KR20070094522A - 플라즈마 처리 장치, 포커스링, 포커스링 부품 및 플라즈마처리 방법 - Google Patents

플라즈마 처리 장치, 포커스링, 포커스링 부품 및 플라즈마처리 방법 Download PDF

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Publication number
KR20070094522A
KR20070094522A KR1020070025713A KR20070025713A KR20070094522A KR 20070094522 A KR20070094522 A KR 20070094522A KR 1020070025713 A KR1020070025713 A KR 1020070025713A KR 20070025713 A KR20070025713 A KR 20070025713A KR 20070094522 A KR20070094522 A KR 20070094522A
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KR
South Korea
Prior art keywords
ring portion
mounting table
substrate
inner ring
semiconductor wafer
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Ceased
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KR1020070025713A
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English (en)
Korean (ko)
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아키라 고시이시
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동경 엘렉트론 주식회사
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Publication of KR20070094522A publication Critical patent/KR20070094522A/ko
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020070025713A 2006-03-17 2007-03-15 플라즈마 처리 장치, 포커스링, 포커스링 부품 및 플라즈마처리 방법 Ceased KR20070094522A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006074372A JP2007250967A (ja) 2006-03-17 2006-03-17 プラズマ処理装置および方法とフォーカスリング
JPJP-P-2006-00074372 2006-03-17

Related Child Applications (1)

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KR1020090008912A Division KR100959706B1 (ko) 2006-03-17 2009-02-04 플라즈마 처리 장치, 포커스링, 포커스링 부품 및 플라즈마처리 방법

Publications (1)

Publication Number Publication Date
KR20070094522A true KR20070094522A (ko) 2007-09-20

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KR1020070025713A Ceased KR20070094522A (ko) 2006-03-17 2007-03-15 플라즈마 처리 장치, 포커스링, 포커스링 부품 및 플라즈마처리 방법
KR1020090008912A Expired - Fee Related KR100959706B1 (ko) 2006-03-17 2009-02-04 플라즈마 처리 장치, 포커스링, 포커스링 부품 및 플라즈마처리 방법

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KR1020090008912A Expired - Fee Related KR100959706B1 (ko) 2006-03-17 2009-02-04 플라즈마 처리 장치, 포커스링, 포커스링 부품 및 플라즈마처리 방법

Country Status (4)

Country Link
JP (1) JP2007250967A (https=)
KR (2) KR20070094522A (https=)
CN (2) CN101807509B (https=)
TW (1) TWI411034B (https=)

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KR20170029076A (ko) * 2015-09-04 2017-03-15 삼성전자주식회사 에어 홀을 갖는 링 부재 및 그를 포함하는 기판 처리 장치
KR20190112188A (ko) * 2017-03-31 2019-10-02 맷슨 테크놀로지, 인크. 공정에서의 워크피스 상의 재료 증착 방지
KR20210009274A (ko) * 2019-07-16 2021-01-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치

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KR101624123B1 (ko) * 2008-10-31 2016-05-25 램 리써치 코포레이션 플라즈마 프로세싱 챔버의 하부 전극 어셈블리
JP2010278166A (ja) * 2009-05-27 2010-12-09 Tokyo Electron Ltd プラズマ処理用円環状部品、及びプラズマ処理装置
JP5227264B2 (ja) 2009-06-02 2013-07-03 東京エレクトロン株式会社 プラズマ処理装置，プラズマ処理方法，プログラム
JP5496568B2 (ja) * 2009-08-04 2014-05-21 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP2013149634A (ja) * 2010-05-11 2013-08-01 Sharp Corp ドライエッチング装置
JP2013149635A (ja) * 2010-05-11 2013-08-01 Sharp Corp ドライエッチング装置
JP5690596B2 (ja) * 2011-01-07 2015-03-25 東京エレクトロン株式会社 フォーカスリング及び該フォーカスリングを備える基板処理装置
JP2012169552A (ja) * 2011-02-16 2012-09-06 Tokyo Electron Ltd 冷却機構、処理室、処理室内部品及び冷却方法
JP5741124B2 (ja) * 2011-03-29 2015-07-01 東京エレクトロン株式会社 プラズマ処理装置
US9412579B2 (en) * 2012-04-26 2016-08-09 Applied Materials, Inc. Methods and apparatus for controlling substrate uniformity
JP6853038B2 (ja) * 2013-06-26 2021-03-31 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Ｉｃｐプラズマ処理チャンバ内における高収率・基板最端部欠陥低減のための単一リング設計
US10047457B2 (en) 2013-09-16 2018-08-14 Applied Materials, Inc. EPI pre-heat ring
JP5767373B2 (ja) * 2014-07-29 2015-08-19 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法並びにこれを実施するためのプログラムを記憶する記憶媒体
CN104715997A (zh) * 2015-03-30 2015-06-17 上海华力微电子有限公司 聚焦环及具有该聚焦环的等离子体处理装置
JP6570971B2 (ja) * 2015-05-27 2019-09-04 東京エレクトロン株式会社 プラズマ処理装置およびフォーカスリング
JP6607795B2 (ja) * 2016-01-25 2019-11-20 東京エレクトロン株式会社 基板処理装置
JP6698502B2 (ja) * 2016-11-21 2020-05-27 東京エレクトロン株式会社 載置台及びプラズマ処理装置
KR102581226B1 (ko) * 2016-12-23 2023-09-20 삼성전자주식회사 플라즈마 처리 장치
KR102063108B1 (ko) * 2017-10-30 2020-01-08 세메스 주식회사 기판 처리 장치 및 기판 처리 방법
JP7055040B2 (ja) * 2018-03-07 2022-04-15 東京エレクトロン株式会社 被処理体の載置装置及び処理装置
JP2021521326A (ja) * 2018-04-10 2021-08-26 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 高温アモルファスカーボン堆積の厚膜堆積中の自発的アークの解決
WO2019229873A1 (ja) * 2018-05-30 2019-12-05 東芝三菱電機産業システム株式会社 活性ガス生成装置
JP2019220497A (ja) * 2018-06-15 2019-12-26 東京エレクトロン株式会社 載置台及びプラズマ処理装置
US11094511B2 (en) * 2018-11-13 2021-08-17 Applied Materials, Inc. Processing chamber with substrate edge enhancement processing
JP7258562B2 (ja) * 2019-01-11 2023-04-17 東京エレクトロン株式会社 処理方法及びプラズマ処理装置
JP7278160B2 (ja) * 2019-07-01 2023-05-19 東京エレクトロン株式会社 エッチング方法及びプラズマ処理装置
KR102175990B1 (ko) * 2020-01-09 2020-11-09 하나머티리얼즈(주) 포커스링 및 그를 포함하는 플라즈마 장치
US20220051912A1 (en) * 2020-08-12 2022-02-17 Taiwan Semiconductor Manufacturing Company Limited Gas flow control during semiconductor fabrication
CN112839422B (zh) * 2020-12-15 2024-08-02 成都金创立科技有限责任公司 一种用于多极式等离子发生器的绝缘结构
JP7641878B2 (ja) * 2021-11-01 2025-03-07 東京エレクトロン株式会社 測定方法及び測定システム
WO2025249149A1 (ja) * 2024-05-27 2025-12-04 東京エレクトロン株式会社 載置台、およびプラズマ処理装置

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JP2001196357A (ja) * 2000-01-11 2001-07-19 Matsushita Electric Ind Co Ltd プラズマ処理装置
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KR20170029076A (ko) * 2015-09-04 2017-03-15 삼성전자주식회사 에어 홀을 갖는 링 부재 및 그를 포함하는 기판 처리 장치
KR20190112188A (ko) * 2017-03-31 2019-10-02 맷슨 테크놀로지, 인크. 공정에서의 워크피스 상의 재료 증착 방지
US11251026B2 (en) 2017-03-31 2022-02-15 Mattson Technology, Inc. Material deposition prevention on a workpiece in a process chamber
KR20210009274A (ko) * 2019-07-16 2021-01-26 도쿄엘렉트론가부시키가이샤 플라즈마 처리 방법 및 플라즈마 처리 장치

Also Published As

Publication number Publication date
CN101038849B (zh) 2010-05-26
KR100959706B1 (ko) 2010-05-25
TW200741860A (en) 2007-11-01
CN101807509A (zh) 2010-08-18
JP2007250967A (ja) 2007-09-27
CN101807509B (zh) 2012-07-25
CN101038849A (zh) 2007-09-19
TWI411034B (zh) 2013-10-01
KR20090026321A (ko) 2009-03-12

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