TW201535052A - Anisotropic conductive adhesive, method for producing connector and method for connecting electronic component - Google Patents

Anisotropic conductive adhesive, method for producing connector and method for connecting electronic component Download PDF

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Publication number
TW201535052A
TW201535052A TW104103513A TW104103513A TW201535052A TW 201535052 A TW201535052 A TW 201535052A TW 104103513 A TW104103513 A TW 104103513A TW 104103513 A TW104103513 A TW 104103513A TW 201535052 A TW201535052 A TW 201535052A
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TW
Taiwan
Prior art keywords
light
anisotropic conductive
absorption peak
photopolymerization initiator
conductive adhesive
Prior art date
Application number
TW104103513A
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Chinese (zh)
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TWI673570B (en
Inventor
Keisuke Inase
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Dexerials Corp
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Publication of TW201535052A publication Critical patent/TW201535052A/en
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Publication of TWI673570B publication Critical patent/TWI673570B/en

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    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02Non-macromolecular additives
    • C09J11/06Non-macromolecular additives organic
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00Adhesives based on unspecified macromolecular compounds
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    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J4/00Adhesives based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; adhesives, based on monomers of macromolecular compounds of groups C09J183/00 - C09J183/16
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    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J5/00Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
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    • C09J9/00Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02Electrically-conducting adhesives
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/1345Conductors connecting electrodes to cell terminals
    • G02F1/13452Conductors connecting driver circuitry and terminals of panels
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    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20Conductive material dispersed in non-conductive organic material
    • H01B1/22Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
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    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00Use of organic ingredients
    • C08K5/0008Organic ingredients according to more than one of the "one dot" groups of C08K5/01 - C08K5/59
    • C08K5/005Stabilisers against oxidation, heat, light, ozone
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    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/30Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier
    • C09J2301/314Additional features of adhesives in the form of films or foils characterized by the chemical, physicochemical or physical properties of the adhesive or the carrier the adhesive layer and/or the carrier being conductive
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    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09JADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00Additional features of adhesives in the form of films or foils
    • C09J2301/40Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/416Additional features of adhesives in the form of films or foils characterized by the presence of essential components use of irradiation
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00Materials and properties
    • G02F2202/28Adhesive materials or arrangements
    • HELECTRICITY
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    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54426Marks applied to semiconductor devices or parts for alignment
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Abstract

An electronic component is connected at a low temperature and connection failure of the electronic component is improved by using a photocurable adhesive. An anisotropic conductive adhesive which comprises a binder resin layer supported by a releasing base, and wherein the binder resin layer contains a photopolymerizable compound, a photopolymerization initiator, a light absorbent, and conductive particles. The light absorption peak wavelength of the light absorbent is larger than the light absorption peak wavelength of the photopolymerization initiator by 20 nm or more.

Description

異向性導電接著劑、連接體之製造方法及電子零件之連接方法 Anisotropic conductive adhesive, method of manufacturing connector, and connection method of electronic component

本發明係關於一種含有光聚合性化合物、光聚合起始劑及光吸收劑之異向性導電接著劑、使用其之連接體之製造方法及電子零件之連接方法。本申請案以在日本於2014年3月11日提出申請之日本專利申請編號日本專利特願2014-047585為基礎而主張優先權,該申請藉由參照而引用至本申請案中。 The present invention relates to an anisotropic conductive adhesive containing a photopolymerizable compound, a photopolymerization initiator, and a light absorber, a method for producing a connector using the same, and a method for joining electronic components. The present application claims priority on the basis of Japanese Patent Application No. 2014-047585, the entire disclosure of which is hereby incorporated by reference.

一直以來,作為電視或PC顯示器、智慧型手機、攜帶型遊戲機、數位影音播放器、平板PC、可佩戴式終端或車載用顯示器等各種顯示手段或顯示輸入手段,大量使用有液晶顯示裝置或觸控面板裝置。近年來,於此種顯示裝置或觸控面板裝置中,就微距化、輕量薄型化等觀點而言,採用有將IC晶片直接安裝於基板上之所謂COG(chip on glass,玻璃覆晶),或將形成有各種電路之可撓性基板直接安裝於基板上之所謂FOG(film on glass,玻璃上薄膜)。 As a display device or display input means such as a television or PC display, a smart phone, a portable game machine, a digital video player, a tablet PC, a wearable terminal, or a vehicle display, a large number of liquid crystal display devices or Touch panel device. In recent years, in such a display device or a touch panel device, a so-called COG (chip on glass) in which an IC wafer is directly mounted on a substrate is used from the viewpoints of miniaturization, light weight reduction, and the like. Or a so-called FOG (film on glass) in which a flexible substrate on which various circuits are formed is directly mounted on a substrate.

例如,如圖7所示,採用COG安裝方式之液晶顯示裝置100具有發揮用於液晶顯示的主功能之液晶顯示面板104,該液晶顯示面板104具有由玻璃基板等構成之相互對向的兩片透明基板102、103。並且,液晶 顯示面板104中,該等兩透明基板102、103藉由框狀之密封件105而相互貼合,並且設置有於由兩透明基板102、103及密封件105圍繞成之空間內封入液晶106而成之面板顯示部107。 For example, as shown in FIG. 7, a liquid crystal display device 100 using a COG mounting method has a liquid crystal display panel 104 that functions as a main function for liquid crystal display, and the liquid crystal display panel 104 has two mutually opposing substrates composed of a glass substrate or the like. Transparent substrates 102, 103. And, liquid crystal In the display panel 104, the two transparent substrates 102 and 103 are bonded to each other by a frame-shaped sealing member 105, and are provided with a liquid crystal 106 enclosed in a space surrounded by the two transparent substrates 102 and 103 and the sealing member 105. The panel display unit 107 is formed.

透明基板102、103於相互對向之兩內側表面以相互交叉之方式形成有由ITO(銦錫氧化物)等構成之條狀的一對透明電極108、109。並且,兩透明基板102、103藉由該等兩透明電極108、109之該交叉部位構成作為液晶顯示之最小單位的像素。 The transparent substrates 102 and 103 are formed with a pair of strip-shaped transparent electrodes 108 and 109 made of ITO (Indium Tin Oxide) or the like so as to intersect each other on the inner side surfaces of the transparent substrates 102 and 103. Further, the two transparent substrates 102 and 103 constitute pixels which are the smallest unit of the liquid crystal display by the intersection of the two transparent electrodes 108 and 109.

兩透明基板102、103中,一片透明基板103之平面尺寸形成為大於另一片透明基板102之平面尺寸,於該較大地形成之透明基板103的緣部103a形成有透明電極109之端子部109a。又,於兩透明電極108、109上形成有實施過特定之摩擦處理的配向膜111、112,藉由該配向膜111、112限制液晶分子之初始配向。進而,於兩透明電極108、109之外側配設有一對偏光板118、119,藉由該等兩偏光板118、119限制來自背光源等光源120之透射光的振動方向。 Among the two transparent substrates 102 and 103, the planar size of one transparent substrate 103 is formed larger than the planar size of the other transparent substrate 102, and the terminal portion 109a of the transparent electrode 109 is formed on the edge portion 103a of the largely formed transparent substrate 103. Further, alignment films 111 and 112 subjected to a specific rubbing treatment are formed on the two transparent electrodes 108 and 109, and the alignment films 111 and 112 restrict the initial alignment of the liquid crystal molecules. Further, a pair of polarizing plates 118 and 119 are disposed on the outer sides of the two transparent electrodes 108 and 109, and the two polarizing plates 118 and 119 restrict the vibration direction of the transmitted light from the light source 120 such as a backlight.

於端子部109a上經由異向性導電膜114而熱壓接有液晶驅動用IC115。異向性導電膜114係於熱硬化型之黏合劑樹脂中混入導電性粒子並製成膜狀者,藉由在2個導體間進行加熱壓接而可利用導電粒子獲得導體間之電導通,並利用黏合劑樹脂保持導體間之機械連接。液晶驅動用IC115係藉由選擇性地對像素施加液晶驅動電壓,而使液晶之配向部分地變化而可進行特定液晶顯示。再者,作為構成異向性導電膜114之接著劑,通常使用可靠性最高的熱硬化性之接著劑。 The liquid crystal driving IC 115 is thermocompression-bonded to the terminal portion 109a via the anisotropic conductive film 114. The anisotropic conductive film 114 is obtained by mixing conductive particles into a thermosetting adhesive resin and forming a film. By electrically pressing and bonding the two conductors, electrical conduction between the conductors can be obtained by using the conductive particles. The mechanical connection between the conductors is maintained by the binder resin. The liquid crystal driving IC 115 can perform specific liquid crystal display by selectively applying a liquid crystal driving voltage to the pixels to partially change the alignment of the liquid crystal. Further, as the adhesive constituting the anisotropic conductive film 114, the most reliable thermosetting adhesive is usually used.

於經由此種異向性導電膜114將液晶驅動用IC115連接至端 子部109a之情形時,首先,藉由未圖示之預壓接手段於透明電極109之端子部109a上預壓接異向性導電膜114。繼而,於異向性導電膜114上載置液晶驅動用IC115後,如圖8所示,一面藉由熱壓頭等熱壓接手段121將液晶驅動用IC115與異向性導電膜114一併按壓向端子部109a側,一面使熱壓接手段121發熱。藉由利用該熱壓接手段121進行之發熱,異向性導電膜114產生熱硬化反應,藉此,經由異向性導電膜114將液晶驅動用IC115接著於端子部109a上。 Connecting the liquid crystal driving IC 115 to the end via the anisotropic conductive film 114 In the case of the sub-portion 109a, first, the anisotropic conductive film 114 is pre-compressed on the terminal portion 109a of the transparent electrode 109 by a pre-crimping means (not shown). Then, after the liquid crystal driving IC 115 is placed on the anisotropic conductive film 114, the liquid crystal driving IC 115 and the anisotropic conductive film 114 are pressed together by the thermocompression bonding means 121 such as a thermal head. The thermocompression bonding means 121 is heated to the side of the terminal portion 109a. By the heat generated by the thermocompression bonding apparatus 121, the anisotropic conductive film 114 is thermally hardened, whereby the liquid crystal driving IC 115 is attached to the terminal portion 109a via the anisotropic conductive film 114.

然而,於使用此種異向性導電膜之連接方法中,熱加壓溫度高,對液晶驅動用IC115等電子零件或透明基板103之熱衝擊增大。此外,於連接異向性導電膜後,於溫度降低至常溫時,因與該熱壓接手段121抵接的電子零件與透明基板103之溫度差,有可能於透明基板103之端子部109a產生翹曲。因此,有引起於端子部109a周邊的液晶畫面產生之顯示不均或液晶驅動用IC115之連接不良等不良情況之虞。該傾向伴隨透明基板103之窄邊緣化或玻璃之薄型化而顯著地顯現。 However, in the connection method using such an anisotropic conductive film, the heat-pressing temperature is high, and the thermal shock to the electronic component such as the liquid crystal driving IC 115 or the transparent substrate 103 is increased. Further, after the anisotropic conductive film is connected, when the temperature is lowered to the normal temperature, the temperature difference between the electronic component and the transparent substrate 103 that is in contact with the thermocompression bonding apparatus 121 may be generated in the terminal portion 109a of the transparent substrate 103. Warping. Therefore, there are problems such as display unevenness caused by the liquid crystal screen around the terminal portion 109a or poor connection of the liquid crystal driving IC 115. This tendency is remarkably exhibited by the narrow edge of the transparent substrate 103 or the thinning of the glass.

[專利文獻1]日本特開2008-252098號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2008-252098

因此,業界亦提出使用紫外線硬化型之接著劑代替此種使用熱硬化型之接著劑之異向性導電膜114的連接方法。於使用紫外線硬化型之接著劑的連接方法中,未使用熱壓接手段,於常溫下按壓液晶驅動用IC115等電子零件,並自透明基板103之背面側照射紫外線,藉此使黏合劑樹脂硬化。因此,可防止因電子零件或透明基板之加熱溫度差所引起的透 明基板103或液晶驅動用IC115之翹曲。 Therefore, the industry has also proposed to use an ultraviolet curing type adhesive in place of the connection method of the anisotropic conductive film 114 using a thermosetting type adhesive. In the connection method using an ultraviolet curing type adhesive, the electronic component such as the liquid crystal driving IC 115 is pressed at a normal temperature without using a thermocompression bonding method, and ultraviolet rays are irradiated from the back side of the transparent substrate 103 to harden the adhesive resin. . Therefore, it is possible to prevent the temperature difference caused by the heating temperature difference of the electronic component or the transparent substrate. The warpage of the bright substrate 103 or the liquid crystal driving IC 115.

然而,即便於使用紫外線硬化型之接著劑的連接方法中,亦有如下之虞:若於黏合劑樹脂之黏度高的狀態下進行加壓,則無法充分地壓入導電性粒子,即便連接電阻於連接初期良好,亦會因連接後之經時、環境因素而使導通電阻上升。 However, even in the connection method using the ultraviolet-curing type of the adhesive agent, if the pressure is high in the state where the viscosity of the adhesive resin is high, the conductive particles cannot be sufficiently pressed, even if the resistance is connected. It is good at the beginning of the connection, and the on-resistance is also increased due to the time-lapse and environmental factors after the connection.

本發明係解決上述課題者,其目的在於提供一種藉由使用光硬化型之接著劑而於低溫下進行電子零件之連接,並且改善電子零件之連接不良的異向性導電接著劑、連接體之製造方法及電子零件之連接方法。 The present invention has been made in view of the above problems, and an object of the invention is to provide an anisotropic conductive adhesive or a connector which can be connected to an electronic component at a low temperature by using a photocurable adhesive and improve connection failure of the electronic component. Manufacturing method and connection method of electronic parts.

為了解決上述課題,本發明之異向性導電接著劑含有光聚合性化合物、光聚合起始劑及光吸收劑,上述光吸收劑之光吸收峰波長大於上述光聚合起始劑之光吸收峰波長,且差20nm以上。 In order to solve the above problems, the anisotropic conductive adhesive of the present invention contains a photopolymerizable compound, a photopolymerization initiator, and a light absorber, and the light absorption peak wavelength of the light absorber is larger than the light absorption peak of the photopolymerization initiator. The wavelength is, and the difference is 20 nm or more.

又,本發明之連接體之製造方法在載置於平台上之透明基板上,經由光硬化系異向性導電接著劑而配置電子零件,一面藉由壓接工具將上述電子零件按壓於上述透明基板,一面利用光照射器進行光照射,上述光硬化系異向性導電接著劑含有光聚合性化合物、光聚合起始劑及光吸收劑,上述光吸收劑之光吸收峰波長大於上述光聚合起始劑之光吸收峰波長,且差20nm以上,上述光照射器照射含有上述光聚合起始劑之光吸收峰及上述光吸收劑之光吸收峰的波長之光。 Further, in the method for producing a connector of the present invention, the electronic component is placed on the transparent substrate placed on the stage, and the electronic component is placed on the transparent member via the photo-curing anisotropic conductive adhesive, and the electronic component is pressed against the transparent portion by a pressure bonding tool. The substrate is light-irradiated by a light irradiator, and the photo-curable anisotropic conductive adhesive contains a photopolymerizable compound, a photopolymerization initiator, and a light absorber, and the light absorption peak wavelength of the light absorber is larger than the photopolymerization. The light absorption peak wavelength of the initiator is 20 nm or more, and the light irradiator irradiates light having a wavelength of a light absorption peak of the photopolymerization initiator and a light absorption peak of the light absorber.

又,本發明之電子零件之連接方法在載置於平台上之透明基板上,經由光硬化系異向性導電接著劑而配置電子零件,一面藉由壓接工具將上述電子零件按壓於上述透明基板,一面利用光照射器進行光照射,上述光硬化系異向性導電接著劑含有光聚合性化合物、光聚合起始劑及光 吸收劑,上述光吸收劑之光吸收峰波長大於上述光聚合起始劑之光吸收峰波長,且差20nm以上,上述光照射器係照射含有上述光聚合起始劑之光吸收峰及上述光吸收劑之光吸收峰的波長之光。 Further, in the method of connecting an electronic component according to the present invention, an electronic component is placed on a transparent substrate placed on a stage via a photo-curable anisotropic conductive adhesive, and the electronic component is pressed against the transparent portion by a crimping tool. The substrate is irradiated with light by a light irradiator, and the photocurable anisotropic conductive adhesive contains a photopolymerizable compound, a photopolymerization initiator, and light. In the absorbent, the light absorption peak wavelength of the light absorber is larger than the light absorption peak wavelength of the photopolymerization initiator, and the difference is 20 nm or more, and the light irradiator irradiates the light absorption peak containing the photopolymerization initiator and the light. Light of the wavelength of the absorption peak of the absorber.

根據本發明,作為異向性導電接著劑,使用光吸收劑之光吸收峰波長較光聚合起始劑之光吸收峰波長大20nm以上者作為光聚合起始劑及光吸收劑。藉此,不會相互阻礙光聚合起始劑與光吸收劑之各紫外線吸收,可分別進行黏合劑樹脂之硬化反應的進行及利用發熱之黏合劑樹脂之熔融。因此,可製造具有良好連接性之連接體。 According to the present invention, as the anisotropic conductive adhesive, a light-absorbing peak having a light absorption peak wavelength larger than a light absorption peak wavelength of the photopolymerization initiator of 20 nm or more is used as a photopolymerization initiator and a light absorber. Thereby, the ultraviolet ray absorption of the photopolymerization initiator and the light absorbing agent is not inhibited from each other, and the curing reaction of the binder resin and the melting of the binder resin by heat generation can be performed separately. Therefore, a connector having good connectivity can be manufactured.

1‧‧‧異向性導電膜 1‧‧‧ anisotropic conductive film

2‧‧‧剝離膜 2‧‧‧Release film

3‧‧‧黏合劑樹脂層 3‧‧‧Binder resin layer

4‧‧‧導電性粒子 4‧‧‧Electrical particles

10‧‧‧液晶顯示面板 10‧‧‧LCD panel

11、12‧‧‧透明基板 11, 12‧‧‧ Transparent substrate

13‧‧‧密封件 13‧‧‧Seal

14‧‧‧液晶 14‧‧‧LCD

15‧‧‧面板顯示部 15‧‧‧ Panel display

16、17‧‧‧透明電極 16, 17‧‧ ‧ transparent electrode

18‧‧‧液晶驅動用IC 18‧‧‧LCD driver IC

20‧‧‧COG安裝部 20‧‧‧COG Installation Department

21‧‧‧可撓性基板 21‧‧‧Flexible substrate

22‧‧‧FOG安裝部 22‧‧‧FOG Installation Department

24‧‧‧配向膜 24‧‧‧Alignment film

25、26‧‧‧偏光板 25, 26‧‧‧ polarizing plate

30‧‧‧連接裝置 30‧‧‧Connecting device

31‧‧‧平台 31‧‧‧ platform

33‧‧‧壓接頭 33‧‧‧ crimping joint

35‧‧‧紫外線照射器 35‧‧‧UV illuminator

圖1係作為連接體之一例而揭示的液晶顯示面板之剖面圖。 Fig. 1 is a cross-sectional view showing a liquid crystal display panel as an example of a connector.

圖2係表示液晶驅動用IC與透明基板之連接步驟之剖面圖。 2 is a cross-sectional view showing a step of connecting a liquid crystal driving IC and a transparent substrate.

圖3係表示異向性導電膜之剖面圖。 Fig. 3 is a cross-sectional view showing an anisotropic conductive film.

圖4係表示本發明之異向性導電膜的光聚合起始劑與光吸收劑的光吸收峰波長之關係的曲線圖。 Fig. 4 is a graph showing the relationship between the photopolymerization initiator of the anisotropic conductive film of the present invention and the wavelength of the light absorption peak of the light absorber.

圖5係表示測量實施例及比較例之連接體樣品的翹曲量之步驟的側視圖。 Fig. 5 is a side view showing the steps of measuring the amount of warpage of the sample of the joint of the examples and the comparative examples.

圖6係表示測量實施例及比較例之連接體樣品的連接電阻之步驟的立體圖。 Fig. 6 is a perspective view showing the steps of measuring the connection resistance of the connector samples of the examples and the comparative examples.

圖7係液晶顯示面板之剖面圖。 Figure 7 is a cross-sectional view of a liquid crystal display panel.

圖8係表示於液晶顯示面板之透明基板連接IC晶片的步驟之剖面圖。 Fig. 8 is a cross-sectional view showing a step of connecting an IC wafer to a transparent substrate of a liquid crystal display panel.

以下,對應用本發明之異向性導電接著劑、連接體之製造方法及電子零件之連接方法,一面參照圖式,一面詳細地進行說明。再者,本發明並不僅限定於以下之實施形態,當然可於不脫離本發明之主旨的範圍內進行各種變更。又,圖式係示意性者,存在各尺寸之比率等與現實者不同之情形。具體的尺寸等應參考以下之說明而加以判斷。又,當然於圖式彼此間亦含有相互之尺寸的關係或比率不同之部分。 Hereinafter, the anisotropic conductive adhesive to which the present invention is applied, the method for producing the connector, and the method for connecting the electronic components will be described in detail with reference to the drawings. The present invention is not limited to the embodiments described below, and various modifications may be made without departing from the spirit and scope of the invention. Further, the drawings are schematic, and there are cases where the ratio of each size is different from the actual one. The specific dimensions and the like should be judged by referring to the following description. Further, of course, the drawings also include portions having different sizes or ratios of each other.

以下,以進行於液晶顯示面板之玻璃基板安裝作為電子零件的液晶驅動用IC晶片之所謂COG(chip on glass)安裝的情形為例進行說明。該液晶顯示面板10如圖1所示,對向配置有由玻璃基板等構成之兩片透明基板11、12,且該等透明基板11、12藉由框狀之密封件13而相互貼合。並且,液晶顯示面板10係藉由在由透明基板11、12圍繞成之空間內封入液晶14而形成面板顯示部15。 In the following, a case where a so-called COG (chip on glass) mounting of a liquid crystal driving IC chip as an electronic component is mounted on a glass substrate of a liquid crystal display panel will be described as an example. As shown in FIG. 1, the liquid crystal display panel 10 has two transparent substrates 11 and 12 which are formed of a glass substrate or the like, and the transparent substrates 11 and 12 are bonded to each other by a frame-shaped sealing member 13. Further, in the liquid crystal display panel 10, the panel display portion 15 is formed by enclosing the liquid crystal 14 in a space surrounded by the transparent substrates 11, 12.

透明基板11、12於相互對向之兩內側表面以相互交叉的方式形成有由ITO(銦錫氧化物)等構成之條狀的一對透明電極16、17。並且,兩透明電極16、17藉由該等兩透明電極16、17之該交叉部位而構成作為液晶顯示之最小單位的像素。 A pair of strip-shaped transparent electrodes 16 and 17 made of ITO (indium tin oxide) or the like are formed on the inner surfaces of the transparent substrates 11 and 12 so as to intersect each other. Further, the two transparent electrodes 16 and 17 constitute pixels which are the smallest unit of liquid crystal display by the intersection of the two transparent electrodes 16 and 17.

兩片透明基板11、12中,一片透明基板12之平面尺寸形成為大於另一片透明基板11之平面尺寸,於該較大地形成之透明基板12的緣部12a設置有COG安裝部20,該COG安裝部20安裝有作為電子零件之液晶驅動用IC18,又,於COG安裝部20之外側附近,設置有FOG安裝部22,該FOG安裝部22安裝有作為電子零件之形成有液晶驅動電路的可撓性基板 21。再者,於COG安裝部20形成有透明電極17之端子部17a及與設置於液晶驅動用IC18之IC側對準標記24重疊的基板側對準標記23。 Among the two transparent substrates 11 and 12, the planar size of one transparent substrate 12 is formed larger than the planar size of the other transparent substrate 11, and the COG mounting portion 20 is disposed on the edge portion 12a of the largely formed transparent substrate 12, the COG The mounting unit 20 is provided with a liquid crystal driving IC 18 as an electronic component, and an FOG mounting portion 22 is provided in the vicinity of the outer side of the COG mounting portion 20, and the FOG mounting portion 22 is provided with a liquid crystal driving circuit as an electronic component. Flexible substrate twenty one. Further, the COG mounting portion 20 is formed with a terminal portion 17a of the transparent electrode 17 and a substrate-side alignment mark 23 which is overlapped with the IC-side alignment mark 24 provided on the liquid crystal driving IC 18.

再者,液晶驅動用IC18可藉由選擇性地對像素施加液晶驅動電壓,使液晶之配向部分地變化而進行特定液晶顯示。又,如圖2所示,液晶驅動用IC18形成有經由異向性導電膜1而與透明電極17之端子部17a導通連接的電極端子19。電極端子19例如可較佳地使用銅凸塊或金凸塊,或對銅凸塊實施鍍金者等。 Further, the liquid crystal driving IC 18 can perform specific liquid crystal display by selectively applying a liquid crystal driving voltage to the pixels to partially change the alignment of the liquid crystal. Further, as shown in FIG. 2, the liquid crystal driving IC 18 is formed with an electrode terminal 19 that is electrically connected to the terminal portion 17a of the transparent electrode 17 via the anisotropic conductive film 1. For the electrode terminal 19, for example, a copper bump or a gold bump or a gold bump for a copper bump or the like can be preferably used.

又,液晶驅動用IC18於安裝面18a形成有藉由與基板側對準標記23重疊而進行對透明基板12之對準的IC側對準標記24。再者,由於透明基板12之透明電極17的配線間距或液晶驅動用IC18之電極端子19的微距化不斷發展,因此對液晶驅動用IC18與透明基板12要求高精度之對準調整。 Further, the liquid crystal driving IC 18 is formed with an IC side alignment mark 24 that is aligned with the substrate-side alignment mark 23 to align the transparent substrate 12 on the mounting surface 18a. In addition, since the wiring pitch of the transparent electrode 17 of the transparent substrate 12 or the verticalization of the electrode terminal 19 of the liquid crystal driving IC 18 is progressing, alignment adjustment of the liquid crystal driving IC 18 and the transparent substrate 12 is required with high precision.

於各安裝部20、22形成有透明電極17之端子部17a。於端子部17a,使用異向性導電膜1作為含有光聚合起始劑之電路連接用接著劑而連接液晶驅動用IC18或可撓性基板21。異向性導電膜1含有導電性粒子4,經由導電性粒子4而使液晶驅動用IC18或可撓性基板21之電極與形成於透明基板12的緣部12a之透明電極17的端子部17a電性連接。該異向性導電膜1為紫外線硬化型之接著劑,藉由下述紫外線照射器35照射紫外線,並且藉由壓接頭33進行按壓,藉此流動化而將導電性粒子4於端子部17a與液晶驅動用IC18或可撓性基板21之各電極間壓碎,於導電性粒子4被壓碎之狀態下進行硬化。藉此,異向性導電膜1將透明基板12與液晶驅動用IC18或可撓性基板21電性、機械連接。 The terminal portion 17a of the transparent electrode 17 is formed in each of the mounting portions 20 and 22. In the terminal portion 17a, the liquid crystal driving IC 18 or the flexible substrate 21 is connected by using the anisotropic conductive film 1 as an adhesive for circuit connection containing a photopolymerization initiator. The anisotropic conductive film 1 contains the conductive particles 4, and the electrodes of the liquid crystal driving IC 18 or the flexible substrate 21 and the terminal portion 17a of the transparent electrode 17 formed on the edge portion 12a of the transparent substrate 12 are electrically connected via the conductive particles 4. Sexual connection. The anisotropic conductive film 1 is an ultraviolet curing type adhesive, and is irradiated with ultraviolet rays by the ultraviolet ray illuminator 35 described below, and is pressed by the pressure contact 33 to fluidize the conductive particles 4 at the terminal portion 17a. The liquid crystal driving IC 18 or each of the electrodes of the flexible substrate 21 is crushed and hardened in a state where the conductive particles 4 are crushed. Thereby, the anisotropic conductive film 1 electrically and mechanically connects the transparent substrate 12 to the liquid crystal driving IC 18 or the flexible substrate 21.

又,於兩透明電極16、17上形成有實施過特定之摩擦處理的配向膜24,藉由該配向膜24限制液晶分子之初始配向。進而,於兩片透明基板11、12之外側配設有一對偏光板25、26,藉由該等兩偏光板25、26限制來自背光源等光源(未圖示)之透射光的振動方向。 Further, an alignment film 24 subjected to a specific rubbing treatment is formed on the two transparent electrodes 16 and 17, and the alignment film 24 restricts the initial alignment of the liquid crystal molecules. Further, a pair of polarizing plates 25 and 26 are disposed on the outer sides of the two transparent substrates 11 and 12, and the two polarizing plates 25 and 26 restrict the vibration direction of the transmitted light from a light source (not shown) such as a backlight.

[光硬化系異向性導電膜] [Photohardenable anisotropic conductive film]

於本發明中,可使用光硬化系之異向性導電膜(ACF,Anisotropic Conductive Film)1。異向性導電膜1可為光陽離子系或光自由基系之任一者,可根據目的而進行適當選擇。 In the present invention, a photohardenable Anisotropic Conductive Film (ACF) 1 can be used. The anisotropic conductive film 1 may be either a photocationic system or a photoradical system, and may be appropriately selected depending on the purpose.

如圖3所示,異向性導電膜1於成為基材之剝離膜2上形成有含有導電性粒子4之黏合劑樹脂層(接著劑層)3。如圖2所示,異向性導電膜1藉由使黏合劑樹脂層3介隔存在於液晶顯示面板10之形成於透明基板12的透明電極17之端子部17a與液晶驅動用IC18的電極端子19之間,而連接液晶顯示面板10與液晶驅動用IC18並使其等導通。 As shown in FIG. 3, the anisotropic conductive film 1 is formed with a binder resin layer (adhesive layer) 3 containing the conductive particles 4 on the release film 2 serving as a substrate. As shown in FIG. 2, the anisotropic conductive film 1 is formed by interposing the adhesive resin layer 3 on the terminal portion 17a of the transparent electrode 17 formed on the transparent substrate 12 of the liquid crystal display panel 10 and the electrode terminal of the liquid crystal driving IC 18. Between 19, the liquid crystal display panel 10 and the liquid crystal driving IC 18 are connected and turned on.

作為剝離膜2,可使用異向性導電膜通常使用之例如聚對苯二甲酸乙二酯膜等基材。 As the release film 2, a substrate such as a polyethylene terephthalate film which is generally used for an anisotropic conductive film can be used.

異向性導電膜1於黏合劑樹脂層3中含有膜形成樹脂、光聚合起始劑、光聚合性化合物、光吸收劑及導電性粒子4。異向性導電膜1藉由含有光吸收劑,而於下述液晶驅動用IC18之連接步驟中,光吸收劑因紫外線照射而發熱,使黏合劑樹脂軟化。藉此,異向性導電膜1可藉由壓接頭33而將導電性粒子4在端子部17a與電極端子19之間充分地壓入。關於光吸收劑之發熱溫度,較佳為使黏合劑樹脂軟化至對壓入導電性粒子4而言為足夠之程度,並且對透明基板13或液晶驅動用IC18亦無熱衝擊之影響 的特定溫度,例如80~90℃左右,可根據光吸收劑之材料選擇而進行適當設定。 The anisotropic conductive film 1 contains a film-forming resin, a photopolymerization initiator, a photopolymerizable compound, a light absorber, and conductive particles 4 in the binder resin layer 3. The anisotropic conductive film 1 contains a light absorbing agent, and in the step of connecting the liquid crystal driving IC 18 described below, the light absorbing agent generates heat by ultraviolet irradiation to soften the binder resin. Thereby, the anisotropic conductive film 1 can sufficiently press the conductive particles 4 between the terminal portion 17a and the electrode terminal 19 by the press joint 33. The heat generation temperature of the light absorber is preferably such that the binder resin is softened to a sufficient extent to press the conductive particles 4, and the transparent substrate 13 or the liquid crystal driving IC 18 is not affected by thermal shock. The specific temperature, for example, about 80 to 90 ° C, can be appropriately set depending on the material selection of the light absorbing agent.

[光陽離子系] [Photocation system]

光陽離子系之異向性導電膜1於黏合劑樹脂層3中含有膜形成樹脂、光陽離子聚合起始劑、光陽離子聚合性化合物及光吸收劑。 The photo-cationic anisotropic conductive film 1 contains a film-forming resin, a photocationic polymerization initiator, a photocationic polymerizable compound, and a light absorber in the binder resin layer 3.

作為膜形成樹脂,較佳為平均分子量為10000~80000左右之樹脂。作為膜形成樹脂,可列舉:苯氧基樹脂、環氧樹脂、變性環氧樹脂、胺基甲酸酯樹脂等各種樹脂。其中,就膜形成狀態、連接可靠性等觀點而言,尤佳為苯氧基樹脂。 The film-forming resin is preferably a resin having an average molecular weight of about 10,000 to 80,000. Examples of the film-forming resin include various resins such as a phenoxy resin, an epoxy resin, a denatured epoxy resin, and a urethane resin. Among them, a phenoxy resin is particularly preferable from the viewpoints of film formation state, connection reliability, and the like.

作為光陽離子聚合起始劑,例如可使用錪鹽、鋶鹽、芳香族重氮鹽、鏻鹽、硒鹽(selenonium)等鎓鹽或金屬芳烴錯合物、矽烷醇/鋁錯合物等錯合化合物、安息香甲苯磺酸酯、鄰硝基苄基甲苯磺酸酯等。又,作為形成鹽時之抗衡陰離子,可使用碳酸丙二酯、六氟銻酸鹽、六氟磷酸鹽、四氟硼酸鹽、四(五氟苯基)硼酸鹽等。 As the photocationic polymerization initiator, for example, a phosphonium salt such as a phosphonium salt, a phosphonium salt, an aromatic diazonium salt, a phosphonium salt or a selenonium salt, a metal aromatic hydrocarbon complex, a decyl alcohol/aluminum complex, or the like can be used. Compound, benzoin tosylate, o-nitrobenzyl tosylate, and the like. Further, as the counter anion in forming a salt, propylene carbonate, hexafluoroantimonate, hexafluorophosphate, tetrafluoroborate, tetrakis(pentafluorophenyl)borate or the like can be used.

光陽離子聚合起始劑可僅單獨使用一種,亦可混合兩種以上使用。其中,芳香族鋶鹽由於在300nm以上之波長區域亦具有紫外線吸收特性,硬化性優異,故可較佳地使用。 The photocationic polymerization initiator may be used alone or in combination of two or more. Among them, the aromatic onium salt is preferably used because it has ultraviolet absorption characteristics in a wavelength region of 300 nm or more and is excellent in hardenability.

光陽離子聚合性化合物係具有藉由陽離子種而進行聚合之官能基的化合物,可列舉:環氧化合物、乙烯醚化合物、環狀醚化合物等。 The photocationic polymerizable compound is a compound having a functional group which is polymerized by a cationic species, and examples thereof include an epoxy compound, a vinyl ether compound, and a cyclic ether compound.

作為環氧化合物,係1分子中具有2個以上環氧基之化合物,例如可列舉:由表氯醇與雙酚A或雙酚F等衍生之雙酚型環氧樹脂、或聚環氧丙醚、聚環氧丙酯、芳香族環氧化合物、脂環式環氧化合物、酚 醛清漆型環氧化合物、環氧丙胺系環氧化合物、環氧丙酯系環氧化合物等。 The epoxy compound is a compound having two or more epoxy groups in one molecule, and examples thereof include a bisphenol type epoxy resin derived from epichlorohydrin, bisphenol A or bisphenol F, or a polyepoxy group. Ether, polyglycidyl ester, aromatic epoxy compound, alicyclic epoxy compound, phenol An aldehyde varnish type epoxy compound, a glycidylamine epoxy compound, a glycidyl ester epoxy compound, or the like.

光吸收劑係藉由在液晶驅動用IC18之連接步驟中照射紫外線而發熱,使黏合劑樹脂熔融者。於使用光陽離子聚合起始劑作為光聚合起始劑之情形時,光吸收劑例如可較佳地使用苯并三唑系、三系、二苯甲酮系等之紫外線吸收劑,並根據光陽離子聚合起始劑之吸收峰波長或紫外線照射器35之分光分佈、與黏合劑樹脂之其他成分的相溶性、紫外線吸收能力等而適當選擇。再者,於使用陽離子系聚合起始劑作為光聚合起始劑之情形時,亦可使用光自由基聚合起始劑作為藉由吸收紫外線而發熱之光吸收劑。 The light absorbing agent generates heat by irradiating ultraviolet rays in the connection step of the liquid crystal driving IC 18, and the binder resin is melted. When a photocationic polymerization initiator is used as the photopolymerization initiator, the light absorber may preferably be, for example, a benzotriazole system or a trisole. An ultraviolet absorber such as a benzophenone or the like, which is based on an absorption peak wavelength of a photocationic polymerization initiator, a light distribution of the ultraviolet ray irradiator 35, compatibility with other components of the binder resin, ultraviolet absorbing ability, and the like. Appropriate choice. Further, when a cationic polymerization initiator is used as the photopolymerization initiator, a photoradical polymerization initiator may be used as a light absorber which generates heat by absorbing ultraviolet rays.

[光自由基系] [Photoradical system]

光自由基系之異向性導電膜1於黏合劑樹脂層3中含有膜形成樹脂、光自由基聚合起始劑、光自由基聚合性化合物及光吸收劑。 The photo-radical-based anisotropic conductive film 1 contains a film-forming resin, a photoradical polymerization initiator, a photoradical polymerization compound, and a light absorber in the binder resin layer 3.

作為膜形成樹脂,可使用與光陽離子系相同者。 As the film forming resin, the same as the photocation system can be used.

作為光自由基聚合起始劑,有安息香乙醚、安息香異丙醚等安息香醚、二苯基乙二酮、羥基環己基苯基酮等苯偶醯縮酮、二苯甲酮、苯乙酮等酮類及其衍生物、9-氧硫類、雙咪唑類等,於該等光聚合起始劑中,視需要亦可以任意比添加胺類、硫化合物、磷化合物等增感劑。此時,必須根據所使用之光源的波長或所需之硬化特性等而選擇最佳之光起始劑。 As a photoradical polymerization initiator, there are benzoin ether such as benzoin ethyl ether, benzoin isopropyl ether, benzoin ketal such as diphenylethylenedione or hydroxycyclohexyl phenyl ketone, benzophenone, acetophenone, etc. Ketones and their derivatives, 9-oxosulfur In the photopolymerization initiator, a sensitizer such as an amine, a sulfur compound or a phosphorus compound may be added in any ratio as needed. At this time, it is necessary to select an optimum photoinitiator depending on the wavelength of the light source used or the desired hardening characteristics and the like.

又,作為藉由光照射而產生活性自由基之化合物,可使用有機過氧化物系硬化劑。作為有機過氧化物,可自過氧化二醯基、過氧化二烷基、過氧化二碳酸酯、過氧化酯、過氧化縮酮、過氧化氫、過氧化矽基 等中使用1種或2種以上。 Further, as a compound which generates an active radical by light irradiation, an organic peroxide-based curing agent can be used. As an organic peroxide, it can be derived from didecyl peroxide, dialkyl peroxide, peroxydicarbonate, peroxyester, peroxyketal, hydrogen peroxide, perylene peroxide One type or two or more types are used.

光自由基聚合性化合物係具有藉由活性自由基而進行聚合之官能基的物質,可列舉:丙烯酸酯化合物、甲基丙烯酸酯化合物、順丁烯二醯亞胺化合物等。 The photoradical polymerizable compound is a compound having a functional group which is polymerized by a living radical, and examples thereof include an acrylate compound, a methacrylate compound, and a maleimide compound.

光自由基聚合性化合物可以單體、低聚物任一種狀態使用,亦可併用單體與低聚物。 The photoradical polymerizable compound may be used in any of a monomer or an oligomer, and a monomer and an oligomer may be used in combination.

作為丙烯酸酯化合物、甲基丙烯酸酯化合物,可列舉:環氧丙烯酸酯低聚物、丙烯酸胺基甲酸酯低聚物、聚醚丙烯酸酯低聚物、聚酯丙烯酸酯低聚物等光聚合性低聚物;三羥甲基丙烷三丙烯酸酯、聚乙二醇二丙烯酸酯、聚伸烷基二醇二丙烯酸酯、新戊四醇丙烯酸酯、丙烯酸2-氰基乙酯、丙烯酸環己酯、丙烯酸二環戊烯酯、丙烯酸二環戊烯氧基乙酯、丙烯酸2-(2-乙氧基乙氧基)乙酯、丙烯酸2-乙氧基乙酯、丙烯酸2-乙基己酯、丙烯酸正己酯、丙烯酸2-羥基乙酯、丙烯酸羥基丙酯、丙烯酸異莰酯、丙烯酸異癸酯、丙烯酸異辛酯、丙烯酸正月桂酯、丙烯酸2-甲氧基乙酯、丙烯酸2-苯氧基乙酯、丙烯酸四氫糠酯、新戊二醇二丙烯酸酯、二新戊四醇六丙烯酸酯等光聚合性單官能及多官能丙烯酸酯單體等。該等可使用1種或混合2種以上使用。 Examples of the acrylate compound and the methacrylate compound include photopolymerization of an epoxy acrylate oligomer, an urethane acrylate oligomer, a polyether acrylate oligomer, and a polyester acrylate oligomer. Oligomer; trimethylolpropane triacrylate, polyethylene glycol diacrylate, polyalkylene glycol diacrylate, neopentyl alcohol acrylate, 2-cyanoethyl acrylate, acrylic acid cyclohexane Ester, dicyclopentenyl acrylate, dicyclopentenyloxyethyl acrylate, 2-(2-ethoxyethoxy)ethyl acrylate, 2-ethoxyethyl acrylate, 2-ethyl acrylate Ester, n-hexyl acrylate, 2-hydroxyethyl acrylate, hydroxypropyl acrylate, isodecyl acrylate, isodecyl acrylate, isooctyl acrylate, n-lauryl acrylate, 2-methoxyethyl acrylate, acrylic acid 2- Photopolymerizable monofunctional and polyfunctional acrylate monomers such as phenoxyethyl ester, tetrahydrofurfuryl acrylate, neopentyl glycol diacrylate, and dipentaerythritol hexaacrylate. These may be used alone or in combination of two or more.

光吸收劑例如可較佳地使用苯并三唑系、三系、二苯甲酮系等之紫外線吸收劑,並根據光自由基聚合起始劑之吸收峰波長或紫外線照射器35之分光分佈、與黏合劑樹脂之其他成分的相溶性、紫外線吸收能力等而適當選擇。 As the light absorber, for example, a benzotriazole system or a third can be preferably used. An ultraviolet absorber such as a benzophenone or the like, and an absorption peak wavelength of the photoradical polymerization initiator, a light distribution of the ultraviolet ray irradiator 35, compatibility with other components of the binder resin, ultraviolet absorbing ability, etc. And choose the right one.

此外,黏合劑樹脂亦可含有矽烷偶合劑等添加劑或無機填 料。作為矽烷偶合劑,可列舉:環氧系、胺基系、巰基-硫醚系、脲基系等。藉由添加矽烷偶合劑,有機材料與無機材料之界面的接著性得以提高。 In addition, the binder resin may also contain an additive such as a decane coupling agent or an inorganic filler. material. Examples of the decane coupling agent include an epoxy group, an amine group, a mercapto-thioether system, and a urea group. By adding a decane coupling agent, the adhesion of the interface between the organic material and the inorganic material is improved.

作為導電性粒子4,可列舉異向性導電膜中所使用的公知之任一種導電性粒子。作為導電性粒子4,例如可列舉:鎳、鐵、銅、鋁、錫、鉛、鉻、鈷、銀、金等各種金屬或金屬合金之粒子,於金屬氧化物、碳、石墨、玻璃、陶瓷、塑膠等之粒子的表面塗佈有金屬者,或於該等粒子之表面進而塗佈有絕緣薄膜者等。於在樹脂粒子之表面塗佈有金屬者之情形時,作為樹脂粒子,例如可列舉:環氧樹脂、酚樹脂、丙烯酸樹脂、丙烯腈-苯乙烯(AS)樹脂、苯胍樹脂、二乙烯基苯系樹脂、苯乙烯系樹脂等之粒子。 The conductive particles 4 include any of the known conductive particles used in the anisotropic conductive film. Examples of the conductive particles 4 include particles of various metals such as nickel, iron, copper, aluminum, tin, lead, chromium, cobalt, silver, gold, or metal alloys, and metal oxides, carbon, graphite, glass, and ceramics. The surface of the particles such as plastics is coated with a metal, or the surface of the particles is further coated with an insulating film. When the surface of the resin particle is coated with a metal, examples of the resin particle include an epoxy resin, a phenol resin, an acrylic resin, an acrylonitrile-styrene (AS) resin, and a benzoquinone. Particles such as a resin, a divinylbenzene resin, or a styrene resin.

[光聚合起始劑與光吸收劑之光吸收峰波長] [Light absorption peak wavelength of photopolymerization initiator and light absorber]

關於本發明之光硬化系之異向性導電膜1,光吸收劑之光吸收峰波長大於光聚合起始劑之光吸收峰波長,且差20nm以上。異向性導電膜1若自下述紫外線照射器35被照射紫外光,則光聚合起始劑吸收紫外光而產生酸或自由基。又,光吸收劑亦同樣地吸收紫外光並發熱。 In the photoconductive type anisotropic conductive film 1 of the present invention, the light absorption peak wavelength of the light absorber is larger than the light absorption peak wavelength of the photopolymerization initiator, and the difference is 20 nm or more. When the anisotropic conductive film 1 is irradiated with ultraviolet light from the ultraviolet ray irradiator 35 described below, the photopolymerization initiator absorbs ultraviolet light to generate an acid or a radical. Further, the light absorbing agent similarly absorbs ultraviolet light and generates heat.

此處,若光聚合起始劑之光吸收峰與光吸收劑之光吸收峰接近,則相互阻礙紫外光之吸收,硬化反應或發熱變得不充分。其結果有如下之虞:黏合劑樹脂未熔融,於導電性粒子4之壓入不足之狀態下進行黏合劑樹脂之硬化,又,因連接後之經時變化或環境變化而使導通電阻上升。 When the light absorption peak of the photopolymerization initiator is close to the light absorption peak of the light absorber, the absorption of ultraviolet light is inhibited from each other, and the hardening reaction or heat generation is insufficient. As a result, the adhesive resin is not melted, and the adhesive resin is hardened in a state where the conductive particles 4 are insufficiently pressed, and the on-resistance is increased due to a change with time or an environmental change after the connection.

又,由於光吸收劑及光聚合起始劑之各光吸收峰波長通常具有如圖4所示之分佈,因此若光吸收劑之光吸收峰波長小於光聚合起始劑之光吸收峰波長,則即便差20nm以上,峰以外之吸收波長的重複範圍亦 會擴大,相互阻礙紫外光之吸收,硬化反應或發熱變得不充分。 Further, since the light absorption peak wavelengths of the light absorbing agent and the photopolymerization initiator generally have a distribution as shown in FIG. 4, if the light absorption peak wavelength of the light absorbing agent is smaller than the light absorption peak wavelength of the photopolymerization initiator, Even if the difference is more than 20 nm, the repetition range of the absorption wavelength other than the peak is also It will expand and block the absorption of ultraviolet light, and the hardening reaction or heat generation will become insufficient.

另一方面,藉由使用光吸收劑之光吸收峰波長較光聚合起始劑之光吸收峰波長大20nm以上者作為光吸收劑及光聚合起始劑,可不阻礙光聚合起始劑與光吸收劑之各紫外線吸收,而分別進行黏合劑樹脂之硬化反應的進行,及利用發熱之黏合劑樹脂的熔融。 On the other hand, when the light absorption peak wavelength of the light absorbing agent is 20 nm or more larger than the light absorption peak wavelength of the photopolymerization initiator, the photopolymerization initiator and the light are not hindered as light absorbers and photopolymerization initiators. Each of the ultraviolet rays of the absorbent absorbs, and the curing reaction of the binder resin proceeds, and the melting of the binder resin by heat is performed.

又,較佳本發明之光聚合起始劑的光吸收峰波長為290nm~330nm,光吸收劑之光吸收峰波長為320nm~360nm。 Further, it is preferred that the photopolymerization initiator of the present invention has a light absorption peak wavelength of from 290 nm to 330 nm, and a light absorption peak of the light absorber has a wavelength of from 320 nm to 360 nm.

例如,藉由使用紫外光之吸收峰為310nm的光陽離子聚合起始劑,並使用紫外光之吸收峰為340~360nm的紫外線吸收劑,光陽離子聚合起始劑與紫外線吸收劑不會相互阻礙紫外光之吸收,可促進硬化反應或發熱。 For example, by using a photocationic polymerization initiator having an absorption peak of ultraviolet light of 310 nm and using an ultraviolet absorber having an absorption peak of ultraviolet light of 340 to 360 nm, the photocationic polymerization initiator and the ultraviolet absorber do not hinder each other. Absorption of ultraviolet light can promote hardening reaction or fever.

[連接裝置] [connection device]

繼而,對經由異向性導電膜1將液晶驅動用IC18連接至透明基板12的連接體之製造步驟中所使用之連接裝置30進行說明。 Next, the connection device 30 used in the manufacturing process of the connector in which the liquid crystal driving IC 18 is connected to the transparent substrate 12 via the anisotropic conductive film 1 will be described.

如圖1所示,連接裝置30具有:平台31,其具有光透過性;壓接頭33,其按壓液晶驅動用IC18,該液晶驅動用IC18經由異向性導電膜1而搭載於平台31上載置之透明基板12;及紫外線照射器35,其設置於平台31之背面側。 As shown in FIG. 1, the connection device 30 has a platform 31 having light transmittance, and a crimping joint 33 that presses the liquid crystal driving IC 18 that is mounted on the stage 31 via the anisotropic conductive film 1 The transparent substrate 12 and the ultraviolet illuminator 35 are disposed on the back side of the stage 31.

平台31例如係由石英等具有透光性之材料形成。又,平台31於正面載置透明基板12之緣部12a,並且與壓接頭33相面對,於背面配置有紫外線照射器35。 The stage 31 is formed of, for example, a material having light transmissivity such as quartz. Further, the stage 31 is placed on the front surface of the transparent substrate 12 at the edge portion 12a, and faces the pressure joint 33, and the ultraviolet ray irradiator 35 is disposed on the back surface.

壓接頭33按壓液晶驅動用IC18,該液晶驅動用IC18經由異 向性導電膜1而搭載於透明基板12,藉由被未圖示之頭部移動機構保持,而自由地接近、遠離平台31。 The crimping joint 33 presses the liquid crystal driving IC 18, and the liquid crystal driving IC 18 passes through the different The conductive film 1 is mounted on the transparent substrate 12, and is held by a head moving mechanism (not shown) to be freely moved away from the stage 31.

紫外線照射器35藉由自平台31之背面側對設置於透明基板12之端子部17a的異向性導電膜1照射紫外光,而使光吸收劑發熱,並且於藉由透明電極17之端子部17a與液晶驅動用IC18之電極端子19而夾持導電性粒子4之狀態下使黏合劑樹脂硬化,而將液晶驅動用IC18與透明基板12之端子部17a導通連接。 The ultraviolet ray irradiator 35 irradiates the anisotropic conductive film 1 provided on the terminal portion 17a of the transparent substrate 12 with ultraviolet light from the back side of the stage 31, thereby causing the light absorbing agent to generate heat, and is passed through the terminal portion of the transparent electrode 17. When the conductive particles 4 are sandwiched between the 17a and the electrode terminals 19 of the liquid crystal driving IC 18, the adhesive resin is cured, and the liquid crystal driving IC 18 is electrically connected to the terminal portion 17a of the transparent substrate 12.

紫外線照射器35可使用在光聚合起始劑之吸收峰波長區域具有最大發光波長之紫外線燈。又,紫外線照射器35可使用具有於光聚合起始劑之吸收峰波長區域及光吸收劑之吸收峰波長區域具有波峰之分光分佈的水銀燈,或遍及含有光聚合起始劑及光吸收劑之兩吸收峰波長的波長區域照射紫外線之金屬鹵素燈等。又,紫外線照射器35亦可併用於光聚合起始劑之吸收峰波長區域具有波峰的LED燈與於光吸收劑之吸收峰波長區域具有波峰的LED燈。 The ultraviolet ray irradiator 35 can use an ultraviolet lamp having a maximum emission wavelength in the absorption peak wavelength region of the photopolymerization initiator. Further, the ultraviolet ray irradiator 35 may be a mercury lamp having a spectral distribution of peaks in an absorption peak wavelength region of a photopolymerization initiator and an absorption peak wavelength region of a light absorbing agent, or a photopolymerization initiator and a light absorbing agent. A metal halide lamp or the like that irradiates ultraviolet rays in a wavelength region of two absorption peak wavelengths. Further, the ultraviolet ray irradiator 35 may be used in combination with an LED lamp having a peak in the absorption peak wavelength region of the photopolymerization initiator and an LED lamp having a peak in the absorption peak wavelength region of the light absorbing agent.

[連接步驟] [Connection step]

繼而,對使用上述連接裝置30之液晶驅動用IC18的連接步驟進行說明。首先,將透明基板12載置於暫貼用之平台上,將異向性導電膜1預壓接於透明電極17上。預壓接異向性導電膜1之方法如下:於透明基板12之透明電極17上,以使黏合劑樹脂層3成為透明電極17側之方式,配置異向性導電膜1。 Next, a connection procedure of the liquid crystal driving IC 18 using the above-described connection device 30 will be described. First, the transparent substrate 12 is placed on a temporary mounting platform, and the anisotropic conductive film 1 is pre-compressed on the transparent electrode 17. The method of pre-compression bonding the anisotropic conductive film 1 is as follows: The anisotropic conductive film 1 is disposed on the transparent electrode 17 of the transparent substrate 12 so that the adhesive resin layer 3 becomes the transparent electrode 17 side.

然後,於將黏合劑樹脂層3配置於透明電極17上後,自剝離膜2側藉由暫貼用之熱壓頭對黏合劑樹脂層3進行加熱及加壓,自黏合 劑樹脂層3將剝離膜2剝離,藉此僅將黏合劑樹脂層3暫貼於透明電極17上。利用暫貼用之熱壓頭的預壓接一面以微小之壓力(例如0.1MPa~2MPa左右)將剝離膜2之上表面按壓於透明電極17側,一面進行加熱(例如70~100℃左右)。 Then, after the adhesive resin layer 3 is placed on the transparent electrode 17, the adhesive resin layer 3 is heated and pressurized from the side of the release film 2 by the thermal head for temporary application, and is self-adhesive. The resin layer 3 peels off the release film 2, whereby only the adhesive resin layer 3 is temporarily attached to the transparent electrode 17. Heating the surface of the peeling film 2 against the surface of the transparent electrode 17 with a slight pressure (for example, about 0.1 MPa to 2 MPa) by a pre-compression of the thermal head for temporary application, and heating (for example, about 70 to 100 ° C) .

繼而,以將透明基板12載置於平台31上,經由黏合劑樹脂層3而使透明基板12之透明電極17與液晶驅動用IC18之電極端子19對向的方式,配置液晶驅動用IC18。 Then, the liquid crystal driving IC 18 is placed such that the transparent substrate 12 is placed on the stage 31 and the transparent electrode 17 of the transparent substrate 12 and the electrode terminal 19 of the liquid crystal driving IC 18 are opposed via the adhesive resin layer 3.

繼而,自平台31之背面側藉由紫外線照射器35而照射特定之紫外光,並且藉由壓接頭33,以特定之壓力按壓液晶驅動用IC18之上表面。紫外光透過平台31、透明基板12入射至黏合劑樹脂層3,而被光聚合起始劑及光吸收劑吸收。光聚合起始劑藉由吸收紫外光而產生酸或自由基,藉此進行黏合劑樹脂之硬化反應。又,光吸收劑藉由吸收紫外光而以特定溫度發熱(例如80~90℃),使黏合劑樹脂熔融。 Then, specific ultraviolet light is irradiated from the back side of the stage 31 by the ultraviolet illuminator 35, and the upper surface of the liquid crystal driving IC 18 is pressed with a specific pressure by the press fitting 33. The ultraviolet light is transmitted through the stage 31 and the transparent substrate 12 to the adhesive resin layer 3, and is absorbed by the photopolymerization initiator and the light absorber. The photopolymerization initiator generates an acid or a radical by absorbing ultraviolet light, thereby performing a hardening reaction of the binder resin. Further, the light absorbing agent heats the adhesive resin at a specific temperature by absorbing ultraviolet light (for example, 80 to 90 ° C).

即,於本連接步驟中,藉由光吸收劑之發熱使黏合劑樹脂熔融,並於該狀態下,藉由壓接頭33進行按壓,藉此可使黏合劑樹脂自透明電極17之端子部17a與液晶驅動用IC18之電極端子19之間流出,並且充分地壓入導電性粒子4。並且,於在透明電極17之端子部17a與液晶驅動用IC18之電極端子19之間夾持有導電性粒子4的狀態下使黏合劑樹脂進行硬化。因此,於本連接步驟中,藉由在室溫下按壓液晶驅動用IC18,可一面抑制翹曲之影響或對液晶驅動用IC18等電子零件的熱衝擊之影響,一面製造與液晶驅動用IC18之電導通性及機械連接性良好的連接體。 That is, in the present connection step, the binder resin is melted by the heat generation of the light absorbing agent, and in this state, the pressure is applied by the press fitting 33, whereby the adhesive resin can be made from the terminal portion 17a of the transparent electrode 17. The electrode terminal 19 of the liquid crystal driving IC 18 flows out, and the conductive particles 4 are sufficiently pressed. In addition, the adhesive resin is cured in a state in which the conductive particles 4 are interposed between the terminal portion 17a of the transparent electrode 17 and the electrode terminal 19 of the liquid crystal driving IC 18. Therefore, in the connection step, by pressing the liquid crystal driving IC 18 at room temperature, it is possible to manufacture the liquid crystal driving IC 18 while suppressing the influence of warpage or the thermal shock of electronic components such as the liquid crystal driving IC 18. A connector with good electrical conductivity and mechanical connectivity.

此時,如上所述,異向性導電膜1使用光吸收劑之光吸收峰 波長較光聚合起始劑之光吸收峰波長大20nm以上者作為光聚合起始劑及光吸收劑。藉此,不會相互阻礙光聚合起始劑與光吸收劑之各紫外線吸收,可分別進行黏合劑樹脂之硬化反應的進行,及利用發熱之黏合劑樹脂之熔融。 At this time, as described above, the anisotropic conductive film 1 uses the light absorption peak of the light absorbing agent. The wavelength is larger than the wavelength of the light absorption peak of the photopolymerization initiator by 20 nm or more as a photopolymerization initiator and a light absorber. Thereby, the ultraviolet ray absorption of the photopolymerization initiator and the light absorbing agent is not inhibited from each other, and the curing reaction of the binder resin and the melting of the binder resin by heat generation can be performed separately.

又,光吸收劑之發熱由於相等地傳導至透明基板12與液晶驅動用IC18,故與藉由壓接頭33進行加熱之情形不同,亦不會於透明基板12與液晶驅動用IC18之間產生熱梯度,大幅改善由加熱溫度差所引起之翹曲的產生、伴隨翹曲之顯示不均或電子零件之連接不良等問題。 Further, since the heat of the light absorbing agent is equally transmitted to the transparent substrate 12 and the liquid crystal driving IC 18, unlike the case where the heating is performed by the pressure bonding member 33, heat is not generated between the transparent substrate 12 and the liquid crystal driving IC 18. The gradient greatly improves the occurrence of warpage caused by the difference in heating temperature, uneven display accompanying warpage, or poor connection of electronic parts.

再者,利用紫外線照射器35之照射時間或照度、總照射量,根據黏合劑樹脂之組成或利用壓接頭33之壓力及時間,適當設定謀求由黏合劑樹脂之硬化反應的進行與利用壓接頭33之壓入所產生的連接可靠性、接著強度之提高的條件。 In addition, the irradiation time, the illuminance, and the total irradiation amount of the ultraviolet ray irradiator 35 are appropriately set according to the composition of the binder resin or the pressure and time of the pressure-sensitive adhesive 33, and the curing reaction of the adhesive resin and the pressure-bonding joint are appropriately set. The conditions for the connection reliability and the subsequent strength increase caused by the press-in of 33.

其後,連接裝置30藉由使壓接頭33向平台31之上方移動,而結束液晶驅動用IC18之正式壓接步驟。 Thereafter, the connecting device 30 terminates the final pressure bonding step of the liquid crystal driving IC 18 by moving the pressure joint 33 above the stage 31.

於將液晶驅動用IC18連接至透明基板12之透明電極17上後,以相同之方式進行將可撓性基板21安裝於透明基板12的透明電極17上之所謂FOG(film on glass)安裝。此時亦可藉由同樣地使用異向性導電膜1,吸收來自紫外線照射器35之紫外光,而藉由光吸收劑之發熱進行黏合劑樹脂之熔融及因酸或自由基之產生所引起的硬化反應。 After the liquid crystal driving IC 18 is connected to the transparent electrode 17 of the transparent substrate 12, a so-called FOG (film on glass) mounting in which the flexible substrate 21 is mounted on the transparent electrode 17 of the transparent substrate 12 is performed in the same manner. At this time, the ultraviolet light from the ultraviolet ray irradiator 35 can be absorbed by using the anisotropic conductive film 1 in the same manner, and the melting of the binder resin by the heat generation of the light absorbing agent and the generation of acid or free radicals can be caused. Hardening reaction.

藉此,可製造經由異向性導電膜1而將透明基板12與液晶驅動用IC18或可撓性基板21連接之連接體。再者,該等COG安裝與FOG安裝亦可同時進行。 Thereby, a connector in which the transparent substrate 12 and the liquid crystal driving IC 18 or the flexible substrate 21 are connected via the anisotropic conductive film 1 can be manufactured. Furthermore, such COG installations and FOG installations can also be performed simultaneously.

以上,以直接將液晶驅動用IC安裝於液晶顯示面板之玻璃基板上的COG安裝及直接將可撓性基板安裝於液晶顯示面板之基板上的FOG安裝為例進行了說明,但本技術只要為使用光硬化型之接著劑的連接體之製造步驟,則亦可應用於在透明基板上安裝電子零件以外之各種連接。 The FOG mounting in which the liquid crystal driving IC is directly mounted on the glass substrate of the liquid crystal display panel and the FOG mounting in which the flexible substrate is directly mounted on the substrate of the liquid crystal display panel has been described as an example. However, the present technology is only The manufacturing process of the connector using the photocurable adhesive can also be applied to various connections other than mounting electronic components on a transparent substrate.

[其他] [other]

又,本發明除使用上述紫外線硬化型之導電性接著劑以外,例如亦可使用藉由紅外光等其他波長之光線進行硬化的光硬化型之導電性接著劑。 Further, in the present invention, in addition to the above-mentioned ultraviolet curable conductive adhesive, for example, a photocurable conductive adhesive which is cured by light of other wavelengths such as infrared light may be used.

上述中,對作為導電性之接著劑的具有膜形狀之異向性導電膜1進行了說明,但即便為糊狀亦並無問題。又,黏合劑樹脂層3亦可為如下構成:由不含導電性粒子4之黏合劑樹脂構成的絕緣性接著劑層與由含有導電性粒子4之黏合劑樹脂構成的導電性接著劑層積層而成。於該情形時,較佳於絕緣性接著劑層及導電性接著劑層中,分別含有吸收峰波長錯開之光吸收劑及光聚合起始劑。 In the above description, the anisotropic conductive film 1 having a film shape as an adhesive for conductivity has been described, but there is no problem even if it is a paste. Further, the adhesive resin layer 3 may have a structure in which an insulating adhesive layer made of a binder resin containing no conductive particles 4 and a conductive adhesive layer made of a binder resin containing conductive particles 4 are laminated. Made. In this case, it is preferable that each of the insulating adhesive layer and the conductive adhesive layer contains a light absorbing agent and a photopolymerization initiator which have a shift peak wavelength shifted.

又,本發明亦可用於連接步驟,該連接步驟利用由不含導電性粒子4之黏合劑樹脂層構成的絕緣性接著膜及使用不含導電性粒子4之糊狀的黏合劑樹脂之絕緣性接著膏。本發明之接著劑只要為含有光聚合起始劑及光吸收劑之電路連接用接著劑,則不限制導電性粒子4之有無,或膜或糊等形態。 Further, the present invention can also be applied to a joining step of insulating insulating film composed of a binder resin layer containing no conductive particles 4 and insulating property using a paste-like adhesive resin containing no conductive particles 4. Then paste. The adhesive agent of the present invention is not limited to the presence or absence of the conductive particles 4, or a film or a paste, as long as it is an adhesive for circuit connection containing a photopolymerization initiator and a light absorber.

再者,於本連接步驟中,亦可於平台31設置加熱器等加熱機構,而於由光吸收劑所產生之發熱溫度以下的溫度對透明基板12進行加熱。又,於本連接步驟中,亦可藉由壓接頭33,於由光吸收劑所產生之發熱溫度以下的溫度對液晶驅動用IC18進行加熱。藉此,可與光吸收劑之發 熱相輔相成而使黏合劑樹脂層3充分地熔融,並於端子部17a與電極端子19確實地壓入導電性粒子4,提高連接性。 Further, in the present connection step, a heating means such as a heater may be provided on the stage 31, and the transparent substrate 12 may be heated at a temperature lower than a heat generation temperature generated by the light absorbing agent. Further, in the present connection step, the liquid crystal driving IC 18 may be heated by the pressure contact 33 at a temperature lower than the heat generation temperature generated by the light absorbing agent. Thereby, it can be combined with the light absorber When the heat is mutually complementary, the adhesive resin layer 3 is sufficiently melted, and the conductive particles 4 are reliably pressed into the terminal portion 17a and the electrode terminal 19 to improve the connectivity.

[實施例] [Examples]

繼而,對本技術之實施例進行說明。本實施例對變更異向性導電膜之組成及硬化條件而製造的透明基板與IC晶片之連接體樣品,根據導通電阻值(Ω)及翹曲量對IC晶片與透明基板之連接狀態進行評價。 Next, an embodiment of the present technology will be described. In the present embodiment, the connection sample of the transparent substrate and the IC wafer manufactured by changing the composition and the curing conditions of the anisotropic conductive film is subjected to the connection state of the IC wafer and the transparent substrate in accordance with the on-resistance value (Ω) and the amount of warpage. Evaluation.

作為連接中所使用之接著劑,準備由含有光陽離子聚合起始劑與陽離子聚合性化合物之黏合劑樹脂層構成的異向性導電膜。 As an adhesive agent used for the connection, an anisotropic conductive film composed of a binder resin layer containing a photocationic polymerization initiator and a cationically polymerizable compound is prepared.

使用外形為1.8mm×34mm、厚度0.5mm形成有導通測量用配線之評價用IC作為評價元件。 An evaluation IC having a wiring for conducting measurement was formed using an outer shape of 1.8 mm × 34 mm and a thickness of 0.5 mm as an evaluation element.

使用厚度0.5mm之塗佈有ITO的玻璃作為連接評價用IC之評價基材。 A glass coated with ITO having a thickness of 0.5 mm was used as an evaluation substrate for the connection evaluation IC.

於該玻璃基板經由異向性導電膜而配置評價用IC,藉由壓接工具(10.0mm×40.0mm)進行加壓,並且藉由紫外線照射進行連接,藉此形成連接體樣品。壓接工具於加壓面實施有厚度0.05mm之氟樹脂加工。又,紫外線照射器(SP-9:牛尾電機股份有限公司製造)之照度於365nm為300mW/cm2,於310nm為210mW/cm2,紫外線之照射大小設為寬度約4.0mm×長度約44.0mm。 The evaluation substrate IC was placed on the glass substrate via an anisotropic conductive film, pressurized by a pressure bonding tool (10.0 mm × 40.0 mm), and connected by ultraviolet irradiation to form a connector sample. The crimping tool was processed with a fluororesin having a thickness of 0.05 mm on the pressing surface. Further, ultraviolet irradiator (SP-9: Shelter motor Co., Ltd.) at an illuminance of 365nm is 300mW / cm 2, at 310nm is 210mW / cm 2, irradiating an ultraviolet radiation to a length of about a width of approximately 4.0mm × 44.0mm .

[實施例1] [Example 1]

於實施例1中,作為異向性導電膜之黏合劑樹脂層,製作混合有:苯氧基樹脂(YP-70:新日鐵住金化學股份有限公司製造);20質量份 In the first embodiment, as a binder resin layer of an anisotropic conductive film, a phenoxy resin (YP-70: manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.); 20 parts by mass;

液狀環氧樹脂(EP828:三菱化學股份有限公司製造);30質量份 Liquid epoxy resin (EP828: manufactured by Mitsubishi Chemical Corporation); 30 parts by mass

固態環氧樹脂(YD014:新日鐵住金化學股份有限公司製造);20質量份 Solid epoxy resin (YD014: manufactured by Nippon Steel & Sumitomo Chemical Co., Ltd.); 20 parts by mass

導電性粒子(AUL704:積水化學工業股份有限公司製造);30質量份 Conductive particles (AUL704: manufactured by Sekisui Chemical Co., Ltd.); 30 parts by mass

光陽離子聚合起始劑(SP-170:ADEKA股份有限公司製造);5質量份 Photocationic polymerization initiator (SP-170: manufactured by ADEKA Co., Ltd.); 5 parts by mass

光吸收劑(LA-36:ADEKA股份有限公司製造);5質量份 Light absorber (LA-36: manufactured by ADEKA Co., Ltd.); 5 parts by mass

之樹脂溶液,使用將該樹脂溶液塗佈於PET膜上並使之乾燥,成形為厚度20μm之膜狀者。 The resin solution was applied to a PET film by using the resin solution, and dried to form a film having a thickness of 20 μm.

光陽離子聚合起始劑(SP-170)之吸收峰波長約為310nm,光吸收劑(LA-36)之吸收峰波長約為340nm,其差為30nm。 The photocationic polymerization initiator (SP-170) has an absorption peak wavelength of about 310 nm, and the light absorption agent (LA-36) has an absorption peak wavelength of about 340 nm, and the difference is 30 nm.

壓接工具之按壓條件係於室溫下為70MPa、5秒。紫外線照射器之照射時間為5秒。 The pressing condition of the crimping tool was 70 MPa at room temperature for 5 seconds. The irradiation time of the ultraviolet illuminator was 5 seconds.

[實施例2] [Embodiment 2]

於實施例2中,使用除於黏合劑樹脂層中摻合光吸收劑(LA-31:ADEKA股份有限公司製造)5質量份以外,與實施例1為相同之組成的異向性導電膜。 In the second embodiment, an anisotropic conductive film having the same composition as that of Example 1 except that 5 parts by mass of a light absorber (LA-31: manufactured by ADEKA Co., Ltd.) was blended in the binder resin layer was used.

光陽離子聚合起始劑(SP-170)之吸收峰波長約為310nm,光吸收劑(LA-31)之吸收峰波長為345nm,其差為35nm。 The photocationic polymerization initiator (SP-170) has an absorption peak wavelength of about 310 nm, and the light absorption agent (LA-31) has an absorption peak wavelength of 345 nm, and the difference is 35 nm.

壓接工具之按壓條件及紫外線照射器之照射時間與實施例1相同。 The pressing conditions of the crimping tool and the irradiation time of the ultraviolet irradiator were the same as in the first embodiment.

[實施例3] [Example 3]

於實施例3中,使用除於黏合劑樹脂層中摻合光自由基聚合起始劑(OXE1:BASF公司製造)5質量份作為光吸收劑以外,與實施例1為相同 之組成的異向性導電膜。 In Example 3, the same as Example 1 except that 5 parts by mass of a photoradical polymerization initiator (OXE1: manufactured by BASF Corporation) was blended in the binder resin layer as a light absorber. An anisotropic conductive film composed of.

光陽離子聚合起始劑(SP-170)之吸收峰波長約為310nm,光吸收劑(OXE01)之吸收峰為330nm,其差為20nm。 The photocationic polymerization initiator (SP-170) has an absorption peak wavelength of about 310 nm, and the light absorption agent (OXE01) has an absorption peak of 330 nm, and the difference is 20 nm.

壓接工具之按壓條件及紫外線照射器之照射時間與實施例1相同。 The pressing conditions of the crimping tool and the irradiation time of the ultraviolet irradiator were the same as in the first embodiment.

[比較例1] [Comparative Example 1]

於比較例1中,使用除於黏合劑樹脂層中未摻合光吸收劑以外,與實施例1為相同之組成的異向性導電膜。 In Comparative Example 1, an anisotropic conductive film having the same composition as that of Example 1 except that the light absorber was not blended in the binder resin layer was used.

壓接工具之按壓條件及紫外線照射器之照射時間與實施例1相同。 The pressing conditions of the crimping tool and the irradiation time of the ultraviolet irradiator were the same as in the first embodiment.

[比較例2] [Comparative Example 2]

於比較例2中,使用除於黏合劑樹脂層中摻合光吸收劑(LA-46:ADEKA股份有限公司製造)5質量份以外,與實施例1為相同之組成的異向性導電膜。 In Comparative Example 2, an anisotropic conductive film having the same composition as that of Example 1 except that 5 parts by mass of a light absorber (LA-46: manufactured by ADEKA Co., Ltd.) was blended in the binder resin layer was used.

光陽離子聚合起始劑(SP-170)之吸收峰波長約為310nm,光吸收劑(LA-46)之吸收峰波長約為290nm,光吸收劑之光吸收峰波長小於光聚合起始劑之光吸收峰波長,其差為20nm。 The absorption peak wavelength of the photocationic polymerization initiator (SP-170) is about 310 nm, the absorption peak wavelength of the light absorber (LA-46) is about 290 nm, and the light absorption peak wavelength of the light absorber is smaller than that of the photopolymerization initiator. The wavelength of the light absorption peak was 20 nm.

壓接工具之按壓條件及紫外線照射器之照射時間與實施例1相同。 The pressing conditions of the crimping tool and the irradiation time of the ultraviolet irradiator were the same as in the first embodiment.

[比較例3] [Comparative Example 3]

於比較例3中,將壓接工具之按壓條件設為100℃、70MPa、5秒,除此以外,設為與比較例1相同之條件。 In Comparative Example 3, the same conditions as in Comparative Example 1 were carried out except that the pressing conditions of the crimping tool were set to 100 ° C, 70 MPa, and 5 seconds.

[翹曲之測量] [Measurement of warpage]

翹曲之測量方法使用觸針式表面粗度計(SE-3H:小阪研究所股份有限公司製造),如圖5所示,自接合體樣品之玻璃基板40下表面用觸針41進行掃描,測量評價用IC之連接後的玻璃基板面之翹曲量(μm)。 The measurement method of the warp is performed by using a stylus type surface roughness meter (SE-3H: manufactured by Kosaka Research Institute Co., Ltd.), and the lower surface of the glass substrate 40 of the self-joining body sample is scanned with the stylus 41 as shown in FIG. The amount of warpage (μm) of the glass substrate surface after the connection of the IC for evaluation was measured.

[導通電阻之測量] [Measurement of On-resistance]

對實施例1、2、比較例1~3之連接體,使用數位萬用表,測量連接初期及可靠性試驗後之導通電阻(Ω)。導通電阻值之測量如圖6所示,將數位萬用表連接至與評價用IC之凸塊42連接之塗佈有ITO的玻璃之配線43,而藉由所謂四端子法測量流通電流2mA時之導通電阻值。可靠性試驗之條件設為85℃85%RH500hr。 With respect to the connecting bodies of Examples 1 and 2 and Comparative Examples 1 to 3, the on-resistance (Ω) after the initial connection and the reliability test was measured using a digital multimeter. The measurement of the on-resistance value is as shown in FIG. 6. The digital multimeter is connected to the wiring 43 of the ITO-coated glass connected to the bump 42 of the evaluation IC, and the current of 2 mA is measured by the so-called four-terminal method. On-resistance value. The conditions of the reliability test were set to 85 ° C, 85% RH, 500 hr.

如表1所示,於實施例1~3中,雖為與比較例1同等之翹曲量,但含有光吸收劑之實施例1~3與比較例1相比,初始連接電阻及可靠性試驗後之連接電阻均較低,顯示出良好之連接性。其原因在於,實施 例1~3中於黏合劑樹脂層因光吸收劑之發熱而熔融的狀態下進行按壓,故可藉由排除黏合劑樹脂而充分地壓入導電性粒子,於該狀態下成功使之硬化。另一方面,於比較例1中,係於室溫下進行壓接,故未自電極端子間排除黏合劑樹脂,無法充分地壓入導電性粒子。因此,與實施例1及2相比,於連接初期導通電阻增高,於可靠性試驗後,導通電阻進一步上升。 As shown in Table 1, in Examples 1 to 3, the warpage amount was the same as that of Comparative Example 1, but the initial connection resistance and reliability were compared with Comparative Examples 1 in Examples 1 to 3 containing a light absorber. The connection resistance after the test was low, showing good connectivity. The reason is that implementation In the examples 1 to 3, since the binder resin layer is pressed in a state of being melted by the heat generation of the light absorber, the conductive particles can be sufficiently pressed by removing the binder resin, and the layer can be successfully cured in this state. On the other hand, in Comparative Example 1, since the pressure bonding was performed at room temperature, the binder resin was not removed from the electrode terminals, and the conductive particles could not be sufficiently pressed. Therefore, compared with Examples 1 and 2, the on-resistance was increased at the initial stage of connection, and the on-resistance was further increased after the reliability test.

於比較例2中,光吸收劑與光陽離子聚合起始劑的各吸收峰波長之差為20nm,但由於光吸收劑之光吸收峰波長小於光聚合起始劑之光吸收峰波長,故吸收波長於廣範圍內重疊,利用光陽離子聚合起始劑之紫外光的吸收被光吸收劑所阻礙,硬化反應之進行變得不充分。因此,雖然翹曲量大幅減少,但初始連接電阻高,於可靠性試驗後,導通電阻大幅上升。 In Comparative Example 2, the difference between the absorption peak wavelengths of the light absorbing agent and the photocationic polymerization initiator was 20 nm, but since the light absorption peak wavelength of the light absorbing agent was smaller than the wavelength of the light absorption peak of the photopolymerization initiator, absorption The wavelengths overlap in a wide range, and the absorption of ultraviolet light by the photocationic polymerization initiator is hindered by the light absorber, and the progress of the hardening reaction becomes insufficient. Therefore, although the amount of warpage is greatly reduced, the initial connection resistance is high, and the on-resistance is greatly increased after the reliability test.

於比較例3中,一面藉由壓接工具對評價用IC進行加熱按壓,一面照射紫外線。因此,由壓接工具所產生之熱偏向地傳導至評價用IC,若於壓接工具離開後急遽地冷卻,則評價用IC側之變形大於玻璃基板。並且,於比較例3中,藉由黏合劑樹脂層亦無法完全吸收該變形量之差,翹曲量增大。 In Comparative Example 3, the evaluation IC was heated and pressed by a pressure bonding tool while irradiating ultraviolet rays. Therefore, the heat generated by the crimping tool is transmitted to the evaluation IC in a biased manner, and if the crimping tool is suddenly cooled and then cooled, the deformation on the evaluation IC side is larger than that of the glass substrate. Further, in Comparative Example 3, the difference in the amount of deformation was not completely absorbed by the adhesive resin layer, and the amount of warpage was increased.

另一方面,於實施例1~3中,藉由使光吸收劑吸收紫外線,而使黏合劑樹脂層發熱,故對評價用IC與玻璃基板施加大致相同之熱量。因此,評價用IC與玻璃基板之變形量大致相同,可藉由黏合劑樹脂層吸收變形量之差,故可相對減小翹曲量。 On the other hand, in Examples 1 to 3, since the binder resin layer was heated by absorbing the ultraviolet ray by the light absorbing agent, substantially the same amount of heat was applied to the evaluation IC and the glass substrate. Therefore, the amount of deformation of the evaluation IC and the glass substrate is substantially the same, and the difference in the amount of deformation can be absorbed by the binder resin layer, so that the amount of warpage can be relatively reduced.

若對實施例1與實施例2進行比較,則實施例2相較於實施例1可謀求低電阻化。其原因在於,於實施例2中,光吸收劑之吸光度高, 釋出高於實施例1之反應熱,故更顯著地進行黏合劑樹脂層之熔融。藉此,於實施例2中,導電性粒子容易壓碎,相較於實施例1可謀求低電阻化。 When the first embodiment and the second embodiment are compared, the second embodiment can reduce the resistance as compared with the first embodiment. The reason for this is that in Example 2, the absorbance of the light absorbing agent is high, The heat of reaction higher than that of Example 1 was released, so that the melting of the binder resin layer was more markedly performed. As a result, in the second embodiment, the conductive particles were easily crushed, and the resistance was reduced as compared with the first embodiment.

又,於實施例3中,使用光自由基聚合起始劑作為光吸收劑,但由於其係自由基系之起始劑,故即便開環亦不會導致聚合,而僅產生熱。因此,藉由利用此時之熱使黏合劑樹脂層熔融,可充分地壓入導電性粒子,於該狀態下藉由光硬化劑進行硬化,藉此可進行良好之連接。 Further, in Example 3, a photoradical polymerization initiator was used as the light absorbing agent, but since it is a radical-based initiator, even if it is opened, polymerization does not occur, but only heat is generated. Therefore, by melting the binder resin layer by the heat at this time, the conductive particles can be sufficiently pressed, and in this state, the binder can be cured by the light curing agent, whereby good bonding can be achieved.

Claims (10)

一種光硬化系異向性導電接著劑,含有:光聚合性化合物、光聚合起始劑、及光吸收劑,該光吸收劑之光吸收峰波長大於該光聚合起始劑之光吸收峰波長,且差20nm以上。 A photohardenable anisotropic conductive adhesive comprising: a photopolymerizable compound, a photopolymerization initiator, and a light absorber, wherein a light absorption peak wavelength of the light absorber is greater than a wavelength of a light absorption peak of the photopolymerization initiator And the difference is 20nm or more. 如申請專利範圍第1項之光硬化系異向性導電接著劑,其中,該光吸收劑為紫外線吸收劑或自由基聚合起始劑。 The photohardenable anisotropic conductive adhesive according to the first aspect of the invention, wherein the light absorbing agent is an ultraviolet absorber or a radical polymerization initiator. 如申請專利範圍第1或2項之光硬化系異向性導電接著劑,其中,該光聚合起始劑為光陽離子聚合起始劑。 The photohardenable anisotropic conductive adhesive according to claim 1 or 2, wherein the photopolymerization initiator is a photocationic polymerization initiator. 如申請專利範圍第1或2項之光硬化系異向性導電接著劑,其中,該光聚合起始劑為光自由基聚合起始劑,該光吸收劑為紫外線吸收劑。 The photohardenable anisotropic conductive adhesive according to claim 1 or 2, wherein the photopolymerization initiator is a photoradical polymerization initiator, and the light absorber is an ultraviolet absorber. 如申請專利範圍第1或2項之光硬化系異向性導電接著劑,其中,該光聚合起始劑之光吸收峰波長為290nm~330nm,該光吸收劑之光吸收峰波長為320nm~360nm。 The photohardenable anisotropic conductive adhesive according to claim 1 or 2, wherein the photopolymerization initiator has a light absorption peak wavelength of 290 nm to 330 nm, and the light absorption peak wavelength of the light absorber is 320 nm. 360nm. 如申請專利範圍第1或2項之光硬化系異向性導電接著劑,其係由剝離基材支持,形成為膜狀。 The photocurable anisotropic conductive adhesive according to claim 1 or 2, which is supported by a release substrate and formed into a film shape. 一種連接體之製造方法,在載置於平台上之透明基板上經由光硬化系異向性導電接著劑而配置電子零件,一面藉由壓接工具將該電子零件按壓至該透明基板,一面利用光照射器進行光照射, 該光硬化系異向性導電接著劑含有光聚合性化合物、光聚合起始劑及光吸收劑,該光吸收劑之光吸收峰波長大於該光聚合起始劑之光吸收峰波長,且差20nm以上,該光照射器照射含有該光聚合起始劑之光吸收峰及該光吸收劑之光吸收峰的波長之光。 A method of manufacturing a connector in which an electronic component is placed on a transparent substrate placed on a stage via a photo-curable anisotropic conductive adhesive, and the electronic component is pressed against the transparent substrate by a pressure bonding tool The light illuminator performs light irradiation, The photohardenable anisotropic conductive adhesive contains a photopolymerizable compound, a photopolymerization initiator, and a light absorber. The light absorption peak wavelength of the light absorber is larger than the wavelength of the light absorption peak of the photopolymerization initiator, and is poor. At 20 nm or more, the light irradiator irradiates light having a wavelength of a light absorption peak of the photopolymerization initiator and a light absorption peak of the light absorber. 如申請專利範圍第7項之連接體之製造方法,其於室溫下,一面藉由壓接工具將該電子零件按壓向該透明基板,一面利用光照射器進行光照射。 The method for producing a connector according to claim 7, wherein the electronic component is pressed against the transparent substrate by a pressure bonding tool at a room temperature, and light is irradiated by a light irradiator. 如申請專利範圍第7項之連接體之製造方法,其中該平台及/或該壓接工具於藉由該光吸收劑吸收自該光照射器照射之光而發熱之溫度以下的溫度進行加熱。 The method of manufacturing a connector according to claim 7, wherein the platform and/or the pressure bonding tool is heated at a temperature lower than a temperature at which the light absorbing agent absorbs light emitted from the light illuminator to generate heat. 一種電子零件之連接方法,在載置於平台上之透明基板上經由光硬化系異向性導電接著劑而配置電子零件,一面藉由壓接工具將該電子零件按壓於該透明基板,一面利用光照射器進行光照射者,該光硬化系異向性導電接著劑含有光聚合性化合物、光聚合起始劑及光吸收劑,該光吸收劑之光吸收峰波長大於該光聚合起始劑之光吸收峰波長,且差20nm以上,該光照射器照射含有該光聚合起始劑之光吸收峰及該光吸收劑之光吸收峰的波長之光。 A method of connecting electronic components, wherein an electronic component is placed on a transparent substrate placed on a platform via a photo-curing anisotropic conductive adhesive, and the electronic component is pressed against the transparent substrate by a crimping tool When the light irradiator is irradiated with light, the photohardenable anisotropic conductive adhesive contains a photopolymerizable compound, a photopolymerization initiator, and a light absorber, and the light absorption peak wavelength of the light absorber is larger than the photopolymerization initiator The light absorption peak has a wavelength of 20 nm or more, and the light irradiator irradiates light having a wavelength of a light absorption peak of the photopolymerization initiator and a light absorption peak of the light absorber.
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Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107001865B (en) * 2014-11-12 2020-08-21 迪睿合株式会社 Photocurable anisotropic conductive adhesive, method for producing connected body, and method for connecting electronic component
JP2017097974A (en) * 2015-11-18 2017-06-01 デクセリアルズ株式会社 Anisotropically conductive film, method for connecting electronic component, and method for manufacturing connection structure
JP2017112148A (en) * 2015-12-14 2017-06-22 デクセリアルズ株式会社 Connection method
JP2018065916A (en) * 2016-10-19 2018-04-26 デクセリアルズ株式会社 Method for producing connection body
US10739381B2 (en) * 2017-05-26 2020-08-11 Tektronix, Inc. Component attachment technique using a UV-cure conductive adhesive
JP2020077644A (en) * 2020-01-29 2020-05-21 デクセリアルズ株式会社 Thermosetting anisotropic conductive film, connection method and joined body

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2579685B2 (en) * 1989-06-30 1997-02-05 東洋インキ製造株式会社 Thermal transfer material
JPH0346707A (en) * 1989-07-14 1991-02-28 Sumitomo Bakelite Co Ltd Anisotropic conductive film
JP3298110B2 (en) * 1991-04-03 2002-07-02 セイコーエプソン株式会社 Anisotropic conductive adhesive and bonding method thereof
US5891366A (en) * 1994-05-10 1999-04-06 Robert Bosch Gmbh Anisotropically conducting adhesive, and process for producing an anisotropically conducting adhesive
JPH10340748A (en) * 1997-06-06 1998-12-22 Hitachi Chem Co Ltd Method for connecting circuit electrode
JP3759294B2 (en) * 1997-08-29 2006-03-22 日立化成工業株式会社 Electrode connection method
JP4151101B2 (en) * 1998-02-23 2008-09-17 日立化成工業株式会社 Electrode connecting adhesive, fine electrode connecting structure using the same, and electrode connecting method
JP2000219824A (en) * 1999-01-29 2000-08-08 Toppan Forms Co Ltd Photo-setting silver coating material and sheets coated with the same
WO2000046315A1 (en) * 1999-02-08 2000-08-10 Hitachi Chemical Co., Ltd. Adhesive, electrode-connecting structure, and method of connecting electrodes
JP2002014437A (en) * 2000-06-28 2002-01-18 Konica Corp Heat developable recording material
JP4788038B2 (en) * 2000-12-28 2011-10-05 日立化成工業株式会社 Adhesive composition, circuit terminal connection method using the same, and circuit terminal connection structure
JP2006267964A (en) * 2005-03-25 2006-10-05 Sekisui Chem Co Ltd Sealing agent for liquid crystal display element, vertical conduction material, liquid crystal element, and method for manufacturing liquid crystal display element
JP2007025176A (en) * 2005-07-14 2007-02-01 Fujifilm Holdings Corp Pattern forming material, pattern forming apparatus, and method for forming permanent pattern
JPWO2007023834A1 (en) * 2005-08-23 2009-02-26 株式会社ブリヂストン Adhesive composition
JP5245253B2 (en) * 2007-01-19 2013-07-24 住友ベークライト株式会社 Resin composition, insulating resin sheet with film or metal foil, multilayer printed wiring board, and semiconductor device
JP4978493B2 (en) * 2007-10-05 2012-07-18 日立化成工業株式会社 Circuit connection material, connection structure and manufacturing method thereof
JP2008252098A (en) 2008-03-31 2008-10-16 Hitachi Chem Co Ltd Method of manufacturing circuit board apparatus
JP2011008218A (en) * 2009-05-22 2011-01-13 Chisso Corp Optically anisotropic substance
JP5953131B2 (en) * 2011-06-10 2016-07-20 積水化学工業株式会社 Anisotropic conductive material, connection structure, and manufacturing method of connection structure
JP5935337B2 (en) * 2012-01-16 2016-06-15 日立化成株式会社 Liquid photocurable resin composition, optical member, image display device and method for producing the same
JP6259177B2 (en) * 2012-04-16 2018-01-10 早川ゴム株式会社 Method for bonding anisotropic conductive film
JP6185742B2 (en) * 2013-04-19 2017-08-23 デクセリアルズ株式会社 Anisotropic conductive film, connection method, and joined body

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