KR20060118002A - 중합체 화합물, 상기 중합체 화합물을 함유하는포토레지스트 조성물 및 레지스트 패턴 형성 방법 - Google Patents
중합체 화합물, 상기 중합체 화합물을 함유하는포토레지스트 조성물 및 레지스트 패턴 형성 방법 Download PDFInfo
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- KR20060118002A KR20060118002A KR1020067017557A KR20067017557A KR20060118002A KR 20060118002 A KR20060118002 A KR 20060118002A KR 1020067017557 A KR1020067017557 A KR 1020067017557A KR 20067017557 A KR20067017557 A KR 20067017557A KR 20060118002 A KR20060118002 A KR 20060118002A
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- BIAAQBNMRITRDV-UHFFFAOYSA-N COCCOCCl Chemical compound COCCOCCl BIAAQBNMRITRDV-UHFFFAOYSA-N 0.000 description 1
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/02—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes
- C08G61/04—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms
- C08G61/06—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds
- C08G61/08—Macromolecular compounds containing only carbon atoms in the main chain of the macromolecule, e.g. polyxylylenes only aliphatic carbon atoms prepared by ring-opening of carbocyclic compounds of carbocyclic compounds containing one or more carbon-to-carbon double bonds in the ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
- G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
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- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Materials For Photolithography (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Other Resins Obtained By Reactions Not Involving Carbon-To-Carbon Unsaturated Bonds (AREA)
Abstract
Description
분자량 (Mw) | 분산도 (Mw/Mn) | 조성비 (x/y) | |
수지 1 | 8,500 | - | - |
수지 2 | 10,900 | - | - |
수지 3 | 9,000 | 1.67 | 0.8/0.2 |
수지 4 | 8,890 | 1.69 | 0.89/0.11 |
수지 5 | 9,440 | 1.71 | 0.96/0.04 |
수지 6 | 15,000 | 2.0 | 0.9/0.1 |
Claims (6)
- 제 1 항에 있어서, 상기 알칼리 가용성기 (i) 가, 알코올계 히드록실기, 폐놀계 히드록실기 또는 카르복실기로부터 선택되는 하나 이상인 중합체 화합물.
- 제 2 항에 있어서, 상기 알코올계 히드록실기에 결합하고 있는 탄소 원자에 인접하는 탄소 원자가 하나 이상의 플루오르 원자에 결합되는 중합체 화합물.
- 제 1 항에 있어서, 상기 친수성기가 카르보닐기, 에스테르기, 알코올계 히드록실기, 에테르, 이미노기 또는 아미노기로부터 선택되는 하나 이상인 중합체 화합 물.
- 산의 작용에 의해 알칼리 용해성이 변화하는 기재 수지 성분 (A); 및방사선에 대한 노광에 의해 산을 발생시키는 산발생제 (B) 를 함유하는 포토레지스트 조성물로서, 상기 기재 수지 성분 (A) 가 제 1 항 내지 제 4 항 중 어느 한 항에 따른 중합체 화합물인 포토레지스트 조성물.
- 하기의 단계를 포함하는 레지스트 패턴 형성 방법:제 5 항에 따른 포토레지스트 조성물을 이용하여 기판 상에 포토레지스트 필름을 형성하는 단계;상기 포토레지스트 필름을 노광하는 단계; 및상기 노광된 포토레지스트 필름을 현상함으로써 레지스트 패턴을 형성하는 단계.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004045521A JP2005232388A (ja) | 2004-02-20 | 2004-02-20 | 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法 |
JPJP-P-2004-00045521 | 2004-02-20 |
Publications (2)
Publication Number | Publication Date |
---|---|
KR20060118002A true KR20060118002A (ko) | 2006-11-17 |
KR100801047B1 KR100801047B1 (ko) | 2008-02-04 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1020067017557A KR100801047B1 (ko) | 2004-02-20 | 2005-01-20 | 중합체 화합물, 상기 중합체 화합물을 함유하는포토레지스트 조성물 및 레지스트 패턴 형성 방법 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7807328B2 (ko) |
JP (1) | JP2005232388A (ko) |
KR (1) | KR100801047B1 (ko) |
TW (1) | TWI277631B (ko) |
WO (1) | WO2005080474A1 (ko) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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US9241891B2 (en) | 2012-10-30 | 2016-01-26 | The Procter & Gamble Company | Personal care compositions comprising self-assembling peptides |
TWI745445B (zh) * | 2016-10-05 | 2021-11-11 | 日商東京應化工業股份有限公司 | 光阻組成物及光阻圖型形成方法、高分子化合物,及共聚物 |
Family Cites Families (17)
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US6291130B1 (en) * | 1998-07-27 | 2001-09-18 | Fuji Photo Film Co., Ltd. | Positive photosensitive composition |
US6790587B1 (en) * | 1999-05-04 | 2004-09-14 | E. I. Du Pont De Nemours And Company | Fluorinated polymers, photoresists and processes for microlithography |
US6596458B1 (en) * | 1999-05-07 | 2003-07-22 | Fuji Photo Film Co., Ltd. | Positive-working photoresist composition |
JP2001022072A (ja) * | 1999-07-07 | 2001-01-26 | Fuji Photo Film Co Ltd | 遠紫外線露光用ポジ型フォトレジスト組成物 |
US6984482B2 (en) * | 1999-06-03 | 2006-01-10 | Hynix Semiconductor Inc. | Top-coating composition for photoresist and process for forming fine pattern using the same |
JP3988517B2 (ja) * | 2001-04-27 | 2007-10-10 | Jsr株式会社 | 感放射線性樹脂組成物 |
US6686429B2 (en) * | 2001-05-11 | 2004-02-03 | Clariant Finance (Bvi) Limited | Polymer suitable for photoresist compositions |
JP4300774B2 (ja) * | 2001-09-28 | 2009-07-22 | 住友化学株式会社 | ポジ型レジスト組成物 |
KR20030051194A (ko) * | 2001-09-28 | 2003-06-25 | 스미또모 가가꾸 고교 가부시끼가이샤 | 포지티브 내식막 조성물 |
JP2003295443A (ja) * | 2002-04-08 | 2003-10-15 | Sumitomo Chem Co Ltd | レジスト組成物 |
JP2003322970A (ja) * | 2002-04-26 | 2003-11-14 | Tokyo Ohka Kogyo Co Ltd | ポジ型レジスト組成物及びそれを用いたパターン形成方法 |
US7198880B2 (en) * | 2002-04-26 | 2007-04-03 | Fujifilm Corporation | Positive resist composition |
US7217492B2 (en) * | 2002-12-25 | 2007-05-15 | Jsr Corporation | Onium salt compound and radiation-sensitive resin composition |
JP4386710B2 (ja) * | 2003-04-28 | 2009-12-16 | 東京応化工業株式会社 | ホトレジスト組成物、該ホトレジスト組成物用低分子化合物および高分子化合物 |
TW200503988A (en) * | 2003-06-09 | 2005-02-01 | Idemitsu Petrochemical Co | Adamantyl vinyl ether compound and production process for the same |
JP4533639B2 (ja) * | 2003-07-22 | 2010-09-01 | 富士フイルム株式会社 | 感刺激性組成物、化合物及び該感刺激性組成物を用いたパターン形成方法 |
JP4499591B2 (ja) * | 2005-03-23 | 2010-07-07 | 東京応化工業株式会社 | 厚膜形成用化学増幅型ポジ型ホトレジスト組成物 |
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- 2004-02-20 JP JP2004045521A patent/JP2005232388A/ja active Pending
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2005
- 2005-01-20 WO PCT/JP2005/000660 patent/WO2005080474A1/ja active Application Filing
- 2005-01-20 KR KR1020067017557A patent/KR100801047B1/ko active IP Right Grant
- 2005-01-20 US US10/588,866 patent/US7807328B2/en active Active
- 2005-02-03 TW TW094103465A patent/TWI277631B/zh active
Also Published As
Publication number | Publication date |
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WO2005080474A1 (ja) | 2005-09-01 |
TW200540203A (en) | 2005-12-16 |
KR100801047B1 (ko) | 2008-02-04 |
US7807328B2 (en) | 2010-10-05 |
JP2005232388A (ja) | 2005-09-02 |
US20070172757A1 (en) | 2007-07-26 |
TWI277631B (en) | 2007-04-01 |
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