KR20110015527A - 순수 실리콘의 제조방법 및 제조시스템 - Google Patents

순수 실리콘의 제조방법 및 제조시스템 Download PDF

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Publication number
KR20110015527A
KR20110015527A KR1020107024197A KR20107024197A KR20110015527A KR 20110015527 A KR20110015527 A KR 20110015527A KR 1020107024197 A KR1020107024197 A KR 1020107024197A KR 20107024197 A KR20107024197 A KR 20107024197A KR 20110015527 A KR20110015527 A KR 20110015527A
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KR
South Korea
Prior art keywords
unit
reactor
trichlorosilane
silicon
monosilane
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Ceased
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KR1020107024197A
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English (en)
Korean (ko)
Inventor
크리스티안 슈미트
아돌프 페트릭
요헴 한
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슈미트 실리콘 테크놀로지 게엠베하
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First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=40900722&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=KR20110015527(A) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by 슈미트 실리콘 테크놀로지 게엠베하 filed Critical 슈미트 실리콘 테크놀로지 게엠베하
Publication of KR20110015527A publication Critical patent/KR20110015527A/ko
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/035—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition or reduction of gaseous or vaporised silicon compounds in the presence of heated filaments of silicon, carbon or a refractory metal, e.g. tantalum or tungsten, or in the presence of heated silicon rods on which the formed silicon is deposited, a silicon rod being obtained, e.g. Siemens process
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
    • C01B33/029—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by decomposition of monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/04—Hydrides of silicon
    • C01B33/043—Monosilane
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/1071—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof
    • C01B33/10742—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material
    • C01B33/10757—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane
    • C01B33/10763—Tetrachloride, trichlorosilane or silicochloroform, dichlorosilane, monochlorosilane or mixtures thereof prepared by hydrochlorination of silicon or of a silicon-containing material with the preferential formation of trichlorosilane from silicon
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/08—Compounds containing halogen
    • C01B33/107—Halogenated silanes
    • C01B33/10773—Halogenated silanes obtained by disproportionation and molecular rearrangement of halogenated silanes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P20/00—Technologies relating to chemical industry
    • Y02P20/10—Process efficiency

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Silicon Compounds (AREA)
KR1020107024197A 2008-03-31 2009-03-31 순수 실리콘의 제조방법 및 제조시스템 Ceased KR20110015527A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102008017304A DE102008017304A1 (de) 2008-03-31 2008-03-31 Verfahren und Anlage zur Herstellung von Reinstsilizium
DE102008017304.5 2008-03-31

Publications (1)

Publication Number Publication Date
KR20110015527A true KR20110015527A (ko) 2011-02-16

Family

ID=40900722

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107024197A Ceased KR20110015527A (ko) 2008-03-31 2009-03-31 순수 실리콘의 제조방법 및 제조시스템

Country Status (9)

Country Link
US (1) US20110262338A1 (https=)
EP (1) EP2265546B1 (https=)
JP (1) JP5632362B2 (https=)
KR (1) KR20110015527A (https=)
CN (1) CN102046529B (https=)
CA (1) CA2719858C (https=)
DE (1) DE102008017304A1 (https=)
RU (1) RU2503616C2 (https=)
WO (1) WO2009121558A2 (https=)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA2795395C (en) 2010-04-13 2018-05-29 Schmid Silicon Technology Gmbh Production of monocrystalline semiconductor materials
DE102010015354A1 (de) 2010-04-13 2011-10-13 Schmid Silicon Technology Gmbh Herstellung eines kristallinen Halbleiterwerkstoffs
DE102010021004A1 (de) 2010-05-14 2011-11-17 Schmid Silicon Technology Gmbh Herstellung von monokristallinen Halbleiterwerkstoffen
DE102010034469A1 (de) * 2010-08-06 2012-02-09 Schmid Silicon Technology Gmbh Anlage zur Herstellung von Monosilan
DE102010044755A1 (de) * 2010-09-08 2012-03-08 Spawnt Private S.À.R.L. Verfahren zur Herstellung von Silicium hoher Reinheit
WO2012087795A1 (en) * 2010-12-20 2012-06-28 Memc Electronic Materials, Inc. Production of polycrystalline silicon in substantially closed-loop processes that involve disproportionation operations
US9493360B2 (en) * 2011-11-14 2016-11-15 Sitec Gmbh Processes and systems for non-equilibrium trichlorosilane production
CN102807222B (zh) * 2012-08-17 2014-04-02 中国天辰工程有限公司 一种四氯化硅提纯方法
CN102951646A (zh) * 2012-11-22 2013-03-06 覃攀 硅烷的生产方法
CN103112860B (zh) * 2013-02-26 2015-09-02 天津大学 改良西门子法联产制备高纯硅烷的方法
CN103241743B (zh) * 2013-05-22 2015-07-22 黄国强 三氯氢硅直接歧化制备硅烷的反应精馏方法及设备
CN103936009B (zh) * 2014-04-21 2015-12-30 浙江中宁硅业有限公司 一种硅烷热分解生产纳米级高纯硅粉的装置及方法
RU2593634C2 (ru) * 2014-12-25 2016-08-10 федеральное государственное бюджетное образовательное учреждение высшего образования "Нижегородский государственный технический университет им. Р.Е. Алексеева" Способ глубокой очистки моносилана
CN104828827B (zh) * 2015-05-15 2017-03-08 国电内蒙古晶阳能源有限公司 提纯三氯氢硅的方法
DE102015209008A1 (de) * 2015-05-15 2016-11-17 Schmid Silicon Technology Gmbh Verfahren und Anlage zur Zersetzung von Monosilan

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3968199A (en) * 1974-02-25 1976-07-06 Union Carbide Corporation Process for making silane
GB2028289B (en) * 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
US4676967A (en) 1978-08-23 1987-06-30 Union Carbide Corporation High purity silane and silicon production
US4340574A (en) * 1980-08-28 1982-07-20 Union Carbide Corporation Process for the production of ultrahigh purity silane with recycle from separation columns
US4526769A (en) * 1983-07-18 1985-07-02 Motorola, Inc. Trichlorosilane production process
FR2572312B1 (fr) 1984-10-30 1989-01-20 Rhone Poulenc Spec Chim Procede de fabrication de barreaux de silicium ultra-pur
US4585643A (en) * 1985-05-31 1986-04-29 Union Carbide Corporation Process for preparing chlorosilanes from silicon and hydrogen chloride using an oxygen promoter
US5910295A (en) * 1997-11-10 1999-06-08 Memc Electronic Materials, Inc. Closed loop process for producing polycrystalline silicon and fumed silica
DE19860146A1 (de) * 1998-12-24 2000-06-29 Bayer Ag Verfahren und Anlage zur Herstellung von Silan
DE10044794A1 (de) * 2000-09-11 2002-04-04 Bayer Ag Verfahren zur Herstellung von Trichlorsilan
DE10057522B4 (de) * 2000-11-21 2009-04-16 Evonik Degussa Gmbh Verfahren zur Herstellung von Silanen
DE10061682A1 (de) * 2000-12-11 2002-07-04 Solarworld Ag Verfahren zur Herstellung von Reinstsilicium
DE10062413A1 (de) * 2000-12-14 2002-07-04 Solarworld Ag Verfahren zur Herstellung von Trichlorsilan
DE102005046105B3 (de) 2005-09-27 2007-04-26 Degussa Gmbh Verfahren zur Herstellung von Monosilan
RU2313485C2 (ru) * 2005-10-10 2007-12-27 Юрий Александрович Касаткин Способ получения моносилана

Also Published As

Publication number Publication date
CN102046529A (zh) 2011-05-04
RU2503616C2 (ru) 2014-01-10
DE102008017304A1 (de) 2009-10-01
JP5632362B2 (ja) 2014-11-26
CA2719858A1 (en) 2009-10-08
WO2009121558A2 (de) 2009-10-08
WO2009121558A3 (de) 2010-02-04
JP2011516376A (ja) 2011-05-26
CN102046529B (zh) 2013-04-24
RU2010142993A (ru) 2012-05-10
CA2719858C (en) 2016-06-21
US20110262338A1 (en) 2011-10-27
EP2265546A2 (de) 2010-12-29
EP2265546B1 (de) 2013-12-04
WO2009121558A9 (de) 2010-04-29

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