CN102696092B - 用于处理硅基底的方法和装置 - Google Patents

用于处理硅基底的方法和装置 Download PDF

Info

Publication number
CN102696092B
CN102696092B CN201080058796.6A CN201080058796A CN102696092B CN 102696092 B CN102696092 B CN 102696092B CN 201080058796 A CN201080058796 A CN 201080058796A CN 102696092 B CN102696092 B CN 102696092B
Authority
CN
China
Prior art keywords
etching solution
silicon substrate
additive
etching
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201080058796.6A
Other languages
English (en)
Chinese (zh)
Other versions
CN102696092A (zh
Inventor
D.哈伯曼
M.肖赫
M.伊萨尔耶内
F.施泰因
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Gebrueder Schmid GmbH and Co
Original Assignee
Gebrueder Schmid GmbH and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gebrueder Schmid GmbH and Co filed Critical Gebrueder Schmid GmbH and Co
Publication of CN102696092A publication Critical patent/CN102696092A/zh
Application granted granted Critical
Publication of CN102696092B publication Critical patent/CN102696092B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0422—Apparatus for fluid treatment for etching for wet etching
    • H10P72/0424—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/126—Preparing bulk and homogeneous wafers by chemical etching

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Weting (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
CN201080058796.6A 2009-12-23 2010-12-23 用于处理硅基底的方法和装置 Active CN102696092B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102009060931.8 2009-12-23
DE102009060931A DE102009060931A1 (de) 2009-12-23 2009-12-23 Verfahren und Vorrichtung zur Behandlung von Siliziumsubstraten
PCT/EP2010/070651 WO2011076920A1 (de) 2009-12-23 2010-12-23 Verfahren und vorrichtung zur behandlung von siliziumsubstraten

Publications (2)

Publication Number Publication Date
CN102696092A CN102696092A (zh) 2012-09-26
CN102696092B true CN102696092B (zh) 2017-05-31

Family

ID=43531161

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080058796.6A Active CN102696092B (zh) 2009-12-23 2010-12-23 用于处理硅基底的方法和装置

Country Status (11)

Country Link
US (1) US20120276749A1 (https=)
EP (1) EP2517226B1 (https=)
JP (1) JP5801821B2 (https=)
KR (2) KR20120101690A (https=)
CN (1) CN102696092B (https=)
AU (1) AU2010334764A1 (https=)
CA (1) CA2783211A1 (https=)
DE (1) DE102009060931A1 (https=)
MY (1) MY164303A (https=)
TW (1) TWI544537B (https=)
WO (1) WO2011076920A1 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011081980B4 (de) * 2011-09-01 2023-07-06 Gebr. Schmid Gmbh & Co. Vorrichtung zum Benetzen von flachen Substraten und Anlage mit einer solchen Vorrichtung
DE102012107537A1 (de) * 2012-08-16 2014-05-22 Hanwha Q Cells Gmbh Verfahren zur Oberflächenbehandlung eines monokristallinen Halbleiterwafers und Verfahren zur Herstellung einer monokristallinen Halbleiterwafer-Solarzelle
DE102013218693A1 (de) 2013-09-18 2015-03-19 lP RENA GmbH Vorrichtung und Verfahren zur asymmetrischen alkalischen Textur von Oberflächen
AT515147B1 (de) * 2013-12-09 2016-10-15 4Tex Gmbh Verfahren und Vorrichtung zum Behandeln von Gegenständen mit einer Flüssigkeit
CN104091774A (zh) * 2014-07-17 2014-10-08 上海华力微电子有限公司 一种用于湿法单片机的清洗装置
DE102014110222B4 (de) * 2014-07-21 2016-06-23 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren und Vorrichtung zur Strukturierung von Ober- und Unterseite eines Halbleitersubstrats
DE102014013591A1 (de) 2014-09-13 2016-03-17 Jörg Acker Verfahren zur Herstellung von Siliciumoberflächen mit niedriger Reflektivität
TWI618261B (zh) * 2016-12-07 2018-03-11 財團法人金屬工業研究發展中心 製造金字塔結構的蝕刻劑及蝕刻方法
DE102017203977A1 (de) * 2017-03-10 2018-09-13 Gebr. Schmid Gmbh Verfahren zur Herstellung texturierter Wafer und Aufrausprühstrahlbehandlungsvorrichtung
CN107993919A (zh) * 2017-11-21 2018-05-04 长江存储科技有限责任公司 用于晶圆清洗的化学液喷淋管及清洗装置
DE102018206980A1 (de) 2018-01-26 2019-08-01 Singulus Technologies Ag Verfahren und Vorrichtung zur Reinigung von geätzten Oberflächen eines Halbleitersubstrats
DE102018206978A1 (de) 2018-01-26 2019-08-01 Singulus Technologies Ag Verfahren und Vorrichtung zur Behandlung von geätzten Oberflächen eines Halbleitersubstrats unter Verwendung von ozonhaltigem Medium
DE202018005266U1 (de) 2018-11-14 2019-03-22 H2GEMINI Technology Consulting GmbH Vorrichtung zur Ätzung von Silizium Substraten
AT16977U3 (de) * 2020-02-20 2021-03-15 4Tex Gmbh Verfahren zum Behandeln von Substraten mit Chemikalien
CN114686988A (zh) * 2022-03-30 2022-07-01 徐州中辉光伏科技有限公司 一种单晶硅片制绒设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080044956A1 (en) * 2006-07-04 2008-02-21 Nec Corporation Apparatus for etching substrate and method of fabricating thin-glass substrate
TW200913045A (en) * 2007-05-25 2009-03-16 Schmid Gmbh & Amp Co Geb Method for the treatment of silicon wafers, treatment liquid and silicon wafer

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3539874A1 (de) * 1985-11-11 1987-05-14 Hoellmueller Maschbau H Anlage zum aetzen von zumindest teilweise aus metall, vorzugsweise kupfer, bestehendem aetzgut
JP3271990B2 (ja) * 1997-03-21 2002-04-08 三洋電機株式会社 光起電力素子及びその製造方法
DE19811878C2 (de) * 1998-03-18 2002-09-19 Siemens Solar Gmbh Verfahren und Ätzlösung zum naßchemischen pyramidalen Texturätzen von Siliziumoberflächen
JP3719632B2 (ja) * 1998-12-17 2005-11-24 三菱電機株式会社 シリコン太陽電池の製造方法
JP3653416B2 (ja) * 1999-05-19 2005-05-25 沖電気工業株式会社 エッチング方法およびエッチング装置
JP3948890B2 (ja) * 2000-08-09 2007-07-25 三洋電機株式会社 凹凸基板の製造方法、凹凸構造形成用界面活性剤並びに光起電力素子の製造方法
US7250114B2 (en) * 2003-05-30 2007-07-31 Lam Research Corporation Methods of finishing quartz glass surfaces and components made by the methods
JP3740138B2 (ja) * 2003-06-25 2006-02-01 直江津電子工業株式会社 テクスチャー形成用エッチング液
DE102004017680B4 (de) * 2004-04-10 2008-01-24 Forschungszentrum Jülich GmbH Verfahren zur Behandlung von Substraten mit vorstrukturierten Zinkoxidschichten
CN1983644A (zh) * 2005-12-13 2007-06-20 上海太阳能科技有限公司 制作单晶硅太阳电池绒面的方法
DE102005062528A1 (de) 2005-12-16 2007-06-21 Gebr. Schmid Gmbh & Co. Vorrichtung und Verfahren zur Oberflächenbehandlung von Substraten
WO2007129555A1 (ja) * 2006-05-02 2007-11-15 Mimasu Semiconductor Industry Co., Ltd. 半導体基板の製造方法、ソーラー用半導体基板及びエッチング液
EP1890338B1 (de) * 2006-08-19 2011-06-22 Universität Konstanz Verfahren zum Texturieren von Siliziumwafern zur Herstellung von Solarzellen
EP1936698A1 (en) * 2006-12-18 2008-06-25 BP Solar Espana, S.A. Unipersonal Process for manufacturing photovoltaic cells
JP4975430B2 (ja) * 2006-12-28 2012-07-11 関東化学株式会社 異方性エッチング液およびそれを用いたエッチング方法
DE102007063202A1 (de) * 2007-12-19 2009-06-25 Gebr. Schmid Gmbh & Co. Verfahren und Vorrichtung zur Behandlung von Silizium-Wafern
JP5302551B2 (ja) * 2008-02-28 2013-10-02 林純薬工業株式会社 シリコン異方性エッチング液組成物
JP2009206393A (ja) * 2008-02-29 2009-09-10 Seiko Epson Corp 表面処理装置、表面処理方法
CN102017176A (zh) * 2008-03-25 2011-04-13 应用材料股份有限公司 结晶太阳能电池的表面清洁与纹理化工艺
DE102008022282A1 (de) 2008-04-24 2009-10-29 Gebr. Schmid Gmbh & Co. Einrichtung und Verfahren zur Behandlung von Silizium-Wafern oder flachen Gegenständen

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080044956A1 (en) * 2006-07-04 2008-02-21 Nec Corporation Apparatus for etching substrate and method of fabricating thin-glass substrate
TW200913045A (en) * 2007-05-25 2009-03-16 Schmid Gmbh & Amp Co Geb Method for the treatment of silicon wafers, treatment liquid and silicon wafer

Also Published As

Publication number Publication date
WO2011076920A1 (de) 2011-06-30
CA2783211A1 (en) 2011-06-30
AU2010334764A1 (en) 2012-06-21
EP2517226A1 (de) 2012-10-31
KR20120101690A (ko) 2012-09-14
JP5801821B2 (ja) 2015-10-28
TWI544537B (zh) 2016-08-01
TW201133604A (en) 2011-10-01
US20120276749A1 (en) 2012-11-01
EP2517226B1 (de) 2021-06-09
KR102012893B1 (ko) 2019-08-21
JP2013516059A (ja) 2013-05-09
DE102009060931A1 (de) 2011-06-30
CN102696092A (zh) 2012-09-26
KR20180038589A (ko) 2018-04-16
MY164303A (en) 2017-12-15

Similar Documents

Publication Publication Date Title
CN102696092B (zh) 用于处理硅基底的方法和装置
JP5243550B2 (ja) シリコンウエハを処理するための方法及びデバイス
US20080311298A1 (en) Device, System and Method for Treating the Surfaces of Substrates
CN102754198B (zh) 用于处理基片的基片表面的方法和装置
KR101352855B1 (ko) 기판의 표면을 처리하기 위한 장치 및 방법
JP2013516059A5 (https=)
CN101313384A (zh) 用于在连续过程中湿法化学处理薄平面衬底的方法和装置
CN103646868B (zh) 水热-蒸汽刻蚀法制备多孔硅的方法
JP6714592B2 (ja) サブストレートの下側処理の方法および装置
US20080295863A1 (en) Method and device for processing or treating silicon material
CN115053356A (zh) 用于选择性地去除硅衬底的单侧发射极层的方法和湿法工作台
CN108292616A (zh) 对半导体基底进行化学处理的设备和方法
CN103811583A (zh) 一种硅片制绒方法及硅片制绒装置
CN217094114U (zh) 一种链式双面沉积设备
WO2008060148A2 (en) Atomizer for atomizing a doping solution and a method for treating a substrate
CN108033444A (zh) 石墨烯薄膜在转移中的化学除杂方法及其设备
TW201534755A (zh) 基於薄板的化學浴沉積設備
CN121419371A (zh) 晶硅底电池单面刻蚀装置及方法、叠层电池的制备方法
JP2007227796A (ja) 基板の枚葉処理装置および処理方法
KR20120013139A (ko) 분사 흡입기 모듈과 이를 이용하는 실리콘 기판 텍스쳐링 장치 및 방법
CN106460174A (zh) 化学浴沉积系统和方法
CN102404937A (zh) 湿处理装置及湿处理方法
TWM498958U (zh) 膠體蝕刻漿料增濕裝置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant