KR20120101690A - 실리콘 기판을 처리하기 위한 방법 및 장치 - Google Patents

실리콘 기판을 처리하기 위한 방법 및 장치 Download PDF

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Publication number
KR20120101690A
KR20120101690A KR1020127016313A KR20127016313A KR20120101690A KR 20120101690 A KR20120101690 A KR 20120101690A KR 1020127016313 A KR1020127016313 A KR 1020127016313A KR 20127016313 A KR20127016313 A KR 20127016313A KR 20120101690 A KR20120101690 A KR 20120101690A
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KR
South Korea
Prior art keywords
etching solution
wetting
silicon
silicon substrates
additive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
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KR1020127016313A
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English (en)
Korean (ko)
Inventor
디르크 하베르만
마르틴 쇼흐
마허 이짜리예네
프리드헬름 슈타인
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게부르. 쉬미트 게엠베하
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Publication of KR20120101690A publication Critical patent/KR20120101690A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
KR1020127016313A 2009-12-23 2010-12-23 실리콘 기판을 처리하기 위한 방법 및 장치 Ceased KR20120101690A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102009060931.8 2009-12-23
DE102009060931A DE102009060931A1 (de) 2009-12-23 2009-12-23 Verfahren und Vorrichtung zur Behandlung von Siliziumsubstraten

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020187010026A Division KR102012893B1 (ko) 2009-12-23 2010-12-23 실리콘 기판을 처리하기 위한 방법 및 장치

Publications (1)

Publication Number Publication Date
KR20120101690A true KR20120101690A (ko) 2012-09-14

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ID=43531161

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020127016313A Ceased KR20120101690A (ko) 2009-12-23 2010-12-23 실리콘 기판을 처리하기 위한 방법 및 장치
KR1020187010026A Active KR102012893B1 (ko) 2009-12-23 2010-12-23 실리콘 기판을 처리하기 위한 방법 및 장치

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020187010026A Active KR102012893B1 (ko) 2009-12-23 2010-12-23 실리콘 기판을 처리하기 위한 방법 및 장치

Country Status (11)

Country Link
US (1) US20120276749A1 (https=)
EP (1) EP2517226B1 (https=)
JP (1) JP5801821B2 (https=)
KR (2) KR20120101690A (https=)
CN (1) CN102696092B (https=)
AU (1) AU2010334764A1 (https=)
CA (1) CA2783211A1 (https=)
DE (1) DE102009060931A1 (https=)
MY (1) MY164303A (https=)
TW (1) TWI544537B (https=)
WO (1) WO2011076920A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011081980B4 (de) * 2011-09-01 2023-07-06 Gebr. Schmid Gmbh & Co. Vorrichtung zum Benetzen von flachen Substraten und Anlage mit einer solchen Vorrichtung
DE102012107537A1 (de) * 2012-08-16 2014-05-22 Hanwha Q Cells Gmbh Verfahren zur Oberflächenbehandlung eines monokristallinen Halbleiterwafers und Verfahren zur Herstellung einer monokristallinen Halbleiterwafer-Solarzelle
DE102013218693A1 (de) 2013-09-18 2015-03-19 lP RENA GmbH Vorrichtung und Verfahren zur asymmetrischen alkalischen Textur von Oberflächen
AT515147B1 (de) * 2013-12-09 2016-10-15 4Tex Gmbh Verfahren und Vorrichtung zum Behandeln von Gegenständen mit einer Flüssigkeit
CN104091774A (zh) * 2014-07-17 2014-10-08 上海华力微电子有限公司 一种用于湿法单片机的清洗装置
DE102014110222B4 (de) * 2014-07-21 2016-06-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Strukturierung von Ober- und Unterseite eines Halbleitersubstrats
DE102014013591A1 (de) 2014-09-13 2016-03-17 Jörg Acker Verfahren zur Herstellung von Siliciumoberflächen mit niedriger Reflektivität
TWI618261B (zh) * 2016-12-07 2018-03-11 財團法人金屬工業研究發展中心 製造金字塔結構的蝕刻劑及蝕刻方法
DE102017203977A1 (de) * 2017-03-10 2018-09-13 Gebr. Schmid Gmbh Verfahren zur Herstellung texturierter Wafer und Aufrausprühstrahlbehandlungsvorrichtung
CN107993919A (zh) * 2017-11-21 2018-05-04 长江存储科技有限责任公司 用于晶圆清洗的化学液喷淋管及清洗装置
DE102018206980A1 (de) 2018-01-26 2019-08-01 Singulus Technologies Ag Verfahren und Vorrichtung zur Reinigung von geätzten Oberflächen eines Halbleitersubstrats
DE102018206978A1 (de) 2018-01-26 2019-08-01 Singulus Technologies Ag Verfahren und Vorrichtung zur Behandlung von geätzten Oberflächen eines Halbleitersubstrats unter Verwendung von ozonhaltigem Medium
DE202018005266U1 (de) 2018-11-14 2019-03-22 H2GEMINI Technology Consulting GmbH Vorrichtung zur Ätzung von Silizium Substraten
AT16977U3 (de) * 2020-02-20 2021-03-15 4Tex Gmbh Verfahren zum Behandeln von Substraten mit Chemikalien
CN114686988A (zh) * 2022-03-30 2022-07-01 徐州中辉光伏科技有限公司 一种单晶硅片制绒设备

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3539874A1 (de) * 1985-11-11 1987-05-14 Hoellmueller Maschbau H Anlage zum aetzen von zumindest teilweise aus metall, vorzugsweise kupfer, bestehendem aetzgut
JP3271990B2 (ja) * 1997-03-21 2002-04-08 三洋電機株式会社 光起電力素子及びその製造方法
DE19811878C2 (de) * 1998-03-18 2002-09-19 Siemens Solar Gmbh Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen
JP3719632B2 (ja) * 1998-12-17 2005-11-24 三菱電機株式会社 シリコン太陽電池の製造方法
JP3653416B2 (ja) * 1999-05-19 2005-05-25 沖電気工業株式会社 エッチング方法およびエッチング装置
JP3948890B2 (ja) * 2000-08-09 2007-07-25 三洋電機株式会社 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法
US7250114B2 (en) * 2003-05-30 2007-07-31 Lam Research Corporation Methods of finishing quartz glass surfaces and components made by the methods
JP3740138B2 (ja) * 2003-06-25 2006-02-01 直江津電子工業株式会社 テクスチャー形成用エッチング液
DE102004017680B4 (de) * 2004-04-10 2008-01-24 Forschungszentrum Jülich GmbH Verfahren zur Behandlung von Substraten mit vorstrukturierten Zinkoxidschichten
CN1983644A (zh) * 2005-12-13 2007-06-20 上海太阳能科技有限公司 制作单晶硅太阳电池绒面的方法
DE102005062528A1 (de) 2005-12-16 2007-06-21 Gebr. Schmid Gmbh & Co. Vorrichtung und Verfahren zur Oberflächenbehandlung von Substraten
WO2007129555A1 (ja) * 2006-05-02 2007-11-15 Mimasu Semiconductor Industry Co., Ltd. 半導体基板の製造方法、ソーラー用半導体基板及びエッチング液
JP2008013389A (ja) * 2006-07-04 2008-01-24 Nec Corp エッチング装置及び薄型ガラス基板の製造方法
EP1890338B1 (de) * 2006-08-19 2011-06-22 Universität Konstanz Verfahren zum Texturieren von Siliziumwafern zur Herstellung von Solarzellen
EP1936698A1 (en) * 2006-12-18 2008-06-25 BP Solar Espana, S.A. Unipersonal Process for manufacturing photovoltaic cells
JP4975430B2 (ja) * 2006-12-28 2012-07-11 関東化学株式会社 異方性エッチング液およびそれを用いたエッチング方法
DE102007026081A1 (de) * 2007-05-25 2008-11-27 Gebr. Schmid Gmbh & Co. Verfahren zur Behandlung von Siliziumwafern, Behandlungsflüssigkeit und Siliziumwafer
DE102007063202A1 (de) * 2007-12-19 2009-06-25 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung von Silizium-Wafern
JP5302551B2 (ja) * 2008-02-28 2013-10-02 林純薬工業株式会社 シリコン異方性エッチング液組成物
JP2009206393A (ja) * 2008-02-29 2009-09-10 Seiko Epson Corp 表面処理装置、表面処理方法
CN102017176A (zh) * 2008-03-25 2011-04-13 应用材料股份有限公司 结晶太阳能电池的表面清洁与纹理化工艺
DE102008022282A1 (de) 2008-04-24 2009-10-29 Gebr. Schmid Gmbh & Co. Einrichtung und Verfahren zur Behandlung von Silizium-Wafern oder flachen Gegenständen

Also Published As

Publication number Publication date
WO2011076920A1 (de) 2011-06-30
CA2783211A1 (en) 2011-06-30
AU2010334764A1 (en) 2012-06-21
EP2517226A1 (de) 2012-10-31
JP5801821B2 (ja) 2015-10-28
TWI544537B (zh) 2016-08-01
TW201133604A (en) 2011-10-01
US20120276749A1 (en) 2012-11-01
EP2517226B1 (de) 2021-06-09
CN102696092B (zh) 2017-05-31
KR102012893B1 (ko) 2019-08-21
JP2013516059A (ja) 2013-05-09
DE102009060931A1 (de) 2011-06-30
CN102696092A (zh) 2012-09-26
KR20180038589A (ko) 2018-04-16
MY164303A (en) 2017-12-15

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