KR20140002564A - 인쇄 레지스트용 활성에너지선 경화성 수지 조성물, 이를 사용한 레지스트 패턴의 형성 방법, 인쇄 레지스트 적층체 및 프린트 배선 기판 - Google Patents

인쇄 레지스트용 활성에너지선 경화성 수지 조성물, 이를 사용한 레지스트 패턴의 형성 방법, 인쇄 레지스트 적층체 및 프린트 배선 기판 Download PDF

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Publication number
KR20140002564A
KR20140002564A KR1020130075933A KR20130075933A KR20140002564A KR 20140002564 A KR20140002564 A KR 20140002564A KR 1020130075933 A KR1020130075933 A KR 1020130075933A KR 20130075933 A KR20130075933 A KR 20130075933A KR 20140002564 A KR20140002564 A KR 20140002564A
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KR
South Korea
Prior art keywords
acid
component
resist
resin composition
active energy
Prior art date
Application number
KR1020130075933A
Other languages
English (en)
Korean (ko)
Inventor
타카시 야마구치
마사유키 츠지
타케시 후쿠다
히데키 고다
Original Assignee
아라까와 가가꾸 고교 가부시끼가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 아라까와 가가꾸 고교 가부시끼가이샤 filed Critical 아라까와 가가꾸 고교 가부시끼가이샤
Publication of KR20140002564A publication Critical patent/KR20140002564A/ko

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits

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  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Medicinal Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Manufacturing Of Printed Circuit Boards (AREA)
  • Polymers With Sulfur, Phosphorus Or Metals In The Main Chain (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Silicon Polymers (AREA)
KR1020130075933A 2012-06-29 2013-06-28 인쇄 레지스트용 활성에너지선 경화성 수지 조성물, 이를 사용한 레지스트 패턴의 형성 방법, 인쇄 레지스트 적층체 및 프린트 배선 기판 KR20140002564A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2012-146645 2012-06-29
JP2012146645 2012-06-29

Publications (1)

Publication Number Publication Date
KR20140002564A true KR20140002564A (ko) 2014-01-08

Family

ID=50139531

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020130075933A KR20140002564A (ko) 2012-06-29 2013-06-28 인쇄 레지스트용 활성에너지선 경화성 수지 조성물, 이를 사용한 레지스트 패턴의 형성 방법, 인쇄 레지스트 적층체 및 프린트 배선 기판

Country Status (4)

Country Link
JP (1) JP5787239B2 (ja)
KR (1) KR20140002564A (ja)
CN (1) CN103713470B (ja)
TW (1) TWI588611B (ja)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015071741A (ja) * 2013-09-04 2015-04-16 Jsr株式会社 硬化性組成物、ナノインプリント材料、硬化膜、積層体、硬化膜の製造方法、パターン形成方法及び半導体発光素子用基板
JP6428646B2 (ja) 2014-01-24 2018-11-28 富士フイルム和光純薬株式会社 ボレート系塩基発生剤および該塩基発生剤を含有する塩基反応性組成物
US10604653B2 (en) * 2015-10-19 2020-03-31 Dow Toray Co., Ltd. Active energy ray curable hot melt silicone composition, cured product thereof, and method of producing film
JP6792255B2 (ja) * 2016-05-16 2020-11-25 Dic株式会社 導電パターンの形成方法および電子デバイスの製造方法
JP6993529B1 (ja) 2021-06-02 2022-01-13 大日精化工業株式会社 プラスチック基材用グラビアインキ組成物及びその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56118472A (en) * 1980-02-23 1981-09-17 Touka Shikiso Kagaku Kogyo Kk Ultraviolet-curable ink composition
JPH028270A (ja) * 1988-06-28 1990-01-11 Toshiba Corp ソルダーレジストインキ組成物
JPH04369652A (ja) * 1991-06-18 1992-12-22 Aisero Kagaku Kk 感光性樹脂組成物
JPH08320564A (ja) * 1995-05-25 1996-12-03 Toyo Ink Mfg Co Ltd フォトソルダーレジスト組成物
JP3304904B2 (ja) * 1998-12-28 2002-07-22 荒川化学工業株式会社 活性エネルギー線硬化性樹脂組成物
TWI296738B (ja) * 2001-03-29 2008-05-11 Hitachi Chemical Co Ltd
JP5556011B2 (ja) * 2008-12-26 2014-07-23 荒川化学工業株式会社 パターン形成剤、パターン形成方法およびパターンが形成された基板
JP2013112721A (ja) * 2011-11-28 2013-06-10 Samsung Yokohama Research Institute Co Ltd キチンナノファイバー複合材料およびその製造方法

Also Published As

Publication number Publication date
JP2014028938A (ja) 2014-02-13
JP5787239B2 (ja) 2015-09-30
TWI588611B (zh) 2017-06-21
TW201413391A (zh) 2014-04-01
CN103713470A (zh) 2014-04-09
CN103713470B (zh) 2019-09-24

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