WO2008072845A1 - Heat sink and method of manufacturing the same - Google Patents
Heat sink and method of manufacturing the same Download PDFInfo
- Publication number
- WO2008072845A1 WO2008072845A1 PCT/KR2007/006046 KR2007006046W WO2008072845A1 WO 2008072845 A1 WO2008072845 A1 WO 2008072845A1 KR 2007006046 W KR2007006046 W KR 2007006046W WO 2008072845 A1 WO2008072845 A1 WO 2008072845A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- metal
- ceramic substrate
- layer
- heat sink
- metal ink
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 198
- 239000002184 metal Substances 0.000 claims abstract description 198
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 239000000919 ceramic Substances 0.000 claims abstract description 70
- 239000000843 powder Substances 0.000 claims abstract description 26
- 238000005245 sintering Methods 0.000 claims abstract description 23
- 238000000151 deposition Methods 0.000 claims abstract description 15
- 230000008021 deposition Effects 0.000 claims abstract description 8
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 11
- 229910052802 copper Inorganic materials 0.000 claims description 11
- 239000010949 copper Substances 0.000 claims description 11
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 7
- 229910052759 nickel Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 230000000087 stabilizing effect Effects 0.000 claims description 7
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 5
- 230000007774 longterm Effects 0.000 abstract description 5
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 239000010409 thin film Substances 0.000 description 7
- 230000006641 stabilisation Effects 0.000 description 5
- 238000011105 stabilization Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/245—Reinforcing conductive patterns made by printing techniques or by other techniques for applying conductive pastes, inks or powders; Reinforcing other conductive patterns by such techniques
- H05K3/246—Reinforcing conductive paste, ink or powder patterns by other methods, e.g. by plating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/14—Related to the order of processing steps
- H05K2203/1476—Same or similar kind of process performed in phases, e.g. coarse patterning followed by fine patterning
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
Provided is a heat sink and a method of manufacturing the same. The heat sink manufacturing method includes: a metal ink deposition step (SlO) of depositing metal ink on a ceramic substrate (13) in which the metal ink is mixed with first metal powder having relatively higher thermal conductivity than that of the ceramic substrate (13), to thereby form a metal ink layer (15); a metal ink layer sintering step (S20) of sintering the metal ink layer (15) at a temperature of 5000C to 11000C to thereby combine the first metal powder that has been mixed in the metal ink layer (15) with the ceramic substrate (13), and to thus form a first metal layer (15a) on the upper portion of the ceramic substrate (13); and a second metal layer formation step (S30) of combining second metal having relatively higher thermal conductivity than that of the ceramic substrate (13) on the upper portion of the first metal layer (15a), to thereby form a second metal layer (17) on the upper portion of the first metal layer (15a). Accordingly, ink containing metal having a high thermal conductivity is deposited and sintered on a ceramic substrate and then metal having a high thermal conductivity is plated on the ceramic substrate to manufacture the heat sink, to thereby reduce an inferiority rate at the time of manufacturing the heat sink, prevent deformation from occurring even in a long term use, and have an excellent heat radiating effect.
Description
Description HEAT SINK AND METHOD OF MANUFACTURING THE SAME
Technical Field
[1] The present invention relates to a heat sink and a method of manufacturing the same, and more particularly, to a heat sink and a method of manufacturing the same, in which ink containing metal having a high thermal conductivity is deposited and sintered on a ceramic substrate and then metal having a high thermal conductivity is plated on the ceramic substrate to manufacture the heat sink, to thereby reduce an inferiority rate at the time of manufacturing the heat sink, prevent deformation from occurring even in a long term use, and have an excellent heat radiating effect. Background Art
[2] In general, much heat occurs in operation of power resistors, power transistors or high integration, high speed and large capacity semiconductor integrated circuits which are kinds of electronic components. Heat generated from the inside of the electronic components in operation may cause degradation and malfunction of the electronic components in operation when an electronic circuit having the electronic components operates.
[3] Therefore, in order to discharge heat produced in operation to the outside of the semiconductor integrated circuit, heat sinks are adhered on the bottom of the semiconductor integrated circuit, using adhesives or ultrasonic adhesives.
[4] FIG. 1 is a cross-sectional view illustrating a conventional method of manufacturing a conventional heat sink.
[5] As illustrated in FIG. 1, a conventional heat sink 1 is manufactured according to the following procedure. First, an adhesive 5 is deposited on the upper surface of a ceramic substrate 3. Then, heat is applied to the ceramic substrate 3 on which the adhesive 5 has been deposited. Then, a metal thin film 7 such as copper having a high thermal conductivity is firmly attached on the upper portion of the ceramic substrate under a high pressure using a press machine.
[6] In the case of the conventional heat sink 1, since the metal thin film 7 made of copper should be attached on the upper portion of the ceramic substrate 3 under the high pressure using the press machine, the ceramic substrate 3 or the metal thin film 7 may be damaged at the time of attaching the metal thin film 7 on the upper portion of the ceramic substrate 3. When the heat sink 1 is used for a long time, the adhesive 5 may be deformed by heat generated from an electronic component 9 which has been attached on the upper portion of the metal thin film 7. As a result, the conventional heat sink may cause an adhesion inferiority.
[7] Further, although the heat sink 1 should discharge heat generated from the electronic component 9 to the outside via the metal thin film 7 and the ceramic substrate 3, the adhesive 5 which is used in the conventional heat sink 1 becomes an impediment element when the heat is discharged to the outside via the ceramic substrate 3. Accordingly, there is a problem that a heat radiating efficiency which discharges the heat generated from the electronic component 9 to the outside is reduced. Disclosure of Invention Technical Problem
[8] To solve the above problems, it is an object of the present invention to provide a heat sink and a method of manufacturing the same, in which ink containing metal having a high thermal conductivity is deposited and sintered on a ceramic substrate and then metal having a high thermal conductivity is plated on the ceramic substrate to manufacture the heat sink, to thereby reduce an inferiority rate at the time of manufacturing the heat sink, prevent deformation from occurring even in a long term use, and have an excellent heat radiating effect. Technical Solution
[9] To accomplish the above object of the present invention, according to an aspect of the present invention, there is provided a heat sink that discharges heat that is produced in operation of an electronic component to the outside, the heat sink comprising:
[10] a metal ink layer which is formed by depositing metal ink on a ceramic substrate in which the metal ink is mixed with first metal powder having relatively higher thermal conductivity than that of the ceramic substrate;
[11] a first metal layer which is formed by sintering the metal ink layer at a temperature of
5000C to 11000C to thereby combine the first metal powder that has been mixed in the metal ink layer with the ceramic substrate; and
[12] a second metal layer which is formed by combining second metal having relatively higher thermal conductivity than that of the ceramic substrate on the upper portion of the first metal layer.
[13] According to another aspect of the present invention, there is also provided a method of manufacturing a heat sink which discharges heat generated in operation of an electronic component to the outside, the heat sink manufacturing method comprising:
[14] a metal ink deposition step of depositing metal ink on a ceramic substrate in which the metal ink is mixed with first metal powder having relatively higher thermal conductivity than that of the ceramic substrate, to thereby form a metal ink layer;
[15] a metal ink layer sintering step of sintering the metal ink layer at a temperature of
5000C to 11000C to thereby combine the first metal powder that has been mixed in the metal ink layer with the ceramic substrate, and to thus form a first metal layer on the
upper portion of the ceramic substrate; and
[16] a second metal layer formation step of combining second metal having relatively higher thermal conductivity than that of the ceramic substrate on the upper portion of the first metal layer, to thereby form a second metal layer on the upper portion of the first metal layer.
[17] Preferably but not necessarily, the metal ink layer sintering step comprises the sub- steps of:
[18] preheating the metal ink layer for 3 to 5 minutes at a temperature of 21O0C to 28O0C;
[19] raising the current temperature at a temperature rise rate of 3O0C to 450C per minute for 10 to 18 minutes after having performed the preheating sub-step;
[20] stabilizing the temperature which has been raised in the temperature raising sub-step for 6 to 15 minutes; and
[21] cooling the metal ink layer into the room temperature after having performed the stabilizing sub-step.
Advantageous Effects
[22] As described above, the present invention provides the heat sink and the method of manufacturing the same in which ink containing metal having a high thermal conductivity is deposited and sintered on a ceramic substrate and then metal having a high thermal conductivity is plated on the ceramic substrate to manufacture the heat sink, to thereby reduce an inferiority rate at the time of manufacturing the heat sink, prevent deformation from occurring even in a long term use, and have an excellent heat radiating effect. Brief Description of the Drawings
[23] The above and/or other objects and/or advantages of the present invention will become more apparent by describing the preferred embodiments thereof in detail with reference to the accompanying drawings in which:
[24] FIG. 1 is a cross-sectional view illustrating a conventional method of manufacturing a conventional heat sink;
[25] FIG. 2 is a flowchart view illustrating a method of manufacturing a heat sink according to the present invention;
[26] FIGS. 3 and 4 are cross-sectional views illustrating a method of manufacturing a heat sink according to the present invention, respectively; and
[27] FIG. 5 is a graphical view showing a sintering temperature with respect to a sintering time at a metal ink layer sintering step in the present invention. Best Mode for Carrying Out the Invention
[28] Hereinbelow, a heat sink and a method of manufacturing the same according to a preferred embodiment of the present invention will be described with reference to the
accompanying drawings. Like reference numerals denote like elements through the following embodiments.
[29] FIG. 2 is a flowchart view illustrating a method of manufacturing a heat sink according to the present invention, and FIGS. 3 and 4 are cross-sectional views illustrating a method of manufacturing a heat sink according to the present invention, respectively.
[30] As illustrated in FIGS. 3 and 4, the heat sink 10 according to the present invention includes: a metal ink layer 15 which is formed by depositing metal ink on a ceramic substrate 13 in which the metal ink is mixed with first metal powder having relatively higher thermal conductivity than that of the ceramic substrate 13; a first metal layer 15a which is formed by sintering the metal ink layer 15 at a temperature of 5000C to 11000C to thereby combine the first metal powder that has been mixed in the metal ink layer 15 with the ceramic substrate 13; and a second metal layer 17 which is formed by combining second metal having relatively higher thermal conductivity than that of the ceramic substrate 13 on the upper portion of the first metal layer 15a.
[31] The ceramic substrate 13 is an alumina substrate made of aluminum oxide (Al O ), and the first metal powder is made of one selected from the group consisting of nickel, tin, chrome or silver. The second metal is copper, and the second metal layer 17 is plated on the upper portion of the first metal layer 15 a.
[32] As shown in FIG. 2, the heat sink manufacturing method according to the present invention includes: a metal ink deposition step (SlO) of depositing metal ink on a ceramic substrate 13 in which the metal ink is mixed with first metal powder having relatively higher thermal conductivity than that of the ceramic substrate 13, to thereby form a metal ink layer 15; a metal ink layer sintering step (S20) of sintering the metal ink layer 15 at a temperature of 5000C to 11000C to thereby combine the first metal powder that has been mixed in the metal ink layer 15 with the ceramic substrate 13, and to thus form a first metal layer 15a on the upper portion of the ceramic substrate 13; and a second metal layer formation step (S30) of combining second metal having relatively higher thermal conductivity than that of the ceramic substrate 13 on the upper portion of the first metal layer 15a, to thereby form a second metal layer 17 on the upper portion of the first metal layer 15 a.
[33] The metal ink layer sintering step (S20) includes the sub-steps of: (S21) preheating the metal ink layer 15 for 3 to 5 minutes at a temperature of 21O0C to 28O0C; (S23) raising the current temperature at a temperature rise rate of 3O0C to 450C per minute for 10 to 18 minutes after having performed the preheating sub-step (S21); (S25) stabilizing the temperature which has been raised in the temperature raising sub-step (S23) for 6 to 15 minutes; and (S27) cooling the metal ink layer 15 into the room temperature after having performed the stabilizing sub-step (S25).
[34] At the metal ink deposition step (SlO), the metal ink is printed on the upper surface of the ceramic substrate 13 by a silk screen printing method. At the second metal layer formation step (S30), the second metal is deposited on the upper portion of the first metal layer 15a, to thereby form the second metal layer 17.
[35] The operation and function of the heat sink and the method of manufacturing the same having the above-described structure will follow.
[36] As illustrated in FIGS. 2 and 3, at the metal ink deposition step (SlO), metal ink mixed with the first metal powder made of one selected from the group consisting of nickel, tin, chrome or silver, having a relatively higher thermal conductivity than that of the ceramic substrate 13 is deposited on the upper surface of the ceramic substrate 13 such as an alumina substrate made of aluminum oxide (Al O ), to thereby form a metal ink layer 15. The thermal conductivity of the alumina substrate which is the ceramic substrate 13 is lower than that of nickel, tin, chrome or silver. However, heat generated in operation of an electronic component 19 can be easily discharged to the outside via a copper plating layer being a second metal layer 17 which is formed in a post-process and a first metal layer 15a. In addition, the alumina substrate has a good cohesion capability with the first metal layer 15a at the metal ink layer sintering step (S20) of the first metal powder which is the post-process. Also, at the metal ink deposition step (SlO), it is preferable that the first metal powder which is formed of one of nickel, tin, chrome and silver, and metal ink in which epoxy ink and a hardening agent is mixed are deposited on the upper surface of the ceramic substrate 13 by a silk screen printing method to thereby form a metal ink layer 15. However, the metal ink layer 15 may be formed using a spray.
[37] Nickel, tin, chrome or silver used as the first metal powder has an excellent cohesion capability with the second metal layer 17 formed of copper formed in the post-process, and has the thermal conductivity similar to that of copper. Accordingly, heat generated from the electronic component 19 can be quickly discharged to the outside.
[38] At the metal ink layer sintering step (S20), the first metal powder that has been mixed with the metal ink layer 15 is melted via the sintering process having a preheating sub-step (S21), a temperature raising sub-step (S23), a stabilization sub-step (S25) and a cooling sub-step (S27), and the first metal layer 15a is formed on the upper surface of the ceramic substrate 13 according to the chemical reaction between the first metal powder and the ceramic substrate 13.
[39] As illustrated in FIG. 5, at the preheating sub-step (S21) of a period II, the metal ink layer 15 is preheated for 3 to 5 minutes at a temperature of 21O0C to 28O0C. At the temperature raising sub-step (S23) of a period 12, the current temperature is raised at a temperature rise rate of 3O0C to 450C per minute for 10 to 18 minutes after having performed the preheating sub-step (S21). At the stabilization sub-step (S25) of a period
13, the temperature which has been raised in the temperature raising sub-step (S23) is continuously maintained for 6 to 15 minutes. At the cooling sub-step (S27) of a period
14, the metal ink layer 15 is cooled into the room temperature after having performed the stabilizing sub-step (S25).
[40] The following Tables 1 and 2 illustrate experimental data of the first metal layer 15a and the second metal layer 17 according to temperature at the preheating sub-step (S21) and the stabilization sub-step (S25), respectively.
[41] [42] Table 1 [Table 1] [Table ]
[43] [44] Table 2
[Table 2] [Table ]
[45] [46] As illustrated in Table 1, in the case that the temperature secedes between 21O0C to 28O0C at the preheating sub-step (S21), the first metal layer 15a may be cracked and thus an adhesive strength drops between the first metal layer 15a and the ceramic substrate 13. In addition, when the second metal layer 17 is formed on the upper portion of the first metal layer 15a by an electroplating process at the post-process, dapples or cracks may occur on the electroplated surface of the second metal layer 17. Accordingly, it can be seen that the second metal layer 17 is also poor.
[47] [48] Table 3
[Table 3] [Table ]
[49] [50] Table 4 [Table 4] [Table ]
[51] [52] Table 3 illustrates experimental data for a temperature rise rate per minute at the temperature raising sub-step (S23), and Table 4 illustrates experimental data for a hold time at the stabilization sub-step (S25).
[53] As illustrated in Table 3, the temperature rise rate per minute at the temperature
raising sub-step (S23) is raised from 30°C/minute to 45°C/minute, in order to raise the temperature of the metal ink layer 15. In the case that the temperature is not raised at the temperature raising sub-step (S23), it can be seen that the surface of the first metal layer 15a becomes poor and an adhesive strength between the first metal layer 15a and the ceramic substrate 13 drops. As illustrated in Table 4, the temperature which has been raised in the temperature raising sub-step (S23) is continuously maintained for 6 to 15 minutes at the stabilization sub-step (S25).
[54] At the cooling sub-step (S27), the metal ink layer 15 is cooled into the room temperature, and a hold time at the cooling sub-step (S27) has no relation with the adhesive strength between the first metal layer 15a and the ceramic substrate 13 and the inferiority of the surface of the first metal layer 15a, at the time of forming the first metal layer 15 a.
[55] Therefore, at the above-described metal ink layer sintering step (S20), the liquid phase ingredient of ink is vaporized in the process of sintering the metal ink mixed with the first metal powder. When the first metal powder is melted, the first metal layer 15a combined with the upper surface of the ceramic substrate 13 is formed via the chemical reaction between the first metal powder and the ceramic substrate 13 that is the alumina substrate.
[56] At the second metal layer formation step (S30), the second metal layer 17 is formed on the upper portion of the first metal layer 15a by electroplating by electrolysis or chemically plating copper having a thermal conductivity similar to that of the first metal layer 15a on the upper portion of the first metal layer 15a.
[57] Therefore, although an adhesive has been used to combine a metal thin film of the material of copper with the ceramic substrate in the conventional case, the heat sink 10 according to the present invention does not use any adhesives. In the case of the heat sink 10 according to the present invention, the first metal layer 15a is combined with the upper surface of the ceramic substrate 13 by a sintering process and the second metal layer 17 of the copper material is plated on the upper portion of the first metal layer 15 a.
[58] As a result, deformation is prevented from occurring due to heat generated from the electronic component 19 mounted on the upper portion of the second metal layer 17 even in a long term use, and an excellent thermal conductivity is obtained when heat produced from an electronic component 19 is discharged to the outside via the first metal layer 15a and the second metal layer 17 both having the high thermal conductivity. Mode for the Invention
[59] As described above, the present invention has been described with respect to a par-
ticularly preferred embodiment. However, the present invention is not limited to the above embodiment, and it is possible for one who has an ordinary skill in the art to make various modifications and variations, without departing off the spirit of the present invention. Thus, the protective scope of the present invention is not defined within the detailed description thereof but is defined by the claims to be described later and the technical spirit of the present invention. Industrial Applicability
[60] As described above, the present invention provides a heat sink and a method of manufacturing the same, in which ink containing metal having a high thermal conductivity is deposited and sintered on a ceramic substrate and then metal having a high thermal conductivity is plated on the ceramic substrate to manufacture the heat sink.
[61] As described above, the present invention provides a heat sink and a method of manufacturing the same, in which ink containing metal having a high thermal conductivity is deposited and sintered on a ceramic substrate and then metal having a high thermal conductivity is plated on the ceramic substrate to manufacture the heat sink.
Claims
[1] A heat sink that discharges heat that is produced in operation of an electronic component to the outside, the heat sink comprising: a metal ink layer which is formed by depositing metal ink on a ceramic substrate in which the metal ink is mixed with first metal powder having relatively higher thermal conductivity than that of the ceramic substrate; a first metal layer which is formed by sintering the metal ink layer at a temperature of 5000C to 11000C to thereby combine the first metal powder that has been mixed in the metal ink layer with the ceramic substrate; and a second metal layer which is formed by combining second metal having relatively higher thermal conductivity than that of the ceramic substrate on the upper portion of the first metal layer.
[2] The heat sink according to claim 1, wherein the ceramic substrate is an alumina substrate made of aluminum oxide, and the first metal powder is made of one selected from the group consisting of nickel, tin, chrome or silver.
[3] The heat sink according to claim 1 or 2, wherein the second metal is copper, and the second metal layer is plated on the upper portion of the first metal layer.
[4] A method of manufacturing a heat sink which discharges heat generated in operation of an electronic component to the outside, the heat sink manufacturing method comprising: a metal ink deposition step of depositing metal ink on a ceramic substrate in which the metal ink is mixed with first metal powder having relatively higher thermal conductivity than that of the ceramic substrate, to thereby form a metal ink layer; a metal ink layer sintering step of sintering the metal ink layer at a temperature of
5000C to 11000C to thereby combine the first metal powder that has been mixed in the metal ink layer with the ceramic substrate, and to thus form a first metal layer on the upper portion of the ceramic substrate; and a second metal layer formation step of combining second metal having relatively higher thermal conductivity than that of the ceramic substrate on the upper por tion of the first metal layer, to thereby form a second metal layer on the upper portion of the first metal layer.
[5] The heat sink manufacturing method of claim 4, wherein at the metal ink deposition step, the metal ink is printed on the upper surface of the ceramic substrate by a silk screen printing method.
[6] The heat sink manufacturing method of claim 4, wherein at the second metal layer formation step, the second metal is deposited on the upper portion of the
first metal layer.
[7] The heat sink manufacturing method of any one of claims 4 to 6, wherein the metal ink layer sintering step comprises the sub-steps of: preheating the metal ink layer for 3 to 5 minutes at a temperature of 21O0C to 28O0C; raising the current temperature at a temperature rise rate of 3O0C to 450C per minute for 10 to 18 minutes after having performed the preheating sub-step; stabilizing the temperature which has been raised in the temperature raising sub- step for 6 to 15 minutes; and cooling the metal ink layer into the room temperature after having performed the stabilizing sub-step.
[8] The heat sink manufacturing method of claim 4, wherein the ceramic substrate is an alumina substrate made of aluminum oxide, the first metal powder is made of one selected from the group consisting of nickel, tin, chrome or silver, and the second metal is copper.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060126178A KR100752794B1 (en) | 2006-12-12 | 2006-12-12 | Heat sink and the method |
KR10-2006-0126178 | 2006-12-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008072845A1 true WO2008072845A1 (en) | 2008-06-19 |
Family
ID=38615624
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/KR2007/006046 WO2008072845A1 (en) | 2006-12-12 | 2007-11-28 | Heat sink and method of manufacturing the same |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR100752794B1 (en) |
WO (1) | WO2008072845A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010108362A1 (en) * | 2009-03-23 | 2010-09-30 | Shen Lihao | Heat dissipating structure with heat conducting and heat dissipating ink layer |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101508793B1 (en) * | 2009-02-25 | 2015-04-06 | 한라비스테온공조 주식회사 | Manufacturing method of heat exchanger using thermoelectric module |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003124410A (en) * | 2001-10-19 | 2003-04-25 | Yamaha Corp | Multi-layer heat sink and method for producing it |
KR20040096374A (en) * | 2003-05-09 | 2004-11-16 | 에이비씨타이완일렉트로닉스코포레이션 | Ceramic heat sink with micro-pores structure |
US6933531B1 (en) * | 1999-12-24 | 2005-08-23 | Ngk Insulators, Ltd. | Heat sink material and method of manufacturing the heat sink material |
US20050189093A1 (en) * | 2004-02-27 | 2005-09-01 | Yun-Hyeok Im | Apparatus for transferring heat and method of manufacturing the same |
-
2006
- 2006-12-12 KR KR1020060126178A patent/KR100752794B1/en not_active IP Right Cessation
-
2007
- 2007-11-28 WO PCT/KR2007/006046 patent/WO2008072845A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6933531B1 (en) * | 1999-12-24 | 2005-08-23 | Ngk Insulators, Ltd. | Heat sink material and method of manufacturing the heat sink material |
JP2003124410A (en) * | 2001-10-19 | 2003-04-25 | Yamaha Corp | Multi-layer heat sink and method for producing it |
KR20040096374A (en) * | 2003-05-09 | 2004-11-16 | 에이비씨타이완일렉트로닉스코포레이션 | Ceramic heat sink with micro-pores structure |
US20050189093A1 (en) * | 2004-02-27 | 2005-09-01 | Yun-Hyeok Im | Apparatus for transferring heat and method of manufacturing the same |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2010108362A1 (en) * | 2009-03-23 | 2010-09-30 | Shen Lihao | Heat dissipating structure with heat conducting and heat dissipating ink layer |
Also Published As
Publication number | Publication date |
---|---|
KR100752794B1 (en) | 2007-08-29 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20150118391A1 (en) | Thermal management circuit materials, method of manufacture thereof, and articles formed therefrom | |
JP2001168482A (en) | Ceramics circuit substrate | |
WO2015164593A1 (en) | Metal core printed circuit board with insulation layer | |
EP1039539B1 (en) | Method for producing a ceramic circuit board | |
US20130098867A1 (en) | Method for Selective Metallization on a Ceramic Substrate | |
JP2001130986A (en) | Copper plated ceramic board, peltier element using the same and method for producing copper plated ceramic board | |
JP2003110205A (en) | Metal-ceramics circuit board | |
KR100992269B1 (en) | Forming method for plating layer | |
JP4703377B2 (en) | Stepped circuit board, manufacturing method thereof, and power control component using the same. | |
JPH10326949A (en) | Circuit board | |
US20020112882A1 (en) | Ceramic circuit board | |
WO2008072845A1 (en) | Heat sink and method of manufacturing the same | |
JP2009173541A (en) | Process of manufacturing ceramic circuit board | |
CN108184312A (en) | A kind of double-side conduction ceramic circuit-board and preparation method thereof | |
JP2013191640A (en) | Substrate for power module and manufacturing method of the same | |
KR100913309B1 (en) | Metal electric circuit | |
KR20060025155A (en) | Thermal interconnect systems methods of production and uses thereof | |
WO2020218193A1 (en) | Ceramic circuit substrate and electronic component module | |
JP2001024296A (en) | Ceramic circuit board | |
US6914330B2 (en) | Heat sink formed of diamond-containing composite material with a multilayer coating | |
JP4731771B2 (en) | Circuit board manufacturing method | |
CN118040457A (en) | Silicon carbide copper plating preset gold-tin heat sink structure and processing technology thereof | |
JP2004134493A (en) | Ceramic circuit board | |
JP3973727B2 (en) | Ceramic circuit board | |
JP3758939B2 (en) | Ceramic circuit board |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 07834339 Country of ref document: EP Kind code of ref document: A1 |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 07834339 Country of ref document: EP Kind code of ref document: A1 |