KR20140130434A - 은계 원통 타깃 및 그 제조 방법 - Google Patents

은계 원통 타깃 및 그 제조 방법 Download PDF

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Publication number
KR20140130434A
KR20140130434A KR1020147021670A KR20147021670A KR20140130434A KR 20140130434 A KR20140130434 A KR 20140130434A KR 1020147021670 A KR1020147021670 A KR 1020147021670A KR 20147021670 A KR20147021670 A KR 20147021670A KR 20140130434 A KR20140130434 A KR 20140130434A
Authority
KR
South Korea
Prior art keywords
silver
target
cylindrical target
diameter
central axis
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020147021670A
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English (en)
Korean (ko)
Inventor
쇼조 고미야마
Original Assignee
미쓰비시 마테리알 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 미쓰비시 마테리알 가부시키가이샤 filed Critical 미쓰비시 마테리알 가부시키가이샤
Publication of KR20140130434A publication Critical patent/KR20140130434A/ko
Ceased legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES, PROFILES OR LIKE SEMI-MANUFACTURED PRODUCTS OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C23/00—Extruding metal; Impact extrusion
    • B21C23/002—Extruding materials of special alloys so far as the composition of the alloy requires or permits special extruding methods of sequences
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/06—Alloys based on silver
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3423—Shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Thermal Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Vapour Deposition (AREA)
  • Electroluminescent Light Sources (AREA)
  • Extrusion Of Metal (AREA)
  • Metal Extraction Processes (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
KR1020147021670A 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법 Ceased KR20140130434A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2012071328A JP5472353B2 (ja) 2012-03-27 2012-03-27 銀系円筒ターゲット及びその製造方法
JPJP-P-2012-071328 2012-03-27
PCT/JP2012/079485 WO2013145424A1 (ja) 2012-03-27 2012-11-14 銀系円筒ターゲット及びその製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
KR1020147004114A Division KR101467152B1 (ko) 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020167003213A Division KR20160022934A (ko) 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법

Publications (1)

Publication Number Publication Date
KR20140130434A true KR20140130434A (ko) 2014-11-10

Family

ID=49258759

Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020147021670A Ceased KR20140130434A (ko) 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법
KR1020167003213A Ceased KR20160022934A (ko) 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법
KR1020147004114A Expired - Fee Related KR101467152B1 (ko) 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020167003213A Ceased KR20160022934A (ko) 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법
KR1020147004114A Expired - Fee Related KR101467152B1 (ko) 2012-03-27 2012-11-14 은계 원통 타깃 및 그 제조 방법

Country Status (8)

Country Link
US (1) US20150041313A1 (enExample)
EP (1) EP2832895B1 (enExample)
JP (1) JP5472353B2 (enExample)
KR (3) KR20140130434A (enExample)
CN (1) CN104246002B (enExample)
SG (1) SG11201406054TA (enExample)
TW (1) TWI457450B (enExample)
WO (1) WO2013145424A1 (enExample)

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JP5159962B1 (ja) * 2012-01-10 2013-03-13 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
DE102012006718B3 (de) 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben
JP6198177B2 (ja) * 2013-07-19 2017-09-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
DE102014214683A1 (de) * 2014-07-25 2016-01-28 Heraeus Deutschland GmbH & Co. KG Sputtertarget auf der Basis einer Silberlegierung
JP6350223B2 (ja) * 2014-11-04 2018-07-04 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット
JP5975186B1 (ja) 2015-02-27 2016-08-23 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット及びＡｇ合金膜の製造方法
JP6259847B2 (ja) * 2016-02-05 2018-01-10 住友化学株式会社 円筒型ターゲットの製造方法
WO2017158928A1 (ja) * 2016-03-14 2017-09-21 Ｊｘ金属株式会社 酸化物焼結体
JP7077225B2 (ja) 2016-06-02 2022-05-30 田中貴金属工業株式会社 金スパッタリングターゲット
JP6877179B2 (ja) * 2017-02-23 2021-05-26 Ｎｊｔ銅管株式会社 円筒型スパッタリングターゲット材及びその製造方法
JP7274816B2 (ja) 2017-12-06 2023-05-17 田中貴金属工業株式会社 金スパッタリングターゲットとその製造方法
EP3722454A4 (en) 2017-12-06 2021-04-14 Tanaka Kikinzoku Kogyo K.K. GOLD SPRAY TARGET PRODUCTION PROCESS AND GOLD FILM PRODUCTION PROCESS
JP2019131850A (ja) * 2018-01-30 2019-08-08 三菱マテリアル株式会社 積層膜、及び、Ａｇ合金スパッタリングターゲット
TWI787546B (zh) * 2018-09-26 2022-12-21 日商Ｊｘ金屬股份有限公司 濺鍍靶及其製造方法
CN111215839A (zh) * 2018-11-23 2020-06-02 宁波江丰电子材料股份有限公司 镀膜材料的成型方法
CN109440073A (zh) * 2018-11-29 2019-03-08 信利光电股份有限公司 一种银合金靶材、银合金镀层和电致变色后视镜
JP2020125533A (ja) * 2019-02-06 2020-08-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金膜
JP6853458B2 (ja) * 2019-02-06 2021-03-31 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金膜
JP2021075762A (ja) * 2019-11-08 2021-05-20 三菱マテリアル株式会社 Ａｇ合金スパッタリングターゲット、及び、Ａｇ合金膜
JP7225170B2 (ja) * 2020-08-05 2023-02-20 松田産業株式会社 Ａｇ合金円筒形スパッタリングターゲット、スパッタリング装置及び電子デバイスの製造方法
CN113088749A (zh) * 2021-03-11 2021-07-09 先导薄膜材料（广东）有限公司 一种银合金及其制备方法
CN116752104A (zh) * 2023-06-16 2023-09-15 基迈克材料科技（苏州）有限公司 一种半导体用的高纯低氧细晶Ag旋转管靶的制作方法
CN117102272B (zh) * 2023-09-11 2025-02-11 丰联科光电(洛阳)股份有限公司 一种银合金管靶的制造方法
EP4610391A1 (en) * 2024-03-01 2025-09-03 Materion Advanced Materials Germany GmbH Ag alloy sputtering target with low oxygen content

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JP4384453B2 (ja) * 2003-07-16 2009-12-16 株式会社神戸製鋼所 Ａｇ系スパッタリングターゲット及びその製造方法
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US20070251819A1 (en) * 2006-05-01 2007-11-01 Kardokus Janine K Hollow cathode magnetron sputtering targets and methods of forming hollow cathode magnetron sputtering targets
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JP4793502B2 (ja) * 2009-10-06 2011-10-12 三菱マテリアル株式会社 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
JP5533545B2 (ja) 2010-01-12 2014-06-25 三菱マテリアル株式会社 有機ｅｌ素子の反射電極膜形成用銀合金ターゲットおよびその製造方法
JP5159963B1 (ja) * 2012-01-13 2013-03-13 三菱マテリアル株式会社 導電性膜形成用銀合金スパッタリングターゲットおよびその製造方法
DE102012006718B3 (de) * 2012-04-04 2013-07-18 Heraeus Materials Technology Gmbh & Co. Kg Planares oder rohrförmiges Sputtertarget sowie Verfahren zur Herstellung desselben

Also Published As

Publication number Publication date
EP2832895A4 (en) 2016-04-13
JP5472353B2 (ja) 2014-04-16
EP2832895A1 (en) 2015-02-04
KR20140029549A (ko) 2014-03-10
TWI457450B (zh) 2014-10-21
JP2013204052A (ja) 2013-10-07
WO2013145424A1 (ja) 2013-10-03
SG11201406054TA (en) 2014-11-27
CN104246002A (zh) 2014-12-24
CN104246002B (zh) 2015-11-25
TW201339327A (zh) 2013-10-01
US20150041313A1 (en) 2015-02-12
KR20160022934A (ko) 2016-03-02
EP2832895B1 (en) 2019-08-21
KR101467152B1 (ko) 2014-11-28

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R18-X000 Changes to party contact information recorded

St.27 status event code: A-3-3-R10-R18-oth-X000

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000