KR20120106808A - 광전자 반도체 컴포넌트용 하우징을 제조하기 위한 방법, 하우징 및 광전자 반도체 컴포넌트 - Google Patents

광전자 반도체 컴포넌트용 하우징을 제조하기 위한 방법, 하우징 및 광전자 반도체 컴포넌트 Download PDF

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Publication number
KR20120106808A
KR20120106808A KR1020127018624A KR20127018624A KR20120106808A KR 20120106808 A KR20120106808 A KR 20120106808A KR 1020127018624 A KR1020127018624 A KR 1020127018624A KR 20127018624 A KR20127018624 A KR 20127018624A KR 20120106808 A KR20120106808 A KR 20120106808A
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KR
South Korea
Prior art keywords
housing
reflector part
semiconductor component
optoelectronic semiconductor
plastic material
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KR1020127018624A
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English (en)
Korean (ko)
Inventor
게르트루트 크로이터
베른트 바르히만
Original Assignee
오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20120106808A publication Critical patent/KR20120106808A/ko
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/851—Dispositions of multiple connectors or interconnections
    • H10W72/874—On different surfaces
    • H10W72/884—Die-attach connectors and bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/736—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked lead frame, conducting package substrate or heat sink
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

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  • Led Device Packages (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
KR1020127018624A 2009-12-16 2010-11-17 광전자 반도체 컴포넌트용 하우징을 제조하기 위한 방법, 하우징 및 광전자 반도체 컴포넌트 Withdrawn KR20120106808A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009058421.8 2009-12-16
DE102009058421A DE102009058421A1 (de) 2009-12-16 2009-12-16 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil

Publications (1)

Publication Number Publication Date
KR20120106808A true KR20120106808A (ko) 2012-09-26

Family

ID=43608617

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127018624A Withdrawn KR20120106808A (ko) 2009-12-16 2010-11-17 광전자 반도체 컴포넌트용 하우징을 제조하기 위한 방법, 하우징 및 광전자 반도체 컴포넌트

Country Status (7)

Country Link
US (1) US9331255B2 (https=)
EP (1) EP2513985A1 (https=)
JP (1) JP2013514641A (https=)
KR (1) KR20120106808A (https=)
CN (1) CN102668144A (https=)
DE (1) DE102009058421A1 (https=)
WO (1) WO2011082876A1 (https=)

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TW201432949A (zh) * 2013-02-05 2014-08-16 隆達電子股份有限公司 發光模組及其製造方法
KR20140141227A (ko) * 2013-05-31 2014-12-10 제일모직주식회사 반사율 및 내변색성이 우수한 폴리아미드계 수지 조성물
WO2015157178A1 (en) * 2014-04-07 2015-10-15 Crystal Is, Inc. Ultraviolet light-emitting devices and methods
DE102014105839A1 (de) * 2014-04-25 2015-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
KR102252156B1 (ko) * 2014-07-08 2021-05-17 엘지이노텍 주식회사 발광 소자 패키지
JP6671117B2 (ja) * 2014-07-08 2020-03-25 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
EP3306683A4 (en) 2015-06-01 2018-12-19 Mitsubishi Electric Corporation Light emitting device, display unit, and image display device
KR102509312B1 (ko) * 2016-02-24 2023-03-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
CN108633317B (zh) * 2016-02-12 2021-07-09 Lg 伊诺特有限公司 发光器件封装和包括该发光器件封装的照明设备
KR102562091B1 (ko) * 2016-02-12 2023-08-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
DE102016103059A1 (de) * 2016-02-22 2017-08-24 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102016105243A1 (de) * 2016-03-21 2017-09-21 Infineon Technologies Ag Räumlich Selektives Aufrauen von Verkapselungsmasse, um eine Haftung mit einer Funktionsstruktur zu Fördern
JP7450466B2 (ja) * 2020-06-22 2024-03-15 スタンレー電気株式会社 発光装置及び発光装置の製造方法
CN112816071B (zh) * 2021-01-06 2021-12-28 国家卫星气象中心(国家空间天气监测预警中心) 一种基于云顶高度算法的红外通道辐射稳定性监测方法
WO2024235649A1 (en) * 2023-05-17 2024-11-21 Ams-Osram International Gmbh Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device

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JP2002374007A (ja) * 2001-06-15 2002-12-26 Toyoda Gosei Co Ltd 発光装置
JP4211359B2 (ja) * 2002-03-06 2009-01-21 日亜化学工業株式会社 半導体装置の製造方法
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JP4846498B2 (ja) * 2006-09-22 2011-12-28 株式会社東芝 光半導体装置及び光半導体装置の製造方法
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Also Published As

Publication number Publication date
EP2513985A1 (de) 2012-10-24
DE102009058421A1 (de) 2011-06-22
US9331255B2 (en) 2016-05-03
US20120280116A1 (en) 2012-11-08
WO2011082876A1 (de) 2011-07-14
JP2013514641A (ja) 2013-04-25
CN102668144A (zh) 2012-09-12

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Date Code Title Description
PA0105 International application

Patent event date: 20120716

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid