KR20140088181A - 반도체 장치 - Google Patents

반도체 장치 Download PDF

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Publication number
KR20140088181A
KR20140088181A KR1020147014321A KR20147014321A KR20140088181A KR 20140088181 A KR20140088181 A KR 20140088181A KR 1020147014321 A KR1020147014321 A KR 1020147014321A KR 20147014321 A KR20147014321 A KR 20147014321A KR 20140088181 A KR20140088181 A KR 20140088181A
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South Korea
Prior art keywords
resin
circuit board
heat dissipating
dissipating device
semiconductor device
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KR1020147014321A
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English (en)
Korean (ko)
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요시타카 이와타
쇼고 모리
다이조 가미야마
Original Assignee
가부시키가이샤 도요다 지도숏키
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Publication of KR20140088181A publication Critical patent/KR20140088181A/ko

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Cooling Or The Like Of Electrical Apparatus (AREA)
KR1020147014321A 2011-12-12 2012-11-07 반도체 장치 KR20140088181A (ko)

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JP2011271575A JP2013123014A (ja) 2011-12-12 2011-12-12 半導体装置
PCT/JP2012/078895 WO2013088864A1 (ja) 2011-12-12 2012-11-07 半導体装置

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JP6524709B2 (ja) * 2014-06-13 2019-06-05 日産自動車株式会社 半導体装置
JP6761800B2 (ja) * 2014-09-09 2020-09-30 セラムテック ゲゼルシャフト ミット ベシュレンクテル ハフツングＣｅｒａｍＴｅｃ ＧｍｂＨ 多層冷却体
EP3038152A1 (de) * 2014-12-26 2016-06-29 Kabushiki Kaisha Toshiba Leiterplatte und halbleitergehäuse mit leiterplatte
DE102015106552B4 (de) * 2015-04-28 2022-06-30 Infineon Technologies Ag Elektronisches Modul mit Fluid-Kühlkanal und Verfahren zum Herstellen desselben
DE102015107489B4 (de) * 2015-05-12 2020-07-02 Infineon Technologies Ag Verfahren zur Reduzierung des Schichtwiderstands in einer elektronischen Vorrichtung
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WO2017179736A1 (ja) * 2016-04-15 2017-10-19 京セラ株式会社 半導体装置
DE102016114303A1 (de) * 2016-08-02 2018-02-08 Infineon Technologies Ag Packung mit teilweise gekapseltem Kühlkanal zum Kühlen eines gekapselten Chips
JP6885175B2 (ja) * 2017-04-14 2021-06-09 富士電機株式会社 半導体装置
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WO2013088864A1 (ja) 2013-06-20
JP2013123014A (ja) 2013-06-20
EP2793260A1 (de) 2014-10-22
EP2793260A4 (de) 2015-08-12
US20140332950A1 (en) 2014-11-13

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