CN101313384A - 用于在连续过程中湿法化学处理薄平面衬底的方法和装置 - Google Patents
用于在连续过程中湿法化学处理薄平面衬底的方法和装置 Download PDFInfo
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Abstract
本发明涉及一种用于在连续过程中对薄平面的且易断裂的衬底进行湿法化学处理(清洗、蚀刻、剥离、涂层、脱水)的方法和装置,其中衬底运输以及湿处理通过吸收介质的辊子进行。
Description
技术领域
本发明涉及一种用于湿法化学处理微电子、精密机械和光学使用的平面薄的且易断裂衬底的方法和装置,其中在制造微电子元件、太阳能电池等时,使用连续过程(在线)中的湿法化学处理如清洗、蚀刻、剥离、涂层和干燥。
背景技术
制造微电子元件时的湿法处理技术目前主要在处理槽内进行,其中将安放在料箱内的衬底浸入处理槽内。1至50个衬底的处理过程间断地进行。例如在太阳能电池生产中,连续(在线)湿法处理设备的使用日益增加,其中衬底在辊子或者传送带上连续送入处理槽内,或在喷淋单元中利用介质例如像处理化学试剂或者水喷淋,然后利用热风或者氮,需要时增加异丙醇进行干燥。目前可供使用的湿法化学处理过程局限于主要为半导体工业的标准衬底开发和优化的浸渍过程和喷淋过程上。在现代化的微电子技术和薄膜技术方面,未来将使用例如衬底厚度小于100μm的越来越薄的衬底。这种几乎薄膜式、非常易于断裂的衬底不能在料箱和浸渍槽内进行处理,因为一方面不能满足对运输稳定性的要求,另一方面也不能满足生产率标准。也达不到如单面处理的处理要求。虽然用于在连续过程中同时处理大量这种衬底的现有在线处理设备满足产量标准,但具有不可接受的断裂率并不能用于所需的所有类型的处理过程。
发明内容
下面介绍的方法和装置通过使用微孔可压缩辊,无论是在处理线内部的运输(装卸运输)方面,还是在任何所需用途的扩展处理过程方面,均满足易断裂的薄衬底在线处理设备的所有要求。通过使用这种辊避免与输送方向垂直的力,同时这些辊允许利用处理介质在衬底的两面或者仅在衬底的正面或者背面均匀浸湿衬底。由此在处理过程中,通过利用处理介质连续交替作用无论是化学方法,还是通过直接清洗接触的物理方法均发挥作用。此外,洗涤和干燥步骤可以结合到相同的方法中。
在本方法中,所要处理的衬底在连续过程中通过设置在单面或者双面且与介质相容的旋转海绵辊。通过在至少一侧耦联传动装置实现绝对均匀的运动。所希望的处理过程所要求的介质(液态或者气态)在通过时直接或者间接涂覆,并且在洗涤和干燥步骤中重新去除。根据实施方式,处理过程可以在衬底上单面或者双面进行,多个(利用相同或者不同的介质)处理步骤可以通过处理单元的连续排列组合在一条处理线上。该处理线可以是一条或者多条。该方法可以以浸湿的衬底或者干燥的衬底结束。
具体实施方式
下面介绍不同的实施方式和附图:
所要处理的衬底1(图1)被水平输送到处理单元2A。通过衬底在辊子3或传送带或者皮带上,或者通过可替代的装卸搬运系统(例如机器人)运输到处理单元2A的辊子4和5的方式,进行输送。
只要衬底被多孔可压缩的辊子4和5咬住,衬底就通过处理单元2A相同类型的后续辊子继续输送。辊子的特征在于,它们吸收处理单元2A中所使用的、来自浸渍槽6或者喷淋装置7或者直接通过辊子8的芯输送的处理介质,并在衬底运输时由于辊子9和10(图2)与衬底11的表面接触,辊子将处理介质转移到衬底表面上。此外通过输送处理介质的辊子在衬底表面上的滚动,产生支持过程变化的摩擦效应,该摩擦效应在清洗、蚀刻、剥离、洗涤时强化处理过程。
在一种也能与上述方法相组合的可替代的方法中,辊子12和13(图3)的间距设计为,使得在辊子12与13之间通过喷嘴14附加输送处理介质。喷嘴此外可以构成为超声波或者兆声波喷嘴。
下部辊15和16的浸湿能够有选择地通过从槽17直接吸收处理介质或者与上部辊的上述结构相应通过喷嘴进行,此外也可以通过处理介质的超声波激发装置或者兆声波激发装置18支持。介质向辊子19(图4)的输送也可以通过辊芯20进行,其中辊芯设有用于介质排放的孔21。通过辊子的微孔结构,辊体或辊子表面并在上述装置内的处理介质到达所要处理的衬底表面。
依据衬底类型和所要求的处理过程,既能够设计辊子相对于衬底(图6)的垂直间距23,也能够设计辊子彼此间的水平间距22并且根据处理要求和衬底类型设计辊子数量24。辊子对衬底的压紧力同样可以根据所要求的处理过程和衬底类型,通过固定调整、重力(上部辊对下部辊的压力)或者通过调整驱动装置(气动、电动或者液压)进行。
辊子旋转通过电动传动进行,其中可以连续地调整辊子回转并从而连续地调整衬底运输。
替代地其中辊子沿对向旋转方向的处理过程——例如在清洗过程中——是可以的(图5),因为进行衬底运输的辊子25、26、27和28相对于衬底的辊子压紧力相应地大于与辊子25、26、27和28的转向相反或与衬底的运输方向相反旋转的辊子29和30的辊子压紧力,由此产生附加的清洗效果。运输和处理过程同样可以通过使用不同辊径(图7)31、32、33和34的辊子,只要辊子的组合适合于处理过程的进行(参见图7)。此外,每个辊子的转速可以单独地调整并在与辊子压紧力和辊子转向的组合下与每个辊子相关联,以便在各个处理时实现相应的处理过程。
用于进行不同的连续的处理过程例如蚀刻、洗涤、干燥等,处理单元可以连续地设置在一条处理线2A、2B、2C(参见图1)中并通过具有用于连续运输衬底缝隙的隔板互相隔开不同的处理介质。处理介质的彼此隔开也可以仅通过辊子和相应的处理介质输送进行,其中在处理单元内的最后的辊子被供应减少的介质体积。
衬底表面的干燥——例如在喷淋处理之后的干燥——同样主要地通过微孔的辊子进行。但不向这些辊子输送处理介质。由于干燥的辊子在衬底表面上的滚动,所以表面的液体被辊子吸收(参见图8)。被吸收的液体通过用于干燥的辊子38和39的附加除液刮板或滚压辊36和37(图8)连续排出,并由此这些辊子为在处理过程中继续吸收水分进行准备。由辊子从衬底表面吸收的液体同样可以以如下的方式进行去除,即所吸收的液体通过有孔的辊芯20(图4)由真空从辊子抽走。
在第二实施方式中,在通过辊子在衬底表面上的滚动吸收液体之后的表面干燥以如下方式进行,即在最后辊子后面的衬底表面利用气体吹风,该气体此外可以被加热,例如加热的氮或者热空气加热以及通过衬底加热——例如红外线辐射或者加热棒或所述方法的组合。
在另一种可替代的实施方式中,衬底无残留的表面干燥可以通过将气体-蒸汽混合气体导入衬底表面上的液体内进行,其中蒸汽可与液体混合并混合导致在衬底表面与辊子表面之间分界面上液体的表面张力比无添加蒸汽的液体的表面张力更小。这种作为马兰戈尼(Marangoni)效应或者表面张力梯度干燥公知的方法可以应用于本发明,如图9所示。由于辊子40或41的滚动,此前从湿衬底表面在辊子滚动时吸收的液体或者依据前述可能性向辊子附加输送的液体导致辊子与衬底表面之间形成弯液面。从喷嘴45或46将气体-蒸汽混合气体朝弯液面方向传导经过导流的出口47或48。通过蒸汽在弯液面内的渗透,产生混合并因此也相对于在弯液面外的液体降低了表面张力。产生一种朝具有在弯液面外的更高表面张力的液体区域方向的力(马兰戈尼力),由此使得衬底干燥。这种干燥主要是无颗粒和残留。
平面衬底的单面表面处理可以以如下方式进行,即衬底49(图10)在运输辊50上输送到处理辊51,处理辊被供给处理介质52并在衬底上滚动时将处理介质53转移到衬底表面上。通过运输辊50的相应设置,可以防止运输辊与处理辊51接触。
单面表面处理的另一种可能性可以以如下方式进行,即衬底54(图11)所要处理的表面通过辊子55运输,这些辊子浸入处理介质内并在辊子运输衬底旋转时将该介质56转移到衬底底面上。如果该衬底57(图12)此外通过压紧辊59(图13)压向软辊58,那么衬底边缘也可以利用处理介质进行处理。
Claims (36)
1.一种用于在连续过程中对薄平面的且易断裂的衬底进行湿法化学处理、特别是清洗、蚀刻、剥离、涂层、脱水的方法,其特征在于,衬底运输以及处理过程通过吸收处理介质的辊子进行。
2.如权利要求1所述的方法,其特征在于,吸收在辊子中的处理介质在衬底运输时转移到衬底表面上。
3.如权利要求1或2所述的方法,其特征在于,当辊子在衬底表面上滚动时向辊子输送处理介质。
4.如前述权利要求中任一项所述的方法,其特征在于,湿法化学处理仅在衬底的一面上或者两面上进行。
5.如前述权利要求中任一项所述的方法,其特征在于,湿法化学处理包括干燥步骤。
6.如前述权利要求中任一项所述的方法,其特征在于,湿法化学处理在可任意组合的多个处理步骤中进行。
7.一种用于在连续过程中对薄平面的且易断裂的衬底进行湿法化学处理、特别是清洗、蚀刻、剥离、涂层、脱水的装置,其特征在于,设有吸收处理介质的辊子,借助于所述辊子进行衬底运输以及处理过程。
8.如权利要求7所述的装置,其特征在于,辊子构成为使得吸收在辊子中的处理介质在衬底运输时转移到衬底表面上。
9.如权利要求7或8所述的装置,其特征在于,处理介质的输送在辊子在衬底表面上滚动时进行。
10.如权利要求7至9中任一项所述的装置,其特征在于,湿法化学处理仅在衬底的一面上或者两面上进行。
11.如权利要求7至10中任一项所述的装置,其特征在于,辊子具有微孔的设计,从而介质输送通过处理介质导入微孔的辊子内进行。
12.如权利要求7至11中任一项所述的装置,其特征在于,设有介质处理槽,从而辊子的介质吸收通过辊子浸入介质处理槽内进行。
13.如权利要求7至12中任一项所述的装置,其特征在于,设有喷淋装置,从而介质向辊子的输送通过向辊子上喷淋和/或通过在辊子之间配给处理介质进行。
14.如权利要求7至13中任一项所述的装置,其特征在于,为了建立处理线设有任意数量的辊子。
15.如权利要求7至15中任一项所述的装置,其特征在于,辊子的间距和/或长度能够根据衬底尺寸自由选择。
16.如权利要求7至15中任一项所述的装置,其特征在于,上下重叠设置的辊子的位置是任意的。
17.如权利要求7至16中任一项所述的装置,其特征在于,上部与下部辊子的间距是可调整的。
18.如权利要求7至17中任一项所述的装置,其特征在于,辊子在衬底上的压紧力是不同的和/或可调整的。
19.如权利要求7至18中任一项所述的装置,其特征在于,辊子断面具有不同的表面并特别是光滑的,或者具有粒结、纵槽和/或横槽。
20.如权利要求7至19中任一项所述的装置,其特征在于,每个辊子的转速能单独地调整。
21.如权利要求7至20中任一项所述的装置,其特征在于,每个辊子的转向(旋转方向)能选择为不同的。
22.如权利要求7至21中任一项所述的装置,其特征在于,除了辊子外其他支持处理的系统、特别是超声波系统或者兆声波系统与处理单元一体化。
23.如权利要求7至22中任一项所述的装置,其特征在于,干燥通过运行的干燥辊子进行,其中由辊子吸收的液体被刮掉。
24.如权利要求7至23中任一项所述的装置,其特征在于,辊子吸收的液体能通过从辊子抽走而除去。
25.如权利要求7至24中任一项所述的装置,其特征在于,为了干燥衬底设有支持处理的装置和/或方法,如衬底利用加热的气体吹风、局部降低表面张力或者例如通过红外线辐射进行衬底加热。
26.如权利要求7至25中任一项所述的装置,其特征在于,气态介质能通过辊芯(20)导入辊子内。
27.如权利要求7至26中任一项所述的装置,其特征在于,沿辊子与衬底的接触面能导入特别是含氮的气流,其包括特别是含有异丙醇的蒸汽,蒸汽与衬底表面上的液体进行混合并且混合物的表面张力低于混合前液体的表面张力。
28.如权利要求7至27中任一项所述的装置,其特征在于,所有使用的处理介质均能被加热。
29.如权利要求7至28中任一项所述的装置,其特征在于,输送到各个辊子的介质能通过辊子在衬底上的滚动而沉积。
30.如权利要求7至29中任一项所述的装置,其特征在于,衬底正面和衬底底面上的浸润或者涂层是不同的。
31.如权利要求7至30中任一项所述的装置,其特征在于,多个衬底能并排同时处理。
32.如权利要求7至31中任一项所述的装置,其特征在于,多个处理室串联地设置以形成处理线,以便能先后进行蚀刻处理、洗涤处理、干燥处理等。
33.如权利要求7至32中任一项所述的装置,其特征在于,多个处理线构成为上下重叠。
34.如权利要求7至33中任一项所述的装置,其特征在于,所述处理介质通过衬底上面的辊子仅输送到衬底上面。
35.如权利要求1至34中任一项所述的装置,其特征在于,所述处理介质仅通过衬底下面的辊子输送到一个衬底面。
36.如权利要求1至35中任一项所述的装置,其特征在于,所述处理介质仅输送到一个衬底面和衬底边缘。
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DE102005057109.3 | 2005-11-26 | ||
DE102005057109A DE102005057109A1 (de) | 2005-11-26 | 2005-11-26 | Vorrichtung und Verfahren für mechanisches Prozessieren flacher, dünner Substrate im Durchlaufverfahren |
PCT/EP2006/011166 WO2007059925A1 (de) | 2005-11-26 | 2006-11-22 | Vorrichtung und verfahren für nasschemisches prozessieren flacher, dünner substrate im durchlaufverfahren |
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EP (1) | EP1952427B2 (zh) |
JP (1) | JP4939545B2 (zh) |
KR (1) | KR101371818B1 (zh) |
CN (1) | CN101313384B (zh) |
AT (1) | ATE532207T1 (zh) |
CA (1) | CA2630885C (zh) |
DE (1) | DE102005057109A1 (zh) |
PL (1) | PL1952427T5 (zh) |
WO (1) | WO2007059925A1 (zh) |
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CN113996576A (zh) * | 2021-10-29 | 2022-02-01 | 浙江海丰生物科技股份有限公司 | 一种切叶束正反面分段式连续自动清洗方法 |
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Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102007054092B4 (de) * | 2007-11-13 | 2009-08-06 | Rena Sondermaschinen Gmbh | Vorrichtung und Verfahren zum Transport von empfindlichem Gut |
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US10493483B2 (en) | 2017-07-17 | 2019-12-03 | Palo Alto Research Center Incorporated | Central fed roller for filament extension atomizer |
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US10464094B2 (en) | 2017-07-31 | 2019-11-05 | Palo Alto Research Center Incorporated | Pressure induced surface wetting for enhanced spreading and controlled filament size |
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Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
BE614793A (zh) * | 1961-03-08 | |||
JPS63234536A (ja) | 1987-03-24 | 1988-09-29 | Nec Kyushu Ltd | 半導体基板洗浄装置 |
US5007968A (en) * | 1989-07-28 | 1991-04-16 | Chemcut Corporation | Process and apparatus for treating articles of substantial thickness |
US5364225A (en) * | 1992-06-19 | 1994-11-15 | Ibm | Method of printed circuit panel manufacture |
JPH06196457A (ja) * | 1992-12-24 | 1994-07-15 | Daido Steel Co Ltd | 成膜用基盤の洗浄装置 |
US5723019A (en) * | 1994-07-15 | 1998-03-03 | Ontrak Systems, Incorporated | Drip chemical delivery method and apparatus |
JP3044277B2 (ja) * | 1994-12-21 | 2000-05-22 | 信越半導体株式会社 | ウェーハの洗浄及び洗浄乾燥装置 |
DE69833847T2 (de) | 1997-09-24 | 2006-12-28 | Interuniversitair Micro-Electronica Centrum Vzw | Verfahren zum Entfernen von Teilchen und Flüssigkeit von der Oberfläche eines Substrats |
JP2930580B1 (ja) * | 1998-03-27 | 1999-08-03 | 株式会社カイジョー | 半導体ウエーハ等用洗浄装置 |
US6247197B1 (en) * | 1998-07-09 | 2001-06-19 | Lam Research Corporation | Brush interflow distributor |
AU772539B2 (en) * | 1999-07-29 | 2004-04-29 | Kaneka Corporation | Method for cleaning photovoltaic module and cleaning apparatus |
US6540841B1 (en) * | 2000-06-30 | 2003-04-01 | Chartered Semiconductor Manufacturing Ltd. | Method and apparatus for removing contaminants from the perimeter of a semiconductor substrate |
US7029597B2 (en) * | 2001-01-23 | 2006-04-18 | Lorin Industries, Inc. | Anodized aluminum etching process and related apparatus |
JP3987362B2 (ja) * | 2002-03-28 | 2007-10-10 | 大日本スクリーン製造株式会社 | 基板処理装置 |
JP2004331349A (ja) * | 2003-05-09 | 2004-11-25 | Ulvac Japan Ltd | インライン式真空処理装置 |
JP2005123353A (ja) * | 2003-10-16 | 2005-05-12 | Shimada Phys & Chem Ind Co Ltd | ブラシおよび洗浄装置 |
US7089687B2 (en) * | 2004-09-30 | 2006-08-15 | Lam Research Corporation | Wafer edge wheel with drying function |
JP2006196783A (ja) * | 2005-01-14 | 2006-07-27 | Sharp Corp | 基板表面処理装置 |
JP2006196784A (ja) * | 2005-01-14 | 2006-07-27 | Sharp Corp | 基板表面処理装置 |
JP2006245221A (ja) * | 2005-03-02 | 2006-09-14 | Sharp Corp | 基板の片面処理装置 |
-
2005
- 2005-11-26 DE DE102005057109A patent/DE102005057109A1/de not_active Withdrawn
-
2006
- 2006-11-22 CN CN2006800438467A patent/CN101313384B/zh not_active Expired - Fee Related
- 2006-11-22 PL PL06829090T patent/PL1952427T5/pl unknown
- 2006-11-22 CA CA2630885A patent/CA2630885C/en not_active Expired - Fee Related
- 2006-11-22 JP JP2008541629A patent/JP4939545B2/ja not_active Expired - Fee Related
- 2006-11-22 EP EP20060829090 patent/EP1952427B2/de not_active Not-in-force
- 2006-11-22 WO PCT/EP2006/011166 patent/WO2007059925A1/de active Application Filing
- 2006-11-22 KR KR1020087012422A patent/KR101371818B1/ko not_active IP Right Cessation
- 2006-11-22 AT AT06829090T patent/ATE532207T1/de active
-
2008
- 2008-05-24 US US12/126,870 patent/US20090032492A1/en not_active Abandoned
-
2014
- 2014-12-15 US US14/570,030 patent/US20150162225A1/en not_active Abandoned
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CN102586779A (zh) * | 2011-11-30 | 2012-07-18 | 常州亿晶光电科技有限公司 | 一种离液式硅片湿法刻蚀装置 |
CN104884704A (zh) * | 2012-08-23 | 2015-09-02 | 绿色主题科技有限责任公司 | 化学棒整理方法和装置 |
CN113089214A (zh) * | 2012-09-19 | 2021-07-09 | 英威达纺织(英国)有限公司 | 用于在地毯纱线上施用颜色和高性能化学物质的设备和方法 |
CN105658860A (zh) * | 2012-09-19 | 2016-06-08 | 英威达技术有限公司 | 用于在地毯纱线上施用颜色和高性能化学物质的设备和方法 |
CN107408523A (zh) * | 2014-12-18 | 2017-11-28 | 韩华 Q Cells有限公司 | 用于半导体晶片的湿化学处理的直排湿式工作台装置及方法 |
CN107408523B (zh) * | 2014-12-18 | 2021-02-23 | 韩华 Q Cells有限公司 | 用于半导体晶片的湿化学处理的直排湿式工作台装置及方法 |
CN108136446B (zh) * | 2017-05-03 | 2021-03-23 | 深圳市柔宇科技有限公司 | 清洁装置和柔性显示器的制造设备 |
CN108136446A (zh) * | 2017-05-03 | 2018-06-08 | 深圳市柔宇科技有限公司 | 清洁装置和柔性显示器的制造设备 |
CN112139189A (zh) * | 2019-06-26 | 2020-12-29 | 日本电气硝子株式会社 | 玻璃板的清洗装置及玻璃板的制造方法 |
CN110976363A (zh) * | 2019-12-24 | 2020-04-10 | 安徽达顺不锈钢有限公司 | 一种具有输送功能的钢卷用清洗机 |
CN113996576A (zh) * | 2021-10-29 | 2022-02-01 | 浙江海丰生物科技股份有限公司 | 一种切叶束正反面分段式连续自动清洗方法 |
CN116553063A (zh) * | 2023-04-23 | 2023-08-08 | 宇弘研科技(苏州)有限公司 | 一种可调节的传送夹持结构及半导体输送设备 |
CN116553063B (zh) * | 2023-04-23 | 2023-11-03 | 宇弘研科技(苏州)有限公司 | 一种可调节的传送夹持结构及半导体输送设备 |
Also Published As
Publication number | Publication date |
---|---|
EP1952427A1 (de) | 2008-08-06 |
US20090032492A1 (en) | 2009-02-05 |
PL1952427T3 (pl) | 2012-04-30 |
EP1952427B1 (de) | 2011-11-02 |
JP4939545B2 (ja) | 2012-05-30 |
CA2630885A1 (en) | 2007-05-31 |
WO2007059925A1 (de) | 2007-05-31 |
CA2630885C (en) | 2014-02-18 |
US20150162225A1 (en) | 2015-06-11 |
PL1952427T5 (pl) | 2015-10-30 |
DE102005057109A1 (de) | 2007-05-31 |
CN101313384B (zh) | 2011-05-11 |
JP2009517854A (ja) | 2009-04-30 |
EP1952427B2 (de) | 2015-05-13 |
KR20080084926A (ko) | 2008-09-22 |
KR101371818B1 (ko) | 2014-03-07 |
ATE532207T1 (de) | 2011-11-15 |
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