KR20080035865A - 반도체 발광 소자 - Google Patents

반도체 발광 소자 Download PDF

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Publication number
KR20080035865A
KR20080035865A KR1020060102465A KR20060102465A KR20080035865A KR 20080035865 A KR20080035865 A KR 20080035865A KR 1020060102465 A KR1020060102465 A KR 1020060102465A KR 20060102465 A KR20060102465 A KR 20060102465A KR 20080035865 A KR20080035865 A KR 20080035865A
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KR
South Korea
Prior art keywords
layer
type contact
quantum well
contact layer
emitting device
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Ceased
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KR1020060102465A
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English (en)
Korean (ko)
Inventor
유한열
Original Assignee
삼성전자주식회사
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Application filed by 삼성전자주식회사 filed Critical 삼성전자주식회사
Priority to KR1020060102465A priority Critical patent/KR20080035865A/ko
Priority to US11/822,447 priority patent/US7812338B2/en
Priority to JP2007259068A priority patent/JP2008103711A/ja
Publication of KR20080035865A publication Critical patent/KR20080035865A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/811—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions
    • H10H20/812—Bodies having quantum effect structures or superlattices, e.g. tunnel junctions within the light-emitting regions, e.g. having quantum confinement structures
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Biophysics (AREA)
  • Optics & Photonics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Semiconductor Lasers (AREA)
KR1020060102465A 2006-10-20 2006-10-20 반도체 발광 소자 Ceased KR20080035865A (ko)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020060102465A KR20080035865A (ko) 2006-10-20 2006-10-20 반도체 발광 소자
US11/822,447 US7812338B2 (en) 2006-10-20 2007-07-06 Semiconductor light emitting device
JP2007259068A JP2008103711A (ja) 2006-10-20 2007-10-02 半導体発光素子

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060102465A KR20080035865A (ko) 2006-10-20 2006-10-20 반도체 발광 소자

Publications (1)

Publication Number Publication Date
KR20080035865A true KR20080035865A (ko) 2008-04-24

Family

ID=39317060

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020060102465A Ceased KR20080035865A (ko) 2006-10-20 2006-10-20 반도체 발광 소자

Country Status (3)

Country Link
US (1) US7812338B2 (enExample)
JP (1) JP2008103711A (enExample)
KR (1) KR20080035865A (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7915607B2 (en) 2008-10-01 2011-03-29 Samsung Led Co., Ltd. Nitride semiconductor device
KR20120007383A (ko) * 2010-07-14 2012-01-20 엘지이노텍 주식회사 발광 소자
KR20140019634A (ko) * 2012-08-06 2014-02-17 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR20140063318A (ko) * 2012-11-16 2014-05-27 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR20140119714A (ko) * 2012-01-31 2014-10-10 소이텍 향상된 전하 캐리어들의 분포를 갖는 광활성 장치들 및 그 형성 방법들
CN105047773A (zh) * 2012-03-01 2015-11-11 财团法人工业技术研究院 发光二极管
KR20170000086A (ko) * 2015-06-23 2017-01-02 엘지이노텍 주식회사 발광 소자
KR101959141B1 (ko) * 2017-11-30 2019-03-15 주식회사 우리로 애벌란치 포토 다이오드

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WO2009139239A1 (ja) * 2008-05-14 2009-11-19 日本電気株式会社 窒化物半導体レーザ及びその製造方法
JP5258507B2 (ja) * 2008-10-27 2013-08-07 ナイトライド・セミコンダクター株式会社 窒化ガリウム系発光装置の製造方法
JP2011054834A (ja) * 2009-09-03 2011-03-17 Sharp Corp 窒化物半導体レーザ素子
KR20110057541A (ko) * 2009-11-24 2011-06-01 삼성엘이디 주식회사 질화물 반도체 발광소자
US8575592B2 (en) * 2010-02-03 2013-11-05 Cree, Inc. Group III nitride based light emitting diode structures with multiple quantum well structures having varying well thicknesses
JP4960465B2 (ja) * 2010-02-16 2012-06-27 株式会社東芝 半導体発光素子
WO2012078849A2 (en) * 2010-12-08 2012-06-14 Sensor Electronic Technology, Inc. Light emitting device with varying barriers
KR101136882B1 (ko) * 2011-03-15 2012-04-20 광주과학기술원 질화물 반도체 기반의 태양전지 및 그 제조방법
JP6081709B2 (ja) * 2011-03-25 2017-02-15 エルジー イノテック カンパニー リミテッド 発光素子
JP5737111B2 (ja) * 2011-03-30 2015-06-17 豊田合成株式会社 Ｉｉｉ族窒化物半導体発光素子
CN102820395B (zh) * 2011-06-07 2015-02-18 山东华光光电子有限公司 一种采用势垒高度渐变量子垒的led结构及其制备方法
KR101916020B1 (ko) * 2011-07-11 2018-11-07 엘지이노텍 주식회사 발광소자, 발광 소자 제조방법 및 발광 소자 패키지
WO2013015035A1 (ja) * 2011-07-26 2013-01-31 日亜化学工業株式会社 半導体発光素子
US9385271B2 (en) 2011-08-11 2016-07-05 Sensor Electronic Technology, Inc. Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
US8787418B2 (en) * 2011-08-11 2014-07-22 Sensor Electronic Technology, Inc. Emitting device with compositional and doping inhomogeneities in semiconductor layers
US8879598B2 (en) 2011-08-11 2014-11-04 Sensor Electronic Technology, Inc. Emitting device with compositional and doping inhomogeneities in semiconductor layers
US10411156B2 (en) 2011-08-11 2019-09-10 Sensor Electronic Technology, Inc. Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
US9595634B2 (en) 2011-08-11 2017-03-14 Sensor Electronic Technology, Inc. Device with transparent and higher conductive regions in lateral cross section of semiconductor layer
JP5868650B2 (ja) * 2011-10-11 2016-02-24 株式会社東芝 半導体発光素子
JP5912564B2 (ja) * 2012-01-23 2016-04-27 スタンレー電気株式会社 ＧａＮ系半導体発光素子
FR2986661B1 (fr) * 2012-02-08 2014-09-05 Soitec Silicon On Insulator Dispositifs photoactifs avec une repartition amelioree des porteurs de charge, et procedes de formation de ces dispositifs
US8471243B1 (en) 2012-01-31 2013-06-25 Soitec Photoactive devices with improved distribution of charge carriers, and methods of forming same
US8686398B2 (en) 2012-03-02 2014-04-01 Kabushiki Kaisha Toshiba Semiconductor light emitting device
US9269876B2 (en) 2012-03-06 2016-02-23 Soraa, Inc. Light emitting diodes with low refractive index material layers to reduce light guiding effects
JP2013214700A (ja) * 2012-03-07 2013-10-17 Toshiba Corp 半導体発光素子
WO2014061692A1 (ja) 2012-10-19 2014-04-24 シャープ株式会社 窒化物半導体発光素子
FR3004005B1 (fr) * 2013-03-28 2016-11-25 Commissariat Energie Atomique Diode electroluminescente a multiples puits quantiques et jonction p-n asymetrique
DE102013107969B4 (de) * 2013-07-25 2020-04-09 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
FR3012675B1 (fr) * 2013-10-25 2015-12-25 Commissariat Energie Atomique Dispositif emissif lumineux, dispositif et procede d'ajustement d'une emission lumineuse d'une diode electroluminescente
JP2015126024A (ja) * 2013-12-25 2015-07-06 株式会社豊田自動織機 半導体基板および半導体基板の製造方法
TWI689109B (zh) * 2014-09-04 2020-03-21 南韓商首爾偉傲世有限公司 垂直式紫外線發光裝置及其製造方法
JP2015053531A (ja) * 2014-12-17 2015-03-19 株式会社東芝 半導体発光素子
DE102015100029A1 (de) * 2015-01-05 2016-07-07 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
JP2016219547A (ja) * 2015-05-18 2016-12-22 ローム株式会社 半導体発光素子
TWI577042B (zh) * 2015-07-15 2017-04-01 南臺科技大學 發光二極體晶片及數據發射及接收裝置
US10396240B2 (en) * 2015-10-08 2019-08-27 Ostendo Technologies, Inc. III-nitride semiconductor light emitting device having amber-to-red light emission (>600 nm) and a method for making same
KR102477094B1 (ko) 2016-01-08 2022-12-13 삼성전자주식회사 비대칭 다준위 에너지를 갖는 3중 연결 양자우물 구조를 포함하는 광학 소자
JP6387978B2 (ja) * 2016-02-09 2018-09-12 日亜化学工業株式会社 窒化物半導体発光素子
CN105932126A (zh) * 2016-05-26 2016-09-07 湘能华磊光电股份有限公司 基于有源层提高发光二极管亮度的外延生长方法
CN107086258B (zh) * 2017-04-18 2019-05-14 安徽三安光电有限公司 一种多量子阱结构及其发光二极管
KR20190019539A (ko) 2017-08-18 2019-02-27 삼성전자주식회사 발광 소자 및 발광소자 패키지
US10218152B1 (en) * 2017-08-22 2019-02-26 Sharp Kabushiki Kaisha Semiconductor laser diode with low threshold current
JP6729644B2 (ja) * 2018-08-08 2020-07-22 日亜化学工業株式会社 窒化物半導体発光素子
DE112019004126T5 (de) * 2018-08-16 2021-05-06 Sony Corporation Lichtemittierende vorrichtung
DE102019126506A1 (de) 2019-10-01 2021-04-01 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optoelektronischen halbleiterchips und optoelektronischer halbleiterchip
JP7469677B2 (ja) * 2019-11-26 2024-04-17 日亜化学工業株式会社 窒化物半導体素子
JP2021090043A (ja) * 2019-12-03 2021-06-10 シャープ福山レーザー株式会社 ３族窒化物ベースレーザダイオード
CN111641109B (zh) * 2020-06-09 2021-06-01 苏州长光华芯光电技术股份有限公司 一种多有源区级联的半导体激光器
JP7319559B2 (ja) * 2020-12-23 2023-08-02 日亜化学工業株式会社 窒化物半導体発光素子
WO2024105723A1 (ja) * 2022-11-14 2024-05-23 日本電信電話株式会社 多重量子井戸構造、半導体レーザおよび多重量子井戸構造の製造方法
KR20240071494A (ko) * 2022-11-15 2024-05-23 삼성디스플레이 주식회사 발광 소자, 이를 포함하는 표시 장치, 및 발광 소자의 제조 방법

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7915607B2 (en) 2008-10-01 2011-03-29 Samsung Led Co., Ltd. Nitride semiconductor device
KR20120007383A (ko) * 2010-07-14 2012-01-20 엘지이노텍 주식회사 발광 소자
KR20140119714A (ko) * 2012-01-31 2014-10-10 소이텍 향상된 전하 캐리어들의 분포를 갖는 광활성 장치들 및 그 형성 방법들
CN105047773A (zh) * 2012-03-01 2015-11-11 财团法人工业技术研究院 发光二极管
KR20140019634A (ko) * 2012-08-06 2014-02-17 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR20140063318A (ko) * 2012-11-16 2014-05-27 엘지이노텍 주식회사 발광 소자 및 발광 소자 패키지
KR20170000086A (ko) * 2015-06-23 2017-01-02 엘지이노텍 주식회사 발광 소자
KR101959141B1 (ko) * 2017-11-30 2019-03-15 주식회사 우리로 애벌란치 포토 다이오드

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Publication number Publication date
US20080093593A1 (en) 2008-04-24
JP2008103711A (ja) 2008-05-01
US7812338B2 (en) 2010-10-12

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