KR20090009962A - 성막 장치, 성막 방법, 컴퓨터 프로그램 및 기억 매체 - Google Patents

성막 장치, 성막 방법, 컴퓨터 프로그램 및 기억 매체 Download PDF

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KR20090009962A
KR20090009962A KR1020087029964A KR20087029964A KR20090009962A KR 20090009962 A KR20090009962 A KR 20090009962A KR 1020087029964 A KR1020087029964 A KR 1020087029964A KR 20087029964 A KR20087029964 A KR 20087029964A KR 20090009962 A KR20090009962 A KR 20090009962A
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film
gas
transition metal
source gas
raw material
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Korean (ko)
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겐지 마츠모토
주니치 고이케
고지 네이시
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도쿄엘렉트론가부시키가이샤
고쿠리츠 다이가쿠 호진 도호쿠 다이가쿠
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Publication of KR20090009962A publication Critical patent/KR20090009962A/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/425—Barrier, adhesion or liner layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45529—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making a layer stack of alternating different compositions or gradient compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas
    • H—ELECTRICITY
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
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    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics
    • H10W20/034—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics bottomless barrier, adhesion or liner layers
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H—ELECTRICITY
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/052—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein
    • H10W20/0526—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by treatments not introducing additional elements therein by thermal treatment thereof
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/055—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition
    • H10W20/0552—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition by diffusing metallic dopants to react with dielectrics
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/056—Manufacture or treatment of conductive parts of the interconnections by filling conductive material into holes, grooves or trenches
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    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/074—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/076—Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches
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    • H10W72/00—Interconnections or connectors in packages
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    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/042—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers
    • H10W20/0425—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers the barrier, adhesion or liner layers being seed or nucleation layers comprising multiple stacked seed or nucleation layers

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020087029964A 2006-06-08 2007-06-08 성막 장치, 성막 방법, 컴퓨터 프로그램 및 기억 매체 Ceased KR20090009962A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JPJP-P-2006-159942 2006-06-08
JP2006159942 2006-06-08
JPJP-P-2007-148856 2007-06-05
JP2007148856A JP2008013848A (ja) 2006-06-08 2007-06-05 成膜装置及び成膜方法

Publications (1)

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KR20090009962A true KR20090009962A (ko) 2009-01-23

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KR1020087029964A Ceased KR20090009962A (ko) 2006-06-08 2007-06-08 성막 장치, 성막 방법, 컴퓨터 프로그램 및 기억 매체

Country Status (4)

Country Link
US (1) US20100233876A1 (https=)
JP (1) JP2008013848A (https=)
KR (1) KR20090009962A (https=)
WO (1) WO2007142329A1 (https=)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5076452B2 (ja) * 2006-11-13 2012-11-21 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5196467B2 (ja) * 2007-05-30 2013-05-15 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
US8102051B2 (en) * 2007-06-22 2012-01-24 Rohm Co., Ltd. Semiconductor device having an electrode and method for manufacturing the same
JP5366235B2 (ja) * 2008-01-28 2013-12-11 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
JP5343369B2 (ja) * 2008-03-03 2013-11-13 東京エレクトロン株式会社 半導体装置の製造方法、半導体製造装置及び記憶媒体
JP5820267B2 (ja) * 2008-03-21 2015-11-24 プレジデント アンド フェローズ オブ ハーバード カレッジ 配線用セルフアライン（自己整合）バリア層
US7863176B2 (en) * 2008-05-13 2011-01-04 Micron Technology, Inc. Low-resistance interconnects and methods of making same
JP2010073736A (ja) * 2008-09-16 2010-04-02 Rohm Co Ltd 半導体装置の製造方法
JP2010050359A (ja) * 2008-08-22 2010-03-04 Rohm Co Ltd 半導体装置の製造方法
JP2010098196A (ja) * 2008-10-17 2010-04-30 Hitachi Cable Ltd 配線構造及び配線構造の製造方法
CN103700704B (zh) 2008-11-07 2017-07-11 株式会社半导体能源研究所 半导体器件
JP5411535B2 (ja) * 2009-03-11 2014-02-12 東京エレクトロン株式会社 半導体装置の製造方法
JP5487748B2 (ja) * 2009-06-16 2014-05-07 東京エレクトロン株式会社 バリヤ層、成膜方法及び処理システム
JP5522979B2 (ja) * 2009-06-16 2014-06-18 国立大学法人東北大学 成膜方法及び処理システム
US8168528B2 (en) * 2009-06-18 2012-05-01 Kabushiki Kaisha Toshiba Restoration method using metal for better CD controllability and Cu filing
JP5466890B2 (ja) * 2009-06-18 2014-04-09 東京エレクトロン株式会社 基板処理方法、基板処理装置及びコンピュータ読み取り可能な記憶媒体
JP5507909B2 (ja) 2009-07-14 2014-05-28 東京エレクトロン株式会社 成膜方法
AU2010310750B2 (en) 2009-10-23 2015-02-26 President And Fellows Of Harvard College Self-aligned barrier and capping layers for interconnects
KR102037048B1 (ko) 2009-11-13 2019-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
WO2011132625A1 (en) 2010-04-23 2011-10-27 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
JP5429078B2 (ja) 2010-06-28 2014-02-26 東京エレクトロン株式会社 成膜方法及び処理システム
JP6041464B2 (ja) * 2011-03-03 2016-12-07 大陽日酸株式会社 金属薄膜の製膜方法、および金属薄膜の製膜装置
US8461683B2 (en) * 2011-04-01 2013-06-11 Intel Corporation Self-forming, self-aligned barriers for back-end interconnects and methods of making same
SG11201510292VA (en) 2013-07-02 2016-01-28 Ultratech Inc Formation of heteroepitaxial layers with rapid thermal processing to remove lattice dislocations
US20150155313A1 (en) 2013-11-29 2015-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US10825724B2 (en) * 2014-04-25 2020-11-03 Taiwan Semiconductor Manufacturing Company Metal contact structure and method of forming the same in a semiconductor device
US9613906B2 (en) * 2014-06-23 2017-04-04 GlobalFoundries, Inc. Integrated circuits including modified liners and methods for fabricating the same
US9613856B1 (en) 2015-09-18 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming metal interconnection
JP6242933B2 (ja) * 2016-03-31 2017-12-06 株式会社日立国際電気 基板処理装置、半導体装置の製造方法およびプログラム
US10760156B2 (en) 2017-10-13 2020-09-01 Honeywell International Inc. Copper manganese sputtering target
US10727118B2 (en) * 2017-11-30 2020-07-28 Taiwan Semiconductor Manufacturing Co., Ltd. Method for manufacturing semiconductor device and pre-clean apparatus for semiconductor device
US11035036B2 (en) 2018-02-01 2021-06-15 Honeywell International Inc. Method of forming copper alloy sputtering targets with refined shape and microstructure
US11004736B2 (en) * 2019-07-19 2021-05-11 International Business Machines Corporation Integrated circuit having a single damascene wiring network
KR102867763B1 (ko) 2019-11-21 2025-10-14 삼성전자주식회사 반도체 장치의 제조방법 및 반도체 장치의 제조 설비

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3840650B2 (ja) * 1998-01-21 2006-11-01 株式会社トリケミカル研究所 配線用銅合金膜形成材料および配線用銅合金膜形成方法
JP3449960B2 (ja) * 2000-02-25 2003-09-22 沖電気工業株式会社 半導体装置の製造方法
US6491978B1 (en) * 2000-07-10 2002-12-10 Applied Materials, Inc. Deposition of CVD layers for copper metallization using novel metal organic chemical vapor deposition (MOCVD) precursors
JP4478038B2 (ja) * 2004-02-27 2010-06-09 株式会社半導体理工学研究センター 半導体装置及びその製造方法
JP4651955B2 (ja) * 2004-03-03 2011-03-16 東京エレクトロン株式会社 成膜方法
JP5068925B2 (ja) * 2004-09-03 2012-11-07 Ｊｘ日鉱日石金属株式会社 スパッタリングターゲット
JP2006128288A (ja) * 2004-10-27 2006-05-18 Tokyo Electron Ltd 成膜方法、半導体装置の製造方法、半導体装置、プログラムおよび記録媒体
WO2006085447A1 (ja) * 2005-02-10 2006-08-17 Tokyo Electron Limited 薄膜の積層構造、その形成方法、成膜装置及び記憶媒体
JP4236201B2 (ja) * 2005-08-30 2009-03-11 富士通マイクロエレクトロニクス株式会社 半導体装置の製造方法
US20070264816A1 (en) * 2006-05-12 2007-11-15 Lavoie Adrien R Copper alloy layer for integrated circuit interconnects
US20080026576A1 (en) * 2006-07-31 2008-01-31 Rohm And Haas Electronic Materials Llc Organometallic compounds
US20080223287A1 (en) * 2007-03-15 2008-09-18 Lavoie Adrien R Plasma enhanced ALD process for copper alloy seed layers

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