JP2018046215A - プラズマ処理装置及びプラズマ処理方法 - Google Patents
プラズマ処理装置及びプラズマ処理方法 Download PDFInfo
- Publication number
- JP2018046215A JP2018046215A JP2016181131A JP2016181131A JP2018046215A JP 2018046215 A JP2018046215 A JP 2018046215A JP 2016181131 A JP2016181131 A JP 2016181131A JP 2016181131 A JP2016181131 A JP 2016181131A JP 2018046215 A JP2018046215 A JP 2018046215A
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- high frequency
- voltage
- plasma processing
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title claims abstract description 75
- 238000003672 processing method Methods 0.000 title claims abstract description 18
- 238000009826 distribution Methods 0.000 abstract description 41
- 238000005530 etching Methods 0.000 abstract description 37
- 238000000034 method Methods 0.000 abstract description 12
- 230000008569 process Effects 0.000 abstract description 6
- 239000007789 gas Substances 0.000 description 25
- 239000000758 substrate Substances 0.000 description 15
- 150000002500 ions Chemical class 0.000 description 11
- 230000008859 change Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 238000001020 plasma etching Methods 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 230000000737 periodic effect Effects 0.000 description 3
- 230000010363 phase shift Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- PBYMHCSNWNVMIC-UHFFFAOYSA-N C.F.F Chemical compound C.F.F PBYMHCSNWNVMIC-UHFFFAOYSA-N 0.000 description 1
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910018503 SF6 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910003481 amorphous carbon Inorganic materials 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- QKCGXXHCELUCKW-UHFFFAOYSA-N n-[4-[4-(dinaphthalen-2-ylamino)phenyl]phenyl]-n-naphthalen-2-ylnaphthalen-2-amine Chemical compound C1=CC=CC2=CC(N(C=3C=CC(=CC=3)C=3C=CC(=CC=3)N(C=3C=C4C=CC=CC4=CC=3)C=3C=C4C=CC=CC4=CC=3)C3=CC4=CC=CC=C4C=C3)=CC=C21 QKCGXXHCELUCKW-UHFFFAOYSA-N 0.000 description 1
- QYSGYZVSCZSLHT-UHFFFAOYSA-N octafluoropropane Chemical compound FC(F)(F)C(F)(F)C(F)(F)F QYSGYZVSCZSLHT-UHFFFAOYSA-N 0.000 description 1
- 229960004065 perflutren Drugs 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 1
- 229960000909 sulfur hexafluoride Drugs 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32146—Amplitude modulation, includes pulsing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/32119—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3266—Magnetic control means
- H01J37/32669—Particular magnets or magnet arrangements for controlling the discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
- H01J2237/3341—Reactive etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
表1に示すように低周波数側高周波バイアスと高周波数側高周波バイアスとの周波数比が4Nの場合、Vppが最小かつVMINが最大となる位相差は、270度であり、低周波数側高周波バイアスと高周波数側高周波バイアスとの周波数比が4N+1の場合、Vppが最小となる位相差は、180である。また、表1に示すように低周波数側高周波バイアスと高周波数側高周波バイアスとの周波数比が4N−2の場合、Vppが最小かつVMINが最大となる位相差は、90度であり、低周波数側高周波バイアスと高周波数側高周波バイアスとの周波数比が4N−1の場合、Vppが最小となる位相差は0度である。尚、Nは自然数とする。また、低周波数側高周波バイアスと高周波数側高周波バイアスとの周波数比が4Nまたは4N−2、つまり、低周波数側高周波バイアスと高周波数側高周波バイアスとの周波数比が偶数の場合、Vppが最小となる位相差は0から360度の範囲において2つ存在するため、この2つのうち、VMINが小さい方を選択するものとする。
低周波数側高周波バイアスの周波数が400KHz、高周波数側高周波バイアスの周波数が2MHz+100Hzのように周波数比がNからわずかにズレた場合、この時のVppの変動周期は100Hzにもなる。このため、この変動を制御するのに比べて位相差θを時間的に変動する周期関数として制御する方が制御し易い。
Claims (13)
- プラズマを用いて試料が処理される処理室と、前記プラズマを生成するための高周波電力を供給する第一の高周波電源と、前記試料が載置される試料台と、前記試料台に第一の高周波電圧を印加する第二の高周波電源とを備えるプラズマ処理装置において、
Nを2以上の自然数とした場合、前記第一の高周波電圧の周波数に対してN倍の周波数の第二の高周波電圧を前記試料台に印加する第三の高周波電源と、前記第一の高周波電圧の位相と前記第二の高周波電圧の位相との位相差が所定値となるように前記位相差を制御する制御部をさらに備えることを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記所定値は、前記試料台に印加された高周波電圧のピーク間電圧が最小となる値であることを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記所定値は、第一のピーク値と前記第一のピーク値より小さい第二のピーク値を有し前記試料台に印加された高周波電圧の前記第二のピーク値が最大となる値であることを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
前記位相差を時間変調させるためのパルスを生成するパルスコントローラをさらに備えることを特徴とするプラズマ処理装置。 - 請求項1に記載のプラズマ処理装置において、
基準位相に対する前記第一の高周波電圧の位相遅れと基準位相に対する前記第二の高周波電圧の位相遅れを用いて前記所定値が求められることを特徴とするプラズマ処理装置。 - プラズマを用いて試料が処理される処理室と、前記プラズマを生成するための高周波電力を供給する第一の高周波電源と、前記試料が載置される試料台と、前記試料台に第一の高周波電圧を印加する第二の高周波電源とを備えるプラズマ処理装置において、
第二の高周波電圧を前記試料台に印加する第三の高周波電源と、
前記第一の高周波電圧の位相と前記第二の高周波電圧の位相との位相差を時間変調させるためのパルスを生成するパルスコントローラをさらに備えることを特徴とするプラズマ処理装置。 - 試料台に載置された試料をプラズマを用いて処理するプラズマ処理方法において、
Nを2以上の自然数とした場合、第一の高周波電圧と前記第一の高周波電圧の周波数に対してN倍の周波数の第二の高周波電圧を前記試料台に印加し、
前記第一の高周波電圧の位相と前記第二の高周波電圧の位相との位相差が所定値となるように前記位相差を制御することを特徴とするプラズマ処理方法。 - 請求項7に記載のプラズマ処理方法において、
前記所定値は、前記試料台に印加された高周波電圧のピーク間電圧が最小となる値であることを特徴とするプラズマ処理方法。 - 請求項7に記載のプラズマ処理方法において、
前記所定値は、第一のピーク値と前記第一のピーク値より小さい第二のピーク値を有し前記試料台に印加された高周波電圧の前記第二のピーク値が最大となる値であることを特徴とするプラズマ処理方法。 - 請求項7に記載のプラズマ処理方法において、
前記位相差を時間変調することを特徴とするプラズマ処理方法。 - 請求項7に記載のプラズマ処理方法において、
Mを自然数とし、Nが4M+1である場合、前記所定値は、第一の所定値であり、
Mを自然数とし、Nが4Mである場合、前記所定値は、第二の所定値であり、
Mを自然数とし、Nが4M−1である場合、前記所定値は、第三の所定値であり、
Mを自然数とし、Nが4M−2である場合、前記所定値は、第四の所定値であることを特徴とするプラズマ処理方法。 - 請求項7に記載のプラズマ処理方法において、
基準位相に対する前記第一の高周波電圧の位相遅れと基準位相に対する前記第二の高周波電圧の位相遅れを用いて前記所定値が求められることを特徴とするプラズマ処理方法。 - 試料台に載置された試料をプラズマを用いて処理するプラズマ処理方法において、
第一の高周波電圧と第二の高周波電圧を前記試料台に印加し、
前記第一の高周波電圧の位相と前記第二の高周波電圧の位相との位相差を時間変調することを特徴とするプラズマ処理方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016181131A JP6643212B2 (ja) | 2016-09-16 | 2016-09-16 | プラズマ処理装置及びプラズマ処理方法 |
KR1020170000145A KR101872763B1 (ko) | 2016-09-16 | 2017-01-02 | 플라스마 처리 장치 및 플라스마 처리 방법 |
TW106102650A TWI674616B (zh) | 2016-09-16 | 2017-01-24 | 電漿處理裝置及電漿處理方法 |
US15/445,027 US11355315B2 (en) | 2016-09-16 | 2017-02-28 | Plasma processing apparatus and plasma processing method |
KR1020180027835A KR101938151B1 (ko) | 2016-09-16 | 2018-03-09 | 플라스마 처리 장치 및 플라스마 처리 방법 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2016181131A JP6643212B2 (ja) | 2016-09-16 | 2016-09-16 | プラズマ処理装置及びプラズマ処理方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018046215A true JP2018046215A (ja) | 2018-03-22 |
JP6643212B2 JP6643212B2 (ja) | 2020-02-12 |
Family
ID=61620534
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2016181131A Active JP6643212B2 (ja) | 2016-09-16 | 2016-09-16 | プラズマ処理装置及びプラズマ処理方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US11355315B2 (ja) |
JP (1) | JP6643212B2 (ja) |
KR (2) | KR101872763B1 (ja) |
TW (1) | TWI674616B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023238235A1 (ja) * | 2022-06-07 | 2023-12-14 | 株式会社日立ハイテク | プラズマ処理装置 |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102421625B1 (ko) * | 2017-06-27 | 2022-07-19 | 캐논 아네르바 가부시키가이샤 | 플라스마 처리 장치 |
CN108899275B (zh) * | 2018-07-20 | 2021-03-02 | 北京北方华创微电子装备有限公司 | 一种等离子体刻蚀方法 |
CN109273341B (zh) * | 2018-10-18 | 2021-01-08 | 北京北方华创微电子装备有限公司 | 一种等离子体工艺方法 |
US11476092B2 (en) * | 2019-05-31 | 2022-10-18 | Mks Instruments, Inc. | System and method of power generation with phase linked solid-state generator modules |
US11424105B2 (en) * | 2019-08-05 | 2022-08-23 | Hitachi High-Tech Corporation | Plasma processing apparatus |
CN110299279B (zh) * | 2019-08-22 | 2019-11-12 | 中微半导体设备(上海)股份有限公司 | 一种射频电源系统、等离子体处理器及其调频匹配方法 |
CN110310878B (zh) * | 2019-08-28 | 2019-11-12 | 中微半导体设备(上海)股份有限公司 | 一种等离子体处理器及其处理方法 |
GB2613553A (en) * | 2021-12-03 | 2023-06-14 | Elekta ltd | RF source |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06338476A (ja) * | 1993-03-31 | 1994-12-06 | Tokyo Electron Ltd | プラズマ処理方法 |
JP2008060429A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 基板のプラズマ処理装置及びプラズマ処理方法 |
JP2008244429A (ja) * | 2007-02-13 | 2008-10-09 | Hitachi High-Technologies Corp | プラズマ処理方法およびプラズマ処理装置 |
US20120273341A1 (en) * | 2011-04-29 | 2012-11-01 | Applied Materials, Inc. | Methods and apparatus for controlling plasma in a process chamber |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8129283B2 (en) * | 2007-02-13 | 2012-03-06 | Hitachi High-Technologies Corporation | Plasma processing method and plasma processing apparatus |
EP2122657B8 (en) * | 2008-03-20 | 2011-06-22 | Ruhr-Universität Bochum | Method for controlling ion energy in radio frequency plasmas |
US20090297404A1 (en) * | 2008-05-29 | 2009-12-03 | Applied Materials, Inc. | Plasma reactor with high speed plasma impedance tuning by modulation of source power or bias power |
JP2010016124A (ja) * | 2008-07-02 | 2010-01-21 | Hitachi High-Technologies Corp | プラズマ処理装置およびプラズマ処理方法 |
JP5395491B2 (ja) * | 2009-03-31 | 2014-01-22 | 東京エレクトロン株式会社 | 基板処理装置及び基板処理方法 |
US8404598B2 (en) * | 2009-08-07 | 2013-03-26 | Applied Materials, Inc. | Synchronized radio frequency pulsing for plasma etching |
JP5558224B2 (ja) * | 2010-06-23 | 2014-07-23 | 東京エレクトロン株式会社 | 基板処理方法 |
US20130122711A1 (en) * | 2011-11-10 | 2013-05-16 | Alexei Marakhtanov | System, method and apparatus for plasma sheath voltage control |
JP6207880B2 (ja) | 2012-09-26 | 2017-10-04 | 東芝メモリ株式会社 | プラズマ処理装置およびプラズマ処理方法 |
JP2014229751A (ja) * | 2013-05-22 | 2014-12-08 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置および処理方法 |
KR20150000028A (ko) * | 2013-06-20 | 2015-01-02 | 삼성전자주식회사 | 충전 환경 판별이 가능한 무선 전력 전송 시스템 |
US10153139B2 (en) * | 2015-06-17 | 2018-12-11 | Applied Materials, Inc. | Multiple electrode substrate support assembly and phase control system |
-
2016
- 2016-09-16 JP JP2016181131A patent/JP6643212B2/ja active Active
-
2017
- 2017-01-02 KR KR1020170000145A patent/KR101872763B1/ko active IP Right Grant
- 2017-01-24 TW TW106102650A patent/TWI674616B/zh active
- 2017-02-28 US US15/445,027 patent/US11355315B2/en active Active
-
2018
- 2018-03-09 KR KR1020180027835A patent/KR101938151B1/ko active IP Right Grant
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06338476A (ja) * | 1993-03-31 | 1994-12-06 | Tokyo Electron Ltd | プラズマ処理方法 |
JP2008060429A (ja) * | 2006-08-31 | 2008-03-13 | Toshiba Corp | 基板のプラズマ処理装置及びプラズマ処理方法 |
JP2008244429A (ja) * | 2007-02-13 | 2008-10-09 | Hitachi High-Technologies Corp | プラズマ処理方法およびプラズマ処理装置 |
US20120273341A1 (en) * | 2011-04-29 | 2012-11-01 | Applied Materials, Inc. | Methods and apparatus for controlling plasma in a process chamber |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023238235A1 (ja) * | 2022-06-07 | 2023-12-14 | 株式会社日立ハイテク | プラズマ処理装置 |
Also Published As
Publication number | Publication date |
---|---|
KR20180030800A (ko) | 2018-03-26 |
US11355315B2 (en) | 2022-06-07 |
KR101872763B1 (ko) | 2018-06-29 |
TW201814764A (zh) | 2018-04-16 |
TWI674616B (zh) | 2019-10-11 |
KR101938151B1 (ko) | 2019-01-15 |
KR20180030741A (ko) | 2018-03-26 |
US20180082821A1 (en) | 2018-03-22 |
JP6643212B2 (ja) | 2020-02-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6643212B2 (ja) | プラズマ処理装置及びプラズマ処理方法 | |
JP7155354B2 (ja) | プラズマ処理装置、プロセッサ、制御方法、非一時的コンピュータ可読記録媒体及びプログラム | |
JP7455174B2 (ja) | Rf発生器及び方法 | |
US10672589B2 (en) | Plasma processing apparatus and control method | |
JP6548748B2 (ja) | プラズマ処理方法およびプラズマ処理装置 | |
JP7210094B2 (ja) | 信号変調同期式プラズマ処理システム | |
JP5205378B2 (ja) | Rf変調によって弾道電子ビームの均一性を制御する方法及びシステム | |
TW202135128A (zh) | 用於電漿處理之方法和系統以及相關的非暫時性電腦可讀取媒體 | |
JP6997642B2 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
JP7000521B2 (ja) | プラズマ処理装置及び制御方法 | |
JP6602581B2 (ja) | プラズマ処理装置およびプラズマ処理方法 | |
JP2001093890A (ja) | プラズマエッチング装置及びエッチング方法 | |
JP2017028092A (ja) | プラズマ処理装置及びプラズマ処理方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20160921 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170120 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170126 |
|
RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20170803 |
|
RD04 | Notification of resignation of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7424 Effective date: 20170804 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20181010 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20190624 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20190702 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20190830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20191025 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20191210 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20200106 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6643212 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S531 | Written request for registration of change of domicile |
Free format text: JAPANESE INTERMEDIATE CODE: R313531 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |