KR102397500B1 - Anisotropic conductive adhesive, method for producing connector and method for connecting electronic component - Google Patents
Anisotropic conductive adhesive, method for producing connector and method for connecting electronic component Download PDFInfo
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- KR102397500B1 KR102397500B1 KR1020167018337A KR20167018337A KR102397500B1 KR 102397500 B1 KR102397500 B1 KR 102397500B1 KR 1020167018337 A KR1020167018337 A KR 1020167018337A KR 20167018337 A KR20167018337 A KR 20167018337A KR 102397500 B1 KR102397500 B1 KR 102397500B1
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- South Korea
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- light
- anisotropic conductive
- absorption peak
- photopolymerization initiator
- peak wavelength
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J201/00—Adhesives based on unspecified macromolecular compounds
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J4/00—Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
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- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
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- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/0008—Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
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- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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- C—CHEMISTRY; METALLURGY
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- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
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- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/416—Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
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- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/28—Adhesive materials or arrangements
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Abstract
광 경화형의 접착제를 사용함으로써, 저온에서 전자 부품의 접속을 실시함과 함께, 전자 부품의 접속 불량을 개선한다. 박리 기재에 지지된 바인더 수지층을 갖고, 바인더 수지층은, 광 중합성 화합물과, 광 중합 개시제와, 광 흡수제와, 도전성 입자를 함유하고, 광 흡수제의 광 흡수 피크 파장은 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어져 있다.By using a photocurable adhesive agent, while connecting an electronic component at low temperature, the connection defect of an electronic component is improved. It has a binder resin layer supported by the peeling base material, The binder resin layer contains a photopolymerizable compound, a photoinitiator, a light absorber, and electroconductive particle, The light absorption peak wavelength of a light absorber is the light of a photoinitiator. It is larger than the absorption peak wavelength and is 20 nm or more apart.
Description
본 발명은 광 중합성 화합물과, 광 중합 개시제와, 광 흡수제를 함유한 이방성 도전 접착제, 이것을 사용한 접속체의 제조 방법, 및 전자 부품의 접속 방법에 관한 것이다. 본 출원은, 일본에서 2014년 3월 11일에 출원된 일본 특허출원번호 특원 2014-047585호를 기초로 하여 우선권을 주장하는 것이고, 이 출원은 참조에 의해 본 출원에 원용된다.The present invention relates to an anisotropic conductive adhesive containing a photopolymerizable compound, a photoinitiator, and a light absorber, a method for producing a connector using the same, and a method for connecting an electronic component. This application claims priority on the basis of Japanese Patent Application No. 2014-047585 for which it applied in Japan on March 11, 2014, This application is used for this application by reference.
종래부터 텔레비전이나 PC 모니터, 스마트폰, 휴대형 게임기, 디지털 오디오 플레이어, 타블렛 PC, 웨어러블 단말 또는 차재(車載)용 모니터 등의 각종 표시 수단 또는 표시 입력 수단으로서, 액정 표시 장치나 터치 패널 장치가 많이 사용되고 있다. 최근, 이러한 표시 장치나 터치 패널 장치에 있어서는, 파인피치화, 경량박형화 등의 관점에서 IC 칩을 직접 기판 상에 실장하는 이른바 COG (chip on glass) 나, 각종 회로가 형성된 플렉시블 기판을 직접 기판 상에 실장하는 이른바 FOG (film on glass) 가 채용되고 있다.Conventionally, as various display means or display input means, such as televisions, PC monitors, smartphones, portable game machines, digital audio players, tablet PCs, wearable terminals, or in-vehicle monitors, liquid crystal display devices and touch panel devices have been widely used. there is. In recent years, in such a display device or a touch panel device, so-called COG (chip on glass) in which an IC chip is directly mounted on a substrate, or a flexible substrate on which various circuits are formed, is directly mounted on the substrate from the viewpoint of fine-pitch reduction, light weight and thinness, etc. A so-called FOG (film on glass) mounted on the hood is employed.
예를 들어 COG 실장 방식이 채용된 액정 표시 장치 (100) 는, 도 7 에 나타내는 바와 같이, 액정 표시를 위한 주기능을 하는 액정 표시 패널 (104) 을 갖고 있고, 이 액정 표시 패널 (104) 은, 유리 기판 등으로 이루어지는 서로 대향하는 2장의 투명 기판 (102, 103) 을 갖고 있다. 그리고, 액정 표시 패널 (104) 은, 이들 양 투명 기판 (102, 103) 이 프레임형상의 시일 (105) 에 의해 서로 첩합(貼合)되어 있음과 함께, 양 투명 기판 (102, 103) 및 시일 (105) 에 의해 둘러싸인 공간 안에 액정 (106) 이 봉입된 패널 표시부 (107) 가 형성되어 있다.For example, the liquid
투명 기판 (102, 103) 은, 서로 대향하는 양 내측 표면에, ITO (산화인듐주석) 등으로 이루어지는 줄무늬형상의 한 쌍의 투명 전극 (108, 109) 이 서로 교차하도록 형성되어 있다. 그리고, 양 투명 기판 (102, 103) 은, 이들 양 투명 전극 (108, 109) 의 당해 교차 부위에 의해 액정 표시의 최소 단위로서의 화소가 구성되도록 되어 있다.The
양 투명 기판 (102, 103) 중, 일방의 투명 기판 (103) 은 타방의 투명 기판 (102) 보다 평면 치수가 크게 형성되어 있고, 이 크게 형성된 투명 기판 (103) 의 가장자리부 (103a) 에는, 투명 전극 (109) 의 단자부 (109a) 가 형성되어 있다. 또한, 양 투명 전극 (108, 109) 상에는, 소정의 러빙 처리가 실시된 배향막 (111, 112) 이 형성되어 있고, 이 배향막 (111, 112) 에 의해 액정 분자의 초기 배향이 규제되도록 되어 있다. 그리고, 양 투명 전극 (108, 109) 의 외측에는 한 쌍의 편광판 (118, 119) 이 배치되어 있고, 이들 양 편광판 (118, 119) 에 의해서 백라이트 등의 광원 (120) 으로부터의 투과광의 진동 방향이 규제되도록 되어 있다.Among the two
단자부 (109a) 상에는, 이방성 도전 필름 (114) 을 사이에 두고 액정 구동용 IC (115) 가 열 압착되어 있다. 이방성 도전 필름 (114) 은, 열 경화형의 바인더 수지에 도전성 입자를 혼합해 넣고 필름상으로 한 것으로, 2개의 도체 사이에서 가열 압착됨으로써 도전 입자에 의해 도체 사이의 전기적 도통이 취해지고, 바인더 수지로 도체 사이의 기계적 접속이 유지된다. 액정 구동용 IC (115) 는, 화소에 대하여 액정 구동 전압을 선택적으로 인가함으로써, 액정의 배향을 부분적으로 변화시켜 소정의 액정 표시를 실시할 수 있게 되어 있다. 또, 이방성 도전 필름 (114) 을 구성하는 접착제로는, 통상적으로 가장 신뢰성이 높은 열 경화성의 접착제를 사용하도록 되어 있다.On the
이러한 이방성 도전 필름 (114) 을 통해서 액정 구동용 IC (115) 를 단자부 (109a) 로 접속하는 경우에는, 먼저, 투명 전극 (109) 의 단자부 (109a) 상에 이방성 도전 필름 (114) 을 도시하지 않은 가(假)압착 수단에 의해서 가압착한다. 계속해서, 이방성 도전 필름 (114) 상에 액정 구동용 IC (115) 를 재치(載置)한 후, 도 8에 나타내는 바와 같이 열 압착 헤드 등의 열 압착 수단 (121) 에 의해 액정 구동용 IC (115) 를 이방성 도전 필름 (114) 과 함께 단자부 (109a) 측으로 압압(押壓)하면서 열 압착 수단 (121) 을 발열시킨다. 이 열 압착 수단 (121) 에 의한 발열에 의해서 이방성 도전 필름 (114) 은 열 경화 반응을 일으키고, 이로써, 이방성 도전 필름 (114) 을 통해서 액정 구동용 IC (115) 가 단자부 (109a) 상에 접착된다.When the liquid crystal driving IC 115 is connected to the
그러나, 이러한 이방성 도전 필름을 사용한 접속 방법에 있어서는, 열가압 온도가 높아, 액정 구동용 IC (115) 등의 전자 부품이나 투명 기판 (103) 에 대한 열 충격이 커진다. 이에 추가하여, 이방성 도전 필름이 접속된 후, 상온까지 온도가 저하될 때, 그 열 압착 수단 (121) 과 맞닿는 전자 부품과 투명 기판 (103) 의 온도 차에서 기인하여, 투명 기판 (103) 의 단자부 (109a) 에 휨이 발생할 수 있다. 그 때문에, 단자부 (109a) 주변의 액정 화면에 발생하는 표시 불균일이나 액정 구동용 IC (115) 의 접속 불량 등의 문제를 야기할 우려가 있었다. 이 경향은, 투명 기판 (103) 의 협(狹)프레임화나 유리의 박형화에 수반하여 현저하게 나타난다.However, in the connection method using such an anisotropic conductive film, the thermal press temperature is high, and the thermal shock with respect to electronic components, such as the
그래서, 이러한 열 경화형의 접착제를 사용한 이방성 도전 필름 (114) 을 대신하여 자외선 경화형의 접착제를 사용한 접속 방법도 제안되어 있다. 자외선 경화형의 접착제를 사용하는 접속 방법에 있어서는, 열 압착 수단을 사용하지 않고, 상온에서 액정 구동용 IC (115) 등의 전자 부품을 압압하고, 투명 기판 (103) 의 뒷편에서부터 자외선을 조사함으로써 바인더 수지를 경화시킨다. 이 때문에, 전자 부품이나 투명 기판의 가열 온도 차에서 기인하는 투명 기판 (103) 이나 액정 구동용 IC (115) 의 휨을 방지할 수 있다.Then, instead of the anisotropic
그러나, 자외선 경화형의 접착제를 사용하는 접속 방법에 있어서도, 바인더 수지의 점도가 높은 상태에서 가압하면, 도전성 입자를 충분히 밀어 넣을 수 없고, 접속 초기에 있어서는 양호한 접속 저항이라도, 접속 후에 있어서의 경시적, 환경적 요인에 의해 도통 저항이 상승할 우려가 있다.However, even in the connection method using an ultraviolet curing adhesive, when pressurizing in a state where the viscosity of the binder resin is high, the conductive particles cannot be sufficiently pushed in. There is a possibility that the conduction resistance may increase due to environmental factors.
본 발명은 상기 서술한 과제를 해결하는 것으로, 광 경화형의 접착제를 사용함으로써, 저온에서 전자 부품의 접속을 실시하는 동시에, 전자 부품의 접속 불량을 개선하는 이방성 도전 접착제, 접속체의 제조 방법 및 전자 부품의 접속 방법을 제공하는 것을 목적으로 한다.The present invention solves the above-described problems, and by using a photocurable adhesive, an anisotropic conductive adhesive for connecting electronic components at low temperature and improving connection failure of electronic components, a method for manufacturing a connector, and an electronic device An object of the present invention is to provide a method for connecting parts.
상기 서술한 과제를 해결하기 위해서, 본 발명에 관련된 이방성 도전 접착제는, 광 중합성 화합물과, 광 중합 개시제와, 광 흡수제를 함유하고, 상기 광 흡수제의 광 흡수 피크 파장은 상기 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어져 있는 것이다.In order to solve the above-mentioned subject, the anisotropic conductive adhesive which concerns on this invention contains a photopolymerizable compound, a photoinitiator, and a light absorber, The light absorption peak wavelength of the said light absorber is the light of the said photoinitiator. It is larger than the absorption peak wavelength and is 20 nm or more apart.
또한, 본 발명에 관련된 접속체의 제조 방법은, 스테이지 상에 재치된 투명 기판 상에, 광 경화계 이방성 도전 접착제를 사이에 두고 전자 부품을 배치하고, 압착 툴에 의해 상기 전자 부품을 상기 투명 기판으로 압압하면서, 광 조사기로부터 광 조사를 실시하는 접속체의 제조 방법에 있어서, 상기 광 경화계 이방성 도전 접착제는, 광 중합성 화합물과, 광 중합 개시제와, 광 흡수제를 함유하고, 상기 광 흡수제의 광 흡수 피크 파장은 상기 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어지고, 상기 광 조사기는, 상기 광 중합 개시제의 광 흡수 피크 및 상기 광 흡수제의 광 흡수 피크를 포함하는 파장의 광을 조사하는 것이다.Further, in the method for manufacturing a connector according to the present invention, an electronic component is disposed on a transparent substrate mounted on a stage with a photocurable anisotropic conductive adhesive interposed therebetween, and the electronic component is applied to the transparent substrate by a crimping tool. In the manufacturing method of the connector which irradiates light from a light irradiator while pressing with The light absorption peak wavelength is greater than the light absorption peak wavelength of the photopolymerization initiator and is separated by 20 nm or more, and the light irradiator is light of a wavelength including the light absorption peak of the photopolymerization initiator and the light absorption peak of the light absorber is to investigate
또한, 본 발명에 관련된 전자 부품의 접속 방법은, 스테이지 상에 재치된 투명 기판 상에, 광 경화계 이방성 도전 접착제를 사이에 두고 전자 부품을 배치하고, 압착 툴에 의해 상기 전자 부품을 상기 투명 기판으로 압압하면서, 광 조사기로부터 광 조사를 실시하는 전자 부품의 접속 방법에 있어서, 상기 광 경화계 이방성 도전 접착제는, 광 중합성 화합물과, 광 중합 개시제와, 광흡 수제를 함유하고, 상기 광 흡수제의 광 흡수 피크 파장은 상기 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어지고, 상기 광 조사기는, 상기 광 중합 개시제의 광 흡수 피크 및 상기 광 흡수제의 광 흡수 피크를 포함하는 파장의 광을 조사하는 것이다.Further, in the method for connecting an electronic component according to the present invention, the electronic component is disposed on a transparent substrate mounted on a stage with a photocurable anisotropic conductive adhesive interposed therebetween, and the electronic component is attached to the transparent substrate by a crimping tool. In the method of connecting an electronic component that irradiates light from a light irradiator while pressing with a pressure, the photocurable anisotropic conductive adhesive contains a photopolymerizable compound, a photopolymerization initiator, and a light absorber, The light absorption peak wavelength is greater than the light absorption peak wavelength of the photopolymerization initiator and is separated by 20 nm or more, and the light irradiator is light of a wavelength including the light absorption peak of the photopolymerization initiator and the light absorption peak of the light absorber is to investigate
본 발명에 의하면, 이방성 도전 접착제로서, 광 중합 개시제 및 광 흡수제로서 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 20㎚ 이상 큰 것을 사용한다. 이로써, 광 중합 개시제와 광 흡수제의 각 자외선 흡수를 서로 저해하지 않고서, 각각 바인더 수지의 경화 반응의 진행과, 발열에 의한 바인더 수지의 용융을 실시할 수 있다. 따라서, 양호한 접속성을 갖는 접속체를 제조할 수 있다.According to the present invention, as the anisotropic conductive adhesive, as the photopolymerization initiator and the light absorber, a light absorption peak wavelength of the light absorber is 20 nm or more larger than the light absorption peak wavelength of the photopolymerization initiator. Thereby, without mutually inhibiting each ultraviolet absorption of a photoinitiator and a light absorber, advancing of the hardening reaction of binder resin and melting|fusing of binder resin by heat_generation|fever can be performed, respectively. Accordingly, it is possible to manufacture a connector having good connectivity.
도 1 은, 접속체의 일례로서 나타내는 액정 표시 패널의 단면도이다.
도 2 는, 액정 구동용 IC 와 투명 기판의 접속 공정을 나타내는 단면도이다.
도 3 은, 이방성 도전 필름을 나타내는 단면도이다.
도 4 는, 본 발명에 관련된 이방성 도전 필름의 광 중합 개시제와 광 흡수제의 광 흡수 피크 파장의 관계를 나타내는 그래프이다.
도 5 는, 실시예 및 비교예에 관련된 접속체 샘플의 휨량을 측정하는 공정을 나타내는 측면도이다.
도 6 은, 실시예 및 비교예에 관련된 접속체 샘플의 접속 저항을 측정하는 공정을 나타내는 사시도이다.
도 7 은, 액정 표시 패널의 단면도이다.
도 8 은, 액정 표시 패널의 투명 기판에 IC 칩을 접속하는 공정을 나타내는 단면도이다.1 : is sectional drawing of the liquid crystal display panel shown as an example of a connection body.
It is sectional drawing which shows the connection process of IC for a liquid crystal drive, and a transparent substrate.
3 : is sectional drawing which shows an anisotropic conductive film.
It is a graph which shows the relationship between the light absorption peak wavelength of the photoinitiator of the anisotropic conductive film which concerns on this invention, and a light absorber.
Fig. 5 is a side view showing a step of measuring the amount of warpage of a connector sample according to an Example and a Comparative Example.
Fig. 6 is a perspective view showing a step of measuring the connection resistance of a connector sample according to an Example and a Comparative Example.
7 is a cross-sectional view of a liquid crystal display panel.
8 is a cross-sectional view showing a step of connecting an IC chip to a transparent substrate of a liquid crystal display panel.
이하, 본 발명이 적용된 이방성 도전 접착제, 접속체의 제조 방법 및 전자 부품의 접속 방법에 관해서, 도면을 참조하면서 상세히 설명한다. 또, 본 발명은 이하의 실시형태만으로 한정되는 것이 아니라, 본 발명의 요지를 일탈하지 않는 범위 내에서 여러 가지 변경이 가능함은 물론이다. 또한, 도면은 모식적인 것으로, 각 치수의 비율 등은 현실과는 다른 경우가 있다. 구체적인 치수 등은 이하의 설명을 참작하여 판단해야 할 것이다. 또한, 도면 상호간에 있어서도 서로의 치수 관계나 비율이 다른 부분이 포함되어 있음은 물론이다.Hereinafter, the anisotropic conductive adhesive to which this invention was applied, the manufacturing method of a connection body, and the connection method of an electronic component are demonstrated in detail, referring drawings. In addition, this invention is not limited only to the following embodiment, It goes without saying that various changes are possible within the range which does not deviate from the summary of this invention. In addition, the drawings are schematic, and the ratio of each dimension, etc. may differ from reality. Specific dimensions and the like will have to be determined in consideration of the following description. In addition, it goes without saying that parts with different dimensional relationships or ratios are included even between the drawings.
이하에서는, 액정 표시 패널의 유리 기판에, 전자 부품으로서 액정 구동용의 IC 칩을 실장하는 이른바 COG (chip on glass) 실장을 실시하는 경우를 예로 설명한다. 이 액정 표시 패널 (10) 은, 도 1 에 나타내는 바와 같이, 유리 기판 등으로 이루어지는 2장의 투명 기판 (11, 12) 이 대향 배치되고, 이들 투명 기판 (11, 12) 이 프레임형상의 시일 (13) 에 의해서 서로 첩합되어 있다. 그리고, 액정 표시 패널 (10) 은, 투명 기판 (11, 12) 에 의해 둘러싸인 공간 내에 액정 (14) 이 봉입됨으로써 패널 표시부 (15) 가 형성되어 있다.Below, the case where so-called COG (chip on glass) mounting which mounts the IC chip for a liquid crystal drive as an electronic component on the glass substrate of a liquid crystal display panel is implemented is demonstrated as an example. As shown in Fig. 1, in this liquid
투명 기판 (11, 12) 은, 서로 대향하는 양 내측 표면에, ITO (산화인듐주석) 등으로 이루어지는 줄무늬형상의 한 쌍의 투명 전극 (16, 17) 이 서로 교차하도록 형성되어 있다. 그리고, 양 투명 전극 (16, 17) 은, 이들 양 투명 전극 (16, 17) 의 당해 교차 부위에 의해서 액정 표시의 최소 단위로서의 화소가 구성되도록 되어 있다.The
양 투명 기판 (11, 12) 중 일방의 투명 기판 (12) 은 타방의 투명 기판 (11) 보다 평면 치수가 크게 형성되어 있고, 이 크게 형성된 투명 기판 (12) 의 가장자리부 (12a) 에는, 전자 부품으로서 액정 구동용 IC (18) 가 실장되는 COG 실장부 (20) 가 형성되고, 또한 COG 실장부 (20) 의 외측 근방에는, 전자 부품으로서 액정 구동 회로가 형성된 플렉시블 기판 (21) 이 실장되는 FOG 실장부 (22) 가 형성되어 있다. 또, COG 실장부 (20) 에는, 투명 전극 (17) 의 단자부 (17a), 및 액정 구동용 IC (18) 에 형성된 IC 측 얼라인먼트 마크 (24) 와 중첩시키는 기판측 얼라인먼트 마크 (23) 가 형성되어 있다.One of the
또, 액정 구동용 IC (18) 는, 화소에 대하여 액정 구동 전압을 선택적으로 인가함으로써 액정의 배향을 부분적으로 변화시켜 소정의 액정 표시를 할 수 있도록 되어 있다. 또한, 도 2 에 나타내는 바와 같이, 액정 구동용 IC (18) 는, 이방성 도전 필름 (1) 을 통해서 투명 전극 (17) 의 단자부 (17a) 와 도통 접속되는 전극 단자 (19) 가 형성되어 있다. 전극 단자 (19) 는, 예를 들어 구리 범프나 금 범프, 또는 구리 범프에 금 도금을 실시한 것 등이 바람직하게 사용된다.In addition, the liquid
또한, 액정 구동용 IC (18) 는, 실장면 (18a) 에, 기판측 얼라인먼트 마크 (23) 와 중첩시킴으로써 투명 기판 (12) 에 대한 얼라인먼트를 실시하는 IC 측 얼라인먼트 마크 (24) 가 형성되어 있다. 또, 투명 기판 (12) 의 투명 전극 (17) 의 배선 피치나 액정 구동용 IC (18) 의 전극 단자 (19) 의 파인피치화가 진행되고 있는 점에서, 액정 구동용 IC (18) 과 투명 기판 (12) 은, 고정밀도의 얼라인먼트 조정이 요구되고 있다.Further, in the liquid
각 실장부 (20, 22) 에는, 투명 전극 (17) 의 단자부 (17a) 가 형성되어 있다. 단자부 (17a) 상에는, 광 중합 개시제를 함유하는 회로 접속용 접착제로서 이방성 도전 필름 (1) 을 사용하여 액정 구동용 IC (18) 나 플렉시블 기판 (21) 이 접속된다. 이방성 도전 필름 (1) 은 도전성 입자 (4) 를 함유하고 있어, 액정 구동용 IC (18) 나 플렉시블 기판 (21) 의 전극과 투명 기판 (12) 의 가장자리부 (12a) 에 형성된 투명 전극 (17) 의 단자부 (17a) 를, 도전성 입자 (4) 를 통해서 전기적으로 접속시키는 것이다. 이 이방성 도전 필름 (1) 은 자외선 경화형의 접착제로, 후술하는 자외선 조사기 (35) 에 의해 자외선이 조사됨과 함께 압착 헤드 (33) 에 의해 압압됨으로써, 유동화되어 도전성 입자 (4) 가 단자부 (17a) 와 액정 구동용 IC (18) 나 플렉시블 기판 (21) 의 각 전극과의 사이에서 눌려서 찌부러지고, 도전성 입자 (4) 가 눌려 찌부러든 상태로 경화된다. 이로써, 이방성 도전 필름 (1) 은, 투명 기판 (12) 과 액정 구동용 IC (18) 나 플렉시블 기판 (21) 을 전기적, 기계적으로 접속한다.A
또한, 양 투명 전극 (16, 17) 상에는, 소정의 러빙 처리가 실시된 배향막 (24) 이 형성되어 있고, 이 배향막 (24) 에 의해서 액정 분자의 초기 배향이 규제되도록 되어 있다. 그리고, 양 투명 기판 (11, 12) 의 외측에는 한 쌍의 편광판 (25, 26) 이 배치되어 있고, 이들 양 편광판 (25, 26) 에 의해서 백라이트 등의 광원 (도시 생략) 으로부터의 투과광의 진동 방향이 규제되도록 되어 있다.Further, on both
[광 경화계 이방성 도전 필름][Photocurable Anisotropic Conductive Film]
본 발명에서는, 광 경화계의 이방성 도전 필름 (ACF : Anisotropic Conductive Film) (1) 이 사용된다. 이방성 도전 필름 (1) 은 광 카티온계 또는 광 라디칼계 중 어느 것이어도 되고, 목적에 따라서 적절히 선택할 수 있다.In the present invention, a photocurable anisotropic conductive film (ACF: Anisotropic Conductive Film) (1) is used. The anisotropic
이방성 도전 필름 (1) 은, 도 3 에 나타내는 바와 같이, 기재가 되는 박리 필름 (2) 상에 도전성 입자 (4) 를 함유하는 바인더 수지층 (접착제층) (3) 이 형성된 것이다. 이방성 도전 필름 (1) 은, 도 2 에 나타내는 바와 같이, 액정 표시 패널 (10) 의 투명 기판 (12) 에 형성된 투명 전극 (17) 의 단자부 (17a) 와 액정 구동용 IC (18) 의 전극 단자 (19) 사이에 바인더 수지층 (3) 을 개재시킴으로써, 액정 표시 패널 (10) 과 액정 구동용 IC (18) 를 접속하고, 도통시킨다.As for the anisotropic
박리 필름 (2) 으로는, 이방성 도전 필름에 있어서 일반적으로 사용되고 있는, 예를 들어 폴리에틸렌테레프탈레이트 필름 등의 기재를 사용할 수 있다.As the
이방성 도전 필름 (1) 은, 바인더 수지층 (3) 중에 막형성 수지, 광 중합 개시제, 광 중합성 화합물, 광 흡수제 및 도전성 입자 (4) 를 함유한다. 이방성 도전 필름 (1) 은 광 흡수제를 함유함으로써, 후술하는 액정 구동용 IC (18) 의 접속 공정에 있어서, 광 흡수제가 자외선 조사에 의해 발열하여, 바인더 수지를 연화시킨다. 이로써, 이방성 도전 필름 (1) 은, 압착 헤드 (33) 에 의해서 도전성 입자 (4) 를 단자부 (17a) 와 전극 단자 (19) 사이에서 충분히 밀어 넣을 수 있다. 광 흡수제의 발열 온도는, 도전성 입자 (4) 를 밀어 넣기에 충분한 정도로 바인더 수지를 연화시킴과 함께, 투명 기판 (11, 12) 이나 액정 구동용 IC (18) 에 대하여 열 충격의 영향도 없는 소정의 온도, 예를 들어 80∼90℃ 정도가 바람직하며, 광 흡수제의 재료 선택에 의해서 적절히 설정할 수 있다.The anisotropic conductive film (1) contains film-forming resin, a photoinitiator, a photopolymerizable compound, a light absorber, and electroconductive particle (4) in the binder resin layer (3). Since the anisotropic
[광 카티온계] [optical cationic system]
광 카티온계의 이방성 도전 필름 (1) 은, 바인더 수지층 (3) 중에, 막형성 수지, 광 카티온 중합 개시제, 광 카티온 중합성 화합물 및 광 흡수제를 함유한다.The photocationic anisotropic
막형성 수지로는, 평균 분자량이 10000∼80000 정도의 수지가 바람직하다. 막형성 수지로는, 페녹시 수지, 에폭시 수지, 변형 에폭시 수지, 우레탄 수지, 등의 각종 수지를 들 수 있다. 그 중에서도, 막형성 상태, 접속 신뢰성 등의 관점에서 페녹시 수지가 특히 바람직하다.As the film-forming resin, a resin having an average molecular weight of about 10000 to 80000 is preferable. Various resins, such as a phenoxy resin, an epoxy resin, a modified epoxy resin, and a urethane resin, are mentioned as film-forming resin. Among them, a phenoxy resin is particularly preferable from the viewpoints of the film formation state and connection reliability.
광 카티온 중합 개시제로는, 예를 들어, 요오드늄염, 술포늄염, 방향족 디아조늄염, 포스포늄염, 셀레늄염 등의 오늄염이나 금속 아렌 착물, 실라놀/알루미늄착물 등의 착물 화합물, 벤조인토실레이트, o-니트로벤질토실레이트 등을 사용할 수 있다. 또한, 염을 형성할 때의 카운터 아니온으로는, 프로필렌카보네이트, 헥사플루오로안티모네이트, 헥사플루오로포스페이트, 테트라플루오로보레이트, 테트라키스(펜타플루오로페닐)보레이트 등이 사용된다.Examples of the photocationic polymerization initiator include onium salts such as iodonium salts, sulfonium salts, aromatic diazonium salts, phosphonium salts and selenium salts, metal arene complexes, complex compounds such as silanol/aluminum complexes, benzoin Tosylate, o-nitrobenzyltosylate, etc. can be used. In addition, as a counter anion at the time of salt formation, propylene carbonate, hexafluoroantimonate, hexafluoro phosphate, tetrafluoro borate, tetrakis (pentafluorophenyl) borate, etc. are used.
광 카티온 중합 개시제는, 1종만을 단독으로 사용해도 되고 2종 이상을 혼합하여 사용해도 된다. 그 중에서도, 방향족 술포늄염은 300㎚ 이상의 파장 영역에서도 자외선 흡수 특성을 가져, 경화성이 우수한 점에서 바람직하게 사용할 수 있다.A photocationic polymerization initiator may be used individually by 1 type, and may be used in mixture of 2 or more type. Among these, aromatic sulfonium salts have ultraviolet absorption characteristics even in a wavelength range of 300 nm or more, and can be preferably used from the viewpoint of excellent curability.
광 카티온 중합성 화합물은, 카티온종에 의해서 중합하는 관능기를 갖는 화합물로, 에폭시 화합물, 비닐에테르 화합물, 환상 에테르 화합물 등을 들 수 있다.A photocationically polymerizable compound is a compound which has a functional group superposed|polymerized by cationic species, An epoxy compound, a vinyl ether compound, a cyclic ether compound, etc. are mentioned.
에폭시 화합물로는, 1 분자 중에 2개 이상의 에폭시기를 갖는 화합물로, 예를 들어, 에피클로로히드린과 비스페놀 A 나 비스페놀 F 등으로부터 유도되는 비스페놀형 에폭시 수지나, 폴리글리시딜에테르, 폴리글리시딜에스테르, 방향족 에폭시 화합물, 지환식 에폭시 화합물, 노볼락형 에폭시 화합물, 글리시딜아민계 에폭시 화합물, 글리시딜에스테르계 에폭시 화합물 등을 들 수 있다.As an epoxy compound, it is a compound which has two or more epoxy groups in 1 molecule, For example, a bisphenol type epoxy resin derived from epichlorohydrin, bisphenol A, bisphenol F, etc., polyglycidyl ether, polyglycidyl Diyl ester, an aromatic epoxy compound, an alicyclic epoxy compound, a novolak-type epoxy compound, a glycidylamine type epoxy compound, a glycidyl ester type epoxy compound, etc. are mentioned.
광 흡수제는, 액정 구동용 IC (18) 의 접속 공정에 있어서 자외선이 조사됨으로써 발열하여, 바인더 수지를 용융시키는 것이다. 광 흡수제는, 광 중합 개시제로서 광 카티온 중합 개시제를 사용하는 경우에는, 예를 들어, 벤조트리아졸계, 트리아진계, 벤조페논계 등의 자외선 흡수제를 바람직하게 사용할 수 있고, 광 카티온 중합 개시제의 흡수 피크 파장이나, 자외선 조사기 (35) 의 분광 분포, 바인더 수지의 다른 성분과의 상용성, 자외선 흡수능 등에 따라서 적절히 선택된다. 또, 광 중합 개시제로서 카티온계 중합 개시제를 사용하는 경우에는, 자외선을 흡수함으로써 발열하는 광 흡수제로서, 광 라디칼 중합 개시제를 사용해도 된다.The light absorber generates heat by being irradiated with ultraviolet rays in the connection step of the liquid
[광 라디칼계] [optical radical system]
광 라디칼계의 이방성 도전 필름 (1) 은, 바인더 수지층 (3) 중에, 막형성 수지, 광 라디칼 중합 개시제, 광 라디칼 중합성 화합물 및 광 흡수제를 함유한다.The radical optical anisotropic
막형성 수지로는, 광 카티온계와 동일한 것을 사용할 수 있다.As a film-forming resin, the thing similar to a photocation system can be used.
광 라디칼 중합 개시제로는, 벤조인에틸에테르, 이소프로필벤조인에테르 등의 벤조인에테르, 벤질, 히드록시시클로헥실페닐케톤 등의 벤질케탈, 벤조페논, 아세토페논 등의 케톤류 및 그 유도체, 티오크산톤류, 비스이미다졸류 등이 있고, 이들 광 중합 개시제에 필요에 따라서 아민류, 황 화합물, 인 화합물 등의 증감제를 임의의 비로 첨가해도 된다. 이 때, 사용하는 광원의 파장이나 원하는 경화 특성 등에 따라서 최적의 광 개시제를 선택할 필요가 있다.Examples of the radical photopolymerization initiator include benzoin ethers such as benzoin ethyl ether and isopropyl benzoin ether, benzyl ketals such as benzyl and hydroxycyclohexyl phenyl ketone, ketones such as benzophenone and acetophenone, and derivatives thereof, thiok There exist santhones, bisimidazole, etc., You may add sensitizers, such as amines, a sulfur compound, and a phosphorus compound, to these photoinitiators in arbitrary ratios as needed. At this time, it is necessary to select an optimal photoinitiator according to the wavelength of the light source to be used, desired curing characteristics, and the like.
또한, 광 조사에 의해서 활성 라디칼을 발생하는 화합물로서 유기 과산화물계 경화제를 사용할 수 있다. 유기 과산화물로는, 디아실퍼옥사이드, 디알킬퍼옥사이드, 퍼옥시디카보네이트, 퍼옥시에스테르, 퍼옥시케탈, 하이드로퍼옥사이드, 실릴퍼옥사이드 등으로부터 1종 또는 2종 이상을 사용할 수 있다.In addition, an organic peroxide-based curing agent may be used as a compound that generates active radicals by irradiation with light. As the organic peroxide, one or two or more of diacyl peroxide, dialkyl peroxide, peroxydicarbonate, peroxyester, peroxyketal, hydroperoxide, silyl peroxide and the like can be used.
광 라디칼 중합성 화합물은, 활성 라디칼에 의해서 중합하는 관능기를 갖는 물질로, 아크릴산에스테르 화합물, 메타크릴산에스테르 화합물, 말레이미드 화합물 등을 들 수 있다.A radically photopolymerizable compound is a substance which has a functional group which superposes|polymerizes by an active radical, An acrylic acid ester compound, a methacrylic acid ester compound, a maleimide compound, etc. are mentioned.
광 라디칼 중합성 화합물은, 모노머, 올리고머 중 어느 것의 상태로 사용하는 것이 가능하고, 모노머와 올리고머를 병용하는 것도 가능하다.The radically photopolymerizable compound can be used in the state of any of a monomer and an oligomer, and it is also possible to use a monomer and an oligomer together.
아크릴산에스테르 화합물, 메타크릴산에스테르 화합물로는, 에폭시아크릴레이트 올리고머, 우레탄아크릴레이트 올리고머, 폴리에테르아크릴레이트 올리고머, 폴리에스테르아크릴레이트 올리고머 등의 광 중합성 올리고머 ; 트리메틸올프로판트리아크릴레이트, 폴리에틸렌글리콜디아크릴레이트, 폴리알킬렌글리콜디아크릴레이트, 펜타에리트리톨아크릴레이트, 2-시아노에틸아크릴레이트, 시클로헥실아크릴레이트, 디시클로펜테닐아크릴레이트, 디시클로펜테닐옥시에틸아크릴레이트, 2-(2-에톡시에톡시)에틸아크릴레이트, 2-에톡시에틸아크릴레이트, 2-에틸헥실아크릴레이트, n-헥실아크릴레이트, 2-히드록시에틸아크릴레이트, 히드록시프로필아크릴레이트, 이소보르닐아크릴레이트, 이소데실아크릴레이트, 이소옥틸아크릴레이트, n-라우릴아크릴레이트, 2-메톡시에틸아크릴레이트, 2-페녹시에틸아크릴레이트, 테트라히드로푸르푸릴아크릴레이트, 네오펜틸글리콜디아크릴레이트, 디펜타에리트리톨헥사아크릴레이트 등의 광 중합성 단관능 및 다관능 아크릴레이트 모노머 등을 들 수 있다. 이들은 1종 또는 2종류 이상을 혼합하여 사용해도 된다.As an acrylic acid ester compound and a methacrylic acid ester compound, Photopolymerizable oligomers, such as an epoxy acrylate oligomer, a urethane acrylate oligomer, a polyether acrylate oligomer, and a polyester acrylate oligomer; Trimethylolpropane triacrylate, polyethylene glycol diacrylate, polyalkylene glycol diacrylate, pentaerythritol acrylate, 2-cyanoethyl acrylate, cyclohexyl acrylate, dicyclopentenyl acrylate, dicyclophene Tenyloxyethyl acrylate, 2-(2-ethoxyethoxy)ethyl acrylate, 2-ethoxyethyl acrylate, 2-ethylhexyl acrylate, n-hexyl acrylate, 2-hydroxyethyl acrylate, hydroxy Roxypropyl acrylate, isobornyl acrylate, isodecyl acrylate, isooctyl acrylate, n-lauryl acrylate, 2-methoxyethyl acrylate, 2-phenoxyethyl acrylate, tetrahydrofurfuryl acrylate and photopolymerizable monofunctional and polyfunctional acrylate monomers such as , neopentyl glycol diacrylate and dipentaerythritol hexaacrylate. You may use these 1 type or in mixture of 2 or more types.
광 흡수제는, 예를 들어, 벤조트리아졸계, 트리아진계, 벤조페논계 등의 자외선 흡수제를 바람직하게 사용할 수 있고, 광 라디칼 중합 개시제의 흡수 피크 파장이나, 자외선 조사기 (35) 의 분광 분포, 바인더 수지의 다른 성분과의 상용성, 자외선 흡수능 등에 따라서 적절히 선택된다.As the light absorber, for example, a benzotriazole-based, triazine-based, or benzophenone-based ultraviolet absorber can be preferably used, and the absorption peak wavelength of the radical photopolymerization initiator, the spectral distribution of the
기타, 바인더 수지는, 실란 커플링제 등의 첨가제나 무기 필러를 함유시켜도 된다. 실란 커플링제로는, 에폭시계, 아미노계, 메르캅토·술피드계, 우레이드계 등을 들 수 있다. 실란 커플링제를 첨가함으로써, 유기 재료와 무기 재료의 계면에 있어서의 접착성이 향상된다.In addition, binder resin may contain additives, such as a silane coupling agent, and an inorganic filler. As a silane coupling agent, an epoxy type, an amino type, a mercapto sulfide type, a ureide type, etc. are mentioned. By adding a silane coupling agent, the adhesiveness in the interface of an organic material and an inorganic material improves.
도전성 입자 (4) 로는, 이방성 도전 필름에 있어서 사용되고 있는 공지된 어느 도전성 입자를 들 수 있다. 도전성 입자 (4) 로는, 예를 들어, 니켈, 철, 구리, 알루미늄, 주석, 납, 크롬, 코발트, 은, 금 등의 각종 금속이나 금속 합금의 입자, 금속 산화물, 카본, 그라파이트, 유리, 세라믹, 플라스틱 등의 입자의 표면에 금속을 코팅한 것, 또는, 이들 입자의 표면에 추가로 절연 박막을 코팅한 것 등을 들 수 있다. 수지 입자의 표면에 금속을 코팅한 것인 경우, 수지 입자로는, 예를 들어, 에폭시 수지, 페놀 수지, 아크릴 수지, 아크릴로니트릴·스티렌 (AS) 수지, 벤조구아나민 수지, 디비닐벤젠계 수지, 스티렌계 수지 등의 입자를 들 수 있다.As the
[광 중합 개시제와 광 흡수제의 광 흡수 피크 파장][Light absorption peak wavelength of photoinitiator and light absorber]
본 발명에 관련된 광 경화계의 이방성 도전 필름 (1) 은, 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어져 있다. 이방성 도전 필름 (1) 은, 후술하는 자외선 조사기 (35) 로부터 자외광이 조사되면, 광 중합 개시제는 자외광을 흡수하여 산이나 라디칼을 발생시킨다. 또한, 광 흡수제도 동일하게 자외광을 흡수하여, 발열한다.In the photocurable anisotropic
여기서, 광 중합 개시제의 광 흡수 피크와 광 흡수제의 광 흡수 피크가 근접해 있으면, 자외광의 흡수가 서로 저해되어, 경화 반응이나 발열이 불충분하게 된다. 그 결과, 바인더 수지가 용융되지 않고, 도전성 입자 (4) 의 밀어 넣기가 부족한 상태로 바인더 수지의 경화가 진행되며, 또한 접속 후의 경시 변화나 환경 변화에 의해서 도통 저항이 상승할 우려가 있다.Here, when the light absorption peak of a photoinitiator and the light absorption peak of a light absorber are close, absorption of an ultraviolet light will mutually be inhibited, and a hardening reaction and heat_generation|fever will become inadequate. As a result, binder resin does not melt, hardening of binder resin advances in the state in which pushing of the
또한, 광 흡수제 및 광 중합 개시제의 각 광 흡수 피크 파장은 일반적으로 도 4 에 나타내는 프로파일을 갖는 점에서, 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 작으면, 20㎚ 이상 떨어져 있어도, 피크 이외에 있어서의 흡수 파장의 중복 범위가 커지고, 자외광의 흡수가 서로 저해되어, 경화 반응이나 발열이 불충해지기 때문이다.In addition, since the respective light absorption peak wavelengths of the light absorber and the photopolymerization initiator generally have the profile shown in Fig. 4, when the light absorption peak wavelength of the light absorber is smaller than the light absorption peak wavelength of the photopolymerization initiator, 20 nm or more Even if separated, the overlapping range of absorption wavelengths in other than a peak becomes large, it is because absorption of an ultraviolet light is mutually inhibited, and hardening reaction and heat_generation|fever become inadequate.
한편, 광 흡수제 및 광 중합 개시제로서, 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 20㎚ 이상 큰 것을 사용함으로써, 광 중합 개시제와 광 흡수제의 각 자외선 흡수를 저해하지 않고, 각각 바인더 수지의 경화 반응의 진행과, 발열에 의한 바인더 수지의 용융을 실시할 수 있다.On the other hand, as the light absorber and the photopolymerization initiator, the light absorption peak wavelength of the light absorber is 20 nm or more larger than the light absorption peak wavelength of the photopolymerization initiator, without inhibiting each ultraviolet absorption of the photopolymerization initiator and the light absorber, Each of the curing reaction of the binder resin and the melting of the binder resin by heat generation can be performed.
또한, 본 발명에 관련된 광 중합 개시제의 광 흡수 피크 파장은 290㎚∼330㎚ 이고, 광 흡수제의 광 흡수 피크 파장은 320㎚∼360㎚ 인 것이 바람직하다.Moreover, it is preferable that the light absorption peak wavelength of the photoinitiator which concerns on this invention is 290 nm - 330 nm, and it is preferable that the light absorption peak wavelength of a light absorber is 320 nm - 360 nm.
예를 들어, 자외광의 흡수 피크가 310㎚ 인 광 카티온 중합 개시제를 사용하고, 자외광의 흡수 피크가 340∼360㎚ 의 자외선 흡수제를 사용함으로써, 광 카티온 중합 개시제와 자외선 흡수제가 서로 자외광의 흡수를 서로 저해하지 않고, 경화 반응이나 발열을 촉진할 수 있다.For example, by using a photocationic polymerization initiator having an absorption peak of ultraviolet light of 310 nm and an ultraviolet absorber having an absorption peak of ultraviolet light of 340 to 360 nm, the photocationic polymerization initiator and the ultraviolet absorber are mutually independent. Curing reaction and heat generation can be accelerated|stimulated, without mutually inhibiting absorption of external light.
[접속 장치] [connection device]
이어서, 이방성 도전 필름 (1) 을 통해서 액정 구동용 IC (18) 가 투명 기판 (12) 에 접속된 접속체의 제조 공정에 사용되는 접속 장치 (30) 에 대해서 설명한다.Next, the
도 1 에 나타내는 바와 같이, 접속 장치 (30) 는, 광 투과성을 갖는 스테이지 (31) 와, 스테이지 (31) 상에 재치된 투명 기판 (12) 에 이방성 도전 필름 (1) 을 사이에 두고 탑재된 액정 구동용 IC (18) 를 가압하는 압착 헤드 (33) 와, 스테이지 (31) 의 이면측에 형성된 자외선 조사기 (35) 를 갖는다.As shown in FIG. 1 , the
스테이지 (31) 는, 예를 들어 석영 등의 광 투과성을 갖는 재료에 의해 형성된다. 또한, 스테이지 (31) 는, 표면에 투명 기판 (12) 의 가장자리부 (12a) 가 재치됨과 함께, 압착 헤드 (33) 와 대치되고, 이면에는 자외선 조사기 (35) 가 배치되어 있다.The
압착 헤드 (33) 는, 투명 기판 (12) 에 이방성 도전 필름 (1) 을 사이에 두고 탑재된 액정 구동용 IC (18) 를 압압하는 것으로, 도시하지 않은 헤드 이동 기구에 유지됨으로써, 스테이지 (31) 에 접근, 이간이 자유롭게 되어 있다.The crimping
자외선 조사기 (35) 는, 스테이지 (31) 의 이면측에서부터 투명 기판 (12) 의 단자부 (17a) 에 형성된 이방성 도전 필름 (1) 에 대하여 자외광을 조사함으로써, 광 흡수제를 발열시킴과 함께, 투명 전극 (17) 의 단자부 (17a) 와 액정 구동용 IC (18) 의 전극 단자 (19) 에 의해 도전성 입자 (4) 를 협지한 상태로 바인더 수지를 경화시켜, 액정 구동용 IC (18) 를 투명 기판 (12) 의 단자부 (17a) 에 도통 접속하는 것이다.The
자외선 조사기 (35) 는, 광 중합 개시제의 흡수 피크 파장역에 최대 발광 파장을 갖는 자외선 램프를 사용할 수 있다. 또한, 자외선 조사기 (35) 는, 광 중합 개시제의 흡수 피크 파장역 및 광 흡수제의 흡수 피크 파장역에 피크를 갖는 분광 분포를 가진 수은 램프나, 광 중합 개시제 및 광 흡수제의 양 흡수 피크 파장을 포함하는 파장역에 걸쳐서 자외선을 조사하는 메탈 할라이드 램프 등을 사용할 수 있다. 또한, 자외선 조사기 (35) 는, 광 중합 개시제의 흡수 피크 파장역에 피크를 갖는 LED 램프와 광 흡수제의 흡수 피크 파장역에 피크를 갖는 LED 램프를 병용해도 된다.The
[접속 공정] [Connection process]
이어서, 상기 서술한 접속 장치 (30) 를 사용한 액정 구동용 IC (18) 의 접속 공정에 대해서 설명한다. 먼저, 투명 기판 (12) 을 가(假)부착용의 스테이지 상에 재치하고, 이방성 도전 필름 (1) 을 투명 전극 (17) 상에 가압착한다. 이방성 도전 필름 (1) 을 가압착하는 방법은, 투명 기판 (12) 의 투명 전극 (17) 상에, 바인더 수지층 (3) 이 투명 전극 (17) 측이 되도록 이방성 도전 필름 (1) 을 배치한다.Next, the connection process of the
그리고, 바인더 수지층 (3) 을 투명 전극 (17) 상에 배치한 후, 박리 필름 (2) 측에서부터 바인더 수지층 (3) 을 가부착용의 열 압착 헤드로 가열 및 가압하고, 박리 필름 (2) 을 바인더 수지층 (3) 으로부터 박리함으로써, 바인더 수지층 (3) 만이 투명 전극 (17) 상에 가부착된다. 가부착용의 열 압착 헤드에 의한 가압착은, 박리 필름 (2) 의 상면을 약간의 압력 (예를 들어 0.1㎫∼2㎫ 정도) 으로 투명 전극 (17) 측으로 압압하면서 가열 (예를 들어 70∼100℃ 정도) 한다.Then, after the
다음으로, 투명 기판 (12) 이 스테이지 (31) 상에 재치되고, 투명 기판 (12) 의 투명 전극 (17) 과 액정 구동용 IC (18) 의 전극 단자 (19) 가 바인더 수지층 (3) 을 사이에 두고 대향하도록, 액정 구동용 IC (18) 가 배치된다.Next, the
다음으로, 스테이지 (31) 의 이면측에서부터 자외선 조사기 (35) 에 의해 소정의 자외광을 조사함과 함께, 액정 구동용 IC (18) 의 상면을 압착 헤드 (33) 에 의해, 소정의 압력으로 압압한다. 자외광은, 스테이지 (31), 투명 기판 (12) 을 투과하여 바인더 수지층 (3) 에 입사되고, 광 중합 개시제 및 광 흡수제에 흡수된다. 광 중합 개시제는 자외광을 흡수함으로써 산 또는 라디칼을 발생하고, 이것에 의해 바인더 수지의 경화 반응이 진행된다. 또한, 광 흡수제는 자외광을 흡수함으로써 소정의 온도로 발열하여 (예를 들어 80∼90℃), 바인더 수지를 용융시킨다.Next, while irradiating predetermined ultraviolet light with the
즉, 본 접속 공정에서는, 광 흡수제의 발열에 의해 바인더 수지를 용융시키고, 이 상태로, 압착 헤드 (33) 에 의해 압압함으로써, 투명 전극 (17) 의 단자부 (17a) 와 액정 구동용 IC (18) 의 전극 단자 (19) 사이로부터 바인더 수지를 유출시킴과 함께, 도전성 입자 (4) 를 충분히 밀어 넣을 수 있다. 그리고, 투명 전극 (17) 의 단자부 (17a) 와 액정 구동용 IC (18) 의 전극 단자 (19) 사이에 도전성 입자 (4) 가 협지된 상태로 바인더 수지가 경화된다. 따라서, 본 접속 공정에서는, 실온하에서 액정 구동용 IC (18) 를 가압함으로써, 휨의 영향이나 액정 구동용 IC (18) 등의 전자 부품에 대한 열 충격의 영향을 누르면서, 액정 구동용 IC (18) 와의 전기적 도통성 및 기계적 접속성이 양호한 접속체를 제조할 수 있다.That is, in this connection step, the binder resin is melted by the heat of the light absorber, and in this state, the pressure-
이 때, 전술한 바와 같이 이방성 도전 필름 (1) 은, 광 중합 개시제 및 광 흡수제로서, 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 20㎚ 이상 큰 것을 사용한다. 이로써, 광 중합 개시제와 광 흡수제의 각 자외선 흡수를 서로 저해하지 않고, 각각 바인더 수지의 경화 반응의 진행과, 발열에 의한 바인더 수지의 용융을 실시할 수 잇다.At this time, as described above, as the photopolymerization initiator and the light absorber, the anisotropic
또한, 광 흡수제의 발열은 투명 기판 (12) 과 액정 구동용 IC (18) 에 동등하게 전달되기 때문에, 압착 헤드 (33) 에 의해서 가열하는 경우와 달리, 투명 기판 (12) 과 액정 구동용 IC (18) 사이에 열 구배가 발생하는 일도 없고, 가열 온도 차에서 기인하는 휨의 발생, 휨에 따르는 표시 불균일이나 전자 부품의 접속 불량 등의 문제가 대폭 개선되어 있다.Further, since the heat of the light absorber is equally transmitted to the
또, 자외선 조사기 (35) 에 의한 조사 시간이나 조도, 총 조사량은, 바인더 수지의 조성이나, 압착 헤드 (33) 에 의한 압력 및 시간으로부터, 바인더 수지의 경화 반응의 진행과 압착 헤드 (33) 에 의한 밀어 넣기에 따른 접속 신뢰성, 접착 강도의 향상을 꾀하는 조건을 적절히 설정한다.In addition, the irradiation time, illuminance, and total irradiation amount by the
그 후, 접속 장치 (30) 는, 압착 헤드 (33) 를 스테이지 (31) 의 상방으로 이동시키는 것에 의해, 액정 구동용 IC (18) 의 본 압착 공정을 종료한다.Then, the
액정 구동용 IC (18) 를 투명 기판 (12) 의 투명 전극 (17) 상에 접속한 후, 동일하게 하여 플렉시블 기판 (21) 이 투명 기판 (12) 의 투명 전극 (17) 상에 실장되는 이른바 FOG (film on glass) 실장이 행하여진다. 이 때도, 마찬가지로 이방성 도전 필름 (1) 을 사용함으로써, 자외선 조사기 (35) 로부터의 자외광을 흡수하여, 광 흡수제의 발열에 의해서 바인더 수지의 용융과 산 또는 라디칼의 발생에 의한 경화 반응을 진행시킬 수 있다.After the liquid
이로써, 이방성 도전 필름 (1) 을 통해서 투명 기판 (12) 과 액정 구동용 IC (18) 나 플렉시블 기판 (21) 이 접속된 접속체를 제조할 수 있다. 또, 이들 COG 실장과 FOG 실장은, 동시에 실시해도 된다.Thereby, the connection body to which the
이상, 액정 구동용 IC 를 직접 액정 표시 패널의 유리 기판 상에 실장하는 COG 실장, 및 플렉시블 기판을 직접 액정 표시 패널의 기판 상에 실장하는 FOG 실장을 예로 설명하였지만, 본 기술은, 광 경화형의 접착제를 사용한 접속체의 제조 공정이면, 투명 기판 상에 전자 부품을 실장하는 것 이외의 각종 접속에도 적용할 수 있다.In the above, COG mounting, in which the liquid crystal driving IC is directly mounted on the glass substrate of the liquid crystal display panel, and FOG mounting, in which the flexible substrate is directly mounted on the substrate of the liquid crystal display panel, have been described as examples. As long as it is a manufacturing process of a connection body using
[기타] [etc]
또한, 본 발명은, 상기 서술한 자외선 경화형의 도전성 접착제를 사용하는 것 외에, 예를 들어 적외광 등의 다른 파장의 광선에 의해서 경화되는 광 경화형의 도전성 접착제를 사용할 수도 있다.Moreover, in this invention, besides using the above-mentioned ultraviolet curable conductive adhesive, for example, the photocurable conductive adhesive hardened|cured by the light rays of other wavelengths, such as infrared light, can also be used.
상기에서는 도전성의 접착제로서 필름 형상을 갖는 이방성 도전 필름 (1) 에 대해서 설명하였지만, 페이스트상이어도 문제는 없다. 또한, 바인더 수지층 (3) 은, 도전성 입자 (4) 를 함유하지 않은 바인더 수지로 이루어지는 절연성 접착제층과 도전성 입자 (4) 를 함유한 바인더 수지로 이루어지는 도전성 접착제층이 적층된 구성이어도 된다. 이 경우, 절연성 접착제층 및 도전성 접착제층에, 각각 흡수 피크 파장이 어긋나 있는 광 흡수제 및 광 중합 개시제를 함유시키는 것이 바람직하다.Although the anisotropic
또한, 본 발명은, 도전성 입자 (4) 를 함유하지 않은 바인더 수지층으로 이루어지는 절연성 접착 필름, 및 도전성 입자 (4) 를 함유하지 않은 페이스트상의 바인더 수지를 사용한 절연성 접착 페이스트에 의한 접속 공정에 사용해도 된다. 본 발명에 관련된 접착제는, 광 중합 개시제 및 광 흡수제를 함유하는 회로 접속용 접착제이면, 도전성 입자 (4) 의 유무나, 필름이나 페이스트 등의 형태는 상관하지 않는다.In addition, the present invention may be used in a connection process using an insulating adhesive film comprising a binder resin layer containing no conductive particles (4) and an insulating adhesive paste using a paste-like binder resin not containing conductive particles (4). do. As long as the adhesive agent which concerns on this invention is the adhesive agent for circuit connection containing a photoinitiator and a light absorber, the presence or absence of the
또, 본 접속 공정에서는, 스테이지 (31) 에 히터 등의 가열 기구를 형성하여 광 흡수제에 의한 발열 온도 이하의 온도로 투명 기판 (12) 을 가열해도 된다. 또, 본 접속 공정에서는, 압착 헤드 (33) 에 의해서 광 흡수제에 의한 발열 온도 이하의 온도로 액정 구동용 IC (18) 를 가열해도 된다. 이로써, 광 흡수제의 발열과 더불어서 바인더 수지층 (3) 을 충분히 용융시켜, 단자부 (17a) 와 전극 단자 (19) 에서 확실히 도전성 입자 (4) 를 밀어 넣어, 접속성을 향상시킬 수 있다.Moreover, in this connection process, you may provide heating mechanisms, such as a heater, in the
실시예Example
이어서, 본 기술의 실시예에 대해서 설명한다. 본 실시예는, 이방성 도전 필름의 배합 및 경화 조건을 다르게 하여 제조한 투명 기판과 IC 칩의 접속체 샘플에 대해서, IC 칩과 투명 기판의 접속상태를 도통 저항값 (Ω) 및 휨량에 의해서 평가하였다.Next, an embodiment of the present technology will be described. In this example, the connection state of the IC chip and the transparent substrate is evaluated by the conduction resistance value (Ω) and the amount of warpage for a sample of a transparent substrate and an IC chip connection body manufactured by varying the mixing and curing conditions of the anisotropic conductive film. did
접속에 사용하는 접착제로서, 광 카티온 중합 개시제와 카티온 중합성 화합물을 함유하는 바인더 수지층으로 이루어지는 이방성 도전 필름을 준비하였다.As an adhesive agent used for connection, the anisotropic conductive film which consists of a binder resin layer containing a photocationic polymerization initiator and a cationically polymerizable compound was prepared.
평가 소자로서, 외형 ; 1.8㎜×34㎜, 두께 0.5㎜ 이고, 도통 측정용 배선을 형성한 평가용 IC 를 사용하였다.As an evaluation element, Appearance; An evaluation IC having a thickness of 1.8 mm x 34 mm and a thickness of 0.5 mm in which wiring for measuring continuity was formed was used.
평가용 IC 가 접속되는 평가 기재로서, 두께 0.5㎜ 의 ITO 코팅 글래스를 사용하였다.As an evaluation base material to which the evaluation IC is connected, ITO-coated glass having a thickness of 0.5 mm was used.
이 유리 기판에 이방성 도전 필름을 사이에 두고 평가용 IC 를 배치하고, 압착 툴 (10.0㎜×40.0㎜) 에 의해 가압함과 함께, 자외선 조사에 의해 접속함으로써, 접속체 샘플을 형성하였다. 압착 툴은 가압면에 두께 0.05㎜ 의 불소 수지 가공이 실시되어 있다. 또한, 자외선 조사기 (SP-9 : 우시오 전기 주식회사 제) 의 조도는, 365㎚ 에서 300mW/㎠, 310㎚ 에서 210mW/㎠, 자외선의 조사 크기는, 폭 약 4.0㎜×길이 약 44.0㎜ 로 하였다.A connector sample was formed by placing the IC for evaluation on this glass substrate with an anisotropic conductive film interposed therebetween, pressing with a crimping tool (10.0 mm x 40.0 mm) and connecting by ultraviolet irradiation. The crimping tool is subjected to processing with a fluororesin having a thickness of 0.05 mm on the pressing surface. In addition, the illuminance of the ultraviolet irradiator (SP-9: manufactured by Ushio Electric Co., Ltd.) was 300 mW/
[실시예 1] [Example 1]
실시예 1 에서는, 이방성 도전 필름의 바인더 수지층으로서, In Example 1, as a binder resin layer of the anisotropic conductive film,
페녹시 수지 (YP-70 : 신닛테츠 스미토모 화학 주식회사 제) ; 20질량부Phenoxy resin (YP-70: Shin-Nitetsu Sumitomo Chemical Co., Ltd. make); 20 parts by mass
액상 에폭시 수지 (EP828 : 미쓰비시 화학 주식회사 제) ; 30질량부Liquid epoxy resin (EP828: Mitsubishi Chemical Co., Ltd. make); 30 parts by mass
고형 에폭시 수지 (YD014 : 신닛테츠 스미토모 화학 주식회사 제) ; 20질량부Solid epoxy resin (YD014: made by Shin-Nitetsu Sumitomo Chemical Co., Ltd.); 20 parts by mass
도전성 입자 (AUL704 : 세키스이 화학 공업 주식회사 제) ; 30질량부Electroconductive particle (AUL704: Sekisui Chemical Industry Co., Ltd. make); 30 parts by mass
광 카티온 중합 개시제 (SP-170 : ADEKA 주식회사 제) ; 5질량부Photocationic polymerization initiator (SP-170: ADEKA Corporation make); 5 parts by mass
광 흡수제 (LA-36 : ADEKA 주식회사 제) ; 5질량부light absorber (LA-36: manufactured by ADEKA Corporation); 5 parts by mass
를 혼합시킨 수지 용액을 작성하고, 이 수지 용액을 PET 필름 상에 도포, 건조시켜, 두께 20㎛ 의 필름상으로 성형한 것을 사용하였다.to prepare a resin solution mixed with , the resin solution was coated on a PET film, dried, and molded into a film having a thickness of 20 μm was used.
광 카티온 중합 개시제 (SP-170) 의 흡수 피크 파장은 약 310㎚, 광 흡수제 (LA-36) 의 흡수 피크 파장은 약 340㎚ 로, 그 차는 30㎚ 이다.The absorption peak wavelength of the photocationic polymerization initiator (SP-170) is about 310 nm, and the absorption peak wavelength of the light absorber (LA-36) is about 340 nm, and the difference is 30 nm.
압착 툴의 압압 조건은, 실온하에서 70㎫, 5초이다. 자외선 조사기의 조사 시간은 5초이다.The pressing conditions of the crimping tool are 70 MPa and 5 seconds under room temperature. The irradiation time of the ultraviolet irradiator is 5 seconds.
[실시예 2] [Example 2]
실시예 2 에서는, 바인더 수지층에 광 흡수제 (LA-31 : ADEKA 주식회사 제) 를 5질량부 배합한 것 이외에는, 실시예 1 과 동일한 배합의 이방성 도전 필름을 사용하였다.In Example 2, the anisotropic conductive film of the same mixing|blending as Example 1 was used except having mix|blended 5 mass parts of light absorbers (LA-31:made by ADEKA Corporation) with the binder resin layer.
광 카티온 중합 개시제 (SP-170) 의 흡수 피크 파장은 약 310㎚, 광 흡수제 (LA-31) 의 흡수 피크 파장은 345㎚ 로, 그 차는 35㎚ 이다.The absorption peak wavelength of the photocationic polymerization initiator (SP-170) is about 310 nm, and the absorption peak wavelength of the light absorber (LA-31) is 345 nm, and the difference is 35 nm.
압착 툴의 압압 조건 및 자외선 조사기의 조사 시간은 실시예 1 과 동일하다.The pressing conditions of the crimping tool and the irradiation time of the ultraviolet irradiator were the same as in Example 1.
[실시예 3] [Example 3]
실시예 3 에서는, 바인더 수지층에 광 흡수제로서 광 라디칼 중합 개시제 (OXE1 : BASF 사 제조) 를 5질량부 배합한 것 이외에는, 실시예 1 과 동일한 배합의 이방성 도전 필름을 사용하였다.In Example 3, the anisotropic conductive film of the same mixing|blending as Example 1 was used except having mix|blended 5 mass parts of optical radical polymerization initiators (OXE1:made by BASF) as a light absorber to the binder resin layer.
광 카티온 중합 개시제 (SP-170) 의 흡수 피크 파장은 약 310㎚, 광 흡수제 (OXE01) 의 흡수 피크는 330㎚ 로, 그 차는 20㎚ 이다.The absorption peak wavelength of the photocationic polymerization initiator (SP-170) is about 310 nm, and the absorption peak of the light absorber (OXE01) is 330 nm, and the difference is 20 nm.
압착 툴의 압압 조건 및 자외선 조사기의 조사 시간은 실시예 1 과 동일하다.The pressing conditions of the crimping tool and the irradiation time of the ultraviolet irradiator were the same as in Example 1.
[비교예 1] [Comparative Example 1]
비교예 1 에서는, 바인더 수지층에 광 흡수제를 배합하지 않은 것 이외에는, 실시예 1 과 동일한 배합의 이방성 도전 필름을 사용하였다.In Comparative Example 1, the anisotropic conductive film of the same composition as in Example 1 was used except that the light absorber was not added to the binder resin layer.
압착 툴의 압압 조건 및 자외선 조사기의 조사 시간은 실시예 1 과 동일하다.The pressing conditions of the crimping tool and the irradiation time of the ultraviolet irradiator were the same as in Example 1.
[비교예 2] [Comparative Example 2]
비교예 2 에서는, 바인더 수지층에 광 흡수제 (LA-46 : ADEKA 주식회사 제) 를 5질량부 배합한 것 이외에는, 실시예 1 과 동일한 배합의 이방성 도전 필름을 사용하였다.In Comparative Example 2, the anisotropic conductive film of the same composition as in Example 1 was used except that 5 parts by mass of a light absorber (LA-46: manufactured by ADEKA Corporation) was blended into the binder resin layer.
광 카티온 중합 개시제 (SP-170) 의 흡수 피크 파장은 약 310㎚, 광 흡수제 (LA-46) 의 흡수 피크 파장은 약 290㎚ 로, 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 작고, 그 차는 20㎚ 이다.The absorption peak wavelength of the photocationic polymerization initiator (SP-170) is about 310 nm, the absorption peak wavelength of the light absorber (LA-46) is about 290 nm, and the light absorption peak wavelength of the light absorber is the light absorption of the photopolymerization initiator. smaller than the peak wavelength, and the difference is 20 nm.
압착 툴의 압압 조건 및 자외선 조사기의 조사 시간은 실시예 1 과 동일하다.The pressing conditions of the crimping tool and the irradiation time of the ultraviolet irradiator were the same as in Example 1.
[비교예 3] [Comparative Example 3]
비교예 3 에서는, 압착 툴의 압압 조건을 100℃, 70㎫, 5초로 한 것 이외에는, 비교예 1 과 동일한 조건으로 하였다.In Comparative Example 3, the same conditions as in Comparative Example 1 were used except that the pressing conditions of the crimping tool were 100° C., 70 MPa, and 5 seconds.
[휨의 측정] [Measurement of warpage]
휨의 측정 방법은, 촉침식 표면 조도계 (SE-3H : 주식회사 코사카 연구소 제) 를 사용하여, 도 5 에 나타내는 바와 같이, 접합체 샘플의 유리 기판 (40) 하면으로부터 촉침 (41) 을 스캔하여, 평가용 IC 의 접속 후의 유리 기판면의 휨량 (㎛) 을 측정하였다.As shown in FIG. 5 using a stylus type surface roughness meter (SE-3H: manufactured by Kosaka Laboratories Co., Ltd.), the
[도통 저항의 측정] [Measurement of conduction resistance]
실시예 1, 2, 비교예 1∼3 에 관련된 접속체에 대해서, 디지털 멀티 미터를 사용하여, 접속 초기 및 신뢰성 시험 후 에 있어서의 도통 저항 (Ω) 을 측정하였다. 도통 저항값의 측정은, 도 6 에 나타내는 바와 같이, 평가용 IC 의 범프 (42) 와 접속된 ITO 코팅 글래스의 배선 (43) 에 디지털 멀티 미터를 접속하고, 이른바 4단자법으로 전류 2mA 를 흘렸을 때의 도통 저항값을 측정하였다. 신뢰성 시험의 조건은, 85℃ 85% RH500hr 로 하였다.For the connected bodies according to Examples 1 and 2 and Comparative Examples 1 to 3, the conduction resistance (Ω) was measured at the initial stage of connection and after the reliability test using a digital multimeter. For the measurement of the conduction resistance value, as shown in FIG. 6 , a digital multimeter is connected to the ITO-coated
표 1 에 나타내는 바와 같이, 실시예 1∼3 에서는, 비교예 1 과 동등한 휨량이지만, 광 흡수제를 함유시킨 실시예 1∼3 쪽이 비교예 1 보다 초기 접속 저항 및 신뢰성 시험 후의 접속 저항이 모두 낮고, 양호한 접속성을 나타내었다. 이는, 실시예 1∼3 에 있어서는, 광 흡수제의 발열에 의해 바인더 수지층이 용융된 상태로 압압하였기 때문에, 바인더 수지를 배제함으로써 도전성 입자를 충분히 밀어 넣을 수 있고, 이 상태로 경화시킬 수 있는 것에 따른다. 한편, 비교예 1 에서는, 실온하에서 압착하였기 때문에 전극 단자 사이로부터의 바인더 수지의 배제가 진행되지 않어, 도전성 입자를 충분히 밀어 넣을 수 없다. 그 때문에, 실시예 1 및 2 와 비교하여 접속 초기에 있어서 도통 저항이 높아지고, 신뢰성 시험 후에 있어서는 더욱 도통 저항이 상승하였다.As shown in Table 1, in Examples 1 to 3, although the amount of deflection is equivalent to that of Comparative Example 1, Examples 1 to 3 containing a light absorber had lower initial connection resistance and connection resistance after the reliability test than Comparative Example 1. , showed good connectivity. This is because, in Examples 1 to 3, the binder resin layer was pressed in a molten state due to the heat of the light absorber, so that by removing the binder resin, the conductive particles can be sufficiently pushed in and cured in this state. follow On the other hand, in the comparative example 1, since it crimped|bonded under room temperature, exclusion of binder resin from between electrode terminals does not advance, but electroconductive particle cannot fully be pushed in. Therefore, compared with Examples 1 and 2, conduction|electrical_connection resistance became high in a connection initial stage, and after a reliability test, conduction resistance rose further.
비교예 2 에서는, 광 흡수제와 광 카티온 중합 개시제의 각 흡수 피크 파장의 차가 20㎚ 이기는 하지만, 광 흡수제의 광 흡수 피크 파장이 광 중합 개시제의 광 흡수 피크 파장보다 작기 때문에, 흡수 파장이 넓은 범위에서 중복되어, 광 카티온 중합 개시제에 의한 자외광의 흡수가 광 흡수제에 의해서 방해되고, 경화 반응의 진행이 불충분해졌다. 그 때문에, 휨량은 크게 저감하였지만, 초기 접속 저항이 높고, 신뢰성 시험 후에 있어서는 도통 저항이 크게 상승하였다.In Comparative Example 2, although the difference between the respective absorption peak wavelengths of the light absorber and the photocationic polymerization initiator is 20 nm, since the light absorption peak wavelength of the light absorber is smaller than the light absorption peak wavelength of the photopolymerization initiator, the absorption wavelength is in a wide range , the absorption of ultraviolet light by the photocationic polymerization initiator was hindered by the light absorber, and the progress of the curing reaction became insufficient. Therefore, although the amount of warpage was greatly reduced, the initial connection resistance was high, and the conduction resistance increased greatly after the reliability test.
비교예 3 에서는, 압착 툴에 의해서 평가용 IC 를 가열 압압하면서 자외선을 조사하고 있다. 그 때문에, 압착 툴에 의한 열이 평가용 IC 로 치우쳐 전달되어, 압착 툴이 분리된 후에 급격히 냉각되면, 평가용 IC 측의 변형이 유리 기판보다 커졌다. 그리고 비교예 3 에서는, 이 변형량의 차를 바인더 수지층에 의해서도 다 흡수하지 못하고, 휨량이 커졌다.In the comparative example 3, the ultraviolet-ray is irradiated, heating and pressing the IC for evaluation with the crimping|compression-bonding tool. Therefore, when the heat by the crimping tool was transmitted biasedly to the IC for evaluation and cooled rapidly after the crimping tool was removed, the strain on the side of the crimping tool was larger than that of the glass substrate. And in Comparative Example 3, the difference in the amount of deformation was not fully absorbed by the binder resin layer, and the amount of warpage was increased.
한편, 실시예 1∼3 에서는, 광 흡수제가 자외선을 흡수함으로써 바인더 수지층이 발열하기 때문에, 평가용 IC 와 유리 기판에 거의 같은 열량이 가해진다. 그 때문에, 평가용 IC 와 유리 기판의 변형량은 거의 동일하고, 바인더 수지층에 의해서 변형량의 차를 흡수할 수 있기 때문에, 휨량을 비교적 작게 할 수 있다.On the other hand, in Examples 1 to 3, since the binder resin layer generates heat when the light absorber absorbs ultraviolet rays, substantially the same amount of heat is applied to the evaluation IC and the glass substrate. Therefore, since the amount of deformation|transformation of IC for evaluation and a glass substrate is substantially the same, and since the difference in deformation amount can be absorbed with a binder resin layer, curvature amount can be made comparatively small.
실시예 1 과 실시예 2 를 비교하면, 실시예 2 는 실시예 1 보다 저저항화가 꾀해지고 있다. 이는, 실시예 2 에서는, 광 흡수제의 흡광도가 높아 실시예 1 보다도 높은 반응열을 방출하고 있기 때문에, 바인더 수지층의 용융이 보다 현저히 진행된 것에 따른다. 이로써, 실시예 2 에서는 도전성 입자가 찌부러지기 쉬워, 실시예 1 에 비하여 보다 저저항화가 꾀해진 것이다.Comparing Example 1 and Example 2, Example 2 is aimed at lowering the resistance than Example 1. This is due to the fact that, in Example 2, the light absorbent has a high absorbance and thus higher heat of reaction is emitted than in Example 1, so that the melting of the binder resin layer has progressed more remarkably. Thereby, in Example 2, it is easy to crush electroconductive particle, Comparing with Example 1, resistance reduction is attained more.
또한, 실시예 3 에서는, 광 흡수제로서 광 라디칼 중합 개시제를 사용하고 있지만, 라디칼계의 개시제이기 때문에, 개환하더라도 중합에는 편입되지 않고, 열만을 발생한다. 따라서, 그 때의 열을 이용하여 바인더 수지층을 용융시키는 것에 의해 도전성 입자를 충분히 밀어 넣을 수 있고, 이 상태로 광 경화제에 의해서 경화함으로써 양호한 접속이 가능해졌다.Moreover, in Example 3, although the radical photopolymerization initiator is used as a light absorber, since it is a radical type initiator, even if it ring-opens, it does not incorporate into superposition|polymerization, but generate|occur|produces only heat. Therefore, electroconductive particle could fully be pushed in by melting the binder resin layer using the heat at that time, and favorable connection was attained by hardening|curing with a photocuring agent in this state.
1 이방성 도전 필름
2 박리 필름
3 바인더 수지층
4 도전성 입자
10 액정 표시 패널
11, 12 투명 기판
13 시일
14 액정
15 패널 표시부
16, 17 투명 전극
18 액정 구동용 IC
20 COG 실장부
21 플렉시블 기판
22 FOG 실장부
24 배향막
25, 26 편광판
30 접속 장치
31 스테이지
33 압착 헤드
35 자외선 조사기1 Anisotropic conductive film
2 release film
3 binder resin layer
4 conductive particles
10 liquid crystal display panel
11, 12 Transparent substrate
13 seals
14 liquid crystal
15 panel display
16, 17 transparent electrode
18 Liquid crystal drive IC
20 COG mount
21 flexible substrate
22 FOG Mounting Department
24 alignment film
25, 26 Polarizer
30 connection device
31 stage
33 crimping head
35 UV irradiator
Claims (10)
광 중합 개시제와,
벤조트리아졸계의 자외선 흡수제 및 트리아진계의 자외선 흡수제 중 적어도 1 종을 포함하는 자외선 흡수제를 함유하고,
상기 자외선 흡수제의 광 흡수 피크 파장은 상기 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어져 있는 광 경화계 이방성 도전 접착제.a photopolymerizable compound;
a photopolymerization initiator;
It contains a UV absorber comprising at least one of a benzotriazole-based UV absorber and a triazine-based UV absorber,
The light absorption peak wavelength of the ultraviolet absorber is larger than the light absorption peak wavelength of the photopolymerization initiator, and is further apart by 20 nm or more.
압착 툴에 의해 상기 전자 부품을 상기 투명 기판으로 압압하면서, 광 조사기로부터 광 조사를 실시하는 접속체의 제조 방법에 있어서,
상기 광 경화계 이방성 도전 접착제는, 광 중합성 화합물과, 광 중합 개시제와, 벤조트리아졸계의 자외선 흡수제 및 트리아진계의 자외선 흡수제 중 적어도 1 종을 포함하는 자외선 흡수제를 함유하고, 상기 자외선 흡수제의 광 흡수 피크 파장은 상기 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어지고,
상기 광 조사기는, 상기 광 중합 개시제의 광 흡수 피크 및 상기 자외선 흡수제의 광 흡수 피크를 포함하는 파장의 광을 조사하는 접속체의 제조 방법.On a transparent substrate mounted on a stage, an electronic component is disposed with a photocurable anisotropic conductive adhesive interposed therebetween;
A method for manufacturing a connector in which light is irradiated from a light irradiator while the electronic component is pressed against the transparent substrate with a crimping tool,
The photocurable anisotropic conductive adhesive contains a photopolymerizable compound, a photopolymerization initiator, and an ultraviolet absorber comprising at least one of a benzotriazole-based ultraviolet absorber and a triazine-based ultraviolet absorber, The absorption peak wavelength is larger than the light absorption peak wavelength of the photopolymerization initiator, and is 20 nm or more apart,
The method of manufacturing a connector in which the light irradiator irradiates light having a wavelength including a light absorption peak of the photopolymerization initiator and a light absorption peak of the ultraviolet absorber.
압착 툴에 의해 상기 전자 부품을 상기 투명 기판으로 압압하면서, 광 조사기로부터 광 조사를 실시하는 전자 부품의 접속 방법에 있어서,
상기 광 경화계 이방성 도전 접착제는, 광 중합성 화합물과, 광 중합 개시제와, 벤조트리아졸계의 자외선 흡수제 및 트리아진계의 자외선 흡수제 중 적어도 1 종을 포함하는 자외선 흡수제를 함유하고, 상기 자외선 흡수제의 광 흡수 피크 파장은 상기 광 중합 개시제의 광 흡수 피크 파장보다 크며, 또한 20㎚ 이상 떨어지고,
상기 광 조사기는, 상기 광 중합 개시제의 광 흡수 피크 및 상기 자외선 흡수제의 광 흡수 피크를 포함하는 파장의 광을 조사하는 전자 부품의 접속 방법.On a transparent substrate mounted on a stage, an electronic component is disposed with a photocurable anisotropic conductive adhesive interposed therebetween;
A method for connecting an electronic component in which light is irradiated from a light irradiator while the electronic component is pressed against the transparent substrate with a crimping tool,
The photocurable anisotropic conductive adhesive contains a photopolymerizable compound, a photopolymerization initiator, and an ultraviolet absorber comprising at least one of a benzotriazole-based ultraviolet absorber and a triazine-based ultraviolet absorber, The absorption peak wavelength is larger than the light absorption peak wavelength of the photopolymerization initiator, and is 20 nm or more apart,
The method for connecting an electronic component in which the light irradiator irradiates light having a wavelength including a light absorption peak of the photopolymerization initiator and a light absorption peak of the ultraviolet absorber.
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