KR20130138232A - 실리콘 생산에 적합한, 기계적으로 유동화되는 반응기 시스템들 및 방법들 - Google Patents
실리콘 생산에 적합한, 기계적으로 유동화되는 반응기 시스템들 및 방법들 Download PDFInfo
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- KR20130138232A KR20130138232A KR1020137008927A KR20137008927A KR20130138232A KR 20130138232 A KR20130138232 A KR 20130138232A KR 1020137008927 A KR1020137008927 A KR 1020137008927A KR 20137008927 A KR20137008927 A KR 20137008927A KR 20130138232 A KR20130138232 A KR 20130138232A
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- Prior art keywords
- containment vessel
- gas
- controlled
- beads
- species
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- 238000000034 method Methods 0.000 title claims abstract description 102
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 17
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 17
- 239000010703 silicon Substances 0.000 title claims abstract description 17
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 68
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 45
- 229910000077 silane Inorganic materials 0.000 claims description 43
- 239000000428 dust Substances 0.000 claims description 40
- 239000013626 chemical specie Substances 0.000 claims description 36
- 239000003085 diluting agent Substances 0.000 claims description 32
- 239000001257 hydrogen Substances 0.000 claims description 32
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- 238000010438 heat treatment Methods 0.000 claims description 30
- 230000010355 oscillation Effects 0.000 claims description 26
- 238000000354 decomposition reaction Methods 0.000 claims description 22
- 150000002431 hydrogen Chemical class 0.000 claims description 22
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 22
- 229920005591 polysilicon Polymers 0.000 claims description 22
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims description 16
- ZDHXKXAHOVTTAH-UHFFFAOYSA-N trichlorosilane Chemical compound Cl[SiH](Cl)Cl ZDHXKXAHOVTTAH-UHFFFAOYSA-N 0.000 claims description 15
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- 238000005070 sampling Methods 0.000 claims description 5
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- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 15
- 239000000047 product Substances 0.000 description 15
- 239000000460 chlorine Substances 0.000 description 10
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- KOPOQZFJUQMUML-UHFFFAOYSA-N chlorosilane Chemical class Cl[SiH3] KOPOQZFJUQMUML-UHFFFAOYSA-N 0.000 description 9
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- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 6
- 229910052801 chlorine Inorganic materials 0.000 description 6
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- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 2
- LOYTUFQOTJYLPX-UHFFFAOYSA-N C1=CC=[Si]C=C1 Chemical compound C1=CC=[Si]C=C1 LOYTUFQOTJYLPX-UHFFFAOYSA-N 0.000 description 2
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 239000006125 LAS system Substances 0.000 description 1
- 229910018068 Li 2 O Inorganic materials 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
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- 239000006112 glass ceramic composition Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
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- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
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- 238000009987 spinning Methods 0.000 description 1
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Images
Classifications
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- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- B01J2208/00106—Controlling the temperature by indirect heat exchange
- B01J2208/00168—Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles
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- B01J2208/00389—Controlling the temperature using electric heating or cooling elements
- B01J2208/00407—Controlling the temperature using electric heating or cooling elements outside the reactor bed
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- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00389—Controlling the temperature using electric heating or cooling elements
- B01J2208/00415—Controlling the temperature using electric heating or cooling elements electric resistance heaters
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
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- B01J2208/00008—Controlling the process
- B01J2208/00017—Controlling the temperature
- B01J2208/00477—Controlling the temperature by thermal insulation means
- B01J2208/00495—Controlling the temperature by thermal insulation means using insulating materials or refractories
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- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
- B01J2208/00796—Details of the reactor or of the particulate material
- B01J2208/00884—Means for supporting the bed of particles, e.g. grids, bars, perforated plates
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Silicon Compounds (AREA)
- Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US39097710P | 2010-10-07 | 2010-10-07 | |
| US61/390,977 | 2010-10-07 | ||
| PCT/US2011/053675 WO2012047695A2 (en) | 2010-10-07 | 2011-09-28 | Mechanically fluidized reactor systems and methods, suitable for production of silicon |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR20130138232A true KR20130138232A (ko) | 2013-12-18 |
Family
ID=45924114
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1020137008927A Ceased KR20130138232A (ko) | 2010-10-07 | 2011-09-28 | 실리콘 생산에 적합한, 기계적으로 유동화되는 반응기 시스템들 및 방법들 |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US20120085284A1 (enExample) |
| EP (1) | EP2625308A4 (enExample) |
| JP (1) | JP2013539823A (enExample) |
| KR (1) | KR20130138232A (enExample) |
| CN (1) | CN103154314B (enExample) |
| BR (1) | BR112013008352A2 (enExample) |
| CA (1) | CA2813884A1 (enExample) |
| EA (1) | EA025524B1 (enExample) |
| TW (1) | TW201224194A (enExample) |
| UA (1) | UA112063C2 (enExample) |
| WO (1) | WO2012047695A2 (enExample) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN103153856A (zh) * | 2010-09-30 | 2013-06-12 | 捷恩智株式会社 | 多晶硅制造装置以及多晶硅制造方法 |
| FR2977259B1 (fr) * | 2011-06-28 | 2013-08-02 | Commissariat Energie Atomique | Dispositif a profil specifique de reacteur de type lit a jet pour depot par cvd |
| US8871153B2 (en) | 2012-05-25 | 2014-10-28 | Rokstar Technologies Llc | Mechanically fluidized silicon deposition systems and methods |
| KR101441370B1 (ko) * | 2013-01-31 | 2014-11-03 | 한국에너지기술연구원 | 나노입자 포집장치 |
| EP2767337B1 (en) * | 2013-02-14 | 2016-11-02 | Directa Plus S.p.A. | Method and apparatus for fabricating solid support metal catalyst composites |
| EP2985079B1 (en) | 2014-08-13 | 2018-10-03 | Directa Plus S.p.A. | Production process of a core/shell structured solid support metal catalyst |
| CN107250428A (zh) * | 2014-12-23 | 2017-10-13 | 斯泰克有限责任公司 | 机械式流化沉积系统和方法 |
| CA2972658A1 (en) * | 2014-12-30 | 2016-07-07 | Sitec Gmbh | Crystal production systems and methods |
| EP3307426A4 (en) | 2015-06-15 | 2018-12-19 | ALD Nanosolutions, Inc. | Continuous spatial atomic layer deposition process and apparatus for applying films on particles |
| WO2017172745A1 (en) * | 2016-03-30 | 2017-10-05 | Sitec Gmbh | Mechanically vibrated packed bed reactor and related methods |
| EP3512979A4 (en) * | 2016-09-16 | 2020-05-20 | Picosun Oy | PARTICLE COATING BY ATOMIC LAYER DEPOSITION (ALD) |
| US20190161859A1 (en) * | 2017-11-30 | 2019-05-30 | Ying-Bing JIANG | Apparatus for making large-scale atomic layer deposition on powdered materials with plowing action |
| JP7260628B2 (ja) | 2018-07-19 | 2023-04-18 | アプライド マテリアルズ インコーポレイテッド | 粒子をコーティングする方法及び装置 |
| WO2021008693A1 (de) * | 2019-07-16 | 2021-01-21 | Wacker Chemie Ag | Verfahren zur herstellung von polykristallinem silicium |
| TWI729945B (zh) * | 2020-10-06 | 2021-06-01 | 天虹科技股份有限公司 | 在粉末上形成薄膜的原子層沉積裝置 |
| TWI729944B (zh) * | 2020-10-06 | 2021-06-01 | 天虹科技股份有限公司 | 粉末的原子層沉積裝置 |
| TWI772913B (zh) * | 2020-10-06 | 2022-08-01 | 天虹科技股份有限公司 | 微粒的原子層沉積裝置 |
| TWI750836B (zh) * | 2020-10-06 | 2021-12-21 | 天虹科技股份有限公司 | 可拆式粉末原子層沉積裝置 |
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2011
- 2011-09-28 EA EA201370086A patent/EA025524B1/ru not_active IP Right Cessation
- 2011-09-28 EP EP11831332.9A patent/EP2625308A4/en not_active Withdrawn
- 2011-09-28 JP JP2013532836A patent/JP2013539823A/ja active Pending
- 2011-09-28 CN CN201180048337.4A patent/CN103154314B/zh not_active Expired - Fee Related
- 2011-09-28 UA UAA201305736A patent/UA112063C2/uk unknown
- 2011-09-28 US US13/247,354 patent/US20120085284A1/en not_active Abandoned
- 2011-09-28 WO PCT/US2011/053675 patent/WO2012047695A2/en not_active Ceased
- 2011-09-28 KR KR1020137008927A patent/KR20130138232A/ko not_active Ceased
- 2011-09-28 BR BR112013008352A patent/BR112013008352A2/pt not_active IP Right Cessation
- 2011-09-28 CA CA2813884A patent/CA2813884A1/en not_active Abandoned
- 2011-10-07 TW TW100136607A patent/TW201224194A/zh unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20240065056A (ko) * | 2021-07-21 | 2024-05-14 | 주식회사 소로나 | 파우더 코팅 방법 및 장치 |
Also Published As
| Publication number | Publication date |
|---|---|
| UA112063C2 (uk) | 2016-07-25 |
| CA2813884A1 (en) | 2012-04-12 |
| US20120085284A1 (en) | 2012-04-12 |
| BR112013008352A2 (pt) | 2017-03-01 |
| JP2013539823A (ja) | 2013-10-28 |
| TW201224194A (en) | 2012-06-16 |
| EA201370086A1 (ru) | 2013-07-30 |
| EP2625308A2 (en) | 2013-08-14 |
| WO2012047695A3 (en) | 2012-08-02 |
| CN103154314A (zh) | 2013-06-12 |
| WO2012047695A2 (en) | 2012-04-12 |
| EA025524B1 (ru) | 2017-01-30 |
| CN103154314B (zh) | 2016-02-17 |
| EP2625308A4 (en) | 2016-10-19 |
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