KR20070003976A - ＢｉＣＭＯＳ 프로세스에서 베이스 형성 방법 - Google Patents

ＢｉＣＭＯＳ 프로세스에서 베이스 형성 방법 Download PDF

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Publication number
KR20070003976A
KR20070003976A KR1020067019999A KR20067019999A KR20070003976A KR 20070003976 A KR20070003976 A KR 20070003976A KR 1020067019999 A KR1020067019999 A KR 1020067019999A KR 20067019999 A KR20067019999 A KR 20067019999A KR 20070003976 A KR20070003976 A KR 20070003976A
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KR
South Korea
Prior art keywords
base
over
forming
emitter
spacer
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Abandoned
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KR1020067019999A
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English (en)
Korean (ko)
Inventor
피터 제이. 게이스
앨빈 제이. 죠셉
쿠치 리우
브래들리 에이. 오르너
Original Assignee
인터내셔널 비지네스 머신즈 코포레이션
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Publication of KR20070003976A publication Critical patent/KR20070003976A/ko
Abandoned legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/133—Emitter regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H10D10/01—Manufacture or treatment
    • H10D10/051—Manufacture or treatment of vertical BJTs
    • H10D10/054—Forming extrinsic base regions on silicon substrate after insulating device isolation in vertical BJTs having single crystalline emitter, collector or base regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/177—Base regions of bipolar transistors, e.g. BJTs or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0107—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs
    • H10D84/0109—Integrating at least one component covered by H10D12/00 or H10D30/00 with at least one component covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating IGFETs with BJTs the at least one component covered by H10D12/00 or H10D30/00 being a MOS device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
    • H10D84/401—Combinations of FETs or IGBTs with BJTs

Landscapes

  • Bipolar Transistors (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Integrated Circuits (AREA)
KR1020067019999A 2004-04-14 2005-04-06 ＢｉＣＭＯＳ 프로세스에서 베이스 형성 방법 Abandoned KR20070003976A (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/709,113 2004-04-14
US10/709,113 US6911681B1 (en) 2004-04-14 2004-04-14 Method of base formation in a BiCMOS process

Related Child Applications (1)

Application Number Title Priority Date Filing Date
KR1020117007280A Division KR20110049896A (ko) 2004-04-14 2005-04-06 ＢｉＣＭＯＳ 프로세스에서 베이스 형성 방법

Publications (1)

Publication Number Publication Date
KR20070003976A true KR20070003976A (ko) 2007-01-05

Family

ID=34677064

Family Applications (2)

Application Number Title Priority Date Filing Date
KR1020067019999A Abandoned KR20070003976A (ko) 2004-04-14 2005-04-06 ＢｉＣＭＯＳ 프로세스에서 베이스 형성 방법
KR1020117007280A Ceased KR20110049896A (ko) 2004-04-14 2005-04-06 ＢｉＣＭＯＳ 프로세스에서 베이스 형성 방법

Family Applications After (1)

Application Number Title Priority Date Filing Date
KR1020117007280A Ceased KR20110049896A (ko) 2004-04-14 2005-04-06 ＢｉＣＭＯＳ 프로세스에서 베이스 형성 방법

Country Status (7)

Country Link
US (2) US6911681B1 (enExample)
EP (1) EP1754253A4 (enExample)
JP (1) JP5182797B2 (enExample)
KR (2) KR20070003976A (enExample)
CN (1) CN101076896B (enExample)
TW (1) TWI343605B (enExample)
WO (1) WO2005104680A2 (enExample)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6911681B1 (en) 2004-04-14 2005-06-28 International Business Machines Corporation Method of base formation in a BiCMOS process
US7709338B2 (en) * 2006-12-21 2010-05-04 International Business Machines Corporation BiCMOS devices with a self-aligned emitter and methods of fabricating such BiCMOS devices
DE102008010323A1 (de) * 2008-02-21 2009-09-10 Texas Instruments Deutschland Gmbh Verfahren zur Herstellung einer elektronischen Vorrichtung, die einen bipolaren PNP-Transistor umfasst
US20090250785A1 (en) * 2008-04-02 2009-10-08 Thomas Joseph Krutsick Methods of forming a shallow base region of a bipolar transistor
US8853796B2 (en) * 2011-05-19 2014-10-07 GLOBALFOUNDIERS Singapore Pte. Ltd. High-K metal gate device
US20120313146A1 (en) 2011-06-08 2012-12-13 International Business Machines Corporation Transistor and method of forming the transistor so as to have reduced base resistance
US8546230B2 (en) 2011-11-15 2013-10-01 International Business Machines Corporation Bipolar transistor with a collector having a protected outer edge portion for reduced based-collector junction capacitance and a method of forming the transistor
US8603883B2 (en) 2011-11-16 2013-12-10 International Business Machines Corporation Interface control in a bipolar junction transistor
US20130277804A1 (en) * 2012-04-20 2013-10-24 International Business Machines Corporation Bipolar junction transistors with reduced base-collector junction capacitance
US9887278B2 (en) 2015-09-28 2018-02-06 International Business Machines Corporation Semiconductor-on-insulator lateral heterojunction bipolar transistor having epitaxially grown intrinsic base and deposited extrinsic base
US11508354B2 (en) * 2020-05-04 2022-11-22 Rovi Guides, Inc. Method and apparatus for correcting failures in automated speech recognition systems
US11855196B2 (en) * 2021-10-25 2023-12-26 Globalfoundries Singapore Pte. Ltd. Transistor with wrap-around extrinsic base

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US4682409A (en) * 1985-06-21 1987-07-28 Advanced Micro Devices, Inc. Fast bipolar transistor for integrated circuit structure and method for forming same
US4808548A (en) 1985-09-18 1989-02-28 Advanced Micro Devices, Inc. Method of making bipolar and MOS devices on same integrated circuit substrate
DE3886062T2 (de) * 1987-01-30 1994-05-19 Texas Instruments Inc Verfahren zum Herstellen integrierter Strukturen aus bipolaren und CMOS-Transistoren.
US5144403A (en) 1989-02-07 1992-09-01 Hewlett-Packard Company Bipolar transistor with trench-isolated emitter
JP2746289B2 (ja) * 1989-09-09 1998-05-06 忠弘 大見 素子の作製方法並びに半導体素子およびその作製方法
US5017990A (en) 1989-12-01 1991-05-21 International Business Machines Corporation Raised base bipolar transistor structure and its method of fabrication
US5107321A (en) 1990-04-02 1992-04-21 National Semiconductor Corporation Interconnect method for semiconductor devices
EP0452720A3 (en) 1990-04-02 1994-10-26 Nat Semiconductor Corp A semiconductor structure and method of its manufacture
US5106767A (en) 1990-12-07 1992-04-21 International Business Machines Corporation Process for fabricating low capacitance bipolar junction transistor
JP3152959B2 (ja) 1991-07-12 2001-04-03 富士通株式会社 半導体装置及びその製造方法
JPH05182980A (ja) * 1992-01-07 1993-07-23 Toshiba Corp ヘテロ接合バイポーラトランジスタ
JPH05275437A (ja) * 1992-03-24 1993-10-22 Fujitsu Ltd 半導体装置及びその製造方法
JP2630237B2 (ja) 1993-12-22 1997-07-16 日本電気株式会社 半導体装置及びその製造方法
US5455189A (en) 1994-02-28 1995-10-03 National Semiconductor Corporation Method of forming BICMOS structures
US5439833A (en) 1994-03-15 1995-08-08 National Semiconductor Corp. Method of making truly complementary and self-aligned bipolar and CMOS transistor structures with minimized base and gate resistances and parasitic capacitance
JPH07335773A (ja) 1994-06-10 1995-12-22 Hitachi Ltd 半導体集積回路装置の製造方法
DE69427913T2 (de) 1994-10-28 2002-04-04 Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno, Catania Bipolarer Hochfrequenztransistor und Verfahren zur Herstellung
US5541121A (en) 1995-01-30 1996-07-30 Texas Instruments Incorporated Reduced resistance base contact method for single polysilicon bipolar transistors using extrinsic base diffusion from a diffusion source dielectric layer
EP0766295A1 (en) 1995-09-29 1997-04-02 Co.Ri.M.Me. Consorzio Per La Ricerca Sulla Microelettronica Nel Mezzogiorno Process for forming a high frequency bipolar transistor structure comprising an oblique implantation step
KR100205024B1 (ko) * 1995-12-20 1999-07-01 양승택 초 자기 정렬 바이폴러 트랜지스터의 제조방법
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WO1999052138A1 (en) * 1998-04-08 1999-10-14 Aeroflex Utmc Microelectronic Systems Inc. A bipolar transistor having low extrinsic base resistance
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JP2001035858A (ja) * 1999-07-21 2001-02-09 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
JP2001085441A (ja) * 1999-09-13 2001-03-30 Oki Electric Ind Co Ltd バイポーラトランジスタ
FR2804247B1 (fr) 2000-01-21 2002-04-12 St Microelectronics Sa Procede de realisation d'un transistor bipolaire a emetteur et base extrinseque auto-alignes
FR2805923B1 (fr) * 2000-03-06 2002-05-24 St Microelectronics Sa Procede de fabrication d'un transistor bipolaire double- polysilicium auto-aligne
JP2001319936A (ja) * 2000-05-12 2001-11-16 Matsushita Electric Ind Co Ltd バイポーラトランジスタ及びその製造方法
JP2002334889A (ja) * 2001-05-10 2002-11-22 Matsushita Electric Ind Co Ltd 半導体装置およびその製造方法
US6492238B1 (en) 2001-06-22 2002-12-10 International Business Machines Corporation Bipolar transistor with raised extrinsic base fabricated in an integrated BiCMOS circuit
US6911681B1 (en) 2004-04-14 2005-06-28 International Business Machines Corporation Method of base formation in a BiCMOS process

Also Published As

Publication number Publication date
US7625792B2 (en) 2009-12-01
CN101076896A (zh) 2007-11-21
US20070207567A1 (en) 2007-09-06
WO2005104680A2 (en) 2005-11-10
EP1754253A2 (en) 2007-02-21
CN101076896B (zh) 2011-07-13
US6911681B1 (en) 2005-06-28
JP2007536724A (ja) 2007-12-13
KR20110049896A (ko) 2011-05-12
TWI343605B (en) 2011-06-11
EP1754253A4 (en) 2008-10-22
TW200534401A (en) 2005-10-16
WO2005104680A3 (en) 2007-07-05
JP5182797B2 (ja) 2013-04-17

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