KR20100126458A - 터널 접합을 구비한 광전 반도체 몸체 및 그러한 반도체 몸체의 제조 방법 - Google Patents

터널 접합을 구비한 광전 반도체 몸체 및 그러한 반도체 몸체의 제조 방법 Download PDF

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Publication number
KR20100126458A
KR20100126458A KR1020107021815A KR20107021815A KR20100126458A KR 20100126458 A KR20100126458 A KR 20100126458A KR 1020107021815 A KR1020107021815 A KR 1020107021815A KR 20107021815 A KR20107021815 A KR 20107021815A KR 20100126458 A KR20100126458 A KR 20100126458A
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South Korea
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layer
type
tunnel junction
semiconductor body
gap
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Abandoned
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KR1020107021815A
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English (en)
Korean (ko)
Inventor
마틴 스트라스부르그
루츠 호펠
마티아스 사바틸
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오스람 옵토 세미컨덕터스 게엠베하
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Publication of KR20100126458A publication Critical patent/KR20100126458A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/816—Bodies having carrier transport control structures, e.g. highly-doped semiconductor layers or current-blocking structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3095—Tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/70—Tunnel-effect diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Led Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Photovoltaic Devices (AREA)
KR1020107021815A 2008-02-29 2009-02-26 터널 접합을 구비한 광전 반도체 몸체 및 그러한 반도체 몸체의 제조 방법 Abandoned KR20100126458A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE102008011849.4 2008-02-29
DE102008011849 2008-02-29
DE102008028036.4 2008-06-12
DE102008028036A DE102008028036A1 (de) 2008-02-29 2008-06-12 Optoelektronischer Halbleiterkörper mit Tunnelübergang und Verfahren zur Herstellung eines solchen

Publications (1)

Publication Number Publication Date
KR20100126458A true KR20100126458A (ko) 2010-12-01

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KR1020107021815A Abandoned KR20100126458A (ko) 2008-02-29 2009-02-26 터널 접합을 구비한 광전 반도체 몸체 및 그러한 반도체 몸체의 제조 방법

Country Status (8)

Country Link
US (1) US20110012088A1 (https=)
EP (1) EP2248192A1 (https=)
JP (1) JP2011513960A (https=)
KR (1) KR20100126458A (https=)
CN (1) CN101960622B (https=)
DE (1) DE102008028036A1 (https=)
TW (1) TWI404232B (https=)
WO (1) WO2009106070A1 (https=)

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DE102011116232B4 (de) 2011-10-17 2020-04-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip und Verfahren zu dessen Herstellung
CN103579426B (zh) * 2012-07-19 2016-04-27 华夏光股份有限公司 半导体装置
DE102013104954A1 (de) * 2013-05-14 2014-11-20 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement und Verfahren zu seiner Herstellung
TWI597862B (zh) * 2013-08-30 2017-09-01 晶元光電股份有限公司 具阻障層的光電半導體元件
CN103489975B (zh) * 2013-10-08 2016-09-07 东南大学 一种具有隧道结结构的氮极性面发光二极管
CN103855263A (zh) * 2014-02-25 2014-06-11 广东省工业技术研究院(广州有色金属研究院) 一种具有极化隧道结的GaN基LED外延片及其制备方法
DE102016103852A1 (de) * 2016-03-03 2017-09-07 Otto-Von-Guericke-Universität Magdeburg Bauelement im System AlGaInN mit einem Tunnelübergang
US9859470B2 (en) * 2016-03-10 2018-01-02 Epistar Corporation Light-emitting device with adjusting element
DE102016113274B4 (de) * 2016-07-19 2023-03-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
US20180331255A1 (en) * 2017-05-12 2018-11-15 X Development Llc Fabrication of ultraviolet light emitting diode with tunnel junction
CN107230738B (zh) * 2017-07-31 2019-05-31 河北工业大学 具有超晶格隧穿结的发光二极管外延结构及其制备方法
JP6964875B2 (ja) * 2017-11-10 2021-11-10 学校法人 名城大学 窒化物半導体発光素子の製造方法
JP7155723B2 (ja) * 2018-08-02 2022-10-19 株式会社リコー 発光素子及びその製造方法
CN113257940B (zh) 2020-02-13 2023-12-29 隆基绿能科技股份有限公司 叠层光伏器件及生产方法
CN113066887B (zh) * 2021-03-19 2023-01-20 扬州乾照光电有限公司 一种太阳电池以及制作方法
CN114566573B (zh) * 2022-02-12 2025-07-04 江西兆驰半导体有限公司 一种AlGaN基深紫外发光二极管芯片及其制备方法
WO2025198675A1 (en) * 2023-12-04 2025-09-25 Ohio State Innovation Foundation Methods of modular construction of 0d-state tunnel junction devices and methods of use thereof

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Also Published As

Publication number Publication date
DE102008028036A1 (de) 2009-09-03
JP2011513960A (ja) 2011-04-28
CN101960622B (zh) 2013-01-09
WO2009106070A1 (de) 2009-09-03
TW200945637A (en) 2009-11-01
CN101960622A (zh) 2011-01-26
US20110012088A1 (en) 2011-01-20
TWI404232B (zh) 2013-08-01
EP2248192A1 (de) 2010-11-10

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