KR20120106808A - 광전자 반도체 컴포넌트용 하우징을 제조하기 위한 방법, 하우징 및 광전자 반도체 컴포넌트 - Google Patents

광전자 반도체 컴포넌트용 하우징을 제조하기 위한 방법, 하우징 및 광전자 반도체 컴포넌트 Download PDF

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Publication number
KR20120106808A
KR20120106808A KR1020127018624A KR20127018624A KR20120106808A KR 20120106808 A KR20120106808 A KR 20120106808A KR 1020127018624 A KR1020127018624 A KR 1020127018624A KR 20127018624 A KR20127018624 A KR 20127018624A KR 20120106808 A KR20120106808 A KR 20120106808A
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South Korea
Prior art keywords
housing
reflector part
semiconductor component
optoelectronic semiconductor
plastic material
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KR1020127018624A
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English (en)
Korean (ko)
Inventor
게르트루트 크로이터
베른트 바르히만
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오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20120106808A publication Critical patent/KR20120106808A/ko
Withdrawn legal-status Critical Current

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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/855Optical field-shaping means, e.g. lenses
    • H10H20/856Reflecting means
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71

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  • Led Device Packages (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
KR1020127018624A 2009-12-16 2010-11-17 광전자 반도체 컴포넌트용 하우징을 제조하기 위한 방법, 하우징 및 광전자 반도체 컴포넌트 Withdrawn KR20120106808A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009058421A DE102009058421A1 (de) 2009-12-16 2009-12-16 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
DE102009058421.8 2009-12-16

Publications (1)

Publication Number Publication Date
KR20120106808A true KR20120106808A (ko) 2012-09-26

Family

ID=43608617

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127018624A Withdrawn KR20120106808A (ko) 2009-12-16 2010-11-17 광전자 반도체 컴포넌트용 하우징을 제조하기 위한 방법, 하우징 및 광전자 반도체 컴포넌트

Country Status (7)

Country Link
US (1) US9331255B2 (enExample)
EP (1) EP2513985A1 (enExample)
JP (1) JP2013514641A (enExample)
KR (1) KR20120106808A (enExample)
CN (1) CN102668144A (enExample)
DE (1) DE102009058421A1 (enExample)
WO (1) WO2011082876A1 (enExample)

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KR20140141227A (ko) * 2013-05-31 2014-12-10 제일모직주식회사 반사율 및 내변색성이 우수한 폴리아미드계 수지 조성물
US9293670B2 (en) * 2014-04-07 2016-03-22 Crystal Is, Inc. Ultraviolet light-emitting devices and methods
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JP6671117B2 (ja) * 2014-07-08 2020-03-25 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
KR102252156B1 (ko) * 2014-07-08 2021-05-17 엘지이노텍 주식회사 발광 소자 패키지
EP3306683A4 (en) 2015-06-01 2018-12-19 Mitsubishi Electric Corporation Light emitting device, display unit, and image display device
KR102509312B1 (ko) * 2016-02-24 2023-03-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
CN108633317B (zh) * 2016-02-12 2021-07-09 Lg 伊诺特有限公司 发光器件封装和包括该发光器件封装的照明设备
KR102562091B1 (ko) * 2016-02-12 2023-08-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
DE102016103059A1 (de) * 2016-02-22 2017-08-24 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102016105243A1 (de) 2016-03-21 2017-09-21 Infineon Technologies Ag Räumlich Selektives Aufrauen von Verkapselungsmasse, um eine Haftung mit einer Funktionsstruktur zu Fördern
JP7450466B2 (ja) * 2020-06-22 2024-03-15 スタンレー電気株式会社 発光装置及び発光装置の製造方法
CN112816071B (zh) * 2021-01-06 2021-12-28 国家卫星气象中心(国家空间天气监测预警中心) 一种基于云顶高度算法的红外通道辐射稳定性监测方法
WO2024235649A1 (en) * 2023-05-17 2024-11-21 Ams-Osram International Gmbh Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device

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Also Published As

Publication number Publication date
US20120280116A1 (en) 2012-11-08
JP2013514641A (ja) 2013-04-25
US9331255B2 (en) 2016-05-03
CN102668144A (zh) 2012-09-12
EP2513985A1 (de) 2012-10-24
DE102009058421A1 (de) 2011-06-22
WO2011082876A1 (de) 2011-07-14

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PA0105 International application

Patent event date: 20120716

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
PC1203 Withdrawal of no request for examination
WITN Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid