JP2008544480A5 - - Google Patents

Download PDF

Info

Publication number
JP2008544480A5
JP2008544480A5 JP2008511180A JP2008511180A JP2008544480A5 JP 2008544480 A5 JP2008544480 A5 JP 2008544480A5 JP 2008511180 A JP2008511180 A JP 2008511180A JP 2008511180 A JP2008511180 A JP 2008511180A JP 2008544480 A5 JP2008544480 A5 JP 2008544480A5
Authority
JP
Japan
Prior art keywords
plasma
frequency
frequencies
mhz
processing chamber
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2008511180A
Other languages
English (en)
Japanese (ja)
Other versions
JP2008544480A (ja
Filing date
Publication date
Priority claimed from US11/416,468 external-priority patent/US7510665B2/en
Application filed filed Critical
Publication of JP2008544480A publication Critical patent/JP2008544480A/ja
Publication of JP2008544480A5 publication Critical patent/JP2008544480A5/ja
Pending legal-status Critical Current

Links

JP2008511180A 2005-05-09 2006-05-04 2周波のrf信号を用いたプラズマの生成及び制御 Pending JP2008544480A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US67904205P 2005-05-09 2005-05-09
US11/416,468 US7510665B2 (en) 2003-08-15 2006-05-02 Plasma generation and control using dual frequency RF signals
PCT/US2006/017075 WO2006121744A1 (en) 2005-05-09 2006-05-04 Plasma generation and control using dual frequency rf signals

Publications (2)

Publication Number Publication Date
JP2008544480A JP2008544480A (ja) 2008-12-04
JP2008544480A5 true JP2008544480A5 (enExample) 2009-06-25

Family

ID=37396865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008511180A Pending JP2008544480A (ja) 2005-05-09 2006-05-04 2周波のrf信号を用いたプラズマの生成及び制御

Country Status (5)

Country Link
US (1) US7510665B2 (enExample)
JP (1) JP2008544480A (enExample)
KR (1) KR20070102623A (enExample)
TW (1) TWI344321B (enExample)
WO (1) WO2006121744A1 (enExample)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100362619C (zh) 2005-08-05 2008-01-16 中微半导体设备(上海)有限公司 真空反应室的射频匹配耦合网络及其配置方法
US7758763B2 (en) * 2006-10-31 2010-07-20 Applied Materials, Inc. Plasma for resist removal and facet control of underlying features
US9272359B2 (en) 2008-05-30 2016-03-01 Colorado State University Research Foundation Liquid-gas interface plasma device
US8575843B2 (en) 2008-05-30 2013-11-05 Colorado State University Research Foundation System, method and apparatus for generating plasma
EP2297377B1 (en) 2008-05-30 2017-12-27 Colorado State University Research Foundation Plasma-based chemical source device and method of use thereof
US8994270B2 (en) 2008-05-30 2015-03-31 Colorado State University Research Foundation System and methods for plasma application
JP5398058B2 (ja) * 2008-10-31 2014-01-29 株式会社ダイヘン 高周波電源装置
US20100326602A1 (en) * 2009-06-30 2010-12-30 Intevac, Inc. Electrostatic chuck
US8222822B2 (en) 2009-10-27 2012-07-17 Tyco Healthcare Group Lp Inductively-coupled plasma device
JP5553460B2 (ja) 2010-03-31 2014-07-16 コロラド ステート ユニバーシティー リサーチ ファウンデーション 液体−気体界面プラズマデバイス
US9089319B2 (en) 2010-07-22 2015-07-28 Plasma Surgical Investments Limited Volumetrically oscillating plasma flows
JP5916056B2 (ja) * 2010-08-23 2016-05-11 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
US9532826B2 (en) 2013-03-06 2017-01-03 Covidien Lp System and method for sinus surgery
US9555145B2 (en) 2013-03-13 2017-01-31 Covidien Lp System and method for biofilm remediation
US9284210B2 (en) * 2014-03-31 2016-03-15 Corning Incorporated Methods and apparatus for material processing using dual source cyclonic plasma reactor
US10312048B2 (en) * 2016-12-12 2019-06-04 Applied Materials, Inc. Creating ion energy distribution functions (IEDF)
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
CA3191050A1 (en) * 2020-08-28 2022-03-03 Nikolay Suslov Systems, methods, and devices for generating predominantly radially expanded plasma flow
US12437968B2 (en) 2020-09-02 2025-10-07 Hitachi High-Tech Corporation Plasma processing apparatus and plasma processing method

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
US4585516A (en) * 1985-03-04 1986-04-29 Tegal Corporation Variable duty cycle, multiple frequency, plasma reactor
DE3733135C1 (de) * 1987-10-01 1988-09-22 Leybold Ag Vorrichtung zum Beschichten oder AEtzen mittels eines Plasmas
US5556501A (en) * 1989-10-03 1996-09-17 Applied Materials, Inc. Silicon scavenger in an inductively coupled RF plasma reactor
JPH04901A (ja) * 1990-04-18 1992-01-06 Mitsubishi Electric Corp プラズマ装置の高周波給電方法及び装置
US5065118A (en) * 1990-07-26 1991-11-12 Applied Materials, Inc. Electronically tuned VHF/UHF matching network
US5280154A (en) 1992-01-30 1994-01-18 International Business Machines Corporation Radio frequency induction plasma processing system utilizing a uniform field coil
KR100324792B1 (ko) * 1993-03-31 2002-06-20 히가시 데쓰로 플라즈마처리장치
KR100302167B1 (ko) * 1993-11-05 2001-11-22 히가시 데쓰로 플라즈마처리장치및플라즈마처리방법
JP2654340B2 (ja) * 1993-11-11 1997-09-17 株式会社フロンテック 基板表面電位測定方法及びプラズマ装置
US5512130A (en) * 1994-03-09 1996-04-30 Texas Instruments Incorporated Method and apparatus of etching a clean trench in a semiconductor material
DE69509046T2 (de) * 1994-11-30 1999-10-21 Applied Materials, Inc. Plasmareaktoren zur Behandlung von Halbleiterscheiben
US5534751A (en) * 1995-07-10 1996-07-09 Lam Research Corporation Plasma etching apparatus utilizing plasma confinement
JP3119172B2 (ja) * 1995-09-13 2000-12-18 日新電機株式会社 プラズマcvd法及び装置
JPH0982495A (ja) * 1995-09-18 1997-03-28 Toshiba Corp プラズマ生成装置およびプラズマ生成方法
US5817534A (en) * 1995-12-04 1998-10-06 Applied Materials, Inc. RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers
JP3808973B2 (ja) 1996-05-15 2006-08-16 株式会社ダイヘン プラズマ処理装置
US6500314B1 (en) * 1996-07-03 2002-12-31 Tegal Corporation Plasma etch reactor and method
US6048435A (en) * 1996-07-03 2000-04-11 Tegal Corporation Plasma etch reactor and method for emerging films
JP3220383B2 (ja) * 1996-07-23 2001-10-22 東京エレクトロン株式会社 プラズマ処理装置及びその方法
US6113731A (en) * 1997-01-02 2000-09-05 Applied Materials, Inc. Magnetically-enhanced plasma chamber with non-uniform magnetic field
US6126778A (en) * 1998-07-22 2000-10-03 Micron Technology, Inc. Beat frequency modulation for plasma generation
US5985375A (en) * 1998-09-03 1999-11-16 Micron Technology, Inc. Method for pulsed-plasma enhanced vapor deposition
US6642149B2 (en) * 1998-09-16 2003-11-04 Tokyo Electron Limited Plasma processing method
US6222718B1 (en) * 1998-11-12 2001-04-24 Lam Research Corporation Integrated power modules for plasma processing systems
US6196855B1 (en) * 1999-08-13 2001-03-06 Umax Data Systems Inc. Guiding mechanism for guiding flat cable between two traveling modules
US6193855B1 (en) 1999-10-19 2001-02-27 Applied Materials, Inc. Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage
US7030335B2 (en) * 2000-03-17 2006-04-18 Applied Materials, Inc. Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression
US6507155B1 (en) * 2000-04-06 2003-01-14 Applied Materials Inc. Inductively coupled plasma source with controllable power deposition
US6506289B2 (en) * 2000-08-07 2003-01-14 Symmorphix, Inc. Planar optical devices and methods for their manufacture
JP2002246368A (ja) 2001-02-14 2002-08-30 Anelva Corp ウェハー表面径方向均一プラズマを用いるウェハー処理システム
JP2003073836A (ja) 2001-08-28 2003-03-12 Canon Inc 真空処理方法及び真空処理装置
US6887340B2 (en) * 2001-11-13 2005-05-03 Lam Research Corporation Etch rate uniformity
TWI241868B (en) * 2002-02-06 2005-10-11 Matsushita Electric Industrial Co Ltd Plasma processing method and apparatus
US7431857B2 (en) * 2003-08-15 2008-10-07 Applied Materials, Inc. Plasma generation and control using a dual frequency RF source
US7838430B2 (en) * 2003-10-28 2010-11-23 Applied Materials, Inc. Plasma control using dual cathode frequency mixing
US20050241762A1 (en) * 2004-04-30 2005-11-03 Applied Materials, Inc. Alternating asymmetrical plasma generation in a process chamber

Similar Documents

Publication Publication Date Title
JP2008544480A5 (enExample)
TWI588889B (zh) 電漿處理方法及電漿處理裝置
TWI552223B (zh) 電漿處理裝置
KR101286242B1 (ko) 반도체 소자 제조 방법
CN103476196B (zh) 等离子体处理装置及等离子体处理方法
JP5867701B2 (ja) プラズマ処理装置
JP4714166B2 (ja) 基板のプラズマ処理装置及びプラズマ処理方法
JP2015076287A (ja) プラズマ処理装置
KR20210111269A (ko) 플라즈마 처리 장치 및 플라즈마 처리 방법
KR20100058346A (ko) 동기식 펄스 플라즈마 에칭 장비
TW201533797A (zh) 電漿處理裝置
TW201601188A (zh) 電漿處理裝置及電漿處理方法
WO2003015123A3 (en) Dual frequency plasma etch reactor with independent plasma density/chemistry and ion energy control
JP2016105489A (ja) プラズマ処理方法
KR20210065045A (ko) 플라즈마 처리 방법 및 플라즈마 처리 장치
TW200704289A (en) Plasma generation and control using dual frequency RF signals
US11056316B2 (en) Radio frequency pulse matching method and device thereof and pulsing plasma generation system
CN103928283A (zh) 一种用于真空处理腔室的射频脉冲功率匹配的方法及其装置
JP6180890B2 (ja) プラズマ処理方法
CN103855911B (zh) 射频信号相位可数字式调节的射频电源
JP2012164766A (ja) エッチング装置
KR20240052325A (ko) 다중 채널 펄스 rf 전원 공급장치
US20240128056A1 (en) Plasma etching apparatus and operating method thereof
TWI605487B (zh) Inductively coupled plasma processing system and processing method
WO2014082360A1 (zh) 一种射频电源外部输入信号相位同步的方法