KR20090125611A - 도금층 형성 방법 - Google Patents
도금층 형성 방법 Download PDFInfo
- Publication number
- KR20090125611A KR20090125611A KR1020080051807A KR20080051807A KR20090125611A KR 20090125611 A KR20090125611 A KR 20090125611A KR 1020080051807 A KR1020080051807 A KR 1020080051807A KR 20080051807 A KR20080051807 A KR 20080051807A KR 20090125611 A KR20090125611 A KR 20090125611A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- forming
- plating
- plating layer
- substrate
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 57
- 238000007747 plating Methods 0.000 title claims description 70
- 239000000758 substrate Substances 0.000 claims abstract description 44
- 229920005992 thermoplastic resin Polymers 0.000 claims abstract description 6
- 239000000919 ceramic Substances 0.000 claims description 16
- 238000009713 electroplating Methods 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229920000106 Liquid crystal polymer Polymers 0.000 claims description 6
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 claims description 6
- 239000002033 PVDF binder Substances 0.000 claims description 6
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 6
- 239000004698 Polyethylene Substances 0.000 claims description 4
- -1 polyethylene Polymers 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- BQCIDUSAKPWEOX-UHFFFAOYSA-N 1,1-Difluoroethene Chemical compound FC(F)=C BQCIDUSAKPWEOX-UHFFFAOYSA-N 0.000 claims description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 3
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 238000005253 cladding Methods 0.000 abstract 3
- 239000000126 substance Substances 0.000 description 5
- 238000007772 electroless plating Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 229920001169 thermoplastic Polymers 0.000 description 1
- 239000004416 thermosoftening plastic Substances 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0073—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces
- H05K3/0076—Masks not provided for in groups H05K3/02 - H05K3/46, e.g. for photomechanical production of patterned surfaces characterised by the composition of the mask
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/01—Dielectrics
- H05K2201/0104—Properties and characteristics in general
- H05K2201/0129—Thermoplastic polymer, e.g. auto-adhesive layer; Shaping of thermoplastic polymer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
- H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Electroplating Methods And Accessories (AREA)
- Other Surface Treatments For Metallic Materials (AREA)
Abstract
Description
Claims (13)
- 기판 상에 시드층을 형성하는 단계;상기 시드층 상에 열가소성 수지로 이루어지며 오픈 영역을 구비하는 패턴층을 형성하는 단계;상기 오픈 영역을 통하여 상기 시드층 상에 도금층을 형성하는 단계; 및상기 패턴층을 제거하는 단계;를 포함하는 도금층 형성 방법.
- 제1항에 있어서,상기 패턴층은 폴리에틸렌(Poly Ethylene), 폴리비닐덴수지(Poly Vinylidene Fluoride, PVDF), LCP(Liquid Crystal Polymer) 및 그 조합으로 구성된 그룹으로부터 선택된 하나의 물질로 이루어진 것을 특징으로 하는 도금층 형성 방법.
- 제1항에 있어서,상기 패턴층의 두께는 20 ~30㎛인 것을 특징으로 하는 도금층 형성 방법.
- 제1항에 있어서,상기 패턴층을 제거하는 단계는 상기 패턴층에 열을 가하여 실행되는 것을 특징으로 하는 도금층 형성 방법.
- 제4항에 있어서,상기 패턴층을 제거하는 단계는 상기 패턴층을 200 ~ 300℃의 온도에서 2 ~ 3 시간 동안 가열하여 실행되는 것을 특징으로 하는 도금층 형성 방법.
- 제1항에 있어서,상기 시드층은 Ti, Cr, ZnO 및 그 조합으로 구성된 그룹으로부터 선택된 하나의 물질로 이루어진 제1층 및 상기 제1층 상에 형성되며 Cu를 포함하는 제2층을 구비하는 것을 특징으로 하는 도금층 형성 방법.
- 제6항에 있어서,상기 제1층의 두께는 0.05 ~ 0.3㎛인 것을 특징으로 하는 도금층 형성 방법.
- 제6항에 있어서,상기 제2층의 두께는 0.3 ~ 1㎛인 것을 특징으로 하는 도금층 형성 방법.
- 제1항에 있어서,상기 시드층을 형성하는 단계는 스퍼터링 또는 전자빔 증착 공정에 의해 실행되는 것을 특징으로 하는 도금층 형성 방법.
- 제1항에 있어서,상기 도금층을 형성하는 단계는 전해 도금 방식으로 실행되는 것을 특징으로 하는 도금층 형성 방법.
- 제10항에 있어서,상기 기판 상에 시드층을 형성하는 단계는 상기 기판 상면 전체 영역에 시드층을 형성하는 단계인 것을 특징으로 하는 도금층 형성 방법.
- 제1항에 있어서,상기 도금층을 형성하는 단계는 Cu층, Ni층 및 Au층을 순차적으로 형성하는 단계인 것을 특징으로 하는 도금층 형성 방법.
- 제1항에 있어서,상기 기판은 그 내부에 상기 도금층과 전기적으로 연결된 내부전극 및 도전성 비아를 구비하는 세라믹 기판인 것을 특징으로 하는 도금층 형성 방법.
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080051807A KR100992269B1 (ko) | 2008-06-02 | 2008-06-02 | 도금층 형성 방법 |
JP2008244535A JP2009293119A (ja) | 2008-06-02 | 2008-09-24 | メッキ層の形成方法 |
US12/243,067 US20090294297A1 (en) | 2008-06-02 | 2008-10-01 | Method of forming plating layer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080051807A KR100992269B1 (ko) | 2008-06-02 | 2008-06-02 | 도금층 형성 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20090125611A true KR20090125611A (ko) | 2009-12-07 |
KR100992269B1 KR100992269B1 (ko) | 2010-11-05 |
Family
ID=41378424
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1020080051807A KR100992269B1 (ko) | 2008-06-02 | 2008-06-02 | 도금층 형성 방법 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20090294297A1 (ko) |
JP (1) | JP2009293119A (ko) |
KR (1) | KR100992269B1 (ko) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101471386B1 (ko) * | 2012-12-21 | 2014-12-11 | 포항공과대학교 산학협력단 | 기판 레벨 패키지 및 그 제조방법 |
CN110419562A (zh) * | 2019-09-02 | 2019-11-08 | 四川长虹电器股份有限公司 | 可改变接入平行板面积的射频解冻装置 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104877152B (zh) * | 2015-05-08 | 2017-07-07 | 陕西科技大学 | 一种制备铜基纳米氧化锌‑聚偏氟乙烯复合材料的方法 |
KR101764144B1 (ko) * | 2015-10-06 | 2017-08-03 | 주식회사 에스에프에이반도체 | 재배선층을 이용한 반도체 패키지 제조방법 |
CN105624749B (zh) * | 2016-03-28 | 2018-07-10 | 上海申和热磁电子有限公司 | 一种陶瓷基板表面金属化的方法 |
CN106783554A (zh) * | 2016-12-13 | 2017-05-31 | 深圳顺络电子股份有限公司 | 一种电子元器件电极的制作方法及电子元器件 |
TWI658763B (zh) | 2017-10-11 | 2019-05-01 | 欣興電子股份有限公司 | 製造導線之方法 |
KR102687513B1 (ko) * | 2018-12-31 | 2024-07-22 | 엘지디스플레이 주식회사 | 마스크 및 이의 제조 방법 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2728693A (en) * | 1953-08-24 | 1955-12-27 | Motorola Inc | Method of forming electrical conductor upon an insulating base |
US4315985A (en) * | 1972-11-30 | 1982-02-16 | International Business Machines Corporation | Fine-line circuit fabrication and photoresist application therefor |
US4016050A (en) * | 1975-05-12 | 1977-04-05 | Bell Telephone Laboratories, Incorporated | Conduction system for thin film and hybrid integrated circuits |
JP2666404B2 (ja) * | 1988-08-31 | 1997-10-22 | ぺんてる株式会社 | 装飾体の製造方法 |
JPH03191083A (ja) * | 1989-12-20 | 1991-08-21 | Mitsubishi Electric Corp | 粗し加工面への黒色めつき方法 |
JPH04277696A (ja) * | 1991-03-06 | 1992-10-02 | Hitachi Ltd | 多層配線基板及びその製造方法 |
US5242535A (en) * | 1992-09-29 | 1993-09-07 | The Boc Group, Inc. | Method of forming a copper circuit pattern |
US6117784A (en) * | 1997-11-12 | 2000-09-12 | International Business Machines Corporation | Process for integrated circuit wiring |
JP3869566B2 (ja) * | 1998-11-13 | 2007-01-17 | 三菱電機株式会社 | フォトレジスト膜除去方法および装置 |
US6320137B1 (en) * | 2000-04-11 | 2001-11-20 | 3M Innovative Properties Company | Flexible circuit with coverplate layer and overlapping protective layer |
US20020045028A1 (en) * | 2000-10-10 | 2002-04-18 | Takayuki Teshima | Microstructure array, mold for forming a microstructure array, and method of fabricating the same |
JP4229103B2 (ja) * | 2001-10-29 | 2009-02-25 | 住友電気工業株式会社 | 金属微細構造体の製造方法 |
JP3750646B2 (ja) * | 2001-10-29 | 2006-03-01 | 住友電気工業株式会社 | 金属微細構造体の製造方法 |
WO2005065433A2 (en) * | 2003-12-31 | 2005-07-21 | Microfabrica Inc. | Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates |
JP2005294539A (ja) | 2004-03-31 | 2005-10-20 | Hitachi Cable Ltd | 半導体装置用テープキャリア及びその製造方法 |
-
2008
- 2008-06-02 KR KR1020080051807A patent/KR100992269B1/ko active IP Right Grant
- 2008-09-24 JP JP2008244535A patent/JP2009293119A/ja active Pending
- 2008-10-01 US US12/243,067 patent/US20090294297A1/en not_active Abandoned
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101471386B1 (ko) * | 2012-12-21 | 2014-12-11 | 포항공과대학교 산학협력단 | 기판 레벨 패키지 및 그 제조방법 |
CN110419562A (zh) * | 2019-09-02 | 2019-11-08 | 四川长虹电器股份有限公司 | 可改变接入平行板面积的射频解冻装置 |
CN110419562B (zh) * | 2019-09-02 | 2022-08-16 | 四川长虹电器股份有限公司 | 可改变接入平行板面积的射频解冻装置 |
Also Published As
Publication number | Publication date |
---|---|
JP2009293119A (ja) | 2009-12-17 |
US20090294297A1 (en) | 2009-12-03 |
KR100992269B1 (ko) | 2010-11-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100992269B1 (ko) | 도금층 형성 방법 | |
EP3220417B1 (en) | Wiring circuit board, semiconductor device, wiring circuit board manufacturing method, and semiconductor device manufacturing method | |
KR101586857B1 (ko) | 다층 세라믹 기판, 전자부품 및 다층 세라믹 기판의 제조 방법 | |
US20070200258A1 (en) | Semiconductor device with semiconductor device components embedded in plastic package compound | |
EP2313900B1 (en) | Substrate with embedded patterned capacitance | |
KR100878414B1 (ko) | 캐패시터 내장형 인쇄회로기판 및 제조방법 | |
WO2020219354A1 (en) | Multilayer capacitor having open mode electrode configuration and flexible terminations | |
US20140041906A1 (en) | Metal heat radiation substrate and manufacturing method thereof | |
US7138068B2 (en) | Printed circuit patterned embedded capacitance layer | |
US20110214913A1 (en) | Electro device embedded printed circuit board and manufacturng method thereof | |
KR100809706B1 (ko) | 반도체 장치의 범프 형성방법 및 그에 의해 형성된 범프 | |
US20130162278A1 (en) | Probe pin, probe card using the probe pin, and method of manufacturing the probe card | |
JP2018516464A (ja) | 開気孔接触片のガルバニック接合による部品の電気接触方法およびそれに対応する部品モジュール | |
JP2002231574A (ja) | 積層型セラミック電子部品の製造方法および積層型セラミック電子部品 | |
JP2013083620A (ja) | プローブカード及びその製造方法 | |
JP5982381B2 (ja) | 回路の製造方法 | |
EP4319512A1 (en) | Wiring board manufacturing method and wiring board | |
JPH03203341A (ja) | 微小電極を有する基板およびその製造方法 | |
KR100711377B1 (ko) | 기판 접합체의 제조 방법, 기판 접합체, 및 전기 광학 장치 | |
KR20080092256A (ko) | 칩 온 필름 배선기판 및 그 제조방법 | |
JP3355312B2 (ja) | 積層セラミック電子部品の製造方法、それに用いる金属膜転写用部材、およびその製造方法 | |
JP4963131B2 (ja) | ウエハ一括コンタクトボード | |
JP2009141303A (ja) | 母基板、および電解めっき膜の形成方法 | |
WO2008072845A1 (en) | Heat sink and method of manufacturing the same | |
JP2005150349A (ja) | 積層型電子部品の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A201 | Request for examination | ||
E902 | Notification of reason for refusal | ||
E701 | Decision to grant or registration of patent right | ||
GRNT | Written decision to grant | ||
FPAY | Annual fee payment |
Payment date: 20130916 Year of fee payment: 4 |
|
FPAY | Annual fee payment |
Payment date: 20141001 Year of fee payment: 5 |
|
FPAY | Annual fee payment |
Payment date: 20151005 Year of fee payment: 6 |
|
FPAY | Annual fee payment |
Payment date: 20171025 Year of fee payment: 8 |
|
FPAY | Annual fee payment |
Payment date: 20180914 Year of fee payment: 9 |
|
FPAY | Annual fee payment |
Payment date: 20190917 Year of fee payment: 10 |