KR20080052397A - 계측장치 및 이것을 구비하는 투영 노광장치 - Google Patents

계측장치 및 이것을 구비하는 투영 노광장치 Download PDF

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Publication number
KR20080052397A
KR20080052397A KR1020070123237A KR20070123237A KR20080052397A KR 20080052397 A KR20080052397 A KR 20080052397A KR 1020070123237 A KR1020070123237 A KR 1020070123237A KR 20070123237 A KR20070123237 A KR 20070123237A KR 20080052397 A KR20080052397 A KR 20080052397A
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KR
South Korea
Prior art keywords
mark
substrate
exposure apparatus
projection exposure
inspection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
KR1020070123237A
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English (en)
Korean (ko)
Inventor
타카히로 마츠모토
Original Assignee
캐논 가부시끼가이샤
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Application filed by 캐논 가부시끼가이샤 filed Critical 캐논 가부시끼가이샤
Publication of KR20080052397A publication Critical patent/KR20080052397A/ko
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70641—Focus
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03B—APPARATUS OR ARRANGEMENTS FOR TAKING PHOTOGRAPHS OR FOR PROJECTING OR VIEWING THEM; APPARATUS OR ARRANGEMENTS EMPLOYING ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ACCESSORIES THEREFOR
    • G03B27/00—Photographic printing apparatus
    • G03B27/32—Projection printing apparatus, e.g. enlarger, copying camera
    • G03B27/52—Details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70681—Metrology strategies
    • G03F7/70683—Mark designs
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706835—Metrology information management or control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706845—Calibration, e.g. tool-to-tool calibration, beam alignment, spot position or focus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706849—Irradiation branch, e.g. optical system details, illumination mode or polarisation control
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/706843—Metrology apparatus
    • G03F7/706851—Detection branch, e.g. detector arrangements, polarisation control, wavelength control or dark/bright field detection
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70716—Stages
    • G03F7/70725—Stages control
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W46/00—Marks applied to devices, e.g. for alignment or identification

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Length Measuring Devices By Optical Means (AREA)
KR1020070123237A 2006-12-06 2007-11-30 계측장치 및 이것을 구비하는 투영 노광장치 Ceased KR20080052397A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2006-00329915 2006-12-06
JP2006329915A JP5084239B2 (ja) 2006-12-06 2006-12-06 計測装置、露光装置並びにデバイス製造方法

Publications (1)

Publication Number Publication Date
KR20080052397A true KR20080052397A (ko) 2008-06-11

Family

ID=39497572

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020070123237A Ceased KR20080052397A (ko) 2006-12-06 2007-11-30 계측장치 및 이것을 구비하는 투영 노광장치

Country Status (4)

Country Link
US (1) US8537334B2 (https=)
JP (1) JP5084239B2 (https=)
KR (1) KR20080052397A (https=)
TW (1) TWI409595B (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9570364B2 (en) 2014-08-19 2017-02-14 Samsung Electronics Co., Ltd. Method of detecting focus shift in lithography process, method of analyzing error of transferred pattern using the same and method of manufacturing semiconductor device using the methods
US10274835B2 (en) 2012-12-20 2019-04-30 Nikon Corporation Evaluation method and device, processing method, and exposure system

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100741985B1 (ko) * 2006-07-13 2007-07-23 삼성전자주식회사 기준 이미지 설정 방법 및 장치, 및 이를 이용한 패턴 검사방법 및 장치
JP5199789B2 (ja) 2008-08-25 2013-05-15 株式会社ディスコ レーザー加工装置及びレーザー加工方法
JP2010098143A (ja) * 2008-10-16 2010-04-30 Canon Inc 露光装置およびデバイス製造方法
NL2017123A (en) * 2015-07-24 2017-01-24 Asml Netherlands Bv Inspection apparatus, inspection method, lithographic apparatus and manufacturing method
ES2943124T3 (es) * 2020-07-02 2023-06-09 Bobst Bielefeld Gmbh Placa de impresión, método para detectar una posición de una placa de impresión, unidad de control para un sistema para detectar una posición de una placa de impresión, sistema para detectar una posición de una placa de impresión, y programa informático

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2580668B2 (ja) 1988-01-21 1997-02-12 株式会社ニコン 露光方法、露光条件測定方法及ぴパターン測定方法
US4908656A (en) 1988-01-21 1990-03-13 Nikon Corporation Method of dimension measurement for a pattern formed by exposure apparatus, and method for setting exposure conditions and for inspecting exposure precision
JPH05152186A (ja) * 1991-05-01 1993-06-18 Canon Inc 測定装置及び露光装置及び露光装置の位置決め方法
JP3265668B2 (ja) * 1993-01-13 2002-03-11 株式会社ニコン ベストフォーカス位置の算出方法
US5654553A (en) * 1993-06-10 1997-08-05 Nikon Corporation Projection exposure apparatus having an alignment sensor for aligning a mask image with a substrate
US5754299A (en) * 1995-01-13 1998-05-19 Nikon Corporation Inspection apparatus and method for optical system, exposure apparatus provided with the inspection apparatus, and alignment apparatus and optical system thereof applicable to the exposure apparatus
JPH08264409A (ja) * 1995-03-20 1996-10-11 Hitachi Ltd 半導体集積回路装置の製造方法
KR0164078B1 (ko) * 1995-12-29 1998-12-15 김주용 노광 에너지와 포커스를 모니터 하는 오버레이 마크
US5757505A (en) * 1996-02-16 1998-05-26 Nikon Corporation Exposure apparatus
US5835227A (en) * 1997-03-14 1998-11-10 Nikon Precision Inc. Method and apparatus for determining performance characteristics in lithographic tools
US5965309A (en) 1997-08-28 1999-10-12 International Business Machines Corporation Focus or exposure dose parameter control system using tone reversing patterns
JP4109765B2 (ja) * 1998-09-14 2008-07-02 キヤノン株式会社 結像性能評価方法
CN1309017C (zh) * 1998-11-18 2007-04-04 株式会社尼康 曝光方法和装置
JP4329146B2 (ja) * 1999-02-04 2009-09-09 株式会社ニコン 位置検出装置及び方法、並びに露光装置
JP2001100392A (ja) * 1999-09-28 2001-04-13 Toshiba Corp フォーカスモニタ用マスク及びフォーカスモニタ方法
US6440616B1 (en) 1999-09-28 2002-08-27 Kabushiki Kaisha Toshiba Mask and method for focus monitoring
JP3927774B2 (ja) * 2000-03-21 2007-06-13 キヤノン株式会社 計測方法及びそれを用いた投影露光装置
JP2001291752A (ja) 2000-04-05 2001-10-19 Canon Inc 異物検査方法及び装置、及び該検査方法を用いた露光装置
JP2001345250A (ja) 2000-06-01 2001-12-14 Canon Inc 位置合せ方法、位置合せ装置、プロファイラ、露光装置、半導体デバイス製造方法、半導体製造工場、および露光装置の保守方法
JP3297423B2 (ja) 2000-08-09 2002-07-02 株式会社東芝 フォーカステストマスク、並びにそれを用いたフォーカス及び収差の測定方法
JP3906035B2 (ja) * 2001-03-29 2007-04-18 株式会社東芝 半導体製造装置の制御方法
TWI225665B (en) 2001-10-17 2004-12-21 Canon Kk Apparatus control system, apparatus control method, semiconductor exposure apparatus, semiconductor exposure apparatus control method and semiconductor device manufacturing method
JP3839306B2 (ja) 2001-11-08 2006-11-01 株式会社ルネサステクノロジ 半導体装置の製造方法および製造システム
JP4154197B2 (ja) * 2002-09-20 2008-09-24 キヤノン株式会社 位置検出方法、位置検出装置及び露光装置
JP4095391B2 (ja) * 2002-09-24 2008-06-04 キヤノン株式会社 位置検出方法
JP2004356193A (ja) * 2003-05-27 2004-12-16 Canon Inc 露光装置及び露光方法
US7253885B2 (en) 2003-12-05 2007-08-07 Canon Kabushiki Kaisha Wavelength selecting method, position detecting method and apparatus, exposure method and apparatus, and device manufacturing method
JP4516826B2 (ja) * 2004-11-15 2010-08-04 Ｏｋｉセミコンダクタ株式会社 フォ−カスモニタ方法
JP4658589B2 (ja) * 2004-12-28 2011-03-23 Ｏｋｉセミコンダクタ株式会社 半導体装置の製造方法
US7642019B2 (en) 2005-04-15 2010-01-05 Samsung Electronics Co., Ltd. Methods for monitoring and adjusting focus variation in a photolithographic process using test features printed from photomask test pattern images; and machine readable program storage device having instructions therefore

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10274835B2 (en) 2012-12-20 2019-04-30 Nikon Corporation Evaluation method and device, processing method, and exposure system
US9570364B2 (en) 2014-08-19 2017-02-14 Samsung Electronics Co., Ltd. Method of detecting focus shift in lithography process, method of analyzing error of transferred pattern using the same and method of manufacturing semiconductor device using the methods

Also Published As

Publication number Publication date
JP2008147258A (ja) 2008-06-26
US20080137052A1 (en) 2008-06-12
US8537334B2 (en) 2013-09-17
JP5084239B2 (ja) 2012-11-28
TW200842520A (en) 2008-11-01
TWI409595B (zh) 2013-09-21

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