CN102668144A - 用于制造光电子半导体构件的壳体的方法、壳体和光电子半导体构件 - Google Patents

用于制造光电子半导体构件的壳体的方法、壳体和光电子半导体构件 Download PDF

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Publication number
CN102668144A
CN102668144A CN2010800577362A CN201080057736A CN102668144A CN 102668144 A CN102668144 A CN 102668144A CN 2010800577362 A CN2010800577362 A CN 2010800577362A CN 201080057736 A CN201080057736 A CN 201080057736A CN 102668144 A CN102668144 A CN 102668144A
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CN
China
Prior art keywords
housing
plastic material
reflector parts
reflector
reflector part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800577362A
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English (en)
Chinese (zh)
Inventor
格特鲁德·克劳特
贝恩德·巴克曼
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Ams Osram International GmbH
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Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of CN102668144A publication Critical patent/CN102668144A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71

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  • Led Device Packages (AREA)
  • Injection Moulding Of Plastics Or The Like (AREA)
CN2010800577362A 2009-12-16 2010-11-17 用于制造光电子半导体构件的壳体的方法、壳体和光电子半导体构件 Pending CN102668144A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009058421.8 2009-12-16
DE102009058421A DE102009058421A1 (de) 2009-12-16 2009-12-16 Verfahren zur Herstellung eines Gehäuses für ein optoelektronisches Halbleiterbauteil, Gehäuse und optoelektronisches Halbleiterbauteil
PCT/EP2010/067705 WO2011082876A1 (de) 2009-12-16 2010-11-17 Verfahren zur herstellung eines gehäuses für ein optoelektronisches halbleiterbauteil, gehäuse und optoelektronisches halbleiterbauteil

Publications (1)

Publication Number Publication Date
CN102668144A true CN102668144A (zh) 2012-09-12

Family

ID=43608617

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800577362A Pending CN102668144A (zh) 2009-12-16 2010-11-17 用于制造光电子半导体构件的壳体的方法、壳体和光电子半导体构件

Country Status (7)

Country Link
US (1) US9331255B2 (enExample)
EP (1) EP2513985A1 (enExample)
JP (1) JP2013514641A (enExample)
KR (1) KR20120106808A (enExample)
CN (1) CN102668144A (enExample)
DE (1) DE102009058421A1 (enExample)
WO (1) WO2011082876A1 (enExample)

Cited By (2)

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CN105261687A (zh) * 2014-07-08 2016-01-20 Lg伊诺特有限公司 发光器件封装
CN112816071A (zh) * 2021-01-06 2021-05-18 国家卫星气象中心(国家空间天气监测预警中心) 一种基于云顶高度算法的红外通道辐射稳定性监测方法

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CN104054189B (zh) * 2011-11-17 2018-06-26 株式会社流明斯 发光元件封装体以及包括该发光元件封装体的背光单元
WO2013075309A1 (en) * 2011-11-24 2013-05-30 Cree Huizhou Solid State Lighting Company Limited Water resistant led devices and led display including the same
TW201432949A (zh) * 2013-02-05 2014-08-16 隆達電子股份有限公司 發光模組及其製造方法
KR20140141227A (ko) * 2013-05-31 2014-12-10 제일모직주식회사 반사율 및 내변색성이 우수한 폴리아미드계 수지 조성물
EP3130011A4 (en) * 2014-04-07 2018-02-28 Crystal Is, Inc. Ultraviolet light-emitting devices and methods
DE102014105839A1 (de) * 2014-04-25 2015-10-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zur Herstellung eines optoelektronischen Bauelements
JP6671117B2 (ja) * 2014-07-08 2020-03-25 エルジー イノテック カンパニー リミテッド 発光素子パッケージ
WO2016194120A1 (ja) * 2015-06-01 2016-12-08 三菱電機株式会社 発光装置、表示ユニット、及び映像表示装置
KR102562091B1 (ko) * 2016-02-12 2023-08-02 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
CN108633317B (zh) * 2016-02-12 2021-07-09 Lg 伊诺特有限公司 发光器件封装和包括该发光器件封装的照明设备
KR102509312B1 (ko) * 2016-02-24 2023-03-17 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지
DE102016103059A1 (de) * 2016-02-22 2017-08-24 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102016105243A1 (de) * 2016-03-21 2017-09-21 Infineon Technologies Ag Räumlich Selektives Aufrauen von Verkapselungsmasse, um eine Haftung mit einer Funktionsstruktur zu Fördern
JP7450466B2 (ja) * 2020-06-22 2024-03-15 スタンレー電気株式会社 発光装置及び発光装置の製造方法
DE112024000872T5 (de) * 2023-05-17 2025-12-11 Ams-Osram International Gmbh Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements

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CN101150164A (zh) * 2006-09-22 2008-03-26 株式会社东芝 光半导体器件和光半导体器件的制造方法

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105261687A (zh) * 2014-07-08 2016-01-20 Lg伊诺特有限公司 发光器件封装
CN105261687B (zh) * 2014-07-08 2019-02-01 Lg伊诺特有限公司 发光器件封装
CN112816071A (zh) * 2021-01-06 2021-05-18 国家卫星气象中心(国家空间天气监测预警中心) 一种基于云顶高度算法的红外通道辐射稳定性监测方法

Also Published As

Publication number Publication date
WO2011082876A1 (de) 2011-07-14
DE102009058421A1 (de) 2011-06-22
JP2013514641A (ja) 2013-04-25
KR20120106808A (ko) 2012-09-26
US9331255B2 (en) 2016-05-03
US20120280116A1 (en) 2012-11-08
EP2513985A1 (de) 2012-10-24

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Application publication date: 20120912