JP2010505640A - ドナー要素、およびナノ粒子層の熱転写方法 - Google Patents

ドナー要素、およびナノ粒子層の熱転写方法 Download PDF

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Publication number
JP2010505640A
JP2010505640A JP2009520790A JP2009520790A JP2010505640A JP 2010505640 A JP2010505640 A JP 2010505640A JP 2009520790 A JP2009520790 A JP 2009520790A JP 2009520790 A JP2009520790 A JP 2009520790A JP 2010505640 A JP2010505640 A JP 2010505640A
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JP
Japan
Prior art keywords
layer
group
patterned
donor
receiver
Prior art date
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Abandoned
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JP2009520790A
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English (en)
Japanese (ja)
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JP2010505640A5 (https=
Inventor
ジェラルド・ドナルド・アンドルーズ
リチャード・ケヴィン・ベイリー
グラシエラ・ベアトリス・ブランチェット
ジョナサン・ヴィー・カスパー
ジョン・ダブリュー・カトロン
リード・ジョン・チェスターフィールド
トマス・シー・フェルダー
フェン・ガオ
ハワード・デイヴィッド・グリックスマン
マーク・ビー・ゴールドフィンガー
マーク・アンドルー・ハーマー
ゲアリー・デルマー・ジェイコックス
リンダ・ケイ・ジョンソン
ルーパン・レオン・クゥセイヤン
ダレン・イー・キーズ
アイリーナ・マラジョヴィック
ウィリアム・ジェイ・マーシャル
エリザベス・フォレスター・マコード
チャールズ・ニーマイア・マキューエン
ジェフリー・スコット・メス
ジェフリー・ヌーニシュ
リナルド・エス・シフィーノ
ポール・ジェイ・シャノン
ケネス・ジョージ・シャープ
ナンシー・ジー・タシ
カーリン・ビー・ヴィセ
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EIDP Inc
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EI Du Pont de Nemours and Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by EI Du Pont de Nemours and Co filed Critical EI Du Pont de Nemours and Co
Publication of JP2010505640A publication Critical patent/JP2010505640A/ja
Publication of JP2010505640A5 publication Critical patent/JP2010505640A5/ja
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/18—Deposition of organic active material using non-liquid printing techniques, e.g. thermal transfer printing from a donor sheet
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
    • H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/09—Use of materials for the conductive, e.g. metallic pattern
    • H05K1/092—Dispersed materials, e.g. conductive pastes or inks
    • H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/05—Patterning and lithography; Masks; Details of resist
    • H05K2203/0502—Patterning and lithography
    • H05K2203/0528—Patterning during transfer, i.e. without preformed pattern, e.g. by using a die, a programmed tool or a laser
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
    • Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
    • Y10T428/24893—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including particulate material
    • Y10T428/24901—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.] including particulate material including coloring matter

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Dispersion Chemistry (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Electroluminescent Light Sources (AREA)
  • Fixing For Electrophotography (AREA)
JP2009520790A 2006-07-17 2007-07-16 ドナー要素、およびナノ粒子層の熱転写方法 Abandoned JP2010505640A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/488,262 US8308886B2 (en) 2006-07-17 2006-07-17 Donor elements and processes for thermal transfer of nanoparticle layers
PCT/US2007/016120 WO2008091285A2 (en) 2006-07-17 2007-07-16 Donor elements and processes for thermal transfer of nanoparticle layers

Publications (2)

Publication Number Publication Date
JP2010505640A true JP2010505640A (ja) 2010-02-25
JP2010505640A5 JP2010505640A5 (https=) 2010-09-02

Family

ID=39535782

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2009520790A Abandoned JP2010505640A (ja) 2006-07-17 2007-07-16 ドナー要素、およびナノ粒子層の熱転写方法

Country Status (6)

Country Link
US (1) US8308886B2 (https=)
EP (1) EP2041814A2 (https=)
JP (1) JP2010505640A (https=)
KR (1) KR20090034983A (https=)
CN (1) CN101517769A (https=)
WO (1) WO2008091285A2 (https=)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011194707A (ja) * 2010-03-19 2011-10-06 Toppan Printing Co Ltd 昇華性熱転写記録媒体
JP2011228571A (ja) * 2010-04-22 2011-11-10 Napura:Kk 充填用基材及びそれを用いた充填方法
JP2015506088A (ja) * 2011-11-08 2015-02-26 ノースイースタン ユニバーシティ 直接組立て用のダマシンテンプレートおよびナノ要素の転写
JP2015044292A (ja) * 2013-08-27 2015-03-12 大日本印刷株式会社 印画物の製造方法
JP2019505946A (ja) * 2016-01-26 2019-02-28 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． 量子ドット発光ダイオードサブピクセルアレイ、その製造方法及び表示装置
WO2019181719A1 (ja) * 2018-03-22 2019-09-26 Dic株式会社 転写紙用樹脂組成物及び積層体
JP2021515719A (ja) * 2018-03-12 2021-06-24 ヘリオソニック ゲーエムベーハー レーザ印刷方法
US11890887B2 (en) 2018-01-27 2024-02-06 Heliosonic Gmbh Laser printing process
US11999181B2 (en) 2019-09-10 2024-06-04 Heliosonic Gmbh Laser induced transfer printing process
JP7686340B1 (ja) * 2025-01-31 2025-06-02 株式会社マルアイ 熱転写シート及び転写物の製造方法

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US8182633B2 (en) * 2008-04-29 2012-05-22 Samsung Electronics Co., Ltd. Method of fabricating a flexible display device
US20110089412A1 (en) * 2008-06-16 2011-04-21 Shigeo Fujimori Patterning method, production method of device using the patterning method, and device
GB2462591B (en) 2008-08-05 2013-04-03 Cambridge Display Tech Ltd Organic thin film transistors and methods of making the same
KR101078079B1 (ko) * 2008-12-10 2011-10-28 엘에스전선 주식회사 은 수식 탄소 나노튜브 함유 전도성 페이스트 조성물
GB0903297D0 (en) * 2009-02-26 2009-04-08 Univ Surrey A method of making a hard latex and a hard latex
CN102448264A (zh) * 2010-10-14 2012-05-09 鸿富锦精密工业（深圳）有限公司 光致发光薄膜、壳体及壳体的制作方法
US9302908B2 (en) * 2010-12-17 2016-04-05 Georgetown University Systems and process for forming carbon nanotube sensors
JP6021113B2 (ja) * 2011-03-04 2016-11-02 国立大学法人北海道大学 Ｅｕ（ＩＩ）化合物及び金属を含有するナノ結晶及び薄膜
CN102496664B (zh) * 2011-12-01 2014-01-08 重庆平伟实业股份有限公司 一种延长砷化镓led寿命的合金方法
KR20130078025A (ko) * 2011-12-30 2013-07-10 코오롱인더스트리 주식회사 레이저 열전사 방법용 도너필름
KR101459131B1 (ko) * 2011-12-30 2014-11-10 제일모직주식회사 열전사 필름
DE102012111382A1 (de) * 2012-11-23 2014-05-28 GAT Gesellschaft für Antriebstechnik mbH Antennenstruktur zur breitbandigen Übertragung elektrischer Signale
WO2014110602A1 (en) * 2013-01-14 2014-07-17 South Dakota State University Nanoparticle films for use as solar cell back reflectors and other applications
US9178011B2 (en) * 2013-03-13 2015-11-03 Intermolecular, Inc. Deposition of anisotropic dielectric layers orientationally matched to the physically separated substrate
US9764580B2 (en) * 2013-03-29 2017-09-19 Dai Nippon Printing Co., Ltd. Thermal transfer sheet, coating liquid for colorant layer, method for manufacturing thermal transfer sheet, and image forming method
US20140353005A1 (en) * 2013-06-04 2014-12-04 E I Du Pont De Nemours And Company Method of making microwave and millimeterwave electronic circuits by laser patterning of unfired low temperature co-fired ceramic (ltcc) substrates
KR20150003970A (ko) * 2013-07-01 2015-01-12 삼성디스플레이 주식회사 도너 필름 및 이를 이용한 열 전사 방법
US9056514B2 (en) * 2013-08-05 2015-06-16 Kodak Alaris Inc. Thermal clear laminate donor element
US8895340B1 (en) 2013-09-10 2014-11-25 Georgetown University Biosensor and system and process for forming
JP6162555B2 (ja) * 2013-09-18 2017-07-12 株式会社東芝 半導体装置、超伝導装置およびその製造方法
KR20160115076A (ko) * 2015-03-25 2016-10-06 서울대학교산학협력단 높은 전계 효과 이동도를 가지는 BaSnO3 박막 트랜지스터 및 그의 제조 방법
WO2017019632A1 (en) * 2015-07-24 2017-02-02 Artilux Corporation Multi-wafer based light absorption apparatus and applications thereof
EP3455864B1 (en) * 2016-05-26 2024-10-23 The Trustees Of The University Of Pennsylvania Laminated magnetic cores
US11156914B2 (en) 2017-02-10 2021-10-26 Northeastern University Damascene template for nanoelement printing fabricated without chemomechanical planarization
US11233332B2 (en) * 2017-05-02 2022-01-25 Electronics And Telecommunications Research Institute Light absorber
US12334239B2 (en) 2018-10-26 2025-06-17 The Trustees Of The University Of Pennsylvania Patterned magnetic cores
CN109776379B (zh) * 2019-03-08 2021-01-15 武汉大学 一种可用于响应活细胞内和慢性伤口发展过程中pH变化的近红外荧光探针及其制备方法
CN111221066B (zh) * 2020-03-26 2021-11-26 合肥工业大学 一种基于光调控的红外吸收器
CN112126493B (zh) * 2020-09-28 2022-09-09 国网河南省电力公司周口供电公司 一种光纤油膏和光纤复合碳纤维导线
CN120424431B (zh) * 2025-07-01 2025-09-09 国网湖北省电力有限公司襄阳供电公司 高压电缆用交联聚乙烯及其制备方法

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Cited By (14)

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JP2011194707A (ja) * 2010-03-19 2011-10-06 Toppan Printing Co Ltd 昇華性熱転写記録媒体
JP2011228571A (ja) * 2010-04-22 2011-11-10 Napura:Kk 充填用基材及びそれを用いた充填方法
JP2015506088A (ja) * 2011-11-08 2015-02-26 ノースイースタン ユニバーシティ 直接組立て用のダマシンテンプレートおよびナノ要素の転写
JP2015044292A (ja) * 2013-08-27 2015-03-12 大日本印刷株式会社 印画物の製造方法
US10505115B2 (en) 2016-01-26 2019-12-10 Boe Technology Group Co., Ltd. Quantum dot light emitting diode subpixel array, method for manufacturing the same, and display device
JP2019505946A (ja) * 2016-01-26 2019-02-28 京東方科技集團股▲ふん▼有限公司Ｂｏｅ Ｔｅｃｈｎｏｌｏｇｙ Ｇｒｏｕｐ Ｃｏ．，Ｌｔｄ． 量子ドット発光ダイオードサブピクセルアレイ、その製造方法及び表示装置
US11890887B2 (en) 2018-01-27 2024-02-06 Heliosonic Gmbh Laser printing process
JP2021515719A (ja) * 2018-03-12 2021-06-24 ヘリオソニック ゲーエムベーハー レーザ印刷方法
JP7116795B2 (ja) 2018-03-12 2022-08-10 ヘリオソニック ゲーエムベーハー レーザ印刷方法
US11932041B2 (en) 2018-03-12 2024-03-19 Heliosonic Gmbh Laser printing process
WO2019181719A1 (ja) * 2018-03-22 2019-09-26 Dic株式会社 転写紙用樹脂組成物及び積層体
JPWO2019181719A1 (ja) * 2018-03-22 2020-10-22 Dic株式会社 転写紙用樹脂組成物及び積層体
US11999181B2 (en) 2019-09-10 2024-06-04 Heliosonic Gmbh Laser induced transfer printing process
JP7686340B1 (ja) * 2025-01-31 2025-06-02 株式会社マルアイ 熱転写シート及び転写物の製造方法

Also Published As

Publication number Publication date
WO2008091285A2 (en) 2008-07-31
US8308886B2 (en) 2012-11-13
EP2041814A2 (en) 2009-04-01
CN101517769A (zh) 2009-08-26
US20100239794A1 (en) 2010-09-23
WO2008091285A3 (en) 2008-12-24
KR20090034983A (ko) 2009-04-08

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