KR20090028390A - 반도체 장치 - Google Patents
반도체 장치 Download PDFInfo
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- KR20090028390A KR20090028390A KR1020080029594A KR20080029594A KR20090028390A KR 20090028390 A KR20090028390 A KR 20090028390A KR 1020080029594 A KR1020080029594 A KR 1020080029594A KR 20080029594 A KR20080029594 A KR 20080029594A KR 20090028390 A KR20090028390 A KR 20090028390A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 142
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000012535 impurity Substances 0.000 claims description 31
- 230000005669 field effect Effects 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 239000002019 doping agent Substances 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 31
- 239000000969 carrier Substances 0.000 description 8
- 238000009826 distribution Methods 0.000 description 6
- 238000005468 ion implantation Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 230000007935 neutral effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
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- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
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- H01L29/0692—Surface layout
- H01L29/0696—Surface layout of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
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- H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
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- H01L29/42312—Gate electrodes for field effect devices
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- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H01L29/42312—Gate electrodes for field effect devices
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- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
Abstract
Description
Claims (6)
- 주표면을 가지는 반도체 기판과,상기 반도체 기판에 형성된 절연 게이트형 전계 효과부를 가지는 반도체 소자를 구비하고,상기 반도체 소자는,상기 주표면에 형성된 제1도전형의 제1의 영역과,상기 주표면에 형성된 제1도전형의 소스 영역과,상기 소스 영역에 인접하도록 상기 주표면에 형성된 제2도전형의 베이스 영역과,상기 베이스 영역과 인접하도록, 상기 베이스 영역을 끼워 상기 소스 영역과 대향하도록 상기 주표면에 형성되고, 상기 제1의 영역보다도 높은 불순물 농도를 가지는 제1도전형의 제2의 영역과,상기 소스 영역과 상기 제2의 영역 사이에 위치하는 상기 베이스 영역 위에 형성된 절연막과,상기 절연막 위에 형성된 게이트 전극을 포함하고,상기 제1의 영역은, 상기 주표면에 있어서, 상기 베이스 영역과 인접하도록, 상기 제2의 영역과 인접하도록 형성되어 있는 것을 특징으로 하는 반도체 장치.
- 제 1항에 있어서,상기 게이트 전극은, 상기 소스 영역과 상기 제2의 영역 사이에 위치하는 상기 베이스 영역의 하나의 영역 이외의 상기 베이스 영역의 다른 영역 위에 연장하여 형성된 것을 특징으로 하는 반도체 장치.
- 제 2항에 있어서,상기 베이스 영역의 상기 다른 영역 위에 형성된 상기 절연막의 두께는, 상기 베이스 영역의 상기 하나의 영역 위에 형성된 상기 절연막의 두께보다도 두꺼운 것을 특징으로 하는 반도체 장치.
- 제 1항에 있어서,상기 게이트 전극은, 상기 소스 영역과 상기 제2의 영역 사이에 위치하는 상기 베이스 영역 위에만 형성된 것을 특징으로 하는 반도체 장치.
- 제 1항에 있어서,상기 반도체 소자는 IGBT이며, 제2도전형의 콜렉터 영역을 더 가지는 것을 특징으로 하는 반도체 장치.
- 제 1항에 있어서,상기 반도체 소자는 MISFET인 것을 특징으로 하는 반도체 장치.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007238625A JP5246638B2 (ja) | 2007-09-14 | 2007-09-14 | 半導体装置 |
JPJP-P-2007-00238625 | 2007-09-14 |
Publications (2)
Publication Number | Publication Date |
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KR20090028390A true KR20090028390A (ko) | 2009-03-18 |
KR100955286B1 KR100955286B1 (ko) | 2010-04-30 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020080029594A KR100955286B1 (ko) | 2007-09-14 | 2008-03-31 | 반도체 장치 |
Country Status (5)
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US (1) | US7741655B2 (ko) |
JP (1) | JP5246638B2 (ko) |
KR (1) | KR100955286B1 (ko) |
CN (1) | CN101388406B (ko) |
DE (1) | DE102008015690B4 (ko) |
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US7889683B2 (en) * | 2006-11-03 | 2011-02-15 | Honeywell International Inc. | Non-destructive media access resolution for asynchronous traffic in a half-duplex braided-ring |
CN105633148B (zh) * | 2014-10-29 | 2019-05-17 | 比亚迪股份有限公司 | Mos型功率器件及其形成方法 |
JP7110821B2 (ja) * | 2018-08-22 | 2022-08-02 | 株式会社デンソー | スイッチング素子 |
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US4672407A (en) * | 1984-05-30 | 1987-06-09 | Kabushiki Kaisha Toshiba | Conductivity modulated MOSFET |
JPS6457675A (en) * | 1987-08-27 | 1989-03-03 | Nec Corp | Vertical field-effect transistor |
JPH0237777A (ja) * | 1988-07-27 | 1990-02-07 | Nec Corp | 縦型電界効果トランジスタ |
US4994871A (en) * | 1988-12-02 | 1991-02-19 | General Electric Company | Insulated gate bipolar transistor with improved latch-up current level and safe operating area |
JPH0329328A (ja) | 1989-06-26 | 1991-02-07 | Matsushita Electric Ind Co Ltd | 半導体装置及びその製造方法 |
JP2808871B2 (ja) * | 1990-09-17 | 1998-10-08 | 富士電機株式会社 | Mos型半導体素子の製造方法 |
JP2656740B2 (ja) | 1994-10-28 | 1997-09-24 | 山形日本電気株式会社 | 縦型電界効果トランジスタの製造方法 |
JP3170610B2 (ja) | 1995-04-11 | 2001-05-28 | シャープ株式会社 | 縦型電界効果トランジスタの製造方法 |
US5703383A (en) | 1995-04-11 | 1997-12-30 | Kabushiki Kaisha Toshiba | Power semiconductor device |
JPH10242458A (ja) | 1997-02-25 | 1998-09-11 | Toshiba Corp | 半導体装置 |
JP2000077663A (ja) * | 1998-09-02 | 2000-03-14 | Mitsubishi Electric Corp | 電界効果型半導体装置 |
US20030209741A1 (en) * | 2002-04-26 | 2003-11-13 | Wataru Saitoh | Insulated gate semiconductor device |
JP4576805B2 (ja) * | 2002-11-28 | 2010-11-10 | サンケン電気株式会社 | 絶縁ゲート型半導体素子及びその製造方法 |
JP4645034B2 (ja) * | 2003-02-06 | 2011-03-09 | 株式会社豊田中央研究所 | Iii族窒化物半導体を有する半導体素子 |
JP3906213B2 (ja) * | 2004-03-10 | 2007-04-18 | 株式会社東芝 | 半導体装置 |
JP4830263B2 (ja) * | 2004-04-26 | 2011-12-07 | 富士電機株式会社 | 高耐圧絶縁ゲート形バイポーラトランジスタ |
JP2006120952A (ja) * | 2004-10-22 | 2006-05-11 | Fuji Electric Holdings Co Ltd | Mis型半導体装置 |
US7397084B2 (en) * | 2005-04-01 | 2008-07-08 | Semiconductor Components Industries, L.L.C. | Semiconductor device having enhanced performance and method |
-
2007
- 2007-09-14 JP JP2007238625A patent/JP5246638B2/ja active Active
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- 2008-01-28 US US12/020,959 patent/US7741655B2/en active Active
- 2008-03-26 DE DE102008015690A patent/DE102008015690B4/de active Active
- 2008-03-31 CN CN2008100907051A patent/CN101388406B/zh active Active
- 2008-03-31 KR KR1020080029594A patent/KR100955286B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
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CN101388406B (zh) | 2011-07-06 |
KR100955286B1 (ko) | 2010-04-30 |
US7741655B2 (en) | 2010-06-22 |
DE102008015690A1 (de) | 2009-04-02 |
US20090072268A1 (en) | 2009-03-19 |
JP5246638B2 (ja) | 2013-07-24 |
JP2009071082A (ja) | 2009-04-02 |
CN101388406A (zh) | 2009-03-18 |
DE102008015690B4 (de) | 2012-12-13 |
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