KR20150066547A - 전류 전환 트랜지스터 - Google Patents

전류 전환 트랜지스터 Download PDF

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Publication number
KR20150066547A
KR20150066547A KR1020157010907A KR20157010907A KR20150066547A KR 20150066547 A KR20150066547 A KR 20150066547A KR 1020157010907 A KR1020157010907 A KR 1020157010907A KR 20157010907 A KR20157010907 A KR 20157010907A KR 20150066547 A KR20150066547 A KR 20150066547A
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KR
South Korea
Prior art keywords
semiconductor material
terminal
terminals
current
electronic device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020157010907A
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English (en)
Korean (ko)
Inventor
데이비드 토마스 브리튼
마지트 하팅
스탠리 더글러스 월턴
Original Assignee
피에스티 센서스 (프로프리에터리) 리미티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 피에스티 센서스 (프로프리에터리) 리미티드 filed Critical 피에스티 센서스 (프로프리에터리) 리미티드
Publication of KR20150066547A publication Critical patent/KR20150066547A/ko
Ceased legal-status Critical Current

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    • H01L29/72—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
    • H01L51/0504—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/34—Bipolar devices
    • H10D48/341—Unijunction transistors, i.e. double base diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N97/00—Electric solid-state thin-film or thick-film devices, not otherwise provided for
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01C—RESISTORS
    • H01C7/00—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material
    • H01C7/10—Non-adjustable resistors formed as one or more layers or coatings; Non-adjustable resistors made from powdered conducting material or powdered semi-conducting material with or without insulating material voltage responsive, i.e. varistors
    • H01C7/1013—Thin film varistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
    • H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Thin Film Transistor (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
KR1020157010907A 2012-09-25 2013-09-20 전류 전환 트랜지스터 Ceased KR20150066547A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
ZA201207163 2012-09-25
ZA2012/07163 2012-09-25
PCT/IB2013/058692 WO2014049500A1 (en) 2012-09-25 2013-09-20 Current switching transistor

Publications (1)

Publication Number Publication Date
KR20150066547A true KR20150066547A (ko) 2015-06-16

Family

ID=50387078

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020157010907A Ceased KR20150066547A (ko) 2012-09-25 2013-09-20 전류 전환 트랜지스터

Country Status (7)

Country Link
US (1) US9601604B2 (https=)
EP (1) EP2901492A4 (https=)
JP (1) JP2016500914A (https=)
KR (1) KR20150066547A (https=)
CN (1) CN104662670B (https=)
WO (1) WO2014049500A1 (https=)
ZA (1) ZA201502852B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9431205B1 (en) 2015-04-13 2016-08-30 International Business Machines Corporation Fold over emitter and collector field emission transistor
USD848384S1 (en) * 2017-08-17 2019-05-14 Epistar Corporation Transistor

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA272437A (en) 1925-10-22 1927-07-19 Edgar Lilienfeld Julius Electric current control mechanism
US2524033A (en) 1948-02-26 1950-10-03 Bell Telephone Labor Inc Three-electrode circuit element utilizing semiconductive materials
US2524035A (en) 1948-02-26 1950-10-03 Bell Telphone Lab Inc Three-electrode circuit element utilizing semiconductive materials
US2569347A (en) 1948-06-26 1951-09-25 Bell Telephone Labor Inc Circuit element utilizing semiconductive material
FR2241875B1 (https=) * 1973-08-21 1977-09-09 Radiotechnique Compelec
DE3004736C2 (de) * 1979-02-09 1986-08-21 TDK Corporation, Tokio/Tokyo Varistor und Verfahren zu seiner Herstellung
JPS5816602B2 (ja) * 1979-02-09 1983-04-01 ティーディーケイ株式会社 電圧非直線性抵抗素子
JPS5735303A (en) * 1980-07-30 1982-02-25 Taiyo Yuden Kk Voltage vs current characteristic nonlinear semiconductor porcelain composition and method of producing same
JPH01146305A (ja) * 1987-12-03 1989-06-08 Nec Corp 金属酸化物バリスタ
JP2712046B2 (ja) * 1989-10-18 1998-02-10 宇部興産株式会社 液晶表示装置
JP2556151B2 (ja) * 1989-11-21 1996-11-20 株式会社村田製作所 積層型バリスタ
JPH05275958A (ja) * 1992-03-25 1993-10-22 Murata Mfg Co Ltd ノイズフィルタ
JP2001023805A (ja) * 1999-07-09 2001-01-26 Matsushita Electric Ind Co Ltd バリスタの製造方法
DE10059498A1 (de) 2000-11-30 2002-06-13 Infineon Technologies Ag Substrat mit einer halbleitenden Schicht, elektronisches Bauelement mit diesem Substrat, elektronische Schaltung mit mindestens einem solchen elektronischen Bauelement, druckbare Zusammensetzung sowie Verfahren zur Herstellung eines Substrats
ZA200506095B (en) 2003-01-30 2006-10-25 Univ Cape Town A thin film semiconductor device and method of manufacturing a thin film semiconductor device
JP2005340301A (ja) * 2004-05-24 2005-12-08 Tdk Corp 電圧依存性非直線抵抗体
KR20060103864A (ko) * 2005-03-28 2006-10-04 타이코 일렉트로닉스 코포레이션 Ｐｐｔｃ 층들 사이에 능동 소자를 갖는 표면 장착식 다층전기 회로 보호 장치
JP4487963B2 (ja) * 2006-03-27 2010-06-23 Ｔｄｋ株式会社 バリスタ及び発光装置
WO2008010437A1 (en) * 2006-07-20 2008-01-24 Otowa Electric Co., Ltd. Lead line extracting type spd and spd manufacturing method
US8203421B2 (en) * 2008-04-14 2012-06-19 Shocking Technologies, Inc. Substrate device or package using embedded layer of voltage switchable dielectric material in a vertical switching configuration
US20100159259A1 (en) * 2008-12-19 2010-06-24 Lex Kosowsky Voltage switchable dielectric material incorporating p and n type material
US8968606B2 (en) * 2009-03-26 2015-03-03 Littelfuse, Inc. Components having voltage switchable dielectric materials
US20110132645A1 (en) * 2009-12-04 2011-06-09 Ning Shi Granular varistor and applications for use thereof
JP5543190B2 (ja) * 2009-12-17 2014-07-09 株式会社日本自動車部品総合研究所 回転検出装置
US9320135B2 (en) * 2010-02-26 2016-04-19 Littelfuse, Inc. Electric discharge protection for surface mounted and embedded components

Also Published As

Publication number Publication date
US9601604B2 (en) 2017-03-21
CN104662670A (zh) 2015-05-27
US20150236140A1 (en) 2015-08-20
EP2901492A4 (en) 2016-06-22
ZA201502852B (en) 2016-11-30
JP2016500914A (ja) 2016-01-14
CN104662670B (zh) 2019-03-12
WO2014049500A1 (en) 2014-04-03
EP2901492A1 (en) 2015-08-05

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