CN107078071A - The manufacture method of connector, the connection method of electronic unit, connector - Google Patents

The manufacture method of connector, the connection method of electronic unit, connector Download PDF

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Publication number
CN107078071A
CN107078071A CN201680005144.3A CN201680005144A CN107078071A CN 107078071 A CN107078071 A CN 107078071A CN 201680005144 A CN201680005144 A CN 201680005144A CN 107078071 A CN107078071 A CN 107078071A
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China
Prior art keywords
mentioned
light irradiation
light
connector
electronic unit
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Granted
Application number
CN201680005144.3A
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Chinese (zh)
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CN107078071B (en
Inventor
梶谷太郎
梶谷太一郎
平尾未希
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Dexerials Corp
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Dexerials Corp
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Priority claimed from PCT/JP2016/051595 external-priority patent/WO2016117613A1/en
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
    • C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Liquid Crystal (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)
  • Combinations Of Printed Boards (AREA)

Abstract

By using the bonding agent of light-cured type, the connection of electronic unit is carried out in low temperature, and prevent the alignment of electronic unit from deviateing.Have：Adhesive for circuit connection 1 containing Photoepolymerizationinitiater initiater is arranged on to the bonding agent arrangement step on transparency carrier 12；Electronic unit 18 is configured on transparency carrier 12 via adhesive for circuit connection 1, and carries out the interim crimping process of light irradiation of the electronic unit 18 to the pressing of transparency carrier 12 and to adhesive for circuit connection 1；And while electronic unit 18 is pressed transparency carrier, while heated and light irradiation formal crimping process, the exposure of the light in interim crimping process is less than the exposure of the light in formal crimping process.

Description

The manufacture method of connector, the connection method of electronic unit, connector
Technical field
The present invention relates to electronic unit transparent base is connected to via the adhesive for circuit connection containing Photoepolymerizationinitiater initiater The manufacture method of connector on plate, via the adhesive for circuit connection containing Photoepolymerizationinitiater initiater electronic unit is connected to Connection method on transparency carrier and the connector manufactured using this method.The application with Japan January 20 in 2015 Japanese publication Patent 2015-8950 filed in day and in Japanese publication Patent filed in 20 days January in 2016 of Japan CLAIM OF PRIORITY based on 2016-8718, these applications are introduced into the application by referenced.
Background technology
In the past, as television set or PC monitors, portable phone, pocket game machine, tablet personal computer PC or vehicle-mounted The various display units of monitor etc., use liquid crystal display device more.In recent years, in such liquid crystal display device, from micro- From the viewpoint of small spacing, light and thin type etc., using the substrate that liquid crystal drive is directly installed on to liquid crystal display panel with IC On so-called COG（chip on glass）Or the flexible base board for being formed with liquid crystal display drive circuit is directly installed on liquid crystal display So-called FOG on the substrate of panel（film on glass）.
For example with the liquid crystal display device 100 of COG mounting means, as shown in figure 14, it is used for liquid crystal display with playing The function of tonic chord liquid crystal display panel 104, the liquid crystal display panel 104 have be made up of glass substrate etc. opposite one another two Block transparency carrier 102,103.Moreover, liquid crystal display panel 104 be provided with panel display unit 107, the panel display unit 107 be this two Transparency carrier 102,103 by the encapsulant 105 of frame-shaped come bonded to each other, and by two transparency carriers 102,103 and close Liquid crystal 106 has been enclosed in the space that closure material 105 is surrounded to form.
Transparency carrier 102,103 is formed with by ITO in two inner surfaces opposite one another in the way of crossing one another（Oxidation Indium tin）Etc. a pair of transparency electrodes 108,109 of the striated of composition.Moreover, two transparency carriers 102,103 cause it is two saturating by this The crossover sites of prescribed electrode 108,109 constitute the pixel of the least unit as liquid crystal display.
Among two transparency carriers 102,103, a transparency carrier 103 is formed as planar dimension more than another transparency carrier 102, it is formed with the portion of terminal 109a of transparency electrode 109 in the edge part 103a of the transparency carrier 103 significantly formed.Separately Outside, in two transparency electrodes 108,109, the alignment films 111,112 for being carried out set friction treatment are formed with, with can be by this The orientation at initial stage of the regulation liquid crystal molecule of alignment films 111,112.And then, in the outside of two transparency electrodes 108,109, it is configured with a pair Polarization plate 118,119, so that the transmitted light of the light source 120 from backlight etc. can be provided by this two polarization plate 118,119 Direction of vibration.
On portion of terminal 109a, liquid crystal drive IC115 is connected to via the hot pressing of anisotropic conductive film 114.Anisotropy Conducting film 114 is mixed into electroconductive particle in the adhesive resin of thermohardening type and is set to membranaceous, by being heated between two conductors Crimp and with conducting between conducting particles acquirement conductor, the mechanical connection between conductor is kept by adhesive resin.Liquid crystal drive Being turned into IC115 can make the orientation of liquid crystal partly change and enter by applying liquid crystal drive voltage to pixel selection The set liquid crystal display of row.In addition, as the bonding agent for constituting anisotropic conductive film 114, becoming usually using reliability highest Thermocurable bonding agent.
By liquid crystal drive with IC115 via situation from such anisotropic conductive film 114 to portion of terminal 109a connections Under, first, by interim crimping unit (not shown), anisotropic conductive film 114 is crimped on to the end of transparency electrode 109 temporarily On sub-portion 109a.Then, liquid crystal drive is carried in anisotropic conductive film 114 with after IC115, passes through hot pressing as shown in figure 15 The thermo-compression bonding unit 121 of joint etc. by liquid crystal drive with IC115 together with anisotropic conductive film 114 to portion of terminal 109a sides Pressing, and thermo-compression bonding unit 121 is generated heat.The heating produced by the thermo-compression bonding unit 121, anisotropic conductive film 114 Heat cure is caused to be reacted, thus, liquid crystal drive is adhered on portion of terminal 109a with IC115 via anisotropic conductive film 114.
However, in the connection method of such use anisotropic conductive film, hot pressed temperature is higher, driven for liquid crystal Employing the thermal shock of IC115 etc. electronic unit or transparency carrier 103 can become big.And then, anisotropic conductive film is in connection Afterwards, when temperature drop is to normal temperature, due to the temperature difference, adhesive shrinks, can in the portion of terminal 109a of transparency carrier 103 Can occur warpage.Accordingly, there exist the bad worry for causing irregular or liquid crystal drive IC115 the bad connection of display etc..
In patent document 2, describe in the adhesive bonds connecting object thing and connected object via light-cured type In the method for thing, after the heat pressurization of heating press head is started with, the situation of light irradiation is carried out.
Prior art literature
Patent document
Patent document 1：Japanese Unexamined Patent Publication 2008-252098 publications
Patent document 2：Japanese Unexamined Patent Publication 2012-253282 publications.
The content of the invention
The invention problem to be solved
Therefore, additionally provide and used ultraviolet instead of the anisotropic conductive film 114 of such bonding agent using thermohardening type The connection method of the bonding agent of line curing type.In the connection method using the bonding agent of ultraviolet hardening, bonding agent is because of warm And soften flowing, it is heated only to lead to capturing between the portion of terminal 109a and liquid crystal drive IC115 of transparency electrode 109 electrode Sufficient temperature for conductive particles, and solidify bonding agent by ultraviolet irradiation.
In the connection method of the bonding agent of such use ultraviolet hardening, without in order that adhesive resin solidifies And hyperpyrexia is placed in, can prevent from causing liquid crystal drive with the thermal shock of IC115 or transparency carrier 103 is bad.In order to carry out Using the law temperature joining of the bonding agent of such ultraviolet hardening, it is necessary to reduce the anisotropic conductive film of ultraviolet hardening Adhesive resin viscosity in itself.
If however, the viscosity of reduction adhesive resin, worry carry liquid crystal drive IC115 etc. electronic unit, And during by being thermally compressed unit 112 to be pressed, or when thermo-compression bonding unit 112 is left from liquid crystal drive with IC115 Alignment deviates.Moreover, distance narrowization between small spacing, terminal is carried out in COG connections etc., therefore alignment deviation may The portion of terminal 109a for the transparency carrier 103 being connected as the electrode terminal for causing liquid crystal drive IC115 and with the electrode terminal The spacing of the portion of terminal abutted becomes factor short-circuit between narrow, the short circuit via electroconductive particle terminal.
In addition, relatively low connecting the rigidity as flexible base board 21 to transparency carrier 12 using anisotropic conductive film 1 In the case of electronic unit, as the technology described in patent document 2, if the viscosity in bonding agent is filled because of the heat of press head Point decline in the state of apply pressure, then crimping when, because in Figure 16 between the terminal 21a of the flexible base board 21 shown in arrow Bend and residual stress.Moreover, flexible base board 21 is when heating press head 30 leaves（Remove pressure（press out）When）Flexible base board 21 residual stress is released, as shown in figure 17, because the residual stress of flexible base board 21 makes to return to and pressing direction between terminal 21a The power of opposite direction can play a role.If moreover, the residual stress of flexible base board 21 is released, as shown in figure 18, becoming Between the terminal 21a of flexible base board 21, the adhesive resin layer 3 of anisotropic conductive film easily occurs with the interface of flexible base board 21 Peel off（Gap 44）.Such stripping is possible to involve conduction resistance value decline, anisotropic conductive film and the quilt of connector The bad connection of the bonding force decline of viscous thing etc..
Such as FOG anisotropic conductive film, in order to ensure adhesive strength, is fully soaked out when preferably using crimping Soft adhesive resin, the i.e. low adhesive resin of viscosity.If however, the viscosity of adhesive resin is excessively reduced, in pressure Flexible base board between being connected up when connecing can be more prone to flexure, as a result, the residual stress for having above-mentioned flexible base board discharges caused Influence more significantly exposed tendency.
The present invention is to solve the invention of above-mentioned problem, it is therefore intended that provided by using the bonding agent of light-cured type low Temperature is lower to be carried out the connection of electronic unit and prevents the alignment of electronic unit from deviateing and improving the manufacture of the connector of bad connection Method, the connection method of electronic unit and the connector manufactured using this method.
Scheme for solving problem
In order to solve above-mentioned problem, the manufacture method of connector involved in the present invention has：Photoepolymerizationinitiater initiater will be contained Adhesive for circuit connection bonding agent arrangement step on the transparent substrate is set；Via foregoing circuit connecting adhesive, By electronic unit configuration on above-mentioned transparency carrier, the light irradiation work to the light irradiation of foregoing circuit connecting adhesive is carried out Sequence；And while above-mentioned electronic unit is pressed above-mentioned transparency carrier, while heated and light irradiation formal pressure The exposure for connecing the light in process, above-mentioned light irradiation process is less than the exposure of the light in above-mentioned formal crimping process.
In addition, the manufacture method of connector involved in the present invention, has：By the circuit connection containing Photoepolymerizationinitiater initiater With the bonding agent arrangement step of bonding agent setting on the transparent substrate；Via foregoing circuit connecting adhesive, by electronic unit Configuration carries out above-mentioned electronic unit and connects use to the pressing of above-mentioned transparency carrier and to foregoing circuit on above-mentioned transparency carrier The interim crimping process of the light irradiation of bonding agent；And while above-mentioned electronic unit is pressed above-mentioned transparency carrier, one Side heated and light irradiation formal crimping process, the exposure of the light in above-mentioned interim crimping process is less than above-mentioned formal pressure Connect the exposure of the light in process.
In addition, the connection method of electronic unit involved in the present invention, has：Circuit containing Photoepolymerizationinitiater initiater is connected Connect the bonding agent arrangement step on the transparent substrate with bonding agent setting；Via foregoing circuit connecting adhesive, by the ministry of electronics industry Part is configured on above-mentioned transparency carrier, carries out the light irradiation process to the light irradiation of foregoing circuit connecting adhesive；And one While above-mentioned electronic unit is pressed above-mentioned transparency carrier, while heated and light irradiation formal crimping process, on The exposure for stating the light in light irradiation process is less than the exposure of the light in above-mentioned formal crimping process.
In addition, connector involved in the present invention is manufactured by the connection method of above-mentioned electronic unit.
Invention effect
According to the present invention, by the adhesive for circuit connection containing Photoepolymerizationinitiater initiater with appropriate exposure irradiation light come It is allowed to start solidification, the interim crimping of electronic unit can be carried out in the state of viscosity rising.Thus, in light irradiation process （Interim crimping process）Or in formal crimping process, when electronic unit is crimped instrument pressing or crimping tool is from the ministry of electronics industry When part leaves, the alignment deviation that electronic unit deviates from commitment positions can be suppressed.
Brief description of the drawings
[Fig. 1] Fig. 1 is the sectional view for showing to be applicable the installation procedure of the present invention.
[Fig. 2] Fig. 2 is the sectional view for showing anisotropic conductive film.
[Fig. 3] Fig. 3 is the sectional view for the interim adhering processes for showing anisotropic conductive film.
[Fig. 4] Fig. 4 is the sectional view for showing the process by liquid crystal drive IC configurations on the transparent substrate.
[Fig. 5] Fig. 5 is the sectional view for the interim crimping process for showing liquid crystal drive IC.
[Fig. 6] Fig. 6 is the sectional view for the formal crimping process for showing liquid crystal drive IC.
[Fig. 7] Fig. 7 is the sectional view for showing the connector of liquid crystal drive IC connections on the transparent substrate.
[Fig. 8] Fig. 8 is to show to configure one of the process of flexible base board across anisotropic conductive film on the transparent substrate The sectional view of example.
[Fig. 9] Fig. 9 be show by flexible base board across anisotropic conductive film configure on the transparent substrate after, to it is each to Anisotropic conductive film carries out the sectional view of an example of the process of ultraviolet irradiation.
[Figure 10] Figure 10 is the sectional view of an example of the formal crimping process for showing flexible base board.
[Figure 11] Figure 11 is the figure for illustrating the assay method of embodiment and the conducting resistance involved by comparative example.
[Figure 12] Figure 12 is the assay method for illustrating the alignment bias of the width of the terminal of connector sample Figure.
Light when [Figure 13] Figure 13 is for illustrating the light irradiation before the formal crimping in the 2nd embodiment and formal crimping The figure of the timing of irradiation and heat pressurization.
[Figure 14] Figure 14 is the sectional view for showing existing liquid crystal display panel.
[Figure 15] Figure 15 is the sectional view for the COG installation procedures for showing existing liquid crystal display panel.
[Figure 16] Figure 16 is shown in the manufacture method of existing flexible base board, one of the heating pressing process of layered product The sectional view of example.
[Figure 17] Figure 17 is shown in the manufacture method of existing flexible base board, and stress is released when heating tool removes pressure The sectional view of one example of the layered product of state.
[Figure 18] Figure 18 is shown in the manufacture method of existing flexible base board, releasing for residual stress occurs in flexible base board The sectional view of one example of the layered product for the state put.
Embodiment
Hereinafter, on one side referring to the drawings, while to be applicable the manufacture method of connector of the present invention, electronic unit connection side Method, connector are described in detail.In addition, the present invention is not limited in following embodiment, it is clear that do not departing from this hair Various changes can be carried out in the range of bright purport.In addition, accompanying drawing is schematical, there is ratio of each size etc. and reality Different situations.Specific size etc. should be judged with reference to the following description.Furthermore, it is to be understood that accompanying drawing also includes that each other The different part of the relation or ratio of this size.
The embodiment ＞ of ＜ the 1st
In the 1st following embodiment, to carry out the glass substrate to liquid crystal display panel, liquid crystal is installed as electronic unit The so-called COG of the IC chip of driving（chip on glass）Illustrated in case of installation.The liquid crystal display panel 10, as shown in figure 1, the two pieces of transparency carriers 11,12 being made up of glass substrate etc. are disposed facing, these transparency carriers 11,12 It is bonded to each other by the encapsulant 13 of frame-shaped.Moreover, liquid crystal display panel 10 is by the sky surrounded by transparency carrier 11,12 It is interior to enclose liquid crystal 14 and form panel display unit 15.
Transparency carrier 11,12 is formed with by ITO in two inner surfaces opposite one another in the way of crossing one another（Oxidation Indium tin）Etc. a pair of transparency electrodes 16,17 of the striated of composition.Moreover, two transparency electrodes 16,17, which turn into, passes through this two transparent electricity The crossover sites of pole 16,17 constitute the pixel of the least unit as liquid crystal display.
Among two transparency carriers 11,12, a transparency carrier 12 is formed as planar dimension more than another transparency carrier 11, In the edge part 12a of the transparency carrier 12 significantly formed, provided with installing liquid crystal drive IC18's as electronic unit COG installation portions 20, in addition near the outside of COG installation portions 20, liquid crystal drive is formed with provided with being installed as electronic unit The FOG installation portions 22 of the flexible base board 21 of circuit.
In addition, liquid crystal drive IC or liquid crystal display drive circuit, by pixel selection is applied liquid crystal drive voltage come The orientation of liquid crystal is set locally to change and set liquid crystal display can be carried out.
The portion of terminal 17a of transparency electrode 17 is formed with each installation portion 20,22.On portion of terminal 17a, as poly- containing light The adhesive for circuit connection for closing initiator connects liquid crystal drive IC18 or flexible base board using anisotropic conductive film 1 21.Anisotropic conductive film 1 contains electroconductive particle 4, is to electrically connect liquid crystal drive IC18 or flexibility via electroconductive particle 4 The electrode of substrate 21 is with forming the part in the portion of terminal 17a of the edge part 12a of transparency carrier 12 transparency electrode 17.This it is each to Anisotropic conductive film 1 is the bonding agent of ultraviolet hardening, is thermally compressed and is flowed, electroconductive particle by heating press head 30 described later 4 are collapsed under pressure in portion of terminal 17a and liquid crystal drive between IC18 or each electrode of flexible base board 21, utilize ultraviolet radiation device 31 Irradiation ultraviolet radiation, thus with electroconductive particle 4 collapse under pressure it is state cured.Thus, anisotropic conductive film 1 is by transparency carrier 12 It is electric, mechanically connected with IC18 or flexible base board 21 with liquid crystal drive.
In addition, in two transparency electrodes 16,17, the alignment films 24 for implementing set friction treatment are formed with, that can pass through The orientation at initial stage of the alignment films 24 regulation liquid crystal molecule.And then, in the outside of two transparency carriers 11,12, it is configured with a pair of polarizations Tabula rasa 25,26, so that the light source from backlight etc. can be provided by this two polarization plate 25,26（It is not shown）Transmitted light shake Dynamic direction.
[anisotropic conductive film]
Anisotropic conductive film（ACF：Anisotropic Conductive Film）1, as shown in Fig. 2 generally, as base The adhesive resin layer containing electroconductive particle is formed on the stripping film 2 of body material（Bond layer）3.Anisotropic conductive film 1 As shown in figure 1, in order to by make adhesive resin layer 3 between liquid crystal display panel 10 formation transparency carrier 12 transparent electricity Pole 17 and liquid crystal drive between IC18 or flexible base board 21, come connect liquid crystal display panel 10 and liquid crystal drive IC18 or Flexible base board 21 simultaneously is allowed to turn on and use.
As stripping film 2, the general such as poly terephthalic acid second two used in anisotropic conductive film can be used The matrix material of alcohol ester film etc..
The dispersed electro-conductive particle 4 into adhesive of adhesive resin layer 3 is formed.Adhesive contains film formation resin, solidification Property resin, curing agent, silane coupler etc., it is same with the adhesive used in common anisotropic conductive film.
As film formation resin, preferably mean molecule quantity is 10000~80000 or so resin.As film formation resin, The various resins of phenoxy resin, epoxy resin, modified epoxy, urethane resin etc. can be enumerated.Wherein, for film formation shape The viewpoint of state, connection reliability etc., particularly preferred phenoxy resin.
As curable resin, it is not particularly limited, epoxy resin, allyl resin etc. can be enumerated.
As epoxy resin, it is not particularly limited, can be suitably selected according to purpose.As concrete example, it can enumerate for example Naphthalene type epoxy resin, biphenyl type epoxy resin, phenolic resin varnish type epoxy resin, bisphenol-type epoxy resin, stilbene type epoxy resin, three Phenol methane type epoxy resin, Phenolic aralkyl epoxy resin, naphthol type epoxy resin, dicyclopentadiene type epoxy resin, Triphenylmethane type epoxy resin etc..These both can also individually combine two or more.
As allyl resin, it is not particularly limited, can be suitably selected according to purpose, as concrete example, example can be enumerated Such as methyl acrylate, ethyl acrylate, isopropyl acrylate, isobutyl acrylate, epoxy acrylate, diacrylate ethylene glycol Ester, diethyleneglycol diacrylate, trimethylolpropane trimethacrylate, dihydroxymethyl tricyclic decane diacrylate, 1,4- Double ［ the 4- (acryloyl-oxy ylmethoxy) of butanediol tetraacrylate, the acryloxy propane of 2- hydroxyls -1,3- two, 2,2- Phenyl ］ propane, 2,2- double ［ 4- (acryloyloxyethoxy) phenyl ］ propane, dicyclopentenyl acrylate, three ring certain herbaceous plants with big flowers bases Acrylate, tree-shaped (acryloyl-oxyethyl) isocyanuric acid ester, urethane acrylate, epoxy acrylate etc..These both may be used Can also individually combine two or more.
As curing agent, as long as being just not particularly limited for light-cured type, and can suitably it be selected according to purpose, but solid The property changed resin is preferred cationic class curing agent in the case of epoxy resin, or anionic species curing agent.In curability tree Fat is preferred radical type curing agent in the case of allyl resin.Curable resin can also possess epoxy resin and propylene respectively Resin.
As cationic curing agent, it is not particularly limited, can be suitably selected according to purpose, such as sulfonium can be enumerated Salt, salt etc., among these, optimization aromatic sulfonium salt.As radical type curing agent, it is not particularly limited, can be according to purpose And suitably select, such as organic peroxide can be enumerated.
As silane coupler, epoxies, Ammonia, sulfydryl/sulfide-based, ureide derivative etc. can be enumerated.By adding silicon Alkane coupling agent, improves the cementability in the interface of organic material and inorganic material.
As electroconductive particle 4, the known any electroconductive particle used in anisotropic conductive film can be enumerated.Make For electroconductive particle 4, various metal or metal alloy such as nickel, iron, copper, aluminium, tin, lead, chromium, cobalt, silver, gold can be enumerated Particle, metal oxide, carbon, graphite, glass, ceramics, plastics etc. particle surface coating metal particle or at this Particle of the further plating insulation film in surface of a little particles etc..In the situation of the particle of the surface coating metal to resin particle Under, as resin particle, such as epoxy resin, phenolic resin, allyl resin, acrylonitrile styrene can be enumerated（AS）Resin, benzene The particle of substituted melamine resin, divinylbenzene resinoid, styrene resin etc..
[manufacture method]
Then, the saturating of transparency carrier 12 is connected to via anisotropic conductive film 1 with IC18 or flexible base board 21 to liquid crystal drive The manufacturing process of connector on prescribed electrode 17 illustrates.
＜ concrete example 1-1 ＞
[interim adhering processes]
First, anisotropic conductive film 1 is pasted onto on transparency carrier 12 temporarily（Bonding agent arrangement step）.Paste temporarily it is each to The method of anisotropic conductive film, as shown in figure 3, in the way of adhesive resin layer 3 is turned into the side of transparency electrode 17, by anisotropy Conducting film 1 is configured in the transparency electrode 17 of transparency carrier 12.After adhesive resin layer 3 is configured in transparency electrode 17, For example adhesive resin layer 3 is heated and pressurizeed from the side of stripping film 2 with thermo-compression bonding tool, makes thermo-compression bonding tool from stripping film 2 are left, and stripping film 2 is peeled off from adhesive resin layer 3.In addition, the interim stickup of anisotropic conductive film 1 can both pass through heat The pressurization of crimping tool and light irradiation are carried out, and can also be carried out in the lump using heat pressurization and light irradiation.
[alignment process/interim crimping process]
Then, across anisotropic conductive film 1, liquid crystal drive is configured on transparency carrier 12 with IC18, liquid crystal drive is carried out With IC18 to the pressing of transparency carrier 12 and the light irradiation to anisotropic conductive film 1（Interim crimping process）.First, such as Fig. 4 It is shown, carry out alignment of the liquid crystal drive with IC18 and transparency electrode 17.Specifically, so that each portion of terminal of transparency electrode 17 17a configures liquid crystal drive IC with IC18 electrode terminal 18a with liquid crystal drive across the opposed mode of adhesive resin layer 3.
Then, as shown in figure 5, thermo-compression bonding tool 30 by being warming up to set heating-up temperature, across padded coaming 32, with Than formal crimping process described later more low temperature, low pressure heat pressurization liquid crystal drive IC18 upper surface, and by being arranged on The ultraviolet radiation device 31 of the rear side of transparency carrier 12 irradiates ultraviolet come the adhesive resin layer 3 to anisotropic conductive film 1 Line.
The hot pressed temperature of thermo-compression bonding tool 30 is set to adhesive resin layer display fusing before starting relative to solidification When viscosity（Minimum melt viscosity）Determined temperature ± 10~20 DEG C temperature（For example before and after 80 DEG C）.Thus, by transparent base The warpage of plate is suppressed to minimum, will not also apply infringement caused by heat to liquid crystal drive IC in addition.
The ultraviolet lighted from ultraviolet radiation device 31, the transparent supporting table of the glass etc. of transmission support transparency carrier 12 and Irradiated by the transparency carrier 12 that the supporting table is supported to adhesive resin layer 3.As the ultraviolet radiation device 31, it can use LED, mercury vapor lamp, metal halide lamp etc..
Here, it is preferred that in interim crimping process to anisotropic conductive film 1 irradiate ultraviolet irradiation amount（=ultraviolet Line illumination（mW/cm2）× irradiation time（Second））, less than the exposure of the light in formal crimping process, in being formal crimping process Exposure 3~20%.The exposure in formal crimping process is for example being set to 100mW/cm2, in the case of 1 second, face When crimping process in ultraviolet irradiation amount be preferably 3~15mW/cm2, 0.5~2 second.
In interim crimping process, preferably pass through minimum cloth wire spacing of the liquid crystal drive with IC18（space）（It is minimum convex Distance between point）To change the exposure of light.For example, distance is 8~20 μm of feelings between minimum wiring of the liquid crystal drive with IC18 Under condition, the exposure of the light in interim crimping process, the 4~20% of the exposure of the light in preferably formal crimping process.It is logical The condition of such light irradiation is crossed, the viscosity without the adhesive resin of adjustment anisotropic conductive film every time.
Additionally, it is preferred that the pressing force to liquid crystal drive IC18 in interim crimping process, in being formal crimping process To liquid crystal drive with the 40~90% of IC18 pressing force, more preferably 70~80%.
In interim crimping process, by, to the irradiation ultraviolet radiation of anisotropic conductive film 1, starting to glue with appropriate exposure The solidification of mixture resin bed 3, can carry out liquid crystal drive IC18 interim crimping in the state of lifting viscosity.Thus, In interim crimping process or formal crimping process described later, liquid crystal drive is hot pressed when bonding tool 30 is pressed or hot pressing with IC18 Bonding tool 30 from liquid crystal drive left with IC18 when, the alignment that liquid crystal drive IC18 deviates from commitment positions can be suppressed inclined From.
[formal crimping process]
Then, as shown in fig. 6, while liquid crystal drive is pressed transparency carrier 12 with IC18, while being pressurizeed and light Irradiation, so that liquid crystal drive is electric, mechanically connected with transparency carrier 12 with IC18（Formal crimping process）.Formal crimping work In sequence, by thermo-compression bonding tool 30, so that electrode terminal 18a and transparency electrode of the electroconductive particle 4 in liquid crystal drive IC18 The both constant-pressures seized on both sides by the arms between 17 portion of terminal 17a are pressurizeed.In addition, in formal crimping process, so that adhesive resin layer 3 The illumination and time irradiation ultraviolet radiation of solidification.
Thus, adhesive resin from liquid crystal drive with the IC18 electrode terminal 18a and portion of terminal 17a of transparency electrode 17 it Between flow out, also, can seek because electroconductive particle 4 is seized on both sides by the arms to turn on, adhesive resin is cured in this condition.Thus, As shown in fig. 7, as liquid crystal drive with IC18 electrically, the connector that is mechanically connected on transparency carrier 12 and form liquid crystal Show panel 10.
Now, according to this manufacturing process, by being crimped in interim crimping process to anisotropic conductive film 1 than formal The small exposure irradiation ultraviolet radiation of the exposure of light in process, makes the viscosity of adhesive resin improve to a certain degree, therefore energy Enough prevent when being pressurizeed using thermo-compression bonding tool 30 or when thermo-compression bonding tool 30 leaves when liquid crystal drive IC18 Alignment deviate.Thus, it is possible to prevent the liquid crystal drive of small spacing with IC18 electrode terminal 18a and with the electrode terminal The spacing for the portion of terminal that the portion of terminal 17a of the transparency electrode 17 of 18a connections is abutted becomes narrow, short via electroconductive particle 4 It is short-circuit between the terminal on road.
In addition, ultraviolet irradiation can also be since interim adhering processes.Now, the illumination of interim adhering processes can also Less than the illumination of interim crimping process.
＜ concrete example 1-2 ＞
This manufacture method can also carry out ultraviolet irradiation in above-mentioned interim crimping process from liquid crystal drive with IC18 sides, Rather than carry out ultraviolet irradiation from the side of transparency carrier 12.
＜ concrete example 1-3 ＞
This manufacture method can also have：Anisotropic conductive film 1 is arranged on the process on transparency carrier 12；In anisotropy The process that liquid crystal drive IC18 is configured on conducting film 1；The process for carrying out light irradiation with IC18 sides from liquid crystal drive（Light irradiation work Sequence）；And while liquid crystal drive is pressed transparency carrier 12 with IC18, while heated and light irradiation process （Formal crimping process）So that the exposure of the light in light irradiation process is less than the exposure of the light in formal crimping process.
＜ concrete example 1-4 ＞
Before and after the light irradiation process that this manufacture method can also be in concrete example 1-3, also with being pressed using heating tool Liquid crystal drive IC18 process.
＜ concrete example 1-5 ＞
This manufacture method can also be in concrete example 1-3, anisotropic conductive film 1 is arranged on the work on transparency carrier 12 Sequence and in anisotropic conductive film 1 configure liquid crystal drive between IC18 process, also with whole to anisotropic conductive film 1 The process that individual face carries out light irradiation.
＜ concrete example 1-6 ＞
This manufacture method can also have：Anisotropic conductive film 1 is arranged on the process on transparency carrier 12；From anisotropy The process that the side of conducting film 1 carries out light irradiation to the entire surface of anisotropic conductive film 1（First irradiation process）；After first irradiation process The configuration liquid crystal drive of anisotropic conductive film 1 IC18 process；The process that light irradiation is carried out from the side of transparency carrier 12（Light irradiation Process）；And while liquid crystal drive is pressed transparency carrier 12 with IC18, while heated and light irradiation process （Formal crimping process）So that the total of the exposure of first irradiation process and the light of light irradiation process is less than in formal crimping process Light exposure.
The embodiment ＞ of ＜ the 2nd
In 2nd embodiment, in the glass substrate of liquid crystal display panel, to be installed as electronic unit（FOG is installed）It is flexible Illustrated in case of substrate.In the 2nd embodiment, mark and the composition of the 1st embodiment identical label, with the 1 embodiment is synonymous.
[manufacture method of connector]
＜ concrete example 2-1 ＞
As this manufacture method of an example, have：By the process of anisotropic conductive film setting on the transparent substrate；Across Anisotropic conductive film, by flexible base board configuration on the transparent substrate, and carries out the work to the light irradiation of anisotropic conductive film Sequence；And while flexible base board is pressed transparency carrier, while heated and light irradiation process.
[interim adhering processes]
Interim adhering processes same with the interim adhering processes in the 1st above-mentioned embodiment can be carried out.
[light irradiation process]
In light irradiation process, such as shown in figure 8, across anisotropic conductive film 1, flexible base board is configured on transparency carrier 12 21, carry out the light irradiation to anisotropic conductive film 1.On light irradiation, such as shown in figure 9, can be by configuring transparent The ultraviolet radiation device 31 of the side of substrate 12 carrys out the irradiation ultraviolet radiation of adhesive resin layer 3 to anisotropic conductive film 1.Light irradiation It can carry out, rather than be carried out from the side of transparency carrier 12 from the side of flexible base board 21.
In light irradiation process, the ultraviolet irradiation amount irradiated to anisotropic conductive film 1, less than formal crimping described later The exposure of light in process.In addition, in light irradiation process, preferably being changed by distance between the minimum wiring of flexible base board 21 The exposure of light.For example, in the case that distance is more than 25 μm between the minimum wiring of flexible base board 21, preferred illumination is penetrated in process Light exposure be formal crimping process in light exposure 5~25%, more preferably 5~15%.In addition, for example, In the case that distance is less than 25 μm between the minimum wiring of flexible base board 21, the exposure for the light that preferred illumination is penetrated in process is 2~15%, more preferably the 5~10% of the exposure of light in formal crimping process.
The ultraviolet illumination and ultraviolet irradiation time irradiated in light irradiation process, can meet above-mentioned condition In the range of suitably select.For example, ultraviolet illumination can be made to be 1~400mW/cm2, make ultraviolet irradiation time be 0.5~2 Second.Particularly, from the viewpoint of anisotropic conductive film 1 does not solidify completely before formal crimping process, light irradiation process In light irradiation time, preferably with respect to the crimping time in formal crimping process be less than 1/5.
[formal crimping process]
In formal crimping process, such as shown in Figure 10, while flexible base board 21 is pressed transparency carrier 17, on one side Heated and light irradiation.Thus, flexible base board 21 is made to be connected with transparency carrier 17, for example, being connected to as flexible base board 21 Connector on transparency carrier 17, forms liquid crystal display panel.
In formal crimping process, first, flexible base board 21 and the alignment of transparency electrode 17 are preferably carried out.Specifically, So that the portion of terminal 21a of each portion of terminal 17a of transparency electrode 17 and flexible base board 21 is across the opposed side of adhesive resin layer 3 Formula, configures flexible base board 21.
Then, by being warming up to the thermo-compression bonding tool 30 of set heating-up temperature, the hot pressurized flexible via padded coaming 32 The upper surface of substrate 21, and anisotropy is led by the ultraviolet radiation device 31 for the rear side for being arranged on transparency carrier 12 The irradiation ultraviolet radiation of adhesive resin layer 3 of electrolemma 1.Heat pressurization in formal crimping process is so that electroconductive particle 4 is in flexibility The both constant-pressures seized on both sides by the arms between the portion of terminal 21a of substrate 21 and the portion of terminal 17a of transparency electrode 17 are pressurizeed.In addition, formal Light irradiation in crimping process is carried out under conditions of it can solidify adhesive resin layer 3.
According to the manufacture method of such connector, by making the exposure of the light in light irradiation process be less than formal crimping The exposure of light in process, makes the viscosity of the adhesive resin of anisotropic conductive film 1 improve one before formal crimping process Determine degree, therefore, it is possible to prevent when being pressurizeed using thermo-compression bonding tool 30 or when thermo-compression bonding tool 30 leaves when it is soft Property substrate 21 alignment deviate.
In addition, according to this manufacture method, in crimping, the shadow that the residual stress release band of flexible base board is come can be suppressed Ring, therefore, it is possible to suppress the stripping in the adhesive resin layer of anisotropic conductive film and the interface of flexible base board.Therefore, it is possible to Suppress the connection of the decline of bonding force of decline, anisotropic conductive film and adherend of the conduction resistance value of connector etc. not It is good.
In addition, according to this manufacture method, even if not being the distributing or minimum wiring spacing of each control flexible base board From and adjust the viscosity of the adhesive resin of anisotropic conductive film, also releasing for residual stress can be suppressed according to the condition of light irradiation Put the influence brought.Therefore, it is possible to further improve the manufacture efficiency of connector.
In addition, in above-mentioned light irradiation process, thermo-compression bonding tool can also be utilized, via padded coaming, while with than Formal crimping process more low temperature, low pressure carry out hot pressurization, while by ultraviolet radiation device 31 come to anisotropic conductive film 1 The irradiation ultraviolet radiation of adhesive resin layer 3.The hot pressed temperature and pressing force of thermo-compression bonding tool, can be set to for example with it is above-mentioned The same condition of interim crimping process in 1st embodiment.
＜ concrete example 2-2 ＞
Before and after the light irradiation process that this manufacture method can also be in concrete example 2-1, also with being pressed by heating tool The process of flexible base board 21.
＜ concrete example 2-3 ＞
This manufacture method can also be in the process being arranged on the anisotropic conductive film 1 in concrete example 2-1 on transparency carrier 12 Between process with configuring flexible base board 21, also with the process that light irradiation is carried out to the entire surface of anisotropic conductive film 1.
＜ concrete example 2-4 ＞
This manufacture method can also have：Anisotropic conductive film 1 is arranged on to the interim adhering processes on transparency carrier 12；It is right The process that the entire surface of anisotropic conductive film 1 carries out light irradiation（First irradiation process）；Anisotropy after first irradiation process is led The process that flexible base board 21 is configured on electrolemma 1；The process that light irradiation is carried out from the side of transparency carrier 12（Light irradiation process）；And one While flexible base board 21 is pressed transparency carrier 12, while heated and light irradiation process（Formal crimping process）, So that the exposure of total light being less than in formal crimping process of the exposure of first irradiation process and the light of light irradiation process.
Embodiment
The embodiment ＞ of ＜ the 1st
Then, the embodiment to this technology is illustrated.In the present embodiment, for making the ultraviolet in interim crimping process Irradiation condition is different and manufactures transparency carrier and each connector sample of IC chip, determine connection initial stage and failtests IC chip afterwards and the conduction resistance value of the transparency electrode of transparency carrier（Ω）And the alignment bias of IC chip（μm）.
As bonding agent used in connection, prepare by the bonding containing photoacid generator and cationically polymerizable compound The anisotropic conductive film that agent resin bed is constituted.
The adhesive resin layer utilizes ethyl acetate, toluene, will
Phenoxy resin（YP-50：Nippon Steel ＆ Sumitomo Metal Corporation's system）45 mass parts；
Isocyanuric acid EO modified diacrylates（M-215：Toagosei Co., Ltd's system）45 mass parts；
Silane coupler（KBM-403：Shin-Etsu Chemial Co., Ltd's system）2 mass parts
Optical free radical producing agent（IRGACURE 369：BASF JAPAN Co. Ltd. systems）8 mass parts,
Mixed solution is made in the way of solid portion is turned into 50%, and so that particle density turns into about 50,000/mm2 Mode dispersed electro-conductive particle（AUL704：4 μm of mean particle diameter, Sekisui Chemical Co., Ltd's system）.This is mixed Solution is coated on the PET film of 50 μm of thickness, is dried 5 minutes in 70 DEG C of baking boxs, so as to be configured to the membranaceous of 20 μm of thickness.
As element is evaluated, use
Profile：1.8mm×20mm；
Bump height：15μm；
Bump size：30×60μm（10 μm of distance between minimum salient point）
Evaluation IC.In addition, salient point is in the inner side for evaluating the long side direction both ends with IC profiles, so that the short brink of salient point The mode parallel with IC profile long side directions with evaluating is arranged.The distance between salient point in the orientation is this evaluation element Distance between minimum salient point.
The evaluation matrix material connected as evaluation with IC, employs thickness 0.5mm ITO plating glass.
Evaluation IC is configured across above-mentioned anisotropic conductive film in the glass substrate, the heat using thermo-compression bonding tool is carried out Pressurization and pass through ultraviolet radiation device（ZUV-C30H：OMRON Co. Ltd. systems）Irradiation ultraviolet radiation, carry out temporarily crimping and just Formula is crimped, and forms connector sample.
Interim crimping condition embodiment 1~6, comparative example 1~8 be 80 DEG C, 2MPa, 2 seconds, in thermo-compression bonding work during pressing Have evaluate between IC as padded coaming across 50 μm of thickness teflon（TEFLON）（Registration mark）Piece.In addition, purple Outside line is irradiated to be started simultaneously at the heating pressurization using thermo-compression bonding tool.Ultraviolet during interim crimping is irradiated from glass substrate side Carry out.
Formal crimping condition embodiment 1~6, comparative example 1~8 be 100 DEG C, 80MPa, 5 seconds, in thermo-compression bonding during pressing Instrument and evaluate between IC as padded coaming across 50 μm of thickness teflon（Registration mark）Piece.In addition, ultraviolet shines Penetrate since using thermo-compression bonding tool carry out heating pressurization after 4 seconds start, irradiation time be 1 second, illumination is 100mW/cm2.Formally Ultraviolet irradiation during crimping is carried out from glass substrate side.
Then, for the connector sample involved by each embodiment and comparative example, conduction resistance value at initial stage is determined（Ω） And the conduction resistance value after failtests（Ω）.The condition of failtests is 85 DEG C of 85%RH500hr.Conduction resistance value Determine, as shown in figure 11, the wiring 43 of pair ITO plating glass being connected with evaluation with IC salient point 42 connects digital multimeter, Conduction resistance value when flowing through electric current 2mA is determined with so-called 4 terminal method.
In addition, for the connector sample involved by each embodiment and comparative example, alignment is determined using stereomicroscope Bias.The permissible range of alignment bias is set to less than 1.0 μm.
[embodiment 1]
In embodiment 1, if the hot pressurized conditions in interim crimping process are 60MPa, 80 DEG C, ultraviolet irradiation condition is 3mW/ cm2, 1 second.Ultraviolet irradiation amount in the interim crimping process of embodiment 1, is the exposure in formal crimping process 3%.Connector sample involved by embodiment 1, its initial stage conducting resistance as little as 1.4 Ω, and the electric conduction after failtests Resistance is also 4.3 Ω.In addition, the alignment bias of the connector sample involved by embodiment 1 is 0.9 μm.
[embodiment 2]
In embodiment 2, if the hot pressurized conditions in interim crimping process are 60MPa, 80 DEG C, ultraviolet irradiation condition is 5mW/ cm2, 1 second.Ultraviolet irradiation amount in the interim crimping process of embodiment 2, is the exposure in formal crimping process 5%.Connector sample involved by embodiment 2, its initial stage conducting resistance as little as 1.0 Ω, the conducting resistance after failtests Also it is 4.1 Ω.In addition, the alignment bias of the connector sample involved by embodiment 2 is 0.7 μm.
[embodiment 3]
In embodiment 3, if the hot pressurized conditions in interim crimping process are 60MPa, 80 DEG C, ultraviolet irradiation condition is 15mW/cm2, 1 second.Ultraviolet irradiation amount in the interim crimping process of embodiment 3, is the exposure in formal crimping process 15%.Connector sample involved by embodiment 3, its initial stage conducting resistance as little as 1.2 Ω, the electric conduction after failtests Resistance is also 4.4 Ω.In addition, the alignment bias of the connector sample involved by embodiment 3 is 0.3 μm.
[embodiment 4]
In embodiment 4, if the hot pressurized conditions in interim crimping process are 60MPa, 80 DEG C, ultraviolet irradiation condition is 20mW/cm2, 1 second.Ultraviolet irradiation amount in the interim crimping process of embodiment 4, is the exposure in formal crimping process 20%.Connector sample involved by embodiment 4, its initial stage conducting resistance as little as 2.4 Ω, the electric conduction after failtests Resistance is also 4.4 Ω.In addition, the alignment bias of the connector sample involved by embodiment 4 is 0.3 μm.
[embodiment 5]
In embodiment 5, if the hot pressurized conditions in interim crimping process are 60MPa, 80 DEG C, ultraviolet irradiation condition is 10mW/cm2, 0.5 second.Ultraviolet irradiation amount in the interim crimping process of embodiment 5, is the irradiation in formal crimping process The 5% of amount.Connector sample involved by embodiment 5, its initial stage conducting resistance as little as 1.2 Ω, the conducting after failtests Resistance is also 4.5 Ω.In addition, the alignment bias of the connector sample involved by embodiment 5 is 0.6 μm.
[embodiment 6]
In embodiment 6, if the hot pressurized conditions in interim crimping process are 60MPa, 80 DEG C, ultraviolet irradiation condition is 10mW/cm2, 2 seconds.Ultraviolet irradiation amount in the interim crimping process of embodiment 6, is the exposure in formal crimping process 20%.Connector sample involved by embodiment 6, its initial stage conducting resistance as little as 1.3 Ω, the electric conduction after failtests Resistance is also 4.2 Ω.In addition, the alignment bias of the connector sample involved by embodiment 6 is 0.6 μm.
[comparative example 1]
In comparative example 1, if the hot pressurized conditions in interim crimping process are 7MPa, 50 DEG C, and without carrying out ultraviolet irradiation. Ultraviolet irradiation amount in the interim crimping process of comparative example 1, is 0% of the exposure in formal crimping process.Comparative example 1 Involved connector sample, conducting resistance was up to the conducting resistance after 3.4 Ω, failtests and also turned into 6.1 Ω at initial stage its. In addition, the alignment bias of the connector sample involved by comparative example 1 is big to 3.1 μm.
[comparative example 2]
In comparative example 2, if the hot pressurized conditions in interim crimping process are 7MPa, 60 DEG C, and without carrying out ultraviolet irradiation. Ultraviolet irradiation amount in the interim crimping process of comparative example 2, is 0% of the exposure in formal crimping process.Comparative example 2 Involved connector sample, its initial stage conducting resistance as little as 1.5 Ω, but the conducting resistance after failtests is up to 5.1 Ω.In addition, the alignment bias of the connector sample involved by comparative example 2 is big to 4.3 μm.
[comparative example 3]
In comparative example 3, if the hot pressurized conditions in interim crimping process are 7MPa, 50 DEG C, ultraviolet irradiation condition is 15mW/ cm2, 1 second.Ultraviolet irradiation amount in the interim crimping process of comparative example 3, is the exposure in formal crimping process 1.5%.Connector sample involved by comparative example 3, its, conducting resistance was the conducting resistance after 2.3 Ω, failtests at initial stage For 5.3 Ω.In addition, the alignment bias of the connector sample involved by comparative example 3 is 1.8 μm.
[comparative example 4]
In comparative example 4, if the hot pressurized conditions in interim crimping process are 60MPa, 80 DEG C, and without the photograph of progress ultraviolet Penetrate.Ultraviolet irradiation amount in the interim crimping process of comparative example 4, is 0% of the exposure in formal crimping process.Compare Connector sample involved by example 4, its initial stage conducting resistance as little as 1.2 Ω, the conducting resistance after failtests is also 4.3 Ω.However, the alignment bias of the connector sample involved by comparative example 4 is big to 6.4 μm.
[comparative example 5]
In comparative example 5, if the hot pressurized conditions in interim crimping process are 60MPa, 80 DEG C, ultraviolet irradiation condition is 2mW/ cm2, 1 second.Ultraviolet irradiation amount in the interim crimping process of comparative example 5, is the exposure in formal crimping process 2%.Connector sample involved by comparative example 5, its initial stage conducting resistance as little as 1.2 Ω, the conducting resistance after failtests Also it is 4.3 Ω.However, the alignment bias of the connector sample involved by comparative example 5 is big to 3.1 μm.
[comparative example 6]
In comparative example 6, if the hot pressurized conditions in interim crimping process are 60MPa, 80 DEG C, ultraviolet irradiation condition is 25mW/cm2, 1 second.Ultraviolet irradiation amount in the interim crimping process of comparative example 6, is the exposure in formal crimping process 25%.Connector sample involved by comparative example 6, its, conducting resistance was up to the electric conduction after 6.3 Ω, failtests at initial stage Resistance is also up to 9.3 Ω.However, the alignment bias of the connector sample involved by comparative example 6 is 0.3 μm.
[comparative example 7]
In comparative example 7, if the hot pressurized conditions in interim crimping process are 60MPa, 80 DEG C, ultraviolet irradiation condition is 10mW/cm2, 0.2 second.Ultraviolet irradiation amount in the interim crimping process of comparative example 7, is the irradiation in formal crimping process The 2% of amount.Connector sample involved by comparative example 7, its initial stage conducting resistance as little as 1.1 Ω, the conducting after failtests Resistance is also 4.5 Ω.However, the alignment bias of the connector sample involved by comparative example 7 is big to 3.1 μm.
[comparative example 8]
In comparative example 8, if the hot pressurized conditions in interim crimping process are 60MPa, 80 DEG C, ultraviolet irradiation condition is 10mW/cm2, 2.5 seconds.Ultraviolet irradiation amount in the interim crimping process of comparative example 8, is the irradiation in formal crimping process The 25% of amount.Connector sample involved by comparative example 8, its, conducting resistance was up to the conducting after 5.2 Ω, failtests at initial stage Resistance is also up to 7.5 Ω.In addition, the alignment bias of the connector sample involved by comparative example 8 is big to 1.2 μm.
[table 1]
As shown in table 1, embodiment 1~6 in interim crimping process using illumination as 3~20mW/cm2, irradiation time be 0.5~2 Second and irradiation ultraviolet radiation.This is 3~20% of the exposure in formal crimping process.Therefore, can be appropriate in embodiment 1~6 Ground carries out the curing reaction of adhesive resin and lifts viscosity, the press-in without hindering electroconductive particle, can use evaluation IC alignment bias is less than 1.0 μm.
Comparative example 1,2 does not have irradiation ultraviolet radiation in interim crimping process, so if being pressed under low-temp low-pressure power Pressure, then being evaluated when when being pressed with thermo-compression bonding tool can become big with IC alignment bias.Further, since with low Pressure is pressed, so the press-in of electroconductive particle is not enough, conducting resistance rises after failtests.
Comparative example 3 has irradiated ultraviolet in interim crimping process with appropriate illumination and time, but evaluates with IC's Pressing force is relatively low, and the press-in of electroconductive particle is not enough, and conducting resistance rises.
Comparative example 4 is pressed when not irradiation ultraviolet radiation carries out interim crimping process with high pressure, will be because of conduction The press-in of property particle and be able to ensure that conduction, but be in alignment with bias and become big.
Comparative example 5 arrives 2mW/cm because the ultraviolet illumination in interim crimping process is low2, so adhesive tree will not be carried out The curing reaction of fat, and because viscosity is relatively low, so being able to ensure that conduction because of the press-in of electroconductive particle, but be in alignment with partially But become from amount big.
Comparative example 6 is up to 25mW/cm due to the ultraviolet illumination in interim crimping process2, alignment can be suppressed and deviateed, separately Simultaneously, the curing reaction of adhesive resin can be excessively carried out, electroconductive particle can not fully be pressed in formal crimping process Enter, conducting resistance rises.
Comparative example 7 is short to 0.2 second due to the ultraviolet irradiation time in interim crimping process, so adhesive will not be carried out The curing reaction of resin, viscosity is relatively low, therefore is able to ensure that because of the press-in of electroconductive particle conduction, but is in alignment with bias But become big.
Comparative example 8 is up to 2.5 seconds due to the ultraviolet irradiation time in interim crimping process, so can suppress alignment It is larger to deviate, but the curing reaction of adhesive resin is excessively carried out, electroconductive particle can not be filled in formal crimping process Divide ground press-in, conducting resistance rises.
As known from the above, by first moderately lifting the viscosity of adhesive resin in interim crimping process, it can suppress The press-in that alignment deviates without hindering electroconductive particle.In addition, the exposure for understanding the light in interim crimping process is preferably The 3~20% of the exposure of light in formal crimping process.
[embodiment 7~9]
It is same to ITO plating glass bonding anisotropic conductive films with the above embodiments 1,2,5 in embodiment 7~9, from each Anisotropy conducting film side is to the entire surface of film with crimping identical condition from anisotropic conductive film side irradiation ultraviolet radiation temporarily （First irradiate）.Configure evaluation IC in anisotropic conductive film after uv irradiation, and with same with embodiment 1,2,5 Condition is crimped temporarily（Light irradiation）.In addition, the first irradiation from anisotropic conductive film side, using with from transparency carrier The roughly the same light source of the light irradiation of side.Moreover, formally being crimped, connector sample has been obtained.The energy in embodiment 7~9 Obtain and the substantially equal result of embodiment 1,2,5.
The embodiment ＞ of ＜ the 2nd
In the present embodiment, make the ultraviolet irradiation condition in interim crimping process different, carry out transparency carrier（Chromium/aluminium plating Apply glass：Evaluate matrix material）With electronic unit（Flexible base board（FPC）：Evaluate element）Connection, obtained connector.And And, for resulting each connector sample, determine the electrode of the flexible base board after connection initial stage and failtests and chromium/ The electrode of aluminium plating glass（Aluminium）Conduction resistance value（Ω）, bond layer after failtests surface and flexible base board The amount in the gap on surface and alignment bias.
In the connection of chromium/aluminium plating glass and flexible base board, as bonding agent, following anisotropic conductive has been used Film.First, using agitating device, by the phenoxy resin of 30 mass parts（YP-70：Nippon Steel ＆ Sumitomo Metal Corporation's system）、 The liquid epoxies of 30 mass parts（EP808：Mitsubishi chemical Co., Ltd's system）, 20 mass parts solid epoxy （YD014：Nippon Steel ＆ Sumitomo Metal Corporation's system）, 3 mass parts electroconductive particle（AUL704：4 μm of mean particle diameter, Sekisui Chemical Co., Ltd's system）, 5 mass parts light cation curing agent（LW-S1：SAN-APRO Co. Ltd. systems）、 With the cationic curing agent of 10 mass parts（SI-60L, three new KCC's systems）Equably mix.By the mixed solution It is coated to the PET film of lift-off processing（50 μm of thickness）On, it is shaped to the membranaceous of 20 μm of thickness.Thus, anisotropy has been obtained to lead Electrolemma.
As flexible base board, 200 μm of P or 50 μm of P have been used（Line/Space=1/1）, 8 μm of t-Sn coating of Cu, 38 μ Mt-S ' perflex matrix materials.
As chromium/aluminium plating glass, aluminium figured plate glass has been used（200 μm of P or 50 μm of P, thickness 1.1mm）.
[embodiment 10]
In the anisotropic conductive film of chromium/aluminium plating glass bonding 1.5mm width, by flexible base in the anisotropic conductive film Plate is aligned.From chromium/aluminium plating glass side of the layered product after contraposition, the LED in 360nm with maximum emission wavelength is used （Controller：ZUV-C20H, head unit：ZUV-H20MB, lens unit：ZUV-212L, OMRON society system）With illumination 40mW/ cm2Carry out 1 second（Exposure：40mJ/cm2）Ultraviolet irradiates.
After uv irradiation, with thermo-compression bonding tool（1.5mm width）Use padded coaming（The teflon that 50 μm of thickness （Registration mark）Piece）, 120 DEG C, 6MPa, under conditions of 5 seconds carry out heating pressing, from being begun to warm up pressing after 3 seconds, profit Above-mentioned LED is used, with illumination 200mW/cm2Carried out 2 seconds from chromium/aluminium plating glass side（Exposure：400mJ/cm2）Ultraviolet Irradiation.
（Initial stage conduction resistance value and failtests after conduction resistance value）
For resulting connector sample, digital multimeter is used（Trade name：Digital multimeter 7561, Yokogawa Motor strain formula Commercial firm's system）, in the method same with the 1st above-mentioned embodiment, determine leading after conduction resistance value at initial stage and failtests Energization resistance.The situation that conduction resistance value at initial stage is less than 3 Ω is evaluated as into " A ", 3 Ω to be evaluated as less than 5 Ω situation " B ", 5 more than Ω situation are evaluated as " C ".In addition, the situation that the conduction resistance value after failtests is less than 5 Ω is evaluated as " A ", 5 Ω are evaluated as " B " less than 10 Ω situation, 10 more than Ω situation is evaluated as " C ".In practicality, conducting resistance The evaluation of value is preferably " A " or " B ".
（Gap after failtests）
For resulting connector sample, determine the solidfied material of anisotropic conductive film at 3 after failtests with it is flexible The gap at the interface of substrate, and calculate its average value.By below the μ of gap 3.5（The 70% of the average grain diameter of electroconductive particle with Under）Situation be evaluated as " A ", more than 3.5 μm and less than 4.5 μm（More than the average grain diameter of electroconductive particle 70% and be less than 90%）Situation be evaluated as " B ", more than 4.5 μm（More than the 90% of the average grain diameter of electroconductive particle）Situation be evaluated as “C”.In practicality, the evaluation in gap is preferably " A " or " B ".
（It is directed at bias）
For resulting connector sample, using stereomicroscope, the terminal 45 and flexible base of chromium/aluminium plating glass are determined The alignment bias of the width of the terminal 46 of plate（Reference picture 12）.Bias will be directed to be evaluated as less than 3 μm of situation " A ", the situation more than 3 μm and less than 5 μm are evaluated as " B ", more than 5 μm of situation and are evaluated as " C ".
The metewand of bias is directed at, such as shown in figure 12, in the terminal 45 contemplated 50 μm of P, connect 600 μm of width It it is about 10000 μm by every 1 connection area connected up in the case of terminal 462Following condition is set to " NG ".That is, it will be aligned Bias is more than 8 μm of situation（（25-8）μm×（600-8）μm=10064 μm2）It is set to " NG ".Moreover, by device Alignment tolerance is assumed to be 3 μm or so, will be aligned bias be less than 5 μm of situation be judged as it is preferred in practicality.Being directed at bias is Just it is more than 5 μm, is also had no problem in practicality, but from the viewpoint of the quality management of connecting structure body, it is more few better.
[embodiment 11]
In embodiment 11, except the condition of the ultraviolet irradiation before formal crimping is changed into illumination 20mW/cm2And 1 second（According to The amount of penetrating：20mJ/cm2）And obtain beyond connector sample, carry out similarly to Example 10.
[embodiment 12]
In embodiment 12, except the condition of the ultraviolet irradiation before formal crimping is changed into illumination 100mW/cm2And 1 second （Exposure：100mJ/cm2）And obtain beyond connector sample, carry out similarly to Example 10.
[comparative example 9]
In comparative example 9, in addition to obtaining connector sample except the ultraviolet before without formal crimping irradiates, with embodiment 10 Similarly carry out.
[comparative example 10]
In comparative example 10, except the condition of the ultraviolet irradiation before formal crimping is changed into illumination 8mW/cm2And 1 second（According to The amount of penetrating：8mJ/cm2）And obtain beyond connector sample, carry out similarly to Example 10.
[comparative example 11]
In comparative example 11, except the condition of the ultraviolet irradiation before formal crimping is changed into illumination 120mW/cm2And 1 second （Exposure：120mJ/cm2）And obtain beyond connector sample, carry out similarly to Example 10.
[embodiment 13]
In embodiment 13, except the flexible base board using 50 μm of P replace 200 μm of P flexible base board and obtain connector sample with Outside, carry out similarly to Example 10.
[embodiment 14]
In embodiment 14, except the condition of the ultraviolet irradiation before formal crimping is changed into illumination 8mW/cm2And 1 second（According to The amount of penetrating：8mJ/cm2）And obtain beyond connector sample, carry out similarly to Example 13.
[embodiment 15]
In embodiment 15, except the condition of the ultraviolet irradiation before formal crimping is changed into illumination 60mW/cm2And 1 second（According to The amount of penetrating：60mJ/cm2）And obtain beyond connector sample, carry out similarly to Example 13.
[comparative example 12]
In comparative example 12, in addition to obtaining connector sample except the ultraviolet before without formal crimping irradiates, with embodiment 13 are similarly carried out.
[comparative example 13]
In comparative example 13, except the condition of the ultraviolet irradiation before formal crimping is changed into illumination 4mW/cm2And 1 second（According to The amount of penetrating：4mJ/cm2）And obtain beyond connector sample, carry out similarly to Example 13.
[comparative example 14]
In comparative example 14, except the condition of the ultraviolet irradiation before formal crimping is changed into illumination 80mW/cm2And 1 second（According to The amount of penetrating：80mJ/cm2）And obtain beyond connector sample, carry out similarly to Example 13.
In following tables, "（1）Before formal crimping " represent in Figure 13（1）Light irradiation before shown formal crimping Condition.In addition, "（2）During formal crimping " represent in Figure 13（2）The condition of light irradiation during shown formal crimping.
[table 2]
Between the minimum wiring of flexible base board in embodiment 10~12 of the distance more than 25 μm, make the photograph of the light in light irradiation process The amount of penetrating is the 5~25% of the exposure of the light in formal crimping process.It follows that conduction resistance value at initial stage, failtests Gap after rear conduction resistance value, failtests and be aligned bias evaluation it is all good.
During distance is less than 25 μm of embodiment 13~15 between the minimum wiring of flexible base board, make in light irradiation process The exposure of light is the 2~15% of the exposure of the light in formal crimping process.It follows that conduction resistance value at initial stage, reliable Property experiment after conduction resistance value, the gap after failtests and be aligned bias evaluation it is all good.
Understood in comparative example 9,12, due to there is no irradiation ultraviolet radiation in light irradiation process, so in formal crimping process In heating pressing when, the alignment of the conduction resistance value after failtests, the gap after failtests and flexible base board is inclined From evaluation and non-good.In addition, in comparative example 10,13 understand, due to the ultraviolet irradiation amount in light irradiation process relative to Ultraviolet irradiation amount in formal crimping process is very few, so after the conduction resistance value and failtests after failtests Gap evaluation and non-good.In addition, understood in comparative example 13, the evaluation that the alignment of flexible base board deviates is also and non-good. It is because when the heating in formal crimping process is pressed, constituting the adhesive resin of anisotropic conductive film to think these results Mobility can excessively become big, the residual of heating tool flexible base board when removing pressure in the state of being bent between the wiring of flexible base board When stress is released, can easily occur the stripping in the interface of anisotropic conductive film and flexible base board.
Understood in comparative example 11,14, because the ultraviolet irradiation amount in light irradiation process is relative in formal crimping process Ultraviolet irradiation amount it is excessive, so after conduction resistance value and failtests after conduction resistance value at initial stage, failtests Gap evaluation and non-good.It is because excessively carrying out constituting the adhesive resin of anisotropic conductive film to think this result Electroconductive particle, can not fully be pressed into by curing reaction in formal crimping process.
[embodiment 16~19]
In embodiment 16~19, to chromium/aluminium plating glass bonding anisotropic conductive in the same manner as embodiment 10,11,13,14 Film, and from anisotropic conductive film side, to the entire surface of anisotropic conductive film with 20mJ/cm2（5% during formal crimping）According to Penetrate（First irradiate）Ultraviolet.First irradiation from the anisotropic conductive film side, has been used and the light from transparent substrate side The roughly the same light source of irradiation.After uv irradiation, align flexible base board in anisotropic conductive film and obtain layered product. For the layered product, to have carried out light irradiation with the same condition of embodiment 10,11,13,14 and formally crimp.In embodiment 16 Obtained in~19 and the roughly equal result of embodiment 10,11,13,14.
[embodiment 20~29]
In embodiment 20~29, to chromium/aluminium plating glass bonding anisotropic conductive film in the same manner as embodiment 10~19, When interim crimping process carries out light irradiation from transparent substrate side, repeat equal in addition to being pressed with 60 DEG C, 1MPa Operation, has carried out formal crimping.The result roughly equal with embodiment 10~19 has been obtained in embodiment 20~29.
Label declaration
1 anisotropic conductive film；2 stripping films；3 adhesive resin layers；4 electroconductive particles；10 LCDs Plate；11st, 12 transparency carrier；13 encapsulants；14 liquid crystal；15 panel display units；16th, 17 transparency electrode；18　 Liquid crystal drive IC；20 COG installation portions；21 flexible base boards；22 FOG installation portions；24 alignment films；25th, 26 polarization Tabula rasa；30 heating press heads；31 ultraviolet radiation devices；42 salient points；43 wirings；44 gaps；45th, 46 terminal.

Claims (19)

1. a kind of manufacture method of connector, has：
By the bonding agent arrangement step of adhesive for circuit connection setting on the transparent substrate containing Photoepolymerizationinitiater initiater；
Via foregoing circuit connecting adhesive, by electronic unit configuration on above-mentioned transparency carrier, connect foregoing circuit Connect the light irradiation process of the light irradiation with bonding agent；And
While above-mentioned electronic unit is pressed above-mentioned transparency carrier, while heated and light irradiation formal crimping work Sequence,
The exposure of light in above-mentioned light irradiation process is less than the exposure of the light in above-mentioned formal crimping process.
2. the manufacture method of connector as claimed in claim 1, wherein,
Between above-mentioned bonding agent arrangement step and above-mentioned light irradiation process, also with from foregoing circuit connecting adhesive side, The first irradiation process of light irradiation is carried out to foregoing circuit connecting adhesive entire surface,
Total light irradiation amount of above-mentioned first irradiation process and above-mentioned light irradiation process, less than the illumination of above-mentioned formal crimping process The amount of penetrating.
3. the manufacture method of connector as claimed in claim 1 or 2, wherein, above-mentioned light irradiation process is from above-mentioned transparency carrier Side carries out light irradiation.
4. the manufacture method of the connector as described in any one of claims 1 to 3, wherein, in above-mentioned light irradiation process, root The exposure of light is changed according to distance between the minimum wiring of above-mentioned electronic unit.
5. the manufacture method of the connector as described in any one of Claims 1 to 4, wherein, relative to above-mentioned formal crimping work The irradiation time of light in crimping time in sequence, above-mentioned light irradiation process is less than 1/5.
6. a kind of manufacture method of connector, has：
By the bonding agent arrangement step of adhesive for circuit connection setting on the transparent substrate containing Photoepolymerizationinitiater initiater；
Via foregoing circuit connecting adhesive, by electronic unit configuration on above-mentioned transparency carrier, above-mentioned electronic unit is carried out Pressing to above-mentioned transparency carrier and the interim crimping process of the light irradiation to foregoing circuit connecting adhesive；And
While above-mentioned electronic unit is pressed above-mentioned transparency carrier, while heated and light irradiation formal crimping work Sequence,
The exposure of light in above-mentioned interim crimping process is less than the exposure of the light in above-mentioned formal crimping process.
7. the manufacture method of connector as claimed in claim 6, wherein,
Between above-mentioned bonding agent arrangement step and above-mentioned interim crimping process, also with from foregoing circuit connecting adhesive Side, the first irradiation process of light irradiation is carried out to foregoing circuit connecting adhesive entire surface,
Total light irradiation amount of above-mentioned first irradiation process and above-mentioned interim crimping process, less than the light of above-mentioned formal crimping process Exposure.
8. the manufacture method of connector as claimed in claims 6 or 7, wherein, above-mentioned interim crimping process is from above-mentioned transparent base Plate side carries out light irradiation.
9. the manufacture method of the connector as described in any one of claim 6~8, wherein, in above-mentioned interim crimping process, The exposure of light is changed according to distance between the minimum wiring of above-mentioned electronic unit.
10. the manufacture method of the connector as described in any one of claim 6~9, wherein, in above-mentioned interim crimping process The exposure of light is the 3~20% of the exposure of the light in above-mentioned formal crimping process.
11. the manufacture method of connector as claimed in claim 10, wherein, the illumination of the light in above-mentioned interim crimping process is 3~20mW/cm2。
12. the manufacture method of the connector as described in claim 10 or 11, wherein, the photograph of the light in above-mentioned interim crimping process The time is penetrated for 0.5~2 second.
13. the manufacture method of the connector as described in any one of claim 6~12, wherein, in above-mentioned interim crimping process The pressing force to above-mentioned electronic unit, be the pressing force to above-mentioned electronic unit in above-mentioned formal crimping process 40~ 90%.
14. the manufacture method of the connector as described in any one of claim 6~13, wherein, above-mentioned interim crimping process with Crimping tool proceeds by light irradiation while abutting to the press surface of above-mentioned electronic unit.
15. the manufacture method of the connector as described in any one of claim 6~13, wherein, configure work from above-mentioned bonding agent Sequence carries out the light irradiation to foregoing circuit connecting adhesive.
16. the manufacture method of the connector as described in any one of claim 6~15, wherein, in above-mentioned interim crimping process Above-mentioned electronic unit crimping temperature, it is equal with the crimping temperature of the above-mentioned electronic unit in above-mentioned formal crimping process.
17. a kind of connection method of electronic unit, has：
By the bonding agent arrangement step of adhesive for circuit connection setting on the transparent substrate containing Photoepolymerizationinitiater initiater；
Via foregoing circuit connecting adhesive, by electronic unit configuration on above-mentioned transparency carrier, connect foregoing circuit Connect the light irradiation process of the light irradiation with bonding agent；And
While above-mentioned electronic unit is pressed above-mentioned transparency carrier, while heated and light irradiation formal crimping work Sequence,
The exposure of light in above-mentioned light irradiation process is less than the exposure of the light in above-mentioned formal crimping process.
18. the connection method of electronic unit as claimed in claim 17, wherein, above-mentioned light irradiation process is via foregoing circuit Connecting adhesive and electronic unit is configured on above-mentioned transparency carrier, and carry out above-mentioned electronic unit to above-mentioned transparency carrier Pressing and the interim crimping process of light irradiation to foregoing circuit connecting adhesive.
19. a kind of connector, is manufactured by the method described in any one of claim 1~16.
CN201680005144.3A 2015-01-20 2016-01-20 Method for manufacturing connected body, method for connecting electronic component, and connected body Active CN107078071B (en)

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