US20050189093A1 - Apparatus for transferring heat and method of manufacturing the same - Google Patents
Apparatus for transferring heat and method of manufacturing the same Download PDFInfo
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- US20050189093A1 US20050189093A1 US11/064,957 US6495705A US2005189093A1 US 20050189093 A1 US20050189093 A1 US 20050189093A1 US 6495705 A US6495705 A US 6495705A US 2005189093 A1 US2005189093 A1 US 2005189093A1
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- powder
- thin film
- sintered body
- metal
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- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47G—HOUSEHOLD OR TABLE EQUIPMENT
- A47G19/00—Table service
- A47G19/22—Drinking vessels or saucers used for table service
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/46—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids
- H01L23/473—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements involving the transfer of heat by flowing fluids by flowing liquids
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F13/00—Arrangements for modifying heat-transfer, e.g. increasing, decreasing
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F21/00—Constructions of heat-exchange apparatus characterised by the selection of particular materials
- F28F21/08—Constructions of heat-exchange apparatus characterised by the selection of particular materials of metal
- F28F21/089—Coatings, claddings or bonding layers made from metals or metal alloys
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/12—Elements constructed in the shape of a hollow panel, e.g. with channels
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3737—Organic materials with or without a thermoconductive filler
-
- A—HUMAN NECESSITIES
- A47—FURNITURE; DOMESTIC ARTICLES OR APPLIANCES; COFFEE MILLS; SPICE MILLS; SUCTION CLEANERS IN GENERAL
- A47G—HOUSEHOLD OR TABLE EQUIPMENT
- A47G19/00—Table service
- A47G19/22—Drinking vessels or saucers used for table service
- A47G2019/2277—Drinking vessels or saucers used for table service collapsible
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F2255/00—Heat exchanger elements made of materials having special features or resulting from particular manufacturing processes
- F28F2255/18—Heat exchanger elements made of materials having special features or resulting from particular manufacturing processes sintered
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- Exemplary embodiments of the present invention relate generally to an apparatus for transferring heat and a method of manufacturing the same.
- semiconductor devices may be required to operate at higher speed while having higher storage capability. Accordingly, semiconductor devices may be becoming more highly integrated than ever before, which may increase the amount of heat generated from semiconductor chips. Failure to dissipate generated heat from the semiconductor chips may cause heat accumulation inside the semiconductor chips, which may adversely affect the operating reliability of the semiconductor chips.
- generated heat from semiconductor chips may be dissipated using a heat transfer device, such as, but not limited to, a heat transfer package or a heat sink attached to the semiconductor chip.
- a heat transfer device such as, but not limited to, a heat transfer package or a heat sink attached to the semiconductor chip.
- the heat concentration on a small area may not be sufficiently dissipated.
- a heat spreader including a cooling fluid therein for circulating the cooling fluid may be provided.
- the dimension of such a conventional heat spreader may be overly thick, thus making the semiconductor chip bulky. Accordingly, the heat spreader installed in a semiconductor chip may increase the total thickness of the semiconductor chip.
- MEMS Micro Electro Mechanical System
- Exemplary embodiments of the present invention may provide a method of manufacturing a heat transfer device including providing a composite material film having uniformly dispersed metal powder and binder powder and a region intended for a fluid channel packed with a packing material, melting the binder powder by heating the composite material film, forming a packing structure in the region intended for the fluid channel by heating the packing material, pressing the metal powder, sintering the metal powder to form the thin film metal sintered body, and forming the fluid channel inside the thin film metal sintered body by removing the packing structure.
- thin film metal sintered body may have a thickness of approximately 0.1 to 3 mm.
- the fluid channel may have a diameter of approximately 0.1 to 2.5 mm.
- the binder powder may be a thermoplastic resin.
- thermoplastic resin may be a polyolefin.
- the polyolefin may be one or more of a polyethylene, polypropylene, ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and polyvinyl alcohol.
- the binder powder may include a plasticizer.
- the packing material may be a thermally curable resin.
- thermally curable resin may be one or more of a phthalic ester, adipic ester, trimeritic ester, and sebacic ester.
- the packing material may be cured at approximately a higher temperature than the melting temperature of the binder powder.
- the metal powder may be pressed at approximately a higher temperature than the curing temperature of the packing material.
- the present invention may include removing the binder powder performed between the pressing of the metal powder and the sintering of the metal powder.
- the binder powder may be removed by at least one of heating and decomposition.
- the binder powder may be decomposed at approximately a higher temperature than the pressing temperature of the metal powder.
- the metal powder may be sintered at approximately a higher temperature than the decomposition temperature of the binder powder.
- the packing structure may be removed by at least one heating and decomposition.
- the packing material may be decomposed at approximately a higher temperature than the sintering temperature of the metal powder.
- Another exemplary embodiment of the present invention may provide a method of manufacturing a heat transfer device including at least providing a composite material film having uniformly dispersed metal powder and binder powder and a region intended for a fluid channel embedded with a packing structure, melting the binder powder by heating the composite material film, pressing the metal powder, sintering the metal powder to form a thin film metal sintered body, and forming the fluid channel inside the thin film metal sintered body by removing the packing structure.
- Another exemplary embodiment of the present invention may provide a heat transfer apparatus for a semiconductor device having at least a thin film metal sintered body including a fluid channel passing through inside the thin film metal sintered body so that a cooling fluid may flow inside the thin film metal sintered body.
- the fluid channel may be formed in a curved shape.
- the cooling fluid may be one or more of a distilled water, a methyl alcohol, an acetone, a gas cooling fluid, and a powder cooling fluid.
- Exemplary embodiments of the present invention may provide a thin film heat spreader which may efficiently prevent leakage of a fluid flowing therein.
- Exemplary embodiments of present invention may also provide a method of manufacturing the thin film heat spreader in a simple, easy manner and/or at reduced cost.
- FIG. 1 is a flowchart that illustrates manufacturing a heat transfer device according to an exemplary embodiment of the present invention
- FIGS. 2A through 2D are views that illustrate manufacturing a heat transfer device according to another exemplary embodiment of the present invention.
- FIG. 3 is a flowchart that illustrates manufacturing a heat transfer device according to another exemplary embodiment of the present invention.
- FIGS. 4A through 4C are views that illustrate manufacturing a heat transfer according to another exemplary embodiment of the present invention.
- FIG. 5 is a perspective view of a heat transfer device according to an exemplary embodiment of the present invention.
- FIG. 1 is a flowchart that illustrates an exemplary embodiment of manufacturing a heat transfer device according to the present invention.
- the flowchart illustrates the manufacturing process S 11 -S 16 .
- the binder powder may be melted; in S 12 , the packing structure may be formed; in S 13 , the metal powder may be pressed; in S 14 , the molten binder powder may be removed; in S 15 , the molten metal powder may be sintered; and in S 16 , the packing structure may be removed.
- S 11 the binder powder may be melted; in S 12 , the packing structure may be formed; in S 13 , the metal powder may be pressed; in S 14 , the molten binder powder may be removed; in S 15 , the molten metal powder may be sintered; and in S 16 , the packing structure may be removed.
- the manufacturing of the heat transfer device will now be described in more detail by referencing FIG. 2A through FIG. 2D .
- a composite material film 11 a intended for a thin film metal sintered body may include at least metal powder and binder powder which may be uniformly dispersed. It should be appreciated that other powder materials may be included in the composite material film 11 a .
- a region 12 a intended for a fluid channel packed with a packing material may be embedded in the composite material film 11 a .
- the composite material film 11 a may be heated to melt the binder powder (S 11 ). The melting of the binder powder may increase flowability of the metal powder, which may ensure efficient binding of the metal powder.
- the binder powder may include a thermoplastic resin in order to provide easy melting.
- the thermoplastic resin used for binder powder may be, for example, polyolefin such as, but not limited to, polyethylene, polypropylene, ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and/or polyvinyl alcohol.
- the binder powder may further include a plasticizer.
- the plasticizer may be, for example, but not limited to, phthalic ester, adipic ester, trimeritic ester, and/or sebacic ester.
- other plasticizer may be used.
- a packing structure 12 b may be formed in the region 12 a intended for a fluid channel (S 12 ).
- a powder or solid packing material may be used.
- the packing structure 12 b may be formed by heating, for example, a thermally curable resin used as the packing material.
- the thermally curable resin may include, for example, but not limited to, a phenolic resin, an urea resin, and/or an epoxy resin.
- the thermally curable resin may be cured at a higher temperature than the melting temperature of the binder powder used as the packing material. Therefore, damage to the packing structure 12 b formed in the region 12 a intended for a fluid channel may be reduced or prevented.
- the metal powder may be heated and pressed, under the condition that the packing structure 12 b has been shaped. Also, the metal powder may be pressed at the higher pressing temperature, thereby maintaining the shape of the packing structure 12 b and effectively bonding the metal powder, under the condition that the metal powder has been bonded in a desired manner by the melted binder powder after the packing material has been cured.
- the pressing temperature of the metal powder may be higher than the curing temperature of the packing material because the metal powder may be pressed after curing the packing material, thereby maintaining the shape of the packing structure 12 b without being damaged by the melted metal powder.
- the binder powder may be removed.
- the metal powder is sintered after removal of the binder powder, a more precise dimension may be produced to form a thin film metal sintered body.
- the removal of the binder powder may be omitted.
- the binder powder may be removed by thermal decomposition.
- the binder powder may be thermally decomposed at a higher temperature than the pressing temperature of the metal powder. Therefore, the binder powder may be decomposed after the pressing of the metal powder, thereby ensuring sufficient binding of the metal powder.
- Reference numeral 11 b may indicate a composite material film in which the binder powder may be removed after the metal powder is melted.
- the molten metal powder may be sintered to form a thin film metal sintered body 11 c (S 15 ).
- the pressed metal powder may be closely contacted to each other and solidified to form the thin film metal sintered body 11 c .
- the pressed metal powder may be sintered at a higher temperature than the decomposition temperature of the thermoplastic resin used for the binder powder. The sintering of the pressed metal powder after the removal of the binder powder may ensure efficient formation of the thin film metal sintered body 11 c.
- the packing structure 12 b may be removed to form a fluid channel 12 d inside the thin film metal sintered body 1 c (S 16 ).
- the packing structure 12 b made of, for example, a thermally curable resin may be removed by thermal decomposition of the thermally curable resin.
- the thermally curable resin may be thermally decomposed at a higher temperature than the sintering temperature of the metal powder. This may result in the packing structure 12 b not being damaged during the formation of the thin film metal sintered body 11 c , which may ensure a formation of the fluid channel 12 d inside the thin film metal sintered body 11 c .
- a liquid cooling fluid such as, but not limited to, distilled water, methyl alcohol, an acetone, a gas cooling fluid, and/or a powder cooling fluid may be circulated through the fluid channel 12 d .
- other liquid cooling fluid may be used. This may result in the generated heat from a semiconductor chip provided with a thin film heat spreader to be sufficiently dissipated.
- the fluid channel 12 d may be integrally formed with the thin film metal sintered body 11 c , unlike a method of coupling an upper plate and a lower plate to form the fluid channel. This may result in reduced or no risk of leakage of a cooling fluid circulating in the fluid channel 12 d .
- the sintering method may ensure an easier and/or less expensive procedure in manufacturing a thin film heat spreader.
- the thin film metal sintered body 11 c may be formed with a thickness d of approximately 0.1 to 3 mm. If the thickness of the thin film metal sintered body 11 c is too thin, then formation of the fluid channel 12 d inside the thin film metal sintered body 11 c may be difficult and leakage of a cooling fluid may occur. On the other hand, if the thickness of the thin film metal sintered body 11 c is too thick, the total thickness of a semiconductor chip provided with the thin film metal sintered body 11 c may increase. In an exemplary embodiment, the size of the thin film metal sintered body 11 c may be formed approximately as a semiconductor chip provided with the thin film metal sintered body 11 c.
- the fluid channel 12 d may be formed with a diameter r of approximately 0.1 to 2.5 mm.
- the diameter r of the fluid channel 12 d may be smaller than the thickness d of the thin film metal sintered body 11 c to reduce or prevent fracture of the thin film metal sintered body 11 c . If the diameter of the fluid channel 12 d is too small, the resistance of a cooling fluid flowing in the fluid channel 12 d may increase, which may reduce or prevent circulation of the cooling fluid through the fluid channel 12 d.
- FIGS. 3 through 4 D Another exemplary embodiment of manufacturing a thin film heat spreader according to the present invention will now be described with reference to FIGS. 3 through 4 D.
- a composite material film 21 a intended for a thin film metal sintered body may include at least metal powder and binder powder which may be uniformly dispersed. It should be appreciated that other powder materials may be included in the composite material film 11 a .
- a packing structure 22 a may be embedded in a region intended for a fluid channel inside the composite material film 21 a .
- the composite material film 21 a may be heated to melt the binder powder (S 21 ). The melting of the binder powder may increase flowability of the metal powder, which may improve binding of the metal powder.
- the binder powder may include a thermoplastic resin to facilitate melting.
- the thermoplastic resin used for binder powder may be, for example, polyolefin.
- polyolefin may be polyethylene, polypropylene, and ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and/or polyvinyl alcohol.
- the binder powder may further include a plasticizer.
- the plasticizer may be, for example, but not limited to, phthalic ester, adipic ester, trimeritic ester, and/or sebacic ester.
- other plasticizers may be used.
- the metal powder may be heated and pressed, under the condition that the binder powder is melted. That is, the metal powder may be pressed at the higher pressing temperature, under the condition that the initial shape of the packing structure 22 a within the metal powder is maintained and the metal powder is bonded in a desired manner by the melted binder powder, thereby maintaining the shape of the packing structure 22 b and effectively bonding the metal powder. Accordingly, the shape of the packing structure 22 a may also be maintained and the metal powder may be effectively bonded thereof.
- the pressing temperature of the metal powders may be higher than the melting temperature of the binder powder because the metal powder is pressed after melting the binder powder, thereby effectively bonding the metal powder.
- the binder powder may be removed.
- a thin film metal sintered body may have a more precise dimension. It should be appreciated that there may be no need to completely remove the binder powder when a sufficiently precise dimension is required. In some cases, the removal of the binder powder may be omitted.
- the binder powder may be removed by thermal decomposition. In an exemplary embodiment, the binder powder may be thermally decomposed at a higher temperature than the pressing temperature of the metal powder. Therefore, the binder powder may be removed after the pressing of the metal powder, thereby improving the binding of the metal powder.
- the molten metal powder may be sintered to form a thin film metal sintered body 21 c (step S 24 ).
- the pressed metal powder may be closely contacted to each other and solidified.
- the pressed metal powder may be sintered at a higher temperature than the decomposition temperature of the thermoplastic resin used for the binder powder. Therefore, the sintering of the pressed metal powder may occur after the removal of the binder powder, thereby ensuring efficient formation of the thin film metal sintered body 21 c.
- the packing structure 22 a may be removed to form a fluid channel 22 d inside the thin film metal sintered body 21 c (S 25 ).
- the packing structure 22 a may be melted at a higher temperature than the sintering temperature of the metal powder. This may result in the packing structure 22 a from being damaged during the formation of the thin film metal sintered body 21 c , which may improve formation of the fluid channel 22 d inside the thin film metal sintered body 21 c .
- the packing structure 22 a When the packing structure 22 a is made of a metal that is melted at a higher temperature than the sintering temperature of the metal powder, a metal with a high toughness (e.g., high viscosity strength and/or high resistance to other fracture factors) may be provided.
- the packing structure 22 a made of a high toughness metal may be mechanically removed, which may improve formation of the fluid channel 22 d.
- a liquid cooling fluid such as, but not limited to, distilled water, methyl alcohol, and acetone, a gas cooling fluid, and/or a powder cooling fluid may be circulated through the fluid channel 22 d .
- other liquid cooling fluid may be used.
- heat generated from a semiconductor chip provided with a thin film heat spreader may be more efficiently dissipated.
- the fluid channel 22 d may be integrally formed with the thin film metal sintered body 21 c , unlike a method of coupling an upper plate and a lower plate to form the fluid channel. This may result in low or no risk of leakage of a cooling fluid circulating in the fluid channel 22 d .
- a sintering method may provide an easier and/or less expensive procedure of manufacturing a thin film heat spreader.
- the thin film metal sintered body 21 c may be formed with a thickness d of approximately 0.1 to 3 mm. If the thickness of the thin film metal sintered body 21 c is too thin, then formation of the fluid channel 22 d inside the thin film metal sintered body 21 c may be difficult and leakage of a cooling fluid may occur. Alternatively, if the thickness of the thin film metal sintered body 21 c is too thick, the total thickness of a semiconductor chip provided with the thin film metal sintered body 21 c may increase. In an exemplary embodiment, the size of the thin film metal sintered body 21 c may be formed approximately as a semiconductor chip provided with the thin film metal sintered body 21 c.
- the fluid channel 22 d may be formed with a diameter r of approximately 0.1 to 2.5 mm.
- the diameter r of the fluid channel 22 d may be smaller than the thickness d of the thin film metal sintered body 21 c to prevent fracture of the thin film metal sintered body 21 c . If the diameter of the fluid channel 22 d is too small, then the resistance of a cooling fluid flowing in the fluid channel 22 d may increase, which may reduce or prevent circulation of the cooling fluid through the fluid channel 22 d.
- FIG. 5 is a perspective view of a thin film heat spreader according to an exemplary embodiment of the present invention.
- a thin film heat spreader may include at least a thin film metal sintered body 1 and a fluid channel 2 .
- the fluid channel 2 may pass through inside the thin film metal sintered body 1 so that a cooling fluid may flow in the thin film metal sintered body 1 .
- the fluid channel 2 may be formed in an elongated and curved shape so that a liquid cooling fluid, such as, but not limited to, distilled water, methyl alcohol, acetone, a gas cooling fluid, and/or a powder cooling fluid may contact with a wider inner surface area of the thin film metal sintered body 1 . It should be appreciated that other liquid cooling fluid may be employed. This results in the generated heat from a semiconductor chip provided with a thin film heat spreader to be efficiently dissipated.
- the thin film metal sintered body 1 may be formed with a thickness d of approximately 0.1 to 3 mm. If the thickness of the thin film metal sintered body 11 c is too thin, then formation of the fluid channel 12 d inside the thin film metal sintered body 11 c may be difficult and leakage of a cooling fluid may occur. Alternatively, if the thickness of the thin film metal sintered body 11 c is too thick, the total thickness of a semiconductor chip provided with the thin film metal sintered body 1 may increase. In an exemplary embodiment, the size of the thin film metal sintered body 1 may be formed approximately as a semiconductor chip provided with the thin film metal sintered body 1 .
- the fluid channel 2 may be formed with a diameter r of approximately 0.1 to 2.5 mm.
- the diameter r of the fluid channel 2 may be smaller than the thickness d of the thin film metal sintered body 1 to prevent fracture of the thin film metal sintered body 1 . If the diameter of the fluid channel 2 is too small, the resistance of a cooling fluid flowing in the fluid channel 2 may increase, which may prevent efficient circulation of the cooling fluid through the fluid channel 2 .
- Exemplary embodiments of the present invention relate to a thin film heat spreader which may reduce or prevent leakage of a fluid flowing therein and a method of manufacturing the same. More particularly, exemplary embodiments of the present invention may provide a thin film heat spreader for reducing or preventing leakage of a fluid flowing therein, and an easier and/or less expensive method of manufacturing the thin film heat spreader.
- Exemplary embodiments describe the composite material film having “uniformly” dispersed metal powder and binder powder.
- the metal and binder powders may be dispersed in other manner, such as consistently, regularly, homogenously, evenly, and/or equivalently. It should be appreciated that the powders may also be uniformly dispersed sporadically or evenly spaced. It should further be appreciated that the dispersed powders may be uniformly dispersed merely on a portion of the composite material film and/or the entire film.
Abstract
An apparatus and method for manufacturing a heat transfer device for a semiconductor device are provided. The method of manufacturing the heat transfer device may include at least providing a composite material film having uniformly dispersed metal powder and binder powder and a region intended for a fluid channel packed with a packing material, melting the binder powder by heating the composite material film, pressing the metal powder, sintering the metal powder to form the thin film metal sintered body, and forming the fluid channel inside the thin film metal sintered body by removing the packing structure.
Description
- This U.S. non-provisional application claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2004-0013427, filed on Feb. 27, 2004 in the Korean Intellectual Property Office, the contents of which are incorporated by reference herein by reference in their entirety.
- 1. Field of the Invention
- Exemplary embodiments of the present invention relate generally to an apparatus for transferring heat and a method of manufacturing the same.
- 2. Description of the Related Art
- Recently, with rapid distribution of information media, such as computers with semiconductor devices, semiconductor devices may be required to operate at higher speed while having higher storage capability. Accordingly, semiconductor devices may be becoming more highly integrated than ever before, which may increase the amount of heat generated from semiconductor chips. Failure to dissipate generated heat from the semiconductor chips may cause heat accumulation inside the semiconductor chips, which may adversely affect the operating reliability of the semiconductor chips.
- Conventionally, generated heat from semiconductor chips may be dissipated using a heat transfer device, such as, but not limited to, a heat transfer package or a heat sink attached to the semiconductor chip. However, due to an increase in the amount of heat per unit area, the heat concentration on a small area may not be sufficiently dissipated.
- To solve the above problem, a heat spreader including a cooling fluid therein for circulating the cooling fluid may be provided. However, the dimension of such a conventional heat spreader may be overly thick, thus making the semiconductor chip bulky. Accordingly, the heat spreader installed in a semiconductor chip may increase the total thickness of the semiconductor chip.
- To reduce the thickness of a heat spreader, a method of adhering upper and lower plates manufactured using Micro Electro Mechanical System (MEMS) technology or a press-forming process may be used. However, in the above arrangement, there may arise problems in that leakage of a fluid flowing in a fluid channel may occur, additional adhering processes and cost may be incurred.
- Exemplary embodiments of the present invention may provide a method of manufacturing a heat transfer device including providing a composite material film having uniformly dispersed metal powder and binder powder and a region intended for a fluid channel packed with a packing material, melting the binder powder by heating the composite material film, forming a packing structure in the region intended for the fluid channel by heating the packing material, pressing the metal powder, sintering the metal powder to form the thin film metal sintered body, and forming the fluid channel inside the thin film metal sintered body by removing the packing structure.
- In other exemplary embodiments, thin film metal sintered body may have a thickness of approximately 0.1 to 3 mm.
- In other exemplary embodiments, the fluid channel may have a diameter of approximately 0.1 to 2.5 mm.
- In other exemplary embodiments, the binder powder may be a thermoplastic resin.
- In yet other exemplary embodiments, the thermoplastic resin may be a polyolefin.
- In yet other exemplary embodiments, the polyolefin may be one or more of a polyethylene, polypropylene, ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and polyvinyl alcohol.
- In other exemplary embodiments, the binder powder may include a plasticizer.
- In other exemplary embodiments, the packing material may be a thermally curable resin.
- In yet other exemplary embodiments, thermally curable resin may be one or more of a phthalic ester, adipic ester, trimeritic ester, and sebacic ester.
- In other exemplary embodiments, the packing material may be cured at approximately a higher temperature than the melting temperature of the binder powder.
- In other exemplary embodiments, the metal powder may be pressed at approximately a higher temperature than the curing temperature of the packing material.
- In other exemplary embodiments, the present invention may include removing the binder powder performed between the pressing of the metal powder and the sintering of the metal powder.
- In other exemplary embodiments, the binder powder may be removed by at least one of heating and decomposition.
- In other exemplary embodiments, the binder powder may be decomposed at approximately a higher temperature than the pressing temperature of the metal powder.
- In yet other exemplary embodiments, the metal powder may be sintered at approximately a higher temperature than the decomposition temperature of the binder powder.
- In other exemplary embodiments, the packing structure may be removed by at least one heating and decomposition.
- In yet other exemplary embodiments, the packing material may be decomposed at approximately a higher temperature than the sintering temperature of the metal powder.
- Another exemplary embodiment of the present invention may provide a method of manufacturing a heat transfer device including at least providing a composite material film having uniformly dispersed metal powder and binder powder and a region intended for a fluid channel embedded with a packing structure, melting the binder powder by heating the composite material film, pressing the metal powder, sintering the metal powder to form a thin film metal sintered body, and forming the fluid channel inside the thin film metal sintered body by removing the packing structure.
- Another exemplary embodiment of the present invention may provide a heat transfer apparatus for a semiconductor device having at least a thin film metal sintered body including a fluid channel passing through inside the thin film metal sintered body so that a cooling fluid may flow inside the thin film metal sintered body.
- In other exemplary embodiments, the fluid channel may be formed in a curved shape.
- In other exemplary embodiments, the cooling fluid may be one or more of a distilled water, a methyl alcohol, an acetone, a gas cooling fluid, and a powder cooling fluid.
- Exemplary embodiments of the present invention may provide a thin film heat spreader which may efficiently prevent leakage of a fluid flowing therein.
- Exemplary embodiments of present invention may also provide a method of manufacturing the thin film heat spreader in a simple, easy manner and/or at reduced cost.
- Exemplary embodiments of the present invention will be readily understood with reference to the following detailed description thereof provided in conjunction with the attached drawings in which:
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FIG. 1 is a flowchart that illustrates manufacturing a heat transfer device according to an exemplary embodiment of the present invention; -
FIGS. 2A through 2D are views that illustrate manufacturing a heat transfer device according to another exemplary embodiment of the present invention; -
FIG. 3 is a flowchart that illustrates manufacturing a heat transfer device according to another exemplary embodiment of the present invention; -
FIGS. 4A through 4C are views that illustrate manufacturing a heat transfer according to another exemplary embodiment of the present invention; and -
FIG. 5 is a perspective view of a heat transfer device according to an exemplary embodiment of the present invention. - Exemplary embodiments of the present invention will now be described more fully with reference to the accompanying drawings, in which exemplary embodiments of the invention are shown. However, it should be appreciated that the invention may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein; rather, the exemplary embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Throughout the specification, the same reference numerals in different drawings may represent the same element.
-
FIG. 1 is a flowchart that illustrates an exemplary embodiment of manufacturing a heat transfer device according to the present invention. As shown inFIG. 1 , the flowchart illustrates the manufacturing process S11-S16. In S11, the binder powder may be melted; in S12, the packing structure may be formed; in S13, the metal powder may be pressed; in S14, the molten binder powder may be removed; in S15, the molten metal powder may be sintered; and in S16, the packing structure may be removed. The manufacturing of the heat transfer device will now be described in more detail by referencingFIG. 2A throughFIG. 2D . - Referring to
FIG. 2A , acomposite material film 11 a intended for a thin film metal sintered body may include at least metal powder and binder powder which may be uniformly dispersed. It should be appreciated that other powder materials may be included in thecomposite material film 11 a. Aregion 12 a intended for a fluid channel packed with a packing material may be embedded in thecomposite material film 11 a. In this state, thecomposite material film 11 a may be heated to melt the binder powder (S11). The melting of the binder powder may increase flowability of the metal powder, which may ensure efficient binding of the metal powder. - In an exemplary embodiment, the binder powder may include a thermoplastic resin in order to provide easy melting. The thermoplastic resin used for binder powder may be, for example, polyolefin such as, but not limited to, polyethylene, polypropylene, ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and/or polyvinyl alcohol. However, it should be appreciated that other thermoplastic resins may be used. The binder powder may further include a plasticizer. The plasticizer may be, for example, but not limited to, phthalic ester, adipic ester, trimeritic ester, and/or sebacic ester. However, it should also be appreciated that other plasticizer may be used.
- Referring to
FIG. 2B , a packingstructure 12 b may be formed in theregion 12 a intended for a fluid channel (S12). In an exemplary embodiment, a powder or solid packing material may be used. The packingstructure 12 b may be formed by heating, for example, a thermally curable resin used as the packing material. Examples of the thermally curable resin that may be used as the packing material may include, for example, but not limited to, a phenolic resin, an urea resin, and/or an epoxy resin. In an exemplary embodiment, the thermally curable resin may be cured at a higher temperature than the melting temperature of the binder powder used as the packing material. Therefore, damage to the packingstructure 12 b formed in theregion 12 a intended for a fluid channel may be reduced or prevented. - In S13, the metal powder may be heated and pressed, under the condition that the packing
structure 12 b has been shaped. Also, the metal powder may be pressed at the higher pressing temperature, thereby maintaining the shape of the packingstructure 12 b and effectively bonding the metal powder, under the condition that the metal powder has been bonded in a desired manner by the melted binder powder after the packing material has been cured. As an exemplary embodiment, the pressing temperature of the metal powder may be higher than the curing temperature of the packing material because the metal powder may be pressed after curing the packing material, thereby maintaining the shape of the packingstructure 12 b without being damaged by the melted metal powder. - In S14, the binder powder may be removed. When the metal powder is sintered after removal of the binder powder, a more precise dimension may be produced to form a thin film metal sintered body. Alternatively, it should be understood that there may be no need to completely remove the binder powder. In some cases, the removal of the binder powder may be omitted. When a thermoplastic resin is used as the binder powder, the binder powder may be removed by thermal decomposition. In an exemplary embodiment, the binder powder may be thermally decomposed at a higher temperature than the pressing temperature of the metal powder. Therefore, the binder powder may be decomposed after the pressing of the metal powder, thereby ensuring sufficient binding of the metal powder.
Reference numeral 11 b may indicate a composite material film in which the binder powder may be removed after the metal powder is melted. - Referring to
FIG. 2C , the molten metal powder may be sintered to form a thin film metal sintered body 11 c (S15). When the pressed metal powder is thermally sintered, the pressed metal powder may be closely contacted to each other and solidified to form the thin film metal sintered body 11 c. In an exemplary embodiment, the pressed metal powder may be sintered at a higher temperature than the decomposition temperature of the thermoplastic resin used for the binder powder. The sintering of the pressed metal powder after the removal of the binder powder may ensure efficient formation of the thin film metal sintered body 11 c. - Referring to
FIG. 2D , the packingstructure 12 b may be removed to form afluid channel 12 d inside the thin film metal sintered body 1 c (S16). The packingstructure 12 b made of, for example, a thermally curable resin may be removed by thermal decomposition of the thermally curable resin. In an exemplary embodiment, the thermally curable resin may be thermally decomposed at a higher temperature than the sintering temperature of the metal powder. This may result in the packingstructure 12 b not being damaged during the formation of the thin film metal sintered body 11 c, which may ensure a formation of thefluid channel 12 d inside the thin film metal sintered body 11 c. A liquid cooling fluid such as, but not limited to, distilled water, methyl alcohol, an acetone, a gas cooling fluid, and/or a powder cooling fluid may be circulated through thefluid channel 12 d. It should be appreciated that other liquid cooling fluid may be used. This may result in the generated heat from a semiconductor chip provided with a thin film heat spreader to be sufficiently dissipated. Further, thefluid channel 12 d may be integrally formed with the thin film metal sintered body 11 c, unlike a method of coupling an upper plate and a lower plate to form the fluid channel. This may result in reduced or no risk of leakage of a cooling fluid circulating in thefluid channel 12 d. Furthermore, the sintering method may ensure an easier and/or less expensive procedure in manufacturing a thin film heat spreader. - In an exemplary embodiment, the thin film metal sintered body 11 c may be formed with a thickness d of approximately 0.1 to 3 mm. If the thickness of the thin film metal sintered body 11 c is too thin, then formation of the
fluid channel 12 d inside the thin film metal sintered body 11 c may be difficult and leakage of a cooling fluid may occur. On the other hand, if the thickness of the thin film metal sintered body 11 c is too thick, the total thickness of a semiconductor chip provided with the thin film metal sintered body 11 c may increase. In an exemplary embodiment, the size of the thin film metal sintered body 11 c may be formed approximately as a semiconductor chip provided with the thin film metal sintered body 11 c. - In an exemplary embodiment, the
fluid channel 12 d may be formed with a diameter r of approximately 0.1 to 2.5 mm. The diameter r of thefluid channel 12 d may be smaller than the thickness d of the thin film metal sintered body 11 c to reduce or prevent fracture of the thin film metal sintered body 11 c. If the diameter of thefluid channel 12 d is too small, the resistance of a cooling fluid flowing in thefluid channel 12 d may increase, which may reduce or prevent circulation of the cooling fluid through thefluid channel 12 d. - Another exemplary embodiment of manufacturing a thin film heat spreader according to the present invention will now be described with reference to
FIGS. 3 through 4 D. - Referring to
FIG. 4A , acomposite material film 21 a intended for a thin film metal sintered body may include at least metal powder and binder powder which may be uniformly dispersed. It should be appreciated that other powder materials may be included in thecomposite material film 11 a. A packingstructure 22 a may be embedded in a region intended for a fluid channel inside thecomposite material film 21 a. In an exemplary embodiment, thecomposite material film 21 a may be heated to melt the binder powder (S21). The melting of the binder powder may increase flowability of the metal powder, which may improve binding of the metal powder. - In an exemplary embodiment, the binder powder may include a thermoplastic resin to facilitate melting. The thermoplastic resin used for binder powder may be, for example, polyolefin. Examples of polyolefin may be polyethylene, polypropylene, and ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and/or polyvinyl alcohol. However, it should be appreciated that other thermoplastic resins may be used besides the ones mentioned above. The binder powder may further include a plasticizer. The plasticizer may be, for example, but not limited to, phthalic ester, adipic ester, trimeritic ester, and/or sebacic ester. However, it should also be appreciated that other plasticizers may be used.
- In S22, the metal powder may be heated and pressed, under the condition that the binder powder is melted. That is, the metal powder may be pressed at the higher pressing temperature, under the condition that the initial shape of the packing
structure 22 a within the metal powder is maintained and the metal powder is bonded in a desired manner by the melted binder powder, thereby maintaining the shape of the packing structure 22 b and effectively bonding the metal powder. Accordingly, the shape of the packingstructure 22 a may also be maintained and the metal powder may be effectively bonded thereof. As an exemplary embodiment, the pressing temperature of the metal powders may be higher than the melting temperature of the binder powder because the metal powder is pressed after melting the binder powder, thereby effectively bonding the metal powder. - In S23, the binder powder may be removed. When the metal powder is sintered after removal of the binder powder, a thin film metal sintered body may have a more precise dimension. It should be appreciated that there may be no need to completely remove the binder powder when a sufficiently precise dimension is required. In some cases, the removal of the binder powder may be omitted. When a thermoplastic resin is used as the binder powder, the binder powder may be removed by thermal decomposition. In an exemplary embodiment, the binder powder may be thermally decomposed at a higher temperature than the pressing temperature of the metal powder. Therefore, the binder powder may be removed after the pressing of the metal powder, thereby improving the binding of the metal powder.
- Referring to
FIG. 4B , the molten metal powder may be sintered to form a thin film metal sinteredbody 21 c (step S24). When the pressed metal powder is thermally sintered, the pressed metal powder may be closely contacted to each other and solidified. In an exemplary embodiment, the pressed metal powder may be sintered at a higher temperature than the decomposition temperature of the thermoplastic resin used for the binder powder. Therefore, the sintering of the pressed metal powder may occur after the removal of the binder powder, thereby ensuring efficient formation of the thin film metal sinteredbody 21 c. - Referring to
FIG. 4C , the packingstructure 22 a may be removed to form afluid channel 22 d inside the thin film metal sinteredbody 21 c (S25). In an exemplary embodiment, the packingstructure 22 a may be melted at a higher temperature than the sintering temperature of the metal powder. This may result in the packingstructure 22 a from being damaged during the formation of the thin film metal sinteredbody 21 c, which may improve formation of thefluid channel 22 d inside the thin film metal sinteredbody 21 c. When the packingstructure 22 a is made of a metal that is melted at a higher temperature than the sintering temperature of the metal powder, a metal with a high toughness (e.g., high viscosity strength and/or high resistance to other fracture factors) may be provided. The packingstructure 22 a made of a high toughness metal may be mechanically removed, which may improve formation of thefluid channel 22 d. - A liquid cooling fluid, such as, but not limited to, distilled water, methyl alcohol, and acetone, a gas cooling fluid, and/or a powder cooling fluid may be circulated through the
fluid channel 22 d. It should be appreciated that other liquid cooling fluid may be used. As a result, heat generated from a semiconductor chip provided with a thin film heat spreader may be more efficiently dissipated. Further, thefluid channel 22 d may be integrally formed with the thin film metal sinteredbody 21 c, unlike a method of coupling an upper plate and a lower plate to form the fluid channel. This may result in low or no risk of leakage of a cooling fluid circulating in thefluid channel 22 d. Furthermore, a sintering method may provide an easier and/or less expensive procedure of manufacturing a thin film heat spreader. - In an exemplary embodiment, the thin film metal sintered
body 21 c may be formed with a thickness d of approximately 0.1 to 3 mm. If the thickness of the thin film metal sinteredbody 21 c is too thin, then formation of thefluid channel 22 d inside the thin film metal sinteredbody 21 c may be difficult and leakage of a cooling fluid may occur. Alternatively, if the thickness of the thin film metal sinteredbody 21 c is too thick, the total thickness of a semiconductor chip provided with the thin film metal sinteredbody 21 c may increase. In an exemplary embodiment, the size of the thin film metal sinteredbody 21 c may be formed approximately as a semiconductor chip provided with the thin film metal sinteredbody 21 c. - In an exemplary embodiment, the
fluid channel 22 d may be formed with a diameter r of approximately 0.1 to 2.5 mm. The diameter r of thefluid channel 22 d may be smaller than the thickness d of the thin film metal sinteredbody 21 c to prevent fracture of the thin film metal sinteredbody 21 c. If the diameter of thefluid channel 22 d is too small, then the resistance of a cooling fluid flowing in thefluid channel 22 d may increase, which may reduce or prevent circulation of the cooling fluid through thefluid channel 22 d. - A heat spreader manufactured by the above-described exemplary embodiments will now be described with reference to
FIG. 5 , which is a perspective view of a thin film heat spreader according to an exemplary embodiment of the present invention. - Referring to
FIG. 5 , a thin film heat spreader according to an exemplary embodiment of the present invention may include at least a thin film metal sinteredbody 1 and afluid channel 2. Thefluid channel 2 may pass through inside the thin film metal sinteredbody 1 so that a cooling fluid may flow in the thin film metal sinteredbody 1. In an exemplary embodiment, thefluid channel 2 may be formed in an elongated and curved shape so that a liquid cooling fluid, such as, but not limited to, distilled water, methyl alcohol, acetone, a gas cooling fluid, and/or a powder cooling fluid may contact with a wider inner surface area of the thin film metal sinteredbody 1. It should be appreciated that other liquid cooling fluid may be employed. This results in the generated heat from a semiconductor chip provided with a thin film heat spreader to be efficiently dissipated. - In an exemplary embodiment, the thin film metal sintered
body 1 may be formed with a thickness d of approximately 0.1 to 3 mm. If the thickness of the thin film metal sintered body 11 c is too thin, then formation of thefluid channel 12 d inside the thin film metal sintered body 11 c may be difficult and leakage of a cooling fluid may occur. Alternatively, if the thickness of the thin film metal sintered body 11 c is too thick, the total thickness of a semiconductor chip provided with the thin film metal sinteredbody 1 may increase. In an exemplary embodiment, the size of the thin film metal sinteredbody 1 may be formed approximately as a semiconductor chip provided with the thin film metal sinteredbody 1. - In an exemplary embodiment, the
fluid channel 2 may be formed with a diameter r of approximately 0.1 to 2.5 mm. The diameter r of thefluid channel 2 may be smaller than the thickness d of the thin film metal sinteredbody 1 to prevent fracture of the thin film metal sinteredbody 1. If the diameter of thefluid channel 2 is too small, the resistance of a cooling fluid flowing in thefluid channel 2 may increase, which may prevent efficient circulation of the cooling fluid through thefluid channel 2. - Exemplary embodiments of the present invention relate to a thin film heat spreader which may reduce or prevent leakage of a fluid flowing therein and a method of manufacturing the same. More particularly, exemplary embodiments of the present invention may provide a thin film heat spreader for reducing or preventing leakage of a fluid flowing therein, and an easier and/or less expensive method of manufacturing the thin film heat spreader.
- Exemplary embodiments describe the composite material film having “uniformly” dispersed metal powder and binder powder. However, it should be understood that the metal and binder powders may be dispersed in other manner, such as consistently, regularly, homogenously, evenly, and/or equivalently. It should be appreciated that the powders may also be uniformly dispersed sporadically or evenly spaced. It should further be appreciated that the dispersed powders may be uniformly dispersed merely on a portion of the composite material film and/or the entire film.
- While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it should be understood by those of ordinary skill in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined by the following claims.
Claims (44)
1. A method of manufacturing, comprising:
providing a composite material film having uniformly dispersed metal powder and binder powder and a region intended for a fluid channel packed with a packing material;
melting the binder powder by heating the composite material film;
forming a packing structure in the region intended for the fluid channel by heating the packing material;
pressing the metal powder;
sintering the metal powder to form a thin film metal sintered body; and
forming the fluid channel inside the thin film metal sintered body by removing the packing structure.
2. The method of claim 1 , wherein the thin film metal sintered body has a thickness of approximately 0.1 to 3 mm.
3. The method of claim 1 , wherein the fluid channel has a diameter of approximately 0.1 to 2.5 mm.
4. The method of claim 1 , wherein the binder powder is a thermoplastic resin.
5. The method of claim 4 , wherein the thermoplastic resin is a polyolefin.
6. The method of claim 5 , wherein the polyolefin is one or more of a polyethylene, polypropylene, ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and polyvinyl alcohol.
7. The method of claim 1 , wherein the binder powder includes a plasticizer.
8. The method of claim 1 , wherein the packing material is a thermally curable resin.
9. The method of claim 8 , wherein thermally curable resin is one or more of a phthalic ester, adipic ester, trimeritic ester, and sebacic ester.
10. The method of claim 8 , wherein the packing material is cured at approximately a higher temperature than the melting temperature of the binder powder.
11. The method of claim 10 , wherein the metal powder is pressed at approximately a higher temperature than the curing temperature of the packing material.
12. The method of claim 1 , further comprising removing the binder powder performed between the pressing of the metal powder and the sintering of the metal powder.
13. The method of claim 12 , wherein the binder powder is removed by at least one of heating and decomposition.
14. The method of claim 13 , wherein the binder powder is decomposed at approximately a higher temperature than the pressing temperature of the metal powder.
15. The method of claim 12 , wherein the metal powder is sintered at approximately a higher temperature than the decomposition temperature of the binder powder.
16. The method of claim 1 , wherein the packing structure is removed by at least one of heating and decomposition.
17. The method of claim 16 , wherein the packing material is decomposed at approximately a higher temperature than the sintering temperature of the metal powder.
18. A method of manufacturing, comprising:
providing a composite material film having uniformly dispersed metal powder and binder powder and a region intended for a fluid channel embedded with a packing structure;
melting the binder powder by heating the composite material film;
pressing the metal powder;
sintering the metal powder to form a thin film metal sintered body; and
forming the fluid channel inside the thin film metal sintered body by removing the packing structure.
19. The method of claim 18 , wherein the thin film metal sintered body has a thickness of approximately 0.1 to 3 mm.
20. The method of claim 18 , wherein the fluid channel has a diameter of approximately 0.1 to 2.5 mm.
21. The method of claim 18 , wherein the binder powder is a thermoplastic resin.
22. The method of claim 21 , wherein the thermoplastic resin is a polyolefin.
23. The method of claim 22 , wherein the polyolefin is one or more of a polyethylene, polypropylene, ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and polyvinyl alcohol.
24. The method of claim 18 , wherein the binder powder includes a plasticizer.
25. The method of claim 18 , wherein the packing structure is a thermally curable resin.
26. The method of claim 25 , wherein thermally curable resin is one of a phthalic ester, adipic ester, trimeritic ester, and sebacic ester.
27. The method of claim 18 , wherein the metal powder is pressed at approximately a higher temperature than the melting temperature of the binder powder.
28. The method of claim 18 , further comprising removing the binder powder performed between the pressing of the metal powder and the sintering of the metal powder.
29. The method of claim 28 , wherein the binder powder is removed by at least one of heating and decomposition.
30. The method of claim 29 , wherein the binder powder is decomposed at approximately a higher temperature than the pressing temperature of the metal powder.
31. The method of claim 28 , wherein the metal powder is sintered at approximately a higher temperature than the decomposition temperature of the binder powder.
32. The method of claim 31 , wherein the packing structure is melted at approximately a higher temperature than the sintering temperature of the metal powder.
33. A heat transfer apparatus for a semiconductor device, comprising:
a thin film metal sintered body including a fluid channel passing through inside the thin film metal sintered body so that a cooling fluid flows inside the thin film metal sintered body.
34. The heat transfer apparatus of claim 33 , wherein the fluid channel is formed in a curved shape.
35. The heat transfer apparatus of claim 33 , wherein the thin film metal sintered body has a thickness of approximately 0.1 to 3 mm.
36. The heat transfer apparatus of claim 33 , wherein the fluid channel has a diameter of approximately 0.1 to 2.5 mm.
37. The heat transfer apparatus of claim 33 , wherein the thin film metal sintered body is uniformly dispersed with metal power and binder powder.
38. The heat transfer apparatus of claim 37 , wherein the binder powder is a thermoplastic resin.
39. The heat transfer apparatus of claim 38 , wherein the thermoplastic resin is a polyolefin.
40. The heat transfer apparatus of claim 39 , wherein the polyolefin is one or more of a polyethylene, polypropylene, ethylene-vinylacetate copolymer, polymethylacrylate, polybutylacrylate, polystyrene, polyvinyl chloride, polyvinylidene chloride, polyester, polyether, and polyvinyl alcohol.
41. The heat transfer apparatus of claim 37 , wherein the binder powder includes a plasticizer.
42. The heat transfer apparatus of claim 33 , wherein the cooling fluid is at least one of a distilled water, a methyl alcohol, an acetone, a gas cooling fluid, and a powder cooling fluid.
43. A heat transfer apparatus manufactured according to the method of claim 1 .
44. A heat transfer apparatus manufactured according to the method of claim 18.
Applications Claiming Priority (2)
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KR10-2004-0013427 | 2004-02-27 | ||
KR1020040013427A KR100609014B1 (en) | 2004-02-27 | 2004-02-27 | Thin film heat spreader and method for manufacturing the same |
Publications (1)
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US20050189093A1 true US20050189093A1 (en) | 2005-09-01 |
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ID=34880320
Family Applications (1)
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US11/064,957 Abandoned US20050189093A1 (en) | 2004-02-27 | 2005-02-25 | Apparatus for transferring heat and method of manufacturing the same |
Country Status (4)
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US (1) | US20050189093A1 (en) |
JP (1) | JP2005244243A (en) |
KR (1) | KR100609014B1 (en) |
CN (1) | CN1660528A (en) |
Cited By (2)
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WO2008072845A1 (en) * | 2006-12-12 | 2008-06-19 | Seil Electronics Co., Ltd. | Heat sink and method of manufacturing the same |
US9417013B2 (en) | 2010-11-12 | 2016-08-16 | Toyota Motor Engineering & Manufacturing North America, Inc. | Heat transfer systems including heat conducting composite materials |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5744540B2 (en) * | 2011-01-26 | 2015-07-08 | 新光電気工業株式会社 | Metal composite material, metal composite material manufacturing method, heat dissipation component, and heat dissipation component manufacturing method |
CN105823357A (en) * | 2016-04-18 | 2016-08-03 | 张平 | Whole flow passage magnetization showering heat recovery plate |
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SG152908A1 (en) * | 2001-08-28 | 2009-06-29 | Advanced Materials Tech | Advanced microelectronic heat dissipation package and method for its manufacture |
JP3452059B1 (en) | 2002-05-15 | 2003-09-29 | 松下電器産業株式会社 | Cooling device and electronic equipment equipped with it |
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- 2004-02-27 KR KR1020040013427A patent/KR100609014B1/en not_active IP Right Cessation
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- 2005-02-25 JP JP2005052082A patent/JP2005244243A/en not_active Withdrawn
- 2005-02-25 US US11/064,957 patent/US20050189093A1/en not_active Abandoned
- 2005-02-28 CN CN2005100525142A patent/CN1660528A/en active Pending
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US5380179A (en) * | 1992-03-16 | 1995-01-10 | Kawasaki Steel Corporation | Binder system for use in the injection molding of sinterable powders and molding compound containing the binder system |
US6475429B2 (en) * | 1997-07-08 | 2002-11-05 | Tokyo Tungsten Co., Ltd. | Heat sink substrate consisting essentially of copper and molybdenum and method of manufacturing the same |
US6569380B2 (en) * | 2001-08-27 | 2003-05-27 | Advanced Materials Technologies Pte, Ltd. | Enclosure for a semiconductor device |
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US9417013B2 (en) | 2010-11-12 | 2016-08-16 | Toyota Motor Engineering & Manufacturing North America, Inc. | Heat transfer systems including heat conducting composite materials |
Also Published As
Publication number | Publication date |
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CN1660528A (en) | 2005-08-31 |
KR100609014B1 (en) | 2006-08-03 |
JP2005244243A (en) | 2005-09-08 |
KR20050087554A (en) | 2005-08-31 |
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