KR20100116213A - 금속계 스퍼터링 타겟재 - Google Patents

금속계 스퍼터링 타겟재 Download PDF

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Publication number
KR20100116213A
KR20100116213A KR1020107020641A KR20107020641A KR20100116213A KR 20100116213 A KR20100116213 A KR 20100116213A KR 1020107020641 A KR1020107020641 A KR 1020107020641A KR 20107020641 A KR20107020641 A KR 20107020641A KR 20100116213 A KR20100116213 A KR 20100116213A
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KR
South Korea
Prior art keywords
plane
rolling
target material
sputtering target
sputtering
Prior art date
Application number
KR1020107020641A
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English (en)
Korean (ko)
Inventor
토루 이나구마
히로아키 사카모토
아키로 안도
타다미 오이시
신고 이즈미
하지메 나카무라
Original Assignee
신닛테츠 마테리알즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 신닛테츠 마테리알즈 가부시키가이샤 filed Critical 신닛테츠 마테리알즈 가부시키가이샤
Publication of KR20100116213A publication Critical patent/KR20100116213A/ko

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/12—Both compacting and sintering
    • B22F3/14—Both compacting and sintering simultaneously
    • B22F3/15—Hot isostatic pressing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/18—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces by using pressure rollers

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Powder Metallurgy (AREA)
KR1020107020641A 2008-02-29 2009-02-27 금속계 스퍼터링 타겟재 KR20100116213A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2008049353 2008-02-29
JPJP-P-2008-049353 2008-02-29

Publications (1)

Publication Number Publication Date
KR20100116213A true KR20100116213A (ko) 2010-10-29

Family

ID=41016149

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020107020641A KR20100116213A (ko) 2008-02-29 2009-02-27 금속계 스퍼터링 타겟재

Country Status (5)

Country Link
JP (1) JPWO2009107763A1 (ja)
KR (1) KR20100116213A (ja)
CN (1) CN101960042B (ja)
TW (1) TWI477628B (ja)
WO (1) WO2009107763A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150046278A (ko) * 2012-12-19 2015-04-29 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 탄탈 스퍼터링 타깃 및 그 제조 방법

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5558066B2 (ja) * 2009-09-28 2014-07-23 新日鉄住金マテリアルズ株式会社 ターゲット
JP5854308B2 (ja) * 2010-05-06 2016-02-09 日立金属株式会社 Ｃｒ−Ｔｉ合金ターゲット材
JP6124219B2 (ja) * 2011-11-30 2017-05-10 Ｊｘ金属株式会社 タンタルスパッタリングターゲット及びその製造方法
WO2013088785A1 (ja) * 2011-12-12 2013-06-20 Jx日鉱日石金属株式会社 インジウム製スパッタリングターゲット部材及びその製造方法
JP5183818B1 (ja) * 2012-07-27 2013-04-17 Ｊｘ日鉱日石金属株式会社 インジウム製スパッタリングターゲット部材及びその製造方法
CN104755651B (zh) 2012-12-19 2017-05-24 吉坤日矿日石金属株式会社 钽溅射靶及其制造方法
KR20150095885A (ko) 2013-03-04 2015-08-21 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 탄탈 스퍼터링 타깃 및 그 제조 방법
JP6602550B2 (ja) * 2014-04-28 2019-11-06 株式会社アライドマテリアル スパッタリングターゲット用材料
SG11201708112TA (en) 2015-05-22 2017-11-29 Jx Nippon Mining & Metals Corp Tantalum sputtering target, and production method therefor
JP6736389B2 (ja) * 2015-07-10 2020-08-05 住友化学株式会社 焼結体の製造方法
JP7174476B2 (ja) * 2017-03-31 2022-11-17 Ｊｘ金属株式会社 タングステンターゲット
JP6703972B2 (ja) * 2017-12-18 2020-06-03 日立金属株式会社 焼結部材の製造方法およびそれを用いた焼結部材
EP3859047A4 (en) * 2018-09-26 2022-06-29 JX Nippon Mining & Metals Corporation Sputtering target and method for producing same
CN114990499B (zh) * 2021-07-19 2023-06-20 江苏钢研昊普科技有限公司 一种钼合金靶材的制备方法
JPWO2023058698A1 (ja) * 2021-10-07 2023-04-13
WO2024048664A1 (ja) * 2022-09-02 2024-03-07 東ソー株式会社 モリブデンスパッタリングターゲット、その製造方法、及びモリブデンスパッタリングターゲットを用いたスパッタリング膜の製造方法
JP7394249B1 (ja) * 2023-05-15 2023-12-07 株式会社アルバック モリブデンターゲットおよびその製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3112804B2 (ja) * 1995-03-13 2000-11-27 セントラル硝子株式会社 半導体用タングステンターゲット
JPH1180942A (ja) * 1997-09-10 1999-03-26 Japan Energy Corp Ｔａスパッタターゲットとその製造方法及び組立体
JP3743740B2 (ja) * 1998-07-27 2006-02-08 日立金属株式会社 Ｍｏ系焼結ターゲット材
US6193821B1 (en) * 1998-08-19 2001-02-27 Tosoh Smd, Inc. Fine grain tantalum sputtering target and fabrication process
JP2001011609A (ja) * 1999-06-24 2001-01-16 Honeywell Electronics Japan Kk スパッタリングターゲット及びその製造方法
US6770154B2 (en) * 2001-09-18 2004-08-03 Praxair S.T. Technology, Inc. Textured-grain-powder metallurgy tantalum sputter target
JP2003342720A (ja) * 2002-05-20 2003-12-03 Nippon Steel Corp スパッタリング用モリブデンターゲットの製造方法及びモリブデンターゲット
US7534282B2 (en) * 2003-09-16 2009-05-19 Japan New Metals Co., Ltd. High purity metal Mo coarse powder and sintered sputtering target produced by thereof
US8038857B2 (en) * 2004-03-09 2011-10-18 Idemitsu Kosan Co., Ltd. Thin film transistor, thin film transistor substrate, processes for producing the same, liquid crystal display using the same, and related devices and processes; and sputtering target, transparent electroconductive film formed by use of this, transparent electrode, and related devices and processes

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150046278A (ko) * 2012-12-19 2015-04-29 제이엑스 닛코 닛세키 킨조쿠 가부시키가이샤 탄탈 스퍼터링 타깃 및 그 제조 방법

Also Published As

Publication number Publication date
CN101960042A (zh) 2011-01-26
WO2009107763A1 (ja) 2009-09-03
JPWO2009107763A1 (ja) 2011-07-07
TW201002842A (en) 2010-01-16
TWI477628B (zh) 2015-03-21
CN101960042B (zh) 2013-05-08

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