KR20090034983A - 나노입자층의 열전사를 위한 공정 및 도너 요소 - Google Patents

나노입자층의 열전사를 위한 공정 및 도너 요소 Download PDF

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Publication number
KR20090034983A
KR20090034983A KR1020097003200A KR20097003200A KR20090034983A KR 20090034983 A KR20090034983 A KR 20090034983A KR 1020097003200 A KR1020097003200 A KR 1020097003200A KR 20097003200 A KR20097003200 A KR 20097003200A KR 20090034983 A KR20090034983 A KR 20090034983A
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KR
South Korea
Prior art keywords
layer
group
patterned
donor
receiver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020097003200A
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English (en)
Korean (ko)
Inventor
제랄드 도날드 앤드류스
리차드 케빈 베일리
그라시엘라 베아트리츠 블란쳇
조나단 브이. 캐스퍼
존 더블유. 캐트론
레이드 존 체스터필드
토마스 씨. 펠더
펭 가오
호워드 데이비드 그릭스만
마크 비. 골드핑거
마크 앤드류 해머
게리 델마 제이콕스
린다 카예 존슨
루펜 레온 쿠세얀
댈런 이. 키스
이리나 말라요비치
윌리엄 제이. 마르쉘
엘리자베스 포레스터 맥코드
찰스 네헤미아 맥큐엔
제프리 스콧 메스
제프리 뉴네스
리날도 에스. 쉬피노
폴 제이. 쉐논
케네스 조지 샤프
낸시 쥐. 타씨
카린 비. 비스처
Original Assignee
이 아이 듀폰 디 네모아 앤드 캄파니
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 이 아이 듀폰 디 네모아 앤드 캄파니 filed Critical 이 아이 듀폰 디 네모아 앤드 캄파니
Publication of KR20090034983A publication Critical patent/KR20090034983A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0502—Patterning and lithography
    • H05K2203/0528—Patterning during transfer, i.e. without preformed pattern, e.g. by using a die, a programmed tool or a laser
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24893—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including particulate material
    • Y10T428/24901—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including particulate material including coloring matter

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Dispersion Chemistry (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Electroluminescent Light Sources (AREA)
  • Fixing For Electrophotography (AREA)
KR1020097003200A 2006-07-17 2007-07-16 나노입자층의 열전사를 위한 공정 및 도너 요소 Ceased KR20090034983A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/488,262 2006-07-17
US11/488,262 US8308886B2 (en) 2006-07-17 2006-07-17 Donor elements and processes for thermal transfer of nanoparticle layers

Publications (1)

Publication Number Publication Date
KR20090034983A true KR20090034983A (ko) 2009-04-08

Family

ID=39535782

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020097003200A Ceased KR20090034983A (ko) 2006-07-17 2007-07-16 나노입자층의 열전사를 위한 공정 및 도너 요소

Country Status (6)

Country Link
US (1) US8308886B2 (https=)
EP (1) EP2041814A2 (https=)
JP (1) JP2010505640A (https=)
KR (1) KR20090034983A (https=)
CN (1) CN101517769A (https=)
WO (1) WO2008091285A2 (https=)

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US9302908B2 (en) * 2010-12-17 2016-04-05 Georgetown University Systems and process for forming carbon nanotube sensors
JP6021113B2 (ja) * 2011-03-04 2016-11-02 国立大学法人北海道大学 Ｅｕ（ＩＩ）化合物及び金属を含有するナノ結晶及び薄膜
KR102129399B1 (ko) 2011-11-08 2020-07-02 노스이스턴 유니버시티 나노엘리먼트들의 직접 어셈블리 및 전사를 위한 다마신 템플레이트
CN102496664B (zh) * 2011-12-01 2014-01-08 重庆平伟实业股份有限公司 一种延长砷化镓led寿命的合金方法
KR20130078025A (ko) * 2011-12-30 2013-07-10 코오롱인더스트리 주식회사 레이저 열전사 방법용 도너필름
KR101459131B1 (ko) * 2011-12-30 2014-11-10 제일모직주식회사 열전사 필름
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US9178011B2 (en) * 2013-03-13 2015-11-03 Intermolecular, Inc. Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
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US20140353005A1 (en) * 2013-06-04 2014-12-04 E I Du Pont De Nemours And Company Method of making microwave and millimeterwave electronic circuits by laser patterning of unfired low temperature co-fired ceramic (ltcc) substrates
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US9056514B2 (en) * 2013-08-05 2015-06-16 Kodak Alaris Inc. Thermal clear laminate donor element
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KR20160115076A (ko) * 2015-03-25 2016-10-06 서울대학교산학협력단 높은 전계 효과 이동도를 가지는 BaSnO3 박막 트랜지스터 및 그의 제조 방법
WO2017019632A1 (en) * 2015-07-24 2017-02-02 Artilux Corporation Multi-wafer based light absorption apparatus and applications thereof
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JP7116795B2 (ja) * 2018-03-12 2022-08-10 ヘリオソニック ゲーエムベーハー レーザ印刷方法
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CN109776379B (zh) * 2019-03-08 2021-01-15 武汉大学 一种可用于响应活细胞内和慢性伤口发展过程中pH变化的近红外荧光探针及其制备方法
CN114390977B (zh) 2019-09-10 2024-01-02 日声股份有限公司 激光诱导的转印法
CN111221066B (zh) * 2020-03-26 2021-11-26 合肥工业大学 一种基于光调控的红外吸收器
CN112126493B (zh) * 2020-09-28 2022-09-09 国网河南省电力公司周口供电公司 一种光纤油膏和光纤复合碳纤维导线
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Also Published As

Publication number Publication date
WO2008091285A2 (en) 2008-07-31
JP2010505640A (ja) 2010-02-25
US8308886B2 (en) 2012-11-13
EP2041814A2 (en) 2009-04-01
CN101517769A (zh) 2009-08-26
US20100239794A1 (en) 2010-09-23
WO2008091285A3 (en) 2008-12-24

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