KR20140128975A - 그래핀 그리드를 갖는 전자적 디바이스 - Google Patents

그래핀 그리드를 갖는 전자적 디바이스 Download PDF

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Publication number
KR20140128975A
KR20140128975A KR1020147021314A KR20147021314A KR20140128975A KR 20140128975 A KR20140128975 A KR 20140128975A KR 1020147021314 A KR1020147021314 A KR 1020147021314A KR 20147021314 A KR20147021314 A KR 20147021314A KR 20140128975 A KR20140128975 A KR 20140128975A
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KR
South Korea
Prior art keywords
grid
electrode
anode
cathode
graphene
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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KR1020147021314A
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English (en)
Korean (ko)
Inventor
로데릭 에이. 하이드
조딘 티. 카레
나단 피. 미르볼드
토니 에스. 판
제이알. 로웰 엘. 우드
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엘화 엘엘씨
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US13/374,545 external-priority patent/US8575842B2/en
Priority claimed from US13/545,504 external-priority patent/US9018861B2/en
Priority claimed from US13/587,762 external-priority patent/US8692226B2/en
Priority claimed from US13/612,129 external-priority patent/US9646798B2/en
Priority claimed from US13/666,759 external-priority patent/US8946992B2/en
Application filed by 엘화 엘엘씨 filed Critical 엘화 엘엘씨
Publication of KR20140128975A publication Critical patent/KR20140128975A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/46—Control electrodes, e.g. grid; Auxiliary electrodes
    • H01J1/48—Control electrodes, e.g. grid; Auxiliary electrodes characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/28—Non-electron-emitting electrodes; Screens
    • H01J19/38—Control electrodes, e.g. grid
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J21/00—Vacuum tubes
    • H01J21/02—Tubes with a single discharge path
    • H01J21/06—Tubes with a single discharge path having electrostatic control means only
    • H01J21/10—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode
    • H01J21/105—Tubes with a single discharge path having electrostatic control means only with one or more immovable internal control electrodes, e.g. triode, pentode, octode with microengineered cathode and control electrodes, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J3/00—Details of electron-optical or ion-optical arrangements common to two or more basic types of discharge tubes or lamps
    • H01J3/02—Electron guns
    • H01J3/021—Electron guns using a field emission, photo emission, or secondary emission electron source
    • H01J3/022—Electron guns using a field emission, photo emission, or secondary emission electron source with microengineered cathode, e.g. Spindt-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J45/00—Discharge tubes functioning as thermionic generators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites

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  • Cold Cathode And The Manufacture (AREA)
  • Hybrid Cells (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Thin Film Transistor (AREA)
  • Ignition Installations For Internal Combustion Engines (AREA)
KR1020147021314A 2011-12-29 2012-12-27 그래핀 그리드를 갖는 전자적 디바이스 Withdrawn KR20140128975A (ko)

Applications Claiming Priority (15)

Application Number Priority Date Filing Date Title
US201161631270P 2011-12-29 2011-12-29
US61/631,270 2011-12-29
US13/374,545 US8575842B2 (en) 2011-12-29 2011-12-30 Field emission device
US13/374,545 2011-12-30
US201261638986P 2012-04-26 2012-04-26
US61/638,986 2012-04-26
US13/545,504 2012-07-10
US13/545,504 US9018861B2 (en) 2011-12-29 2012-07-10 Performance optimization of a field emission device
US13/587,762 2012-08-16
US13/587,762 US8692226B2 (en) 2011-12-29 2012-08-16 Materials and configurations of a field emission device
US13/612,129 US9646798B2 (en) 2011-12-29 2012-09-12 Electronic device graphene grid
US13/612,129 2012-09-12
US13/666,759 2012-11-01
US13/666,759 US8946992B2 (en) 2011-12-29 2012-11-01 Anode with suppressor grid
PCT/US2012/071833 WO2013101937A1 (en) 2011-12-29 2012-12-27 Electronic device graphene grid

Publications (1)

Publication Number Publication Date
KR20140128975A true KR20140128975A (ko) 2014-11-06

Family

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Family Applications (3)

Application Number Title Priority Date Filing Date
KR1020147021314A Withdrawn KR20140128975A (ko) 2011-12-29 2012-12-27 그래핀 그리드를 갖는 전자적 디바이스
KR1020147021370A Expired - Fee Related KR101988069B1 (ko) 2011-12-29 2012-12-27 억제기 그리드를 갖는 애노드
KR1020147021047A Expired - Fee Related KR101988068B1 (ko) 2011-12-29 2012-12-27 전계 방출 디바이스

Family Applications After (2)

Application Number Title Priority Date Filing Date
KR1020147021370A Expired - Fee Related KR101988069B1 (ko) 2011-12-29 2012-12-27 억제기 그리드를 갖는 애노드
KR1020147021047A Expired - Fee Related KR101988068B1 (ko) 2011-12-29 2012-12-27 전계 방출 디바이스

Country Status (6)

Country Link
EP (3) EP2798673B1 (enExample)
JP (1) JP6278897B2 (enExample)
KR (3) KR20140128975A (enExample)
CN (5) CN104137254B (enExample)
IN (1) IN2014DN05630A (enExample)
WO (5) WO2013101948A1 (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
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KR101655033B1 (ko) * 2015-06-03 2016-09-06 신라대학교 산학협력단 그래핀을 이용한 진공도 측정 센서 및 진공게이지
US9666401B2 (en) 2014-11-21 2017-05-30 Electronics And Telecommunications Research Institute Field-emission device with improved beams-convergence
KR20210043090A (ko) * 2019-10-11 2021-04-21 성균관대학교산학협력단 2 차원 구조체 및 이의 제조 방법

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US9349562B2 (en) 2011-12-29 2016-05-24 Elwha Llc Field emission device with AC output
US9659735B2 (en) 2012-09-12 2017-05-23 Elwha Llc Applications of graphene grids in vacuum electronics
US9659734B2 (en) 2012-09-12 2017-05-23 Elwha Llc Electronic device multi-layer graphene grid
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WO2015175765A1 (en) * 2014-05-15 2015-11-19 Elwha Llc Applications of graphene grids in vacuum electronics
US11605770B2 (en) * 2017-04-10 2023-03-14 Face International Corporation Autonomous electrical power sources
US10109781B1 (en) * 2017-04-10 2018-10-23 Face International Corporation Methods for fabrication, manufacture and production of an autonomous electrical power source
CN105931931A (zh) * 2016-05-12 2016-09-07 东南大学 一种尖锥阵列场致发射三极结构及其制作方法
CN108231560B (zh) * 2016-12-09 2022-02-15 全球能源互联网研究院 一种控制电极制备方法及mosfet功率器件
CN111725326A (zh) * 2019-03-18 2020-09-29 中国科学院物理研究所 一种基于二维材料的非易失存储器及其操作方法
CN112399868B (zh) * 2019-06-20 2024-06-14 上海联影医疗科技股份有限公司 放射治疗的系统和方法
CN112242276B (zh) * 2019-07-16 2022-03-22 清华大学 场发射中和器
CN112242279B (zh) * 2019-07-16 2022-03-18 清华大学 碳纳米管场发射体及其制备方法
CN112242277B (zh) * 2019-07-16 2022-03-18 清华大学 场发射中和器
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Cited By (3)

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Publication number Priority date Publication date Assignee Title
US9666401B2 (en) 2014-11-21 2017-05-30 Electronics And Telecommunications Research Institute Field-emission device with improved beams-convergence
KR101655033B1 (ko) * 2015-06-03 2016-09-06 신라대학교 산학협력단 그래핀을 이용한 진공도 측정 센서 및 진공게이지
KR20210043090A (ko) * 2019-10-11 2021-04-21 성균관대학교산학협력단 2 차원 구조체 및 이의 제조 방법

Also Published As

Publication number Publication date
EP2797837A1 (en) 2014-11-05
WO2013101951A1 (en) 2013-07-04
CN104769698B (zh) 2017-03-08
EP2801102A1 (en) 2014-11-12
WO2013101941A1 (en) 2013-07-04
KR20140110981A (ko) 2014-09-17
EP2798673A4 (en) 2015-11-18
CN104024147A (zh) 2014-09-03
WO2013101948A1 (en) 2013-07-04
CN104137254B (zh) 2017-06-06
WO2013101937A1 (en) 2013-07-04
EP2798673B1 (en) 2019-01-16
CN104160467A (zh) 2014-11-19
JP6278897B2 (ja) 2018-02-14
CN104160467B (zh) 2017-03-08
WO2013101944A3 (en) 2015-06-11
IN2014DN05630A (enExample) 2015-04-03
KR101988069B1 (ko) 2019-06-11
KR20140116181A (ko) 2014-10-01
KR101988068B1 (ko) 2019-06-11
EP2801102A4 (en) 2015-08-12
CN104137254A (zh) 2014-11-05
CN104137218B (zh) 2017-03-08
EP2797837A4 (en) 2015-08-26
JP2015510655A (ja) 2015-04-09
WO2013101944A2 (en) 2013-07-04
EP2801102B1 (en) 2018-05-30
CN104137218A (zh) 2014-11-05
EP2798673A1 (en) 2014-11-05
CN104769698A (zh) 2015-07-08

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Patent event date: 20140729

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid