 interposed therebetween so as to be held by a head moving mechanism ), And is free to move away.

자외선 조사기 (35) 는, 스테이지 (31) 의 이면측에서부터 투명 기판 (12) 의 단자부 (17a) 에 형성된 이방성 도전 필름 (1) 에 대하여 자외광을 조사함으로써, 광 흡수제를 발열시킴과 함께, 투명 전극 (17) 의 단자부 (17a) 와 액정 구동용 IC (18) 의 전극 단자 (19) 에 의해 도전성 입자 (4) 를 협지한 상태로 바인더 수지를 경화시켜, 액정 구동용 IC (18) 를 투명 기판 (12) 의 단자부 (17a) 에 도통 접속하는 것이다.The ultraviolet irradiator 35 emits ultraviolet light to the anisotropic conductive film 1 formed on the terminal portion 17a of the transparent substrate 12 from the backside of the stage 31 to heat the light absorber, The binder resin is cured in a state in which the conductive particles 4 are sandwiched by the terminal portion 17a of the electrode 17 and the electrode terminal 19 of the liquid crystal driving IC 18 to cause the liquid crystal driving IC 18 to be transparent And is electrically connected to the terminal portion 17a of the substrate 12.

자외선 조사기 (35) 는, 광 중합 개시제의 흡수 피크 파장역에 최대 발광 파장을 갖는 자외선 램프를 사용할 수 있다. 또한, 자외선 조사기 (35) 는, 광 중합 개시제의 흡수 피크 파장역 및 광 흡수제의 흡수 피크 파장역에 피크를 갖는 분광 분포를 가진 수은 램프나, 광 중합 개시제 및 광 흡수제의 양 흡수 피크 파장을 포함하는 파장역에 걸쳐서 자외선을 조사하는 메탈 할라이드 램프 등을 사용할 수 있다. 또한, 자외선 조사기 (35) 는, 광 중합 개시제의 흡수 피크 파장역에 피크를 갖는 LED 램프와 광 흡수제의 흡수 피크 파장역에 피크를 갖는 LED 램프를 병용해도 된다.The ultraviolet irradiator 35 may use an ultraviolet lamp having a maximum emission wavelength in the absorption peak wavelength range of the photopolymerization initiator. The ultraviolet irradiator 35 includes the absorption peak wavelengths of the mercury lamp, the photopolymerization initiator, and the light absorbent having a spectral distribution having a peak in the absorption peak wavelength range of the photopolymerization initiator and the absorption peak wavelength band of the light absorbent A metal halide lamp which irradiates ultraviolet rays over a wavelength range where the ultraviolet rays are irradiated can be used. The ultraviolet irradiator 35 may use an LED lamp having a peak in the absorption peak wavelength range of the photopolymerization initiator and an LED lamp having a peak in the absorption peak wavelength range of the light absorbent.

[접속 공정] [Connection Process]

이어서, 상기 서술한 접속 장치 (30) 를 사용한 액정 구동용 IC (18) 의 접속 공정에 대해서 설명한다. 먼저, 투명 기판 (12) 을 가(假)부착용의 스테이지 상에 재치하고, 이방성 도전 필름 (1) 을 투명 전극 (17) 상에 가압착한다. 이방성 도전 필름 (1) 을 가압착하는 방법은, 투명 기판 (12) 의 투명 전극 (17) 상에, 바인더 수지층 (3) 이 투명 전극 (17) 측이 되도록 이방성 도전 필름 (1) 을 배치한다.Next, the connection process of the liquid crystal driving IC 18 using the above-described connection device 30 will be described. First, the transparent substrate 12 is placed on a stage for temporary attachment, and the anisotropic conductive film 1 is pressed on the transparent electrode 17. The anisotropic conductive film 1 is placed on the transparent electrode 17 of the transparent substrate 12 such that the binder resin layer 3 is on the transparent electrode 17 side do.

그리고, 바인더 수지층 (3) 을 투명 전극 (17) 상에 배치한 후, 박리 필름 (2) 측에서부터 바인더 수지층 (3) 을 가부착용의 열 압착 헤드로 가열 및 가압하고, 박리 필름 (2) 을 바인더 수지층 (3) 으로부터 박리함으로써, 바인더 수지층 (3) 만이 투명 전극 (17) 상에 가부착된다. 가부착용의 열 압착 헤드에 의한 가압착은, 박리 필름 (2) 의 상면을 약간의 압력 (예를 들어 0.1㎫∼2㎫ 정도) 으로 투명 전극 (17) 측으로 압압하면서 가열 (예를 들어 70∼100℃ 정도) 한다.After the binder resin layer 3 is disposed on the transparent electrode 17, the binder resin layer 3 is heated and pressed from the side of the release film 2 by a thermocompression bonding head, and the release film 2 Is peeled off from the binder resin layer 3, only the binder resin layer 3 is adhered onto the transparent electrode 17. The pressurization by the thermocompression bonding head is performed by pressing the upper surface of the peeling film 2 toward the transparent electrode 17 with a slight pressure (for example, about 0.1 MPa to 2 MPa) while heating (for example, 100 deg. C).

다음으로, 투명 기판 (12) 이 스테이지 (31) 상에 재치되고, 투명 기판 (12) 의 투명 전극 (17) 과 액정 구동용 IC (18) 의 전극 단자 (19) 가 바인더 수지층 (3) 을 사이에 두고 대향하도록, 액정 구동용 IC (18) 가 배치된다.Next, the transparent substrate 12 is placed on the stage 31, and the transparent electrodes 17 of the transparent substrate 12 and the electrode terminals 19 of the liquid crystal driving IC 18 are bonded to the binder resin layer 3, The liquid crystal driving IC 18 is disposed so as to face each other with a space therebetween.

다음으로, 스테이지 (31) 의 이면측에서부터 자외선 조사기 (35) 에 의해 소정의 자외광을 조사함과 함께, 액정 구동용 IC (18) 의 상면을 압착 헤드 (33) 에 의해, 소정의 압력으로 압압한다. 자외광은, 스테이지 (31), 투명 기판 (12) 을 투과하여 바인더 수지층 (3) 에 입사되고, 광 중합 개시제 및 광 흡수제에 흡수된다. 광 중합 개시제는 자외광을 흡수함으로써 산 또는 라디칼을 발생하고, 이것에 의해 바인더 수지의 경화 반응이 진행된다. 또한, 광 흡수제는 자외광을 흡수함으로써 소정의 온도로 발열하여 (예를 들어 80∼90℃), 바인더 수지를 용융시킨다.Next, predetermined ultraviolet light is irradiated from the back side of the stage 31 by the ultraviolet ray irradiator 35 and the upper surface of the liquid crystal driving IC 18 is irradiated with the pressure head 33 at a predetermined pressure . The ultraviolet light is transmitted through the stage 31 and the transparent substrate 12 to be incident on the binder resin layer 3 and absorbed by the photo polymerization initiator and the light absorbent. The photopolymerization initiator generates an acid or a radical by absorbing ultraviolet light, whereby the curing reaction of the binder resin proceeds. Further, the light absorbent absorbs ultraviolet light to generate heat at a predetermined temperature (for example, 80 to 90 캜) to melt the binder resin.

즉, 본 접속 공정에서는, 광 흡수제의 발열에 의해 바인더 수지를 용융시키고, 이 상태로, 압착 헤드 (33) 에 의해 압압함으로써, 투명 전극 (17) 의 단자부 (17a) 와 액정 구동용 IC (18) 의 전극 단자 (19) 사이로부터 바인더 수지를 유출시킴과 함께, 도전성 입자 (4) 를 충분히 밀어 넣을 수 있다. 그리고, 투명 전극 (17) 의 단자부 (17a) 와 액정 구동용 IC (18) 의 전극 단자 (19) 사이에 도전성 입자 (4) 가 협지된 상태로 바인더 수지가 경화된다. 따라서, 본 접속 공정에서는, 실온하에서 액정 구동용 IC (18) 를 가압함으로써, 휨의 영향이나 액정 구동용 IC (18) 등의 전자 부품에 대한 열 충격의 영향을 누르면서, 액정 구동용 IC (18) 와의 전기적 도통성 및 기계적 접속성이 양호한 접속체를 제조할 수 있다.That is, in this connecting step, the binder resin is melted by the heat of the light absorbent, and in this state, by the pressing head 33, the terminal portion 17a of the transparent electrode 17 and the liquid crystal driving IC 18 The binder resin can be discharged from between the electrode terminals 19 of the conductive particles 4, and the conductive particles 4 can be sufficiently pushed in. The binder resin is cured in a state in which the conductive particles 4 are sandwiched between the terminal portion 17a of the transparent electrode 17 and the electrode terminal 19 of the liquid crystal driving IC 18. [ Therefore, in this connection step, the liquid crystal driving IC 18 is pressed under the room temperature, and the liquid crystal driving IC 18 (or the liquid crystal driving IC 18) is pressed while the influence of the bending and the influence of the thermal impact on the electronic component, It is possible to manufacture a connection member having good electrical continuity and mechanical connection with the substrate.

이 때, 전술한 바와 같이 이방성 도전 필름 (1) 은, 광 중합 개시제 및 광 흡수제로서, 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 20㎚ 이상 큰 것을 사용한다. 이로써, 광 중합 개시제와 광 흡수제의 각 자외선 흡수를 서로 저해하지 않고, 각각 바인더 수지의 경화 반응의 진행과, 발열에 의한 바인더 수지의 용융을 실시할 수 잇다.At this time, as described above, the anisotropic conductive film (1) is used as a photopolymerization initiator and a light absorber, wherein the light absorption peak wavelength of the light absorbent is 20 nm or more larger than the light absorption peak wavelength of the photopolymerization initiator. As a result, the curing reaction of the binder resin can be progressed and the binder resin can be melted by heat generation without inhibiting the ultraviolet absorption of the photo polymerization initiator and the light absorbing agent from each other.

또한, 광 흡수제의 발열은 투명 기판 (12) 과 액정 구동용 IC (18) 에 동등하게 전달되기 때문에, 압착 헤드 (33) 에 의해서 가열하는 경우와 달리, 투명 기판 (12) 과 액정 구동용 IC (18) 사이에 열 구배가 발생하는 일도 없고, 가열 온도 차에서 기인하는 휨의 발생, 휨에 따르는 표시 불균일이나 전자 부품의 접속 불량 등의 문제가 대폭 개선되어 있다.Since the heat of the light absorbing agent is equally transmitted to the transparent substrate 12 and the liquid crystal driving IC 18, unlike the case of heating by the pressing head 33, the transparent substrate 12 and the liquid crystal driving IC 18, There is no occurrence of a thermal gradient between the heating elements 18, and problems such as occurrence of warpage caused by the difference in heating temperature, display irregularity caused by warping, connection failure of electronic components, and the like are greatly improved.

또, 자외선 조사기 (35) 에 의한 조사 시간이나 조도, 총 조사량은, 바인더 수지의 조성이나, 압착 헤드 (33) 에 의한 압력 및 시간으로부터, 바인더 수지의 경화 반응의 진행과 압착 헤드 (33) 에 의한 밀어 넣기에 따른 접속 신뢰성, 접착 강도의 향상을 꾀하는 조건을 적절히 설정한다.The irradiation time, the illuminance, and the total irradiation amount by the ultraviolet ray irradiator 35 are controlled by the composition of the binder resin and the pressure and time by the pressing head 33 so that the curing reaction of the binder resin progresses, The conditions for improving the connection reliability and the bonding strength in accordance with the pushing are suitably set.

그 후, 접속 장치 (30) 는, 압착 헤드 (33) 를 스테이지 (31) 의 상방으로 이동시키는 것에 의해, 액정 구동용 IC (18) 의 본 압착 공정을 종료한다.Thereafter, the connection device 30 moves the compression head 33 to the upper side of the stage 31, thereby completing the final compression bonding process of the liquid crystal driving IC 18. [

액정 구동용 IC (18) 를 투명 기판 (12) 의 투명 전극 (17) 상에 접속한 후, 동일하게 하여 플렉시블 기판 (21) 이 투명 기판 (12) 의 투명 전극 (17) 상에 실장되는 이른바 FOG (film on glass) 실장이 행하여진다. 이 때도, 마찬가지로 이방성 도전 필름 (1) 을 사용함으로써, 자외선 조사기 (35) 로부터의 자외광을 흡수하여, 광 흡수제의 발열에 의해서 바인더 수지의 용융과 산 또는 라디칼의 발생에 의한 경화 반응을 진행시킬 수 있다.In which the flexible substrate 21 is mounted on the transparent electrode 17 of the transparent substrate 12 after the liquid crystal driving IC 18 is connected to the transparent electrode 17 of the transparent substrate 12, FOG (film on glass) mounting is performed. At this time, similarly, by using the anisotropic conductive film 1, ultraviolet light from the ultraviolet irradiator 35 is absorbed, and the curing reaction by the melting of the binder resin and the generation of an acid or a radical is promoted by the heat generation of the light absorbent .

이로써, 이방성 도전 필름 (1) 을 통해서 투명 기판 (12) 과 액정 구동용 IC (18) 나 플렉시블 기판 (21) 이 접속된 접속체를 제조할 수 있다. 또, 이들 COG 실장과 FOG 실장은, 동시에 실시해도 된다.This makes it possible to manufacture a connection body to which the transparent substrate 12, the liquid crystal driving IC 18 and the flexible substrate 21 are connected through the anisotropic conductive film 1. [ These COG mounting and FOG mounting may be performed simultaneously.

이상, 액정 구동용 IC 를 직접 액정 표시 패널의 유리 기판 상에 실장하는 COG 실장, 및 플렉시블 기판을 직접 액정 표시 패널의 기판 상에 실장하는 FOG 실장을 예로 설명하였지만, 본 기술은, 광 경화형의 접착제를 사용한 접속체의 제조 공정이면, 투명 기판 상에 전자 부품을 실장하는 것 이외의 각종 접속에도 적용할 수 있다.Although the COG mounting in which the liquid crystal driving IC is directly mounted on the glass substrate of the liquid crystal display panel and the FOG mounting in which the flexible substrate is mounted directly on the substrate of the liquid crystal display panel have been described above, The present invention can be applied to various connections other than mounting electronic components on a transparent substrate.

[기타] [Other]

또한, 본 발명은, 상기 서술한 자외선 경화형의 도전성 접착제를 사용하는 것 외에, 예를 들어 적외광 등의 다른 파장의 광선에 의해서 경화되는 광 경화형의 도전성 접착제를 사용할 수도 있다.In addition to the use of the above-described ultraviolet curable conductive adhesive, the present invention can also use a photo-curable conductive adhesive which is cured by light of another wavelength, such as infrared light.

상기에서는 도전성의 접착제로서 필름 형상을 갖는 이방성 도전 필름 (1) 에 대해서 설명하였지만, 페이스트상이어도 문제는 없다. 또한, 바인더 수지층 (3) 은, 도전성 입자 (4) 를 함유하지 않은 바인더 수지로 이루어지는 절연성 접착제층과 도전성 입자 (4) 를 함유한 바인더 수지로 이루어지는 도전성 접착제층이 적층된 구성이어도 된다. 이 경우, 절연성 접착제층 및 도전성 접착제층에, 각각 흡수 피크 파장이 어긋나 있는 광 흡수제 및 광 중합 개시제를 함유시키는 것이 바람직하다.In the above description, the anisotropic conductive film 1 having a film shape as the conductive adhesive has been described. However, the anisotropic conductive film 1 may be a paste. The binder resin layer 3 may be formed by laminating an insulating adhesive layer made of a binder resin not containing the conductive particles 4 and a conductive adhesive layer made of a binder resin containing the conductive particles 4. [ In this case, it is preferable that the insulating adhesive layer and the conductive adhesive layer contain a light absorber and a photopolymerization initiator each having an absorption peak wavelength shifted from each other.

또한, 본 발명은, 도전성 입자 (4) 를 함유하지 않은 바인더 수지층으로 이루어지는 절연성 접착 필름, 및 도전성 입자 (4) 를 함유하지 않은 페이스트상의 바인더 수지를 사용한 절연성 접착 페이스트에 의한 접속 공정에 사용해도 된다. 본 발명에 관련된 접착제는, 광 중합 개시제 및 광 흡수제를 함유하는 회로 접속용 접착제이면, 도전성 입자 (4) 의 유무나, 필름이나 페이스트 등의 형태는 상관하지 않는다.The present invention can also be used in connection with an insulating adhesive film comprising a binder resin layer containing no conductive particles (4) and an insulating adhesive paste using a paste-like binder resin containing no conductive particles (4) do. The adhesive relating to the present invention is not limited to the presence of the conductive particles (4) and the form such as film or paste as long as it is a circuit connection adhesive containing a photo polymerization initiator and a light absorbent.

또, 본 접속 공정에서는, 스테이지 (31) 에 히터 등의 가열 기구를 형성하여 광 흡수제에 의한 발열 온도 이하의 온도로 투명 기판 (12) 을 가열해도 된다. 또, 본 접속 공정에서는, 압착 헤드 (33) 에 의해서 광 흡수제에 의한 발열 온도 이하의 온도로 액정 구동용 IC (18) 를 가열해도 된다. 이로써, 광 흡수제의 발열과 더불어서 바인더 수지층 (3) 을 충분히 용융시켜, 단자부 (17a) 와 전극 단자 (19) 에서 확실히 도전성 입자 (4) 를 밀어 넣어, 접속성을 향상시킬 수 있다.In this connection step, a heating mechanism such as a heater may be formed on the stage 31 to heat the transparent substrate 12 to a temperature not higher than the heat generation temperature by the light absorbent. In this connection step, the liquid crystal driving IC 18 may be heated by the compression head 33 to a temperature equal to or lower than the heat generation temperature by the light absorbent. Thereby, the binder resin layer 3 is sufficiently melted together with the heat generation of the light absorbent, and the conductive particles 4 are surely pushed in by the terminal portions 17a and the electrode terminals 19, so that the connection property can be improved.

실시예Example

이어서, 본 기술의 실시예에 대해서 설명한다. 본 실시예는, 이방성 도전 필름의 배합 및 경화 조건을 다르게 하여 제조한 투명 기판과 IC 칩의 접속체 샘플에 대해서, IC 칩과 투명 기판의 접속상태를 도통 저항값 (Ω) 및 휨량에 의해서 평가하였다.Next, an embodiment of the present technology will be described. In this embodiment, the connection state between the IC chip and the transparent substrate is evaluated by the conduction resistance value (?) And the amount of warpage with respect to the sample of the connection substrate of the transparent substrate and the IC chip manufactured by differently mixing the anisotropic conductive film and curing conditions Respectively.

접속에 사용하는 접착제로서, 광 카티온 중합 개시제와 카티온 중합성 화합물을 함유하는 바인더 수지층으로 이루어지는 이방성 도전 필름을 준비하였다.An anisotropic conductive film comprising a binder resin layer containing a cationic photopolymerization initiator and a cationic polymerization initiator was prepared as an adhesive for use in connection.

평가 소자로서, 외형 ; 1.8㎜×34㎜, 두께 0.5㎜ 이고, 도통 측정용 배선을 형성한 평가용 IC 를 사용하였다.As an evaluation element, an outer shape; 1.8 mm x 34 mm, and thickness 0.5 mm, and an interconnect for conductivity measurement was formed.

평가용 IC 가 접속되는 평가 기재로서, 두께 0.5㎜ 의 ITO 코팅 글래스를 사용하였다.As the evaluation substrate to which the evaluation IC was connected, ITO coated glass having a thickness of 0.5 mm was used.

이 유리 기판에 이방성 도전 필름을 사이에 두고 평가용 IC 를 배치하고, 압착 툴 (10.0㎜×40.0㎜) 에 의해 가압함과 함께, 자외선 조사에 의해 접속함으로써, 접속체 샘플을 형성하였다. 압착 툴은 가압면에 두께 0.05㎜ 의 불소 수지 가공이 실시되어 있다. 또한, 자외선 조사기 (SP-9 : 우시오 전기 주식회사 제) 의 조도는, 365㎚ 에서 300mW/㎠, 310㎚ 에서 210mW/㎠, 자외선의 조사 크기는, 폭 약 4.0㎜×길이 약 44.0㎜ 로 하였다.An evaluation IC was placed on this glass substrate with an anisotropic conductive film sandwiched therebetween, pressed with a compression tool (10.0 mm x 40.0 mm) and connected by ultraviolet irradiation to form a connector sample. The pressing tool is subjected to fluorine resin processing with a thickness of 0.05 mm on the pressing surface. The illuminance of the ultraviolet irradiator (SP-9: manufactured by Ushio Inc.) was 300 mW / cm 2 at 365 nm, 210 mW / cm 2 at 310 nm, and the irradiated size of ultraviolet light was 4.0 mm in length and 44.0 mm in length.

[실시예 1] [Example 1]

실시예 1 에서는, 이방성 도전 필름의 바인더 수지층으로서, In Example 1, as the binder resin layer of the anisotropic conductive film,

페녹시 수지 (YP-70 : 신닛테츠 스미토모 화학 주식회사 제) ; 20질량부Phenoxy resin (YP-70: manufactured by Shin-Tetsu Sumitomo Chemical Co., Ltd.); 20 parts by mass

액상 에폭시 수지 (EP828 : 미쓰비시 화학 주식회사 제) ; 30질량부Liquid epoxy resin (EP828: manufactured by Mitsubishi Chemical Corporation); 30 parts by mass

고형 에폭시 수지 (YD014 : 신닛테츠 스미토모 화학 주식회사 제) ; 20질량부Solid epoxy resin (YD014: manufactured by Shinnitetsu Sumitomo Chemical Co., Ltd.); 20 parts by mass

도전성 입자 (AUL704 : 세키스이 화학 공업 주식회사 제) ; 30질량부Conductive particles (AUL704: manufactured by Sekisui Chemical Co., Ltd.); 30 parts by mass

광 카티온 중합 개시제 (SP-170 : ADEKA 주식회사 제) ; 5질량부A photocathione polymerization initiator (SP-170: manufactured by ADEKA Corporation); 5 parts by mass

광 흡수제 (LA-36 : ADEKA 주식회사 제) ; 5질량부Light absorber (LA-36: manufactured by ADEKA Corporation); 5 parts by mass

를 혼합시킨 수지 용액을 작성하고, 이 수지 용액을 PET 필름 상에 도포, 건조시켜, 두께 20㎛ 의 필름상으로 성형한 것을 사용하였다.And this resin solution was coated on a PET film and dried to form a film having a thickness of 20 탆.

광 카티온 중합 개시제 (SP-170) 의 흡수 피크 파장은 약 310㎚, 광 흡수제 (LA-36) 의 흡수 피크 파장은 약 340㎚ 로, 그 차는 30㎚ 이다.The absorption peak wavelength of the photo cationic polymerization initiator (SP-170) is about 310 nm, and the absorption peak wavelength of the light absorbent (LA-36) is about 340 nm, and the difference is 30 nm.

압착 툴의 압압 조건은, 실온하에서 70㎫, 5초이다. 자외선 조사기의 조사 시간은 5초이다.The compression conditions of the compression tool are 70 MPa and 5 seconds at room temperature. The irradiation time of the ultraviolet irradiator is 5 seconds.

[실시예 2] [Example 2]

실시예 2 에서는, 바인더 수지층에 광 흡수제 (LA-31 : ADEKA 주식회사 제) 를 5질량부 배합한 것 이외에는, 실시예 1 과 동일한 배합의 이방성 도전 필름을 사용하였다.In Example 2, an anisotropic conductive film having the same composition as in Example 1 was used except that 5 parts by mass of a light absorbent (LA-31: manufactured by ADEKA Corporation) was blended in the binder resin layer.

광 카티온 중합 개시제 (SP-170) 의 흡수 피크 파장은 약 310㎚, 광 흡수제 (LA-31) 의 흡수 피크 파장은 345㎚ 로, 그 차는 35㎚ 이다.The absorption peak wavelength of the photo cationic polymerization initiator (SP-170) is about 310 nm and the absorption peak wavelength of the light absorbent (LA-31) is 345 nm, and the difference is 35 nm.

압착 툴의 압압 조건 및 자외선 조사기의 조사 시간은 실시예 1 과 동일하다.The pressing conditions of the pressing tool and the irradiation time of the ultraviolet irradiator were the same as those in Example 1. [

[실시예 3] [Example 3]

실시예 3 에서는, 바인더 수지층에 광 흡수제로서 광 라디칼 중합 개시제 (OXE1 : BASF 사 제조) 를 5질량부 배합한 것 이외에는, 실시예 1 과 동일한 배합의 이방성 도전 필름을 사용하였다.In Example 3, an anisotropic conductive film having the same composition as in Example 1 was used, except that 5 parts by mass of a photo radical polymerization initiator (OXE1: manufactured by BASF) as a light absorbent was added to the binder resin layer.

광 카티온 중합 개시제 (SP-170) 의 흡수 피크 파장은 약 310㎚, 광 흡수제 (OXE01) 의 흡수 피크는 330㎚ 로, 그 차는 20㎚ 이다.The absorption peak wavelength of the photocathode polymerization initiator (SP-170) is about 310 nm, and the absorption peak of the optical absorbent (OXE01) is 330 nm, and the difference is 20 nm.

압착 툴의 압압 조건 및 자외선 조사기의 조사 시간은 실시예 1 과 동일하다.The pressing conditions of the pressing tool and the irradiation time of the ultraviolet irradiator were the same as those in Example 1. [

[비교예 1] [Comparative Example 1]

비교예 1 에서는, 바인더 수지층에 광 흡수제를 배합하지 않은 것 이외에는, 실시예 1 과 동일한 배합의 이방성 도전 필름을 사용하였다.In Comparative Example 1, an anisotropic conductive film having the same composition as in Example 1 was used, except that the binder resin layer was not blended with a light absorber.

압착 툴의 압압 조건 및 자외선 조사기의 조사 시간은 실시예 1 과 동일하다.The pressing conditions of the pressing tool and the irradiation time of the ultraviolet irradiator were the same as those in Example 1. [

[비교예 2] [Comparative Example 2]

비교예 2 에서는, 바인더 수지층에 광 흡수제 (LA-46 : ADEKA 주식회사 제) 를 5질량부 배합한 것 이외에는, 실시예 1 과 동일한 배합의 이방성 도전 필름을 사용하였다.In Comparative Example 2, an anisotropic conductive film having the same composition as in Example 1 was used except that 5 parts by mass of a light absorbent (LA-46: manufactured by Adeka Co., Ltd.) was blended in the binder resin layer.

광 카티온 중합 개시제 (SP-170) 의 흡수 피크 파장은 약 310㎚, 광 흡수제 (LA-46) 의 흡수 피크 파장은 약 290㎚ 로, 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 작고, 그 차는 20㎚ 이다.The absorption peak wavelength of the photo-cationic polymerization initiator (SP-170) was about 310 nm, the absorption peak wavelength of the light absorbent (LA-46) was about 290 nm, and the light absorption peak wavelength of the photo- Is smaller than the peak wavelength, and the difference is 20 nm.

압착 툴의 압압 조건 및 자외선 조사기의 조사 시간은 실시예 1 과 동일하다.The pressing conditions of the pressing tool and the irradiation time of the ultraviolet irradiator were the same as those in Example 1. [

[비교예 3] [Comparative Example 3]

비교예 3 에서는, 압착 툴의 압압 조건을 100℃, 70㎫, 5초로 한 것 이외에는, 비교예 1 과 동일한 조건으로 하였다.In Comparative Example 3, the conditions were the same as those in Comparative Example 1, except that the pressing conditions of the pressing tool were 100 캜, 70 MPa, and 5 seconds.

[휨의 측정] [Measurement of warpage]

휨의 측정 방법은, 촉침식 표면 조도계 (SE-3H : 주식회사 코사카 연구소 제) 를 사용하여, 도 5 에 나타내는 바와 같이, 접합체 샘플의 유리 기판 (40) 하면으로부터 촉침 (41) 을 스캔하여, 평가용 IC 의 접속 후의 유리 기판면의 휨량 (㎛) 을 측정하였다.5, the stylus 41 is scanned from the undersurface of the glass substrate 40 of the sample of the joined body, and the evaluation is carried out by using a stylus 41 (see Fig. 5) using a stylus surface roughness meter (SE-3H: (占 퐉) of the surface of the glass substrate after the connection of the IC was measured.

[도통 저항의 측정] [Measurement of conduction resistance]

실시예 1, 2, 비교예 1∼3 에 관련된 접속체에 대해서, 디지털 멀티 미터를 사용하여, 접속 초기 및 신뢰성 시험 후 에 있어서의 도통 저항 (Ω) 을 측정하였다. 도통 저항값의 측정은, 도 6 에 나타내는 바와 같이, 평가용 IC 의 범프 (42) 와 접속된 ITO 코팅 글래스의 배선 (43) 에 디지털 멀티 미터를 접속하고, 이른바 4단자법으로 전류 2mA 를 흘렸을 때의 도통 저항값을 측정하였다. 신뢰성 시험의 조건은, 85℃ 85％ RH500hr 로 하였다.For the connection members related to Examples 1 and 2 and Comparative Examples 1 to 3, the conduction resistance (Ω) at the initial connection and after the reliability test was measured using a digital multimeter. 6, a digital multimeter was connected to the wiring 43 of the ITO-coated glass connected to the bump 42 of the evaluation IC, and a current of 2 mA was passed through the so-called four-terminal method The conduction resistance was measured. The reliability test was conducted under the conditions of 85 캜, 85% RH and 500 hr.

Figure pct00001
Figure pct00001

표 1 에 나타내는 바와 같이, 실시예 1∼3 에서는, 비교예 1 과 동등한 휨량이지만, 광 흡수제를 함유시킨 실시예 1∼3 쪽이 비교예 1 보다 초기 접속 저항 및 신뢰성 시험 후의 접속 저항이 모두 낮고, 양호한 접속성을 나타내었다. 이는, 실시예 1∼3 에 있어서는, 광 흡수제의 발열에 의해 바인더 수지층이 용융된 상태로 압압하였기 때문에, 바인더 수지를 배제함으로써 도전성 입자를 충분히 밀어 넣을 수 있고, 이 상태로 경화시킬 수 있는 것에 따른다. 한편, 비교예 1 에서는, 실온하에서 압착하였기 때문에 전극 단자 사이로부터의 바인더 수지의 배제가 진행되지 않어, 도전성 입자를 충분히 밀어 넣을 수 없다. 그 때문에, 실시예 1 및 2 와 비교하여 접속 초기에 있어서 도통 저항이 높아지고, 신뢰성 시험 후에 있어서는 더욱 도통 저항이 상승하였다.As shown in Table 1, in Examples 1 to 3, the warpage amounts were the same as those in Comparative Example 1, but in Examples 1 to 3 containing a light absorbent, the connection resistance after the initial connection resistance and the reliability test was lower than that of Comparative Example 1 , Indicating good connectivity. This is because, in Examples 1 to 3, since the binder resin layer was pressed in a molten state by the heat of the light absorbent, the conductive particles could be sufficiently pushed out by eliminating the binder resin, Follow. On the other hand, in Comparative Example 1, since the bonding was carried out at room temperature, the removal of the binder resin from between the electrode terminals did not progress, and the conductive particles could not be sufficiently pushed in. Therefore, as compared with Examples 1 and 2, the conduction resistance increased at the initial stage of connection, and after the reliability test, the conduction resistance further increased.

비교예 2 에서는, 광 흡수제와 광 카티온 중합 개시제의 각 흡수 피크 파장의 차가 20㎚ 이기는 하지만, 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 작기 때문에, 흡수 파장이 넓은 범위에서 중복되어, 광 카티온 중합 개시제에 의한 자외광의 흡수가 광 흡수제에 의해서 방해되고, 경화 반응의 진행이 불충분해졌다. 그 때문에, 휨량은 크게 저감하였지만, 초기 접속 저항이 높고, 신뢰성 시험 후에 있어서는 도통 저항이 크게 상승하였다.In Comparative Example 2, although the difference between the absorption peak wavelengths of the light absorbent and the cationic photopolymerization initiator was 20 nm, since the light absorption peak wavelength of the light absorbent was smaller than the light absorption peak wavelength of the photo polymerization initiator, So that the absorption of ultraviolet light by the photo cationic polymerization initiator was interrupted by the light absorbent and the progress of the curing reaction became insufficient. Therefore, the amount of warpage was greatly reduced, but the initial connection resistance was high, and after the reliability test, the conduction resistance was greatly increased.

비교예 3 에서는, 압착 툴에 의해서 평가용 IC 를 가열 압압하면서 자외선을 조사하고 있다. 그 때문에, 압착 툴에 의한 열이 평가용 IC 로 치우쳐 전달되어, 압착 툴이 분리된 후에 급격히 냉각되면, 평가용 IC 측의 변형이 유리 기판보다 커졌다. 그리고 비교예 3 에서는, 이 변형량의 차를 바인더 수지층에 의해서도 다 흡수하지 못하고, 휨량이 커졌다.In Comparative Example 3, ultraviolet rays are irradiated while heating and pressing the evaluation IC by a compression tool. Therefore, when the heat generated by the pressing tool is biased to the evaluation IC and rapidly cooled after the pressing tool is separated, the deformation of the evaluation IC side is larger than that of the glass substrate. In Comparative Example 3, the difference in the amount of deformation was not sufficiently absorbed by the binder resin layer, and the amount of warpage was increased.

한편, 실시예 1∼3 에서는, 광 흡수제가 자외선을 흡수함으로써 바인더 수지층이 발열하기 때문에, 평가용 IC 와 유리 기판에 거의 같은 열량이 가해진다. 그 때문에, 평가용 IC 와 유리 기판의 변형량은 거의 동일하고, 바인더 수지층에 의해서 변형량의 차를 흡수할 수 있기 때문에, 휨량을 비교적 작게 할 수 있다.On the other hand, in Examples 1 to 3, since the binder resin layer is heated by absorbing ultraviolet rays by the light absorbent, almost the same amount of heat is applied to the evaluation IC and the glass substrate. Therefore, the amount of deformation of the evaluation IC and the glass substrate is almost the same, and since the difference in deformation amount can be absorbed by the binder resin layer, the amount of deflection can be relatively reduced.

실시예 1 과 실시예 2 를 비교하면, 실시예 2 는 실시예 1 보다 저저항화가 꾀해지고 있다. 이는, 실시예 2 에서는, 광 흡수제의 흡광도가 높아 실시예 1 보다도 높은 반응열을 방출하고 있기 때문에, 바인더 수지층의 용융이 보다 현저히 진행된 것에 따른다. 이로써, 실시예 2 에서는 도전성 입자가 찌부러지기 쉬워, 실시예 1 에 비하여 보다 저저항화가 꾀해진 것이다.Comparing Example 1 and Example 2, Example 2 has lower resistance than Example 1. This is because in Example 2, since the absorbance of the light absorbent is high and the heat of reaction is released higher than in Example 1, the melting of the binder resin layer proceeds more remarkably. As a result, in Example 2, the conductive particles were prone to collapse, and the resistance was lowered in comparison with Example 1.

또한, 실시예 3 에서는, 광 흡수제로서 광 라디칼 중합 개시제를 사용하고 있지만, 라디칼계의 개시제이기 때문에, 개환하더라도 중합에는 편입되지 않고, 열만을 발생한다. 따라서, 그 때의 열을 이용하여 바인더 수지층을 용융시키는 것에 의해 도전성 입자를 충분히 밀어 넣을 수 있고, 이 상태로 광 경화제에 의해서 경화함으로써 양호한 접속이 가능해졌다.In Example 3, a photo radical polymerization initiator is used as the photoabsorber, but since it is a radical initiator, it is not incorporated into the polymerization even when the ring is opened, and only heat is generated. Therefore, by melting the binder resin layer using the heat at that time, the conductive particles can be sufficiently pushed in, and in this state, curing with the photo-curing agent makes it possible to achieve good connection.

1 이방성 도전 필름
2 박리 필름
3 바인더 수지층
4 도전성 입자
10 액정 표시 패널
11, 12 투명 기판
13 시일
14 액정
15 패널 표시부
16, 17 투명 전극
18 액정 구동용 IC
20 COG 실장부
21 플렉시블 기판
22 FOG 실장부
24 배향막
25, 26 편광판
30 접속 장치
31 스테이지
33 압착 헤드
35 자외선 조사기1 anisotropic conductive film
2 peeling film
3 binder resin layer
4 conductive particles
10 Liquid crystal display panel
11, 12 Transparent substrate
13 hours
14 liquid crystal
15 panel display
16, 17 Transparent electrode
18 LCD driving IC
20 COG mounting part
21 flexible substrate
22 FOG mounting part
24 orientation film
25, 26 polarizer
30 connecting device
31stage
33 Compression head
35 Ultraviolet irradiator

Claims (10)

광 중합성 화합물과, 광 중합 개시제와, 광 흡수제를 함유하고, 상기 광 흡수제의 광 흡수 피크 파장은 상기 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어져 있는 광 경화계 이방성 도전 접착제.An anisotropic conductive adhesive agent containing a photopolymerizable compound, a photopolymerization initiator, and a light absorber, wherein a light absorption peak wavelength of the light absorbent is larger than a light absorption peak wavelength of the photopolymerization initiator, . 제 1 항에 있어서, 상기 광 흡수제는, 자외선 흡수제 또는 라디칼 중합 개시제인 광 경화계 이방성 도전 접착제.The photocurable anisotropic conductive adhesive according to claim 1, wherein the light absorbent is an ultraviolet absorber or a radical polymerization initiator. 제 1 항 또는 제 2 항에 있어서, 상기 광 중합 개시제는 광 카티온 중합 개시제인 광 경화계 이방성 도전 접착제.The photocurable anisotropic conductive adhesive according to any one of claims 1 to 5, wherein the photopolymerization initiator is a photocathon polymerization initiator. 제 1 항 또는 제 2 항에 있어서, 상기 광 중합 개시제는 광 라디칼 중합 개시제이고, 상기 광 흡수제는 자외선 흡수제인 광 경화계 이방성 도전 접착제.The optically hardened anisotropic conductive adhesive according to claim 1 or 2, wherein the photopolymerization initiator is a photoradical polymerization initiator and the light absorber is an ultraviolet absorber. 제 1 항 또는 제 2 항에 있어서, 상기 광 중합 개시제의 광 흡수 피크 파장은 290㎚∼330㎚ 이고, 상기 광 흡수제의 광 흡수 피크 파장은 320㎚∼360㎚ 인 광 경화계 이방성 도전 접착제.The photo-curable anisotropic conductive adhesive according to claim 1 or 2, wherein the photo-polymerization initiator has a light absorption peak wavelength of 290 nm to 330 nm and a light absorption peak wavelength of the light absorbent is 320 nm to 360 nm. 제 1 항 또는 제 2 항에 있어서, 박리 기재에 지지되고, 필름형상으로 형성되어 있는 광 경화계 이방성 도전 접착제.The photo-curable anisotropic conductive adhesive according to claim 1 or 2, which is supported on a release substrate and formed into a film. 스테이지 상에 재치된 투명 기판 상에, 광 경화계 이방성 도전 접착제를 사이에 두고 전자 부품을 배치하고, 압착 툴에 의해 상기 전자 부품을 상기 투명 기판으로 압압하면서, 광 조사기로부터 광 조사를 실시하는 접속체의 제조 방법에 있어서, 상기 광 경화계 이방성 도전 접착제는, 광 중합성 화합물과, 광 중합 개시제와, 광 흡수제를 함유하고, 상기 광 흡수제의 광 흡수 피크 파장은 상기 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어지고, 상기 광 조사기는, 상기 광 중합 개시제의 광 흡수 피크 및 상기 광 흡수제의 광 흡수 피크를 포함하는 파장의 광을 조사하는 접속체의 제조 방법.An electronic component is disposed on a transparent substrate placed on a stage with a photo-curing anisotropic conductive adhesive interposed therebetween, and a connection for conducting light irradiation from a light irradiator while pressing the electronic component onto the transparent substrate with a compression tool Wherein the photocurable anisotropic conductive adhesive contains a photopolymerizable compound, a photopolymerization initiator, and a light absorber, and the light absorption peak wavelength of the light absorber is a light absorption peak of the photopolymerization initiator And the light irradiator irradiates light having a wavelength including a light absorption peak of the photo polymerization initiator and a light absorption peak of the light absorbent. 제 7 항에 있어서, 실온하에서, 압착 툴에 의해 상기 전자 부품을 상기 투명 기판으로 압압하면서, 광 조사기로부터 광 조사를 실시하는 접속체의 제조 방법.The method according to claim 7, wherein the electronic component is irradiated with light from a light irradiator while pressing the electronic component onto the transparent substrate with a compression tool under room temperature. 제 7 항에 있어서, 상기 스테이지 및/또는 상기 압착 툴은, 상기 광 흡수제가 상기 광 조사기로부터 조사된 광을 흡수함으로써 발열하는 온도 이하의 온도로 가열하는 접속체의 제조 방법.The method according to claim 7, wherein the stage and / or the pressing tool is heated to a temperature equal to or lower than a temperature at which the light absorbent absorbs light emitted from the light irradiator. 스테이지 상에 재치된 투명 기판 상에, 광 경화계 이방성 도전 접착제를 사이에 두고 전자 부품을 배치하고, 압착 툴에 의해 상기 전자 부품을 상기 투명 기판으로 압압하면서, 광 조사기로부터 광 조사를 실시하는 전자 부품의 접속 방법에 있어서, 상기 광 경화계 이방성 도전 접착제는, 광 중합성 화합물과, 광 중합 개시제와, 광 흡수제를 함유하고, 상기 광 흡수제의 광 흡수 피크 파장은 상기 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어지고, 상기 광 조사기는, 상기 광 중합 개시제의 광 흡수 피크 및 상기 광 흡수제의 광 흡수 피크를 포함하는 파장의 광을 조사하는 전자 부품의 접속 방법.
An electronic component is disposed on a transparent substrate placed on a stage with a photo-curing anisotropic conductive adhesive interposed therebetween, and an electronic component that irradiates light from the light irradiator while pressing the electronic component onto the transparent substrate with a compression tool A method of connecting a component, wherein the photocurable anisotropic conductive adhesive contains a photopolymerizable compound, a photopolymerization initiator, and a light absorbent, wherein a light absorption peak wavelength of the light absorbent is a light absorption peak of the photopolymerization initiator Wherein the light irradiation unit irradiates light having a wavelength including a light absorption peak of the photo polymerization initiator and a light absorption peak of the light absorbent.
KR1020167018337A 2014-03-11 2015-02-03 Anisotropic conductive adhesive, method for producing connector and method for connecting electronic component KR102397500B1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2014-047585 2014-03-11
JP2014047585A JP6425899B2 (en) 2014-03-11 2014-03-11 ANISOTROPIC CONDUCTIVE ADHESIVE, METHOD FOR MANUFACTURING CONNECTION AND METHOD FOR CONNECTING ELECTRONIC COMPONENTS
PCT/JP2015/052919 WO2015137008A1 (en) 2014-03-11 2015-02-03 Anisotropic conductive adhesive, method for producing connector and method for connecting electronic component

Publications (2)

Publication Number Publication Date
KR20160130977A true KR20160130977A (en) 2016-11-15
KR102397500B1 KR102397500B1 (en) 2022-05-12

Family

ID=54071460

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020167018337A KR102397500B1 (en) 2014-03-11 2015-02-03 Anisotropic conductive adhesive, method for producing connector and method for connecting electronic component

Country Status (5)

Country Link
JP (1) JP6425899B2 (en)
KR (1) KR102397500B1 (en)
CN (1) CN106062118B (en)
TW (1) TWI673570B (en)
WO (1) WO2015137008A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017097974A (en) * 2015-11-18 2017-06-01 デクセリアルズ株式会社 Anisotropically conductive film, method for connecting electronic component, and method for manufacturing connection structure

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107001865B (en) * 2014-11-12 2020-08-21 迪睿合株式会社 Photocurable anisotropic conductive adhesive, method for producing connected body, and method for connecting electronic component
JP2017112148A (en) * 2015-12-14 2017-06-22 デクセリアルズ株式会社 Connection method
JP2018065916A (en) * 2016-10-19 2018-04-26 デクセリアルズ株式会社 Method for producing connection body
US10739381B2 (en) * 2017-05-26 2020-08-11 Tektronix, Inc. Component attachment technique using a UV-cure conductive adhesive
JP2020077644A (en) * 2020-01-29 2020-05-21 デクセリアルズ株式会社 Thermosetting anisotropic conductive film, connection method and joined body

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10340748A (en) * 1997-06-06 1998-12-22 Hitachi Chem Co Ltd Method for connecting circuit electrode
JPH1174313A (en) * 1997-08-29 1999-03-16 Hitachi Chem Co Ltd Method for connecting electrode
JPH11236535A (en) * 1998-02-23 1999-08-31 Hitachi Chem Co Ltd Electrode connection adhesive and connected structure of fine electrodes
JP2008252098A (en) 2008-03-31 2008-10-16 Hitachi Chem Co Ltd Method of manufacturing circuit board apparatus
JP2013014755A (en) * 2011-06-10 2013-01-24 Sekisui Chem Co Ltd Anisotropic conductive material, connecting structure and method for producing connecting structure

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2579685B2 (en) * 1989-06-30 1997-02-05 東洋インキ製造株式会社 Thermal transfer material
JPH0346707A (en) * 1989-07-14 1991-02-28 Sumitomo Bakelite Co Ltd Anisotropic conductive film
JP3298110B2 (en) * 1991-04-03 2002-07-02 セイコーエプソン株式会社 Anisotropic conductive adhesive and bonding method thereof
US5891366A (en) * 1994-05-10 1999-04-06 Robert Bosch Gmbh Anisotropically conducting adhesive, and process for producing an anisotropically conducting adhesive
JP2000219824A (en) * 1999-01-29 2000-08-08 Toppan Forms Co Ltd Photo-setting silver coating material and sheets coated with the same
AU2327400A (en) * 1999-02-08 2000-08-25 Hitachi Chemical Co. Ltd. Adhesive, electrode-connecting structure, and method of connecting electrodes
JP2002014437A (en) * 2000-06-28 2002-01-18 Konica Corp Heat developable recording material
JP4788038B2 (en) * 2000-12-28 2011-10-05 日立化成工業株式会社 Adhesive composition, circuit terminal connection method using the same, and circuit terminal connection structure
JP2006267964A (en) * 2005-03-25 2006-10-05 Sekisui Chem Co Ltd Sealing agent for liquid crystal display element, vertical conduction material, liquid crystal element, and method for manufacturing liquid crystal display element
JP2007025176A (en) * 2005-07-14 2007-02-01 Fujifilm Holdings Corp Pattern forming material, pattern forming apparatus, and method for forming permanent pattern
JPWO2007023834A1 (en) * 2005-08-23 2009-02-26 株式会社ブリヂストン Adhesive composition
JP5245253B2 (en) * 2007-01-19 2013-07-24 住友ベークライト株式会社 Resin composition, insulating resin sheet with film or metal foil, multilayer printed wiring board, and semiconductor device
JP4978493B2 (en) * 2007-10-05 2012-07-18 日立化成工業株式会社 Circuit connection material, connection structure and manufacturing method thereof
JP2011008218A (en) * 2009-05-22 2011-01-13 Chisso Corp Optically anisotropic substance
JP5935337B2 (en) * 2012-01-16 2016-06-15 日立化成株式会社 Liquid photocurable resin composition, optical member, image display device and method for producing the same
JP6259177B2 (en) * 2012-04-16 2018-01-10 早川ゴム株式会社 Method for bonding anisotropic conductive film
JP6185742B2 (en) * 2013-04-19 2017-08-23 デクセリアルズ株式会社 Anisotropic conductive film, connection method, and joined body

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10340748A (en) * 1997-06-06 1998-12-22 Hitachi Chem Co Ltd Method for connecting circuit electrode
JPH1174313A (en) * 1997-08-29 1999-03-16 Hitachi Chem Co Ltd Method for connecting electrode
JPH11236535A (en) * 1998-02-23 1999-08-31 Hitachi Chem Co Ltd Electrode connection adhesive and connected structure of fine electrodes
JP2008252098A (en) 2008-03-31 2008-10-16 Hitachi Chem Co Ltd Method of manufacturing circuit board apparatus
JP2013014755A (en) * 2011-06-10 2013-01-24 Sekisui Chem Co Ltd Anisotropic conductive material, connecting structure and method for producing connecting structure

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017097974A (en) * 2015-11-18 2017-06-01 デクセリアルズ株式会社 Anisotropically conductive film, method for connecting electronic component, and method for manufacturing connection structure

Also Published As

Publication number Publication date
TW201535052A (en) 2015-09-16
CN106062118B (en) 2018-11-23
CN106062118A (en) 2016-10-26
WO2015137008A1 (en) 2015-09-17
KR102397500B1 (en) 2022-05-12
TWI673570B (en) 2019-10-01
JP2015172109A (en) 2015-10-01
JP6425899B2 (en) 2018-11-21

Similar Documents

Publication Publication Date Title
KR20160130977A (en) Anisotropic conductive adhesive, method for producing connector and method for connecting electronic component
JP5972844B2 (en) Anisotropic conductive film, method for manufacturing anisotropic conductive film, method for manufacturing connected body, and connection method
CN107079589B (en) Method for manufacturing connected body, method for connecting electronic component, and connected body
KR101517323B1 (en) Connection method, connected-body production method and connected body
JP6679320B2 (en) Connection body manufacturing method, electronic component connection method
JP5836830B2 (en) Manufacturing method of connecting body and connecting method
JP6639874B2 (en) Photocurable anisotropic conductive adhesive, method for manufacturing connector, and method for connecting electronic components
TWI581972B (en) A method of manufacturing a connecting body, and a method of connecting an electronic component
JP2015142120A (en) Method of manufacturing connection body, and connection method and connection device of electronic component
CN107230646B (en) Method for manufacturing connector
TWI603136B (en) Method of manufacturing connection body and connection method of electronic component
WO2016117613A1 (en) Method for producing connected body, method for connecting electronic component, and connected body
KR20180043169A (en) Method for manufacturing connected body
WO2015111599A1 (en) Connection body production method and electronic component connection method

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant