KR20160000414A - 주위 산소 가스의 국부적 제어로 반도체 웨이퍼를 레이저 어닐링하는 방법 - Google Patents

주위 산소 가스의 국부적 제어로 반도체 웨이퍼를 레이저 어닐링하는 방법 Download PDF

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Publication number
KR20160000414A
KR20160000414A KR1020150076077A KR20150076077A KR20160000414A KR 20160000414 A KR20160000414 A KR 20160000414A KR 1020150076077 A KR1020150076077 A KR 1020150076077A KR 20150076077 A KR20150076077 A KR 20150076077A KR 20160000414 A KR20160000414 A KR 20160000414A
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KR
South Korea
Prior art keywords
gas
annealing
semiconductor wafer
concentration
chamber
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Application number
KR1020150076077A
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English (en)
Korean (ko)
Inventor
제임스 티. 맥훠터
아서 더블유. 자피로파울루
Original Assignee
울트라테크 인크.
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Application filed by 울트라테크 인크. filed Critical 울트라테크 인크.
Publication of KR20160000414A publication Critical patent/KR20160000414A/ko

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Health & Medical Sciences (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
KR1020150076077A 2014-06-24 2015-05-29 주위 산소 가스의 국부적 제어로 반도체 웨이퍼를 레이저 어닐링하는 방법 KR20160000414A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462016134P 2014-06-24 2014-06-24
US62/016,134 2014-06-24

Publications (1)

Publication Number Publication Date
KR20160000414A true KR20160000414A (ko) 2016-01-04

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KR1020150076077A KR20160000414A (ko) 2014-06-24 2015-05-29 주위 산소 가스의 국부적 제어로 반도체 웨이퍼를 레이저 어닐링하는 방법

Country Status (4)

Country Link
JP (1) JP6185512B2 (zh)
KR (1) KR20160000414A (zh)
CN (1) CN105206518A (zh)
TW (1) TWI559379B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111952223A (zh) * 2020-08-17 2020-11-17 北京中科镭特电子有限公司 一种载物台组件及激光热处理装置

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07245311A (ja) * 1994-03-03 1995-09-19 Sony Corp 加熱装置及び加熱方法並びに半導体装置の製造方法
JPH10172919A (ja) * 1996-12-11 1998-06-26 Sony Corp レーザーアニール方法及び装置
JP3917698B2 (ja) * 1996-12-12 2007-05-23 株式会社半導体エネルギー研究所 レーザーアニール方法およびレーザーアニール装置
JPH1192283A (ja) * 1997-09-18 1999-04-06 Toshiba Corp シリコンウエハ及びその製造方法
US5997963A (en) * 1998-05-05 1999-12-07 Ultratech Stepper, Inc. Microchamber
US6180497B1 (en) * 1998-07-23 2001-01-30 Canon Kabushiki Kaisha Method for producing semiconductor base members
JP2001168029A (ja) * 1999-12-10 2001-06-22 Sony Corp 半導体膜形成方法及び薄膜半導体装置の製造方法
JP4845267B2 (ja) * 2001-01-15 2011-12-28 東芝モバイルディスプレイ株式会社 レーザアニール装置およびレーザアニール方法
JP2002252181A (ja) * 2001-02-22 2002-09-06 Sanyo Electric Co Ltd 多結晶半導体層の製造方法及びレーザアニール装置
JP4439789B2 (ja) * 2001-04-20 2010-03-24 株式会社半導体エネルギー研究所 レーザ照射装置、並びに半導体装置の作製方法
US7253032B2 (en) * 2001-04-20 2007-08-07 Semiconductor Energy Laboratory Co., Ltd. Method of flattening a crystallized semiconductor film surface by using a plate
JP4285184B2 (ja) * 2003-10-14 2009-06-24 東京エレクトロン株式会社 成膜方法及び成膜装置
JP4453693B2 (ja) * 2005-11-14 2010-04-21 セイコーエプソン株式会社 半導体装置の製造方法及び電子機器の製造方法
US7732353B2 (en) * 2007-04-18 2010-06-08 Ultratech, Inc. Methods of forming a denuded zone in a semiconductor wafer using rapid laser annealing
JP2009099917A (ja) * 2007-10-19 2009-05-07 Ulvac Japan Ltd レーザーアニール装置
SG195515A1 (en) * 2012-06-11 2013-12-30 Ultratech Inc Laser annealing systems and methods with ultra-short dwell times
US9029809B2 (en) * 2012-11-30 2015-05-12 Ultratech, Inc. Movable microchamber system with gas curtain

Also Published As

Publication number Publication date
JP2016076686A (ja) 2016-05-12
JP6185512B2 (ja) 2017-08-23
TWI559379B (zh) 2016-11-21
TW201601201A (zh) 2016-01-01
CN105206518A (zh) 2015-12-30

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