KR20060133914A - 반도체 장치 및 그 제조 방법 - Google Patents
반도체 장치 및 그 제조 방법 Download PDFInfo
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- KR20060133914A KR20060133914A KR1020060055428A KR20060055428A KR20060133914A KR 20060133914 A KR20060133914 A KR 20060133914A KR 1020060055428 A KR1020060055428 A KR 1020060055428A KR 20060055428 A KR20060055428 A KR 20060055428A KR 20060133914 A KR20060133914 A KR 20060133914A
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- silicide
- silicon
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 47
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 143
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 143
- 239000010703 silicon Substances 0.000 claims abstract description 143
- 229910021332 silicide Inorganic materials 0.000 claims abstract description 69
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims abstract description 64
- 229910052751 metal Inorganic materials 0.000 claims abstract description 59
- 239000002184 metal Substances 0.000 claims abstract description 59
- 150000004767 nitrides Chemical class 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 39
- 239000012535 impurity Substances 0.000 claims description 38
- 238000000034 method Methods 0.000 claims description 29
- 239000002245 particle Substances 0.000 claims description 16
- 238000000137 annealing Methods 0.000 claims description 13
- 238000005229 chemical vapour deposition Methods 0.000 claims description 11
- 239000010937 tungsten Substances 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 8
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical group [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 229910052796 boron Inorganic materials 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 239000003870 refractory metal Substances 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- 239000010941 cobalt Substances 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 238000009751 slip forming Methods 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 8
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 29
- 229920005591 polysilicon Polymers 0.000 description 28
- 238000006243 chemical reaction Methods 0.000 description 11
- -1 tungsten nitride Chemical class 0.000 description 8
- 230000009977 dual effect Effects 0.000 description 6
- 238000002955 isolation Methods 0.000 description 5
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 5
- 229910021342 tungsten silicide Inorganic materials 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910008807 WSiN Inorganic materials 0.000 description 4
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- MROCJMGDEKINLD-UHFFFAOYSA-N dichlorosilane Chemical compound Cl[SiH2]Cl MROCJMGDEKINLD-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000007872 degassing Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000004151 rapid thermal annealing Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- WNUPENMBHHEARK-UHFFFAOYSA-N silicon tungsten Chemical compound [Si].[W] WNUPENMBHHEARK-UHFFFAOYSA-N 0.000 description 1
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 1
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- H01—ELECTRIC ELEMENTS
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823835—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes silicided or salicided gate conductors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
- H01L21/28044—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer
- H01L21/28061—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities the conductor comprising at least another non-silicon conductive layer the conductor comprising a metal or metal silicide formed by deposition, e.g. sputter deposition, i.e. without a silicidation reaction
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
- H01L21/823842—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different gate conductor materials or different gate conductor implants, e.g. dual gate structures
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4916—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen
- H01L29/4925—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement
- H01L29/4933—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET the conductor material next to the insulator being a silicon layer, e.g. polysilicon doped with boron, phosphorus or nitrogen with a multiple layer structure, e.g. several silicon layers with different crystal structure or grain arrangement with a silicide layer contacting the silicon layer, e.g. Polycide gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
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Abstract
Description
Claims (15)
- N-채널 트랜지스터 형성 영역 및 P-채널 트랜지스터 형성 영역을 가지는 반도체 기판;상기 반도체 기판의 상기 N-채널 트랜지스터 형성 영역에 제공된 제1 게이트 전극; 및상기 반도체 기판의 상기 P-채널 트랜지스터 형성 영역에 제공된 제2 게이트 전극을 포함하고,상기 제1 게이트 전극은 N-형 불순물을 함유하는 N-형 실리콘층, 상기 N-형 실리콘층 위에 형성된 제1 실리사이드층, 상기 제1 실리사이드층 위에 형성된 제1 실리콘막, 상기 제1 실리콘막 위에 형성된 제1 금속 질화물층, 및 상기 제1 금속 질화물층 위에 형성된 제1 금속층을 포함하고,상기 제2 게이트 전극은 P-형 불순물을 함유하는 P-형 실리콘층, 상기 P-형 실리콘층 위에 형성되고, 또한 상기 반도체 기판의 표면과 대체로 평행한 방향으로 비연속적으로 배치되는 복수의 실리사이드 입자(grain)를 가지는 제2 실리사이드층, 상기 제2 실리사이드층의 상기 비연속적인 부분에 대하여 노출된 상기 P-형 실리콘층의 표면 및 상기 제2 실리사이드층의 표면 위에 연속적으로 형성된 제2 실리콘막, 상기 제2 실리콘막 위에 형성된 제2 금속 질화물층, 및 상기 제2 금속 질화물층 위에 형성된 제2 금속층을 포함하는 반도체 장치.
- 제1항에 있어서,상기 제1 실리콘막 및 상기 제2 실리콘막은 도핑되어 있지 않은 것인 반도체 장치.
- 제1항에 있어서,상기 실리사이드층, 상기 금속 질화물층 및 상기 금속층은 동일한 내화 금속(refractory metal)을 함유하고 있는 반도체 장치.
- 제3항에 있어서,상기 내화 금속은 텅스텐(W), 코발트(Co), 티타늄(Ti), 니켈(Ni) 및 탄탈(Ta) 중 어느 하나인 반도체 장치.
- 제1항 내지 제4항 중 어느 한 항에 있어서,상기 P-형 불순물은 붕소(B)인 반도체 장치.
- 반도체 장치 제조 방법으로서,반도체 기판의 N-채널 트랜지스터 형성 영역 위에 N-형 불순물을 함유하는 N-형 실리콘층을 형성하고, 상기 반도체 기판의 P-채널 트랜지스터 형성 영역 위에 P-형 불순물을 함유하는 P-형 실리콘층을 형성하는 제1 단계;상기 N-형 실리콘층 위에 제1 실리사이드층을 형성하고, 상기 P-형 실리콘층 위에 상기 반도체 기판의 표면과 대체로 평행한 방향으로 비연속적으로 배치된 복수의 실리사이드 입자들을 가지는 제2 실리사이드층을 형성하는 제2 단계;상기 제1 실리사이드층과, 상기 제2 실리사이드층의 상기 비연속적인 부분에 대하여 노출된 상기 P-형 실리콘층의 표면과, 상기 제2 실리사이드층의 표면 위에 연속적인 실리콘막을 형성하는 제3 단계;상기 실리콘막 위에 금속 질화물층을 형성하는 제4 단계;상기 금속 질화물층 위에 금속층을 형성하는 제5 단계; 및상기 금속층, 상기 금속 질화물층, 상기 실리콘막, 상기 제1 실리사이드층, 상기 제2 실리사이드층, 상기 N-형 실리콘층 및 상기 P-형 실리콘층을 패터닝(patterning)하여, 각각, 상기 N-채널 트랜지스터 형성 영역에 상기 N-형 실리콘층을 포함하는 제1 게이트 전극을 형성하고, 상기 P-채널 트랜지스터 형성 영역에 상기 P-형 실리콘층을 포함하는 제2 게이트 전극을 형성하는 제6 단계를 포함하는 반도체 장치 제조 방법.
- 제6항에 있어서,상기 실리콘막은 도핑되어 있지 않은 것인 반도체 장치 제조 방법.
- 제6항에 있어서,상기 제3 단계에서 형성되는 상기 실리콘막의 막 두께는 0.3nm 내지 1.5nm인 반도체 장치 제조 방법.
- 제6항에 있어서,상기 실리콘막은 CVD법에 의해, 50Pa 내지 300Pa의 압력하에서 퇴적되는 반도체 장치 제조 방법.
- 제9항에 있어서,상기 실리콘막의 상기 퇴적은 5초 내지 120초 동안 수행되는 반도체 장치 제조 방법.
- 제6항에 있어서,상기 제4 단계 이전에, 상기 제3 단계에서 상기 제1 실리사이드층 및 제2 실리사이드층에 남아있는 가스를 제거하기 위해 열 어닐링(thermal annealing)을 수행하는 반도체 장치 제조 방법.
- 제11항에 있어서,상기 열 어닐링에 의해, 적어도 상기 실리콘막의 상기 제1 실리사이드층과 상기 제2 실리사이드층 사이의 계면(interface)이 규화(silicify)되는 반도체 장치 제조 방법.
- 제6항에 있어서,상기 제1 실리사이드층, 상기 제2 실리사이드층, 상기 금속 질화물층 및 상기 금속층은 동일한 내화 금속을 함유하고 있는 반도체 장치 제조 방법.
- 제13항에 있어서,상기 내화 금속은 텅스텐(W), 코발트(Co), 티타늄(Ti), 니켈(Ni) 및 탄탈(Ta) 중 어느 하나인 반도체 장치 제조 방법.
- 제6항 내지 제14항 중 어느 한 항에 있어서,상기 P-형 불순물은 붕소(B)인 반도체 장치 제조 방법.
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US7390754B2 (en) * | 2006-07-20 | 2008-06-24 | United Microelectronics Corp. | Method of forming a silicide |
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US4389257A (en) * | 1981-07-30 | 1983-06-21 | International Business Machines Corporation | Fabrication method for high conductivity, void-free polysilicon-silicide integrated circuit electrodes |
JPH06112477A (ja) * | 1992-09-28 | 1994-04-22 | Toshiba Corp | 半導体装置およびその製造方法 |
US6187656B1 (en) | 1997-10-07 | 2001-02-13 | Texas Instruments Incorporated | CVD-based process for manufacturing stable low-resistivity poly-metal gate electrodes |
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US7919405B2 (en) | 2011-04-05 |
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US20060284264A1 (en) | 2006-12-21 |
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