TWI344321B - Plasma generation and control using dual frequency rf signals - Google Patents
Plasma generation and control using dual frequency rf signals Download PDFInfo
- Publication number
- TWI344321B TWI344321B TW095116153A TW95116153A TWI344321B TW I344321 B TWI344321 B TW I344321B TW 095116153 A TW095116153 A TW 095116153A TW 95116153 A TW95116153 A TW 95116153A TW I344321 B TWI344321 B TW I344321B
- Authority
- TW
- Taiwan
- Prior art keywords
- frequency
- plasma
- frequencies
- mhz
- processing chamber
- Prior art date
Links
- 230000009977 dual effect Effects 0.000 title description 16
- 238000000034 method Methods 0.000 claims description 37
- 150000002500 ions Chemical class 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 17
- 238000005315 distribution function Methods 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 11
- 238000009826 distribution Methods 0.000 claims description 6
- 230000008878 coupling Effects 0.000 claims description 2
- 238000010168 coupling process Methods 0.000 claims description 2
- 238000005859 coupling reaction Methods 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims 1
- 230000008569 process Effects 0.000 description 9
- 230000005284 excitation Effects 0.000 description 8
- 230000010355 oscillation Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 238000010494 dissociation reaction Methods 0.000 description 4
- 230000005593 dissociations Effects 0.000 description 4
- 230000006698 induction Effects 0.000 description 4
- 230000006870 function Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 208000001613 Gambling Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000035922 thirst Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
- H01J37/32155—Frequency modulation
- H01J37/32165—Plural frequencies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US49552303P | 2003-08-15 | 2003-08-15 | |
| US10/843,914 US7431857B2 (en) | 2003-08-15 | 2004-05-12 | Plasma generation and control using a dual frequency RF source |
| US67904205P | 2005-05-09 | 2005-05-09 | |
| US11/416,468 US7510665B2 (en) | 2003-08-15 | 2006-05-02 | Plasma generation and control using dual frequency RF signals |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200704289A TW200704289A (en) | 2007-01-16 |
| TWI344321B true TWI344321B (en) | 2011-06-21 |
Family
ID=37396865
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095116153A TWI344321B (en) | 2003-08-15 | 2006-05-05 | Plasma generation and control using dual frequency rf signals |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7510665B2 (enExample) |
| JP (1) | JP2008544480A (enExample) |
| KR (1) | KR20070102623A (enExample) |
| TW (1) | TWI344321B (enExample) |
| WO (1) | WO2006121744A1 (enExample) |
Families Citing this family (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100362619C (zh) | 2005-08-05 | 2008-01-16 | 中微半导体设备(上海)有限公司 | 真空反应室的射频匹配耦合网络及其配置方法 |
| US7758763B2 (en) * | 2006-10-31 | 2010-07-20 | Applied Materials, Inc. | Plasma for resist removal and facet control of underlying features |
| US9272359B2 (en) | 2008-05-30 | 2016-03-01 | Colorado State University Research Foundation | Liquid-gas interface plasma device |
| US8575843B2 (en) | 2008-05-30 | 2013-11-05 | Colorado State University Research Foundation | System, method and apparatus for generating plasma |
| EP2297377B1 (en) | 2008-05-30 | 2017-12-27 | Colorado State University Research Foundation | Plasma-based chemical source device and method of use thereof |
| US8994270B2 (en) | 2008-05-30 | 2015-03-31 | Colorado State University Research Foundation | System and methods for plasma application |
| JP5398058B2 (ja) * | 2008-10-31 | 2014-01-29 | 株式会社ダイヘン | 高周波電源装置 |
| US20100326602A1 (en) * | 2009-06-30 | 2010-12-30 | Intevac, Inc. | Electrostatic chuck |
| US8222822B2 (en) | 2009-10-27 | 2012-07-17 | Tyco Healthcare Group Lp | Inductively-coupled plasma device |
| JP5553460B2 (ja) | 2010-03-31 | 2014-07-16 | コロラド ステート ユニバーシティー リサーチ ファウンデーション | 液体−気体界面プラズマデバイス |
| US9089319B2 (en) | 2010-07-22 | 2015-07-28 | Plasma Surgical Investments Limited | Volumetrically oscillating plasma flows |
| JP5916056B2 (ja) * | 2010-08-23 | 2016-05-11 | 東京エレクトロン株式会社 | プラズマ処理方法及びプラズマ処理装置 |
| US9532826B2 (en) | 2013-03-06 | 2017-01-03 | Covidien Lp | System and method for sinus surgery |
| US9555145B2 (en) | 2013-03-13 | 2017-01-31 | Covidien Lp | System and method for biofilm remediation |
| US9284210B2 (en) * | 2014-03-31 | 2016-03-15 | Corning Incorporated | Methods and apparatus for material processing using dual source cyclonic plasma reactor |
| US10312048B2 (en) * | 2016-12-12 | 2019-06-04 | Applied Materials, Inc. | Creating ion energy distribution functions (IEDF) |
| US10395896B2 (en) | 2017-03-03 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation |
| CA3191050A1 (en) * | 2020-08-28 | 2022-03-03 | Nikolay Suslov | Systems, methods, and devices for generating predominantly radially expanded plasma flow |
| US12437968B2 (en) | 2020-09-02 | 2025-10-07 | Hitachi High-Tech Corporation | Plasma processing apparatus and plasma processing method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4579618A (en) * | 1984-01-06 | 1986-04-01 | Tegal Corporation | Plasma reactor apparatus |
| US4585516A (en) * | 1985-03-04 | 1986-04-29 | Tegal Corporation | Variable duty cycle, multiple frequency, plasma reactor |
| DE3733135C1 (de) * | 1987-10-01 | 1988-09-22 | Leybold Ag | Vorrichtung zum Beschichten oder AEtzen mittels eines Plasmas |
| US5556501A (en) * | 1989-10-03 | 1996-09-17 | Applied Materials, Inc. | Silicon scavenger in an inductively coupled RF plasma reactor |
| JPH04901A (ja) * | 1990-04-18 | 1992-01-06 | Mitsubishi Electric Corp | プラズマ装置の高周波給電方法及び装置 |
| US5065118A (en) * | 1990-07-26 | 1991-11-12 | Applied Materials, Inc. | Electronically tuned VHF/UHF matching network |
| US5280154A (en) | 1992-01-30 | 1994-01-18 | International Business Machines Corporation | Radio frequency induction plasma processing system utilizing a uniform field coil |
| KR100324792B1 (ko) * | 1993-03-31 | 2002-06-20 | 히가시 데쓰로 | 플라즈마처리장치 |
| KR100302167B1 (ko) * | 1993-11-05 | 2001-11-22 | 히가시 데쓰로 | 플라즈마처리장치및플라즈마처리방법 |
| JP2654340B2 (ja) * | 1993-11-11 | 1997-09-17 | 株式会社フロンテック | 基板表面電位測定方法及びプラズマ装置 |
| US5512130A (en) * | 1994-03-09 | 1996-04-30 | Texas Instruments Incorporated | Method and apparatus of etching a clean trench in a semiconductor material |
| DE69509046T2 (de) * | 1994-11-30 | 1999-10-21 | Applied Materials, Inc. | Plasmareaktoren zur Behandlung von Halbleiterscheiben |
| US5534751A (en) * | 1995-07-10 | 1996-07-09 | Lam Research Corporation | Plasma etching apparatus utilizing plasma confinement |
| JP3119172B2 (ja) * | 1995-09-13 | 2000-12-18 | 日新電機株式会社 | プラズマｃｖｄ法及び装置 |
| JPH0982495A (ja) * | 1995-09-18 | 1997-03-28 | Toshiba Corp | プラズマ生成装置およびプラズマ生成方法 |
| US5817534A (en) * | 1995-12-04 | 1998-10-06 | Applied Materials, Inc. | RF plasma reactor with cleaning electrode for cleaning during processing of semiconductor wafers |
| JP3808973B2 (ja) | 1996-05-15 | 2006-08-16 | 株式会社ダイヘン | プラズマ処理装置 |
| US6500314B1 (en) * | 1996-07-03 | 2002-12-31 | Tegal Corporation | Plasma etch reactor and method |
| US6048435A (en) * | 1996-07-03 | 2000-04-11 | Tegal Corporation | Plasma etch reactor and method for emerging films |
| JP3220383B2 (ja) * | 1996-07-23 | 2001-10-22 | 東京エレクトロン株式会社 | プラズマ処理装置及びその方法 |
| US6113731A (en) * | 1997-01-02 | 2000-09-05 | Applied Materials, Inc. | Magnetically-enhanced plasma chamber with non-uniform magnetic field |
| US6126778A (en) * | 1998-07-22 | 2000-10-03 | Micron Technology, Inc. | Beat frequency modulation for plasma generation |
| US5985375A (en) * | 1998-09-03 | 1999-11-16 | Micron Technology, Inc. | Method for pulsed-plasma enhanced vapor deposition |
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| US6196855B1 (en) * | 1999-08-13 | 2001-03-06 | Umax Data Systems Inc. | Guiding mechanism for guiding flat cable between two traveling modules |
| US6193855B1 (en) | 1999-10-19 | 2001-02-27 | Applied Materials, Inc. | Use of modulated inductive power and bias power to reduce overhang and improve bottom coverage |
| US7030335B2 (en) * | 2000-03-17 | 2006-04-18 | Applied Materials, Inc. | Plasma reactor with overhead RF electrode tuned to the plasma with arcing suppression |
| US6507155B1 (en) * | 2000-04-06 | 2003-01-14 | Applied Materials Inc. | Inductively coupled plasma source with controllable power deposition |
| US6506289B2 (en) * | 2000-08-07 | 2003-01-14 | Symmorphix, Inc. | Planar optical devices and methods for their manufacture |
| JP2002246368A (ja) | 2001-02-14 | 2002-08-30 | Anelva Corp | ウェハー表面径方向均一プラズマを用いるウェハー処理システム |
| JP2003073836A (ja) | 2001-08-28 | 2003-03-12 | Canon Inc | 真空処理方法及び真空処理装置 |
| US6887340B2 (en) * | 2001-11-13 | 2005-05-03 | Lam Research Corporation | Etch rate uniformity |
| TWI241868B (en) * | 2002-02-06 | 2005-10-11 | Matsushita Electric Industrial Co Ltd | Plasma processing method and apparatus |
| US7431857B2 (en) * | 2003-08-15 | 2008-10-07 | Applied Materials, Inc. | Plasma generation and control using a dual frequency RF source |
| US7838430B2 (en) * | 2003-10-28 | 2010-11-23 | Applied Materials, Inc. | Plasma control using dual cathode frequency mixing |
| US20050241762A1 (en) * | 2004-04-30 | 2005-11-03 | Applied Materials, Inc. | Alternating asymmetrical plasma generation in a process chamber |
-
2006
- 2006-05-02 US US11/416,468 patent/US7510665B2/en not_active Expired - Lifetime
- 2006-05-04 JP JP2008511180A patent/JP2008544480A/ja active Pending
- 2006-05-04 WO PCT/US2006/017075 patent/WO2006121744A1/en not_active Ceased
- 2006-05-04 KR KR1020077021009A patent/KR20070102623A/ko not_active Ceased
- 2006-05-05 TW TW095116153A patent/TWI344321B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US20060266735A1 (en) | 2006-11-30 |
| KR20070102623A (ko) | 2007-10-18 |
| WO2006121744A1 (en) | 2006-11-16 |
| JP2008544480A (ja) | 2008-12-04 |
| US7510665B2 (en) | 2009-03-31 |
| TW200704289A (en) | 2007-01-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |