JP2013514641A - オプトエレクトロニクス半導体部品のハウジングの製造方法、ハウジング、およびオプトエレクトロニクス半導体部品 - Google Patents

オプトエレクトロニクス半導体部品のハウジングの製造方法、ハウジング、およびオプトエレクトロニクス半導体部品 Download PDF

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Publication number
JP2013514641A
JP2013514641A JP2012543566A JP2012543566A JP2013514641A JP 2013514641 A JP2013514641 A JP 2013514641A JP 2012543566 A JP2012543566 A JP 2012543566A JP 2012543566 A JP2012543566 A JP 2012543566A JP 2013514641 A JP2013514641 A JP 2013514641A
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Japan
Prior art keywords
reflector
housing
plastic material
inner region
electromagnetic radiation
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JP2012543566A
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Japanese (ja)
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JP2013514641A5 (enExample
Inventor
ゲルトルート クラウター
ベルント バーチマン
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
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Publication of JP2013514641A publication Critical patent/JP2013514641A/ja
Publication of JP2013514641A5 publication Critical patent/JP2013514641A5/ja
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71

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  • Led Device Packages (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
JP2012543566A 2009-12-16 2010-11-17 オプトエレクトロニクス半導体部品のハウジングの製造方法、ハウジング、およびオプトエレクトロニクス半導体部品 Withdrawn JP2013514641A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009058421A DE102009058421A1 (de) 2009-12-16 2009-12-16 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
DE102009058421.8 2009-12-16
PCT/EP2010/067705 WO2011082876A1 (de) 2009-12-16 2010-11-17 Verfahren zur herstellung eines gehäuses für ein optoelektronisches halbleiterbauteil, gehäuse und optoelektronisches halbleiterbauteil

Publications (2)

Publication Number Publication Date
JP2013514641A true JP2013514641A (ja) 2013-04-25
JP2013514641A5 JP2013514641A5 (enExample) 2013-12-12

Family

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Application Number Title Priority Date Filing Date
JP2012543566A Withdrawn JP2013514641A (ja) 2009-12-16 2010-11-17 オプトエレクトロニクス半導体部品のハウジングの製造方法、ハウジング、およびオプトエレクトロニクス半導体部品

Country Status (7)

Country Link
US (1) US9331255B2 (enExample)
EP (1) EP2513985A1 (enExample)
JP (1) JP2013514641A (enExample)
KR (1) KR20120106808A (enExample)
CN (1) CN102668144A (enExample)
DE (1) DE102009058421A1 (enExample)
WO (1) WO2011082876A1 (enExample)

Cited By (6)

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JP2016019001A (ja) * 2014-07-08 2016-02-01 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
JP2016019000A (ja) * 2014-07-08 2016-02-01 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
KR20170094859A (ko) * 2016-02-12 2017-08-22 엘지이노텍 주식회사 발광 소자 패키지 및 이를 포함하는 조명 장치
JPWO2016194120A1 (ja) * 2015-06-01 2017-08-24 三菱電機株式会社 発光装置、表示ユニット、及び映像表示装置
KR20170099557A (ko) * 2016-02-24 2017-09-01 엘지이노텍 주식회사 발광 소자 패키지 및 이를 포함하는 조명 장치
CN108633317A (zh) * 2016-02-12 2018-10-09 Lg 伊诺特有限公司 发光器件封装和包括该发光器件封装的照明设备

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USRE47444E1 (en) 2011-11-17 2019-06-18 Lumens Co., Ltd. Light emitting device package and backlight unit comprising the same
EP2783400B1 (en) * 2011-11-24 2020-01-08 Cree Huizhou Solid State Lighting Company Limited Water resistant led devices and led display including the same
TW201432949A (zh) * 2013-02-05 2014-08-16 隆達電子股份有限公司 發光模組及其製造方法
KR20140141227A (ko) * 2013-05-31 2014-12-10 제일모직주식회사 반사율 및 내변색성이 우수한 폴리아미드계 수지 조성물
US9293670B2 (en) * 2014-04-07 2016-03-22 Crystal Is, Inc. Ultraviolet light-emitting devices and methods
DE102014105839A1 (de) * 2014-04-25 2015-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
DE102016103059A1 (de) * 2016-02-22 2017-08-24 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102016105243A1 (de) 2016-03-21 2017-09-21 Infineon Technologies Ag Räumlich Selektives Aufrauen von Verkapselungsmasse, um eine Haftung mit einer Funktionsstruktur zu Fördern
JP7450466B2 (ja) * 2020-06-22 2024-03-15 スタンレー電気株式会社 発光装置及び発光装置の製造方法
CN112816071B (zh) * 2021-01-06 2021-12-28 国家卫星气象中心(国家空间天气监测预警中心) 一种基于云顶高度算法的红外通道辐射稳定性监测方法
WO2024235649A1 (en) * 2023-05-17 2024-11-21 Ams-Osram International Gmbh Optoelectronic semiconductor device and method for producing an optoelectronic semiconductor device

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US6578989B2 (en) * 2000-09-29 2003-06-17 Omron Corporation Optical device for an optical element and apparatus employing the device
JP2002374007A (ja) * 2001-06-15 2002-12-26 Toyoda Gosei Co Ltd 発光装置
JP4211359B2 (ja) * 2002-03-06 2009-01-21 日亜化学工業株式会社 半導体装置の製造方法
JP3912607B2 (ja) 2002-06-19 2007-05-09 サンケン電気株式会社 半導体発光装置の製法
TWI292961B (en) * 2002-09-05 2008-01-21 Nichia Corp Semiconductor device and an optical device using the semiconductor device
JP4603368B2 (ja) 2003-02-28 2010-12-22 オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング 構造化された金属被覆を施されたパッケージボディを有するオプトエレクトロニクス素子、この種の素子を製作する方法、およびプラスチックを含むボディに、構造化された金属被覆を施す方法
JP4182783B2 (ja) * 2003-03-14 2008-11-19 豊田合成株式会社 Ｌｅｄパッケージ
DE10323857A1 (de) * 2003-05-26 2005-01-27 Osram Opto Semiconductors Gmbh Gehäuse für ein Laserdiodenbauelement, Laserdiodenbauelement und Verfahren zum Herstellen eines Laserdiodenbauelements
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Publication number Priority date Publication date Assignee Title
JP2016019001A (ja) * 2014-07-08 2016-02-01 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
JP2016019000A (ja) * 2014-07-08 2016-02-01 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
JPWO2016194120A1 (ja) * 2015-06-01 2017-08-24 三菱電機株式会社 発光装置、表示ユニット、及び映像表示装置
US10256383B2 (en) 2015-06-01 2019-04-09 Mitsubishi Electric Corporation Light emitting device with dark area and greater reflectance light area, display unit, and image display device
KR20170094859A (ko) * 2016-02-12 2017-08-22 엘지이노텍 주식회사 발광 소자 패키지 및 이를 포함하는 조명 장치
CN108633317A (zh) * 2016-02-12 2018-10-09 Lg 伊诺特有限公司 发光器件封装和包括该发光器件封装的照明设备
JP2019505097A (ja) * 2016-02-12 2019-02-21 エルジー イノテック カンパニー リミテッド 発光素子パッケージ及びこれを含む照明装置
KR102562091B1 (ko) 2016-02-12 2023-08-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
KR20170099557A (ko) * 2016-02-24 2017-09-01 엘지이노텍 주식회사 발광 소자 패키지 및 이를 포함하는 조명 장치
KR102509312B1 (ko) * 2016-02-24 2023-03-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지

Also Published As

Publication number Publication date
US20120280116A1 (en) 2012-11-08
US9331255B2 (en) 2016-05-03
CN102668144A (zh) 2012-09-12
EP2513985A1 (de) 2012-10-24
DE102009058421A1 (de) 2011-06-22
WO2011082876A1 (de) 2011-07-14
KR20120106808A (ko) 2012-09-26

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