JP2008544480A - ２周波のｒｆ信号を用いたプラズマの生成及び制御 - Google Patents

２周波のｒｆ信号を用いたプラズマの生成及び制御 Download PDF

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Publication number
JP2008544480A
JP2008544480A JP2008511180A JP2008511180A JP2008544480A JP 2008544480 A JP2008544480 A JP 2008544480A JP 2008511180 A JP2008511180 A JP 2008511180A JP 2008511180 A JP2008511180 A JP 2008511180A JP 2008544480 A JP2008544480 A JP 2008544480A
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frequency
plasma
frequencies
mhz
sheath
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Japanese (ja)
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JP2008544480A5 (enExample
Inventor
スティーブン シャンノン
アレキサンダー パターソン
セオドロス パナゴポウロス
ジョン ホーランド
デニス グリマード
ダニエル ホフマン
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Applied Materials Inc
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Applied Materials Inc
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Publication of JP2008544480A publication Critical patent/JP2008544480A/ja
Publication of JP2008544480A5 publication Critical patent/JP2008544480A5/ja
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2008511180A 2005-05-09 2006-05-04 ２周波のｒｆ信号を用いたプラズマの生成及び制御 Pending JP2008544480A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US67904205P 2005-05-09 2005-05-09
US11/416,468 US7510665B2 (en) 2003-08-15 2006-05-02 Plasma generation and control using dual frequency RF signals
PCT/US2006/017075 WO2006121744A1 (en) 2005-05-09 2006-05-04 Plasma generation and control using dual frequency rf signals

Publications (2)

Publication Number Publication Date
JP2008544480A true JP2008544480A (ja) 2008-12-04
JP2008544480A5 JP2008544480A5 (enExample) 2009-06-25

Family

ID=37396865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008511180A Pending JP2008544480A (ja) 2005-05-09 2006-05-04 ２周波のｒｆ信号を用いたプラズマの生成及び制御

Country Status (5)

Country Link
US (1) US7510665B2 (enExample)
JP (1) JP2008544480A (enExample)
KR (1) KR20070102623A (enExample)
TW (1) TWI344321B (enExample)
WO (1) WO2006121744A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012069921A (ja) * 2010-08-23 2012-04-05 Tokyo Electron Ltd プラズマ処理方法及びプラズマ処理装置
JP2017513195A (ja) * 2014-03-31 2017-05-25 コーニング インコーポレイテッド デュアルソースサイクロンプラズマ反応器を用いたガラスバッチ処理方法及び装置

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CN100362619C (zh) 2005-08-05 2008-01-16 中微半导体设备(上海)有限公司 真空反应室的射频匹配耦合网络及其配置方法
US7758763B2 (en) * 2006-10-31 2010-07-20 Applied Materials, Inc. Plasma for resist removal and facet control of underlying features
US9272359B2 (en) 2008-05-30 2016-03-01 Colorado State University Research Foundation Liquid-gas interface plasma device
US8575843B2 (en) 2008-05-30 2013-11-05 Colorado State University Research Foundation System, method and apparatus for generating plasma
EP2297377B1 (en) 2008-05-30 2017-12-27 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
JP5398058B2 (ja) * 2008-10-31 2014-01-29 株式会社ダイヘン 高周波電源装置
US20100326602A1 (en) * 2009-06-30 2010-12-30 Intevac, Inc. Electrostatic chuck
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
JP5553460B2 (ja) 2010-03-31 2014-07-16 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
US9089319B2 (en) 2010-07-22 2015-07-28 Plasma Surgical Investments Limited Volumetrically oscillating plasma flows
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
US10312048B2 (en) * 2016-12-12 2019-06-04 Applied Materials, Inc. Creating ion energy distribution functions (IEDF)
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
CA3191050A1 (en) * 2020-08-28 2022-03-03 Nikolay Suslov Systems, methods, and devices for generating predominantly radially expanded plasma flow
US12437968B2 (en) 2020-09-02 2025-10-07 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method

Citations (2)

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Publication number Priority date Publication date Assignee Title
JPH0982495A (ja) * 1995-09-18 1997-03-28 Toshiba Corp プラズマ生成装置およびプラズマ生成方法
US20050034816A1 (en) * 2003-08-15 2005-02-17 Applied Materials, Inc. Plasma generation and control using a dual frequency RF source

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US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
JPH04901A (ja) * 1990-04-18 1992-01-06 Mitsubishi Electric Corp プラズマ装置の高周波給電方法及び装置
US5065118A (en) * 1990-07-26 1991-11-12 Applied Materials, Inc. Electronically tuned VHF/UHF matching network
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KR100324792B1 (ko) * 1993-03-31 2002-06-20 히가시 데쓰로 플라즈마처리장치
KR100302167B1 (ko) * 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
JP2654340B2 (ja) * 1993-11-11 1997-09-17 株式会社フロンテック 基板表面電位測定方法及びプラズマ装置
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JP3808973B2 (ja) 1996-05-15 2006-08-16 株式会社ダイヘン プラズマ処理装置
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US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
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Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982495A (ja) * 1995-09-18 1997-03-28 Toshiba Corp プラズマ生成装置およびプラズマ生成方法
US20050034816A1 (en) * 2003-08-15 2005-02-17 Applied Materials, Inc. Plasma generation and control using a dual frequency RF source

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012069921A (ja) * 2010-08-23 2012-04-05 Tokyo Electron Ltd プラズマ処理方法及びプラズマ処理装置
JP2017513195A (ja) * 2014-03-31 2017-05-25 コーニング インコーポレイテッド デュアルソースサイクロンプラズマ反応器を用いたガラスバッチ処理方法及び装置

Also Published As

Publication number Publication date
US20060266735A1 (en) 2006-11-30
KR20070102623A (ko) 2007-10-18
WO2006121744A1 (en) 2006-11-16
US7510665B2 (en) 2009-03-31
TW200704289A (en) 2007-01-16
TWI344321B (en) 2011-06-21

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