EA201370086A1 - Реакторные системы механического псевдоожижения слоя и способы, пригодные для производства кремния - Google Patents

Реакторные системы механического псевдоожижения слоя и способы, пригодные для производства кремния

Info

Publication number
EA201370086A1
EA201370086A1 EA201370086A EA201370086A EA201370086A1 EA 201370086 A1 EA201370086 A1 EA 201370086A1 EA 201370086 A EA201370086 A EA 201370086A EA 201370086 A EA201370086 A EA 201370086A EA 201370086 A1 EA201370086 A1 EA 201370086A1
Authority
EA
Eurasian Patent Office
Prior art keywords
tray
mechanical
production
psydware
silicon
Prior art date
Application number
EA201370086A
Other languages
English (en)
Other versions
EA025524B1 (ru
Inventor
Марк В. Дассель
Original Assignee
Марк В. Дассель
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Марк В. Дассель filed Critical Марк В. Дассель
Publication of EA201370086A1 publication Critical patent/EA201370086A1/ru
Publication of EA025524B1 publication Critical patent/EA025524B1/ru

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/0015—Feeding of the particles in the reactor; Evacuation of the particles out of the reactor
    • B01J8/002—Feeding of the particles in the reactor; Evacuation of the particles out of the reactor with a moving instrument
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J8/00—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes
    • B01J8/16—Chemical or physical processes in general, conducted in the presence of fluids and solid particles; Apparatus for such processes with particles being subjected to vibrations or pulsations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/223—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating specially adapted for coating particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4417—Methods specially adapted for coating powder
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/442—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using fluidised bed process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00106—Controlling the temperature by indirect heat exchange
    • B01J2208/00168—Controlling the temperature by indirect heat exchange with heat exchange elements outside the bed of solid particles
    • B01J2208/00212—Plates; Jackets; Cylinders
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00389—Controlling the temperature using electric heating or cooling elements
    • B01J2208/00407—Controlling the temperature using electric heating or cooling elements outside the reactor bed
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00389—Controlling the temperature using electric heating or cooling elements
    • B01J2208/00415—Controlling the temperature using electric heating or cooling elements electric resistance heaters
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00008—Controlling the process
    • B01J2208/00017—Controlling the temperature
    • B01J2208/00477—Controlling the temperature by thermal insulation means
    • B01J2208/00495—Controlling the temperature by thermal insulation means using insulating materials or refractories
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00743—Feeding or discharging of solids
    • B01J2208/00752—Feeding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00743—Feeding or discharging of solids
    • B01J2208/00761—Discharging
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2208/00—Processes carried out in the presence of solid particles; Reactors therefor
    • B01J2208/00796—Details of the reactor or of the particulate material
    • B01J2208/00884—Means for supporting the bed of particles, e.g. grids, bars, perforated plates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)
  • Devices And Processes Conducted In The Presence Of Fluids And Solid Particles (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Системы и способы механического псевдоожижения обеспечивают эффективное, рентабельное производство кремния. Частицы могут подаваться в нагретый лоток или поддон, который подвергается воздействию колебаний или вибраций с тем, чтобы обеспечить реакционную поверхность. Частицы перемещаются вниз в лотке или поддоне, а продукт реакции перемещается вверх в лотке или поддоне, по мере того как продукт реакции достигает необходимого состояния. Отходящие газы могут повторно использоваться.
EA201370086A 2010-10-07 2011-09-28 Реакторные системы механического псевдоожижения слоя и способы, пригодные для производства кремния EA025524B1 (ru)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US39097710P 2010-10-07 2010-10-07
PCT/US2011/053675 WO2012047695A2 (en) 2010-10-07 2011-09-28 Mechanically fluidized reactor systems and methods, suitable for production of silicon

Publications (2)

Publication Number Publication Date
EA201370086A1 true EA201370086A1 (ru) 2013-07-30
EA025524B1 EA025524B1 (ru) 2017-01-30

Family

ID=45924114

Family Applications (1)

Application Number Title Priority Date Filing Date
EA201370086A EA025524B1 (ru) 2010-10-07 2011-09-28 Реакторные системы механического псевдоожижения слоя и способы, пригодные для производства кремния

Country Status (11)

Country Link
US (1) US20120085284A1 (ru)
EP (1) EP2625308A4 (ru)
JP (1) JP2013539823A (ru)
KR (1) KR20130138232A (ru)
CN (1) CN103154314B (ru)
BR (1) BR112013008352A2 (ru)
CA (1) CA2813884A1 (ru)
EA (1) EA025524B1 (ru)
TW (1) TW201224194A (ru)
UA (1) UA112063C2 (ru)
WO (1) WO2012047695A2 (ru)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012043316A1 (ja) * 2010-09-30 2012-04-05 Jnc株式会社 多結晶シリコン製造装置および多結晶シリコン製造方法
FR2977259B1 (fr) * 2011-06-28 2013-08-02 Commissariat Energie Atomique Dispositif a profil specifique de reacteur de type lit a jet pour depot par cvd
US8871153B2 (en) * 2012-05-25 2014-10-28 Rokstar Technologies Llc Mechanically fluidized silicon deposition systems and methods
KR101441370B1 (ko) * 2013-01-31 2014-11-03 한국에너지기술연구원 나노입자 포집장치
EP2767337B1 (en) * 2013-02-14 2016-11-02 Directa Plus S.p.A. Method and apparatus for fabricating solid support metal catalyst composites
EP2985079B1 (en) 2014-08-13 2018-10-03 Directa Plus S.p.A. Production process of a core/shell structured solid support metal catalyst
US20180051373A1 (en) * 2014-12-23 2018-02-22 Sitec Gmbh Mechanically vibrated based reactor systems and methods
KR20180025837A (ko) * 2014-12-30 2018-03-09 시텍 게엠베하 결정 생성 시스템들 및 방법들
EP3307426A4 (en) * 2015-06-15 2018-12-19 ALD Nanosolutions, Inc. Continuous spatial atomic layer deposition process and apparatus for applying films on particles
WO2017172745A1 (en) * 2016-03-30 2017-10-05 Sitec Gmbh Mechanically vibrated packed bed reactor and related methods
JP2019530798A (ja) * 2016-09-16 2019-10-24 ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ 原子層堆積（ａｌｄ）による粒子コーティング
US20190161859A1 (en) * 2017-11-30 2019-05-30 Ying-Bing JIANG Apparatus for making large-scale atomic layer deposition on powdered materials with plowing action
US11242599B2 (en) * 2018-07-19 2022-02-08 Applied Materials, Inc. Particle coating methods and apparatus
TWI729944B (zh) * 2020-10-06 2021-06-01 天虹科技股份有限公司 粉末的原子層沉積裝置
TWI772913B (zh) * 2020-10-06 2022-08-01 天虹科技股份有限公司 微粒的原子層沉積裝置
TWI729945B (zh) * 2020-10-06 2021-06-01 天虹科技股份有限公司 在粉末上形成薄膜的原子層沉積裝置
TWI750836B (zh) * 2020-10-06 2021-12-21 天虹科技股份有限公司 可拆式粉末原子層沉積裝置
US11952662B2 (en) * 2021-10-18 2024-04-09 Sky Tech Inc. Powder atomic layer deposition equipment with quick release function
KR102712596B1 (ko) * 2022-08-29 2024-09-30 오씨아이 주식회사 실리콘 마이크로 입자의 제조방법 및 이에 의해 제조된 실리콘 마이크로 입자

Family Cites Families (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3091517A (en) * 1959-11-25 1963-05-28 Texas Instruments Inc Method for recovery and recycling hydrogen and silicon halides from silicon deposition reactor exhaust
US3161483A (en) * 1960-02-15 1964-12-15 Rex Chainbelt Inc Vibrating fluidized systems
US3585268A (en) * 1968-01-04 1971-06-15 Owens Illinois Inc Metal-lined glass melter
US3640767A (en) * 1969-05-16 1972-02-08 Rca Corp Encapsulated magnetic memory element
US3963838A (en) * 1974-05-24 1976-06-15 Texas Instruments Incorporated Method of operating a quartz fluidized bed reactor for the production of silicon
DE2620739A1 (de) * 1976-05-11 1977-12-01 Wacker Chemitronic Verfahren zur herstellung von hochreinem silicium
JPS546892A (en) * 1977-06-20 1979-01-19 Minoru Tanmachi Method and apparatus for regenerating active carbon
US4628838A (en) * 1980-11-19 1986-12-16 Peabody Engineering Corp. Fluidized bed combustion method
US4354987A (en) * 1981-03-31 1982-10-19 Union Carbide Corporation Consolidation of high purity silicon powder
DE3141906A1 (de) * 1981-10-08 1983-04-21 Degussa Ag, 6000 Frankfurt Verfahren und vorrichtung zur durchfuehrung von gas/feststoff-reaktionen, insbesondere zum aktivieren und reaktivieren von aktivkohle
US4440108A (en) * 1982-09-24 1984-04-03 Spire Corporation Ion beam coating apparatus
JPS59115736A (ja) * 1982-12-23 1984-07-04 Toshiba Corp シリコン顆粒供給装置
US4606941A (en) * 1983-07-21 1986-08-19 Jenkin William C Deposition metalizing bulk material by chemical vapor
JPH0622689B2 (ja) * 1986-02-24 1994-03-30 中央化工機株式会社 恒温装置
JPS63270394A (ja) * 1987-04-28 1988-11-08 Showa Denko Kk 流動式ダイヤモンド合成方法及び合成装置
JPS6414194A (en) * 1987-07-09 1989-01-18 Showa Denko Kk Method and device for synthesizing diamond by fluidized system
JP2637134B2 (ja) * 1988-01-21 1997-08-06 昭和電工株式会社 気相法ダイヤモンドの合成法
US5118485A (en) * 1988-03-25 1992-06-02 Hemlock Semiconductor Corporation Recovery of lower-boiling silanes in a cvd process
JPH05246786A (ja) * 1991-07-02 1993-09-24 L'air Liquide コア粉体の存在下で化学蒸着法により珪素ベース超微粒子をコア粉に均一に塗布する方法
JPH063866A (ja) * 1992-06-19 1994-01-14 Mitsubishi Kasei Corp 静電荷像現像用コートキャリアの製造法
JPH06127924A (ja) * 1992-10-16 1994-05-10 Tonen Chem Corp 多結晶シリコンの製造方法
JP3103227B2 (ja) * 1992-12-09 2000-10-30 株式会社日立製作所 半導体装置の製造方法
US6190625B1 (en) * 1997-08-07 2001-02-20 Qualchem, Inc. Fluidized-bed roasting of molybdenite concentrates
US6015597A (en) * 1997-11-26 2000-01-18 3M Innovative Properties Company Method for coating diamond-like networks onto particles
US20010041117A1 (en) * 1997-12-12 2001-11-15 Comardo Mathis P. Catalytic reactor charging system and method for operation thereof
JP4545433B2 (ja) * 2003-12-26 2010-09-15 東京エレクトロン株式会社 成膜方法
FR2872061B1 (fr) * 2004-06-23 2007-04-27 Toulouse Inst Nat Polytech Composition solide divisee formee de grains a depot metallique atomique continu et son procede d'obtention
WO2008119514A1 (de) * 2007-03-29 2008-10-09 Hauzer Techno Coating Bv Verfahren und vorrichtung zur beschichtung von insbesondere gerundeten gegenständen mittels eines pvd-und/oder cvd- oder pacvd-verfahrens in einer vakuumanlage

Also Published As

Publication number Publication date
EP2625308A2 (en) 2013-08-14
EA025524B1 (ru) 2017-01-30
CN103154314B (zh) 2016-02-17
UA112063C2 (uk) 2016-07-25
CA2813884A1 (en) 2012-04-12
WO2012047695A3 (en) 2012-08-02
KR20130138232A (ko) 2013-12-18
EP2625308A4 (en) 2016-10-19
WO2012047695A2 (en) 2012-04-12
BR112013008352A2 (pt) 2017-03-01
JP2013539823A (ja) 2013-10-28
TW201224194A (en) 2012-06-16
CN103154314A (zh) 2013-06-12
US20120085284A1 (en) 2012-04-12

Similar Documents

Publication Publication Date Title
EA201370086A1 (ru) Реакторные системы механического псевдоожижения слоя и способы, пригодные для производства кремния
EA201492201A1 (ru) Системы и способы осаждения кремния с применением механического псевдоожижения
ZA201500377B (en) Bubbling bed catalytic hydropyrolysis process utilizing larger catalyst particles and smaller biomass particles featuring an anti-slugging reactor
MY161339A (en) Catalysts
CL2015000892A1 (es) Proceso para la co-producción de bioenergía y productos desde la conversión integrada de biomasas y residuos municipales.
IN2014DN08410A (ru)
EA201391105A1 (ru) Высокопроизводительная реакторная установка для полимеризации олефинов
PL2819785T3 (pl) Sposób i urządzenie do przygotowania biomasy do wytwarzania energii na dużą skalę
ZA201405491B (en) Biomass syngas purification process under negative pressure for producing oil and system configuration thereof
IN2014CN02732A (ru)
TWI561298B (en) Continuous emulsification-aggregation process for the production of particles and reactor for the process
IN2015DN02940A (ru)
PL2711411T3 (pl) Proces i urządzenie do produkcji paliwa stałego z odpadów palnych
EP2800799A4 (en) TWO-STAGE REACTOR AND METHOD FOR THE CONVERSION OF SOLID BIOMASS MATERIAL
WO2013059523A3 (en) Carbonaceous material for purifying lignocellulosic oligomers
WO2012153963A3 (ko) 금속 구조체 표면에 다공성 담체층을 형성하는 방법 및 그로부터 제조된 촉매 모듈
GB201103256D0 (en) Solid support and method of recovering biological material therefrom
EP3031880A4 (en) DRY STILLING REACTOR AND METHOD FOR RAW MATERIAL OF HYDROCARBONS WITH SOLID HEAT CARRIER
EP2520856A4 (en) HIGHLY EFFICIENT COMBUSTION DEVICE AND CATALYTIC FLOATBED CRACKING METHOD FOR THE PRODUCTION OF LIGHT OLEFINS
EA201500258A1 (ru) Устройство и способ для конверсии метана, использующие сверхзвуковой проточный реактор
EP2689862A4 (en) PROCESS FOR THE PRETREATMENT OF BASIC MATERIALS FOR HYDROLYTIC REACTION OF A PLANT BIOMASS AND METHOD FOR SACCHARIFYING BIOMASS VEGETALE
UA111965C2 (uk) Спосіб і пристрій для одержання гранульованої сечовини як продукту
MX2012003774A (es) Metodo para impartir actividad antibiotica a la superficie de un sustrato solido.
EA201290215A1 (ru) Устройство для обработки твердых продуктов и/или газов
PL394361A1 (pl) Sposób termicznej utylizacji mieszaniny wysuszonego osadu sciekowego z biomasa poprzez zgazowanie

Legal Events

Date Code Title Description
MM4A Lapse of a eurasian patent due to non-payment of renewal fees within the time limit in the following designated state(s)

Designated state(s): AM AZ BY KZ KG MD TJ TM RU