CN102448264A - 光致发光薄膜、壳体及壳体的制作方法 - Google Patents

光致发光薄膜、壳体及壳体的制作方法 Download PDF

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CN102448264A
CN102448264A CN2010105082917A CN201010508291A CN102448264A CN 102448264 A CN102448264 A CN 102448264A CN 2010105082917 A CN2010105082917 A CN 2010105082917A CN 201010508291 A CN201010508291 A CN 201010508291A CN 102448264 A CN102448264 A CN 102448264A
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luminescence generated
light film
matrix
housing
zinc
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张新倍
陈文荣
蒋焕梧
陈正士
王莹莹
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Hongfujin Precision Industry Shenzhen Co Ltd
Hon Hai Precision Industry Co Ltd
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Priority to CN2010105082917A priority Critical patent/CN102448264A/zh
Priority to US13/094,994 priority patent/US20120090868A1/en
Publication of CN102448264A publication Critical patent/CN102448264A/zh
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/02—Pretreatment of the material to be coated
    • C23C14/021—Cleaning or etching treatments
    • C23C14/022—Cleaning or etching treatments by means of bombardment with energetic particles or radiation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3435—Applying energy to the substrate during sputtering
    • C23C14/345—Applying energy to the substrate during sputtering using substrate bias
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3464—Sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources

Abstract

本发明公开一种光致发光薄膜及应用该光致发光薄膜的壳体与壳体的制作方法，该光致发光薄膜为掺铟氧化锌薄膜；所述壳体为所述光致发光薄膜形成在金属基体表面形成；该光致发光薄膜采用物理气象沉积的方法形成在金属基体表面。本壳体在光线照射后在黑暗条件下能发光，使得壳体功能多样且更具趣味性。

Description

光致发光薄膜、壳体及壳体的制作方法
技术领域
本发明是关于一种光致发光薄膜、壳体及壳体的制作方法。
背景技术
电子产品的畅销与否与产品的外观有很大关系，制造商亦不停地开发各种款式的外壳，以求获得市场的青睐。产品不仅在外观上变化，材质上亦不停地尝试，如采用金属制成的壳体，或者通过采用嵌入成型的方法在壳体表面形成有图案的薄膜，然，该等壳体薄膜图案单调，趣味性不足，难以吸引消费者眼球。
发明内容
鉴于上述内容，有必要提供一种能形成在电子装置壳体上以增强电子装置外观趣味性的光致发光薄膜。
另外，有必要提供一种形成有所述光致发光薄膜的壳体。
此外，有必要提供一种所述壳体的制作方法。
一种光致发光薄膜，所述光致发光薄膜主要由掺铟氧化锌组成。
一种壳体，包括一基体及形成在基体上的一光致发光薄膜，所述光致发光薄膜主要由掺铟氧化锌组成。
一种壳体的制作方法，包括以下步骤：
提供一基体，将基体表面进行清洗；
将基体进行物理气相沉积，使基体表面形成掺铟氧化锌薄膜。
相较于现有技术，本光致发光薄膜主要由掺铟氧化锌组成，其能在光线照射条件下储存能量，在光线撤除后可以发光，铟的掺杂增强了所述光致发光薄膜的发光性能。该种在无光线照射条件下壳体可发光的现象增加了壳体的使用趣味性。所述壳体通过采用物理气相沉积方法制作，工艺简单。
附图说明
图1是本发明较佳实施例一壳体的截面示意图。
主要元件符号说明
壳体            10
基体            11
光致发光薄膜    12
具体实施方式
本发明较佳实施例一电子装置的壳体10包括一基体11及一覆盖在基体11上表面的一光致发光薄膜12。
所述基体11可由金属材质制成，如不锈钢、铜、钛、钛合金、铝、铝合金等。
所述光致发光薄膜12主要由掺铟氧化锌组成，还可进一步含有稀有元素，如锶、铕、铂等。该光致发光薄膜12的厚度薄，在500nm以内。该光致发光薄膜12在光照下可吸收及储存能量，并在无光照的条件下将能量以光线的形式放出，实现发光的功能，增强了所述壳体10的使用趣味性。该光致发光薄膜12可利用物理气相沉积(PVD)技术形成于基体11的表面。
所述壳体10的制作方法，主要包括以下步骤：
(1)将基体11表面进行化学超声波清洗，如采用无水乙醇或丙酮对基体11进行超声波清洗，以除去基体11表面的油污。
(2)将基体11表面进行等离子体清洗，以进一步除去基体11表面的油污及氧化物等，以及改善基体11表面与后续形成的光致发光薄膜12的结合力。具体过程可为：将超声波清洗后的基体11放入一真空镀膜机中，抽真空该镀膜机的腔体至3.0×10-5Torr(1Torr＝133.32Pa)，然后通入流量为300～500sccm(标准毫升每分)的工作气体氩气(纯度为99.999％)，对基体11施加-300～-500V的偏压，使镀膜室中产生高频电压，使所述氩气发生离子化而产生氩气等离子体对基体11的表面进行物理轰击，而达到对基体11表面等离子体清洗的目的。所述等离子体清洗的时间可为3～20分钟。
(3)对基体11进行物理气相沉积，使基体11表面形成掺铟氧化锌薄膜。该物理气相沉积的具体过程为：基体11在真空镀膜机中经过等离子体清洗后，调节基体11的偏压至-100～-300V，并控制基体11的温度为20～300℃，向镀膜机的腔体通入流量为150～300sccm(标准状态毫升/分钟)的高纯氩气及流量为10～120sccm的氧气，接着开启溅镀靶锌靶，该锌靶可以是单一的锌金属，也可以是锌与稀有元素如锶、铕、铂等的一种或多种形成的合金，设置锌靶的功率为3～10kw(千瓦)，溅镀20～60min(分钟)，则基体11的表面将充分地覆盖一氧化锌膜。然后关闭锌靶的电源及停止通入氧气，开启溅镀靶铟靶溅镀5～10分钟，在氧化锌膜的部分表面沉积铟，使铟局部地掺杂在氧化锌膜中，从而在基体11表面形成掺铟的氧化锌薄膜，制得所述光致发光薄膜12。
所述的氧化锌膜在光照下可吸收能量，其电子从低轨跃迁至高轨，无光照后，电子从高轨回迁至低轨并以光能的形式释放能量，而出现发光的现象。而铟的掺杂可以提高氧化锌的电子从高轨回迁至低轨的传导性，从而提高了氧化锌的发光性能，使得光致发光薄膜12具有更强的发光性能，增强了壳体10的使用趣味性。
(4)将壳体从真空镀膜机中取出。
所述壳体10通过物理气相沉积的方法制作，工艺简单。

Claims (11)

1.一种光致发光薄膜，其特征在于：所述光致发光薄膜主要由掺铟氧化锌组成。
2.如权利要求1所述的光致发光薄膜，其特征在于：所述光致发光薄膜进一步包括一种或多种稀有元素。
3.如权利要求2所述的光致发光薄膜，其特征在于：所述稀有元素包括锶、铕、铂。
4.如权利要求1所述的光致发光薄膜，其特征在于：所述光致发光薄膜的厚度在500nm以内。
5.一种壳体，包括一基体及形成在基体上的一光致发光薄膜，其特征在于：所述光致发光薄膜主要由掺铟氧化锌组成。
6.如权利要求5所述的壳体，其特征在于：所述基体包括不锈钢、铜、钛、钛合金、铝、铝合金。
7.一种壳体的制作方法，包括以下步骤：
提供一基体，将基体表面进行清洗；
将基体进行物理气相沉积，形成一光致发光薄膜，该光致发光薄膜主要含有掺铟氧化锌。
8.如权利要求7所述的壳体的制作方法，其特征在于：所述清洗步骤包括化学超声波清洗与等离子体清洗中的至少一种。
9.如权利要求7所述的壳体的制作方法，其特征在于：所述物理气相沉积的步骤具体为：开启锌靶与通入氧气，锌靶的功率为3～10kw，溅镀20～60min，氧气流量为10～120sccm，使基体表面溅射形成氧化锌膜，然后关闭锌靶并停止通入氧气，接着开启铟靶溅镀5～10分钟，使氧化锌膜表面掺杂铟。
10.如权利要求9所述的壳体的制作方法，其特征在于：所述锌靶靶材为单一的锌金属。
11.如权利要求9所述的壳体的制作方法，其特征在于：所述锌靶靶材为锌与稀有元素的一种或多种形成的合金。
CN2010105082917A 2010-10-14 2010-10-14 光致发光薄膜、壳体及壳体的制作方法 Pending CN102448264A (zh)

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