KR20070102623A - 이중 주파수 rf 신호들을 이용한 플라즈마 생성 및 제어 - Google Patents

이중 주파수 rf 신호들을 이용한 플라즈마 생성 및 제어 Download PDF

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Publication number
KR20070102623A
KR20070102623A KR1020077021009A KR20077021009A KR20070102623A KR 20070102623 A KR20070102623 A KR 20070102623A KR 1020077021009 A KR1020077021009 A KR 1020077021009A KR 20077021009 A KR20077021009 A KR 20077021009A KR 20070102623 A KR20070102623 A KR 20070102623A
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KR
South Korea
Prior art keywords
frequency
plasma
mhz
processing chamber
frequencies
Prior art date
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Ceased
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KR1020077021009A
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English (en)
Korean (ko)
Inventor
스티븐 샤논
알렉산더 파터슨
테오도로스 파나고폴로스
존 홀랜드
데니스 그리마드
다니엘 호프만
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20070102623A publication Critical patent/KR20070102623A/ko
Ceased legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/32137Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155Frequency modulation
    • H01J37/32165Plural frequencies
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67063Apparatus for fluid treatment for etching
    • H01L21/67069Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
KR1020077021009A 2005-05-09 2006-05-04 이중 주파수 rf 신호들을 이용한 플라즈마 생성 및 제어 Ceased KR20070102623A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US67904205P 2005-05-09 2005-05-09
US60/679,042 2005-05-09
US11/416,468 US7510665B2 (en) 2003-08-15 2006-05-02 Plasma generation and control using dual frequency RF signals
US11/416,468 2006-05-02

Publications (1)

Publication Number Publication Date
KR20070102623A true KR20070102623A (ko) 2007-10-18

Family

ID=37396865

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020077021009A Ceased KR20070102623A (ko) 2005-05-09 2006-05-04 이중 주파수 rf 신호들을 이용한 플라즈마 생성 및 제어

Country Status (5)

Country Link
US (1) US7510665B2 (enExample)
JP (1) JP2008544480A (enExample)
KR (1) KR20070102623A (enExample)
TW (1) TWI344321B (enExample)
WO (1) WO2006121744A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12437968B2 (en) 2020-09-02 2025-10-07 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100362619C (zh) 2005-08-05 2008-01-16 中微半导体设备(上海)有限公司 真空反应室的射频匹配耦合网络及其配置方法
US7758763B2 (en) * 2006-10-31 2010-07-20 Applied Materials, Inc. Plasma for resist removal and facet control of underlying features
US9272359B2 (en) 2008-05-30 2016-03-01 Colorado State University Research Foundation Liquid-gas interface plasma device
US8575843B2 (en) 2008-05-30 2013-11-05 Colorado State University Research Foundation System, method and apparatus for generating plasma
EP2297377B1 (en) 2008-05-30 2017-12-27 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
JP5398058B2 (ja) * 2008-10-31 2014-01-29 株式会社ダイヘン 高周波電源装置
US20100326602A1 (en) * 2009-06-30 2010-12-30 Intevac, Inc. Electrostatic chuck
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
JP5553460B2 (ja) 2010-03-31 2014-07-16 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
US9089319B2 (en) 2010-07-22 2015-07-28 Plasma Surgical Investments Limited Volumetrically oscillating plasma flows
JP5916056B2 (ja) * 2010-08-23 2016-05-11 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
US9284210B2 (en) * 2014-03-31 2016-03-15 Corning Incorporated Methods and apparatus for material processing using dual source cyclonic plasma reactor
US10312048B2 (en) * 2016-12-12 2019-06-04 Applied Materials, Inc. Creating ion energy distribution functions (IEDF)
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
CA3191050A1 (en) * 2020-08-28 2022-03-03 Nikolay Suslov Systems, methods, and devices for generating predominantly radially expanded plasma flow

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
DE3733135C1 (de) * 1987-10-01 1988-09-22 Leybold Ag Vorrichtung zum Beschichten oder AEtzen mittels eines Plasmas
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
JPH04901A (ja) * 1990-04-18 1992-01-06 Mitsubishi Electric Corp プラズマ装置の高周波給電方法及び装置
US5065118A (en) * 1990-07-26 1991-11-12 Applied Materials, Inc. Electronically tuned VHF/UHF matching network
US5280154A (en) 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
KR100324792B1 (ko) * 1993-03-31 2002-06-20 히가시 데쓰로 플라즈마처리장치
KR100302167B1 (ko) * 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
JP2654340B2 (ja) * 1993-11-11 1997-09-17 株式会社フロンテック 基板表面電位測定方法及びプラズマ装置
US5512130A (en) * 1994-03-09 1996-04-30 Texas Instruments Incorporated Method and apparatus of etching a clean trench in a semiconductor material
DE69509046T2 (de) * 1994-11-30 1999-10-21 Applied Materials, Inc. Plasmareaktoren zur Behandlung von Halbleiterscheiben
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
JP3119172B2 (ja) * 1995-09-13 2000-12-18 日新電機株式会社 プラズマcvd法及び装置
JPH0982495A (ja) * 1995-09-18 1997-03-28 Toshiba Corp プラズマ生成装置およびプラズマ生成方法
US5817534A (en) * 1995-12-04 1998-10-06 Applied Materials, Inc. RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
JP3808973B2 (ja) 1996-05-15 2006-08-16 株式会社ダイヘン プラズマ処理装置
US6500314B1 (en) * 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US6048435A (en) * 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
JP3220383B2 (ja) * 1996-07-23 2001-10-22 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
US6126778A (en) * 1998-07-22 2000-10-03 Micron Technology, Inc. Beat frequency modulation for plasma generation
US5985375A (en) * 1998-09-03 1999-11-16 Micron Technology, Inc. Method for pulsed-plasma enhanced vapor deposition
US6642149B2 (en) * 1998-09-16 2003-11-04 Tokyo Electron Limited Plasma processing method
US6222718B1 (en) * 1998-11-12 2001-04-24 Lam Research Corporation Integrated power modules for plasma processing systems
US6196855B1 (en) * 1999-08-13 2001-03-06 Umax Data Systems Inc. Guiding mechanism for guiding flat cable between two traveling modules
US6193855B1 (en) 1999-10-19 2001-02-27 Applied Materials, Inc. Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6507155B1 (en) * 2000-04-06 2003-01-14 Applied Materials Inc. Inductively coupled plasma source with controllable power deposition
US6506289B2 (en) * 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
JP2002246368A (ja) 2001-02-14 2002-08-30 Anelva Corp ウェハー表面径方向均一プラズマを用いるウェハー処理システム
JP2003073836A (ja) 2001-08-28 2003-03-12 Canon Inc 真空処理方法及び真空処理装置
US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
TWI241868B (en) * 2002-02-06 2005-10-11 Matsushita Electric Industrial Co Ltd Plasma processing method and apparatus
US7431857B2 (en) * 2003-08-15 2008-10-07 Applied Materials, Inc. Plasma generation and control using a dual frequency RF source
US7838430B2 (en) * 2003-10-28 2010-11-23 Applied Materials, Inc. Plasma control using dual cathode frequency mixing
US20050241762A1 (en) * 2004-04-30 2005-11-03 Applied Materials, Inc. Alternating asymmetrical plasma generation in a process chamber

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12437968B2 (en) 2020-09-02 2025-10-07 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method

Also Published As

Publication number Publication date
US20060266735A1 (en) 2006-11-30
WO2006121744A1 (en) 2006-11-16
JP2008544480A (ja) 2008-12-04
US7510665B2 (en) 2009-03-31
TW200704289A (en) 2007-01-16
TWI344321B (en) 2011-06-21

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