CN107078071B - Method for manufacturing connected body, method for connecting electronic component, and connected body - Google Patents

Method for manufacturing connected body, method for connecting electronic component, and connected body Download PDF

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Publication number
CN107078071B
CN107078071B CN201680005144.3A CN201680005144A CN107078071B CN 107078071 B CN107078071 B CN 107078071B CN 201680005144 A CN201680005144 A CN 201680005144A CN 107078071 B CN107078071 B CN 107078071B
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light
bonding step
irradiation
pressure bonding
adhesive
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CN107078071A (en
Inventor
梶谷太一郎
平尾未希
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Dexerials Corp
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Dexerials Corp
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Priority claimed from PCT/JP2016/051595 external-priority patent/WO2016117613A1/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

By using a photocurable adhesive, the electronic components are connected at a low temperature, and misalignment of the electronic components is prevented. Comprising: an adhesive preparation step of providing a circuit connecting adhesive 1 containing a photopolymerization initiator on a transparent substrate 12; a temporary pressure bonding step of disposing the electronic component 18 on the transparent substrate 12 via the circuit-connecting adhesive 1, and pressing the electronic component 18 against the transparent substrate 12 and irradiating the circuit-connecting adhesive 1 with light; and a main bonding step of heating and irradiating light while pressing the electronic component 18 against the transparent substrate, wherein the irradiation amount of light in the temporary bonding step is smaller than that in the main bonding step.

Description

Method for manufacturing connected body, method for connecting electronic component, and connected body
Technical Field
The present invention relates to a method for producing a connection body in which an electronic component is connected to a transparent substrate via a circuit-connecting adhesive containing a photopolymerization initiator, a method for connecting an electronic component to a transparent substrate via a circuit-connecting adhesive containing a photopolymerization initiator, and a connection body produced by the method. The present application claims priority on the basis of Japanese application No. 2015-8950 applied on 1/20 of 2015 and Japanese application No. 2016-8718 applied on 1/20 of 2016, which are incorporated herein by reference.
Background
Liquid crystal display devices have been widely used as various display units such as television sets, PC monitors, mobile phones, portable game machines, tablet PCs, and in-vehicle monitors. In recent years, in such a liquid crystal display device, from the viewpoint of miniaturization of pitches, thinning of thickness, and the like, a so-called cog (chip on glass) in which a liquid crystal driving IC is directly mounted on a substrate of a liquid crystal display panel, or a so-called fog (film on glass) in which a flexible substrate on which a liquid crystal driving circuit is formed is directly mounted on a substrate of a liquid crystal display panel has been used.
For example, as shown in fig. 14, a liquid crystal display device 100 adopting a COG mounting method includes a liquid crystal display panel 104 serving as a main function for liquid crystal display, and the liquid crystal display panel 104 includes two transparent substrates 102 and 103 made of glass substrates or the like and facing each other. The liquid crystal display panel 104 is provided with a panel display portion 107, and the panel display portion 107 is formed by bonding the transparent substrates 102 and 103 to each other with a frame-shaped sealing material 105 and sealing a liquid crystal 106 in a space surrounded by the transparent substrates 102 and 103 and the sealing material 105.
The transparent substrates 102 and 103 have a pair of stripe-shaped transparent electrodes 108 and 109 made of ITO (indium tin oxide) or the like formed on both inner surfaces facing each other so as to intersect each other. The transparent substrates 102 and 103 are arranged such that the pixel, which is the minimum unit of liquid crystal display, is formed by the intersection of the transparent electrodes 108 and 109.
Of the two transparent substrates 102 and 103, one transparent substrate 103 is formed to have a larger planar size than the other transparent substrate 102, and a terminal portion 109a of the transparent electrode 109 is formed in an edge portion 103a of the transparent substrate 103 formed to be larger. Alignment films 111 and 112 subjected to a predetermined rubbing treatment are formed on the transparent electrodes 108 and 109 so that the initial alignment of the liquid crystal molecules can be defined by the alignment films 111 and 112. Further, a pair of polarizers 118, 119 are disposed outside the transparent electrodes 108, 109, so that the polarizers 118, 119 can define the vibration direction of the transmitted light from a light source 120 such as a backlight.
A liquid crystal driving IC115 is thermocompression bonded to the terminal portion 109a via an anisotropic conductive film 114. The anisotropic conductive film 114 is formed by mixing conductive particles into a thermosetting adhesive resin to form a film, and electrically conducts the conductors with the conductive particles by heating and pressure bonding between the two conductors, thereby maintaining the mechanical connection between the conductors with the adhesive resin. The liquid crystal driving IC115 can perform predetermined liquid crystal display by selectively applying a liquid crystal driving voltage to the pixels to locally change the orientation of the liquid crystal. As an adhesive constituting the anisotropic conductive film 114, a thermosetting adhesive having the highest reliability is generally used.
When the liquid crystal driving IC115 is connected to the terminal portion 109a via such an anisotropic conductive film 114, first, the anisotropic conductive film 114 is temporarily pressure-bonded to the terminal portion 109a of the transparent electrode 109 by a temporary pressure bonding means not shown. Next, after the liquid crystal driving IC115 is mounted on the anisotropic conductive film 114, as shown in fig. 15, the liquid crystal driving IC115 is pressed toward the terminal portion 109a together with the anisotropic conductive film 114 by a thermocompression bonding unit 121 such as a thermocompression bonding head, and the thermocompression bonding unit 121 generates heat. The anisotropic conductive film 114 causes a thermosetting reaction due to heat generated by the thermocompression bonding unit 121, and the liquid crystal driving IC115 is bonded to the terminal portion 109a via the anisotropic conductive film 114.
However, in such a connection method using an anisotropic conductive film, the heat pressure temperature is high, and the heat shock to the electronic components such as the liquid crystal driving IC115 and the transparent substrate 103 becomes large. Further, when the temperature is lowered to normal temperature after the connection of the anisotropic conductive film, the adhesive shrinks due to the temperature difference, and warping may occur in the terminal portion 109a of the transparent substrate 103. Therefore, display unevenness, connection failure of the liquid crystal driving IC115, and the like may be caused.
Patent document 2 describes a method of bonding a bonding object and a to-be-bonded object via a photocurable adhesive, in which heat pressing by a heat pressing head is started and then light irradiation is performed.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2008-252098
Patent document 2: japanese patent laid-open No. 2012 and 253282.
Disclosure of Invention
Problems to be solved by the invention
Therefore, a connection method using an ultraviolet curing adhesive instead of the anisotropic conductive film 114 using such a thermosetting adhesive is also provided. In the connection method using the ultraviolet curing adhesive, the adhesive is softened and fluidized by heat, heated only to a temperature sufficient for capturing conductive particles between the terminal portion 109a of the transparent electrode 109 and the electrode of the liquid crystal driving IC115, and cured by ultraviolet irradiation.
In such a connection method using an ultraviolet-curable adhesive, it is not necessary to set the adhesive resin at high temperature for curing, and a defect due to thermal shock to the liquid crystal driving IC115 or the transparent substrate 103 can be prevented. In order to perform low-temperature connection using such an ultraviolet-curable adhesive, it is necessary to reduce the viscosity of the adhesive resin itself of the ultraviolet-curable anisotropic conductive film.
However, if the viscosity of the adhesive resin is reduced, misalignment may occur when electronic components such as the liquid crystal driving IC115 are mounted and pressed by the thermocompression bonding unit 112 or when the thermocompression bonding unit 112 is separated from the liquid crystal driving IC 115. Further, since the fine pitch is achieved in COG connection or the like and the distance between terminals is reduced, the misalignment may cause a short circuit between terminals due to conductive particles, such as a reduction in the pitch between the electrode terminals of the liquid crystal driving IC115 and the terminal portion adjacent to the terminal portion 109a of the transparent substrate 103 connected to the electrode terminals.
In the case where an electronic component having low rigidity, such as the flexible substrate 21, is connected to the transparent substrate 12 using the anisotropic conductive film 1, when pressure is applied in a state where the viscosity of the adhesive is sufficiently lowered by heat of the pressing head as in the technique described in patent document 2, stress remains due to deflection between the terminals 21a of the flexible substrate 21 indicated by arrows in fig. 16 at the time of pressure bonding. Then, when the heating and pressing head 30 is separated (when the pressing out is performed) in the flexible substrate 21, the residual stress of the flexible substrate 21 is released, and as shown in fig. 17, a force that returns the space between the terminals 21a to the direction opposite to the pressing direction is exerted due to the residual stress of the flexible substrate 21. When the residual stress of the flexible substrate 21 is released, as shown in fig. 18, peeling easily occurs between the terminals 21a of the flexible substrate 21 and at the interface between the adhesive resin layer 3 of the anisotropic conductive film and the flexible substrate 21 (gap 44). Such peeling may cause connection failures such as a decrease in the on-resistance value of the connected body and a decrease in the adhesive strength between the anisotropic conductive film and the adherend.
For example, in order to secure the adhesive strength, it is preferable to use a soft adhesive resin that is sufficiently wet when pressure-bonded, that is, an adhesive resin having a low viscosity for an anisotropic conductive film for FOG. However, if the viscosity of the binder resin is excessively reduced, the flexible substrate between the wirings is more likely to be bent during pressure bonding, and as a result, the influence of the release of the residual stress of the flexible substrate tends to be more significantly exposed.
The present invention has been made to solve the above problems, and an object of the present invention is to provide a method for manufacturing a connection body in which electronic components are connected at low temperature by using a photocurable adhesive, and misalignment of the electronic components is prevented to improve connection failure, a method for connecting electronic components, and a connection body manufactured by using the method.
Means for solving the problems
In order to solve the above problems, a method for manufacturing a connected body according to the present invention includes: an adhesive preparation step of providing a circuit connection adhesive containing a photopolymerization initiator on a transparent substrate; a light irradiation step of disposing an electronic component on the transparent substrate via the circuit-connecting adhesive and irradiating the circuit-connecting adhesive with light; and a main bonding step of heating and irradiating the transparent substrate with light while pressing the electronic component against the transparent substrate, wherein an irradiation amount of the light in the light irradiation step is smaller than an irradiation amount of the light in the main bonding step.
Further, a method for producing a connected body according to the present invention includes: an adhesive preparation step of providing a circuit connection adhesive containing a photopolymerization initiator on a transparent substrate; a temporary pressure bonding step of disposing an electronic component on the transparent substrate via the circuit-connecting adhesive, and pressing the electronic component against the transparent substrate and irradiating the circuit-connecting adhesive with light; and a main bonding step of heating and irradiating light while pressing the electronic component against the transparent substrate, wherein the irradiation amount of light in the temporary bonding step is smaller than the irradiation amount of light in the main bonding step.
Further, a method for connecting electronic components according to the present invention includes: an adhesive preparation step of providing a circuit connection adhesive containing a photopolymerization initiator on a transparent substrate; a light irradiation step of disposing an electronic component on the transparent substrate via the circuit-connecting adhesive and irradiating the circuit-connecting adhesive with light; and a main bonding step of heating and irradiating the transparent substrate with light while pressing the electronic component against the transparent substrate, wherein an irradiation amount of the light in the light irradiation step is smaller than an irradiation amount of the light in the main bonding step.
The connector according to the present invention is manufactured by the above-described method for connecting electronic components.
Effects of the invention
According to the present invention, the curing of the circuit-connecting adhesive containing the photopolymerization initiator is started by irradiating the adhesive with light at an appropriate irradiation dose, and the temporary pressure bonding of the electronic component can be performed in a state where the viscosity is increased. Therefore, in the light irradiation step (temporary bonding step) or the main bonding step, when the electronic component is pressed by the bonding tool or when the bonding tool is separated from the electronic component, the alignment deviation of the electronic component from the predetermined position can be suppressed.
Drawings
Fig. 1 is a sectional view showing a mounting process to which the present invention is applied.
Fig. 2 is a sectional view showing an anisotropic conductive film.
FIG. 3 is a sectional view showing a temporary bonding step of the anisotropic conductive film.
FIG. 4 is a sectional view showing a process of disposing a liquid crystal driving IC on a transparent substrate.
FIG. 5 is a sectional view showing a temporary bonding step of the liquid crystal driving IC.
FIG. 6 is a sectional view showing a main press-bonding step of a liquid crystal driving IC.
FIG. 7 is a sectional view showing a connecting body of a liquid crystal driving IC connected to a transparent substrate.
Fig. 8 is a cross-sectional view showing an example of a process of disposing a flexible substrate on a transparent substrate with an anisotropic conductive film interposed therebetween.
Fig. 9 is a cross-sectional view showing an example of a process of irradiating ultraviolet rays onto an anisotropic conductive film after a flexible substrate is disposed on a transparent substrate with the anisotropic conductive film interposed therebetween.
Fig. 10 is a sectional view showing an example of a main pressure bonding step of a flexible substrate.
Fig. 11 is a diagram for explaining a method of measuring on-resistance according to the examples and comparative examples.
FIG. 12 is a view for explaining a method of measuring the misalignment amount of the terminals of the connected body sample in the width direction.
FIG. 13 is a view for explaining timings of light irradiation before main pressure bonding and light irradiation and heat pressurization at the time of main pressure bonding in example 2.
Fig. 14 is a cross-sectional view showing a conventional liquid crystal display panel.
Fig. 15 is a sectional view showing a COG mounting process of a conventional liquid crystal display panel.
Fig. 16 is a sectional view showing an example of a heating and pressing step of a laminate in a conventional method for manufacturing a flexible substrate.
Fig. 17 is a cross-sectional view showing an example of a laminated body in a state where stress is released when a heating tool is released in a conventional method for manufacturing a flexible substrate.
Fig. 18 is a cross-sectional view showing an example of a laminated body in a state where residual stress is released in a flexible substrate in a conventional method for manufacturing a flexible substrate.
Detailed Description
Hereinafter, a method for manufacturing a connected body, a method for connecting an electronic component, and a connected body to which the present invention is applied will be described in detail with reference to the drawings. The present invention is not limited to the following embodiments, and it is apparent that various modifications can be made without departing from the scope of the present invention. The drawings are schematic, and the scale of each dimension and the like may be different from those in reality. Specific dimensions and the like should be determined with reference to the following description. Further, it is apparent that the drawings include portions having different dimensional relationships or ratios from each other.
< embodiment 1 >
In embodiment 1 below, a case where so-called cog (chip on glass) mounting is performed in which an IC chip for driving liquid crystal is mounted as an electronic component on a glass substrate of a liquid crystal display panel will be described as an example. As shown in fig. 1, the liquid crystal display panel 10 is configured such that two transparent substrates 11 and 12 made of glass substrates or the like are disposed to face each other, and these transparent substrates 11 and 12 are bonded to each other by a frame-shaped sealing material 13. The liquid crystal display panel 10 has a panel display portion 15 formed by sealing a liquid crystal 14 in a space surrounded by transparent substrates 11 and 12.
The transparent substrates 11 and 12 have a pair of stripe-shaped transparent electrodes 16 and 17 made of ITO (indium tin oxide) or the like formed on both inner surfaces facing each other so as to intersect each other. The two transparent electrodes 16 and 17 form a pixel which is a minimum unit of liquid crystal display by the intersection of the two transparent electrodes 16 and 17.
One transparent substrate 12 of the two transparent substrates 11 and 12 is formed to have a larger plane size than the other transparent substrate 11, a COG mounting portion 20 for mounting a liquid crystal drive IC18 as an electronic component is provided at an edge portion 12a of the transparent substrate 12 formed to be large, and an FOG mounting portion 22 for mounting a flexible substrate 21 having a liquid crystal drive circuit formed thereon as an electronic component is provided in the vicinity of the outer side of the COG mounting portion 20.
Further, the liquid crystal driving IC or the liquid crystal driving circuit can perform predetermined liquid crystal display by selectively applying a liquid crystal driving voltage to the pixel to locally change the orientation of the liquid crystal.
The terminal portions 17a of the transparent electrodes 17 are formed on the mounting portions 20 and 22. The terminal portion 17a is connected to the liquid crystal driving IC18 or the flexible substrate 21 using the anisotropic conductive film 1 as a circuit connecting adhesive containing a photopolymerization initiator. The anisotropic conductive film 1 contains conductive particles 4, and is a member for electrically connecting the electrodes of the liquid crystal driving IC18 or the flexible substrate 21 and the terminal portions 17a of the transparent electrodes 17 formed on the edge portion 12a of the transparent substrate 12 via the conductive particles 4. The anisotropic conductive film 1 is an ultraviolet-curable adhesive, and is thermally pressed and fluidized by a heating and pressing head 30 described later, whereby the conductive particles 4 are crushed between the terminal portion 17a and the liquid crystal driving IC18 or the electrodes of the flexible substrate 21, and the conductive particles 4 are cured in a crushed state by irradiating ultraviolet rays from the ultraviolet irradiator 31. Thereby, the anisotropic conductive film 1 electrically and mechanically connects the transparent substrate 12 to the liquid crystal driving IC18 or the flexible substrate 21.
Further, on both transparent electrodes 16 and 17, an alignment film 24 subjected to a predetermined rubbing treatment is formed so that the initial alignment of liquid crystal molecules can be defined by the alignment film 24. Further, a pair of polarizers 25, 26 are disposed outside the transparent substrates 11, 12 so that the direction of vibration of transmitted light from a light source (not shown) such as a backlight can be defined by the polarizers 25, 26.
[ Anisotropic conductive film ]
As shown in fig. 2, an Anisotropic Conductive Film (ACF) 1 is generally formed with a pressure-sensitive adhesive resin layer (adhesive layer) 3 containing Conductive particles on a release Film 2 serving as a base material. As shown in fig. 1, the anisotropic conductive film 1 is used to connect and conduct the liquid crystal display panel 10 and the liquid crystal driving IC18 or the flexible substrate 21 by interposing the adhesive resin layer 3 between the transparent electrode 17 formed on the transparent substrate 12 of the liquid crystal display panel 10 and the liquid crystal driving IC18 or the flexible substrate 21.
As the release film 2, a base material such as a polyethylene terephthalate film generally used for an anisotropic conductive film can be used.
The binder resin layer 3 is formed by dispersing conductive particles 4 in a binder. The adhesive contains a film-forming resin, a curable resin, a curing agent, a silane coupling agent, and the like, and is similar to the adhesive used for a general anisotropic conductive film.
The film-forming resin is preferably a resin having an average molecular weight of about 10000 to 80000. Examples of the film-forming resin include various resins such as phenoxy resin, epoxy resin, modified epoxy resin, and urethane resin. Among them, phenoxy resins are particularly preferable from the viewpoints of film formation state, connection reliability, and the like.
The curable resin is not particularly limited, and examples thereof include epoxy resins and acrylic resins.
The epoxy resin is not particularly limited and can be appropriately selected according to the purpose. Specific examples thereof include naphthalene type epoxy resins, biphenyl type epoxy resins, novolak type epoxy resins, bisphenol type epoxy resins, stilbene type epoxy resins, triphenol methane type epoxy resins, phenol aralkyl type epoxy resins, naphthol type epoxy resins, dicyclopentadiene type epoxy resins, triphenylmethane type epoxy resins, and the like. These may be used alone or in combination of 2 or more.
The acrylic resin is not particularly limited and can be appropriately selected according to the purpose, and specific examples thereof include methyl acrylate, ethyl acrylate, isopropyl acrylate, isobutyl acrylate, epoxy acrylate, ethylene glycol diacrylate, diethylene glycol diacrylate, trimethylolpropane triacrylate, dimethylol tricyclodecane diacrylate, 1, 4-butanediol tetraacrylate, 2-hydroxy-1, 3-diacryloyloxypropyl, 2-bis [ 4- (acryloyloxymethyl) phenyl ] propane, 2-bis [ 4- (acryloyloxyethoxy) phenyl ] propane, dicyclopentenyl acrylate, tricyclodecanyl acrylate, dendritic (acryloyloxyethyl) isocyanurate, urethane acrylate, epoxy acrylate, and the like. These may be used alone or in combination of 2 or more.
The curing agent is not particularly limited as long as it is a photocurable type, and can be appropriately selected according to the purpose, but when the curable resin is an epoxy resin, a cationic curing agent is preferable, and an anionic curing agent may be used. When the curable resin is a propylene resin, a radical curing agent is preferable. The curable resin may include an epoxy resin and an acrylic resin.
The cationic curing agent is not particularly limited, and may be appropriately selected according to the purpose, and examples thereof include sulfonium salts and onium salts, among which aromatic sulfonium salts are preferable. The radical curing agent is not particularly limited, and may be appropriately selected according to the purpose, and examples thereof include organic peroxides.
Examples of the silane coupling agent include epoxy compounds, ammonia compounds, mercapto/sulfide compounds, and ureide compounds. By adding the silane coupling agent, the adhesiveness at the interface between the organic material and the inorganic material is improved.
As the conductive particles 4, any known conductive particles used for anisotropic conductive films can be cited. Examples of the conductive particles 4 include particles of various metals or metal alloys such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver, and gold, particles obtained by plating metal on the surfaces of particles of metal oxides, carbon, graphite, glass, ceramics, and plastics, and particles obtained by further plating insulating films on the surfaces of these particles. In the case of plating the surface of the resin particles with metal, examples of the resin particles include particles of epoxy resin, phenol resin, acrylic resin, Acrylonitrile Styrene (AS) resin, benzoguanamine resin, divinylbenzene-based resin, styrene-based resin, and the like.
[ production method ]
Next, a process for producing a connector to be connected to the transparent electrode 17 of the transparent substrate 12 via the anisotropic conductive film 1, by the liquid crystal driving IC18 or the flexible substrate 21, will be described.
< example 1-1 >)
[ temporary sticking step ]
First, the anisotropic conductive film 1 is temporarily attached to the transparent substrate 12 (adhesive disposing step). As shown in fig. 3, in the method of temporarily attaching the anisotropic conductive film, the anisotropic conductive film 1 is disposed on the transparent electrode 17 of the transparent substrate 12 so that the adhesive resin layer 3 is on the transparent electrode 17 side. After the pressure-sensitive adhesive resin layer 3 is disposed on the transparent electrode 17, the pressure-sensitive adhesive resin layer 3 is heated and pressed from the side of the release film 2 by, for example, a thermocompression bonding tool, the thermocompression bonding tool is separated from the release film 2, and the release film 2 is peeled from the pressure-sensitive adhesive resin layer 3. The anisotropic conductive film 1 may be temporarily bonded by pressing with a thermocompression bonding tool and light irradiation, or by both of the thermocompression and the light irradiation.
[ Aligning Process/temporary crimping Process ]
Next, the liquid crystal driving IC18 is disposed on the transparent substrate 12 with the anisotropic conductive film 1 interposed therebetween, and the liquid crystal driving IC18 is pressed against the transparent substrate 12 and irradiated with light to the anisotropic conductive film 1 (temporary pressure bonding step). First, as shown in fig. 4, alignment of the liquid crystal driving IC18 and the transparent electrode 17 is performed. Specifically, the liquid crystal driving IC is disposed such that each terminal portion 17a of the transparent electrode 17 and the electrode terminal 18a of the liquid crystal driving IC18 face each other with the adhesive resin layer 3 interposed therebetween.
Next, as shown in fig. 5, the upper surface of the liquid crystal driving IC18 is thermally pressed at a lower temperature and a lower pressure than in the main bonding step described later through the buffer material 32 by the thermal compression tool 30 heated to a predetermined heating temperature, and the adhesive resin layer 3 of the anisotropic conductive film 1 is irradiated with ultraviolet rays by the ultraviolet irradiator 31 provided on the back surface side of the transparent substrate 12.
The heat pressing temperature of the heat pressing tool 30 is set to a predetermined temperature ± 10 to 20 ℃ (for example, about 80 ℃) of a viscosity (lowest melt viscosity) when the adhesive resin layer is melted before the start of curing. Thus, the warping of the transparent substrate is minimized, and no damage is caused by heat applied to the liquid crystal driving IC.
Ultraviolet rays emitted from the ultraviolet irradiator 31 are irradiated to the adhesive resin layer 3 through a transparent support base such as glass supporting the transparent substrate 12 and the transparent substrate 12 supported by the support base. As the ultraviolet irradiator 31, an LED lamp, a mercury lamp, a metal halide lamp, or the like can be used.
Here, the irradiation amount of ultraviolet rays (i.e., the illuminance of ultraviolet rays (mW/cm)) irradiated to the anisotropic conductive film 1 in the temporary pressure bonding step is preferably set to the irradiation amount of ultraviolet rays2) X irradiation time (sec)) less than the irradiation amount of light in the main pressure bonding step, and is 3 to 20% of the irradiation amount in the main pressure bonding step. For example, the irradiation amount in the main pressure bonding step is set to 100mW/cm2In the case of 1 second, the dose of ultraviolet radiation in the temporary pressure bonding step is preferably 3 to 15mW/cm20.5-2 seconds.
In the temporary pressure bonding step, the irradiation amount of light is preferably changed by a minimum inter-wiring distance (space) (minimum inter-bump distance) of the liquid crystal driving IC 18. For example, when the minimum inter-wiring distance of the liquid crystal driving IC18 is 8 to 20 μm, the irradiation amount of light in the temporary pressure bonding step is preferably 4 to 20% of the irradiation amount of light in the main pressure bonding step. By such a condition of light irradiation, it is not necessary to adjust the viscosity of the binder resin of the anisotropic conductive film every time.
The pressing force applied to the liquid crystal driving IC18 in the temporary bonding step is preferably 40 to 90%, more preferably 70 to 80%, of the pressing force applied to the liquid crystal driving IC18 in the main bonding step.
In the temporary pressure bonding step, the anisotropic conductive film 1 is irradiated with ultraviolet rays at an appropriate irradiation dose to start curing of the adhesive resin layer 3, whereby the temporary pressure bonding of the liquid crystal driving IC18 can be performed in a state where the viscosity is increased. Therefore, in the temporary bonding step or the later-described final bonding step, when the liquid crystal driving IC18 is pressed by the thermocompression bonding tool 30 or when the thermocompression bonding tool 30 is separated from the liquid crystal driving IC18, the misalignment of the liquid crystal driving IC18 from the predetermined position can be suppressed.
[ formal crimping step ]
Next, as shown in fig. 6, the liquid crystal driving IC18 is electrically and mechanically connected to the transparent substrate 12 by pressing the liquid crystal driving IC18 against the transparent substrate 12 and applying pressure and light (main pressure bonding step). In the main pressure bonding step, the conductive particles 4 are pressed by the thermocompression bonding tool 30 at a predetermined pressure so as to be sandwiched between the electrode terminals 18a of the liquid crystal driving IC18 and the terminal portions 17a of the transparent electrodes 17. In the main pressure bonding step, ultraviolet rays are irradiated at an illuminance and for a time period for curing the adhesive resin layer 3.
This allows the binder resin to flow out from between the electrode terminals 18a of the liquid crystal driving IC18 and the terminal portions 17a of the transparent electrodes 17, and the conductive particles 4 to be sandwiched therebetween, thereby allowing conduction to occur, and the binder resin is cured in this state. As a result, as shown in fig. 7, the liquid crystal display panel 10 is formed as a connector in which the liquid crystal driving IC18 is electrically and mechanically connected to the transparent substrate 12.
In this case, according to the present manufacturing process, since the viscosity of the adhesive resin is increased to some extent by irradiating the anisotropic conductive film 1 with ultraviolet rays at a smaller irradiation amount than the irradiation amount of light in the primary bonding process in the temporary bonding process, misalignment of the liquid crystal driving IC18 can be prevented when the thermocompression bonding tool 30 is used for pressing or when the thermocompression bonding tool 30 is separated. Therefore, it is possible to prevent a short circuit between terminals, which is caused by a narrow pitch between the electrode terminals 18a of the fine-pitch liquid crystal driving IC18 and the terminal portions adjacent to the terminal portions 17a of the transparent electrodes 17 connected to the electrode terminals 18a and short-circuited via the conductive particles 4.
The ultraviolet irradiation may be started from the temporary bonding step. In this case, the illuminance in the temporary bonding step may be lower than that in the temporary pressure bonding step.
< example 1-2 >
In the manufacturing method, in the temporary pressure bonding step, instead of the ultraviolet irradiation from the transparent substrate 12 side, the ultraviolet irradiation may be performed from the liquid crystal driving IC18 side.
< example 1-3 >
The manufacturing method may further include: a step of providing the anisotropic conductive film 1 on the transparent substrate 12; disposing a liquid crystal driving IC18 on the anisotropic conductive film 1; a step of irradiating light from the liquid crystal driving IC18 side (light irradiation step); and a step (main pressure bonding step) of heating and irradiating light while pressing the liquid crystal driving IC18 against the transparent substrate 12 so that the irradiation amount of light in the light irradiation step is smaller than the irradiation amount of light in the main pressure bonding step.
< example 1-4 >
The manufacturing method may further include a step of pressing the liquid crystal driving IC18 with a heating tool before and after the light irradiation step in specific examples 1 to 3.
< example 1-5 >
The manufacturing method may further include a step of irradiating the entire surface of the anisotropic conductive film 1 with light between the step of providing the anisotropic conductive film 1 on the transparent substrate 12 and the step of disposing the liquid crystal driving IC18 on the anisotropic conductive film 1 in specific examples 1 to 3.
< examples 1 to 6 >
The manufacturing method may further include: a step of providing the anisotropic conductive film 1 on the transparent substrate 12; a step of irradiating the entire surface of the anisotropic conductive film 1 with light from the anisotropic conductive film 1 side (a first irradiation step); a step of disposing the liquid crystal driving IC18 on the anisotropic conductive film 1 after the irradiation step; a step of irradiating light from the transparent substrate 12 side (light irradiation step); and a step (main pressure bonding step) of heating and irradiating light while pressing the liquid crystal driving IC18 against the transparent substrate 12 so that the total of the irradiation amounts of light in the preliminary irradiation step and the light irradiation step is smaller than the irradiation amount of light in the main pressure bonding step.
< embodiment 2 >
In embodiment 2, a case where a flexible substrate is mounted as an electronic component (FOG mounting) on a glass substrate of a liquid crystal display panel will be described as an example. In embodiment 2, the same reference numerals as those in embodiment 1 are used, and the same meaning as embodiment 1 is used.
[ method for producing a connected body ]
< example 2-1 >
The present manufacturing method as an example includes: a step of providing an anisotropic conductive film on a transparent substrate; a step of disposing a flexible substrate on a transparent substrate with an anisotropic conductive film interposed therebetween, and irradiating the anisotropic conductive film with light; and heating and irradiating light while pressing the flexible substrate against the transparent substrate.
[ temporary sticking step ]
The temporary bonding step can be performed in the same manner as the temporary bonding step in embodiment 1 described above.
[ light irradiation Process ]
In the light irradiation step, for example, as shown in fig. 8, the flexible substrate 21 is disposed on the transparent substrate 12 with the anisotropic conductive film 1 interposed therebetween, and light irradiation is performed on the anisotropic conductive film 1. As for the light irradiation, for example, as shown in fig. 9, the adhesive resin layer 3 of the anisotropic conductive film 1 can be irradiated with ultraviolet rays by an ultraviolet ray irradiator 31 disposed on the transparent substrate 12 side. The light irradiation may be performed from the flexible substrate 21 side instead of the transparent substrate 12 side.
In the light irradiation step, the irradiation amount of ultraviolet light with respect to the anisotropic conductive film 1 is smaller than the irradiation amount of light in the main pressure bonding step described later. In the light irradiation step, the irradiation amount of light is preferably changed by the minimum inter-wiring distance of the flexible substrate 21. For example, when the minimum inter-wiring distance of the flexible substrate 21 exceeds 25 μm, the irradiation amount of light in the light irradiation step is preferably 5 to 25%, more preferably 5 to 15%, of the irradiation amount of light in the main pressure bonding step. For example, when the minimum inter-wiring distance of the flexible substrate 21 is 25 μm or less, the irradiation amount of light in the light irradiation step is preferably 2 to 15%, more preferably 5 to 10% of the irradiation amount of light in the main pressure bonding step.
The illuminance of the ultraviolet light irradiated in the light irradiation step and the ultraviolet irradiation time can be appropriately selected within a range satisfying the above-described conditions. For example, the ultraviolet light intensity can be set to 1-400 mW/cm2The ultraviolet irradiation time is set to 0.5 to 2 seconds. In particular, from the viewpoint that the anisotropic conductive film 1 is not cured at all before the main pressure bonding step, the irradiation time of light in the light irradiation step is preferably 1/5 or less with respect to the pressure bonding time in the main pressure bonding step.
[ formal crimping step ]
In the main pressure bonding step, for example, as shown in fig. 10, the flexible substrate 21 is heated and irradiated with light while being pressed against the transparent substrate 17. As a result, the flexible substrate 21 and the transparent substrate 17 are connected, for example, as a connection body in which the flexible substrate 21 is connected to the transparent substrate 17, a liquid crystal display panel is formed.
In the main pressure bonding step, first, it is preferable to align the flexible substrate 21 and the transparent electrode 17. Specifically, the flexible substrate 21 is disposed so that the terminal portions 17a of the transparent electrodes 17 and the terminal portions 21a of the flexible substrate 21 face each other with the adhesive resin layer 3 interposed therebetween.
Next, the upper surface of the flexible substrate 21 is thermally pressed via the buffer material 32 by the thermal compression tool 30 heated to a predetermined heating temperature, and the adhesive resin layer 3 of the anisotropic conductive film 1 is irradiated with ultraviolet rays by the ultraviolet irradiator 31 provided on the back surface side of the transparent substrate 12. The thermal pressing in the main pressure bonding step is performed at a predetermined pressure so that the conductive particles 4 are sandwiched between the terminal portions 21a of the flexible substrate 21 and the terminal portions 17a of the transparent electrodes 17. The light irradiation in the main pressure bonding step is performed under conditions that can cure the pressure-sensitive adhesive resin layer 3.
According to the method for manufacturing a connected body, since the viscosity of the adhesive resin of the anisotropic conductive film 1 is increased to some extent before the primary bonding step by making the irradiation amount of light in the light irradiation step smaller than the irradiation amount of light in the primary bonding step, misalignment of the flexible substrate 21 can be prevented when the thermocompression bonding tool 30 is used for pressing or when the thermocompression bonding tool 30 is separated.
Further, according to the present manufacturing method, since the influence of residual stress relaxation of the flexible substrate can be suppressed at the time of pressure bonding, peeling at the interface between the adhesive resin layer of the anisotropic conductive film and the flexible substrate can be suppressed. Therefore, connection failures such as a decrease in the on-resistance value of the connected body and a decrease in the adhesive strength between the anisotropic conductive film and the adherend can be suppressed.
In addition, according to the manufacturing method, even if the viscosity of the binder resin of the anisotropic conductive film is not adjusted every time the wiring layout of the flexible substrate or the minimum inter-wiring distance is compared, the influence of the release of the residual stress can be suppressed in accordance with the condition of light irradiation. Therefore, the production efficiency of the connected body can be further improved.
In the light irradiation step, the pressure-sensitive adhesive resin layer 3 of the anisotropic conductive film 1 may be irradiated with ultraviolet light by the ultraviolet irradiator 31 via the buffer material through the thermocompression bonding tool while performing thermocompression at a lower temperature and a lower pressure than those in the main pressure-bonding step. The hot pressing temperature and the pressing force of the hot press tool can be set to, for example, the same conditions as those in the temporary press bonding step in embodiment 1 described above.
< example 2-2 >
The manufacturing method may further include a step of pressing the flexible substrate 21 with a heating tool before and after the light irradiation step in specific example 2-1.
< example 2-3 >
The present manufacturing method may further include a step of irradiating light onto the entire surface of the anisotropic conductive film 1 between the step of providing the anisotropic conductive film 1 on the transparent substrate 12 and the step of disposing the flexible substrate 21 in the specific example 2-1.
< example 2-4 >
The manufacturing method may further include: a temporary bonding step of providing the anisotropic conductive film 1 on the transparent substrate 12; a step of irradiating the entire surface of the anisotropic conductive film 1 with light (a first irradiation step); a step of disposing a flexible substrate 21 on the anisotropic conductive film 1 after the irradiation step; a step of irradiating light from the transparent substrate 12 side (light irradiation step); and a step (primary pressure bonding step) of pressing the flexible substrate 21 against the transparent substrate 12 and simultaneously heating and irradiating light so that the total of the irradiation amounts of light in the primary irradiation step and the light irradiation step is smaller than the irradiation amount of light in the primary pressure bonding step.
Examples
< embodiment 1 >
Next, examples of the present technology will be explained. In this example, the on-resistance value (Ω) of the transparent electrode between the IC chip and the transparent substrate and the alignment deviation amount (μm) of the IC chip at the initial stage of connection and after the reliability test were measured for each of the connected body samples of the transparent substrate and the IC chip manufactured under different irradiation conditions of ultraviolet rays in the temporary pressure bonding step.
As an adhesive used for connection, an anisotropic conductive film composed of an adhesive resin layer containing a photoacid generator and a cation polymerizable compound was prepared.
The adhesive resin layer is prepared from ethyl acetate and toluene
45 parts by mass of a phenoxy resin (YP-50: available from Nippon iron Japan chemical Co., Ltd.);
45 parts by mass of an isocyanuric acid EO-modified diacrylate (M-215: manufactured by Toyo Synthesis Co., Ltd.);
silane coupling agent (KBM-403: manufactured by shin-Etsu chemical Co., Ltd.) 2 parts by mass
8 parts by mass of a photoradical generator (IRGACURE 369, manufactured by BASF JAPAN Co., Ltd.),
the mixed solution was prepared so that the solid portion became 50%, and the particle density became about 50,000 pieces/mm2Conductive particles (AUL 704: average particle diameter 4 μm, manufactured by hydroprocess chemical Co., Ltd.) were dispersed. The mixed solution was coated on a PET film having a thickness of 50 μm, and dried in an oven at 70 ℃ for 5 minutes to form a film having a thickness of 20 μm.
As evaluation element, use
The appearance is as follows: 1.8mm × 20 mm;
bump height: 15 μm;
bump size: 30X 60 μm (minimum distance between bumps 10 μm)
IC for evaluation of (1). The bumps are arranged inside both ends in the longitudinal direction of the outer shape of the IC for evaluation so that the short sides of the bumps are parallel to the longitudinal direction of the outer shape of the IC for evaluation. The distance between the bumps in the arrangement direction is the minimum inter-bump distance of the present evaluation element.
As an evaluation substrate to which the IC for evaluation was connected, ITO-plated glass having a thickness of 0.5mm was used.
An evaluation IC was disposed on the glass substrate with the anisotropic conductive film interposed therebetween, and a thermal compression was performed using a thermal compression bonding tool and an ultraviolet irradiation was performed using an ultraviolet irradiator (ZUV-C30H: manufactured by OMRON corporation) to perform temporary compression bonding and main compression bonding, thereby forming a connected body sample.
The temporary pressure bonding conditions were 80 ℃ for 2MPa for 2 seconds in examples 1 to 6 and comparative examples 1 to 8, and a Teflon (TEFLON) (registered trademark) sheet having a thickness of 50 μm was interposed as a buffer material between the thermal pressure bonding tool and the IC for evaluation during the pressing. In addition, the ultraviolet irradiation is started simultaneously with the heating and pressing by the thermocompression bonding tool. The ultraviolet irradiation at the time of temporary pressure bonding is performed from the glass substrate side.
The conditions for the final pressure bonding were 100 ℃ for 80MPa and 5 seconds for examples 1 to 6 and comparative examples 1 to 8, and a Teflon (registered trademark) sheet having a thickness of 50 μm was interposed as a buffer material between the thermal pressure bonding tool and the IC for evaluation during the pressing. In addition, ultraviolet irradiation is self-utilizing4 seconds after the thermal compression bonding tool is heated and pressurized, the irradiation time is 1 second, and the illumination intensity is 100mW/cm2. The ultraviolet irradiation in the main pressure bonding is performed from the glass substrate side.
Then, the initial on-resistance value (Ω) and the on-resistance value (Ω) after the reliability test were measured for the samples of the interconnectors according to the examples and comparative examples. The conditions for the reliability experiments were 85% RH500hr at 85 ℃. As shown in fig. 11, a digital multimeter was connected to wiring 43 of ITO-plated glass connected to bumps 42 of the IC for evaluation, and the on-resistance value when a current of 2mA was applied was measured by a so-called 4-terminal method.
In addition, the alignment deviation amount was measured using a solid microscope for the linker samples according to the examples and comparative examples. The allowable range of the alignment deviation is set to 1.0 μm or less.
[ example 1]
In example 1, the heat and pressure conditions in the temporary pressure bonding step were 60MPa and 80 ℃ and the ultraviolet irradiation conditions were 3mW/cm 21 second. The irradiation amount of ultraviolet light in the temporary pressure bonding step of example 1 was 3% of the irradiation amount in the main pressure bonding step. The initial on-resistance of the sample of the interconnector according to example 1 was as low as 1.4 Ω, and the on-resistance after the reliability test was also 4.3 Ω. The misalignment amount of the linker sample according to example 1 was 0.9. mu.m.
[ example 2]
In example 2, the heat and pressure conditions in the temporary pressure bonding step were 60MPa and 80 ℃ and the ultraviolet irradiation conditions were 5mW/cm 21 second. The irradiation amount of ultraviolet rays in the temporary pressure bonding step of example 2 was 5% of the irradiation amount in the main pressure bonding step. The initial on-resistance of the sample of the interconnector of example 2 was as low as 1.0 Ω, and the on-resistance after the reliability test was also 4.1 Ω. The misalignment amount of the linker sample according to example 2 was 0.7. mu.m.
[ example 3]
In example 3, the heat and pressure conditions in the temporary pressure bonding step were 60MPa and 80 ℃ and the ultraviolet irradiation conditions were 15mW/cm 21 second. The irradiation amount of ultraviolet rays in the temporary pressure bonding step of example 3 was 15% of the irradiation amount in the main pressure bonding step. The initial on-resistance of the sample of the interconnector of example 3 was as low as 1.2 Ω, and the on-resistance after the reliability test was also 4.4 Ω. The misalignment amount of the linker sample of example 3 was 0.3. mu.m.
[ example 4]
In example 4, the heat and pressure conditions in the temporary pressure bonding step were 60MPa and 80 ℃ and the ultraviolet irradiation conditions were 20mW/cm 21 second. The irradiation amount of ultraviolet rays in the temporary pressure bonding step of example 4 was 20% of the irradiation amount in the main pressure bonding step. The initial on-resistance of the sample of the interconnector according to example 4 was as low as 2.4 Ω, and the on-resistance after the reliability test was also 4.4 Ω. The misalignment amount of the linker sample of example 4 was 0.3. mu.m.
[ example 5]
In example 5, the heat and pressure conditions in the temporary pressure bonding step were 60MPa and 80 ℃ and the ultraviolet irradiation conditions were 10mW/cm20.5 second. The irradiation amount of ultraviolet light in the temporary pressure bonding step of example 5 was 5% of the irradiation amount in the main pressure bonding step. The initial on-resistance of the sample of the interconnector of example 5 was as low as 1.2 Ω, and the on-resistance after the reliability test was also 4.5 Ω. The amount of misalignment of the linker sample of example 5 was 0.6. mu.m.
[ example 6]
In example 6, the heat and pressure conditions in the temporary pressure bonding step were 60MPa and 80 ℃ and the ultraviolet irradiation conditions were 10mW/cm 22 seconds. The irradiation amount of ultraviolet rays in the temporary pressure bonding step of example 6 was 20% of the irradiation amount in the main pressure bonding step. The initial on-resistance of the sample of the interconnector of example 6 was as low as 1.3 Ω, and the on-resistance after the reliability test was also 4.2 Ω. The amount of misalignment of the linker sample of example 6 was 0.6. mu.m.
Comparative example 1
In comparative example 1, the heat and pressure conditions in the temporary pressure bonding step were 7MPa and 50 ℃, and no irradiation with ultraviolet rays was performed. The irradiation amount of ultraviolet light in the temporary pressure bonding step of comparative example 1 was 0% of the irradiation amount in the main pressure bonding step. The sample of the interconnect according to comparative example 1 had an initial on resistance of 3.4 Ω, and an on resistance after the reliability test was 6.1 Ω. In addition, the sample of the linker of comparative example 1 had a misalignment amount as large as 3.1. mu.m.
Comparative example 2
In comparative example 2, the heat and pressure conditions in the temporary pressure bonding step were 7MPa and 60 ℃, and no irradiation with ultraviolet light was performed. The irradiation amount of ultraviolet light in the temporary pressure bonding step of comparative example 2 was 0% of the irradiation amount in the main pressure bonding step. The interconnect sample of comparative example 2 had an initial on resistance as low as 1.5 Ω, but had an on resistance as high as 5.1 Ω after the reliability test. In addition, the sample of the comparative example 2 according to the connected body of the alignment deviation is as large as 4.3 m.
Comparative example 3
In comparative example 3, the heat and pressure conditions in the temporary pressure bonding step were 7MPa and 50 ℃ and the ultraviolet irradiation conditions were 15mW/cm 21 second. The irradiation amount of ultraviolet light in the temporary pressure bonding step of comparative example 3 was 1.5% of the irradiation amount in the main pressure bonding step. The interconnect sample of comparative example 3 had an initial on resistance of 2.3 Ω and an on resistance of 5.3 Ω after the reliability test. The amount of misalignment of the linker sample of comparative example 3 was 1.8. mu.m.
Comparative example 4
In comparative example 4, the heat and pressure conditions in the temporary pressure bonding step were 60MPa and 80 ℃, and no irradiation with ultraviolet light was performed. The irradiation amount of ultraviolet light in the temporary pressure bonding step of comparative example 4 was 0% of the irradiation amount in the main pressure bonding step. The initial on-resistance of the sample of the interconnect according to comparative example 4 was as low as 1.2 Ω, and the on-resistance after the reliability test was also 4.3 Ω. However, the comparative example 4 relates to a sample of a linker having a large misalignment amount of 6.4. mu.m.
Comparative example 5
In comparative example 5, the heat-pressing conditions in the temporary pressure-bonding step were 60MPa and 80 deg.CThe ultraviolet irradiation condition was 2mW/cm 21 second. The irradiation amount of ultraviolet light in the temporary pressure bonding step of comparative example 5 was 2% of the irradiation amount in the main pressure bonding step. The interconnect sample of comparative example 5 had an initial on resistance as low as 1.2 Ω and an on resistance after the reliability test of 4.3 Ω. However, the sample of the linker related to comparative example 5 had a misalignment amount as large as 3.1. mu.m.
Comparative example 6
In comparative example 6, the heat and pressure conditions in the temporary pressure bonding step were 60MPa and 80 ℃ and the ultraviolet irradiation conditions were 25mW/cm 21 second. The irradiation amount of ultraviolet light in the temporary pressure bonding step of comparative example 6 was 25% of the irradiation amount in the main pressure bonding step. The sample of the interconnect according to comparative example 6 had an initial on resistance of 6.3 Ω and an on resistance of 9.3 Ω after the reliability test. However, the sample of the linker of comparative example 6 had a misalignment of 0.3. mu.m.
Comparative example 7
In comparative example 7, the heat and pressure conditions in the temporary pressure bonding step were 60MPa and 80 ℃ and the ultraviolet irradiation conditions were 10mW/cm20.2 seconds. The irradiation amount of ultraviolet light in the temporary pressure bonding step of comparative example 7 was 2% of the irradiation amount in the main pressure bonding step. The interconnect sample of comparative example 7 had an initial on resistance as low as 1.1 Ω and an on resistance after the reliability test of 4.5 Ω. However, the sample of the linker of comparative example 7 had a misalignment as large as 3.1. mu.m.
Comparative example 8
In comparative example 8, the heat and pressure conditions in the temporary pressure bonding step were 60MPa and 80 ℃ and the ultraviolet irradiation conditions were 10mW/cm22.5 seconds. The irradiation amount of ultraviolet light in the temporary pressure bonding step of comparative example 8 was 25% of the irradiation amount in the main pressure bonding step. The sample of the interconnect according to comparative example 8 had an initial on resistance of 5.2 Ω and an on resistance of 7.5 Ω after the reliability test. In addition, the comparative example 8 relates to the sample of the connecting body of the large amount of 1.2 m alignment deviation.
[ Table 1]
Figure 257870DEST_PATH_IMAGE002
Figure 175010DEST_PATH_IMAGE004
As shown in Table 1, examples 1 to 6 had an illuminance of 3 to 20mW/cm in the temporary pressure bonding step2And irradiating the substrate with ultraviolet light for 0.5 to 2 seconds. This is 3 to 20% of the irradiation amount in the main pressure bonding step. Therefore, in examples 1 to 6, the curing reaction of the binder resin was appropriately performed to increase the viscosity without inhibiting the press-in of the conductive particles, and the misalignment amount of the evaluation IC was less than 1.0 μm.
In comparative examples 1 and 2, since ultraviolet rays were not irradiated in the temporary bonding step, if pressing was performed at a low temperature and a low pressure, the misalignment amount of the evaluation IC increased when pressing was performed with a thermal bonding tool or the like. Further, since the pressing is performed at a low pressure, the conductive particles are insufficiently pressed, and the on-resistance increases after the reliability test.
In comparative example 3, although ultraviolet light was irradiated at an appropriate illuminance for a proper time in the temporary pressure bonding step, the pressing force of the evaluation IC was low, the conductive particles were insufficiently pressed, and the on-resistance was increased.
In comparative example 4, when the temporary pressure bonding step was performed without ultraviolet irradiation, the conductive particles were pressed into the temporary pressure bonding step at a high pressure to ensure conductivity, but the misalignment amount was increased.
Comparative example 5 the ultraviolet illuminance in the temporary pressure bonding step was as low as 2mW/cm2Therefore, the curing reaction of the binder resin does not proceed, but the viscosity is low, so that the conductivity can be ensured by the press-fitting of the conductive particles, but the misalignment amount becomes large.
In comparative example 6, the ultraviolet illuminance in the temporary pressure bonding step was as high as 25mW/cm2The misalignment can be suppressed, and the curing reaction of the binder resin excessively proceeds on the other surface, so that the conductive particles cannot be bonded in the main bonding stepThe seed is sufficiently pressed in, and the on-resistance is increased.
In comparative example 7, since the ultraviolet irradiation time in the temporary pressure bonding step was as short as 0.2 seconds, the curing reaction of the binder resin did not proceed, and the viscosity was low, and therefore the conductivity could be ensured by the press-fitting of the conductive particles, but the misalignment amount was large.
In comparative example 8, the ultraviolet irradiation time in the temporary pressure bonding step was as long as 2.5 seconds, and therefore, a large misalignment of alignment could be suppressed, but the curing reaction of the binder resin proceeded excessively, and the conductive particles could not be sufficiently pushed in the main pressure bonding step, and the on-resistance increased.
As described above, it is possible to suppress misalignment without inhibiting the conductive particles from being pressed in by increasing the viscosity of the binder resin appropriately in advance in the temporary pressure bonding step. It is also understood that the irradiation amount of light in the temporary pressure bonding step is preferably 3 to 20% of the irradiation amount of light in the main pressure bonding step.
[ examples 7 to 9]
In examples 7 to 9, an anisotropic conductive film was attached to the ITO-plated glass in the same manner as in examples 1, 2, and 5, and the entire surface of the film was irradiated with ultraviolet light from the anisotropic conductive film side under the same conditions as in the temporary pressure bonding (first irradiation). An evaluation IC was placed on the anisotropic conductive film after the ultraviolet irradiation, and temporary pressure bonding (light irradiation) was performed under the same conditions as in examples 1, 2, and 5. The irradiation from the anisotropic conductive film side is performed using a light source substantially the same as the light irradiation from the transparent substrate side. Then, the sample was subjected to full-scale pressure bonding to obtain a sample of a connected body. In examples 7 to 9, results substantially equivalent to those in examples 1, 2 and 5 were obtained.
< embodiment 2 >
In this example, a transparent substrate (chrome/aluminum plated glass: evaluation substrate) and an electronic component (flexible substrate (FPC): evaluation device) were connected to each other under different irradiation conditions of ultraviolet rays in the temporary pressure bonding step, and a connected body was obtained. Then, for each of the obtained connected body samples, the on-resistance value (Ω) between the electrode of the flexible substrate and the electrode (aluminum) of the chromium/aluminum plated glass at the initial stage of connection and after the reliability test, the amount of the gap between the surface of the adhesive layer and the surface of the flexible substrate after the reliability test, and the misalignment amount were measured.
In connection of chromium/aluminum plated glass and a flexible substrate, the following anisotropic conductive film was used as an adhesive. First, 30 parts by mass of a phenoxy resin (YP-70, manufactured by Nippon Tekken chemical Co., Ltd.), 30 parts by mass of a liquid epoxy resin (EP 808, manufactured by Mitsubishi chemical Co., Ltd.), 20 parts by mass of a solid epoxy resin (YD 014, manufactured by Nippon Tekken chemical Co., Ltd.), 3 parts by mass of conductive particles (AUL 704, manufactured by Anhui chemical Co., Ltd.), 5 parts by mass of a photo-cationic curing agent (LW-S1, manufactured by SAN-APRO Co., Ltd.), and 10 parts by mass of a cationic curing agent (SI-60L, manufactured by Sanshin chemical Co., Ltd.) were uniformly mixed by using a stirring apparatus. The mixed solution was applied to a release-treated PET film (thickness: 50 μm) and formed into a film having a thickness of 20 μm. Thereby, an anisotropic conductive film was obtained.
As the flexible substrate, 200 μmP or 50 μmP (Line/Space ═ 1/1), Cu 8 μmt — Sn plating, and 38 μmt-S' perflex base material were used.
As the chromium/aluminum plating glass, aluminum pattern glass (200. mu. mP or 50. mu. mP, thickness 1.1 mm) was used.
[ example 10]
An anisotropic conductive film having a width of 1.5mm was attached to the chromium/aluminum-plated glass, and the flexible substrate was aligned with the anisotropic conductive film. From the chromium/aluminum-plated glass side of the aligned laminate, an LED lamp (controller: ZUV-C20H, head unit: ZUV-H20 MB, manufactured by ZUV-212L, OMRON Co.) having a maximum light emission wavelength at 360nm was used at an illuminance of 40mW/cm2Was subjected to the irradiation for 1 second (dose: 40 mJ/cm)2) And (4) ultraviolet irradiation.
After the UV irradiation, a buffer material (Teflon (registered trademark) sheet having a thickness of 50 μm) was used as a thermocompression bonding tool (1.5 mm width), and the resultant was processed into a strip at 120 ℃ for 5 seconds and 6MPaHeating and pressing under the LED lamp, and heating and pressing for 3 s to obtain LED lamp with illuminance of 200mW/cm 22 seconds (exposure: 400 mJ/cm) from the chromium/aluminum-plated glass side2) And (4) ultraviolet irradiation.
(initial on-resistance value and on-resistance value after reliability test)
The initial on-resistance value and the on-resistance value after the reliability test were measured with the same method as in example 1 using a digital multimeter (trade name: digital multimeter 7561, manufactured by yokogawa electric corporation) for the obtained sample of the connected body. The initial on-resistance value was evaluated as "a", the initial on-resistance value was evaluated as "B", the initial on-resistance value was evaluated as "3 Ω to 5 Ω, and the initial on-resistance value was evaluated as" C ". In addition, the on-resistance value after the reliability test was evaluated as "a", the on-resistance value of 5 Ω to 10 Ω after the reliability test was evaluated as "B", and the on-resistance value of 10 Ω or more after the reliability test was evaluated as "C". Practically, the evaluation of the on-resistance value is preferably "a" or "B".
(gap after reliability test)
The resulting connected body sample was measured for the gap at the interface between the cured product of the anisotropic conductive film and the flexible substrate after the reliability test at 3 points, and the average value thereof was calculated. The gap was evaluated as "a" when the gap was 3.5 μm or less (70% or less of the average particle diameter of the conductive particles), as "B" when the gap was more than 3.5 μm and less than 4.5 μm (more than 70% and less than 90% of the average particle diameter of the conductive particles), and as "C" when the gap was more than 4.5 μm (90% or more of the average particle diameter of the conductive particles). Practically, the evaluation of the gap is preferably "a" or "B".
(amount of misalignment)
The obtained sample of the connected body was measured for the amount of misalignment in the width direction between the terminal 45 of the chromium/aluminum plated glass and the terminal 46 of the flexible substrate by a physical microscope (see fig. 12). The case where the misalignment amount was 3 μm or less was evaluated as "a", the case where the misalignment amount was more than 3 μm and less than 5 μm was evaluated as "B", and the case where the misalignment amount was 5 μm or more was evaluated as "C".
As a criterion for evaluating the misalignment, for example, as shown in FIG. 12, when terminals 45 and 46 having a connection width of 600 μm and a voltage of 50 μmP are assumed, the connection area per 1 wiring is set to approximately 10000 μm2The following condition is "NG". That is, when the misalignment amount is 8 μm or more, (25-8 μm × (600-8) μm ═ 10064 μm2) Is set to "NG". It is also assumed that the alignment tolerance of the device is about 3 μm, and it is determined that the misalignment is less than 5 μm. Although there is no practical problem even if the misalignment amount is 5 μm or more, from the viewpoint of quality control of the connection structure, the smaller the misalignment amount, the better the misalignment amount.
[ example 11]
Example 11 was conducted except that the ultraviolet irradiation condition before the main pressure bonding was changed to 20mW/cm illuminance2And 1 second (irradiation amount: 20 mJ/cm)2) The procedure of example 10 was repeated except that a linker sample was obtained.
[ example 12]
In example 12, except that the ultraviolet irradiation condition before the main pressure bonding was changed to 100mW/cm illuminance2And 1 second (exposure: 100 mJ/cm)2) The procedure of example 10 was repeated except that a linker sample was obtained.
Comparative example 9
Comparative example 9 was performed in the same manner as in example 10, except that the sample of the connected body was obtained without performing ultraviolet irradiation before main pressure bonding.
Comparative example 10
In comparative example 10, except that the condition of ultraviolet irradiation before main pressure bonding was changed to 8mW/cm in illuminance2And 1 second (exposure: 8 mJ/cm)2) The procedure of example 10 was repeated except that a linker sample was obtained.
Comparative example 11
In comparative example 11, except that the condition of ultraviolet irradiation before main pressure bonding was changed to 120mW/cm in illuminance2And 1 second (dose: 120 mJ/cm)2) The procedure of example 10 was repeated except that a linker sample was obtained.
[ example 13]
A sample of a linker was obtained in the same manner as in example 10, except that in example 13, a flexible substrate of 50. mu.mP was used instead of the flexible substrate of 200. mu.mP.
[ example 14]
In example 14, except that the ultraviolet irradiation condition before the main pressure bonding was changed to 8mW/cm2And 1 second (exposure: 8 mJ/cm)2) The same procedure as in example 13 was repeated except that a linker sample was obtained.
[ example 15]
In example 15, except that the ultraviolet irradiation condition before the main pressure bonding was changed to 60mW/cm illuminance2And 1 second (irradiation amount: 60 mJ/cm)2) The same procedure as in example 13 was repeated except that a linker sample was obtained.
Comparative example 12
Comparative example 12 was performed in the same manner as in example 13, except that the sample of the connected body was obtained without performing ultraviolet irradiation before main pressure bonding.
Comparative example 13
In comparative example 13, except that the condition of ultraviolet irradiation before main pressure bonding was changed to 4mW/cm in illuminance2And 1 second (exposure: 4 mJ/cm)2) The same procedure as in example 13 was repeated except that a linker sample was obtained.
Comparative example 14
In comparative example 14, except that the condition of ultraviolet irradiation before main pressure bonding was changed to 80mW/cm in illuminance2And 1 second (exposure: 80 mJ/cm)2) The same procedure as in example 13 was repeated except that a linker sample was obtained.
In the following table, "(1) before main pressure bonding" indicates the condition of light irradiation before main pressure bonding shown in (1) in fig. 13. Further, "(2) the time of final pressure bonding" indicates the condition of light irradiation at the time of final pressure bonding shown in (2) in fig. 13.
[ Table 2]
Figure 412274DEST_PATH_IMAGE008
In examples 10 to 12 in which the minimum inter-wiring distance of the flexible substrate exceeded 25 μm, the irradiation amount of light in the light irradiation step was set to 5 to 25% of the irradiation amount of light in the main pressure bonding step. From this, it was found that the evaluation of the initial on-resistance value, the on-resistance value after the reliability test, the gap after the reliability test, and the alignment deviation amount were all good.
In examples 13 to 15 in which the minimum inter-wiring distance of the flexible substrate was 25 μm or less, the irradiation amount of light in the light irradiation step was set to 2 to 15% of the irradiation amount of light in the main pressure bonding step. From this, it was found that the evaluation of the initial on-resistance value, the on-resistance value after the reliability test, the gap after the reliability test, and the alignment deviation amount were all good.
In comparative examples 9 and 12, since ultraviolet light was not irradiated in the light irradiation step, evaluation of the on-resistance value after the reliability test, the gap after the reliability test, and the misalignment of the flexible substrate was not good at the time of heating and pressing in the main pressure bonding step. In comparative examples 10 and 13, it is found that the evaluation of the on-resistance value after the reliability test and the evaluation of the gap after the reliability test are not good because the ultraviolet irradiation amount in the light irradiation step is too small compared to the ultraviolet irradiation amount in the main pressure bonding step. In addition, in comparative example 13, it was found that the evaluation of the misalignment of the flexible substrate was not good. These results are considered to be because the fluidity of the binder resin constituting the anisotropic conductive film is excessively increased when the heating and pressing in the main pressure bonding step are performed, and peeling in the interface between the anisotropic conductive film and the flexible substrate is likely to occur when the residual stress of the flexible substrate is released when the heating tool is released from the pressure in the state in which the wirings of the flexible substrate are bent.
In comparative examples 11 and 14, it was found that the initial on-resistance value, the on-resistance value after the reliability test, and the evaluation of the gap after the reliability test were not good because the amount of ultraviolet irradiation in the light irradiation step was too large relative to the amount of ultraviolet irradiation in the main pressure bonding step. This is considered to be because the curing reaction of the binder resin constituting the anisotropic conductive film is excessively progressed, and the conductive particles cannot be sufficiently pressed in the main pressure bonding step.
[ examples 16 to 19]
In examples 16 to 19, an anisotropic conductive film was attached to chromium/aluminum-plated glass in the same manner as in examples 10, 11, 13, and 14, and 20mJ/cm was applied to the entire surface of the anisotropic conductive film from the anisotropic conductive film side2(5% of the main pressure bonding) was irradiated with ultraviolet rays (first irradiation). The irradiation from the anisotropic conductive film side is performed using a light source substantially the same as the light irradiation from the transparent substrate side. After the irradiation of ultraviolet rays, the flexible substrate is aligned on the anisotropic conductive film to obtain a laminate. The laminate was subjected to light irradiation and main pressure bonding under the same conditions as in examples 10, 11, 13, and 14. Results substantially equal to those in examples 10, 11, 13 and 14 were obtained in examples 16 to 19.
[ examples 20 to 29]
In examples 20 to 29, as in examples 10 to 19, an anisotropic conductive film was bonded to chromium/aluminum-plated glass, and when the temporary pressure bonding step was performed with light irradiation from the transparent substrate side, the same operation was repeated except that the pressing was performed at 60 ℃ and 1MPa, and the final pressure bonding was performed. Results substantially equal to those in examples 10 to 19 were obtained in examples 20 to 29.
Description of the reference symbols
1 an anisotropic conductive film; 2 stripping the film; 3a binder resin layer; 4 conductive particles; 10 a liquid crystal display panel; 11. 12a transparent substrate; 13 sealing material; 14 liquid crystal; 15 a panel display section; 16. 17a transparent electrode; 18a liquid crystal driving IC; 20 COG mounting portions; 21a flexible substrate; 22 FOG mounting portion; 24 an alignment film; 25. 26 a polarizing plate; 30 heating the pressing head; 31 an ultraviolet irradiator; 42 salient points; 43 wiring; a 44 gap; 45. 46 terminal.

Claims (19)

1. A method for manufacturing a connected body, comprising:
an adhesive preparation step of providing a circuit connection adhesive containing a photopolymerization initiator on a transparent substrate;
a light irradiation step of disposing an electronic component on the transparent substrate via the circuit-connecting adhesive and irradiating the circuit-connecting adhesive with light; and
a main bonding step of heating and irradiating light while pressing the electronic component against the transparent substrate,
the irradiation amount of light in the light irradiation step is less than the irradiation amount of light in the primary pressure bonding step, and is 3 to 20% of the irradiation amount in the primary pressure bonding step.
2. The method for producing a connected body according to claim 1,
between the adhesive agent disposing step and the light irradiation step, there is further provided a pre-irradiation step of irradiating the entire surface of the adhesive agent for circuit connection with light from the side of the adhesive agent for circuit connection,
the total light irradiation amount of the preliminary irradiation step and the light irradiation step is smaller than the light irradiation amount of the main pressure bonding step.
3. The method for producing a connected body according to claim 1 or 2, wherein the light irradiation step irradiates light from the transparent substrate side.
4. The method for manufacturing a connected body according to claim 1 or 2, wherein in the light irradiation step, an irradiation amount of light is changed in accordance with a minimum inter-wiring distance of the electronic component.
5. The method for producing a connected body according to claim 1 or 2, wherein the irradiation time of light in the light irradiation step is 1/5 or less with respect to the pressure-bonding time in the main pressure-bonding step.
6. A method for manufacturing a connected body, comprising:
an adhesive preparation step of providing a circuit connection adhesive containing a photopolymerization initiator on a transparent substrate;
a temporary pressure bonding step of disposing an electronic component on the transparent substrate via the circuit-connecting adhesive, and pressing the electronic component against the transparent substrate and irradiating the circuit-connecting adhesive with light; and
a main bonding step of heating and irradiating light while pressing the electronic component against the transparent substrate,
the irradiation amount of light in the temporary pressure bonding step is less than that in the main pressure bonding step, and is 3 to 20% of the irradiation amount in the main pressure bonding step.
7. The method of manufacturing a connected body according to claim 6,
between the adhesive agent disposing step and the temporary pressure bonding step, there is further provided a pre-irradiation step of irradiating the entire surface of the adhesive agent for circuit connection with light from the side of the adhesive agent for circuit connection,
the total light irradiation amount of the preliminary irradiation step and the temporary pressure bonding step is smaller than the light irradiation amount of the main pressure bonding step.
8. The method for producing a connected body according to claim 6 or 7, wherein the temporary bonding step is performed by light irradiation from the transparent substrate side.
9. The method for manufacturing a connected body according to claim 6 or 7, wherein in the temporary bonding step, an irradiation amount of light is changed in accordance with a minimum inter-wiring distance of the electronic component.
10. The method for producing a connected body according to claim 6 or 7, wherein the irradiation amount of light in the temporary pressure bonding step is 3 to 20% of the irradiation amount of light in the primary pressure bonding step.
11. The method for producing a connected body according to claim 10, wherein the illuminance of light in the temporary pressure bonding step is 3 to 20mW/cm2。
12. The method for producing a connected body according to claim 10, wherein the irradiation time of light in the temporary pressure bonding step is 0.5 to 2 seconds.
13. The method for manufacturing a connected body according to claim 6 or 7, wherein the pressing force applied to the electronic component in the temporary bonding step is 40 to 90% of the pressing force applied to the electronic component in the main bonding step.
14. The method for manufacturing a connected body according to claim 6 or 7, wherein the temporary bonding step starts light irradiation while the bonding tool abuts against the pressing surface of the electronic component.
15. The method for manufacturing a connected body according to claim 6 or 7, wherein light irradiation of the adhesive for circuit connection is performed from the adhesive disposing step.
16. The method for manufacturing a connected body according to claim 6 or 7, wherein a bonding temperature of the electronic component in the temporary bonding step is equal to a bonding temperature of the electronic component in the main bonding step.
17. A method for connecting electronic components, comprising:
an adhesive preparation step of providing a circuit connection adhesive containing a photopolymerization initiator on a transparent substrate;
a light irradiation step of disposing an electronic component on the transparent substrate via the circuit-connecting adhesive and irradiating the circuit-connecting adhesive with light; and
a main bonding step of heating and irradiating light while pressing the electronic component against the transparent substrate,
the irradiation amount of light in the light irradiation step is less than the irradiation amount of light in the primary pressure bonding step, and is 3 to 20% of the irradiation amount in the primary pressure bonding step.
18. The method of connecting an electronic component as claimed in claim 17, wherein the light irradiation step is a temporary pressure bonding step of disposing an electronic component on the transparent substrate via the adhesive for circuit connection, and pressing the electronic component against the transparent substrate and irradiating the adhesive for circuit connection with light.
19. A connector produced by the method according to any one of claims 1 to 16.
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