JP2011513960A - トンネル接合を有するオプトエレクトロニクス半導体ボディおよびそのような半導体ボディの製造方法 - Google Patents
トンネル接合を有するオプトエレクトロニクス半導体ボディおよびそのような半導体ボディの製造方法 Download PDFInfo
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- 239000013078 crystal Substances 0.000 claims description 7
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/88—Tunnel-effect diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
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- H—ELECTRICITY
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- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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Abstract
【選択図】図3
Description
Claims (15)
- トンネル接合(2)と、電磁放射を放出するために設けられている活性層(4)と、を有するエピタキシャル半導体積層体、を備えているオプトエレクトロニクス半導体ボディであって、
前記トンネル接合が、n型トンネル接合層(21)とp型トンネル接合層(22)との間の中間層(23)を有し、前記中間層が、前記n型トンネル接合層に面しているn型バリア層(231)と、前記p型トンネル接合層に面しているp型バリア層(233)と、中央層(232)とを有し、前記中央層の材料組成が、前記n型バリア層の材料組成および前記p型バリア層の材料組成とは異なる、
オプトエレクトロニクス半導体ボディ。 - 前記n型バリア層(231)、前記中央層(232)、および前記p型バリア層(233)が、第1の成分および第2の成分を含んでいる半導体材料を備えており、前記第1の成分の割合が、前記n型バリア層および前記p型バリア層におけるよりも前記中央層において低い、
請求項1に記載のオプトエレクトロニクス半導体ボディ。 - 前記第1の成分がアルミニウムを含んでいる、またはアルミニウムから成り、前記第2の成分が、In、Ga、N、Pから成る群のうちの少なくとも1つの元素を含んでいる、
請求項2に記載のオプトエレクトロニクス半導体ボディ。 - 前記第1の成分の前記割合が、前記中央層(232)において20%以下であり、前記n型バリア層(231)および前記p型バリア層(233)において20%以上である、
請求項2または請求項3に記載のオプトエレクトロニクス半導体ボディ。 - 前記n型バリア層(231)の層厚さもしくは前記p型バリア層(233)の層厚さ、またはその両方が、2nm以下である、
請求項1から請求項4のいずれかに記載のオプトエレクトロニクス半導体ボディ。 - トンネル接合(2)と、電磁放射を放出するために設けられている活性層(4)と、を有するエピタキシャル半導体積層体、を備えているオプトエレクトロニクス半導体ボディであって、
前記トンネル接合が、n型トンネル接合層(21)とp型トンネル接合層(22)との間の中間層(23)を有し、前記中間層に、所定の方法で不完全構造(6)が設けられている、
オプトエレクトロニクス半導体ボディ。 - 前記中間層(23)の前記中央層(232)の領域に、所定の方法で不完全構造(6)が設けられている、
請求項1から請求項5のいずれかに記載のオプトエレクトロニクス半導体ボディ。 - 前記不完全構造(6)が、少なくとも部分的に、前記中間層(23)の半導体材料の欠陥によって形成されている、
請求項6または請求項7に記載のオプトエレクトロニクス半導体ボディ。 - 前記不完全構造(6)が、少なくとも部分的に、前記中間層(23)の半導体材料の結晶格子に組み込まれている不純物原子によって形成されている、もしくは、前記不純物原子(6)が前記中間層(23)に層として含まれている、またはその両方である、
請求項6から請求項8のいずれかに記載のオプトエレクトロニクス半導体ボディ。 - 前記不完全構造(6)が、少なくとも部分的に、前記中間層に層として含まれている不純物原子によって形成されており、前記不純物原子の前記層(23b)が、前記半導体材料によって満たされている開口を有する、
請求項6から請求項8のいずれかに記載のオプトエレクトロニクス半導体ボディ。 - 前記n型トンネル接合層(21)もしくは前記p型トンネル接合層(22)またはその両方が、交互層の超格子として具体化されている、
請求項1から請求項10のいずれかに記載のオプトエレクトロニクス半導体ボディ。 - トンネル接合(2)と、電磁放射を放出するために設けられている活性層(4)と、を有するエピタキシャル半導体積層体、を備えているオプトエレクトロニクス半導体ボディ、を製造する方法であって、
前記トンネル接合が、n型トンネル接合層(21)と、中間層(23)と、p型トンネル接合層(22)とを有し、前記中間層を形成するため、半導体材料をエピタキシャルに堆積させ、前記半導体材料の少なくとも一部分に所定の方法で不完全構造(6)を設ける、
方法。 - 前記不完全構造(6)を設ける前記工程が、前記半導体材料の中に欠陥を導入するステップを含んでおり、エピタキシャル炉の中で前記半導体材料を堆積させている間、前記欠陥(6)を導入する目的で、前記エピタキシャル炉の中に水素ガスを少なくともときどき導入する、
請求項12に記載の方法。 - 前記不完全構造(6)を設ける前記工程が、前記半導体材料の中に欠陥を導入するステップを含んでおり、エピタキシャル炉の中で前記半導体材料を堆積させている間、前記欠陥(6)を導入する目的で、前記エピタキシャル炉の中の工程温度もしくは圧力またはその両方を変化させる、
請求項12に記載の方法。 - 前記不完全構造(6)を設ける前記工程が、前記中間層(23)の中に不純物原子を導入するステップを含んでいる、
請求項12に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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DE102008011849 | 2008-02-29 | ||
DE102008028036A DE102008028036A1 (de) | 2008-02-29 | 2008-06-12 | Optoelektronischer Halbleiterkörper mit Tunnelübergang und Verfahren zur Herstellung eines solchen |
PCT/DE2009/000282 WO2009106070A1 (de) | 2008-02-29 | 2009-02-26 | Optoelektronischer halbleiterkörper mit tunnelübergang und verfahren zur herstellung eines solchen |
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EP (1) | EP2248192A1 (ja) |
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CN (1) | CN101960622B (ja) |
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JP2019087709A (ja) * | 2017-11-10 | 2019-06-06 | 学校法人 名城大学 | 窒化物半導体発光素子の製造方法、及び窒化物半導体発光素子 |
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WO2009106070A1 (de) | 2009-09-03 |
TWI404232B (zh) | 2013-08-01 |
EP2248192A1 (de) | 2010-11-10 |
KR20100126458A (ko) | 2010-12-01 |
US20110012088A1 (en) | 2011-01-20 |
TW200945637A (en) | 2009-11-01 |
CN101960622B (zh) | 2013-01-09 |
DE102008028036A1 (de) | 2009-09-03 |
CN101960622A (zh) | 2011-01-26 |
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